JP7175186B2 - Separation layer-forming composition, support base with separation layer, laminate, method for producing same, and method for producing electronic component - Google Patents

Description

TECHNICAL FIELD The present invention relates to a composition for forming a separation layer, a supporting substrate with a separation layer, a laminate, a method for producing the same, and a method for producing an electronic component.

Semiconductor packages (electronic components) containing semiconductor elements come in various forms according to their sizes, such as WLPs (Wafer Level Packages) and PLPs (Panel Level Packages).
Semiconductor package technologies include fan-in technology and fan-out technology. Fan-in WLP (Fan-in Wafer Level Package), etc., in which terminals at the edge of a bare chip are rearranged within the chip area, are known as semiconductor packages based on fan-in technology. Fan-out WLP (Fan-out Wafer Level Package) in which the terminals are rearranged outside the chip area is known as a semiconductor package based on the fan-out technology.

In recent years, in particular, fan-out technology has been applied to fan-out PLPs (Fan-out Panel Level Packages), in which semiconductor elements are arranged on a panel for packaging. It is attracting attention as a method that can realize thinning and miniaturization.

In order to reduce the size of the semiconductor package, it is important to reduce the thickness of the substrate in which the elements are incorporated. However, when the thickness of the substrate is reduced, the strength of the substrate is lowered, and the substrate tends to be damaged during the manufacture of the semiconductor package. On the other hand, a laminate in which a supporting substrate is attached to a substrate is employed.
In Patent Document 1, a light-transmitting supporting substrate and a substrate are bonded together via a photothermal conversion layer (separation layer) and an adhesive layer provided on the supporting substrate side, and after the substrate is processed, the supporting substrate Disclosed is a method for producing a laminate by separating a processed substrate from a supporting substrate by irradiating the separation layer with radiant energy (light) from the side to degrade and decompose the separation layer. .

JP-A-2004-64040

As described in Patent Literature 1, when miniaturizing a semiconductor package by adopting a laminate in which a supporting substrate is bonded to a substrate, separation of the supporting substrate from the laminate poses a problem.
The present invention has been made in view of the above circumstances, and provides a laminate having a separation layer between a supporting substrate and a substrate, wherein photoreactivity is enhanced to improve separation of the supporting substrate from the laminate. An object of the present invention is to provide a composition for forming a separation layer capable of forming a good separation layer, a supporting substrate with a separation layer using the composition, a laminate, a method for producing the same, and a method for producing an electronic component.

In order to solve the above problems, the present invention employs the following configurations.
That is, in a first aspect of the present invention, a laminate having a separation layer between a support substrate transmitting light and a substrate is changed in quality by irradiation of light from the support substrate side, and the laminate is A separation layer-forming composition for forming the separation layer that enables the separation of the support substrate from the body, the composition containing a resin component (P) having a repeating unit represented by the following general formula (p1): A composition for forming a separation layer characterized by:

［式中、Ｌ^Ｐ１は、芳香環を含む２価の連結基を表す。Ｒ^Ｐ１は有機基を表す。］

[In the formula, ^LP1 represents a divalent linking group containing an aromatic ring. R ^P1 represents an organic group. ]

A second aspect of the present invention comprises a support substrate and a separation layer formed on the support substrate using the separation layer forming composition according to the first aspect. It is a supporting substrate with a separation layer.

A third aspect of the present invention is a laminate comprising a separation layer between a light-transmitting support base and a substrate, wherein the separation layer is for forming the separation layer according to the first aspect. A laminate characterized by being a sintered body of a composition.

A fourth aspect of the present invention is a method for producing a laminate having a separation layer between a light-transmitting support base and a substrate, wherein at least one of the substrate and the support base includes: a separation layer forming step of forming the separation layer by applying the separation layer forming composition according to the first aspect and then baking it, and separating the substrate and the support base through the separation layer; and a lamination step of laminating.

In a fifth aspect of the present invention, after obtaining a laminate by the method for producing a laminate according to the fourth aspect, the separation layer is irradiated with light through the supporting substrate to alter the separation layer. and a removing step of removing the separation layer adhering to the substrate after the separation step. manufacturing method.

According to the present invention, in a laminate having a separation layer between a support substrate and a substrate, a separation layer can be formed that has enhanced photoreactivity and improves separation of the support substrate from the laminate. It is possible to provide a forming composition, a support substrate with a separation layer using the same, a laminate, a method for producing the same, and a method for producing an electronic component.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram which shows one Embodiment of the laminated body to which this invention is applied. BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic process drawing explaining one Embodiment of the manufacturing method of a laminated body. FIG. 2(a) is a diagram for explaining the separation layer forming process, and FIG. 2(b) is a diagram for explaining the stacking process. It is a schematic process drawing explaining other embodiment of the manufacturing method of a laminated body. FIG. 3(a) is a diagram showing a laminate manufactured by the manufacturing method of the first embodiment, and FIG. 3(b) is a diagram for explaining the sealing process. It is a schematic process drawing explaining other embodiment of the manufacturing method of a laminated body. FIG. 4(a) is a diagram showing a sealing body manufactured by the manufacturing method of the second embodiment, FIG. 4(b) is a diagram for explaining the grinding process, and FIG. It is a figure explaining a wiring formation process. It is a schematic process drawing explaining one Embodiment of the manufacturing method of a semiconductor package (electronic component). FIG. 5(a) is a diagram showing a laminate manufactured by the manufacturing method of the third embodiment, FIG. 5(b) is a diagram for explaining the separation step, and FIG. 5(c) is a diagram for removing It is a figure explaining a process. It is a schematic process drawing explaining other embodiment of the manufacturing method of a semiconductor package (electronic component). FIG. 6(a) is a schematic diagram showing another embodiment of a laminate to which the present invention is applied, FIG. 6(b) is a diagram for explaining a separation step, and FIG. 6(c) is a diagram for removing It is a figure explaining a process.

In the present specification and claims, "aliphatic" is defined relative to aromatic to mean groups, compounds, etc. that do not possess aromatic character.
"Alkyl group" includes linear, branched and cyclic monovalent saturated hydrocarbon groups unless otherwise specified. The same applies to the alkyl group in the alkoxy group.
Unless otherwise specified, the "alkylene group" includes straight-chain, branched-chain and cyclic divalent saturated hydrocarbon groups.
A "halogenated alkyl group" is a group in which some or all of the hydrogen atoms of an alkyl group are substituted with halogen atoms, and the halogen atoms include fluorine, chlorine, bromine and iodine atoms.
A "fluorinated alkyl group" refers to a group in which some or all of the hydrogen atoms in an alkyl group have been substituted with fluorine atoms.
A "repeating unit" means a monomer unit (monomer unit) that constitutes a polymer compound (resin, polymer, copolymer).
When describing "optionally having a substituent", when replacing a hydrogen atom (-H) with a monovalent group, and when replacing a methylene group (-CH ₂ -) with a divalent group and both.

