JP7235916B2 - 太陽電池及びそのドープ領域構造、電池モジュール並びに光起電システム - Google Patents
太陽電池及びそのドープ領域構造、電池モジュール並びに光起電システム Download PDFInfo
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- JP7235916B2 JP7235916B2 JP2022097101A JP2022097101A JP7235916B2 JP 7235916 B2 JP7235916 B2 JP 7235916B2 JP 2022097101 A JP2022097101 A JP 2022097101A JP 2022097101 A JP2022097101 A JP 2022097101A JP 7235916 B2 JP7235916 B2 JP 7235916B2
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- 229910052710 silicon Inorganic materials 0.000 claims description 152
- 239000010703 silicon Substances 0.000 claims description 152
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 151
- 239000000758 substrate Substances 0.000 claims description 139
- 238000002161 passivation Methods 0.000 claims description 134
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 78
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 67
- 239000011148 porous material Substances 0.000 claims description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 30
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
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- 229910021478 group 5 element Inorganic materials 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
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- 229910052782 aluminium Inorganic materials 0.000 claims description 8
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- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 8
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 238000007667 floating Methods 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
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- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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Description
第1ドープ領域20及び第2ドープ領域30がいずれもシリコン基板10の背面に設けられ、且つ第1ドープ領域20及び第2ドープ領域30がいずれも前記実施例に記載のドープ領域構造であり、第1ドープ領域20と第2ドープ領域30との間に溝が設けられる電池1、
第1ドープ領域20及び第2ドープ領域30がいずれもシリコン基板10の背面に設けられ、且つ第1ドープ領域20及び第2ドープ領域30のうちの一方が前記実施例に記載のドープ領域構造であり、他方が第3ドープ層からなる拡散構造であり、第1ドープ領域20と第2ドープ領域30との間に溝が設けられる電池2、
第1ドープ領域20及び第2ドープ領域30がいずれもシリコン基板10の背面に設けられ、且つ第1ドープ領域20及び第2ドープ領域30のうちの一方が前記実施例に記載のドープ領域構造であり、他方がトンネル層及びドープ領域からなる不動態化接触構造であり、第1ドープ領域20と第2ドープ領域30との間に溝が設けられる電池3、
第1ドープ領域20及び第2ドープ領域30がシリコン基板10の凹溝内に交互に設けられ、且つ第1ドープ領域20及び第2ドープ領域30がいずれも前記実施例に記載のドープ領域構造である電池4、
第1ドープ領域20及び第2ドープ領域30がシリコン基板10の凹溝内に交互に設けられ、且つ第1ドープ領域20及び第2ドープ領域30のうちの一方が前記実施例に記載のドープ領域構造であり、他方が第3ドープ層からなる拡散構造である電池5、
第1ドープ領域20及び第2ドープ領域30がシリコン基板10の凹溝内に交互に設けられ、且つ第1ドープ領域20及び第2ドープ領域30のうちの一方が前記実施例に記載のドープ領域構造であり、他方がトンネル層及びドープ領域からなる不動態化接触構造である電池6、
