JP7186709B2 - プリンテッド・エレクトロニクス - Google Patents
プリンテッド・エレクトロニクス Download PDFInfo
- Publication number
- JP7186709B2 JP7186709B2 JP2019542760A JP2019542760A JP7186709B2 JP 7186709 B2 JP7186709 B2 JP 7186709B2 JP 2019542760 A JP2019542760 A JP 2019542760A JP 2019542760 A JP2019542760 A JP 2019542760A JP 7186709 B2 JP7186709 B2 JP 7186709B2
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- Prior art keywords
- traces
- printed
- conductive metal
- substrate
- inks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C—CHEMISTRY; METALLURGY
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
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- H—ELECTRICITY
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- H01M2220/20—Batteries in motive systems, e.g. vehicle, ship, plane
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/10151—Sensor
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Description
開示された主題は、一般にプリンテッド・エレクトロニクスに関する。より具体的には、開示された主題は、分子インク又はフレークインクを用いたプリンテッド・エレクトロニクスの応用に関する。
分子インク又はフレークインクといった、プリントされるインクに特定の特性を付与するように設計されたインクが存在する。
フレークインク
分子インク
プリンテッド・エレクトロニクスに基づく電装部品
分子インクで作製された回路
分子インク及び他のインクを用いたプリンテッド・エレクトロニクスの応用
-受動又は能動の、リジッド又はフレキシブルなプリント電子部品
-フレキシブル又はリジッドなプリント回路板
-はんだ付け可能なプリント回路板
-プリントされたフレキシブルな発熱体、例えば、航空宇宙用途用
-プリントされたコプレーナ導波路、RFアンテナ、RFフィルタ及びハイブリッドRFデバイス
-選択的周波数での、プリントされたRFエンジニア加工フィルタリング又は反射又は配向の面
-プリントされたフレキシブル又はリジッドな太陽電池
-プリントされた半導体デバイス
-プリントされた微細ワイヤフレキシブル又はリジッドなタッチインターフェイス
-プリントされたフレキシブル又はリジッドな透明電極
-プリントされた容量性又は抵抗性のフレキシブル又はリジッドなインターフェイス
-プリントされたフレキシブルな電界発光ランプ
-フレキシブル基板上にプリントされたウェアラブル電子装置
-プリントされた物理化学的及び電気機械的センサ
RF用途
航空宇宙用途
太陽電池
導電膜及びタッチインターフェイス
ディスクリートアクティブスイッチのハイブリッド統合
CPW線路及びフィルタ
微細ワイヤ
熱成形高温銀分子インク
の、導電性トレースシートの抵抗率値を生じることができる。光焼結は、熱処理法では数十分かかるのとは対照的に、ミリ秒でのトレースの処理を可能とするため有意義である。光焼結は、ポリエチレンテレフタラート、ポリエチレンナフタレート、ポリカーボネート及びグリコール変性ポリエチレンテレフタラート(PETG)等の低温の基板上での分子インクの処理を可能とすることが実証されている。PETG上でインクを処理するのにIPLを使用できることは、インモールド電子回路を生成する独特な方法を検討する可能性を開くことになるので価値がある。インモールド電子装置の生成に分子インク及び光焼結の組み合わせを使用することの潜在的な利点は、トレースが導電性トレースに変換され、次いで光子エネルギーを用いて導電性3Dトレースに変換される前に、トレースを成型できるという事実にある。このことは銀フレークインクでは不可能であり、分子インクを用いてのみ実行可能な他に類を見ないプロセスである。
Claims (23)
- 基板上のプリント微細ワイヤに連結された容量性技術フィールドをプリントする方法であって、
以下のa)及び(b)の組成物
a)30~60重量%のC8~C12カルボン酸銀、0.1~10重量%の高分子バインダー及び少なくとも一種の有機溶媒の残部で構成されるフレーク非含有のプリント可能な組成物、ここで、全ての重量は前記組成物の総重量に基づく;或いは、
