JP7050732B2 - Semiconductor device - Google Patents

Description

The present invention relates to semiconductor devices such as power modules.

A power module is a device that connects a pair of switching elements in series to a power supply and obtains an output from between the pair of switching elements. Such a power module is used, for example, in an inverter circuit constituting a drive circuit for driving an electric motor. The electric motor is used as a power source for, for example, an electric vehicle (including a hybrid vehicle), a train, an industrial robot, and the like. Power modules are also applied to inverter circuits that convert the power generated by solar cells, wind power generators and other power generators (especially private power generators) to match the power of commercial power sources.

Conventionally, a device using a Si (silicon) semiconductor has been used as a switching element of a power module. However, the loss in the device at the time of power conversion has become a problem, and it has become difficult to further improve the efficiency of the device using the Si material.
Therefore, a power module using a power device using a SiC (silicon carbide) semiconductor as a switching element has been proposed. Since the SiC power device has a high switching speed, high-speed on / off operation is possible. Therefore, since the current is rapidly reduced when the power is off, the switching loss can be reduced.

Japanese Patent Application Laid-Open No. 2003-133515 Japanese Unexamined Patent Publication No. 2004-95769

However, high-speed switching by a SiC power device introduces a new problem of an increase in surge voltage during switching.
As shown in the following equation (A), the surge voltage V is the product of the self-inductance L of the wiring inside the power module and the derivative (di / dt) (current change rate per hour) of the current i with respect to time t. Given.

V = L ・ (di / dt) …… (A)
The faster the switching speed, the larger the rate of change (di / dt) of the current i, and therefore the larger the surge voltage V. If a voltage exceeding the withstand voltage is applied to the device due to this surge voltage, the device may be destroyed. In addition, if the surge voltage is large, there is a concern that EMI (electromagnetic interference) noise will increase and reliability will decrease.

Therefore, it is necessary to reduce the self-inductance L of the internal wiring of the power module in order to reduce the surge voltage while applying a high-speed switching element such as a SiC device. This problem is common not only to power modules but also to semiconductor devices having switching elements. Of course, reduction of surge voltage is also an important issue in semiconductor devices having switching elements using Si semiconductors.

An object of the present invention is to provide a semiconductor device capable of realizing a power module having a small self-inductance of internal wiring.

In one embodiment of the present invention, in a plan view, between the first power supply terminal and the second power supply terminal arranged adjacent to each other in a predetermined direction, and between the first power supply terminal and the second power supply terminal. The first power supply terminal includes a circuit element electrically connected, and the first power supply terminal is a flat plate-shaped first internal wiring connection portion and a first external wiring arranged so as to face each other at intervals in the vertical direction along a plan view direction. The second power supply terminal includes a connection portion, a first connection portion for connecting the edge portions on the second power supply terminal side of the first internal wiring connection portion and the first external wiring connection portion, and the second power supply terminal is a second. A second connecting portion that connects the internal wiring connection portion and the second external wiring connection portion with the second internal wiring connection portion and the second external wiring connection portion and is arranged adjacent to the first connection portion. Provided is a semiconductor device including the first connecting portion and the second connecting portion facing each other, and at least a part of the first connecting portion and at least a part of the second connecting portion extending in the vertical direction. ..

Since the first connecting portion and the second connecting portion face each other, it is possible to cancel the self-inductance of the first power supply terminal and the self-inductance of the second power supply terminal. This makes it possible to provide a semiconductor device having a low self-inductance of the internal wiring.
In one embodiment of the present invention, the first connecting portion and the second connecting portion each include plate-shaped facing portions facing each other at predetermined intervals.

In one embodiment of the present invention, the first internal wiring connection portion and the first external wiring connection portion are arranged to face each other with a predetermined interval, and the second internal wiring connection portion and the second external wiring portion are arranged so as to face each other. The wiring connection portions are arranged so as to face each other with a predetermined interval.
In one embodiment of the present invention, the first internal wiring connection portion, the second internal wiring connection portion, and the circuit element are sealed in a case.

In one embodiment of the invention, the circuit element has first and second switching elements that are longitudinally connected, and the output is taken out from the connection portion of the first and second switching elements.
In one embodiment of the invention, the first and second switching elements each include diodes connected in parallel in opposite directions.

In one embodiment of the invention, the first and second switching elements consist of a SiC MOSFET or an IGBT.
In one embodiment of the present invention, the distance between the first connecting portion and the second connecting portion is 2 mm or less.
In one embodiment of the present invention, the circuit board includes the circuit board to which the circuit element is attached, the circuit board is substantially rectangular in plan view, and the first power supply terminal and the second power supply terminal are in the longitudinal direction of the circuit board. It is attached to the end of.

In one embodiment of the present invention, the first switching element has a plurality of switching elements connected in parallel, and the second switching element has a plurality of switching elements connected in parallel.
In one embodiment of the present invention, the first internal wiring connection portion and the second internal wiring connection portion are connected to the circuit board by solder.

In one embodiment of the present invention, the distance between the first connecting portion and the second connecting portion is between the output terminal to which the output is connected and the first power supply terminal or the second power supply terminal. Shorter than the distance.

FIG. 1 is a schematic plan view showing an internal structure of a power module according to an embodiment of the present invention. FIG. 2 is a right side view of FIG. FIG. 3 is a rear view of FIG. 1. FIG. 4 is a schematic cross-sectional view taken along line IV-IV of FIG. FIG. 5 is a schematic cross-sectional view taken along the line VV of FIG. FIG. 6 is a schematic enlarged cross-sectional view taken along the line VI-VI of FIG. FIG. 7 is a schematic perspective view for explaining the configuration of the power module circuit housed in the case. FIG. 8 is a schematic enlarged cross-sectional view taken along the line VIII-VIII of FIG. FIG. 9 is an explanatory diagram illustrating that the thickness of the heat sink is reduced by grinding the back surface of the heat sink. FIG. 10 is an electric circuit diagram for explaining the electrical configuration of the power module. FIG. 11 is an electric circuit diagram showing an electric circuit when the power module is used for an H-bridge circuit. FIG. 12 shows the ratio of the thermal resistance of the power module when the flat plate-shaped connecting metal member is used to the thermal resistance of the power module when the wire is used instead of the flat plate-shaped connecting metal member as the thermal resistance ratio. It is a graph. FIG. 13 is a graph showing the ratio of the thermal resistance of the power module when the back surface of the heat radiating plate is ground to the thermal resistance of the power module when the back surface of the heat radiating plate is not ground as the thermal resistance ratio. FIG. 14 shows the power module when the thickness of the solder layer is made thinner than the reference value with respect to the thermal resistance of the power module when the thickness of the solder layer for joining the switching element to the conductor layer is the reference value. It is a graph which shows the thermal resistance ratio as a thermal resistance ratio.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic plan view showing an internal structure of a power module according to an embodiment of the present invention, showing a state in which the top plate is removed. FIG. 2 is a right side view of FIG. FIG. 3 is a rear view of FIG. 1. FIG. 4 is a schematic cross-sectional view taken along line IV-IV of FIG. FIG. 5 is a schematic cross-sectional view taken along the line VV of FIG. FIG. 6 is a schematic enlarged cross-sectional view taken along the line VI-VI of FIG. FIG. 7 is a schematic perspective view for explaining the configuration of the power module circuit housed in the case. FIG. 8 is a schematic enlarged cross-sectional view taken along the line VIII-VIII of FIG. In FIG. 7, for the sake of clarification, only a part (only one set of each) of the wires 59, 60; 69, 70; 99, 100; 109, 110 is shown.

The power module 1 includes a heat sink 2, a case 3, and a plurality of terminals assembled to the case 3. The plurality of terminals include a first power supply terminal (positive electrode side power supply terminal in this example) P, a second power supply terminal (negative electrode side power supply terminal in this example) N, and a first output terminal OUT1 and a second output terminal OUT2. Includes. Further, the plurality of terminals include a drain sense terminal DS, a first source sense terminal SS1, a first gate terminal G1, first and second thermistor terminals T1 and T2, a second source sense terminal SS2, and a second. It includes a gate terminal G2. When the first output terminal OUT1 and the second output terminal OUT2 are collectively referred to, they are referred to as "output terminal OUT".

For convenience of explanation, the + X direction, the −X direction, the + Y direction and the −Y direction shown in FIG. 1 and the + Z direction and the −Z direction shown in FIG. 4 may be used below. The + X direction and the −X direction are two directions along the long side of the case 3 (heat sink 2) having a substantially rectangular shape in a plan view, and when these are collectively referred to, they are simply referred to as “X direction”. The + Y direction and the −Y direction are two directions along the short side of the case 3, and when these are collectively referred to, they are simply referred to as “Y direction”. The + Z direction and the −Z direction are two directions along the normal line of the heat sink 2, and when these are collectively referred to, they are simply referred to as “Z direction”. When the heat dissipation plate 2 is placed on a horizontal plane, the X and Y directions are two horizontal directions (first horizontal direction and second horizontal direction) along two horizontal straight lines (X-axis and Y-axis) orthogonal to each other. The direction is the vertical direction (height direction) along the vertical straight line (Z axis).

The heat radiating plate 2 is a plate-like body having a rectangular shape in a plan view and having a uniform thickness, and is made of a material having high thermal conductivity. More specifically, the heat sink 2 may be a copper plate made of copper. This copper plate may have a nickel plating layer formed on the surface thereof. A heat sink or other cooling means is attached to the surface of the heat radiating plate 2 on the −Z direction side, if necessary.
The case 3 is formed in a substantially rectangular parallelepiped shape and is made of a resin material. In particular, it is preferable to use a heat-resistant resin such as PPS (polyphenylene sulfide). The case 3 has a rectangular shape having substantially the same size as the heat sink 2 in a plan view, and is fixed to a frame portion 4 fixed to one surface (+ Z direction side surface) of the heat sink 2 and to the frame portion 4. It is equipped with a top plate (not shown). The top plate faces one surface of the heat sink 2 that closes one side (+ Z direction side) of the frame portion 4 and closes the other side (−Z direction side) of the frame portion 4. As a result, the circuit accommodation space is partitioned inside the case 3 by the heat radiating plate 2, the frame portion 4, and the top plate. In this embodiment, the frame portion 4 and the plurality of terminals are made by simultaneous molding.