The concept of "styrene" includes styrene and those in which the α-position hydrogen atom of styrene is substituted with another substituent such as an alkyl group or a halogenated alkyl group. In addition, the α-position (the carbon atom at the α-position) refers to the carbon atom to which the benzene ring is bonded, unless otherwise specified.

The alkyl group as the α-position substituent is preferably a linear or branched alkyl group, and specifically, an alkyl group having 1 to 5 carbon atoms (methyl group, ethyl group, propyl group, isopropyl group , n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group) and the like.
Further, the halogenated alkyl group as a substituent at the α-position specifically includes a group in which some or all of the hydrogen atoms in the above "alkyl group as a substituent at the α-position" are substituted with halogen atoms. be done. The halogen atom includes a fluorine atom, a chlorine atom, a bromine atom, an iodine atom and the like, and a fluorine atom is particularly preferred.

In the present specification and claims, some structures represented by chemical formulas may have asymmetric carbon atoms and may have enantiomers or diastereomers. In that case, one chemical formula represents those isomers. Those isomers may be used singly or as a mixture.

(Composition for forming separation layer)
The composition for forming a separation layer according to the first aspect of the present invention is a laminate having a separation layer between a light-transmitting supporting substrate and a substrate. It is for forming the separation layer that changes in quality to allow the support substrate to be separated from the laminate. The separation layer-forming composition of the present embodiment contains at least a resin component (P) having a repeating unit represented by general formula (p1).

FIG. 1 shows one embodiment of a laminate to which the present invention is applied.
A laminate 10 shown in FIG. They are stacked in this order.
The support base 1 is made of a material that transmits light. In the laminate 10 , the separation layer 2 is degraded and decomposed by irradiating the separation layer 2 with light from the supporting substrate 1 side, so that the supporting substrate 1 is separated from the laminate 10 .
The separation layer 2 in this laminate 10 can be formed using the separation layer forming composition of the present embodiment.

<Resin component (P)>
The resin component (P) (hereinafter also referred to as “(P) component”) is a resin component having a repeating unit represented by the following general formula (p1).
Since the component (P) has a divalent linking group (L ^P1 ) containing an aromatic ring in the repeating unit, the light absorbability is enhanced and the photoreactivity is excellent. Therefore, the (P) component is likely to be altered (oxidized, etc.) by heating or the like.
In the laminate 10 having the separation layer 2 formed using the separation layer-forming composition containing the component (P), the separation layer 2 is denatured by the irradiation of light from the supporting substrate 1 side, and the substrate is formed. It is easily peeled off from 4 and the supporting substrate 1 is separated. In addition, when the separation layer 2 containing the component (P) is peeled off from the substrate 4 , it leaves little residue (residue) on the substrate 4 and is easily removed from the substrate 4 . In addition, the component (P) has a divalent linking group (L ^P1 ) containing an aromatic ring in the repeating unit, thereby enhancing heat resistance and also having high chemical resistance.

［式中、Ｌ^Ｐ１は、芳香環を含む２価の連結基を表す。Ｒ^Ｐ１は有機基を表す。］

[In the formula, ^LP1 represents a divalent linking group containing an aromatic ring. R ^P1 represents an organic group. ]

In formula (p1), the aromatic ring included in the divalent linking group in L ^P1 is not particularly limited as long as it is a cyclic conjugated system having 4n+2 π electrons, and may be monocyclic or polycyclic. The aromatic ring preferably has 5 to 30 carbon atoms, more preferably 5 to 20 carbon atoms, still more preferably 6 to 15 carbon atoms, and particularly preferably 6 to 12 carbon atoms. Specific examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene; mentioned. The heteroatom in the aromatic heterocycle includes oxygen atom, sulfur atom, nitrogen atom and the like. Specific examples of aromatic heterocycles include pyridine rings and thiophene rings.
The number of aromatic rings contained in the divalent linking group may be one, or two or more, and two or more are preferable because they are more excellent in photoreactivity.

The divalent linking group in L ^P1 may contain multiple types of aromatic rings, or may contain a ring structure in which an aromatic ring and an aliphatic ring are condensed. In addition, the divalent linking group in L ^P1 may contain multiple types of aromatic rings.

The divalent linking group in L ^P1 is preferably a divalent linking group containing a hetero atom. L ^p1 includes linking groups into which various skeletons are introduced in order to impart desired properties.
Examples of the skeleton in the above-mentioned "connecting group into which various skeletons are introduced" include naphthalene skeleton, anthracene skeleton, xanthene skeleton, fluorene skeleton, bisphenol A skeleton and the like.

Examples of L ^p1 include a bisphenol ether bond group, a diol ether bond group, a dicarboxylic acid ester bond group, a Si—O bond group, or a repeating structure of these bond groups.

Examples of the bisphenols include bisphenol F, bisphenol A, bisphenol Z, biphenol, and polymers thereof.
Examples of the diols include ethylene glycol, propylene glycol, 1,6-hexanediol, neopentyl glycol, naphthalenediol (dihydroxynaphthalene), anthracenediol (dihydroxyanthracene), 2,2-bis(4-hydroxyphenyl)propane, or These polymers etc. are mentioned.
Examples of the dicarboxylic acids include maleic acid, phthalic acid, hydrogenated phthalic acid, and terephthalic acid.

When an ether bond group of bisphenols is selected as L ^p1 , the flexibility of the component (P) film is likely to be enhanced.
When an ether bond group of diols is selected as L ^p1 , the alkali solubility of the component (P) can be easily adjusted. Glycol skeletons include, for example, propylene glycol skeletons.
When an Si—O bond group is selected as L ^p1 , it becomes easier to reduce the dielectric of the (P) component compact.

Preferable specific examples of L ^P1 (a divalent linking group containing an aromatic ring) in the formula (p1) are shown below. In the following formulas, * indicates a bond that bonds to a methylene group (CH ₂ ).

In formula (p1), the organic group in R ^{1 P1} is not particularly limited, and examples thereof include a hydrocarbon group which may have a substituent.
The hydrocarbon group in R ^P1 includes a linear or branched alkyl group, a chain or cyclic alkenyl group, or a cyclic hydrocarbon group.

The linear alkyl group in R ^P1 preferably has 1 to 5 carbon atoms. Specific examples of R ^P1 include a methyl group, an ethyl group, an n-propyl group, an n-butyl group, and an n-pentyl group.
The branched alkyl group in R ^P1 preferably has 3 to 10 carbon atoms, more preferably 3 to 5 carbon atoms. Specific examples of R ^P1 include isopropyl group, isobutyl group, tert-butyl group, isopentyl group, neopentyl group, 1,1-diethylpropyl group, 2,2-dimethylbutyl group and the like.

The chain or cyclic alkenyl group in R ^P1 is preferably an alkenyl group having 2 to 10 carbon atoms.

