JP7210595B2 - 量子アプリケーションのための高熱伝導率基板上のマイクロ波減衰器 - Google Patents
量子アプリケーションのための高熱伝導率基板上のマイクロ波減衰器 Download PDFInfo
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- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
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- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
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Description
Claims (18)
- デバイスであって、
規定された熱伝導率レベルより大きな熱伝導率レベルをもたらす基板であって、前記基板の前記熱伝導率レベルは、ケルビン当たりメートル当たり約100から200ワット(W/m/K)の範囲内である、前記基板と、
蒸着した合金を備えた、前記基板の上面上の、1つまたは複数の薄膜ラインと、
前記基板内の1つまたは複数のビアであって、前記1つまたは複数のビアのそれぞれの第1の端部はそれぞれの薄膜コネクタに接続され、前記1つまたは複数のビアのそれぞれの第2の端部は電気的接地に接続される、前記1つまたは複数のビアと
を備えるデバイス。 - 前記基板は、サファイア、石英ガラス、石英、酸化マグネシウム(MgO)、およびガリウム砒素(GaAs)からなる群から選択された材料を備える、請求項1に記載のデバイス。
- 前記1つまたは複数の薄膜ラインは、銅およびニクロム(NiCr)からなる群から選択された合金を備える、請求項1または2のいずれかに記載のデバイス。
- 前記1つまたは複数の薄膜ラインは、70%のニッケルおよび30%のクロムを備えた合金を備える、請求項1ないし3のいずれかに記載のデバイス。
- 前記1つまたは複数のビアは銅を備える、請求項1ないし4のいずれかに記載のデバイス。
- 前記デバイスは1つまたは複数の抵抗器を備え、前記それぞれの薄膜コネクタおよび前記1つまたは複数のビアは、前記1つまたは複数の抵抗器からホット・エレクトロンを除去する、請求項1ないし5のいずれかに記載のデバイス。
- 接地面をさらに備え、前記基板は前記接地面の上にある、請求項1ないし6のいずれかに記載のデバイス。
- 前記デバイスは、極低温環境で使用されるマイクロ波減衰器デバイスである、請求項1ないし7のいずれかに記載のデバイス。
- 方法であって、
1つまたは複数の薄膜ラインを形成するために、基板の上面上に合金を蒸着することであって、前記基板は、規定された熱伝導率レベルより大きな熱伝導率レベルをもたらす基板であり、前記基板の前記熱伝導率レベルは、ケルビン当たりメートル当たり約100から200ワット(W/m/K)の範囲内である、前記蒸着することと、
前記基板内に1つまたは複数のビアを形成することと、
前記1つまたは複数のビアのそれぞれの第1の端部をそれぞれの薄膜コネクタに接続することと、
前記1つまたは複数のビアのそれぞれの第2の端部を電気的に接地することと
を含む方法。 - 前記基板は、サファイア、石英ガラス、石英、酸化マグネシウム(MgO)、およびガリウム砒素(GaAs)からなる群から選択された材料を備える、請求項9に記載の方法。
- 前記基板の前記上面上に前記合金を前記蒸着することは、前記1つまたは複数の薄膜ラインを形成するために、銅およびニクロム(NiCr)からなる群から選択された材料を蒸着することを含む、請求項9または10のいずれかに記載の方法。
- 前記基板の前記上面上に前記合金を前記蒸着することは、70%のニッケルおよび30%のクロムを備えた合金を蒸着することを含む、請求項9または10のいずれかに記載の方法。
- 前記1つまたは複数のビア内に銅を蒸着することをさらに含む、請求項9ないし12のいずれかに記載の方法。
- 前記基板上に1つまたは複数の抵抗器を形成することをさらに含み、前記それぞれの薄膜コネクタおよび前記1つまたは複数のビアは、前記1つまたは複数の抵抗器からホット・エレクトロンを除去する、請求項9ないし13のいずれかに記載の方法。
- 接地面をもたらすことをさらに含み、前記基板は前記接地面の上に位置する、請求項9ないし14のいずれかに記載の方法。
- マイクロ波減衰器デバイスであって、
規定された熱伝導率レベルより大きな熱伝導率レベルをもたらす基板であって、前記基板の前記熱伝導率レベルは、ケルビン当たりメートル当たり約100から200ワット(W/m/K)の範囲内である、前記基板と、
蒸着した合金を備えた、前記基板の上面上の、1つまたは複数の薄膜ラインと、
前記基板内の1つまたは複数のビアであって、前記1つまたは複数のビアのそれぞれの第1の端部はそれぞれの薄膜コネクタに接続され、前記1つまたは複数のビアのそれぞれの第2の端部は電気的接地に接続される、前記1つまたは複数のビアと
を備えるマイクロ波減衰器デバイス。 - 前記基板は、サファイア、石英ガラス、石英、酸化マグネシウム(MgO)、およびガリウム砒素(GaAs)からなる群から選択された材料を備える、請求項16に記載のマイクロ波減衰器デバイス。
- 前記1つまたは複数の薄膜ラインは、銅およびニクロム(NiCr)からなる群から選択された合金を備え、前記1つまたは複数のビアは前記銅を備える、請求項16または17のいずれかに記載のマイクロ波減衰器デバイス。
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US15/894,631 US10505245B2 (en) | 2018-02-12 | 2018-02-12 | Microwave attenuators on high-thermal conductivity substrates for quantum applications |