The frame portion 4 includes a pair of side walls 6 and 7 and a pair of end walls 8 and 9 connecting both ends of the pair of side walls 6 and 7, respectively. The four corners on the surface of the frame 4 on the + Z direction are formed with recesses 10 that are open outward. The wall of each recess 10 on the opposite side of the outward opening is curved so as to project inward. The bottom wall of the recess 10 is formed with a mounting through hole 11 that penetrates the bottom wall. The tubular metal member 12 is fixed in the mounting through hole 11 in a fitted state. The heat radiating plate 2 is formed with a mounting through hole 13 (see FIG. 7) that communicates with each mounting through hole 11. The power module 1 is fixed at a predetermined fixed position to be mounted by bolts (not shown) through which the mounting through holes 11 and 13 of the case 3 and the heat sink 2 are inserted. Cooling means such as the above-mentioned heat sink may be attached by utilizing these attachment through holes 11 and 13.

On the outer surface of the end wall 9, a rectangular terminal block 14 for a power supply terminal, which is long in the Y direction in a plan view, is formed. The power terminal block 14 is integrally formed with the end wall 9. A convex portion 15 extending in the X direction is formed at the central portion in the length direction of the surface (the surface on the + Z direction side) of the end wall 9 and the terminal block 14 for the power supply terminal. A plurality of grooves 16 extending in the X direction are formed on the surface of the convex portion 15. The portion of the terminal block 14 for the power supply terminal on the + Y direction side from the center in the length direction is the terminal block 21 for the first power supply terminal P. The portion of the terminal block 14 for the power supply terminal on the side in the −Y direction from the center in the length direction is the terminal block 22 for the second power supply terminal N.

On the outer surface of the end wall 8, a rectangular terminal block 17 for an output terminal, which is long in the Y direction in a plan view, is formed. The output terminal block 17 is integrally formed with the end wall 8. A convex portion 18 extending in the X direction is formed at the central portion in the length direction of the surface (the surface on the + Z direction side) of the end wall 8 and the terminal block 17 for the output terminal. A plurality of grooves 19 extending in the X direction are formed on the surface of the convex portion 18. The portion of the terminal block 17 for the output terminal on the + Y direction side from the center in the length direction is the terminal block 23 for the first output terminal OUT1. The portion of the terminal block 17 for the output terminal on the side in the −Y direction from the center in the length direction is the terminal block 24 for the second output terminal OUT2.

A first power supply terminal P is arranged on the surface of the terminal block 21 (the surface on the + Z direction side). A second power supply terminal N is arranged on the surface of the terminal block 22 (the surface on the + Z direction side). The first output terminal OUT1 is arranged on the surface of the terminal block 23 (the surface on the + Z direction side). A second output terminal OUT2 is arranged on the surface of the terminal block 24 (the surface on the + Z direction side).
The first power supply terminal P, the second power supply terminal N, the first output terminal OUT1 and the second output terminal OUT2 each have a predetermined shape of a conductive plate-like body (for example, a copper plate or a copper plate plated with nickel). It was cut out and bent, and is electrically connected to the circuit inside the case 3. The tips of the first power supply terminal P, the second power supply terminal N, the first output terminal OUT1 and the second output terminal OUT2 are drawn out on the terminal blocks 21, 22, 23, 24, respectively. The tips of the first power supply terminal P, the second power supply terminal N, the first output terminal OUT1 and the second output terminal OUT2 are formed along the surfaces of the terminal blocks 21, 22, 23, 24, respectively.

A drain sense terminal DS, a first source sense terminal SS1, a first gate terminal G1, and first and second thermistor terminals T1 and T2 are attached to one side wall 7. The tip portions of these terminals DS, SS1, G1, T1, and T2 project from the surface of the side wall 7 (the surface on the + Z direction side) to the outside (+ Z direction) of the case 3. The drain sense terminal DS is arranged near the end on the −X direction side of the side wall 7. The first and second thermistor terminals T1 and T2 are arranged at intervals in the X direction near the + X direction end of the side wall 7. The first source sense terminal SS1 and the first gate terminal G1 are arranged at intervals in the X direction between the −X direction side end of the side wall 7 and the center in the length direction (X direction).

A second gate terminal G2 and a second source sense terminal SS2 are attached to the other side wall 6. The tip portions of these terminals G2 and SS2 project from the surface of the side wall 6 (the surface on the + Z direction side) to the outside (+ Z direction) of the case 3. The second gate terminal G2 and the second source sense terminal SS2 are arranged at intervals in the X direction between the center in the length direction (X direction) of the side wall 6 and the side end in the + X direction. The drain sense terminals DS, thermistor terminals T1 and T2, source sense terminals SS1 and SS2, and gate terminals G1 and G2 are each made of a metal rod having a rectangular cross section (for example, a copper rod or a copper rod plated with nickel). It was created by bending it, and is electrically connected to the circuit inside the case 3.

With reference to FIGS. 1, 6, 7, and 8, the first power supply terminal P is coupled to the internal wiring connection portion 31A, the rising portion 31B coupled to the internal wiring connecting portion 31A, and the rising portion 31B. It has an inclined portion 31C and an external wiring connecting portion 31D coupled to the inclined portion 31C. The internal wiring connection portion 31A has a substantially rectangular base portion 31Aa whose four sides are parallel to the four sides of the heat dissipation plate 2 in a plan view, and a comb-shaped terminal 31Ab projecting from the −X direction side end of the base portion 31Aa in the −X direction. And have. The base portion 31Aa is formed of a plate-like body along the XY plane, and is formed in a shape in which the corner portions on the + X direction side and the + Y direction side of the four corner portions are cut off. The comb-shaped terminal 31Ab has three terminals arranged side by side in the Y direction. These terminals have a crank shape that extends in the −X direction from the −X direction side end of the base 31Aa, then bends in the −Z direction, and then extends in the −X direction again. Most of the base 31Aa is embedded inside the end wall 9 and the terminal block 21.

The rising portion 31B rises in the + Z direction from the −Y direction side edge portion of the base portion 31Aa of the internal wiring connection portion 31A. The rising portion 31B is formed of a plate-like body along the XZ plane, and is formed to have substantially the same width as the length of the −Y direction side edge portion of the base portion 31Aa. The rising portion 31B is embedded inside the end wall 9 and the terminal block 21. The inclined portion 31C is connected to the + Z direction side edge portion of the rising portion 31B, and extends diagonally in the + Z direction toward the + Y direction. The inclined portion 31C is made of a plate-like body extending in the diagonal direction, and is formed to have substantially the same width as the rising portion 31B. The inclined portion 31C is embedded inside the end wall 9 and the terminal block 21.

The external wiring connection portion 31D is coupled to the + Z direction side edge portion of the inclined portion 31C and extends in the + Y direction. The external wiring connection portion 31D is formed of a plate-like body along the XY plane, and is formed to have substantially the same width as the inclined portion 31C. The external wiring connection portion 31D is arranged along the surface of the terminal block 21. An insertion hole 31Da for connecting an external wiring is formed in a substantially central portion of the external wiring connection portion 31D. A nut 35 (see FIG. 6) is fixed to the surface of the external wiring connection portion 31D on the −Z direction side so that the screw holes are aligned with the insertion holes 31Da. The nut 35 is embedded inside the terminal block 21.

The second power supply terminal N has a shape that is plane-symmetrical with the first power supply terminal P with respect to the XZ plane passing through the center of the length of the end wall 9. The second power supply terminal N has an internal wiring connection portion 32A, a rising portion 32B coupled to the internal wiring connection portion 32A, an inclined portion 32C coupled to the rising portion 32B, and an external wiring connection coupled to the inclined portion 32C. It has a portion 32D. The internal wiring connection portion 32A has a substantially rectangular base portion 32Aa whose four sides are parallel to the four sides of the heat dissipation plate 2 in a plan view, and a comb-shaped terminal 32Ab projecting from the −X direction side end of the base portion 32Aa in the −X direction. And have. The base portion 32Aa is formed of a plate-like body along the XY plane, and is formed in a shape in which the corner portion on the + X direction side and the −Y direction side is cut off from the four corner portions. The comb-shaped terminal 32Ab has three terminals arranged side by side in the Y direction. These terminals have a crank shape that extends in the −X direction from the −X direction side end of the base 32Aa, then bends in the −Z direction, and then extends in the −X direction again. Most of the base 32Aa is embedded inside the end wall 9 and the terminal block 22.

The rising portion 32B rises in the + Z direction from the + Y direction side edge portion of the base portion 32Aa of the internal wiring connection portion 32A. The rising portion 32B is formed of a plate-like body along the XZ plane, and is formed to have substantially the same width as the length of the + Y direction side edge portion of the base portion 32Aa. The rising portion 32B is embedded inside the end wall 9 and the terminal block 22. The inclined portion 32C is connected to the + Z direction side edge portion of the rising portion 32B, and extends diagonally in the + Z direction toward the −Y direction. The inclined portion 32C is made of a plate-like body extending in the diagonal direction, and is formed to have substantially the same width as the rising portion 32B. The inclined portion 32C is embedded inside the end wall 9 and the terminal block 22.