The cyclic hydrocarbon group in R ^P1 may be an aliphatic hydrocarbon group, an aromatic hydrocarbon group, a polycyclic group, or a monocyclic group.
As a monocyclic aliphatic hydrocarbon group, a group obtained by removing one hydrogen atom from a monocycloalkane is preferable. The monocycloalkane preferably has 3 to 6 carbon atoms, and specific examples include cyclopentane and cyclohexane.
The aliphatic hydrocarbon group which is a polycyclic group is preferably a group obtained by removing one hydrogen atom from a polycycloalkane, and the polycycloalkane preferably has 7 to 12 carbon atoms, specifically includes adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane and the like.

The aromatic hydrocarbon group in R ^P1 is a hydrocarbon group having at least one aromatic ring. This aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n+2 π electrons, and may be monocyclic or polycyclic. The aromatic ring preferably has 5 to 30 carbon atoms, more preferably 5 to 20 carbon atoms, still more preferably 6 to 15 carbon atoms, and particularly preferably 6 to 12 carbon atoms. Specific examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene; mentioned. The heteroatom in the aromatic heterocycle includes oxygen atom, sulfur atom, nitrogen atom and the like. Specific examples of aromatic heterocycles include pyridine rings and thiophene rings. Specifically, the aromatic hydrocarbon group includes a group obtained by removing one hydrogen atom from the aromatic hydrocarbon ring or aromatic heterocyclic ring (aryl group or heteroaryl group); A group obtained by removing one hydrogen atom from a group compound (e.g., biphenyl, fluorene, etc.); A group in which one of the hydrogen atoms of the aromatic hydrocarbon ring or aromatic heterocycle is substituted with an alkylene group (e.g., benzyl group, phenethyl arylalkyl groups such as groups, 1-naphthylmethyl groups, 2-naphthylmethyl groups, 1-naphthylethyl groups, 2-naphthylethyl groups, etc.). The number of carbon atoms in the alkylene group bonded to the aromatic hydrocarbon ring or aromatic heterocyclic ring is preferably 1 to 4, more preferably 1 to 2, and particularly 1. preferable.

When the hydrocarbon group represented by R ^P1 above is substituted, examples of the substituent include a hydroxy group, a carboxy group, a halogen atom (fluorine atom, chlorine atom, bromine atom, etc.), an alkoxy group (methoxy group, ethoxy group, propoxy group, butoxy group, etc.), alkyloxycarbonyl group, and the like.
Further, the hydrocarbon group represented by R ^P1 may have an ether bond in the middle of the hydrocarbon chain.

Preferred specific examples of the repeating unit represented by formula (p1) are shown below.

The component (P) has film-forming ability and preferably has a molecular weight of 1,000 or more. When the molecular weight of the component (P) is 1,000 or more, the film-forming ability is improved. The molecular weight of component (P) is more preferably 1,000 to 30,000, more preferably 1,500 to 25,000, particularly preferably 1,500 to 20,000, and most preferably 2,000 to 15,000.
When the molecular weight of the component (P) is equal to or less than the upper limit of the preferred range, the solubility of the composition for forming a separation layer in a solvent is enhanced.
As the molecular weight of the resin component, the weight average molecular weight (Mw) converted to polystyrene by GPC (gel permeation chromatography) is used.

As the component (P), for example, the GSP series (manufactured by Gun Ei Chemical Industry Co., Ltd.) with trade names of GSP-01, GSP-02, GSP-03 and GSP-106 can be used.

Also, as the component (P), a resin produced by reacting aminophenols, aminonaphthols or anilines with a compound having two epoxy groups in one molecule can be used.
Aminophenols include 2-aminophenol, 3-aminophenol, 4-aminophenol, 4-amino-3-methylphenol, 2-amino-4-methylphenol, 3-amino-2-methylphenol, 5- Amino-2-methylphenol and the like can be mentioned. Aminonaphthols include 1-amino-2-naphthol, 3-amino-2-naphthol, 5-amino-1-naphthol and the like.
Examples of compounds having two epoxy groups in one molecule include bisphenol-type epoxy resins such as EPICLON850, EPICLON830 (manufactured by DIC Corporation) and jERYX-4000 (manufactured by Mitsubishi Chemical Corporation); DENACOL EX-211; Diol type epoxy resins such as DENACOL EX-212, DENACOL EX-810, DENACOL EX-830, DENACOL EX-911, DENACOL EX-920, DENACOL EX-930 (manufactured by Nagase ChemteX Corporation); DENACOL EX-711, DENACOL EX-721 (manufactured by Nagase ChemteX Corporation), dicarboxylic acid ester type epoxy resin such as jER191P (manufactured by Mitsubishi Chemical Corporation); X-22-163, KF-105 (manufactured by Shin-Etsu Chemical Co., Ltd.) and other silicone type An epoxy resin etc. are mentioned.
The heat treatment temperature for this reaction is preferably 60° C. or higher and 250° C. or lower, more preferably 80° C. or higher and 180° C. or lower.

The component (P) contained in the separation layer-forming composition of the present embodiment may be one kind or two or more kinds.

The content of the component (P) in the separation layer-forming composition of the present embodiment may be adjusted according to the thickness of the separation layer to be formed.
The content of the component (P) in the separation layer-forming composition is, for example, preferably 1 to 100% by mass, more preferably 1 to 70% by mass, based on the composition (100% by mass). ~50% by mass is more preferable, and 10 to 50% by mass is particularly preferable.
When the content of component (P) is at least the lower limit of the preferred range, the photoreactivity of the separation layer can be more easily enhanced. In addition, it becomes easy to improve chemical resistance. On the other hand, if it is at most the upper limit of the preferred range, photoreactivity and peelability can be more easily enhanced.

<Other ingredients>
The separation layer-forming composition of the present embodiment may further contain components (optional components) other than the component (P) described above.
Examples of such optional components include resins other than component (P) shown below, thermal acid generator components, photoacid generator components, photosensitive agent components, organic solvent components, surfactants, sensitizers, and the like.

The separation layer-forming composition of the present embodiment may contain a resin other than the component (P) within a range that does not impair the effects of the present invention.
Examples of resins other than the component (P) include novolac-type phenolic resins, resol-type phenolic resins, hydroxystyrene resins, hydroxyphenylsilsesquioxane resins, hydroxybenzylsilsesquioxane resins, phenol skeleton-containing acrylic resins, and the like. be done.
By using a novolac-type phenolic resin as a resin other than the component (P) together with the component (P), the generation of voids due to heating can be easily suppressed.

≪Thermal acid generator≫
The separation layer-forming composition of the present embodiment preferably further contains a thermal acid generator (hereinafter also referred to as "component (T)").
When such a composition for forming a separation layer contains the (T) component, oxidation of the separation layer is promoted by the action of the acid generated from the (T) component during heating during firing. It becomes easy to degrade (the photoreactivity of the separation layer is enhanced).

