JP7240541B2 - semiconductor equipment - Google Patents

Description

The present invention relates to a semiconductor device such as a power module.

A power module is a device in which a pair of switching elements are connected in series to a power supply and an output is obtained between the pair of switching elements. Such a power module is used, for example, in an inverter circuit forming a drive circuit for driving an electric motor. Electric motors are used, for example, as power sources for electric vehicles (including hybrid vehicles), electric trains, industrial robots, and the like. Power modules are also applied to inverter circuits that convert the power generated by solar cells, wind power generators, and other power generators (especially in-house power generators) to match the power of the commercial power supply.

Devices using Si (silicon) semiconductors have conventionally been used as switching elements of power modules. However, loss in devices during power conversion has become a problem, and devices using Si materials have reached a point where it is already difficult to achieve even higher efficiency.
Therefore, a power module using a power device using a SiC (silicon carbide) semiconductor as a switching element has been proposed. Since SiC power devices have a high switching speed, high-speed on/off operations are possible. Therefore, the switching loss can be reduced because the current quickly decreases when the device is turned off.

JP-A-2003-133515 JP-A-2004-95769

However, high-speed switching by SiC power devices poses a new problem of increased surge voltage during switching.
As shown in the following equation (A), the surge voltage V is the product of the self-inductance L of the wiring inside the power module and the derivative of the current i with respect to time t (di/dt) (current change rate per time). Given.

V=L・(di/dt) ……(A)
As the switching speed increases, the rate of change (di/dt) of the current i increases, so the surge voltage V increases. If the device is loaded with a voltage higher than the withstand voltage due to this surge voltage, the device may be destroyed. Also, if the surge voltage is large, there is concern that EMI (electromagnetic interference) noise will increase and reliability will decrease.

Therefore, in order to reduce the surge voltage while applying high-speed switching elements such as SiC devices, it is necessary to reduce the self-inductance L of the internal wiring of the power module. This problem is common not only to power modules but also to semiconductor devices having switching elements. Of course, reduction of surge voltage is also an important issue for semiconductor devices having switching elements using Si semiconductors.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device capable of realizing a power module having a novel configuration.

In one embodiment of the present invention, a first power terminal and a second power terminal are arranged adjacent to each other in a predetermined direction in a plan view, and an electric current is provided between the first power terminal and the second power terminal. the first power supply terminal includes a first internal wiring connection portion and a first external wiring connection portion; a first connecting portion for connecting edges on the second power terminal side, wherein the second power terminal is connected to the second internal wiring connecting portion and the second external wiring connecting portion; and the second internal wiring connecting portion. a second connecting portion connected to the second external wiring connecting portion and arranged adjacent to the first connecting portion, wherein the first connecting portion and the second connecting portion are embedded in the terminal block, respectively; and a space between a portion of the first connecting portion embedded in the terminal block and a portion of the second connecting portion embedded in the terminal block is the first A semiconductor device is provided in which the distance between the external wiring connection portion and the second external wiring connection portion is smaller than the minimum distance.

In one embodiment of the invention, the circuit element has first and second switching elements connected in cascade, and the output is taken from the junction of the first and second switching elements.
In one embodiment of the present invention, the first internal wiring connection portion and the first external wiring connection portion are arranged to face each other with a predetermined space therebetween, and the second internal wiring connection portion and the second external wiring connection portion are arranged to face each other. The wiring connection portions are arranged to face each other with a predetermined interval.

In one embodiment of the invention, the first internal wiring connection portion, the second internal wiring connection portion and the circuit element are sealed within a case.
In one embodiment of the invention, the first and second switching elements each include diodes connected in parallel in opposite directions.
In one embodiment of the invention, said first and second switching elements are composed of SiC MOSFETs or IGBTs.

In one embodiment of the present invention, the first connecting portion and the second connecting portion have opposing portions that extend in the vertical direction and are opposed to each other with a predetermined space therebetween. and ramps extending to gradually increasing spacing.
In one embodiment of the invention, the distance between the facing portion of the first connecting portion and the facing portion of the second connecting portion is 2 mm or less.
In one embodiment of the present invention, the first connecting portion and the second connecting portion each include opposing portions that extend in the vertical direction and face each other with a predetermined space therebetween, and the The distance between the facing portion and the facing portion of the second connecting portion is smaller than the minimum distance between the output terminal to which the output is connected and the first power terminal or the second power terminal.

An embodiment of the present invention includes a circuit board on which the circuit element is mounted, the circuit board being substantially rectangular in plan view, the internal wiring connection portion of the first power terminal and the internal wiring connection portion of the second power terminal. The internal wiring connection portion is attached to the longitudinal end portion of the circuit board.
In one embodiment of the present invention, the first switching element has a plurality of switching elements connected in parallel, and the second switching element has a plurality of switching elements connected in parallel.

In one embodiment of the present invention, a convex portion is formed in a region between the first external wiring connection portion and the first external wiring connection portion on the surface of the terminal block.
In one embodiment of the invention, a plurality of grooves are formed on the surface of the protrusion.

In one embodiment of the present invention, the projection and the groove are in a direction orthogonal to the direction in which the facing portion of the first connecting portion and the facing portion of the second connecting portion face each other, It extends along the surface of the terminal block.
In one embodiment of the present invention, the lengths of the protrusions and the grooves are longer than the lengths in the direction in which the protrusions and the grooves extend in the facing portions of the first connecting portion and the second connecting portion. big.

FIG. 1 is an illustrative plan view showing the internal structure of a power module according to one embodiment of the invention. 2 is a right side view of FIG. 1. FIG. 3 is a rear view of FIG. 1. FIG. FIG. 4 is a schematic cross-sectional view along line IV--IV in FIG. 5 is a schematic cross-sectional view along line VV of FIG. 1. FIG. 6 is a schematic enlarged cross-sectional view taken along line VI-VI of FIG. 1. FIG. FIG. 7 is an illustrative perspective view for explaining the configuration of the power module circuit housed in the case. 8 is a schematic enlarged sectional view along line VIII-VIII of FIG. 7. FIG. FIG. 9 is an explanatory diagram illustrating how the back surface of the heat sink is ground to reduce the thickness of the heat sink. FIG. 10 is an electrical circuit diagram for explaining the electrical configuration of the power module. FIG. 11 is an electric circuit diagram showing an electric circuit when the power module is used in an H-bridge circuit. FIG. 12 shows, as a thermal resistance ratio, the ratio of the thermal resistance of the power module when the flat connecting metal members are used to the thermal resistance of the power module when wires are used instead of the flat connecting metal members. is a graph. FIG. 13 is a graph showing, as a thermal resistance ratio, the ratio of the thermal resistance of the power module when the back surface of the heat sink is ground to the thermal resistance of the power module when the back surface of the heat sink is not ground. FIG. 14 shows the thermal resistance of the power module when the thickness of the solder layer for joining the switching element to the conductor layer is the reference value, and the thermal resistance of the power module when the thickness of the solder layer is thinner than the reference value. It is a graph which shows the ratio of thermal resistance as a thermal resistance ratio.

BEST MODE FOR CARRYING OUT THE INVENTION Below, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic plan view showing the internal structure of a power module according to one embodiment of the present invention, with the top plate removed. 2 is a right side view of FIG. 1. FIG. 3 is a rear view of FIG. 1. FIG. FIG. 4 is a schematic cross-sectional view along line IV--IV in FIG. 5 is a schematic cross-sectional view along line VV of FIG. 1. FIG. 6 is a schematic enlarged cross-sectional view taken along line VI-VI of FIG. 1. FIG. FIG. 7 is an illustrative perspective view for explaining the configuration of the power module circuit housed in the case. 8 is a schematic enlarged sectional view along line VIII-VIII of FIG. 7. FIG. 69, 70; 99, 100; 109, 110 are shown only partially (only one pair of each) in FIG. 7 for clarity.

A power module 1 includes a heat sink 2 , a case 3 , and a plurality of terminals attached to the case 3 . The plurality of terminals includes a first power terminal (positive power terminal in this example) P, a second power terminal (negative power terminal in this example) N, a first output terminal OUT1, and a second output terminal OUT2. contains. Furthermore, the plurality of terminals includes a drain sense terminal DS, a first source sense terminal SS1, a first gate terminal G1, first and second thermistor terminals T1 and T2, a second source sense terminal SS2, and a second and a gate terminal G2. When collectively referring to the first output terminal OUT1 and the second output terminal OUT2, they will be referred to as "output terminal OUT".

For convenience of explanation, the +X direction, −X direction, +Y direction and −Y direction shown in FIG. 1 and the +Z direction and −Z direction shown in FIG. 4 may be used hereinafter. The +X direction and the -X direction are two directions along the long sides of the case 3 (radiator plate 2), which is substantially rectangular in plan view, and are collectively referred to simply as the "X direction". The +Y direction and the -Y direction are two directions along the short sides of the case 3, and are collectively referred to simply as the "Y direction". The +Z direction and the -Z direction are two directions along the normal line of the radiator plate 2, and are collectively referred to simply as the "Z direction". When the radiator plate 2 is placed on a horizontal plane, the X direction and the Y direction are two horizontal directions (first horizontal direction and second horizontal direction) along two horizontal straight lines (X axis and Y axis) perpendicular to each other. The direction is the vertical direction (height direction) along the vertical straight line (Z-axis).