The external wiring connection portion 32D is coupled to the + Z direction side edge portion of the inclined portion 32C and extends in the −Y direction. The external wiring connection portion 32D is formed of a plate-like body along the XY plane, and is formed to have substantially the same width as the inclined portion 32C. The external wiring connection portion 32D is arranged along the surface of the terminal block 22. An insertion hole 32Da for connecting an external wiring is formed in a substantially central portion of the external wiring connection portion 32D. A nut 36 (see FIG. 6) is fixed to the surface of the external wiring connection portion 32D on the −Z direction side so that the screw holes are aligned with the insertion holes 32Da. The nut 36 is embedded inside the terminal block 22.

The rising portion 31B of the first power supply terminal P and the rising portion 32B of the second power supply terminal N are arranged so as to face each other with a predetermined interval, and constitute the "plate-shaped facing portion" of the present invention. There is. The rising portion 31B and the inclined portion 31C of the first power supply terminal P constitute the "first connecting portion" of the present invention. The rising portion 32B and the inclined portion 32C of the second power supply terminal N constitute the "second connecting portion" of the present invention.

The first output terminal OUT1 has a shape that is plane-symmetrical with the first power supply terminal P with respect to the YZ plane passing through the center of the length of the side wall 7. The first output terminal OUT1 has an internal wiring connection portion 33A, a rising portion 33B coupled to the internal wiring connecting portion 33A, an inclined portion 33C coupled to the rising portion 33B, and an external wiring connection coupled to the inclined portion 33C. It has a portion 33D. The internal wiring connection portion 33A has a substantially rectangular base portion 33Aa whose four sides are parallel to the four sides of the heat dissipation plate 2 in a plan view, and a comb-teeth-shaped terminal 33Ab protruding in the + X direction from the + X direction side end of the base portion 33Aa. Have. The base portion 33Aa is formed of a plate-like body along the XY plane, and is formed in a shape in which the corner portions on the −X direction side and the + Y direction side of the four corner portions are cut off. The comb-shaped terminal 33Ab has three terminals arranged side by side in the Y direction. These terminals have a crank shape that extends in the + X direction from the + X direction side end of the base 33Aa, bends in the −Z direction, and then extends in the + X direction again. Most of the base 33Aa is embedded inside the end wall 8 and the terminal block 23.

The rising portion 33B rises in the + Z direction from the −Y direction side edge portion of the base portion 33Aa of the internal wiring connection portion 33A. The rising portion 33B is formed of a plate-like body along the XZ plane, and is formed to have substantially the same width as the length of the −Y direction side edge portion of the base portion 33Aa. The rising portion 33B is embedded inside the end wall 8 and the terminal block 23. The inclined portion 33C is connected to the + Z direction side edge portion of the rising portion 33B, and extends diagonally in the + Z direction toward the + Y direction. The inclined portion 33C is made of a plate-like body extending in the diagonal direction, and is formed to have substantially the same width as the rising portion 33B. The inclined portion 33C is embedded inside the end wall 8 and the terminal block 23.

The external wiring connection portion 33D is coupled to the + Z direction side edge portion of the inclined portion 33C and extends in the + Y direction. The external wiring connection portion 33D is formed of a plate-like body along the XY plane, and is formed to have substantially the same width as the inclined portion 33C. The external wiring connection portion 33D is arranged along the surface of the terminal block 23. An insertion hole 33Da for connecting an external wiring is formed in a substantially central portion of the external wiring connection portion 33D. A nut (not shown) is fixed to the surface of the external wiring connection portion 33D on the −Z direction side so that the screw holes are aligned with the insertion holes 33Da. This nut is embedded inside the terminal block 23.

The second output terminal OUT2 has a shape that is plane-symmetrical with the first output terminal OUT1 with respect to the XZ plane passing through the center of the length of the end wall 8. The second output terminal OUT2 has an internal wiring connection portion 34A, a rising portion 34B coupled to the internal wiring connection portion 34A, an inclined portion 34C coupled to the rising portion 34B, and an external wiring connection coupled to the inclined portion 34C. It has a portion 34D. The internal wiring connection portion 34A has a substantially rectangular base portion 34Aa whose four sides are parallel to the four sides of the heat dissipation plate 2 in a plan view, and a comb-teeth-shaped terminal 34Ab protruding in the + X direction from the + X direction side end of the base portion 34Aa. Have. The base portion 34Aa is formed of a plate-like body along the XY plane, and is formed in a shape in which the corner portions on the −X direction side and the −Y direction side of the four corner portions are cut off. The comb-shaped terminal 34Ab has three terminals arranged side by side in the Y direction. These terminals have a crank shape that extends in the + X direction from the + X direction side end of the base 34Aa, bends in the −Z direction, and then extends in the + X direction again. Most of the base 34Aa is embedded inside the end wall 8 and the terminal block 24.

The rising portion 34B rises in the + Z direction from the + Y direction side edge portion of the base portion 34Aa of the internal wiring connection portion 34A. The rising portion 34B is formed of a plate-like body along the XZ plane, and is formed to have substantially the same width as the length of the + Y direction side edge portion of the base portion 34Aa. The rising portion 34B is embedded inside the end wall 8 and the terminal block 24. The inclined portion 34C is connected to the + Z direction side edge portion of the rising portion 34B, and extends diagonally in the + Z direction toward the −Y direction. The inclined portion 34C is made of a plate-like body extending in the diagonal direction, and is formed to have substantially the same width as the rising portion 34B. The inclined portion 34C is embedded inside the end wall 8 and the terminal block 24.

The external wiring connection portion 34D is coupled to the + Z direction side edge portion of the inclined portion 34C and extends in the −Y direction. The external wiring connection portion 34D is formed of a plate-like body along the XY plane, and is formed to have substantially the same width as the inclined portion 34C. The external wiring connection portion 34D is arranged along the surface of the terminal block 24. An insertion hole 34Da for connecting an external wiring is formed in a substantially central portion of the external wiring connection portion 34D. A nut (not shown) is fixed to the surface of the external wiring connection portion 34D on the −Z direction side so that the screw holes are aligned with the insertion holes 34Da. This nut is embedded inside the terminal block 24.

The drain sense terminal DS has a crank shape when viewed from the X direction, and an intermediate portion thereof is embedded in the side wall 7. The base end portion of the drain sense terminal DS is arranged in the case 3. The tip of the drain sense terminal DS projects in the + Z direction from the surface of the side wall 7.
The first source sense terminal SS1 has a crank shape when viewed from the X direction, and an intermediate portion thereof is embedded in the side wall 7. The base end portion of the first source sense terminal SS1 is arranged in the case 3. The tip of the first source sense terminal SS1 projects in the + Z direction from the surface of the side wall 7.

The first gate terminal G1 has a crank shape when viewed from the X direction, and an intermediate portion thereof is embedded in the side wall 7. The base end portion of the first gate terminal G1 is arranged in the case 3. The tip of the first gate terminal G1 protrudes from the surface of the side wall 7 in the + Z direction.
The thermistor terminals T1 and T2 are crank-shaped when viewed from the X direction, and their intermediate portions are embedded in the side wall 7. The base ends of the thermistor terminals T1 and T2 are arranged in the case 3. The tip portions of the thermistor terminals T1 and T2 project in the + Z direction from the surface of the side wall 7.

The second source sense terminal SS2 has a crank shape when viewed from the X direction, and an intermediate portion thereof is embedded in the side wall 6. The base end portion of the second source sense terminal SS2 is arranged in the case 3. The tip of the second source sense terminal SS2 projects in the + Z direction from the surface of the side wall 6.
The second gate terminal G2 has a crank shape when viewed from the X direction, and an intermediate portion thereof is embedded in the side wall 6. The base end portion of the second gate terminal G2 is arranged in the case 3. The tip of the second gate terminal G2 projects in the + Z direction from the surface of the side wall 6.

The first assembly 40 and the second assembly 80 are arranged side by side in the X direction in the region surrounded by the frame portion 4 on the surface of the heat radiating plate 2 (the surface on the + Z direction side). The first assembly 40 is arranged on the power supply terminals P and N side, and the second assembly 80 is arranged on the output terminal OUT side. The first assembly 40 constitutes a half of the upper arm (high side) circuit and a half of the lower arm (low side) circuit. The second assembly 80 constitutes the other half of the upper arm circuit and the other half of the lower arm circuit. One of the upper arm circuit and the lower arm circuit constitutes the "first circuit" of the present invention, and the other constitutes the "second circuit" of the present invention.

The first assembly 40 includes a first insulating substrate 41, a plurality of first switching elements Tr1, a plurality of first diode elements Di1, a plurality of second switching elements Tr2, a plurality of second diode elements Di2, and a thermistor. Including Th.
The first insulating substrate 41 is substantially rectangular in a plan view, and its four sides are joined to the surface of the heat radiating plate 2 in a posture parallel to the four sides of the heat radiating plate 2. A first bonding conductor layer 42 (see FIG. 4) is formed on the surface of the first insulating substrate 41 on the heat sink 2 side (the surface on the −Z direction side). The first bonding conductor layer 42 is bonded to the heat radiating plate 2 via the solder layer 52.

On the surface of the first insulating substrate 41 opposite to the heat sink 2 (the surface on the + Z direction side), a plurality of conductor layers for the upper arm circuit, a plurality of conductor layers for the lower arm circuit, and a plurality of thermistors. A conductor layer is formed. The plurality of conductor layers for the upper arm circuit include a conductor layer 43 for joining the first element, a conductor layer 44 for the first gate terminal, and a conductor layer 45 for the first source sense terminal. The plurality of conductor layers for the lower arm circuit include a second element bonding conductor layer 46, an N terminal conductor layer 47, a second gate terminal conductor layer 48, and a second source sense terminal conductor layer 49. include. The plurality of conductor layers for thermistors include a conductor layer 50 for a first thermistor terminal and a conductor layer 51 for a second thermistor terminal.