The component (T) can be appropriately selected from known ones and used, and the temperature for generating acid is equal to or higher than the temperature for pre-baking the supporting substrate coated with the separation layer-forming composition. , more preferably 110° C. or higher, and even more preferably 130° C. or higher.
Examples of such component (T) include trifluoromethanesulfonate, hexafluorophosphate, perfluorobutanesulfonate, boron trifluoride salt, and boron trifluoride ether complex. Preferred (T) components include the following compounds consisting of a cation moiety and an anion moiety.

［式（Ｔ－ｃａ－１）中、Ｒ^ｈ０１～Ｒ^ｈ０４は、それぞれ独立して、水素原子、炭素数１～２０のアルキル基及びアリール基からなる群より選択される基であり、Ｒ^ｈ０１～Ｒ^ｈ０４のうちの少なくとも１つは、アリール基である。前記のアルキル基又はアリール基は、置換基を有していてもよい。式（Ｔ－ｃａ－２）中、Ｒ^ｈ０５～Ｒ^ｈ０７は、それぞれ独立して、炭素数１～２０のアルキル基及びアリール基からなる群より選択される基であり、Ｒ^ｈ０５～Ｒ^ｈ０７のうちの少なくとも１つは、アリール基である。前記のアルキル基又はアリール基は、置換基を有していてもよい。］

[In the formula (T-ca-1), R ^h01 to R ^h04 are each independently a group selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 20 carbon atoms and an aryl group, and R ^h01 At least one of ~R ^h04 is an aryl group. The above alkyl group or aryl group may have a substituent. In formula (T-ca-2), R ^h05 to R ^h07 are each independently a group selected from the group ^consisting of an alkyl group having 1 to 20 carbon atoms and an aryl group ^; At least one of them is an aryl group. The above alkyl group or aryl group may have a substituent. ]

- About the cation moiety of the component (T) In the formula (T-ca-1), the alkyl group represented by R ^h01 to R ^h04 has 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, and 1 carbon atom. to 5 are more preferred, and straight or branched chain alkyl groups having 1 to 5 carbon atoms are even more preferred. Specific examples include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group and the like. Ethyl groups are preferred.

The alkyl groups in R ^h01 to R ^h04 may have a substituent. Examples of this substituent include an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group, an amino group, and a cyclic group.

The alkoxy group as a substituent of the alkyl group is preferably an alkoxy group having 1 to 5 carbon atoms, more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group and a tert-butoxy group. , methoxy group and ethoxy group are more preferred.
A halogen atom as a substituent of an alkyl group includes a fluorine atom, a chlorine atom, a bromine atom, an iodine atom and the like, and a fluorine atom is preferable.
Halogenated alkyl groups as substituents of alkyl groups include alkyl groups having 1 to 5 carbon atoms, such as methyl, ethyl, propyl, n-butyl and tert-butyl groups, and some or all of the hydrogen atoms. is substituted with the halogen atom.
A carbonyl group as a substituent of an alkyl group is a group (>C=O) that substitutes a methylene group ₍ --CH.sub.2--) constituting the alkyl group.
Cyclic groups as substituents of alkyl groups include aromatic hydrocarbon groups and alicyclic hydrocarbon groups (which may be polycyclic or monocyclic). Examples of the aromatic hydrocarbon group here include those similar to the aryl group for R ^h01 to R ^h04 described later. In the alicyclic hydrocarbon group here, the monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a monocycloalkane. The monocycloalkane preferably has 3 to 6 carbon atoms, and specific examples include cyclopentane and cyclohexane. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a polycycloalkane, and the polycycloalkane preferably has 7 to 30 carbon atoms. Among them, the polycycloalkanes include polycycloalkanes having a bridged ring system polycyclic skeleton such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane; condensed ring systems such as cyclic groups having a steroid skeleton; Polycycloalkanes having a polycyclic skeleton of are more preferred.

In the formula (T-ca-1), the aryl group in R ^h01 to R ^h04 is a hydrocarbon group having at least one aromatic ring.
This aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n+2 π electrons, and may be monocyclic or polycyclic. The aromatic ring preferably has 5 to 30 carbon atoms, more preferably 5 to 20 carbon atoms, still more preferably 6 to 15 carbon atoms, and particularly preferably 6 to 12 carbon atoms.
Specific examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene; mentioned. The heteroatom in the aromatic heterocycle includes oxygen atom, sulfur atom, nitrogen atom and the like. Specific examples of aromatic heterocycles include pyridine rings and thiophene rings.
Specific examples of the aryl group for R ^h01 to R ^h04 include groups obtained by removing one hydrogen atom from the above aromatic hydrocarbon ring or aromatic heterocyclic ring; aromatic compounds containing two or more aromatic rings (for example, biphenyl , fluorene, etc.) from which one hydrogen atom has been removed; a group in which one of the hydrogen atoms in the aromatic hydrocarbon ring or aromatic heterocyclic ring is substituted with an alkylene group (e.g., benzyl group, phenethyl group, 1- arylalkyl groups such as naphthylmethyl group, 2-naphthylmethyl group, 1-naphthylethyl group, 2-naphthylethyl group, etc.). The number of carbon atoms in the alkylene group bonded to the aromatic hydrocarbon ring or aromatic heterocyclic ring is preferably 1 to 4, more preferably 1 to 2, and particularly preferably 1. Among these, a group in which one hydrogen atom is removed from the aromatic hydrocarbon ring or aromatic heterocyclic ring, and one hydrogen atom of the aromatic hydrocarbon ring or aromatic heterocyclic ring is substituted with an alkylene group is more preferable, and more preferable is a group obtained by removing one hydrogen atom from the aromatic hydrocarbon ring, and a group obtained by substituting one of the hydrogen atoms of the aromatic hydrocarbon ring with an alkylene group.

The aryl groups in R ^h01 to R ^h04 may have a substituent. Examples of this substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group, an amino group, a cyclic group, and an alkylcarbonyloxy group.

The alkyl group as a substituent of the aryl group is preferably an alkyl group having 1 to 5 carbon atoms, and is preferably a methyl group, ethyl group, propyl group, n-butyl group or tert-butyl group.
The alkoxy group, halogen atom, halogenated alkyl group, carbonyl group, and cyclic group as substituents of the aryl group are described with reference to the alkoxy group, halogen atom, halogenated alkyl group, carbonyl It is the same as the explanation of the group and the cyclic group.
In the alkylcarbonyloxy group as a substituent of the aryl group, the alkyl portion preferably has 1 to 5 carbon atoms, and the alkyl portion includes a methyl group, an ethyl group, a propyl group, an isopropyl group, and the like. , an ethyl group is preferred, and a methyl group is more preferred.

However, in the formula (T-ca-1), at least one of R ^h01 to R ^h04 is an optionally substituted aryl group.
Specific examples of the cation represented by the formula (T-ca-1) are shown below.