The radiator plate 2 is a plate-like body that is rectangular in plan view and has a uniform thickness, and is made of a material with high thermal conductivity. More specifically, the heat sink 2 may be a copper plate made of copper. This copper plate may have a nickel plating layer formed on its surface. A heat sink or other cooling means is attached to the surface of the heat sink 2 on the -Z direction side, if necessary.
The case 3 has a substantially rectangular parallelepiped shape and is made of a resin material. In particular, it is preferable to use a heat-resistant resin such as PPS (polyphenylene sulfide). The case 3 has a rectangular shape with substantially the same size as the radiator plate 2 in a plan view, and includes a frame portion 4 fixed to one surface (+Z direction side surface) of the radiator plate 2 and a frame portion 4 fixed to the frame portion 4 . and a top plate (not shown). The top plate faces one surface of the radiator plate 2 that closes one side (+Z direction side) of the frame portion 4 and closes the other side (−Z direction side) of the frame portion 4 . Thus, a circuit accommodating space is defined inside the case 3 by the heat sink 2, the frame portion 4 and the top plate. In this embodiment, the frame 4 and the plurality of terminals are made by simultaneous molding.

The frame portion 4 includes a pair of side walls 6, 7 and a pair of end walls 8, 9 connecting the ends of the pair of side walls 6, 7, respectively. Four corner portions of the +Z direction side surface of the frame portion 4 are formed with concave portions 10 that open outward. The wall of each recess 10 on the side opposite to the outward opening is curved so as to protrude inward. A mounting through-hole 11 is formed through the bottom wall of the recess 10 . A cylindrical metal member 12 is fitted and fixed in the mounting through hole 11 . Mounting through-holes 13 (see FIG. 7) communicating with the mounting through-holes 11 are formed in the heat sink 2 . The power module 1 is fixed at a predetermined fixed position to be mounted by bolts (not shown) inserted through the mounting through holes 11 and 13 of the case 3 and the radiator plate 2 . Using these mounting through holes 11 and 13, cooling means such as the aforementioned heat sink may be mounted.

On the outer surface of the end wall 9, a rectangular terminal block 14 for power supply terminals is formed which is elongated in the Y direction in a plan view. The terminal block 14 for power supply terminals is integrally formed with the end wall 9 . A projecting portion 15 extending in the X direction is formed at the center in the length direction of the surface (+Z direction side surface) of the end wall 9 and the power supply terminal block 14 . A plurality of grooves 16 extending in the X direction are formed on the surface of the projection 15 . A terminal block 21 for the first power terminal P is a portion on the +Y direction side from the center in the length direction of the terminal block 14 for power supply terminals. A terminal block 22 for the second power terminal N is located on the -Y direction side from the center in the length direction of the terminal block 14 for power supply terminals.

On the outer surface of the end wall 8, a rectangular output terminal block 17 elongated in the Y direction in plan view is formed. The output terminal block 17 is formed integrally with the end wall 8 . A projecting portion 18 extending in the X direction is formed at the center in the length direction of the surface (+Z direction side surface) of the end wall 8 and the output terminal block 17 . A plurality of grooves 19 extending in the X direction are formed on the surface of the projection 18 . A portion of the output terminal terminal block 17 on the +Y direction side from the center in the length direction is a terminal block 23 for the first output terminal OUT1. A terminal block 24 for the second output terminal OUT2 is located on the -Y direction side from the longitudinal center of the output terminal block 17 .

A first power supply terminal P is arranged on the surface of the terminal block 21 (surface on the +Z direction side). A second power supply terminal N is arranged on the surface of the terminal block 22 (surface on the +Z direction side). A first output terminal OUT1 is arranged on the surface of the terminal block 23 (surface on the +Z direction side). A second output terminal OUT2 is arranged on the surface of the terminal block 24 (surface on the +Z direction side).
The first power terminal P, the second power terminal N, the first output terminal OUT1, and the second output terminal OUT2 are each made of a conductive plate (for example, a copper plate or a copper plate plated with nickel) in a predetermined shape. It is made by cutting out and bending, and is electrically connected to the circuit inside the case 3 . The tip portions of the first power terminal P, the second power terminal N, the first output terminal OUT1 and the second output terminal OUT2 are led out onto the terminal blocks 21, 22, 23 and 24, respectively. The tip portions of the first power terminal P, the second power terminal N, the first output terminal OUT1 and the second output terminal OUT2 are formed along the surfaces of the terminal blocks 21, 22, 23 and 24, respectively.

A drain sense terminal DS, a first source sense terminal SS1, a first gate terminal G1, and first and second thermistor terminals T1 and T2 are attached to one side wall 7 . The tips of these terminals DS, SS1, G1, T1, and T2 protrude outward (+Z direction) from the surface of the side wall 7 (+Z direction side surface). The drain sense terminal DS is arranged near the end of the side wall 7 in the -X direction. The first and second thermistor terminals T1 and T2 are arranged in the +X direction side end of the side wall 7 with a space therebetween in the X direction. The first source sense terminal SS1 and the first gate terminal G1 are spaced apart in the X direction between the -X direction side end of the side wall 7 and the center in the length direction (X direction).

A second gate terminal G2 and a second source sense terminal SS2 are attached to the other side wall 6 . The tip portions of these terminals G2 and SS2 protrude outward (+Z direction) from the surface of the side wall 6 (+Z direction side surface) of the case 3 . The second gate terminal G2 and the second source sense terminal SS2 are arranged at intervals in the X direction between the center in the longitudinal direction (X direction) of the side wall 6 and the +X direction side end. The drain sense terminal DS, thermistor terminals T1 and T2, the source sense terminals SS1 and SS2, and the gate terminals G1 and G2 are each made of a metal rod having a rectangular cross section (for example, a copper rod or a copper rod plated with nickel). It is made by bending the material of the case 3, and is electrically connected to the circuit inside the case 3. As shown in FIG.

1, 6, 7 and 8, first power supply terminal P is connected to internal wiring connection portion 31A, rising portion 31B connected to internal wiring connection portion 31A, and rising portion 31B. and an external wiring connection portion 31D coupled to the inclined portion 31C. The internal wiring connection portion 31A includes a substantially rectangular base portion 31Aa whose four sides are parallel to the four sides of the heat sink 2 in a plan view, and a comb-shaped terminal 31Ab protruding in the -X direction from the -X direction side end of the base portion 31Aa. and The base portion 31Aa is formed of a plate-like body along the XY plane, and is formed into a shape in which the +X direction side and the +Y direction side corner portion of the four corner portions are cut off. The comb-shaped terminal 31Ab has three terminals arranged side by side in the Y direction. These terminals have a crank shape extending in the -X direction from the -X direction side end of the base portion 31Aa, bending in the -Z direction, and extending again in the -X direction. Most of the base portion 31Aa is embedded inside the end wall 9 and the terminal block 21 .

The rising portion 31B rises in the +Z direction from the −Y direction side edge of the base portion 31Aa of the internal wiring connection portion 31A. The rising portion 31B is made of a plate-like body along the XZ plane, and is formed to have a width substantially equal to the length of the -Y direction side edge portion of the base portion 31Aa. The rising portion 31B is embedded inside the end wall 9 and the terminal block 21 . The inclined portion 31C is coupled to the +Z direction side edge portion of the rising portion 31B and extends obliquely in the +Z direction toward the +Y direction. The inclined portion 31C is formed of a plate-like body extending in the oblique direction, and is formed to have substantially the same width as the rising portion 31B. The inclined portion 31C is embedded inside the end wall 9 and the terminal block 21 .

The external wiring connection portion 31D is coupled to the +Z direction side edge portion of the inclined portion 31C and extends in the +Y direction. The external wiring connection portion 31D is made of a plate-like body along the XY plane, and is formed to have substantially the same width as the inclined portion 31C. The external wiring connection portion 31</b>D is arranged along the surface of the terminal block 21 . An insertion hole 31Da for external wiring connection is formed in a substantially central portion of the external wiring connection portion 31D. A nut 35 (see FIG. 6) is fixed to the -Z direction surface of the external wiring connection portion 31D so that the screw hole is aligned with the insertion hole 31Da. This nut 35 is embedded inside the terminal block 21 .

The second power terminal N has a shape that is symmetrical with the first power terminal P with respect to the XZ plane passing through the center of the length of the end wall 9 . The second power supply terminal N includes an internal wiring connection portion 32A, a rising portion 32B coupled to the internal wiring connection portion 32A, an inclined portion 32C coupled to the rising portion 32B, and an external wiring connection coupled to the inclined portion 32C. and a portion 32D. The internal wiring connection portion 32A includes a substantially rectangular base portion 32Aa whose four sides are parallel to the four sides of the heat sink 2 in plan view, and a comb-shaped terminal 32Ab protruding in the -X direction from the -X direction side end of the base portion 32Aa. and The base portion 32Aa is formed of a plate-like body along the XY plane, and is formed in a shape in which the corner portion on the +X direction side and the −Y direction side among the four corner portions is cut off. The comb-like terminal 32Ab has three terminals arranged side by side in the Y direction. These terminals have a crank shape extending in the -X direction from the -X direction side end of the base portion 32Aa, bending in the -Z direction, and extending again in the -X direction. Most of the base portion 32</b>Aa is embedded inside the end wall 9 and the terminal block 22 .

The rising portion 32B rises in the +Z direction from the +Y direction side edge of the base portion 32Aa of the internal wiring connection portion 32A. The rising portion 32B is formed of a plate-like body along the XZ plane, and is formed to have substantially the same width as the length of the +Y direction side edge portion of the base portion 32Aa. The upright portion 32B is embedded inside the end wall 9 and the terminal block 22 . The inclined portion 32C is coupled to the +Z direction side edge portion of the rising portion 32B and extends obliquely in the +Z direction toward the -Y direction. The inclined portion 32C is formed of a plate-like body extending in the oblique direction, and is formed to have substantially the same width as the rising portion 32B. The inclined portion 32</b>C is embedded inside the end wall 9 and the terminal block 22 .