US15/894,631 | 2018-02-12 | ||
PCT/EP2019/051899 WO2019154638A1 (en) | 2018-02-12 | 2019-01-25 | Microwave attenuators on high-thermal conductivity substrates for quantum applications |
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JP2021513233A JP2021513233A (ja) | 2021-05-20 |
JP7210595B2 true JP7210595B2 (ja) | 2023-01-23 |
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US (1) | US10505245B2 (ja) |
EP (1) | EP3753068B1 (ja) |
JP (1) | JP7210595B2 (ja) |
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US11011693B2 (en) * | 2019-06-24 | 2021-05-18 | Intel Corporation | Integrated quantum circuit assemblies for cooling apparatus |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5332981A (en) | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
US5585331A (en) | 1993-12-03 | 1996-12-17 | Com Dev Ltd. | Miniaturized superconducting dielectric resonator filters and method of operation thereof |
US6097263A (en) | 1996-06-28 | 2000-08-01 | Robert M. Yandrofski | Method and apparatus for electrically tuning a resonating device |
US6812464B1 (en) | 2000-07-28 | 2004-11-02 | Credence Systems Corporation | Superconducting single photon detector |
US8212648B2 (en) * | 2004-10-13 | 2012-07-03 | Yantel Corporation | Variable attenuator |
US7215219B2 (en) | 2005-04-15 | 2007-05-08 | Smith Interconnect Microwave Components, Inc. | Temperature and frequency variable gain attenuator |
JP4508037B2 (ja) * | 2005-08-23 | 2010-07-21 | 横河電機株式会社 | 減衰器 |
US20090015355A1 (en) * | 2007-07-12 | 2009-01-15 | Endwave Corporation | Compensated attenuator |
TWI360912B (en) | 2008-04-25 | 2012-03-21 | Univ Nat Chiao Tung | Vertical transition structure |
US7855615B1 (en) * | 2008-05-02 | 2010-12-21 | Smiths Interconnect Microwave Components, Inc. | Frequency adaptive temperature variable attenuator |
US8143969B2 (en) * | 2009-10-09 | 2012-03-27 | State Of The Art, Inc. | Multiple tap attenuator microchip device |
JP6028280B2 (ja) * | 2009-11-18 | 2016-11-16 | ソイテックSoitec | 半導体構造又は半導体素子を製造する方法 |
US8878626B2 (en) | 2010-10-20 | 2014-11-04 | California Institute Of Technology | Dispersion-engineered traveling wave kinetic inductance parametric amplifier |
US8954125B2 (en) | 2011-07-28 | 2015-02-10 | International Business Machines Corporation | Low-loss superconducting devices |
US8841764B2 (en) | 2012-01-31 | 2014-09-23 | International Business Machines Corporation | Superconducting quantum circuit having a resonant cavity thermalized with metal components |
US20130258595A1 (en) | 2012-03-27 | 2013-10-03 | Microsoft Corporation | Heat Transfer For Superconducting Integrated Circuits At Millikelvin Temperatures |