In this embodiment, the first insulating substrate 41 is made of AlN (aluminum nitride). As the first insulating substrate 41, for example, a substrate (DBC: Direct Bonding Copper) in which copper foils are directly bonded to both sides of ceramics can be used. When a DBC substrate is used as the first insulating substrate 41, the conductor layers 42 to 51 can be formed from the copper foil thereof.
The conductor layer 43 for joining the first element is arranged on the surface of the first insulating substrate 41 near the + Y direction side, and has a rectangular shape long in the X direction in a plan view. The conductor layer 43 for joining the first element has a protruding portion extending in the −Y direction at its end on the + X direction side. The conductor layer 47 for N terminals is arranged near the side in the −Y direction on the surface of the first insulating substrate 41, and has a rectangular shape long in the X direction in a plan view. The conductor layer 47 for N terminals has a protruding portion extending toward the protruding portion of the conductor layer 43 for joining the first element at the + X direction side end portion thereof. The second element bonding conductor layer 46 is arranged in a region surrounded by the first element bonding conductor layer 43, the N terminal conductor layer 47, and the side of the first insulating substrate 41 on the −X direction side in a plan view. It is a rectangular shape that is long in the X direction in a plan view.

The conductor layer 44 for the first gate terminal is arranged between the conductor layer 43 for joining the first element and the side of the first insulating substrate 41 on the + Y direction side, and is a rectangular shape elongated in the X direction in a plan view. The conductor layer 45 for the first source sense terminal is arranged between the conductor layer 44 for the first gate terminal and the side of the first insulating substrate 41 on the + Y direction side, and is a rectangular shape elongated in the X direction in a plan view.
The conductor layer 50 for the first thermistor terminal is arranged on the + X direction side of the conductor layer 44 for the first gate terminal between the conductor layer 43 for joining the first element and the side of the first insulating substrate 41 on the + Y direction side. ing. The conductor layer 51 for the second thermistor terminal is arranged on the + X direction side of the conductor layer 45 for the first source sense terminal between the conductor layer 43 for joining the first element and the side of the first insulating substrate 41 on the + Y direction side. Has been done.

The conductor layer 48 for the second gate terminal is arranged between the conductor layer 47 for the N terminal and the side of the first insulating substrate 41 on the −Y direction side, and is a rectangular shape elongated in the X direction in a plan view. The conductor layer 49 for the second source sense terminal is arranged between the conductor layer 48 for the second gate terminal and the side of the first insulating substrate 41 on the −Y direction side, and is a rectangular shape elongated in the X direction in a plan view.
The comb-shaped terminal 31Ab of the first power supply terminal P is joined to the + X direction side end portion of the surface of the conductor layer 43 for joining the first element. The comb-shaped terminal 32Ab of the second power supply terminal N is joined to the + X direction side end portion of the surface of the conductor layer 47 for the N terminal. Since the internal wiring connection portion 31A of the first power supply terminal P has a comb-shaped terminal 31Ab, when bonding the first power supply terminal P to the first element bonding conductor layer 43, for example, a head for ultrasonic bonding. Can be easily ultrasonically bonded to the first element bonding conductor layer 43 by pressing the comb-shaped terminal 31Ab against the tip of the comb-shaped terminal 31Ab. Further, since the internal wiring connection portion 32A of the second power supply terminal N has a comb-shaped terminal 32Ab, when bonding the second power supply terminal N to the conductor layer 47 for N terminal, for example, a head for ultrasonic bonding. Can be easily ultrasonically bonded to the N terminal conductor layer 47 by pressing the comb-shaped terminal 32Ab against the tip of the comb-shaped terminal 32Ab.

The base end portion of the second gate terminal G2 is joined to the conductor layer 48 for the second gate terminal. The base end portion of the second source sense terminal SS2 is joined to the conductor layer 49 for the second source sense terminal. The base end portion of the first thermistor terminal T1 is joined to the conductor layer 50 for the first thermistor terminal. The base end portion of the second thermistor terminal T2 is joined to the conductor layer 51 for the second thermistor terminal. These joints may be performed by ultrasonic welding.

Thermistor Th is arranged on the conductor layer 50 for the first thermistor terminal and the conductor layer 51 for the second thermistor terminal so as to straddle them. One electrode of thermistor Th is bonded to the conductor layer 50 for the first thermistor terminal, and the other electrode is bonded to the conductor layer 51 for the second thermistor terminal.
A plurality of drain electrodes of the first switching element Tr1 are bonded to the surface of the conductor layer 43 for bonding the first element via a solder layer 53 (see FIG. 4), and cathode electrodes of the plurality of first diode elements Di1 are bonded. Is joined via the solder layer 54. In this embodiment, the materials of these solder layers 53 and 54 are SnAgCu-based solders. In this embodiment, the thickness of these solder layers 53, 54 is thinner (for example, 0.08 mm) than the general thickness (for example, 0.12 mm). Each first switching element Tr1 has a source electrode and a gate electrode on a surface opposite to the surface bonded to the first element bonding conductor layer 43. Each first diode element Di1 has an anode electrode on a surface opposite to the surface bonded to the first element bonding conductor layer 43.

Five first diode elements Di1 are arranged side by side at intervals in the X direction on the side of the surface of the conductor layer 43 for joining the first element on the + Y direction side. Further, five first switching elements Tr1 are arranged side by side at intervals in the X direction between the side of the conductor layer 43 for joining the first element on the −Y direction side and the five first diode elements Di1. ing. The five first switching elements Tr1 are position-matched with the five first diode elements Di1 in the Y direction.

The first switching element Tr1 and the first diode element Di1 whose positions are aligned in the Y direction are connected to the second element bonding conductor layer 46 by the first connecting metal member 55 extending in the substantially Y direction in a plan view. ing. The first connecting metal member 55 has a rectangular shape that is long in the Y direction in a plan view. The first connecting metal member 55 is made by bending a conductive plate-like body (for example, a copper plate or a copper plate plated with nickel). The first connecting metal member 55 has a joint portion 55a (see FIG. 4) joined to the second element joining conductor layer 46, a rising portion 55b bonded to the joint portion 55a, and a traverse bonded to the rising portion 55b. It is composed of a portion 55c.

The bonding portion 55a is bonded to the region near the + Y direction side edge of the second element bonding conductor layer 46 via the solder layer 56, and is formed in a rectangular shape extending in the X direction in a plan view. The rising portion 55b rises in the + Z direction from the + Y direction side edge portion of the joint portion 55a. The rising portion 55b is formed of a plate-like body along the XZ plane, and is formed to have substantially the same width as the joint portion 55a. The transverse portion 55c is connected to the + Z direction side edge portion of the rising portion 55b and extends in the + Y direction. The length intermediate portion and the tip portion of the transverse portion 55c are arranged above the first switching element Tr1 and the first diode element Di1, respectively. The transverse portion 55c is formed of a plate-like body parallel to the main surface of the heat radiating plate 2, and is formed to have substantially the same width as the rising portion 55b. The tip end portion (+ Y direction side end portion) of the traversing portion 55c is joined to the anode electrode of the first diode element Di1 via the solder layer 57, and the length intermediate portion of the traversing portion 55c is first switched via the solder layer 58. It is bonded to the source electrode of the element Tr1. As a result, the anode electrode of the first diode element Di1 and the source electrode of the first switching element Tr1 are electrically connected to the second element bonding conductor layer 46 via the first connecting metal member 55.

The width (length in the X direction) of the first connecting metal member 55 is shorter than the width (length in the X direction) of the first switching element Tr1. In a plan view, the + X direction side edge of the transverse portion 55c of the first connecting metal member 55 is positionally aligned with the + X direction side edge of the first switching element Tr1 and the first diode element Di1. In a plan view, the −X direction side edge of the transverse portion 55c of the first connecting metal member 55 is located on the + X direction side of the −X direction side edge of the first switching element Tr1 and the first diode element Di1. As a result, in the case 3, a region closer to the −X direction side edge of the + Z direction side surfaces of the first switching element Tr1 and the first diode element Di1 is exposed.

The gate electrode of each first switching element Tr1 is connected to the conductor layer 44 for the first gate terminal by a wire 59. The source electrode of each first switching element Tr1 is connected to the conductor layer 45 for the first source sense terminal by a wire 60.
Drain electrodes of a plurality of second switching elements Tr2 are bonded to the surface of the conductor layer 46 for bonding the second element via a solder layer 61 (see FIG. 4), and cathode electrodes of the plurality of second diode elements Di2 are bonded. Is joined via the solder layer 62. In this embodiment, the materials of these solder layers 61 and 62 are SnAgCu-based solders. In this embodiment, the thickness of these solder layers 61 and 62 is thinner (for example, 0.08 mm) than the general thickness (for example, 0.12 mm). Each second switching element Tr2 has a source electrode and a gate electrode on a surface opposite to the surface bonded to the second element bonding conductor layer 46. Each second diode element Di2 has an anode electrode on the surface opposite to the surface bonded to the second element bonding conductor layer 46.

Five second switching elements Tr2 are arranged side by side at intervals in the X direction on the side of the surface of the conductor layer 46 for joining the second element on the −Y direction side. Further, five second diode elements Di2 are arranged side by side at intervals in the X direction between the + Y direction side of the second element bonding conductor layer 46 and the five second switching elements Tr2. There is. The five second diode elements Di2 are position-matched with the five second switching elements Tr2 in the Y direction. Further, the five second diode elements Di2 are also position-matched with the five first switching elements Tr1 in the Y direction.