The external wiring connection portion 32D is coupled to the +Z direction side edge portion of the inclined portion 32C and extends in the -Y direction. The external wiring connection portion 32D is made of a plate-like body along the XY plane and formed to have substantially the same width as the inclined portion 32C. The external wiring connection portion 32</b>D is arranged along the surface of the terminal block 22 . An insertion hole 32Da for external wiring connection is formed in a substantially central portion of the external wiring connection portion 32D. A nut 36 (see FIG. 6) is fixed to the -Z direction surface of the external wiring connection portion 32D so that the screw hole is aligned with the insertion hole 32Da. This nut 36 is embedded inside the terminal block 22 .

The rising portion 31B of the first power supply terminal P and the rising portion 32B of the second power supply terminal N are arranged to face each other with a predetermined gap therebetween, and constitute the "plate-shaped facing portion" of the present invention. there is The rising portion 31B and the inclined portion 31C of the first power terminal P constitute the "first connecting portion" of the present invention. The rising portion 32B and the inclined portion 32C of the second power terminal N constitute the "second connecting portion" of the present invention.

The first output terminal OUT1 has a shape that is symmetrical to the first power supply terminal P with respect to the YZ plane passing through the center of the length of the side wall 7 . The first output terminal OUT1 includes an internal wiring connection portion 33A, a rising portion 33B coupled to the internal wiring connection portion 33A, an inclined portion 33C coupled to the rising portion 33B, and an external wiring connection coupled to the inclined portion 33C. and a portion 33D. The internal wiring connection portion 33A includes a substantially rectangular base portion 33Aa whose four sides are parallel to the four sides of the heat sink 2 in plan view, and a comb-shaped terminal 33Ab protruding in the +X direction from the +X direction side end of the base portion 33Aa. have. The base portion 33Aa is formed of a plate-like body along the XY plane, and is formed in a shape in which the corner portion on the −X direction side and the +Y direction side among the four corner portions is cut off. The comb-shaped terminal 33Ab has three terminals arranged side by side in the Y direction. These terminals have a crank shape extending in the +X direction from the +X direction side end of the base portion 33Aa, bending in the -Z direction, and extending again in the +X direction. Most of the base portion 33</b>Aa is embedded inside the end wall 8 and the terminal block 23 .

The rising portion 33B rises in the +Z direction from the -Y direction side edge of the base portion 33Aa of the internal wiring connection portion 33A. The rising portion 33B is formed of a plate-like body along the XZ plane, and is formed to have substantially the same width as the length of the -Y direction side edge portion of the base portion 33Aa. The rising portion 33B is embedded inside the end wall 8 and the terminal block 23 . The inclined portion 33C is coupled to the +Z direction side edge portion of the rising portion 33B and extends obliquely in the +Z direction toward the +Y direction. The inclined portion 33C is formed of a plate-like body extending in the oblique direction, and is formed to have substantially the same width as the rising portion 33B. The inclined portion 33C is embedded inside the end wall 8 and the terminal block 23 .

The external wiring connection portion 33D is coupled to the +Z direction side edge portion of the inclined portion 33C and extends in the +Y direction. The external wiring connection portion 33D is made of a plate-like body along the XY plane, and is formed to have substantially the same width as the inclined portion 33C. The external wiring connection portion 33D is arranged along the surface of the terminal block 23 . An insertion hole 33Da for external wiring connection is formed in a substantially central portion of the external wiring connection portion 33D. A nut (not shown) is fixed to the −Z direction surface of the external wiring connection portion 33D so that the screw hole is aligned with the insertion hole 33Da. This nut is embedded inside the terminal block 23 .

The second output terminal OUT2 has a shape that is symmetrical with the first output terminal OUT1 with respect to the XZ plane passing through the center of the length of the end wall 8 . The second output terminal OUT2 includes an internal wiring connection portion 34A, a rising portion 34B coupled to the internal wiring connection portion 34A, an inclined portion 34C coupled to the rising portion 34B, and an external wiring connection coupled to the inclined portion 34C. and a portion 34D. The internal wiring connection portion 34A includes a substantially rectangular base portion 34Aa whose four sides are parallel to the four sides of the heat sink 2 in plan view, and a comb-shaped terminal 34Ab protruding in the +X direction from the +X direction side end of the base portion 34Aa. have. The base portion 34Aa is formed of a plate-like body along the XY plane, and is formed into a shape in which the corner portion on the -X direction side and the -Y direction side among the four corner portions is cut off. The comb-shaped terminal 34Ab has three terminals arranged side by side in the Y direction. These terminals have a crank shape extending in the +X direction from the +X direction side end of the base portion 34Aa, bending in the -Z direction, and extending again in the +X direction. Most of the base portion 34Aa is embedded inside the end wall 8 and the terminal block 24 .

The rising portion 34B rises in the +Z direction from the +Y direction side edge of the base portion 34Aa of the internal wiring connection portion 34A. The rising portion 34B is formed of a plate-like body along the XZ plane, and is formed to have substantially the same width as the length of the +Y direction side edge portion of the base portion 34Aa. The upright portion 34B is embedded inside the end wall 8 and the terminal block 24 . The inclined portion 34C is coupled to the +Z direction side edge portion of the rising portion 34B and extends obliquely in the +Z direction toward the -Y direction. The inclined portion 34C is formed of a plate-like body extending in the oblique direction, and is formed to have substantially the same width as the rising portion 34B. The inclined portion 34C is embedded inside the end wall 8 and the terminal block 24 .

The external wiring connection portion 34D is coupled to the +Z direction side edge portion of the inclined portion 34C and extends in the -Y direction. The external wiring connection portion 34D is made of a plate-like body along the XY plane and formed to have substantially the same width as the inclined portion 34C. The external wiring connection portion 34D is arranged along the surface of the terminal block 24 . An insertion hole 34Da for external wiring connection is formed in a substantially central portion of the external wiring connection portion 34D. A nut (not shown) is fixed to the -Z direction surface of the external wiring connection portion 34D so that the screw hole is aligned with the insertion hole 34Da. This nut is embedded inside the terminal block 24 .

The drain sense terminals DS are crank-shaped when viewed in the X direction, and their intermediate portions are embedded in the sidewalls 7 . A base end portion of the drain sense terminal DS is arranged inside the case 3 . The tip of the drain sense terminal DS protrudes from the surface of the side wall 7 in the +Z direction.
The first source sense terminals SS1 are crank-shaped when viewed from the X direction, and their intermediate portions are embedded in the side walls 7. As shown in FIG. A base end portion of the first source sense terminal SS1 is arranged inside the case 3 . The tip of the first source sense terminal SS1 protrudes from the surface of the side wall 7 in the +Z direction.

The first gate terminals G1 are crank-shaped when viewed from the X direction, and their intermediate portions are embedded in the side walls 7. As shown in FIG. A base end portion of the first gate terminal G1 is arranged inside the case 3 . The tip of the first gate terminal G1 protrudes from the surface of the side wall 7 in the +Z direction.
Each thermistor terminal T1, T2 is crank-shaped when viewed from the X direction, and their middle portions are embedded in the side wall 7. As shown in FIG. Base ends of the thermistor terminals T1 and T2 are arranged inside the case 3 . The tips of the thermistor terminals T1 and T2 protrude from the surface of the side wall 7 in the +Z direction.

The second source sense terminals SS2 are crank-shaped when viewed in the X direction, and their intermediate portions are embedded in the sidewalls 6. As shown in FIG. A base end portion of the second source sense terminal SS2 is arranged inside the case 3 . The tip of the second source sense terminal SS2 protrudes from the surface of the side wall 6 in the +Z direction.
The second gate terminals G2 are crank-shaped when viewed in the X direction, and their intermediate portions are embedded in the side walls 6. As shown in FIG. A base end portion of the second gate terminal G2 is arranged inside the case 3 . The tip of the second gate terminal G2 protrudes from the surface of the side wall 6 in the +Z direction.

A first assembly 40 and a second assembly 80 are arranged side by side in the X direction in a region surrounded by the frame portion 4 on the surface (+Z direction side surface) of the heat sink 2 . The first assembly 40 is arranged on the power supply terminals P, N side, and the second assembly 80 is arranged on the output terminal OUT side. The first assembly 40 constitutes one half of the upper arm (high side) circuit and one half of the lower arm (low side) circuit. The second assembly 80 comprises the other half of the upper arm circuit and the other half of the lower arm circuit. One of the upper arm circuit and the lower arm circuit constitutes the "first circuit" of the present invention, and the other constitutes the "second circuit" of the present invention.

The first assembly 40 includes a first insulating substrate 41, a plurality of first switching elements Tr1, a plurality of first diode elements Di1, a plurality of second switching elements Tr2, a plurality of second diode elements Di2, and a thermistor. and Th.
The first insulating substrate 41 has a substantially rectangular shape in plan view, and is joined to the surface of the heat sink 2 in such a manner that four sides thereof are parallel to the four sides of the heat sink 2 . A first bonding conductor layer 42 (see FIG. 4) is formed on the surface of the first insulating substrate 41 on the side of the radiator plate 2 (surface on the −Z direction side). The first bonding conductor layer 42 is bonded to the radiator plate 2 via the solder layer 52 .

A plurality of conductor layers for upper arm circuits, a plurality of conductor layers for lower arm circuits, and a plurality of conductor layers for thermistors are formed on the surface of the first insulating substrate 41 opposite to the heat sink 2 (the surface on the +Z direction side). A conductor layer of is formed. The plurality of conductor layers for the upper arm circuit includes a first element bonding conductor layer 43 , a first gate terminal conductor layer 44 , and a first source sense terminal conductor layer 45 . The plurality of conductor layers for the lower arm circuit includes a second element bonding conductor layer 46, an N terminal conductor layer 47, a second gate terminal conductor layer 48, and a second source sense terminal conductor layer 49. include. The multiple conductor layers for the thermistor include a first thermistor terminal conductor layer 50 and a second thermistor terminal conductor layer 51 .