In the formula (T-ca-2), the alkyl group and aryl group for R ^h05 to R ^h07 are the same as the alkyl group and aryl group for R ^h01 to R ^h04 described above.

However, in the formula (T-ca-2), at least one of R ^h05 to R ^h07 is an aryl group which may have a substituent.
Specific examples of the cation represented by the formula (T-ca-2) are shown below.

The anion portion of the component (T) Examples of the anion portion of the component (T) include hexafluorophosphate anion, trifluoromethanesulfonate anion, perfluorobutanesulfonate anion, and tetrakis(pentafluorophenyl)borate anion. etc.
Among these, hexafluorophosphate anions, trifluoromethanesulfonate anions, and perfluorobutanesulfonate anions are preferred, and hexafluorophosphate anions and trifluoromethanesulfonate anions are more preferred.

In the separation layer-forming composition of the present embodiment, as the component (T), for example, the trade names of San-Aid SI-45, SI-47, SI-60, SI-60L, SI-80, SI-80L, SI- 100, SI-100L, SI-110, SI-110L, SI-145, I-150, SI-160, SI-180L, SI-B3, SI-B2A, SI-B3A, SI-B4, SI-300 ( Above, Sanshin Chemical Industry Co., Ltd.); CI-2921, CI-2920, CI-2946, CI-3128, CI-2624, CI-2639, CI-2064 (manufactured by Nippon Soda Co., Ltd.); CP-66, CP-77 (manufactured by ADEKA Corporation); FC-520 (manufactured by 3M); K-PURE TAG-2396, TAG-2713S, TAG-2713, TAG-2172, TAG-2179, TAG-2168E, TAG-2722, TAG-2507, TAG-2678, TAG-2681, TAG-2679, TAG-2689, TAG-2690, TAG-2700, TAG-2710, TAG-2100, CDX-3027, CXC-1615, CXC-1616, CXC- 1750, CXC-1738, CXC-1614, CXC-1742, CXC-1743, CXC-1613, CXC-1739, CXC-1751, CXC-1766, CXC-1763, CXC-1736, CXC-1756, CXC-1821, CXC-1802-
60, CXC-2689 (manufactured by KING INDUSTRY) and the like can be used.

The component (T) contained in the separation layer-forming composition of the present embodiment may be one kind or two or more kinds.
In the separation layer-forming composition of the present embodiment, among the above, hexafluorophosphate, trifluoromethanesulfonate, and perfluorobutanesulfonate are preferable as the component (T), and trifluoromethanesulfonate is preferable. More preferred are quaternary ammonium salts of trifluoromethanesulfonic acid.
When the composition for forming a separation layer of the present embodiment contains the (T) component, the content of the (T) component is 0.01 to 20 parts by mass with respect to 100 parts by mass of the (P) component. is preferred, 1 to 15 parts by weight is more preferred, and 2 to 10 parts by weight is even more preferred.
If the content of the component (T) is within the above preferable range, it becomes susceptible to alteration by light irradiation (the photoreactivity of the separation layer is enhanced). For example, by sintering, it is possible to easily form a sintered body capable of favorably absorbing light in the wavelength range of 600 nm or less. In addition, chemical resistance is also improved.

≪Photo acid generator≫
The separation layer-forming composition of the present embodiment may further contain a photoacid generator.
Even if such a composition for forming a separation layer contains a photoacid generator, as in the case of containing the component (T) as described above, the action of the acid generated from the photoacid generator during heating during firing, etc. Oxidation of the separation layer is promoted by , so that the separation layer is easily degraded by light irradiation (the photoreactivity of the separation layer is enhanced).
Suitable photoacid generators include, for example, onium salt acid generators such as sulfonium salts.

Preferred cation moieties in the onium salt-based acid generator include sulfonium cations and iodonium cations.

Preferred anion moieties in the onium salt-based acid generator include tetrakis(pentafluorophenyl)borate ([B(C ₆ F ₅ ) ₄ ] ⁻ ); tetrakis[(trifluoromethyl)phenyl]borate ([B(C ₆ H ₄ CF ₃ ) ₄ ] ⁻ ); difluorobis(pentafluorophenyl)borate ([(C ₆ F ₅ ) ₂ BF ₂ ] ⁻ ); trifluoro(pentafluorophenyl)borate ([(C ₆ F ₅ ) BF ₃ ] ⁻ ); tetrakis(difluorophenyl)borate ([B(C ₆ H ₃ F ₂ ) ₄ ] ⁻ ); Anions represented by the following general formula (b0-2a) are also preferred.

［式中、Ｒ^ｂｆ０５は、置換基を有していてもよいフッ素化アルキル基である。ｎｂ^１は、１～５の整数である。］

[In the formula, ^Rbf05 is a fluorinated alkyl group which may have a substituent. nb ¹ is an integer from 1 to 5; ]

In the formula (b0-2a), the fluorinated alkyl group in R ^bf05 preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and 1 to 5 carbon atoms. is more preferred. Among them, R ^bf05 is preferably a fluorinated alkyl group having 1 to 5 carbon atoms, more preferably a perfluoroalkyl group having 1 to 5 carbon atoms, and even more preferably a trifluoromethyl group or a pentafluoroethyl group.
In the formula (b0-2a), nb ¹ is preferably an integer of 1 to 4, more preferably an integer of 2 to 4, and most preferably 3.
When nb ¹ is 2 or more, the plurality of R ^bf05 may be the same or different.

The photoacid generator contained in the separation layer-forming composition of the present embodiment may be one kind or two or more kinds.
When the composition for forming a separation layer of the present embodiment contains a photoacid generator, the content of the photoacid generator is 0.01 to 20 parts by mass with respect to 100 parts by mass of the component (P). is preferred, 1 to 15 parts by weight is more preferred, and 2 to 10 parts by weight is even more preferred.
If the content of the photo-acid generator is within the above preferable range, it is easily deteriorated by light irradiation (the photoreactivity of the separation layer is enhanced). For example, by sintering, it is possible to easily form a sintered body capable of favorably absorbing light in the wavelength range of 600 nm or less. In addition, chemical resistance is also improved.

≪Photosensitizer component≫
Examples of the photosensitive agent component (hereinafter also referred to as "(C) component") include esterification of a phenolic hydroxyl group-containing compound represented by the following chemical formula (c1) and a 1,2-naphthoquinonediazide sulfonic acid compound. A reaction product (hereinafter also referred to as “(C1) component”) is preferred.

Examples of 1,2-naphthoquinonediazide sulfonic acid compounds include 1,2-naphthoquinonediazide-5-sulfonyl compounds and 1,2-naphthoquinonediazide-4-sulfonyl compounds. Compounds are preferred.

Preferred specific examples of the component (C1) are shown below.