第1ドープ領域20が凹溝内に設けられ第2ドープ領域30がボス上に設けられ、且つ第1ドープ領域20及び第2ドープ領域30がいずれも前記実施例に記載のドープ領域構造であり、第1ドープ領域20と第2ドープ領域30との間に溝が設けられてもよい電池7、
第1ドープ領域20及び第2ドープ領域30のうちの一方が前記実施例に記載のドープ領域構造であり、他方が第3ドープ層からなる拡散構造であり、且つドープ領域構造がボス上に設けられ、拡散構造が凹溝内に設けられ、第1ドープ領域20と第2ドープ領域30との間に溝が設けられてもよい電池8、
第1ドープ領域20及び第2ドープ領域30のうちの一方が前記実施例に記載のドープ領域構造であり、他方が第3ドープ層からなる拡散構造であり、且つドープ領域構造が凹溝内に設けられ、拡散構造がボス上に設けられ、第1ドープ領域20と第2ドープ領域30との間に溝が設けられてもよい電池9、
第1ドープ領域20及び第2ドープ領域30のうちの一方が前記実施例に記載のドープ領域構造であり、他方がトンネル層及びドープ領域からなる不動態化接触構造であり、且つドープ領域構造がボス上に設けられ、不動態化接触構造が凹溝内に設けられ、第1ドープ領域20と第2ドープ領域30との間に溝が設けられてもよい電池10、又は
第1ドープ領域20及び第2ドープ領域30のうちの一方が前記実施例に記載のドープ領域構造であり、他方がトンネル層及びドープ領域からなる不動態化接触構造であり、且つドープ領域構造が凹溝内に設けられ、不動態化接触構造がボス上に設けられ、第1ドープ領域20と第2ドープ領域30との間に溝が設けられてもよい電池11であり得る。
シリコン基板10と、
シリコン基板10の背面に設けられる前記実施例に記載のドープ領域構造1と、
ドープ領域構造1上に設けられる第3誘電体層80と、
シリコン基板10の正面に順に設けられる第4ドープ層90及び第4誘電体層100と、
ドープ領域構造1に電気的に接続される第3導電層110及び第4ドープ層90に電気的に接続される第4導電層120と、を含み、
ドープ領域構造1と第4ドープ層90は反対の極性を有する。
10 :シリコン基板
11 :第1ドープ層
12 :不動態化層
13 :第2ドープ層
20 :第1ドープ領域
30 :第2ドープ領域
40 :第1誘電体層
50 :第2誘電体層
60 :第1導電層
70 :第2導電層
80 :第3誘電体層
90 :第4ドープ層
100 :第4誘電体層
110 :第3導電層
120 :第4導電層
Claims (42)
- シリコン基板上に順に設けられる第1ドープ層、不動態化層、及び第2ドープ層を含み、
前記不動態化層は孔領域を有する多孔構造であり、前記不動態化層は前記孔領域において前記第1ドープ層及び/又は前記第2ドープ層を有し、前記第2ドープ層と前記シリコン基板は、ドープされた前記孔領域及び前記第1ドープ層を介して接続されることを特徴とする、太陽電池のドープ領域構造。 - 前記第1ドープ層と前記第2ドープ層は同じドーピング極性であることを特徴とする、請求項1に記載のドープ領域構造。
- 前記多孔構造の孔径が20μm未満であることを特徴とする、請求項1に記載のドープ領域構造。
- 前記多孔構造の非孔領域に前記第1ドープ層及び/又は前記第2ドープ層と同じドーピング型のドーパントが含有されることを特徴とする、請求項1に記載のドープ領域構造。
- 前記多孔構造の前記孔領域に前記第1ドープ層及び/又は前記第2ドープ層が部分的に含有されることを特徴とする、請求項1に記載のドープ領域構造。
- 前記多孔構造の前記孔領域の面積が前記多孔構造の全体面積を占める比率は20%未満であり、前記多孔構造の各孔が前記不動態化層上に疎に分布することを特徴とする、請求項1に記載のドープ領域構造。
- 前記不動態化層の厚さが0.5~10nmであることを特徴とする、請求項1に記載のドープ領域構造。
- 前記不動態化層の厚さが0.8~2nmであることを特徴とする、請求項7に記載のドープ領域構造。
- 前記不動態化層は酸化層、炭化シリコン層、及び非晶質シリコン層のうちの1つ又は複数の組合せであることを特徴とする、請求項1に記載のドープ領域構造。
- 前記酸化層は酸化シリコン層、酸化アルミニウム層のうちの1層又は複数層からなることを特徴とする、請求項9に記載のドープ領域構造。
- 前記不動態化層中の炭化シリコン層は水素化炭化シリコン層を含むことを特徴とする、請求項9に記載のドープ領域構造。
- 前記第1ドープ層のドーピング濃度が前記シリコン基板のドーピング濃度と前記第2ドープ層のドーピング濃度との間にあることを特徴とする、請求項1に記載のドープ領域構造。
- 前記第1ドープ層の接合深さが1.5μm未満であり、前記第1ドープ層が離散的に前記不動態化層の各孔領域に居所分布することを特徴とする、請求項1に記載のドープ領域構造。
- 前記第1ドープ層はIII族又はV族元素でドープされたドープト単結晶シリコン層であり、前記第1ドープ層が完全に連続的に前記シリコン基板と前記不動態化層との間に設けられることを特徴とする、請求項1に記載のドープ領域構造。
- 前記第2ドープ層はドープト多結晶シリコン層又はドープト炭化シリコン層又はドープト非晶質シリコン層を含むことを特徴とする、請求項1に記載のドープ領域構造。
- 前記第2ドープ層中のドープト炭化シリコン層は異なる屈折率の少なくとも1層のドープト炭化シリコン膜からなることを特徴とする、請求項15に記載のドープ領域構造。
- 各前記ドープト炭化シリコン膜の屈折率が前記シリコン基板から外へ順に低くなることを特徴とする、請求項16に記載のドープ領域構造。
- 前記第2ドープ層中のドープト炭化シリコン層はドープト水素化炭化シリコン層を含み、前記ドープト水素化炭化シリコン層の電気伝導率が0.01S/cm超であり、厚さが10nm超であることを特徴とする、請求項15に記載のドープ領域構造。
- 前記シリコン基板と
前記シリコン基板の背面に交互に設けられる、反対の極性を有する第1ドープ領域及び第2ドープ領域と、