In this embodiment, the first insulating substrate 41 is made of AlN (aluminum nitride). As the first insulating substrate 41, for example, a substrate in which copper foil is directly bonded to both surfaces of ceramics (DBC: Direct Bonding Copper) can be used. When a DBC substrate is used as the first insulating substrate 41, the conductor layers 42 to 51 can be formed from its copper foil.
The first element-bonding conductor layer 43 is arranged near the +Y direction side on the surface of the first insulating substrate 41 and has a rectangular shape elongated in the X direction in a plan view. The first element bonding conductor layer 43 has a projecting portion extending in the -Y direction at its +X direction side end. The N-terminal conductor layer 47 is arranged near the −Y direction side on the surface of the first insulating substrate 41 and has a rectangular shape elongated in the X direction in a plan view. The N terminal conductor layer 47 has a projecting portion extending toward the projecting portion of the first element bonding conductor layer 43 at its +X direction side end. The second element-bonding conductor layer 46 is arranged in a region surrounded by the first element-bonding conductor layer 43, the N-terminal conductor layer 47, and the −X direction side of the first insulating substrate 41 in plan view. and has a rectangular shape elongated in the X direction in plan view.

The first gate terminal conductor layer 44 is arranged between the first element bonding conductor layer 43 and the side of the first insulating substrate 41 on the +Y direction side, and has a rectangular shape elongated in the X direction in plan view. The first source/sense terminal conductor layer 45 is arranged between the first gate terminal conductor layer 44 and the side of the first insulating substrate 41 on the +Y direction side, and has a rectangular shape elongated in the X direction in plan view.
The first thermistor terminal conductor layer 50 is arranged on the +X direction side of the first gate terminal conductor layer 44 between the first element bonding conductor layer 43 and the +Y direction side of the first insulating substrate 41 . ing. The second thermistor terminal conductor layer 51 is arranged on the +X direction side of the first source sense terminal conductor layer 45 between the first element bonding conductor layer 43 and the +Y direction side of the first insulating substrate 41 . It is

The second gate terminal conductor layer 48 is arranged between the N terminal conductor layer 47 and the -Y direction side of the first insulating substrate 41, and has a rectangular shape elongated in the X direction in plan view. The second source/sense terminal conductor layer 49 is arranged between the second gate terminal conductor layer 48 and the -Y direction side of the first insulating substrate 41, and has a rectangular shape elongated in the X direction in plan view.
The comb-shaped terminal 31Ab of the first power supply terminal P is bonded to the +X direction side end of the surface of the first element bonding conductor layer 43 . The comb-shaped terminal 32Ab of the second power supply terminal N is joined to the +X direction side end of the surface of the conductor layer 47 for the N terminal. Since the internal wiring connection portion 31A of the first power supply terminal P has a comb-shaped terminal 31Ab, when joining the first power supply terminal P to the first element joining conductor layer 43, for example, an ultrasonic joining head is pressed against the tip of the comb-shaped terminal 31Ab, the comb-shaped terminal 31Ab can be easily ultrasonically bonded to the first element-bonding conductor layer 43. As shown in FIG. Further, since the internal wiring connection portion 32A of the second power supply terminal N has the comb-shaped terminal 32Ab, when joining the second power supply terminal N to the N-terminal conductor layer 47, for example, an ultrasonic joining head is pressed against the tip of the comb-shaped terminal 32Ab, and the comb-shaped terminal 32Ab can be easily ultrasonically bonded to the conductor layer 47 for the N terminal.

A base end portion of the second gate terminal G2 is joined to the conductor layer 48 for the second gate terminal. A base end portion of the second source sense terminal SS2 is joined to the conductor layer 49 for the second source sense terminal. A base end portion of the first thermistor terminal T1 is joined to the conductor layer 50 for the first thermistor terminal. A base end portion of the second thermistor terminal T2 is joined to the conductor layer 51 for the second thermistor terminal. These joints may be made by ultrasonic welding.

A thermistor Th is arranged on the conductor layer 50 for the first thermistor terminal and the conductor layer 51 for the second thermistor terminal so as to straddle them. One electrode of the thermistor Th is joined to the conductor layer 50 for the first thermistor terminal, and the other electrode is joined to the conductor layer 51 for the second thermistor terminal.
Drain electrodes of a plurality of first switching elements Tr1 are bonded to the surface of the first element bonding conductor layer 43 via a solder layer 53 (see FIG. 4), and cathode electrodes of a plurality of first diode elements Di1 are connected to the surface of the first element bonding conductor layer 43. are joined via a solder layer 54 . In this embodiment, the material of these solder layers 53 and 54 is SnAgCu-based solder. In this embodiment, the thickness of these solder layers 53, 54 is thinner (eg, 0.08 mm) than the typical thickness (eg, 0.12 mm). Each first switching element Tr1 has a source electrode and a gate electrode on the surface opposite to the surface bonded to the first element bonding conductor layer 43 . Each first diode element Di1 has an anode electrode on the surface opposite to the surface bonded to the first element bonding conductor layer 43 .

Five first diode elements Di1 are arranged side by side in the X direction at intervals in the +Y direction on the surface of the first element bonding conductor layer 43 . In addition, five first switching elements Tr1 are arranged side by side at intervals in the X direction between the −Y direction side of the first element bonding conductor layer 43 and the five first diode elements Di1. ing. The five first switching elements Tr1 are aligned with the five first diode elements Di1 in the Y direction.

The first switching element Tr1 and the first diode element Di1 aligned in the Y direction are connected to the second element bonding conductor layer 46 by a first connection metal member 55 extending substantially in the Y direction in plan view. ing. The first connection metal member 55 has a rectangular shape elongated in the Y direction in plan view. The first connection metal member 55 is formed by bending a conductive plate (for example, a copper plate or a nickel-plated copper plate). The first connection metal member 55 includes a joint portion 55a (see FIG. 4) joined to the second element-joining conductor layer 46, a raised portion 55b joined to the joint portion 55a, and a horizontal portion joined to the raised portion 55b. and a portion 55c.

The joint portion 55a is joined to a region near the +Y-direction side edge of the second element-bonding conductor layer 46 via the solder layer 56, and is formed in a rectangular shape extending in the X direction in plan view. The rising portion 55b rises in the +Z direction from the +Y direction side edge of the joint portion 55a. The rising portion 55b is made of a plate-like body along the XZ plane, and is formed to have substantially the same width as the joint portion 55a. The transverse portion 55c is coupled to the +Z direction side edge of the rising portion 55b and extends in the +Y direction. A length intermediate portion and a tip portion of the transverse portion 55c are arranged above the first switching element Tr1 and the first diode element Di1, respectively. The horizontal portion 55c is made of a plate-like body parallel to the main surface of the heat sink 2 and formed to have substantially the same width as the rising portion 55b. The tip of the transverse portion 55c (the end in the +Y direction) is joined to the anode electrode of the first diode element Di1 through the solder layer 57, and the intermediate portion of the transverse portion 55c is connected through the solder layer 58 to the first switching terminal. It is joined to the source electrode of the element Tr1. As a result, the anode electrode of the first diode element Di1 and the source electrode of the first switching element Tr1 are electrically connected to the second element bonding conductor layer 46 via the first connection metal member 55 .

The width (length in the X direction) of the first connection metal member 55 is shorter than the width (length in the X direction) of the first switching element Tr1. In plan view, the +X direction side edge of the horizontal portion 55c of the first connection metal member 55 is aligned with the +X direction side edge of the first switching element Tr1 and the first diode element Di1. In a plan view, the −X direction side edge of the horizontal portion 55c of the first connection metal member 55 is located on the +X direction side relative to the −X direction side edges of the first switching element Tr1 and the first diode element Di1. As a result, in the case 3, of the +Z direction side surfaces of the first switching element Tr1 and the first diode element Di1, the regions near the -X direction side edges are exposed.

A gate electrode of each first switching element Tr1 is connected to the first gate terminal conductor layer 44 by a wire 59 . A source electrode of each first switching element Tr1 is connected to the conductor layer 45 for the first source sense terminal by a wire 60 .
Drain electrodes of a plurality of second switching elements Tr2 are bonded to the surface of the second element bonding conductor layer 46 via a solder layer 61 (see FIG. 4), and cathode electrodes of a plurality of second diode elements Di2 are connected to the surface of the second element bonding conductor layer 46. are joined via a solder layer 62 . In this embodiment, the material of these solder layers 61 and 62 is SnAgCu-based solder. In this embodiment, the thickness of these solder layers 61 and 62 is thinner (eg, 0.08 mm) than the general thickness (eg, 0.12 mm). Each second switching element Tr2 has a source electrode and a gate electrode on the surface opposite to the surface bonded to the second element bonding conductor layer 46 . Each second diode element Di2 has an anode electrode on the surface opposite to the surface bonded to the second element bonding conductor layer 46 .

Five second switching elements Tr2 are arranged side by side in the X direction at intervals in the -Y direction on the surface of the second element bonding conductor layer 46 . In addition, between the +Y direction side of the second element bonding conductor layer 46 and the five second switching elements Tr2, five second diode elements Di2 are arranged side by side at intervals in the X direction. there is The five second diode elements Di2 are aligned with the five second switching elements Tr2 in the Y direction. In addition, the five second diode elements Di2 are also aligned with the five first switching elements Tr1 in the Y direction.