［式（ｃ１－１）中、Ｄ^１～Ｄ^４は、それぞれ独立に水素原子、又は１，２－ナフトキノンジアジド－５－スルホニル基を表す。Ｄ^１～Ｄ^４のうち少なくとも１つは、１，２－ナフトキノンジアジド－５－スルホニル基を表す。］

[In formula (c1-1), D ¹ to D ⁴ each independently represent a hydrogen atom or a 1,2-naphthoquinonediazide-5-sulfonyl group. At least one of D ¹ to D ⁴ represents a 1,2-naphthoquinonediazide-5-sulfonyl group. ]

The esterification rate of component (C1) is preferably 50 to 70%, more preferably 55 to 65%. When the esterification rate is 50% or more, film reduction after alkali development is further suppressed, and the residual film rate increases. If the esterification rate is 70% or less, storage stability is further improved.
The term “esterification rate” as used herein refers to the compound represented by formula (c1-1), wherein D ¹ to D ⁴ in formula (c1-1) are 1,2-naphthoquinonediazide-5-sulfonyl Indicates the ratio of substitution with groups.
The component (C1) is preferable because it is very inexpensive and can achieve high sensitivity.

In addition, as the component (C), a photosensitive agent component other than the component (C1) (hereinafter also referred to as "component (C2)") can be used.
Examples of the (C2) component include the following phenolic hydroxyl group-containing compound (component (c2-phe)) and a 1,2-naphthoquinonediazide sulfonic acid compound (preferably a 1,2-naphthoquinonediazide-5-sulfonyl compound). , or 1,2-naphthoquinonediazide-4-sulfonyl compounds).

Examples of the (c2-phe) component include tris(4-hydroxyphenyl)methane, bis(4-hydroxy-3-methylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-2,3,5 -trimethylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-4-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-3-hydroxyphenylmethane , bis(4-hydroxy-3,5-dimethylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-4-hydroxyphenylmethane, bis(4-hydroxy-2,5 -dimethylphenyl)-3-hydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-3,4-dihydroxy phenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-3,4-dihydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-2,4-dihydroxyphenylmethane, bis(4 -hydroxyphenyl)-3-methoxy-4-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-4-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methyl phenyl)-3-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-2-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-3,4 -dihydroxyphenylmethane, bis(2,3,5-trimethyl-4-hydroxyphenyl)-2-hydroxyphenylmethane, 1-[1-(4-hydroxyphenyl)isopropyl]-4-[1,1-bis( 4-hydroxyphenyl)ethyl]benzene, 1-[1-(3-methyl-4-hydroxyphenyl)isopropyl]-4-[1,1-bis(3-methyl-4-hydroxyphenyl)ethyl]benzene, 2 -(2,3,4-trihydroxyphenyl)-2-(2',3',4'-trihydroxyphenyl)propane, 2-(2,4-dihydroxyphenyl)-2-(2',4' -dihydroxyphenyl)propane, 2-(4-hydroxyphenyl)-2 -(4'-hydroxyphenyl)propane, 2-(3-fluoro-4-hydroxyphenyl)-2-(3'-fluoro-4'-hydroxyphenyl)propane, 2-(2,4-dihydroxyphenyl)- 2-(4'-hydroxyphenyl)propane, 2-(2,3,4-trihydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2-(2,3,4-trihydroxyphenyl)- 2-(4'-hydroxy-3',5'-dimethylphenyl)propane, bis(2,3,4-trihydroxyphenyl)methane, bis(2,4-dihydroxyphenyl)methane, 2,3,4- trihydroxyphenyl-4'-hydroxyphenylmethane, 1,1-di(4-hydroxyphenyl)cyclohexane, 2,4-bis[1-(4-hydroxyphenyl)isopropyl]-5-hydroxyphenol and the like.

The component (C) contained in the separation layer-forming composition of the present embodiment may be used alone or in combination of two or more.
In the separation layer-forming composition of the present embodiment, it is preferable to use the component (C1) as the component (C) among the above components.
When the composition for forming a separation layer of the present embodiment contains component (C), the content of component (C) is preferably 95 parts by mass or less with respect to 100 parts by mass of component (P). 50 to 95 parts by mass is more preferable, and 60 to 90 parts by mass is even more preferable.
If the content of the component (C) is within the above preferred range, the photoreactivity of the separation layer is further enhanced.

≪Organic solvent component≫
The separation layer-forming composition of the present embodiment may contain an organic solvent component (hereinafter also referred to as “(S) component”) in order to adjust coating workability and the like.
Component (S) includes, for example, straight-chain hydrocarbons such as hexane, heptane, octane, nonane, methyloctane, decane, undecane, dodecane, and tridecane; branched-chain hydrocarbons having 4 to 15 carbon atoms; , cycloheptane, cyclooctane, naphthalene, decahydronaphthalene, and tetrahydronaphthalene; p-menthane, o-menthane, m-menthane, diphenylmenthane, 1,4-terpine, 1,8-terpine, bornane, norbornane, pinane, thujan, kalan, longifolene, geraniol, nerol, linalool, citral, citronellol, menthol, isomenthol, neomenthol, α-terpineol, β-terpineol, γ-terpineol, terpinen-1-ol, terpinen-4- Terpene solvents such as ol, dihydroterpinyl acetate, 1,4-cineol, 1,8-cineol, borneol, carvone, ionone, thujone, camphor, d-limonene, l-limonene, dipentene; Lactones; ketones such as acetone, methyl ethyl ketone, cyclohexanone (CH), methyl-n-pentyl ketone, methyl isopentyl ketone, 2-heptanone; polyhydric alcohols such as ethylene glycol, diethylene glycol, propylene glycol and dipropylene glycol; Compounds having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate, monomethyl ether, monoethyl ether, and monopropyl of the above polyhydric alcohols or compounds having an ester bond Derivatives of polyhydric alcohols such as compounds having ether bonds such as ethers, monoalkyl ethers such as monobutyl ether, or monophenyl ethers (among these, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME) is preferred); cyclic ethers such as dioxane, methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methoxypropyl acetate, methoxybutyl acetate, methyl pyruvate, ethyl pyruvate, methoxypropion Esters such as methyl acid and ethyl ethoxypropionate; ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenetol, butylphenyl ether, and other aromatic organic solvents.
The (S) component contained in the separation layer-forming composition of the present embodiment may be one kind or two or more kinds.