The second switching element Tr2 and the second diode element Di2, which are position-matched in the Y direction, are connected to the N terminal conductor layer 47 by the second connecting metal member 65 extending in the substantially Y direction in a plan view. .. The second connecting metal member 65 is made by bending a conductive plate-like body (for example, a copper plate or a copper plate plated with nickel). The second connecting metal member 65 includes a joint portion 65a (see FIG. 4) bonded to the conductor layer 47 for N terminals, a rising portion 65b bonded to the joint portion 65a, and a transverse portion 65c bonded to the rising portion 65b. It consists of.

The joint portion 65a is joined to the region near the + Y direction side edge of the N terminal conductor layer 47 via the solder layer 66, and is formed in a rectangular shape extending in the X direction in a plan view. The rising portion 65b rises in the + Z direction from the + Y direction side edge portion of the joint portion 65a. The rising portion 65b is formed of a plate-like body along the XZ plane, and is formed to have substantially the same width as the joint portion 65a. The transverse portion 65c is connected to the + Z direction side edge portion of the rising portion 65b and extends in the + Y direction. The length intermediate portion and the tip portion of the transverse portion 65c are arranged above the second switching element Tr2 and the second diode element Di2, respectively. The transverse portion 65c is formed of a plate-like body parallel to the main surface of the heat radiating plate 2, and is formed to have substantially the same width as the rising portion 65b. The tip end portion (+ Y direction side end portion) of the traversing portion 65c is joined to the anode electrode of the second diode element Di2 via the solder layer 67, and the length intermediate portion of the traversing portion 65c is second-switched via the solder layer 68. It is bonded to the source electrode of the element Tr2. As a result, the anode electrode of the second diode element Di2 and the source electrode of the second switching element Tr2 are electrically connected to the N terminal conductor layer 47 via the second connecting metal member 65.

The width (length in the X direction) of the second connecting metal member 65 is shorter than the width (length in the X direction) of the second switching element Tr2. In a plan view, the + X direction side edge of the transverse portion 65c of the second connecting metal member 65 is positionally aligned with the + X direction side edge of the second switching element Tr2 and the second diode element Di2. In a plan view, the −X direction side edge of the transverse portion 65c of the second connecting metal member 65 is located on the + X direction side of the −X direction side edge of the second switching element Tr2 and the second diode element Di2. As a result, in the case 3, a region closer to the −X direction side edge of the + Z direction side surfaces of the second switching element Tr2 and the second diode element Di2 is exposed.

The gate electrode of each second switching element Tr2 is connected to the conductor layer 48 for the second gate terminal by a wire 69. The source electrode of each second switching element Tr2 is connected to the conductor layer 49 for the second source sense terminal by a wire 70.
The second assembly 80 includes a second insulating substrate 81, a plurality of third switching elements Tr3, a plurality of third diode elements Di3, a plurality of fourth switching elements Tr4, and a plurality of fourth diode elements Di4. ..

The first switching element Tr1 of the first assembly 40 and / or the third switching element Tr3 of the second assembly 80 constitutes the "first switching element" of the present invention. The second switching element Tr2 of the first assembly 40 and / or the fourth switching element Tr4 of the second assembly 80 constitutes the "second switching element" of the present invention. The first diode element Di3 of the first assembly 40 and / or the third diode element Di3 of the second assembly 80 constitutes the "first diode element" of the present invention. The second diode element Di2 of the first assembly 40 and / or the fourth diode element Di4 of the second assembly 80 constitutes the "second diode element" of the present invention.

The second insulating substrate 81 has a substantially rectangular shape in a plan view, and its four sides are joined to the surface of the heat radiating plate 2 in a posture parallel to the four sides of the heat radiating plate 2. A second bonding conductor layer 82 (see FIG. 5) is formed on the surface of the second insulating substrate 81 on the heat sink 2 side (the surface on the −Z direction side). The second bonding conductor layer 82 is bonded to the heat radiating plate 2 via the solder layer 90.
On the surface of the second insulating substrate 81 opposite to the heat sink 2 (the surface on the + Z direction side), a plurality of conductor layers for the upper arm circuit and a plurality of conductor layers for the lower arm circuit are formed. .. The plurality of conductor layers for the upper arm circuit include a third element bonding conductor layer 83, a third gate terminal conductor layer 84, and a third source sense terminal conductor layer 85. The plurality of conductor layers for the lower arm circuit include a fourth element bonding conductor layer 86, a source conductor layer 87, a fourth gate terminal conductor layer 88, and a fourth source sense terminal conductor layer 89. ..

The conductor layer 43 for joining the first element of the first assembly 40 and / or the conductor layer 83 for joining the third element of the second assembly 80 constitutes the "conductor layer for joining the first element" of the present invention. The second element bonding conductor layer 46 of the first assembly 40 and / or the fourth element bonding conductor layer 86 of the second assembly 80 constitutes the "second element bonding conductor layer" of the present invention. The conductor layer 47 for the N terminal of the first assembly 40 and / or the conductor layer 87 for the source of the second assembly 80 constitutes the "conductor layer for the second power supply terminal" of the present invention.

In this embodiment, the second insulating substrate 81 is made of AlN (aluminum nitride). As the second insulating substrate 81, for example, a substrate (DBC: Direct Bonding Copper) in which copper foils are directly bonded to both sides of ceramics can be used. When a DBC substrate is used as the second insulating substrate 81, the conductor layers 82 to 89 can be formed from the copper foil thereof.
The conductor layer 83 for joining the third element is arranged near the + Y direction side on the surface of the second insulating substrate 81, and has a rectangular shape long in the X direction in a plan view. The third element bonding conductor layer 83 has a protrusion extending in the + Y direction at its end on the −X direction side. The base end portion of the drain sense terminal DS is joined to this protruding portion.

The conductor layer 87 for a source is arranged on the surface of the second insulating substrate 81 near the −Y direction side, and has a rectangular shape long in the X direction in a plan view. The conductor layer 86 for joining the fourth element is T-shaped in a plan view. The fourth element bonding conductor layer 86 is arranged between the third element bonding conductor layer 83 and the source conductor layer 87, and has a rectangular element bonding portion 86a that is long in the X direction in a plan view and a second element bonding portion 86a. It includes an output terminal joint portion 86b extending along the side of the insulating substrate 81 on the −X direction side. The end portion on the −X direction side of the element junction portion 86a is connected to the length center portion of the output terminal junction portion 86b.

The conductor layer 84 for the third gate terminal is arranged between the conductor layer 83 for joining the third element and the side of the second insulating substrate 81 on the + Y direction side, and has a rectangular shape elongated in the X direction in a plan view. The conductor layer 85 for the third source sense terminal is arranged between the conductor layer 84 for the third gate terminal and the side of the second insulating substrate 81 on the + Y direction side, and has a rectangular shape elongated in the X direction in a plan view.
The conductor layer 88 for the fourth gate terminal is arranged between the conductor layer 87 for the source and the side of the second insulating substrate 81 on the −Y direction side, and is a rectangular shape elongated in the X direction in a plan view. The conductor layer 89 for the fourth source sense terminal is arranged between the conductor layer 88 for the fourth gate terminal and the side of the second insulating substrate 81 on the −Y direction side, and is a rectangular shape elongated in the X direction in a plan view.

The comb-shaped terminal 33Ab of the first output terminal OUT1 and the comb-shaped terminal 34Ab of the second output terminal OUT2 are joined to the surface of the output terminal joining portion 86b of the conductor layer 86 for joining the fourth element. Since the internal wiring connection portion 33A of the first output terminal OUT1 has a comb-shaped terminal 33Ab, when the first output terminal OUT1 is bonded to the output terminal bonding portion 86b, for example, a head for ultrasonic bonding is combed. The comb-shaped terminal 33Ab can be easily ultrasonically bonded to the output terminal bonding portion 86b by pressing against the tip of the shaped terminal 33Ab. Further, since the internal wiring connection portion 34A of the second output terminal OUT2 has a comb-shaped terminal 34Ab, when bonding the second output terminal OUT2 to the output terminal bonding portion 86b, for example, a head for ultrasonic bonding is used. By pressing against the tip of the comb-shaped terminal 34Ab, the comb-shaped terminal 34Abc can be easily ultrasonically bonded to the output terminal bonding portion 86b.

The base end portion of the first gate terminal G1 is joined to the conductor layer 84 for the third gate terminal. The base end portion of the first source sense terminal SS1 is joined to the conductor layer 85 for the third source sense terminal. These joints may be performed by ultrasonic welding.
Drain electrodes of a plurality of third switching elements Tr3 are bonded to the surface of the conductor layer 83 for bonding the third element via a solder layer 91 (see FIG. 5), and cathode electrodes of the plurality of third diode elements Di3 are bonded. Is joined via the solder layer 92. The solder layer 53 and / or the solder layer 91 described above constitutes the "first solder layer" of the present invention. The solder layer 54 and / or the solder layer 92 described above constitutes the “third solder layer” of the present invention. In this embodiment, the materials of these solder layers 91 and 92 are SnAgCu-based solders. In this embodiment, the thickness of these solder layers 91, 92 is thinner (for example, 0.08 mm) than the general thickness (for example, 0.12 mm). Each third switching element Tr3 has a source electrode and a gate electrode on a surface opposite to the surface bonded to the third element bonding conductor layer 83. Each third diode element Di3 has an anode electrode on the surface opposite to the surface bonded to the third element bonding conductor layer 83.

Five third diode elements Di3 are arranged side by side at intervals in the X direction on the side of the surface of the conductor layer 83 for joining the third element on the + Y direction side. Further, five third switching elements Tr3 are arranged side by side at intervals in the X direction between the side of the conductor layer 203 for joining the third element on the −Y direction side and the five third diode elements Di3. ing. The five third switching elements Tr3 are positioned and aligned with the five third diode elements Di3 in the Y direction.