The second switching element Tr2 and the second diode element Di2 aligned in the Y direction are connected to the N-terminal conductor layer 47 by a second connection metal member 65 extending substantially in the Y direction in plan view. . The second connection metal member 65 is formed by bending a conductive plate (for example, a copper plate or a nickel-plated copper plate). The second connection metal member 65 includes a joint portion 65a (see FIG. 4) joined to the N-terminal conductor layer 47, a raised portion 65b joined to the joint portion 65a, and a horizontal portion 65c joined to the raised portion 65b. Consists of

The joint portion 65a is joined to a region near the +Y direction side edge of the N-terminal conductor layer 47 via a solder layer 66, and is formed in a rectangular shape extending in the X direction in plan view. The rising portion 65b rises in the +Z direction from the +Y direction side edge of the joint portion 65a. The upright portion 65b is made of a plate-like body along the XZ plane, and is formed to have substantially the same width as the joint portion 65a. The transverse portion 65c is coupled to the +Z direction side edge of the rising portion 65b and extends in the +Y direction. A length intermediate portion and a tip portion of the transverse portion 65c are arranged above the second switching element Tr2 and the second diode element Di2, respectively. The transverse portion 65c is made of a plate-like body parallel to the main surface of the heat sink 2 and formed to have substantially the same width as the rising portion 65b. The tip of the transverse portion 65c (the end in the +Y direction) is joined to the anode electrode of the second diode element Di2 via the solder layer 67, and the intermediate portion of the transverse portion 65c is connected via the solder layer 68 to the second switching switching element. It is joined to the source electrode of the element Tr2. Thus, the anode electrode of the second diode element Di2 and the source electrode of the second switching element Tr2 are electrically connected to the N-terminal conductor layer 47 via the second connection metal member 65 .

The width (length in the X direction) of the second connection metal member 65 is shorter than the width (length in the X direction) of the second switching element Tr2. In plan view, the +X direction side edge of the horizontal portion 65c of the second connection metal member 65 is aligned with the +X direction side edge of the second switching element Tr2 and the second diode element Di2. In a plan view, the −X direction side edge of the horizontal portion 65c of the second connection metal member 65 is positioned on the +X direction side relative to the −X direction side edges of the second switching element Tr2 and the second diode element Di2. As a result, in the case 3, of the surfaces on the +Z direction side of the second switching element Tr2 and the second diode element Di2, the regions near the edges in the -X direction are exposed.

A gate electrode of each second switching element Tr2 is connected to the second gate terminal conductor layer 48 by a wire 69 . A source electrode of each second switching element Tr2 is connected to the conductor layer 49 for the second source sense terminal by a wire 70 .
The second assembly 80 includes a second insulating substrate 81, a plurality of third switching elements Tr3, a plurality of third diode elements Di3, a plurality of fourth switching elements Tr4, and a plurality of fourth diode elements Di4. .

The first switching element Tr1 of the first assembly 40 and/or the third switching element Tr3 of the second assembly 80 constitute the "first switching element" of the present invention. The second switching element Tr2 of the first assembly 40 and/or the fourth switching element Tr4 of the second assembly 80 constitute the "second switching element" of the present invention. The first diode element Di3 of the first assembly 40 and/or the third diode element Di3 of the second assembly 80 constitute the "first diode element" of the present invention. The second diode element Di2 of the first assembly 40 and/or the fourth diode element Di4 of the second assembly 80 constitute the "second diode element" of the present invention.

The second insulating substrate 81 has a substantially rectangular shape in a plan view, and is bonded to the surface of the heat sink 2 with four sides parallel to the four sides of the heat sink 2 . A second bonding conductor layer 82 (see FIG. 5) is formed on the surface of the second insulating substrate 81 on the side of the radiator plate 2 (surface on the −Z direction side). This second bonding conductor layer 82 is bonded to the radiator plate 2 via a solder layer 90 .
A plurality of conductor layers for the upper arm circuit and a plurality of conductor layers for the lower arm circuit are formed on the surface of the second insulating substrate 81 opposite to the heat sink 2 (the surface on the +Z direction side). . The plurality of conductor layers for the upper arm circuit includes a third element bonding conductor layer 83, a third gate terminal conductor layer 84, and a third source sense terminal conductor layer 85. FIG. The plurality of conductor layers for the lower arm circuit includes a fourth element bonding conductor layer 86, a source conductor layer 87, a fourth gate terminal conductor layer 88, and a fourth source sense terminal conductor layer 89. .

The first element-bonding conductor layer 43 of the first assembly 40 and/or the third element-bonding conductor layer 83 of the second assembly 80 constitute the "first element-bonding conductor layer" of the present invention. The second element-bonding conductor layer 46 of the first assembly 40 and/or the fourth element-bonding conductor layer 86 of the second assembly 80 constitute the "second element-bonding conductor layer" of the present invention. The N terminal conductor layer 47 of the first assembly 40 and/or the source conductor layer 87 of the second assembly 80 constitute the "second power supply terminal conductor layer" of the present invention.

In this embodiment, the second insulating substrate 81 is made of AlN (aluminum nitride). As the second insulating substrate 81, for example, a substrate in which copper foil is directly bonded to both surfaces of ceramics (DBC: Direct Bonding Copper) can be used. When a DBC substrate is used as the second insulating substrate 81, the conductor layers 82 to 89 can be formed from its copper foil.
The third element-bonding conductor layer 83 is arranged near the +Y direction side on the surface of the second insulating substrate 81 and has a rectangular shape elongated in the X direction in a plan view. The third element bonding conductor layer 83 has a projecting portion extending in the +Y direction at its -X direction side end. A base end portion of the drain sense terminal DS is joined to the projecting portion.

The source conductor layer 87 is arranged near the −Y direction side on the surface of the second insulating substrate 81, and has a rectangular shape elongated in the X direction in plan view. The fourth element bonding conductor layer 86 is T-shaped in plan view. The fourth element-bonding conductor layer 86 is disposed between the third element-bonding conductor layer 83 and the source conductor layer 87, and has a rectangular element-bonding portion 86a elongated in the X direction in plan view, and a second element-bonding conductor layer 86a. and an output terminal joint portion 86b extending along the side of the insulating substrate 81 on the -X direction side. The −X direction end of the element joint portion 86a is connected to the length center portion of the output terminal joint portion 86b.

The third gate terminal conductor layer 84 is arranged between the third element bonding conductor layer 83 and the side of the second insulating substrate 81 on the +Y direction side, and has a rectangular shape elongated in the X direction in plan view. The third source/sense terminal conductor layer 85 is arranged between the third gate terminal conductor layer 84 and the side of the second insulating substrate 81 on the +Y direction side, and has a rectangular shape elongated in the X direction in plan view.
The fourth gate terminal conductor layer 88 is arranged between the source conductor layer 87 and the -Y direction side of the second insulating substrate 81, and has a rectangular shape elongated in the X direction in plan view. The fourth source/sense terminal conductor layer 89 is arranged between the fourth gate terminal conductor layer 88 and the -Y direction side of the second insulating substrate 81, and has a rectangular shape elongated in the X direction in plan view.

The comb-shaped terminal 33Ab of the first output terminal OUT1 and the comb-shaped terminal 34Ab of the second output terminal OUT2 are joined to the surface of the output terminal joint portion 86b of the fourth element-joining conductor layer 86. FIG. Since the internal wiring connection portion 33A of the first output terminal OUT1 has a comb-shaped terminal 33Ab, when joining the first output terminal OUT1 to the output terminal joint portion 86b, for example, a head for ultrasonic bonding is used. The comb-shaped terminal 33Ab can be easily ultrasonically bonded to the output terminal bonding portion 86b by pressing against the tip of the shaped terminal 33Ab. In addition, since the internal wiring connection portion 34A of the second output terminal OUT2 has a comb-like terminal 34Ab, when joining the second output terminal OUT2 to the output terminal joining portion 86b, for example, an ultrasonic joining head is used. The comb-shaped terminal 34Abc can be easily ultrasonically bonded to the output terminal joint portion 86b by pressing against the tip of the comb-shaped terminal 34Ab.

A base end portion of the first gate terminal G1 is joined to the conductor layer 84 for the third gate terminal. The base end portion of the first source sense terminal SS1 is joined to the conductor layer 85 for the third source sense terminal. These joints may be made by ultrasonic welding.
Drain electrodes of the plurality of third switching elements Tr3 are bonded to the surface of the third element bonding conductor layer 83 via solder layers 91 (see FIG. 5), and cathode electrodes of the plurality of third diode elements Di3 are connected to the surface of the third element bonding conductor layer 83. are joined via a solder layer 92 . The solder layer 53 and/or the solder layer 91 described above constitute the "first solder layer" of the present invention. The solder layer 54 and/or the solder layer 92 described above constitute the "third solder layer" of the present invention. In this embodiment, the material of these solder layers 91 and 92 is SnAgCu-based solder. In this embodiment, the thickness of these solder layers 91 and 92 is thinner (eg, 0.08 mm) than the general thickness (eg, 0.12 mm). Each third switching element Tr3 has a source electrode and a gate electrode on the surface opposite to the surface bonded to the third element bonding conductor layer 83 . Each third diode element Di3 has an anode electrode on the surface opposite to the surface bonded to the third element bonding conductor layer 83 .

Five third diode elements Di3 are arranged side by side in the X direction at intervals in the +Y direction on the surface of the third element bonding conductor layer 83 . In addition, five third switching elements Tr3 are arranged side by side at intervals in the X direction between the −Y direction side of the third element bonding conductor layer 203 and the five third diode elements Di3. ing. The five third switching elements Tr3 are aligned with the five third diode elements Di3 in the Y direction.