In the composition for forming a separation layer of the present embodiment, the amount of the component (S) used is not particularly limited, and is appropriately set according to the coating film thickness and coatability at a concentration that can be applied to a supporting substrate or the like. Preferably, the total amount of the component (P) in the separation layer-forming composition is 70% by mass or less, more preferably in the range of 10 to 50% by mass, based on the total mass (100% by mass) of the composition. The (S) component is used so that

≪Surfactant≫
The separation layer-forming composition of the present embodiment may contain a surfactant in order to adjust coating workability and the like.
Examples of surfactants include silicone-based surfactants and fluorine-based surfactants. Examples of silicone surfactants include BYK-077, BYK-085, BYK-300, BYK-301, BYK-302, BYK-306, BYK-307, BYK-310, BYK-320, BYK-322, BYK -323, BYK-325, BYK-330, BYK-331, BYK-333, BYK-335, BYK-341, BYK-344, BYK-345, BYK-346, BYK-348, BYK-354, BYK-355 , BYK-356, BYK-358, BYK-361, BYK-370, BYK-371, BYK-375, BYK-380, BYK-390 (manufactured by BYK Chemie) and the like can be used. Examples of fluorine-based surfactants include F-114, F-177, F-410, F-411, F-450, F-493, F-494, F-443, F-444, F-445, F -446, F-470, F-471, F-472SF, F-474, F-475, F-477, F-478, F-479, F-480SF, F-482, F-483, F-484 , F-486, F-487, F-172D, MCF-350SF, TF-1025SF, TF-1117SF, TF-1026SF, TF-1128, TF-1127, TF-1129, TF-1126, TF-1130, TF -1116SF, TF-1131, TF-1132, TF-1027SF, TF-1441, TF-1442 (manufactured by DIC Corporation); Polyfox series PF-636, PF-6320, PF-656, PF-6520 (manufactured by Omnova Co., Ltd.) and the like can be used.

The surfactant contained in the separation layer-forming composition of the present embodiment may be one or two or more.
When the composition for forming a separation layer of the present embodiment contains a surfactant, the content of the surfactant is preferably 0.01 to 10 parts by mass with respect to 100 parts by mass of component (P). , more preferably 0.02 to 2 parts by mass, more preferably 0.03 to 1 part by mass.
When the content of the surfactant is within the preferred range, a highly flat separation layer can be easily formed when the composition for forming a separation layer is applied onto a support substrate.

(Support substrate with separation layer)
A support substrate with a separation layer according to a second aspect of the present invention comprises a support substrate and a separation layer formed on the support substrate using the separation layer-forming composition according to the first aspect. It is a thing.
The support substrate with a separation layer of the present embodiment comprises a separation layer formed on the support substrate using the separation layer-forming composition of the embodiment described above. Therefore, the support substrate with the separation layer has enhanced photoreactivity and chemical resistance.

<Support base>
The supporting substrate has the property of transmitting light. The support base is a member that supports the substrate, and is attached to the substrate via the separation layer. Therefore, it is preferable that the support base has a strength necessary to prevent damage or deformation of the substrate during thinning of the sealing body, transportation of the substrate, mounting on the substrate, and the like. Moreover, the supporting substrate preferably transmits light having a wavelength capable of altering the properties of the separation layer.
As a material for the supporting substrate, for example, glass, silicon, acrylic resin, or the like is used. Examples of the shape of the support base include, but are not limited to, a rectangular shape, a circular shape, and the like.
In addition, as the support base, a circular support base with an increased size or a large panel having a square shape in top view can be used in order to further increase the density of integration and improve production efficiency.

<Separation layer>
The separation layer can be formed using the separation layer-forming composition of the above-described embodiment, and is composed of a fired body formed by firing the resin component (P) contained in the separation layer-forming composition. layer. This separation layer preferably changes in quality by absorbing the light that is irradiated through the supporting substrate.
The separation layer may be a layer containing a material that does not have a light-absorbing structure as long as the essential characteristics of the present invention are not impaired. Therefore, it is preferable that it is formed only from a material that absorbs light.

The term "fired body" as used herein refers to a body obtained by firing a composition containing the component (P). This sintered body is formed by sintering a composition containing the component (P) in an atmospheric environment, that is, in an environment in which oxygen exists, and at least part of the composition is carbonized. The fired body that constitutes the separation layer in the present embodiment can suitably absorb light in the wavelength range of 600 nm or less, and preferably has high chemical resistance.

The term "alteration" of the separation layer refers to a state in which the separation layer can be destroyed by receiving an external force, or a phenomenon in which the adhesive force between the separation layer and a layer in contact with the separation layer is reduced. The release layer becomes brittle by absorbing light and loses its strength or adhesion prior to exposure to light. Such degeneration of the separation layer occurs due to decomposition, change in configuration, dissociation of functional groups, or the like due to energy of absorbed light.

The thickness of the separation layer is, for example, preferably in the range of 0.05 μm or more and 50 μm or less, and more preferably in the range of 0.3 μm or more and 1 μm or less.
If the thickness of the separation layer is in the range of 0.05 μm or more and 50 μm or less, the desired alteration can be caused in the separation layer by short-time light irradiation and low-energy light irradiation. Moreover, it is particularly preferable that the thickness of the separation layer is within a range of 1 μm or less from the viewpoint of productivity.

For example, in the laminate 10 shown in FIG. 1, the separation layer preferably has a flat surface (no unevenness is formed) on the side in contact with the adhesive layer. , it becomes easy to evenly attach the supporting base and the substrate.

The separation layer-attached support substrate of the present embodiment can be produced by performing the operation of [separation layer forming step] described later in the same manner.

Since the support substrate with a separation layer of the present embodiment is provided with the separation layer to which the composition for forming a separation layer of the above-described embodiment is applied, the photoreactivity is enhanced, and preferably the chemical resistance is also enhanced. It is

(Laminate)
A laminate according to a third aspect of the present invention comprises a separation layer between a light-transmitting support base and a substrate. This separation layer is a fired product of the separation layer forming composition of the above-described embodiment.
As shown in FIG. 1, the laminate 10 of this embodiment is obtained by laminating a separation layer 2, an adhesive layer 3, and a substrate 4 on a supporting substrate 1 in this order.

The explanation of the supporting substrate 1 is the same as the explanation in <Supporting substrate> above.
The explanation of the separation layer 2 is the same as the explanation in <separation layer> above.

<Adhesive layer>
The adhesive layer 3 is a layer for bonding the supporting substrate 1 and the substrate 4 together, and can be formed using a composition for forming an adhesive layer.
Examples of such adhesive layer-forming compositions include those containing other components such as thermoplastic resins, diluents, and additives. The thermoplastic resin may be any one that exhibits adhesive strength, and is one of hydrocarbon resins (preferably cycloolefin polymers, etc.), acryl-styrene resins, maleimide resins, elastomer resins, polysulfone resins, and the like. Alternatively, two or more types can be used. Examples of the diluent include those similar to the above component (S). Other components include additional resins, curable monomers, photopolymerization initiators, plasticizers, adhesion aids, stabilizers, colorants, thermal polymerization inhibitors, surfactants, etc. for improving the performance of the adhesive layer. mentioned.

The thickness of the adhesive layer 3 is, for example, preferably in the range of 0.1 μm or more and 50 μm or less, and more preferably in the range of 1 μm or more and 10 μm or less.
If the thickness of the adhesive layer is within the range of 0.1 μm or more and 50 μm or less, the support base 1 and the substrate 4 can be bonded together more satisfactorily. Further, when the thickness of the adhesive layer is 1 μm or more, the substrate can be sufficiently fixed on the support base, and when the thickness of the adhesive layer is 10 μm or less, the adhesive layer can be removed in the subsequent removal step. Can be easily removed.