The third switching element Tr3 and the third diode element Di3, which are position-matched in the Y direction, are connected to the fourth element bonding conductor layer 86 by the third connecting metal member 95 extending in the substantially Y direction in a plan view. ing. The third connecting metal member 95 is made by bending a conductive plate-like body (for example, a copper plate or a copper plate plated with nickel). The third connecting metal member 95 has a joint portion 95a (see FIG. 5) joined to the conductor layer 86 for joining the fourth element, a rising portion 95b bonded to the joint portion 95a, and a traverse bonded to the rising portion 95b. It is composed of a part 95c.

The bonding portion 95a is bonded to the region near the + Y direction side edge of the fourth element bonding conductor layer 86 via the solder layer 96, and is formed in a rectangular shape extending in the X direction in a plan view. The rising portion 95b rises in the + Z direction from the + Y direction side edge portion of the joint portion 95a. The rising portion 95b is formed of a plate-like body along the XZ plane, and is formed to have substantially the same width as the joint portion 95a. The transverse portion 95c is connected to the + Z direction side edge portion of the rising portion 95b and extends in the + Y direction. The length intermediate portion and the tip portion of the traversing portion 95c are arranged above the third switching element Tr3 and the third diode element Di3, respectively. The transverse portion 95c is formed of a plate-like body parallel to the main surface of the heat radiating plate 2, and is formed to have substantially the same width as the rising portion 95b. The tip end portion (+ Y direction side end portion) of the traversing portion 95c is joined to the anode electrode of the third diode element Di3 via the solder layer 97, and the length intermediate portion of the traversing portion 95c is connected to the third switching via the solder layer 98. It is bonded to the source electrode of the element Tr3. As a result, the anode electrode of the third diode element Di3 and the source electrode of the third switching element Tr3 are electrically connected to the fourth element bonding conductor layer 86 via the third connecting metal member 95.

The width (length in the X direction) of the third connecting metal member 95 is shorter than the width (length in the X direction) of the third switching element Tr3. In a plan view, the −X direction side edge of the transverse portion 95c of the third connecting metal member 95 is positioned and aligned with the −X direction side edge of the third switching element Tr3 and the third diode element Di3. In a plan view, the + X direction side edge of the transverse portion 95c of the third connecting metal member 95 is located on the −X direction side with respect to the + X direction side edge of the third switching element Tr3 and the third diode element Di3. As a result, in the case 3, the region closer to the + X direction side edge of the + Z direction side surfaces of the third switching element Tr3 and the third diode element Di3 is exposed.

The gate electrode of each third switching element Tr3 is connected to the conductor layer 84 for the third gate terminal by a wire 99. The source electrode of each third switching element Tr3 is connected to the conductor layer 85 for the third source sense terminal by the wire 100.
Drain electrodes of a plurality of fourth switching elements Tr4 are bonded to the surface of the conductor layer 86 for bonding the fourth element via a solder layer 101 (see FIG. 5), and cathode electrodes of the plurality of fourth diode elements Di4 are bonded. Is joined via the solder layer 102. The solder layer 61 and / or the solder layer 101 described above constitutes the "second solder layer" of the present invention. The above-mentioned solder layer 62 and / or the solder layer 102 constitutes the "fourth solder layer" of the present invention. In this embodiment, the materials of these solder layers 101 and 102 are SnAgCu-based solders. In this embodiment, the thickness of these solder layers 101 and 102 is thinner (for example, 0.08 mm) than the general thickness (for example, 0.12 mm). Each fourth switching element Tr4 has a source electrode and a gate electrode on a surface opposite to the surface bonded to the fourth element bonding conductor layer 86. Each fourth diode element Di4 has an anode electrode on the surface opposite to the surface bonded to the fourth element bonding conductor layer 86.

Five fourth switching elements Tr4 are arranged side by side at intervals in the X direction on the side of the surface of the conductor layer 86 for joining the fourth element on the −Y direction side. Further, five fourth diode elements Di4 are arranged side by side at intervals in the X direction between the + Y direction side of the fourth element bonding conductor layer 86 and the five fourth switching elements Tr4. There is. The five fourth diode elements Di4 are position-matched with the five fourth switching elements Tr4 in the Y direction. Further, the five fourth diode elements Di4 are also position-matched with the five third switching elements Tr3 in the Y direction.

The fourth switching element Tr4 and the fourth diode element Di4, which are position-matched in the Y direction, are connected to the source conductor layer 87 by the fourth connecting metal member 105 extending in the substantially Y direction in a plan view. The fourth connecting metal member 105 is made by bending a conductive plate-like body (for example, a copper plate or a copper plate plated with nickel). The fourth connecting metal member 105 includes a joint portion 105a (see FIG. 5) joined to the source conductor layer 87, a rising portion 105b bonded to the joint portion 105a, and a transverse portion 105c bonded to the rising portion 105b. Consists of.

The joint portion 105a is joined to the region near the + Y direction side edge of the source conductor layer 87 via the solder layer 106, and is formed in a rectangular shape extending in the X direction in a plan view. The rising portion 105b rises in the + Z direction from the + Y direction side edge portion of the joint portion 105a. The rising portion 105b is formed of a plate-like body along the XZ plane, and is formed to have substantially the same width as the joint portion 105a. The transverse portion 105c is connected to the + Z direction side edge portion of the rising portion 105b and extends in the + Y direction. The length intermediate portion and the tip portion of the traversing portion 105c are arranged above the fourth switching element Tr4 and the fourth diode element Di4, respectively. The transverse portion 105c is formed of a plate-like body parallel to the main surface of the heat radiating plate 2, and is formed to have substantially the same width as the rising portion 105b. The tip end portion (+ Y direction side end portion) of the traversing portion 105c is joined to the anode electrode of the fourth diode element Di4 via the solder layer 107, and the length intermediate portion of the traversing portion 105c is fourth-switched via the solder layer 108. It is bonded to the source electrode of the element Tr4. As a result, the anode electrode of the fourth diode element Di4 and the source electrode of the fourth switching element Tr4 are electrically connected to the source conductor layer 87 via the fourth connecting metal member 105.

The width (length in the X direction) of the fourth connecting metal member 105 is shorter than the width (length in the X direction) of the fourth switching element Tr4. In a plan view, the −X direction side edge of the transverse portion 105c of the fourth connecting metal member 105 is positioned and aligned with the −X direction side edge of the fourth switching element Tr4 and the fourth diode element Di4. In a plan view, the + X direction side edge of the transverse portion 105c of the fourth connecting metal member 105 is located on the −X direction side with respect to the + X direction side edge of the fourth switching element Tr4 and the fourth diode element Di4. As a result, in the case 3, the region closer to the + X direction side edge of the + Z direction side surfaces of the fourth switching element Tr4 and the fourth diode element Di4 is exposed.

The gate electrode of each fourth switching element Tr4 is connected to the conductor layer 88 for the fourth gate terminal by a wire 109. The source electrode of each fourth switching element Tr4 is connected to the conductor layer 89 for the fourth source sense terminal by a wire 110.
The third element bonding conductor layer 83 of the second assembly 80 is connected to the first element bonding conductor layer 43 of the first assembly 40 by a first conductor layer connecting member 111. The first conductor layer connecting member 111 is made of an H-shaped conductive plate-like body in a plan view. The first conductor layer connecting member 111 includes a pair of rectangular portions straddling the third element bonding conductor layer 83 and the first element bonding conductor layer 43, and a connecting portion connecting the central portions of the lengths of these rectangular portions. It is composed of. One end and the other end of the pair of rectangular portions each form a comb-shaped terminal. Since the conductor layer 43 for joining the first element and the conductor layer 83 for joining the third element are connected by the first conductor layer connecting member 111 made of a plate-like body, the inductance is reduced as compared with the case where these are connected by wires. Can be planned.

Further, since the first conductor layer connecting member 111 has a comb-shaped terminal, for example, when bonding the first conductor layer connecting member 111 to the first element bonding conductor layer 43, an ultrasonic bonding head is used. Can be easily ultrasonically bonded to the conductor layer 43 for bonding the first element by pressing the first conductor layer connecting member 111 against the comb-shaped terminal on the + X direction side of the first conductor layer connecting member 111.
The fourth element joining conductor layer 86 of the second assembly 80 is connected to the second element joining conductor layer 46 of the first assembly 40 by a second conductor layer connecting member 112. The second conductor layer connecting member 112 is made of an H-shaped conductive plate-like body in a plan view. The second conductor layer connecting member 112 includes a pair of rectangular portions straddling the fourth element joining conductor layer 86 and the second element joining conductor layer 46, and a connecting portion connecting the central portions of the lengths of these rectangular portions. It is composed of. One end and the other end of the pair of rectangular portions each form a comb-shaped terminal. Since the conductor layer 46 for joining the second element and the conductor layer 86 for joining the fourth element are connected by the second conductor layer connecting member 112 made of a plate-like body, the inductance can be reduced as compared with the case where these are connected by wires. Can be planned.

Further, since the second conductor layer connecting member 112 has a comb-shaped terminal, for example, when bonding the second conductor layer connecting member 112 to the second element bonding conductor layer 46, an ultrasonic bonding head is used. Is pressed against the comb-shaped terminal on the + X direction side of the second conductor layer connecting member 112, and the second conductor layer connecting member 112 can be easily ultrasonically bonded to the second element bonding conductor layer 46.
The source conductor layer 87 of the second assembly 80 is connected to the N terminal conductor layer 47 of the first assembly 40 by a third conductor layer connecting member 113. The third conductor layer connecting member 113 is made of an H-shaped conductive plate-like body in a plan view. The third conductor layer connecting member 113 is composed of a pair of rectangular portions straddling the source conductor layer 87 and the N terminal conductor layer 47, and a connecting portion connecting the central portions of the lengths of these rectangular portions. .. One end and the other end of the pair of rectangular portions each form a comb-shaped terminal. Since the conductor layer 47 for N terminals and the conductor layer 87 for sources are connected by a third conductor layer connecting member 113 made of a plate-like body, it is possible to reduce the inductance as compared with the case where these are connected by wires. Further, since the third conductor layer connecting member 113 has a comb-shaped terminal, for example, when bonding the third conductor layer connecting member 113 to the conductor layer 47 for N terminal, a head for ultrasonic bonding is used. The third conductor layer connecting member 113 can be easily ultrasonically bonded to the N terminal conductor layer 47 by pressing against the comb-shaped terminal on the + X direction side of the three conductor layer connecting member 113.