The third switching element Tr3 and the third diode element Di3 aligned in the Y direction are connected to the fourth element bonding conductor layer 86 by a third connection metal member 95 extending substantially in the Y direction in plan view. ing. The third connection metal member 95 is formed by bending a conductive plate (for example, a copper plate or a nickel-plated copper plate). The third connection metal member 95 includes a joint portion 95a (see FIG. 5) joined to the fourth element-joining conductor layer 86, a raised portion 95b joined to the joint portion 95a, and a horizontal portion joined to the raised portion 95b. and a portion 95c.

The joint portion 95a is joined to a region near the +Y-direction side edge of the fourth element-bonding conductor layer 86 via a solder layer 96, and is formed in a rectangular shape extending in the X direction in plan view. The rising portion 95b rises in the +Z direction from the +Y direction side edge of the joint portion 95a. The rising portion 95b is made of a plate-like body along the XZ plane, and is formed to have substantially the same width as the joint portion 95a. The transverse portion 95c is coupled to the +Z direction side edge of the rising portion 95b and extends in the +Y direction. A length intermediate portion and a tip portion of the transverse portion 95c are arranged above the third switching element Tr3 and the third diode element Di3, respectively. The horizontal portion 95c is made of a plate-like body parallel to the main surface of the heat sink 2 and formed to have substantially the same width as the rising portion 95b. The tip of the transverse portion 95c (the end in the +Y direction) is joined to the anode electrode of the third diode element Di3 through the solder layer 97, and the intermediate portion of the transverse portion 95c is connected through the solder layer 98 to the third switching terminal. It is joined to the source electrode of the element Tr3. Thereby, the anode electrode of the third diode element Di3 and the source electrode of the third switching element Tr3 are electrically connected to the fourth element bonding conductor layer 86 via the third connection metal member 95 .

The width (length in the X direction) of the third connection metal member 95 is shorter than the width (length in the X direction) of the third switching element Tr3. In plan view, the -X direction side edge of the horizontal portion 95c of the third connection metal member 95 is aligned with the -X direction side edges of the third switching element Tr3 and the third diode element Di3. In a plan view, the +X direction side edge of the horizontal portion 95c of the third connection metal member 95 is located on the -X direction side of the +X direction side edges of the third switching element Tr3 and the third diode element Di3. As a result, in the case 3, of the +Z direction side surfaces of the third switching element Tr3 and the third diode element Di3, the regions near the +X direction side edges are exposed.

A gate electrode of each third switching element Tr3 is connected to the third gate terminal conductor layer 84 by a wire 99 . A source electrode of each third switching element Tr3 is connected to the third source sense terminal conductor layer 85 by a wire 100 .
Drain electrodes of a plurality of fourth switching elements Tr4 are bonded to the surface of the fourth element bonding conductor layer 86 via a solder layer 101 (see FIG. 5), and cathode electrodes of a plurality of fourth diode elements Di4 are connected to the surface of the fourth element bonding conductor layer 86. are joined through the solder layer 102 . The solder layer 61 and/or the solder layer 101 described above constitute the "second solder layer" of the present invention. The solder layer 62 and/or the solder layer 102 described above constitute the "fourth solder layer" of the present invention. In this embodiment, the material of these solder layers 101 and 102 is SnAgCu-based solder. In this embodiment, the thickness of these solder layers 101 and 102 is thinner (eg, 0.08 mm) than the typical thickness (eg, 0.12 mm). Each fourth switching element Tr4 has a source electrode and a gate electrode on the surface opposite to the surface bonded to the fourth element bonding conductor layer 86 . Each fourth diode element Di4 has an anode electrode on the surface opposite to the surface bonded to the fourth element bonding conductor layer 86 .

Five fourth switching elements Tr4 are arranged side by side at intervals in the X direction near the −Y direction side of the surface of the fourth element bonding conductor layer 86 . In addition, between the +Y direction side of the fourth element bonding conductor layer 86 and the five fourth switching elements Tr4, five fourth diode elements Di4 are arranged side by side at intervals in the X direction. there is The five fourth diode elements Di4 are aligned with the five fourth switching elements Tr4 in the Y direction. In addition, the five fourth diode elements Di4 are also aligned with the five third switching elements Tr3 in the Y direction.

The fourth switching element Tr4 and the fourth diode element Di4 aligned in the Y direction are connected to the source conductor layer 87 by a fourth connection metal member 105 extending substantially in the Y direction in plan view. The fourth connection metal member 105 is formed by bending a conductive plate (for example, a copper plate or a nickel-plated copper plate). The fourth connection metal member 105 includes a joint portion 105a (see FIG. 5) joined to the source conductor layer 87, a raised portion 105b joined to the joint portion 105a, and a horizontal portion 105c joined to the raised portion 105b. consists of

The joint portion 105a is joined to a region near the edge of the source conductor layer 87 in the +Y direction via a solder layer 106, and is formed in a rectangular shape extending in the X direction in plan view. The rising portion 105b rises in the +Z direction from the +Y direction side edge of the joint portion 105a. The upright portion 105b is formed of a plate-like body along the XZ plane, and is formed to have substantially the same width as the joint portion 105a. The transverse portion 105c is coupled to the +Z direction side edge of the rising portion 105b and extends in the +Y direction. A length intermediate portion and a tip portion of the transverse portion 105c are arranged above the fourth switching element Tr4 and the fourth diode element Di4, respectively. The horizontal portion 105c is made of a plate-like body parallel to the main surface of the heat sink 2 and formed to have substantially the same width as the rising portion 105b. The front end (+Y direction side end) of the transverse portion 105c is joined to the anode electrode of the fourth diode element Di4 through the solder layer 107, and the intermediate portion of the transverse portion 105c is connected through the solder layer 108 to the fourth switching terminal. It is joined to the source electrode of the element Tr4. As a result, the anode electrode of the fourth diode element Di4 and the source electrode of the fourth switching element Tr4 are electrically connected to the source conductor layer 87 via the fourth connection metal member 105 .

The width (length in the X direction) of the fourth connection metal member 105 is shorter than the width (length in the X direction) of the fourth switching element Tr4. In plan view, the -X direction side edge of the horizontal portion 105c of the fourth connection metal member 105 is aligned with the -X direction side edges of the fourth switching element Tr4 and the fourth diode element Di4. In plan view, the +X direction side edge of the horizontal portion 105c of the fourth connection metal member 105 is located on the -X direction side of the +X direction side edge of the fourth switching element Tr4 and the fourth diode element Di4. As a result, in the case 3, of the +Z-direction surfaces of the fourth switching element Tr4 and the fourth diode element Di4, the +X-direction edge-side regions are exposed.

A gate electrode of each fourth switching element Tr4 is connected to the fourth gate terminal conductor layer 88 by a wire 109 . A source electrode of each fourth switching element Tr4 is connected to the conductor layer 89 for the fourth source sense terminal by a wire 110. As shown in FIG.
The third element-bonding conductor layer 83 of the second assembly 80 is connected to the first element-bonding conductor layer 43 of the first assembly 40 by a first conductor-layer connecting member 111 . The first conductor layer connecting member 111 is made of an H-shaped conductive plate in a plan view. The first conductor layer connecting member 111 includes a pair of rectangular portions extending over the third element-bonding conductor layer 83 and the first element-bonding conductor layer 43, and a connecting portion connecting the central portions of the lengths of these rectangular portions. consists of One end and the other end of the pair of rectangular portions form comb-like terminals. Since the first element-bonding conductor layer 43 and the third element-bonding conductor layer 83 are connected by the first conductor-layer connecting member 111 made of a plate-like body, the inductance is reduced compared to the case of connecting them with a wire. can be achieved.

In addition, since the first conductor layer connecting member 111 has a comb-like terminal, for example, in bonding the first conductor layer connecting member 111 to the first element bonding conductor layer 43, an ultrasonic bonding head is used. is pressed against the comb-shaped terminal of the first conductor layer connecting member 111 on the +X direction side, the first conductor layer connecting member 111 can be easily ultrasonically bonded to the first element bonding conductor layer 43 .
The fourth element bonding conductor layer 86 of the second assembly 80 is connected to the second element bonding conductor layer 46 of the first assembly 40 by a second conductor layer connecting member 112 . The second conductor layer connecting member 112 is made of an H-shaped conductive plate in a plan view. The second conductor layer connecting member 112 includes a pair of rectangular portions extending over the fourth element bonding conductor layer 86 and the second element bonding conductor layer 46, and a connecting portion connecting the central portions of the lengths of these rectangular portions. consists of One end and the other end of the pair of rectangular portions form comb-like terminals. Since the second element-bonding conductor layer 46 and the fourth element-bonding conductor layer 86 are connected by the second conductor-layer connecting member 112 made of a plate-like body, the inductance can be reduced compared to the case of connecting them with a wire. can be planned.

Further, since the second conductor layer connecting member 112 has comb-shaped terminals, for example, when the second conductor layer connecting member 112 is joined to the second element bonding conductor layer 46, an ultrasonic bonding head is used. is pressed against the comb-shaped terminal of the second conductor layer connecting member 112 on the +X direction side, the second conductor layer connecting member 112 can be easily ultrasonically bonded to the second element bonding conductor layer 46 .
The source conductor layer 87 of the second assembly 80 is connected to the N-terminal conductor layer 47 of the first assembly 40 by a third conductor layer connecting member 113 . The third conductor layer connecting member 113 is made of an H-shaped conductive plate in a plan view. The third conductor layer connecting member 113 is composed of a pair of rectangular portions spanning the source conductor layer 87 and the N terminal conductor layer 47, and a connecting portion connecting the central portions of the lengths of these rectangular portions. . One end and the other end of the pair of rectangular portions form comb-like terminals. Since the N terminal conductor layer 47 and the source conductor layer 87 are connected by the plate-like third conductor layer connecting member 113, the inductance can be reduced as compared with the case of connecting them with a wire. Further, since the third conductor layer connecting member 113 has a comb-like terminal, for example, when the third conductor layer connecting member 113 is joined to the N terminal conductor layer 47, the head for ultrasonic bonding is set to the third terminal. The third conductor layer connection member 113 can be easily ultrasonically bonded to the N-terminal conductor layer 47 by pressing the third conductor layer connection member 113 against the comb-shaped terminal on the +X direction side.