CN205882136U (zh) | 2013-02-01 | 2017-01-11 | 株式会社村田制作所 | 高频滤波器、高频双工器以及电子设备 |
CN104981087B (zh) | 2014-04-03 | 2018-04-13 | 瑞昱半导体股份有限公司 | 信号传输线结构及其应用的电子装置 |
US10290916B2 (en) | 2014-08-12 | 2019-05-14 | The University Of Western Australia | Microwave frequency magnetic field manipulation systems and methods and associated application instruments, apparatus and system |
EP3109575B1 (en) | 2015-06-23 | 2018-10-10 | ID Quantique | Apparatus and method for cryocooled devices thermalization with rf electrical signals |
US9589236B1 (en) | 2015-09-28 | 2017-03-07 | International Business Machines Corporation | High fidelity and high efficiency qubit readout scheme |
US10755190B2 (en) | 2015-12-21 | 2020-08-25 | D-Wave Systems Inc. | Method of fabricating an electrical filter for use with superconducting-based computing systems |
US10176431B2 (en) | 2016-03-02 | 2019-01-08 | University Of Maryland, College Park | Low-noise, ultra-low temperature dissipative devices |
US10740688B2 (en) | 2016-03-11 | 2020-08-11 | Rigetti & Co, Inc. | Impedance-matched microwave quantum circuit systems |
CN105860141A (zh) | 2016-04-26 | 2016-08-17 | 深圳市博赛新材有限公司 | 一种导热粉体填料的改性处理的方法及导热填料 |
WO2018004636A1 (en) | 2016-07-01 | 2018-01-04 | Intel Corporation | Interconnects below qubit plane by substrate bonding |
CN107369706A (zh) * | 2017-07-17 | 2017-11-21 | 华南理工大学 | 一种显示用电子器件铜合金电极及其制备方法 |
-
2018
- 2018-02-12 US US15/894,631 patent/US10505245B2/en active Active
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- 2019-01-25 JP JP2020538888A patent/JP7210595B2/ja active Active
- 2019-01-25 CN CN201980012370.8A patent/CN111699587A/zh active Pending
- 2019-01-25 EP EP19702552.1A patent/EP3753068B1/en active Active
- 2019-01-25 WO PCT/EP2019/051899 patent/WO2019154638A1/en unknown
Non-Patent Citations (2)
Title |
---|
JUAN LUIS CANO; ET AL,ULTRA-WIDEBAND CHIP ATTENUATOR FOR PRECISE NOISE MEASUREMENTS AT CRYOGENIC TEMPERATURES,IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,米国,PLENUM,2010年09月,VOL:58, NR:9,PAGE(S):2504 - 2510,http://doi.org/10.1109/TMTT.2010.2058276 |
YEH JEN-HAO; ET AL,MICROWAVE ATTENUATORS FOR USE WITH QUANTUM DEVICES BELOW 100 MK,JOURNAL OF APPLIED PHYSICS,米国,AMERICAN INSTITUTE OF PHYSICS,2017年06月08日,VOL:121, NR:22,P224501/1-8,http://dx.doi.org/10.1063/1.4984894 |
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EP3753068B1 (en) | 2024-02-28 |
JP2021513233A (ja) | 2021-05-20 |
EP3753068A1 (en) | 2020-12-23 |
US20190252752A1 (en) | 2019-08-15 |
WO2019154638A1 (en) | 2019-08-15 |
US10505245B2 (en) | 2019-12-10 |
CN111699587A (zh) | 2020-09-22 |
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