前記シリコン基板の正面に設けられる第1誘電体層と、
前記第1ドープ領域と前記第2ドープ領域との間に設けられる第2誘電体層と、
前記第1ドープ領域上に設けられる第1導電層及び前記第2ドープ領域上に設けられる第2導電層と、を含み、
前記第1ドープ領域及び/又は前記第2ドープ領域は請求項1から18のいずれか1項に記載のドープ領域構造を採用することを特徴とする、太陽電池。 - 前記第1ドープ領域及び前記第2ドープ領域のうちの一方は請求項1から18のいずれか1項に記載のドープ領域構造を採用し、他方は前記シリコン基板の背面内に設けられる第3ドープ層であることを特徴とする、請求項19に記載の太陽電池。
- 前記第3ドープ層はIII族又はV族元素でドープされたドープト単結晶シリコン層であることを特徴とする、請求項20に記載の太陽電池。
- 前記シリコン基板の背面に凹溝が間隔をおいて設けられ、前記第1ドープ領域と前記第2ドープ領域が各前記凹溝内に交互に設けられることを特徴とする、請求項19に記載の太陽電池。
- 前記シリコン基板の背面に凹溝が間隔をおいて設けられ、前記第1ドープ領域及び前記第2ドープ領域のうちの一方が前記凹溝内に設けられ、他方が前記凹溝外に設けられることを特徴とする、請求項19に記載の太陽電池。
- 前記第1ドープ領域と前記第2ドープ領域との間に溝が設けられることを特徴とする、請求項19に記載の太陽電池。
- 前記第1ドープ領域及び/又は前記第2ドープ領域が前記凹溝内外の一部の領域に設けられることを特徴とする、請求項23に記載の太陽電池。
- 前記第1誘電体層及び前記第2誘電体層は酸化アルミニウム層、窒化シリコン層、酸窒化シリコン層、炭化シリコン層、非晶質シリコン層及び酸化シリコン層のうちの1つ又は複数の組合せであることを特徴とする、請求項19に記載の太陽電池。
- 前記第1誘電体層及び/又は前記第2誘電体層は酸化アルミニウム層及び炭化シリコン層であるか、又は酸化シリコン層及び炭化シリコン層であり、
前記第1誘電体層の厚さが50nm超であり、前記第2誘電体層の厚さが25nm超であることを特徴とする、請求項26に記載の太陽電池。 - 前記第1誘電体層中の酸化アルミニウム層又は酸化シリコン層の厚さが40nm未満であり、前記第2誘電体層中の酸化アルミニウム層又は酸化シリコン層の厚さが25nm未満であり、前記第1誘電体層及び/又は前記第2誘電体層中の炭化シリコン層の厚さが10nm超であることを特徴とする、請求項27に記載の太陽電池。
- 前記第1誘電体層及び/又は前記第2誘電体層中の炭化シリコン層は異なる屈折率の少なくとも1層の炭化シリコン膜からなることを特徴とする、請求項26に記載の太陽電池。
- 各前記炭化シリコン膜の屈折率がシリコン基板から外へ順に低くなることを特徴とする、請求項29に記載の太陽電池。
- 前記第1誘電体層及び/又は前記第2誘電体層の外層にさらにフッ化マグネシウム層が設けられることを特徴とする、請求項26に記載の太陽電池。
- 前記第1導電層及び前記第2導電層はTCO透明導電膜及び/又は金属電極であることを特徴とする、請求項19に記載の太陽電池。
- 前記金属電極は銀電極、銅電極、アルミニウム電極、錫被覆銅電極又は銀被覆銅電極を含むことを特徴とする、請求項32に記載の太陽電池。
- 前記金属電極は銅電極であることを特徴とする、請求項33に記載の太陽電池。
- 前記シリコン基板の正面と前記第1誘電体層との間にさらに電界層又は浮遊接合が設けられることを特徴とする、請求項19に記載の太陽電池。
- 前記第1ドープ領域及び前記第2ドープ領域のうちの一方がP型ドープ領域であり、他方がN型ドープ領域であり、前記P型ドープ領域における前記不動態化層の厚さが前記N型ドープ領域における前記不動態化層の厚さより大きいことを特徴とする、請求項19に記載の太陽電池。
- 前記第1ドープ領域及び前記第2ドープ領域のうちの一方がP型ドープ領域であり、他方がN型ドープ領域であり、前記P型ドープ領域における前記不動態化層の孔密度が前記N型ドープ領域における前記不動態化層の孔密度より大きいことを特徴とする、請求項19に記載の太陽電池。
- 前記シリコン基板と、
前記シリコン基板の背面に設けられる請求項1から18のいずれか1項に記載のドープ領域構造と、
前記ドープ領域構造上に設けられる第3誘電体層と、
前記シリコン基板の正面に順に設けられる第4ドープ層及び第4誘電体層と、
前記ドープ領域構造に電気的に接続される第3導電層及び前記第4ドープ層に電気的に接続される第4導電層と、を含み、
前記ドープ領域構造と前記第4ドープ層は反対の極性を有することを特徴とする、太陽電池。 - 請求項19に記載の太陽電池を含むことを特徴とする、電池モジュール。
- 請求項39に記載の電池モジュールを含むことを特徴とする、光起電システム。
- 請求項38に記載の太陽電池を含むことを特徴とする、電池モジュール。
- 請求項41に記載の電池モジュールを含むことを特徴とする、光起電システム。
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CN113284967A (zh) | 2021-08-20 |
EP4374430A2 (en) | 2024-05-29 |
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EP4123724B1 (en) | 2023-10-25 |
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AU2022204107A1 (en) | 2023-02-09 |
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AU2022204107B2 (en) | 2023-10-05 |
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