The third gate terminal conductor layer 84 of the second assembly 80 is connected to the first gate terminal conductor layer 44 of the first assembly 40 via a wire 114 . The third source sense terminal conductor layer 85 of the second assembly 80 is connected to the first source sense terminal conductor layer 45 of the first assembly 40 via a wire 115 .
The fourth gate terminal conductor layer 88 of the second assembly 80 is connected to the second gate terminal conductor layer 48 of the first assembly 40 via a wire 116 . The fourth source sense terminal conductor layer 89 of the second assembly 80 is connected to the second source sense terminal conductor layer 49 of the first assembly 40 via a wire 117 .

When the first assembly 40 and the second assembly 80 are assembled on the heat sink 2, the heat sink 2 warps so that the central portion is convex as shown in the upper side of FIG. In this embodiment, after assembling the first assembly 40 and the second assembly 80 on the heat sink 2, the lower surface of the heat sink 2 (the surface in the -Z direction) becomes a flat surface as indicated by the chain double-dashed line 120. cutting. As a result, as shown in the lower side of FIG. 9, a heat sink 2 thinner than the heat sink 2 shown in the upper side of FIG. 9 is realized. In this embodiment, the thickness t of the peripheral portion of the heat sink 2 shown in the upper side of FIG. , for example, about 3.5 mm.

FIG. 10 is an electrical circuit diagram for explaining the electrical configuration of the power module 1. As shown in FIG. In FIG. 10, two output terminals OUT1 and OUT2 are shown as one output terminal OUT.
The plurality of first switching elements Tr1 and the plurality of first diode elements Di1 provided in the first assembly 40 and the plurality of third switching elements Tr3 and the plurality of third diode elements Di3 provided in the second assembly 80 are 1 is connected in parallel between the power supply terminal P and the output terminal OUT to form an upper arm circuit (high side circuit) 301 . The plurality of second switching elements Tr2 and the plurality of second diode elements Di2 provided in the first assembly 40 and the plurality of fourth switching elements Tr4 and the plurality of fourth diode elements Di4 provided in the second assembly 80 provide output It is connected between the terminal OUT and the second power supply terminal N to form a lower arm circuit (low side circuit) 302 .

The upper arm circuit 301 and the lower arm circuit 302 are connected in series between the first power terminal P and the second power terminal N, and output to the connection point 303 between the upper arm circuit 301 and the lower arm circuit 302. A terminal OUT is connected. A half-bridge circuit is thus configured. This half-bridge circuit can be used as a single-phase bridge circuit. Also, by connecting a plurality of (eg, three) half-bridge circuits (power modules 1) in parallel to a power source, a multi-phase (eg, three-phase) bridge circuit can be configured.

The first to fourth switching elements Tr1 to Tr4 are composed of N-channel DMOS (Double-Diffused Metal Oxide Semiconductor) field effect transistors in this embodiment. In particular, in this embodiment, the first to fourth switching elements Tr1 to Tr4 are high-speed switching MOSFETs (SiC-DMOS) composed of SiC semiconductor devices.

Also, the first to fourth diode elements Di1 to Di4 are constituted by Schottky barrier diodes (SBD) in this embodiment. Particularly, in this embodiment, the first to fourth diode elements Di1 to Di4 are composed of SiC semiconductor devices (SiC-SBD).
A first diode element Di1 is connected in parallel to each first switching element Tr1. A third diode element Di3 is connected in parallel to each third switching element Tr3. A drain of each first switching element Tr1 and each third switching element Tr3 and a cathode of each first diode element Di1 and each third diode element Di3 are connected to a first power supply terminal P.

Anodes of the plurality of first diode elements Di1 are connected to sources of the corresponding first switching elements Tr1, and sources of the first switching elements Tr1 are connected to the output terminal OUT. Similarly, the anodes of the plurality of third diode elements Di3 are connected to the sources of the corresponding third switching elements Tr3, and the sources of the third switching elements Tr3 are connected to the output terminal OUT.

Gates of the plurality of first switching elements Tr1 and the plurality of third switching elements Tr3 are connected to a first gate terminal G1. The sources of the plurality of first switching elements Tr1 and the plurality of third switching elements Tr3 are also connected to the first source sense terminal SS1. The drains of the plurality of first switching elements Tr1 and the plurality of third switching elements Tr3 are also connected to the drain sense terminal DS.

A second diode element Di2 is connected in parallel to each second switching element Tr2. A fourth diode element Di4 is connected in parallel to each fourth switching element Tr4. The drain of each second switching element Tr2 and each fourth switching element Tr4 and the cathode of each second diode element Di2 and each fourth diode element Di4 are connected to the output terminal OUT.

The anodes of the plurality of second diode elements Di2 are connected to the sources of the corresponding second switching elements Tr2, and the sources of the second switching elements Tr2 are connected to the second power supply terminal N. Similarly, the anodes of the plurality of fourth diode elements Di4 are connected to the sources of the corresponding fourth switching elements Tr4, and the sources of the fourth switching elements Tr4 are connected to the second power supply terminal N.

Gates of the plurality of second switching elements Tr2 and the plurality of fourth switching elements Tr4 are connected to a second gate terminal G2. The sources of the plurality of second switching elements Tr2 and the plurality of fourth switching elements Tr4 are also connected to the second source sense terminal SS2.
FIG. 11 shows an electric circuit when this power module 1 is used in an H bridge circuit. In the H bridge circuit, two power modules 1 are connected in parallel to a power supply 201 . One power module 1 is called a first power module 1A, and the other power module 1 is called a second power module 1B. In FIG. 11, for convenience of explanation, each of the plurality of first and third transistor elements Tr1 and Tr3 and the plurality of first and third diode elements Di1 and Di3 which constitute the upper arm circuit is replaced by one first transistor element. It is represented by a transistor element Tr1 and one first diode element Di1. Similarly, the plurality of second and fourth transistor elements Tr2 and Tr4 and the plurality of second and fourth diode elements Di2 and Di4, which constitute the lower arm circuit, are replaced by one second transistor element Tr2 and one second transistor element Tr2, respectively. It is represented by two diode elements Di2. An inductive load 202 such as a motor is connected between output terminals OUT of the two power modules 1A and 1B.

In such an H-bridge circuit, for example, the first transistor element Tr1 of the first power module 1A and the second transistor element Tr2 of the second power module 1B are rendered conductive. After that, these transistor elements Tr1 and Tr2 are turned off. Then, the second transistor element Tr2 of the first power module 1A and the first transistor element Tr1 of the second power module 1B are brought into a conductive state. After that, these transistor elements Tr1 and Tr2 are turned off. Then, the first transistor element Tr1 of the first power module 1A and the second transistor element Tr2 of the second power module 1B are brought into a conductive state. By repeating such operations, the load 202 is AC-driven.

In the transition period when the first switching element Tr1 in the first power module 1A is switched from the conductive state to the cutoff state and the second switching element Tr2 is switched from the cutoff state to the conductive state, the first power module 1A 11, current flows from the first power supply terminal P through the first switching element Tr1 to the output terminal OUT, and from the output terminal OUT through the second switching element Tr2 to the second power supply terminal N. current flows through Also, in the transition period when the second switching element Tr2 in the first power module 1A is switched from the conductive state to the cutoff state and the first switching element Tr1 is switched from the cutoff state to the conductive state, the first power In the module 1A, current flows from the first power terminal P through the first switching element Tr1 to the output terminal OUT, and current flows from the output terminal OUT to the second power terminal N through the second switching element Tr2.

Referring to FIGS. 7 and 8, during such a transitional period, the rising portion 31B of the first power supply terminal P of the first power module 1A is mainly in the -Z direction (from the side of the external wiring connection portion 31D to the internal wiring). current flows in the direction toward the connecting portion 31A). On the other hand, current mainly flows in the +Z direction (the direction from the internal wiring connection portion 32A side to the external wiring connection portion 32D side) in the rising portion 32B of the second power supply terminal N of the first power module 1A.

The rising portion 31B of the first power supply terminal P through which current flows in the -Z direction and the rising portion 32B of the second power supply terminal N through which current flows in the +Z direction are opposed to each other and are close to each other. Thereby, the self-inductance of the first power supply terminal P and the self-inductance of the second power supply terminal N are at least partially canceled by the mutual inductance therebetween. Thereby, the inductance of the power module 1 can be reduced.

The height H (see FIG. 8) of the rising portion 31B of the first power terminal P and the rising portion 32B of the second power terminal N is preferably 5 mm or more, and the width (length in the X direction) W (see FIG. 7) ) is preferably 14 mm or more, and the distance d (see FIG. 8) therebetween is preferably 2 mm or less. In this embodiment H=5.5 mm, W=16.75 mm and d=1 mm.

In this embodiment, the source electrodes of the switching elements Tr1, Tr2, Tr3, and Tr4 and the anode electrodes of the diode elements Di1, Di2, Di3, and Di4 are connected by plate-like connection metal members 55, 65, 95, 95, 95, 95, 95, 95, 95, 95, 95, 95, 95, 95, 95, 95, 95, 95, 95, 95. 105 are used to electrically connect to conductor layers 46, 47, 86, 87. FIG. Thereby, the thermal resistance of the power module 1 can be reduced.