The conductor layer 84 for the third gate terminal of the second assembly 80 is connected to the conductor layer 44 for the first gate terminal of the first assembly 40 via the wire 114. The conductor layer 85 for the third source sense terminal of the second assembly 80 is connected to the conductor layer 45 for the first source sense terminal of the first assembly 40 via the wire 115.
The conductor layer 88 for the fourth gate terminal of the second assembly 80 is connected to the conductor layer 48 for the second gate terminal of the first assembly 40 via the wire 116. The conductor layer 89 for the fourth source sense terminal of the second assembly 80 is connected to the conductor layer 49 for the second source sense terminal of the first assembly 40 via the wire 117.

When the first assembly 40 and the second assembly 80 are assembled on the heat radiating plate 2, the heat radiating plate 2 warps so that the central portion becomes convex as shown in the upper side of FIG. In this embodiment, after the first assembly 40 and the second assembly 80 are assembled on the heat sink 2, the lower surface of the heat sink 2 (the surface in the −Z direction) becomes a flat surface as shown by the alternate long and short dash line 120. I'm cutting. As a result, as shown on the lower side of FIG. 9, the heat radiating plate 2 having a thinner wall than the heat radiating plate 2 shown on the upper side of FIG. 9 is realized. In this embodiment, the thickness t of the peripheral edge portion of the heat sink 2 shown on the upper side of FIG. 9 is, for example, about 4 mm, whereas the thickness t of the peripheral edge portion of the heat sink 2 shown on the lower side of FIG. 9 is, for example, about 4 mm. For example, it is about 3.5 mm.

FIG. 10 is an electric circuit diagram for explaining the electrical configuration of the power module 1. In FIG. 10, two output terminals OUT1 and OUT2 are shown as one output terminal OUT.
The plurality of first switching elements Tr1 and the plurality of first diode elements Di1 provided in the first assembly 40, and the plurality of third switching elements Tr3 and the plurality of third diode elements Di3 provided in the second assembly 80 are the first. 1 The power supply terminal P and the output terminal OUT are connected in parallel to form an upper arm circuit (high side circuit) 301. The plurality of second switching elements Tr2 and the plurality of second diode elements Di2 provided in the first assembly 40, and the plurality of fourth switching elements Tr4 and the plurality of fourth diode elements Di4 provided in the second assembly 80 are outputs. It is connected between the terminal OUT and the second power supply terminal N to form a lower arm circuit (low side circuit) 302.

The upper arm circuit 301 and the lower arm circuit 302 are connected in series between the first power supply terminal P and the second power supply terminal N, and are output to the connection point 303 between the upper arm circuit 301 and the lower arm circuit 302. The terminal OUT is connected. The half-bridge circuit is configured in this way. This half-bridge circuit can be used as a single-phase bridge circuit. Further, by connecting a plurality (for example, three) of the half bridge circuits (power module 1) to the power supply in parallel, a plurality of phases (for example, three phases) of bridge circuits can be configured.

In this embodiment, the first to fourth switching elements Tr1 to Tr4 are composed of N-channel DMOS (Double-Diffused Metal Oxide Semiconductor) field effect transistors. In particular, in this embodiment, the first to fourth switching elements Tr1 to Tr4 are high-speed switching MOSFETs (SiC-DMOS) composed of SiC semiconductor devices.

Further, the first to fourth diode elements Di1 to Di4 are composed of Schottky barrier diodes (SBDs) in this embodiment. In particular, in this embodiment, the first to fourth diode elements Di1 to Di4 are composed of a SiC semiconductor device (SiC-SBD).
A first diode element Di1 is connected in parallel to each first switching element Tr1. A third diode element Di3 is connected in parallel to each third switching element Tr3. The drain of each first switching element Tr1 and each third switching element Tr3, and the cathode of each first diode element Di1 and each third diode element Di3 are connected to the first power supply terminal P.

The anodes of the plurality of first diode elements Di1 are connected to the source of the corresponding first switching element Tr1, and the source of the first switching element Tr1 is connected to the output terminal OUT. Similarly, the anodes of the plurality of third diode elements Di3 are connected to the source of the corresponding third switching element Tr3, and the source of the third switching element Tr3 is connected to the output terminal OUT.

The gates of the plurality of first switching elements Tr1 and the plurality of third switching elements Tr3 are connected to the first gate terminal G1. The sources of the plurality of first switching elements Tr1 and the plurality of third switching elements Tr3 are also connected to the first source sense terminal SS1. The drains of the plurality of first switching elements Tr1 and the plurality of third switching elements Tr3 are also connected to the drain sense terminal DS.

A second diode element Di2 is connected in parallel to each second switching element Tr2. A fourth diode element Di4 is connected in parallel to each fourth switching element Tr4. The drain of each second switching element Tr2 and each fourth switching element Tr4, and the cathode of each second diode element Di2 and each fourth diode element Di4 are connected to the output terminal OUT.

The anodes of the plurality of second diode elements Di2 are connected to the source of the corresponding second switching element Tr2, and the source of the second switching element Tr2 is connected to the second power supply terminal N. Similarly, the anodes of the plurality of fourth diode elements Di4 are connected to the source of the corresponding fourth switching element Tr4, and the source of the fourth switching element Tr4 is connected to the second power supply terminal N.

The gates of the plurality of second switching elements Tr2 and the plurality of fourth switching elements Tr4 are connected to the second gate terminal G2. The sources of the plurality of second switching elements Tr2 and the plurality of fourth switching elements Tr4 are also connected to the second source sense terminal SS2.
FIG. 11 shows an electric circuit when the power module 1 is used in an H-bridge circuit. In the H-bridge circuit, two power modules 1 are connected in parallel to the power supply 201. One power module 1 is referred to as a first power module 1A, and the other power module 1 is referred to as a second power module 1B. In FIG. 11, for convenience of explanation, the plurality of first and third transistor elements Tr1 and Tr3 and the plurality of first and third diode elements Di1 and Di3 constituting the upper arm circuit are each one first. It is represented by a transistor element Tr1 and one first diode element Di1. Similarly, the plurality of second and fourth transistor elements Tr2 and Tr4 and the plurality of second and fourth diode elements Di2 and Di4 constituting the lower arm circuit are respectively one second transistor element Tr2 and one first. It is represented by a two-diode element Di2. An inductive load 202 such as a motor is connected between the output terminals OUT of the two power modules 1A and 1B.

In such an H-bridge circuit, for example, the first transistor element Tr1 of the first power module 1A and the second transistor element Tr2 of the second power module 1B are in a conductive state. After that, these transistor elements Tr1 and Tr2 are put into a cutoff state. Then, the second transistor element Tr2 of the first power module 1A and the first transistor element Tr1 of the second power module 1B are brought into a conductive state. After that, these transistor elements Tr1 and Tr2 are put into a cutoff state. Then, the first transistor element Tr1 of the first power module 1A and the second transistor element Tr2 of the second power module 1B are brought into a conductive state. By repeating such an operation, the load 202 is AC-driven.

In the transitional period when the first switching element Tr1 in the first power module 1A is switched from the conductive state to the cutoff state and the second switching element Tr2 is switched from the cutoff state to the conductive state, the first power module 1A Then, as shown by an arrow in FIG. 11, a current flows from the first power supply terminal P through the first switching element Tr1 to the output terminal OUT, and from the output terminal OUT through the second switching element Tr2 to the second power supply terminal N. Current flows through. Further, even in the transitional period when the second switching element Tr2 in the first power module 1A is switched from the conductive state to the cutoff state and the first switching element Tr1 is switched from the cutoff state to the conductive state, the first power is also supplied. In the module 1A, a current flows from the first power supply terminal P through the first switching element Tr1 to the output terminal OUT, and a current flows from the output terminal OUT through the second switching element Tr2 to the second power supply terminal N.

With reference to FIGS. 7 and 8, during such a transitional period, the rising edge 31B of the first power supply terminal P of the first power module 1A is mainly connected to the −Z direction (internal wiring from the external wiring connection portion 31D side). Current flows in the direction toward the connection portion 31A side). On the other hand, a current flows mainly in the + Z direction (direction from the internal wiring connection portion 32A side toward the external wiring connection portion 32D side) in the rising portion 32B of the second power supply terminal N of the first power module 1A.

The rising edge 31B of the first power supply terminal P through which the current flows in the −Z direction and the rising edge 32B of the second power supply terminal N through which the current flows in the + Z direction face each other and are close to each other. As a result, the self-inductance of the first power supply terminal P and the self-inductance of the second power supply terminal N are at least partially canceled by the mutual inductance between them. As a result, the inductance of the power module 1 can be reduced.

The height H (see FIG. 8) of the rising portion 31B of the first power supply terminal P and the rising portion 32B of the second power supply terminal N is preferably 5 mm or more, and the width (length in the X direction) W (see FIG. 7). ) Is preferably 14 mm or more, and the distance d between them (see FIG. 8) is preferably 2 mm or less. In this embodiment, H = 5.5 mm, W = 16.75 mm, and d = 1 mm.

