JP7177949B2 - 半導体デバイスにおけるパラメタ安定位置ずれ計測改善 - Google Patents

半導体デバイスにおけるパラメタ安定位置ずれ計測改善 Download PDF

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JP7177949B2
JP7177949B2 JP2021556496A JP2021556496A JP7177949B2 JP 7177949 B2 JP7177949 B2 JP 7177949B2 JP 2021556496 A JP2021556496 A JP 2021556496A JP 2021556496 A JP2021556496 A JP 2021556496A JP 7177949 B2 JP7177949 B2 JP 7177949B2
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misalignment
parameter
measurement
stable
wafer
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JP2022526748A (ja
JPWO2020190318A5 (enExample
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ヴラディミール レヴィンスキー
ユーリ パスコバー
シャロン アーロン
アムノン マナッセン
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KLA Corp
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KLA Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2021556496A 2019-03-21 2019-08-23 半導体デバイスにおけるパラメタ安定位置ずれ計測改善 Active JP7177949B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962821596P 2019-03-21 2019-03-21
US62/821,596 2019-03-21
PCT/US2019/047797 WO2020190318A1 (en) 2019-03-21 2019-08-23 Parameter-stable misregistration measurement amelioration in semiconductor devices

Publications (3)

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JP2022526748A JP2022526748A (ja) 2022-05-26
JPWO2020190318A5 JPWO2020190318A5 (enExample) 2022-08-25
JP7177949B2 true JP7177949B2 (ja) 2022-11-24

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Country Link
US (1) US11101153B2 (enExample)
JP (1) JP7177949B2 (enExample)
KR (1) KR102509764B1 (enExample)
CN (1) CN113574643B (enExample)
TW (1) TWI845639B (enExample)
WO (1) WO2020190318A1 (enExample)

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Publication number Priority date Publication date Assignee Title
CN115380367B (zh) 2020-04-05 2025-05-13 科磊股份有限公司 用于校正晶片倾斜对偏移测量的影响的系统及方法
US12165930B2 (en) 2021-06-03 2024-12-10 Kla Corporation Adaptive modeling misregistration measurement system and method
TWI833185B (zh) * 2022-01-04 2024-02-21 南亞科技股份有限公司 疊置誤差的校正方法及半導體元件的製備方法
US12002765B2 (en) 2022-01-04 2024-06-04 Nanya Technology Corporation Marks for overlay measurement and overlay error correction
US11796924B2 (en) 2022-01-04 2023-10-24 Nanya Technology Corporation Method for overlay error correction and method for manufacturing a semiconductor device structure with overlay marks
US12487533B2 (en) 2024-01-25 2025-12-02 Kla Corporation Amplitude asymmetry measurements in overlay metrology

Citations (3)

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Publication number Priority date Publication date Assignee Title
WO2003043064A1 (fr) 2001-11-14 2003-05-22 Tokyo Electron Limited Dispositif de controle d'un substrat, dispositif de revetement/mise au point, et dispositif de controle d'un substrat
JP2005529488A (ja) 2002-06-05 2005-09-29 ケーエルエー−テンカー テクノロジィース コーポレイション 向上された自動プロセス制御のためのオーバレイ診断の利用
JP2010538474A (ja) 2007-08-31 2010-12-09 ケーエルエー−テンカー・コーポレーション ウエハの領域全体の半導体パラメータを予測するための装置および方法

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US6281027B1 (en) * 1999-09-15 2001-08-28 Therma-Wave Inc Spatial averaging technique for ellipsometry and reflectometry
US6462818B1 (en) 2000-06-22 2002-10-08 Kla-Tencor Corporation Overlay alignment mark design
JP4072465B2 (ja) * 2003-06-19 2008-04-09 キヤノン株式会社 位置検出方法
WO2005098686A2 (en) * 2004-04-02 2005-10-20 Clear Shape Technologies, Inc. Modeling resolution enhancement processes in integrated circuit fabrication
US20070099097A1 (en) * 2005-11-03 2007-05-03 Samsung Electronics Co., Ltd. Multi-purpose measurement marks for semiconductor devices, and methods, systems and computer program products for using same
CN101063661B (zh) * 2006-04-29 2010-05-12 中芯国际集成电路制造(上海)有限公司 利用微影区域迭对测量仪监控硅单晶外延层层错状况的方法
TWI416096B (zh) 2007-07-11 2013-11-21 Nova Measuring Instr Ltd 用於監控圖案化結構的性質之方法及系統
US8214771B2 (en) * 2009-01-08 2012-07-03 Kla-Tencor Corporation Scatterometry metrology target design optimization
JP6106743B2 (ja) 2013-02-20 2017-04-05 株式会社日立ハイテクノロジーズ パターン測定装置、及び半導体計測システム
US10296554B2 (en) * 2013-03-01 2019-05-21 Nanometrics Incorporated Correction of angular error of plane-of-incidence azimuth of optical metrology device
CN103398666B (zh) * 2013-05-27 2015-12-23 电子科技大学 一种用于双层周期性微结构的层间错位测试方法
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WO2015031337A1 (en) * 2013-08-27 2015-03-05 Kla-Tencor Corporation Removing process-variation-related inaccuracies from scatterometry measurements
US10152654B2 (en) * 2014-02-20 2018-12-11 Kla-Tencor Corporation Signal response metrology for image based overlay measurements
TWI755987B (zh) * 2015-05-19 2022-02-21 美商克萊譚克公司 具有用於疊對測量之形貌相位控制之光學系統
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WO2003043064A1 (fr) 2001-11-14 2003-05-22 Tokyo Electron Limited Dispositif de controle d'un substrat, dispositif de revetement/mise au point, et dispositif de controle d'un substrat
JP2005529488A (ja) 2002-06-05 2005-09-29 ケーエルエー−テンカー テクノロジィース コーポレイション 向上された自動プロセス制御のためのオーバレイ診断の利用
JP2010538474A (ja) 2007-08-31 2010-12-09 ケーエルエー−テンカー・コーポレーション ウエハの領域全体の半導体パラメータを予測するための装置および方法

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US20210020480A1 (en) 2021-01-21
TWI845639B (zh) 2024-06-21
CN113574643A (zh) 2021-10-29
JP2022526748A (ja) 2022-05-26
TW202043750A (zh) 2020-12-01
CN113574643B (zh) 2024-12-03
KR20210134045A (ko) 2021-11-08
WO2020190318A1 (en) 2020-09-24
KR102509764B1 (ko) 2023-03-14
US11101153B2 (en) 2021-08-24

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