FIG. 12 shows the thermal resistance of the power module when wires are used instead of the flat connecting metal members 55, 65, 95, 105 when the flat connecting metal members 55, 65, 95, 105 are used. 1 is a graph showing the ratio of thermal resistance of the power module in the form of a thermal resistance ratio. In FIG. 12, the horizontal axis represents the thickness (length in the Z direction) of the connecting metal members 55, 65, 95 and 105, and the vertical axis represents the thermal resistance ratio.

It can be seen from FIG. 12 that the thermal resistance of the power module 1 decreases as the thickness of the connecting metal members 55, 65, 95, 105 increases. This is because when the thickness of the connection metal members 55, 65, 95, and 105 is increased, the heat dissipation effect of the connection metal members 55, 65, 95, and 105 against the heat generated by the switching elements Tr1 to Tr4 and the diode elements Di1 to Di4. is higher. However, it can be seen that even if the thickness of the connection metal members 55, 65, 95, 105 exceeds 2 mm, the thermal resistance of the power module 1 does not decrease so much. Therefore, the thickness of the connection metal members 55, 65, 95, 105 is preferably 0.8 mm or more and 2.0 mm or less. In this embodiment, the thickness of the connection metal members 55, 65, 95, 105 is 1.0 mm, and the power module 1 is more compact than when wires are used instead of the connection metal members 55, 65, 95, 105. thermal resistance can be reduced by about 15%.

In this embodiment, as described above, the thickness of the heat sink 2 is reduced by grinding the back surface of the heat sink 2 . Thereby, the thermal resistance of the power module 1 can be reduced.
FIG. 13 is a graph showing, as a thermal resistance ratio, the ratio of the thermal resistance of the power module when the back surface of the heat sink 2 is ground to the thermal resistance of the power module when the back surface of the heat sink 2 is not ground. In FIG. 13, the horizontal axis represents the thickness (length in the Z direction) of the peripheral portion of the heat sink 2, and the vertical axis represents the thermal resistance ratio. In FIG. 13, the thickness of the heat sink 2 is 4 mm when the back surface of the heat sink 2 is not ground.

As can be seen from FIG. 13, the thinner the heat sink 2 is ground, the smaller the thermal resistance of the power module 1 becomes. This is because the heat generated by the switching elements Tr1 to Tr4 and the diode elements Di1 to Di4 is transferred to the back surface of the heat sink 2 (surface on the -Z direction side) when the thickness of the heat sink 2 is reduced. This is because it is easily transmitted to the means. Therefore, it is preferable to reduce the thickness of the heat sink 2 by grinding the back surface of the heat sink 2 . In this embodiment, the thickness of the peripheral portion of the heat sink 2 is 3.5 mm, and the thermal resistance of the power module 1 can be reduced by approximately 2% compared to the case where the back surface of the heat sink 2 is not ground.

In this embodiment, the thickness of the solder layers 53, 61, 91, 101 for bonding the switching elements Tr1, Tr2, Tr3, Tr4 to the element bonding conductor layers 43, 46, 83, 86 is set to a general thickness of Thinner than thick. Thereby, the thermal resistance of the power module 1 can be reduced.
FIG. 14 shows the thermal resistance of the power module when the thicknesses of the solder layers 53, 61, 91, and 101 are the reference values when the thicknesses of the solder layers 53, 61, 91, and 101 are thinner than the reference values. 2 is a graph showing the ratio of thermal resistance of the power module in the form of a thermal resistance ratio. In FIG. 14, the horizontal axis represents the thickness of the solder layers 53, 61, 91 and 101, and the vertical axis represents the thermal resistance ratio. In FIG. 14, the reference value for the thickness of the solder layers 53, 61, 91 and 101 is 0.12 mm.

As can be seen from FIG. 14, the thinner the solder layers 53, 61, 91 and 101 are, the smaller the thermal resistance of the power module 1 is. This is because the heat generated by the switching elements Tr1 to Tr4 is more easily transmitted to the heat sink 2 when the solder layers 53, 61, 91 and 101 are made thinner. Therefore, it is preferable to set the thickness of the solder layers 53, 61, 91, 101 to 0.08 mm or more and 0.10 mm or less. In this embodiment, the thickness of the solder layers 53, 61, 91, 101 is 0.08 mm, and the thickness of the power module 1 is reduced compared to the case where the thickness of the solder layers 53, 61, 91, 101 is 0.12 mm. can be reduced by about 2%.

Although the embodiments of the present invention have been described above, the present invention can also be implemented in other forms. For example, in the above-described embodiments, MOS field effect transistors made of SiC semiconductor devices have been described as examples of switching elements, but other forms of switching elements such as IGBTs (Insulated Gate Bipolar Transistors) may be applied. . Also, in the above-described embodiments, a configuration including switching elements and diode elements has been described, but the present invention can also be applied to semiconductor devices that do not include diode elements. Also, the semiconductor device does not necessarily constitute a power module.

In addition, various design changes can be made within the scope of the matters described in the claims.

1 semiconductor module 2 heat sinks 21 to 24 terminal block 31A internal wiring connection portion 31Aa base portion 31Ab comb-like terminal 31B rising portion 31C inclined portion 31D external wiring connecting portion 32A internal wiring connecting portion 32Aa base portion 32Ab comb-like terminal 32B rising portion 32C Inclined portion 32D External wiring connection portion 40 First assembly 41 First insulating substrate 42 First bonding conductor layer 43 First element bonding conductor layer 46 Second element bonding conductor layer 47 N terminal conductor layer 55 First connection metal Member 65 Second connection metal member 80 Second assembly 81 Second insulating substrate 82 Second bonding conductor layer 83 Third element bonding conductor layer 84 Third gate terminal conductor layer 85 Third source/sense terminal conductor layer 86 Four-element junction conductor layer 87 Source conductor layer 95 Third connection metal member 105 Fourth connection metal member P First power supply terminal N Second power supply terminal OUT1 First output terminal OUT2 Second output terminals Tr1 to Tr4 Switching elements Di1 to Di4 diode element

Claims (15)

a first power terminal and a second power terminal arranged adjacent to each other in a predetermined direction in plan view;
a circuit element electrically connected between the first power terminal and the second power terminal;
The first power supply terminal connects the first internal wiring connection part and the first external wiring connection part, and the edges of the first internal wiring connection part and the first external wiring connection part on the side of the second power supply terminal. and a first connecting portion to
The second power terminal connects the second internal wiring connection portion and the second external wiring connection portion, and the second internal wiring connection portion and the second external wiring connection portion, and is adjacent to the first connection portion. a second joint positioned at the
The first connecting portion and the second connecting portion each have a portion embedded in the terminal block,
The distance between the portion of the first connecting portion embedded in the terminal block and the portion of the second connecting portion embedded in the terminal block is the distance between the first external wiring connection portion and the second external wiring connection portion. A semiconductor device that is smaller than the minimum distance between wiring connection parts. 2. The semiconductor device according to claim 1, wherein said circuit element has first and second switching elements connected in cascade, and an output is taken out from a connecting portion of said first and said second switching elements. The first internal wiring connection portion and the first external wiring connection portion are arranged to face each other with a predetermined gap therebetween,
3. The semiconductor device according to claim 1, wherein said second internal wiring connection portion and said second external wiring connection portion are arranged opposite to each other with a predetermined gap therebetween. 3. The semiconductor device according to claim 1, wherein said first internal wiring connection portion, said second internal wiring connection portion and said circuit element are sealed in a case. 3. The semiconductor device according to claim 2, wherein said first and second switching elements each include diodes connected in parallel in opposite directions. 6. The semiconductor device according to claim 2, wherein said first and second switching elements are SiC MOSFETs or IGBTs. The first connecting portion and the second connecting portion have opposing portions that extend in the vertical direction and face each other at a predetermined interval, and the interval between the opposing portions gradually increases upward from the opposing portions. 3. A semiconductor device according to claim 1 or 2, each comprising an elongated sloping portion. 8. The semiconductor device according to claim 7, wherein a distance between said facing portion of said first connecting portion and said facing portion of said second connecting portion is 2 mm or less. The first connecting portion and the second connecting portion each include opposing portions that extend in the vertical direction and face each other with a predetermined spacing,
The distance between the facing portion of the first connecting portion and the facing portion of the second connecting portion is the minimum distance between the output terminal to which the output is connected and the first power terminal or the second power terminal. 3. The semiconductor device according to claim 2, which is smaller than the spacing. including a circuit board on which the circuit element is mounted;
The circuit board is substantially rectangular in plan view,
3. The circuit board according to claim 1, wherein said first internal wiring connection portion of said first power supply terminal and said second internal wiring connection portion of said second power supply terminal are attached to longitudinal ends of said circuit board. The semiconductor device described. The first switching element has a plurality of switching elements connected in parallel,
3. The semiconductor device according to claim 2, wherein said second switching element has a plurality of switching elements connected in parallel. 3. The semiconductor device according to claim 1, wherein a convex portion is formed in a region between said first external wiring connection portion and said second external wiring connection portion on the surface of said terminal block. 13. The semiconductor device according to claim 12, wherein a plurality of grooves are formed on the surface of said protrusion. The first connecting portion and the second connecting portion each include opposing portions that extend in the vertical direction and face each other with a predetermined spacing,
The projection and the groove are in a direction orthogonal to the direction in which the facing portion of the first connecting portion and the facing portion of the second connecting portion face each other, and along the surface of the terminal block. 14. The semiconductor device of claim 13, extending into the 15. The length of the protrusion and the groove according to claim 14, wherein the length of the protrusion and the groove in the facing portion of the first connection portion and the second connection portion is greater than the length of the direction in which the protrusion and the groove extend. semiconductor equipment.

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