b)5~75重量%のビス(2-エチル-1-ヘキシルアミン)銅(II)ホルマート、ビス(オクチルアミン)銅(II)ホルマート又はトリス(オクチルアミン)銅(II)ホルマート、0.25~10重量%の高分子バインダー及び少なくとも一種の有機溶媒の残部で構成されるフレーク非含有のプリント可能な組成物、ここで、全ての重量は前記組成物の総重量に基づく;
から選択される分子インクを用いて、一つ以上の通常のトレースに接続されたトレースのグリッドをプリントする工程と、
前記トレースを熱成形して、熱成形トレースを形成する工程と、
前記分子インクの前記熱成形トレースを焼結して、導電性金属トレースを形成する工程と、を有し、
前記プリントされたトレースは伸縮可能且つ熱成形可能であり、前記プリントされたトレースは前記導電性金属トレースの電気的性能を著しく低減することなく熱成形中に50%超の歪みを受け、
前記グリッドが許容可能な導電性及び透明性を示すよう前記導電性金属トレースは、10~50μmの範囲を有する、方法。 - 前記トレースが、少なくとも透明電極を形成するためにプリントされる、請求項1に記載の方法。
- 前記トレースが、少なくともウェアラブル電子デバイス又はインモールド電子デバイスを形成するためにプリントされる、請求項1に記載の方法。
- 前記トレースが、少なくとも透明導電膜を形成するためにプリントされる、請求項1の方法。
- 前記透明導電膜が、プリント銀電極のグリッド又はパターンを含む、請求項4に記載の方法。
- 前記基板が、柔軟性を有する、請求項4に記載の方法。
- 導電性金属トレースをレーザートリミングすることにより容量性微細ワイヤを作製することを含む、請求項4に記載の方法。
- 前記導電性金属トレースを選択的に焼結することを更に含む、請求項7に記載の方法。
- ポリエチレンテレフタラート、ポリエチレンナフタレート、ポリカーボネート及びグリコール変性ポリエチレンテレフタラート(PETG)のいずれか1種以上を含む基板上に導電性金属トレースをプリントする方法であって、
以下のa)及び(b)の組成物:
a)30~60重量%のC8~C12カルボン酸銀、0.1~10重量%の高分子バインダー及び少なくとも一種の有機溶媒の残部で構成されるフレーク非含有のプリント可能な組成物、ここで、全ての重量は前記組成物の総重量に基づく;或いは、
b)5~75重量%のビス(2-エチル-1-ヘキシルアミン)銅(II)ホルマート、ビス(オクチルアミン)銅(II)ホルマート又はトリス(オクチルアミン)銅(II)ホルマート、0.25~10重量%の高分子バインダー及び少なくとも一種の有機溶媒の残部で構成されるフレーク非含有のプリント可能な組成物、ここで、全ての重量は前記組成物の総重量に基づく;
から選択される分子インクをプリントして前記基板上に前記分子インクのトレースを形成する工程と、
前記分子インクの前記トレースを熱成形して、線幅が160μmの細さである熱成形トレースを生成する工程であって、前記分子インクの前記トレースが50%超の歪みを受ける工程と、
前記熱成形トレースを焼結して、前記導電性金属トレースを生成する工程と、を含む方法。 - 前記基板が、3D形状に成型された熱成形可能な基板である、請求項9に記載の方法。
- 前記熱成形可能な基板は、グリコール変性ポリエチレンテレフタラート(PETG)及びポリカーボネートから選択される、請求項10に記載の方法。
- 前記熱成形可能な基板は成形され、かつそれによりインモールド電子回路を生成する、請求項10に記載の方法。
- 前記分子インクの前記トレースが、伸縮可能である、請求項9に記載の方法。
- 前記導電性金属トレースが、コプレーナ導波路、極超短波RFアンテナ、極超短波RFフィルタ及びハイブリッドRFデバイスのうちの少なくとも一つを形成するためにプリントされる、請求項9に記載の方法。
- 前記導電性金属トレースが、周波数選択性RFフィルタリング、反射又は配向用のエンジニア加工面の少なくとも一つを形成するためにプリントされる、請求項9に記載の方法。
- 前記導電性金属トレースが、少なくとも透明電極を形成するためにプリントされる、請求項9に記載の方法。
- 前記導電性金属トレースが、少なくともウェアラブル電子デバイス又はインモールド電子デバイスを形成するためにプリントされる、請求項9に記載の方法。
- 前記導電性金属トレースが、少なくとも透明導電膜を形成するためにプリントされる、請求項9に方法。
- 前記透明導電膜が、プリント容量性又は抵抗性素子を含む、請求項18に記載の方法。
- 前記透明導電膜が、プリント銀電極のグリッド又はパターンを含む、請求項18に記載の方法。
- 前記基板が、柔軟性を有する、請求項9に記載の方法。
- 前記導電性金属トレースをレーザートリミングすることにより容量性微細ワイヤを作製することを含む、請求項9に記載の方法。
- 前記導電性金属トレースを選択的に焼結することを更に含む、請求項22に記載の方法。
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