JP7241027B2 - レーザ生成プラズマ源 - Google Patents
レーザ生成プラズマ源 Download PDFInfo
- Publication number
- JP7241027B2 JP7241027B2 JP2019558698A JP2019558698A JP7241027B2 JP 7241027 B2 JP7241027 B2 JP 7241027B2 JP 2019558698 A JP2019558698 A JP 2019558698A JP 2019558698 A JP2019558698 A JP 2019558698A JP 7241027 B2 JP7241027 B2 JP 7241027B2
- Authority
- JP
- Japan
- Prior art keywords
- pulse
- radiation
- seed laser
- polarizer
- laser module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 230000005855 radiation Effects 0.000 claims description 67
- 239000013078 crystal Substances 0.000 claims description 45
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 26
- 239000013077 target material Substances 0.000 claims description 20
- 230000036278 prepulse Effects 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 description 25
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- 238000010586 diagram Methods 0.000 description 11
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- 230000010287 polarization Effects 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000007493 shaping process Methods 0.000 description 5
- 101100456571 Mus musculus Med12 gene Proteins 0.000 description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 229910021623 Tin(IV) bromide Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 238000013459 approach Methods 0.000 description 2
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- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- -1 SnBr 4 Chemical class 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 229910000083 tin tetrahydride Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2316—Cascaded amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0064—Anti-reflection devices, e.g. optical isolaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0071—Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- X-Ray Techniques (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17170322 | 2017-05-10 | ||
EP17170322.6 | 2017-05-10 | ||
PCT/EP2018/059775 WO2018206244A1 (fr) | 2017-05-10 | 2018-04-17 | Source de plasma produit par laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020519934A JP2020519934A (ja) | 2020-07-02 |
JP7241027B2 true JP7241027B2 (ja) | 2023-03-16 |
Family
ID=58699051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019558698A Active JP7241027B2 (ja) | 2017-05-10 | 2018-04-17 | レーザ生成プラズマ源 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7241027B2 (fr) |
CN (1) | CN110612482B (fr) |
NL (1) | NL2020778A (fr) |
WO (1) | WO2018206244A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2024009A (en) * | 2018-10-18 | 2020-05-07 | Asml Netherlands Bv | Control of optical modulator |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011516913A (ja) | 2008-03-31 | 2011-05-26 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | 複数のビームを結合し、繰り返し率と平均パワーが高い偏光レーザビームを形成する方法 |
JP2013093308A (ja) | 2011-10-05 | 2013-05-16 | Gigaphoton Inc | 極端紫外光生成装置および極端紫外光生成方法 |
JP2015531544A (ja) | 2012-09-07 | 2015-11-02 | エーエスエムエル ネザーランズ ビー.ブイ. | シードレーザモード安定化のためのシステムおよび方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2003192A1 (nl) * | 2008-07-30 | 2010-02-02 | Asml Netherlands Bv | Alignment of collector device in lithographic apparatus. |
NL2004837A (en) * | 2009-07-09 | 2011-01-10 | Asml Netherlands Bv | Radiation system and lithographic apparatus. |
JP2013229553A (ja) * | 2012-03-30 | 2013-11-07 | Gigaphoton Inc | レーザ装置及び極端紫外光生成装置 |
US9357625B2 (en) * | 2014-07-07 | 2016-05-31 | Asml Netherlands B.V. | Extreme ultraviolet light source |
US9625824B2 (en) * | 2015-04-30 | 2017-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd | Extreme ultraviolet lithography collector contamination reduction |
-
2018
- 2018-04-17 CN CN201880030698.8A patent/CN110612482B/zh active Active
- 2018-04-17 JP JP2019558698A patent/JP7241027B2/ja active Active
- 2018-04-17 WO PCT/EP2018/059775 patent/WO2018206244A1/fr active Application Filing
- 2018-04-17 NL NL2020778A patent/NL2020778A/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011516913A (ja) | 2008-03-31 | 2011-05-26 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | 複数のビームを結合し、繰り返し率と平均パワーが高い偏光レーザビームを形成する方法 |
JP2013093308A (ja) | 2011-10-05 | 2013-05-16 | Gigaphoton Inc | 極端紫外光生成装置および極端紫外光生成方法 |
JP2015531544A (ja) | 2012-09-07 | 2015-11-02 | エーエスエムエル ネザーランズ ビー.ブイ. | シードレーザモード安定化のためのシステムおよび方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2018206244A1 (fr) | 2018-11-15 |
JP2020519934A (ja) | 2020-07-02 |
CN110612482A (zh) | 2019-12-24 |
CN110612482B (zh) | 2022-04-26 |
NL2020778A (en) | 2018-11-14 |
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