In this embodiment, the source electrode of each switching element Tr1, Tr2, Tr3, Tr4 and the anode electrode of each diode element Di1, Di2, Di3, Di4 are connected to a plate-shaped connecting metal member 55, 65, 95, instead of a wire. 105 is used to electrically connect to the conductor layers 46, 47, 86, 87. Thereby, the thermal resistance of the power module 1 can be reduced.

FIG. 12 shows the case where the flat plate-shaped connecting metal members 55, 65, 95, 105 are used with respect to the thermal resistance of the power module when the wire is used instead of the flat plate-shaped connecting metal members 55, 65, 95, 105. It is a graph showing the thermal resistance ratio of the power module of the above as a thermal resistance ratio. In FIG. 12, the thickness (length in the Z direction) of the connecting metal members 55, 65, 95, 105 is taken on the horizontal axis, and the thermal resistance ratio is taken on the vertical axis.

From FIG. 12, it can be seen that the larger the thickness of the connecting metal members 55, 65, 95, 105, the smaller the thermal resistance of the power module 1. This is because when the thickness of the connecting metal members 55, 65, 95, 105 is increased, the heat dissipation effect of the connecting metal members 55, 65, 95, 105 with respect to the heat generated by the switching elements Tr1 to Tr4 and the diode elements Di1 to Di4. Is high. However, it can be seen that even if the thickness of the connecting metal members 55, 65, 95, 105 becomes larger than 2 mm, the thermal resistance of the power module 1 does not become so small. Therefore, the thickness of the connecting metal members 55, 65, 95, 105 is preferably 0.8 mm or more and 2.0 mm or less. In this embodiment, the thickness of the connecting metal members 55, 65, 95, 105 is 1.0 mm, and the power module 1 is compared with the case where a wire is used instead of the connecting metal members 55, 65, 95, 105. The thermal resistance of the module can be reduced by about 15%.

In this embodiment, as described above, the thickness of the heat sink 2 is reduced by grinding the back surface of the heat sink 2. Thereby, the thermal resistance of the power module 1 can be reduced.
FIG. 13 is a graph showing the ratio of the thermal resistance of the power module when the back surface of the heat radiating plate 2 is ground to the thermal resistance of the power module when the back surface of the heat radiating plate 2 is not ground as the thermal resistance ratio. In FIG. 13, the thickness (length in the Z direction) of the peripheral edge of the heat radiating plate 2 is taken on the horizontal axis, and the thermal resistance ratio is taken on the vertical axis. In FIG. 13, the thickness of the heat radiating plate 2 when the back surface of the heat radiating plate 2 is not ground is 4 mm.

From FIG. 13, it can be seen that the thinner the heat sink 2 is ground, the smaller the thermal resistance of the power module 1. This is because when the thickness of the heat sink 2 is reduced, the heat generated by the switching elements Tr1 to Tr4 and the diode elements Di1 to Di4 cools the heat sink and the like attached to the back surface (the surface on the −Z direction side) of the heat sink 2. This is because it is easily transmitted to the means. Therefore, it is preferable to make the heat sink 2 thinner by grinding the back surface of the heat sink 2. In this embodiment, the thickness of the peripheral edge of the heat sink 2 is 3.5 mm, and the thermal resistance of the power module 1 can be reduced by about 2% as compared with the case where the back surface of the heat sink 2 is not ground.

In this embodiment, the thickness of the solder layers 53, 61, 91, 101 for joining each switching element Tr1, Tr2, Tr3, Tr4 to the element joining conductor layers 43, 46, 83, 86 is general. It is thinner than the thickness. Thereby, the thermal resistance of the power module 1 can be reduced.
FIG. 14 shows a case where the thickness of the solder layers 53, 61, 91, 101 is made thinner than the reference value with respect to the thermal resistance of the power module when the thickness of the solder layers 53, 61, 91, 101 is the reference value. It is a graph which shows the ratio of the thermal resistance of the power module of the above as a thermal resistance ratio. In FIG. 14, the horizontal axis is the thickness of the solder layers 53, 61, 91, 101, and the vertical axis is the thermal resistance ratio. In FIG. 14, the reference value of the thickness of the solder layers 53, 61, 91, 101 is 0.12 mm.

From FIG. 14, it can be seen that the thinner the thickness of the solder layers 53, 61, 91, 101, the smaller the thermal resistance of the power module 1. This is because if the thickness of the solder layers 53, 61, 91, 101 is reduced, the heat generated by the switching elements Tr1 to Tr4 is easily transferred to the heat sink 2. Therefore, it is preferable that the thickness of the solder layers 53, 61, 91, 101 is 0.08 mm or more and 0.10 mm or less. In this embodiment, the thickness of the solder layers 53, 61, 91, 101 is 0.08 mm, and the thickness of the solder layers 53, 61, 91, 101 is 0.12 mm, as compared with the case where the power module 1 is used. The thermal resistance of the module can be reduced by about 2%.

Although the embodiment of the present invention has been described above, the present invention can also be carried out in still other embodiments. For example, in the above-described embodiment, the MOS type field effect transistor composed of the SiC semiconductor device has been described as an example of the switching element, but other types of switching elements such as an IGBT (Insulated Gate Bipolar Transistor) may be applied. .. Further, in the above-described embodiment, the configuration including the switching element and the diode element has been described, but the present invention can also be applied to the semiconductor device not provided with the diode element. Further, the semiconductor device does not necessarily have to constitute a power module.

In addition, various design changes can be made within the scope of the matters described in the claims.

1 Semiconductor module 2 Heat dissipation plate 21 to 24 Terminal block 31A Internal conductor connection 31Aa Base 31Ab Comb-shaped terminal 31B Standing 31C Inclined portion 31D External wiring connection 32A Internal wiring connection 32Aa Base 32Ab Comb-shaped terminal 32B Standing 32C Inclined portion 32D External wiring connection portion 40 1st assembly 41 1st insulating substrate 42 1st bonding conductor layer 43 1st element bonding conductor layer 46 2nd element bonding conductor layer 47 N terminal conductor layer 55 1st connection metal Member 65 Second connecting metal member 80 Second assembly 81 Second insulating substrate 82 Second bonding conductor layer 83 Third element bonding conductor layer 84 Third gate terminal conductor layer 85 Third source sense terminal conductor layer 86 First 4 Conductor layer for joining 4 elements 87 Conductor layer for source 95 3rd connecting metal member 105 4th connecting metal member P 1st power supply terminal N 2nd power supply terminal OUT1 1st output terminal OUT2 2nd output terminal Tr1 to Tr4 Switching element Di1 to Di4 diode element

Claims (11)

In a plan view, the first power supply terminal and the second power supply terminal arranged adjacent to each other in a predetermined direction,
A circuit element electrically connected between the first power supply terminal and the second power supply terminal is included.
The first power supply terminal includes a flat plate-shaped first internal wiring connection portion and a first external wiring connection portion arranged so as to face each other at intervals in the vertical direction along a plan view direction, and the first internal wiring connection portion and the first power supply terminal. The first external wiring connection portion includes a first connection portion that connects the edge portions on the second power supply terminal side to each other.
The second power supply terminal connects the second internal wiring connection portion and the second external wiring connection portion, the second internal wiring connection portion and the second external wiring connection portion, and is adjacent to the first connection portion. Including the second connecting part arranged in
The first connecting portion and the second connecting portion extend in the vertical direction and face each other at a predetermined interval, and the distance between the first connecting portion and the second connecting portion gradually increases upward from these facing portions. Each includes an inclined portion extending in an oblique direction ,
The first connecting portion and the second connecting portion are embedded in a terminal block, and the first connecting portion and the second connecting portion are embedded in a terminal block.
The circuit element has first and second switching elements connected in cascade, and an output is taken out from the connection portion of the first and second switching elements.
The distance between the facing portion of the first connecting portion and the facing portion of the second connecting portion is between the output terminal to which the output is connected and the first power supply terminal or the second power supply terminal. A semiconductor device that is smaller than the minimum spacing. The first internal wiring connection portion and the first external wiring connection portion are arranged to face each other with a predetermined interval.
The semiconductor device according to claim 1 , wherein the second internal wiring connection portion and the second external wiring connection portion are arranged to face each other with a predetermined interval . The semiconductor device according to claim 1 or 2 , wherein the first internal wiring connection portion, the second internal wiring connection portion, and the circuit element are sealed in a case. The semiconductor device according to claim 1 , wherein the first and second switching elements include diodes connected in parallel in opposite directions, respectively. The semiconductor device according to claim 1 , wherein the first and second switching elements are made of a SiC MOSFET or an IGBT. The semiconductor device according to any one of claims 1 to 5 , wherein the distance between the facing portion of the first connecting portion and the facing portion of the second connecting portion is 2 mm or less. Including the circuit board to which the circuit element is attached,
The circuit board has a substantially rectangular shape in a plan view.
The semiconductor device according to any one of claims 1 to 6 , wherein the first power supply terminal and the second power supply terminal are attached to a longitudinal end portion of the circuit board. The first switching element has a plurality of switching elements connected in parallel, and the first switching element has a plurality of switching elements.
The semiconductor device according to claim 1 , wherein the second switching element has a plurality of switching elements connected in parallel. A convex portion is formed in a region between the first external wiring connection portion and the first external wiring connection portion on the surface of the terminal block, and a plurality of grooves are formed on the surface of the convex portion. Item 1. The semiconductor device according to item 1. The convex portion and the groove are in a direction orthogonal to the direction in which the facing portion of the first connecting portion and the facing portion of the second connecting portion face each other, and are in a direction along the surface of the terminal block. The semiconductor device according to claim 9, which extends to. The tenth aspect of the present invention, wherein the length of the convex portion and the groove is larger than the length of the convex portion and the groove in the opposite portion of the first connecting portion and the second connecting portion in the extending direction. Semiconductor device.

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