<Substrate>
The substrate 4 is subjected to processes such as thinning and mounting while being supported by the support base 1 . Structures such as integrated circuits and metal bumps are mounted on the substrate 4 .
A silicon wafer substrate is typically used as the substrate 4, but it is not limited to this, and a ceramic substrate, a thin film substrate, a flexible substrate, or the like may be used.

In this embodiment, the device is a semiconductor device or other device, and may have a single-layer or multi-layer structure. When the element is a semiconductor element, the electronic component obtained by dicing the sealing substrate becomes a semiconductor device.

Since the laminate of the embodiment described above is provided with the separation layer to which the composition for forming a separation layer of the embodiment described above is applied, the photoreactivity is enhanced (they are suitably altered by light irradiation). Separability of the supporting substrate from the laminate is good.
In addition, since the laminate of the embodiment is provided with the separation layer to which the composition for forming a separation layer of the embodiment is applied, the chemical resistance is enhanced. As a result, the laminate of the embodiment is less likely to be damaged by the effects of chemicals used in etching processing, lithography processing, and the like.

In the laminate of the above embodiment, the supporting substrate 1 and the separation layer 2 are adjacent to each other, but the invention is not limited to this, and another layer is further formed between the supporting substrate 1 and the separation layer 2. may In this case, the other layer may be made of a material that transmits light. According to this, it is possible to appropriately add a layer that imparts preferable properties to the laminate 10 without preventing the incidence of light on the separation layer 2 . The wavelength of light that can be used differs depending on the type of material forming the separation layer 2 . Therefore, the materials constituting the other layers do not need to transmit light of all wavelengths, and can be appropriately selected from materials that transmit light of wavelengths that can alter the quality of the material constituting the separation layer 2 .

In addition, although the laminate of the above-described embodiment includes the adhesive layer 3 for bonding the support base 1 and the substrate 4 together, the present invention is not limited to this. 2 only. In this case, for example, a separation layer that also functions as an adhesive layer is used.

(Laminate manufacturing method)
A fourth aspect of the present invention is a method for manufacturing a laminate having a separation layer between a light-transmitting support base and a substrate, comprising a separation layer forming step and a lamination step.

<First Embodiment>
FIG. 2 is a schematic process diagram illustrating an embodiment of a method for manufacturing a laminate. FIG. 2(a) is a diagram for explaining the separation layer forming process, and FIG. 2(b) is a diagram for explaining the stacking process.
In the method for producing a laminate of the present embodiment, a separation layer is formed by dissolving a resin component ((P) component) having a repeating unit represented by the general formula (p1) in an organic solvent component ((S) component). compositions are used. Also, an adhesive layer-forming composition in which a hydrocarbon resin is dissolved in the (S) component is used.

[Separation layer forming step]
The separation layer forming step in the embodiment is a step of forming a separation layer by applying the separation layer forming composition of the embodiment described above to one side of the supporting substrate and then baking the composition.
In FIG. 2(a), the separation layer 2 is formed by coating the separation layer forming composition of the above-described embodiment on the support substrate 1 and then baking it (i.e., the support substrate with a separation layer). are produced).

The method of applying the separation layer-forming composition onto the supporting substrate 1 is not particularly limited, and examples thereof include spin coating, dipping, roller blade, spray coating, slit coating and the like.

In the separation layer forming step, a film is formed by removing the (S) component from the coating layer of the separation layer forming composition applied on the support substrate 1 under a heating environment or a reduced pressure environment. The (S) component can be removed by, for example, baking treatment at a temperature of 80 to 150° C. for 120 to 360 seconds.
After that, the film obtained by removing the (S) component from the coating layer is fired in an atmospheric environment to form the separation layer 2 made of the fired body.

The temperature at which the film obtained by removing the (S) component from the coating layer is baked is appropriately set according to the type of the (P) component, and is preferably 200° C. or higher, and preferably 250° C. or higher. is more preferable. If the firing temperature is equal to or higher than the lower limit of the preferred range, the separation layer capable of absorbing light having a wavelength of 600 nm or less can be formed more stably.
Although the upper limit of the temperature for firing is not particularly limited, it is preferably 800° C. or lower, more preferably 600° C. or lower.

The baking time is preferably 3 minutes or more and 3 hours or less, more preferably 3 minutes or more and 30 minutes or less. As a result, a separation layer capable of absorbing light with a wavelength of 600 nm or less can be reliably formed.

[Lamination process]
The lamination step in the embodiment is a step of laminating the support base on which the separation layer is formed and the substrate on which the separation layer is not formed via the separation layer and the adhesive layer.
In FIG. 2(b), a support substrate 1 having a separation layer 2 formed thereon and a substrate 4 having no separation layer 2 formed thereon are laminated via a separation layer 2 and an adhesive layer 3 to form a support substrate 1, A laminate 10 is obtained in which the separation layer 2, the adhesive layer 3, and the substrate 4 are stacked in this order.

As a specific method of the lamination step, a composition for forming an adhesive layer is applied onto the separation layer 2 and heated to form an adhesive layer 3, and then the support substrate 1 and the substrate 4 are bonded together. is mentioned.

The method of applying the adhesive layer-forming composition onto the separation layer 2 is not particularly limited, but may be performed in the same manner as the method of applying the separation layer-forming composition onto the supporting substrate 1 described above.
The baking treatment for forming the adhesive layer 3 is performed, for example, by stepwise heating while increasing the temperature, and the adhesive layer 3 is formed by removing the (S) component from the adhesive layer forming composition. .

The method of bonding the supporting base 1 and the substrate 4 is to arrange the substrate 4 at a predetermined position on the adhesive layer 3, and while heating (for example, about 100° C.) under vacuum, the supporting base 1 and the substrate 4 are bonded by a die bonder or the like. by crimping.

According to the method for manufacturing the laminate of the first embodiment, since the separation layer is provided by applying the composition for forming the separation layer of the above-described embodiment, the photoreactivity is enhanced and the supporting substrate is removed from the laminate. Laminates with good separability and preferably high chemical resistance can be produced.

Although the separation layer 2 is formed on the supporting substrate 1 in the above-described method for manufacturing the laminate of the present embodiment, the separation layer 2 may be formed on the substrate 4 without being limited to this.
Although the adhesive layer 3 is formed on the separation layer 2 in the above-described method for manufacturing the laminate of the present embodiment, the adhesive layer 3 may be formed on the substrate 4 without being limited to this.
In addition, the separation layer 2 may be formed on both the support substrate 1 and the substrate 4. In this case, the support substrate 1 and the substrate 4 are separated by the separation layer 2, the adhesive layer 3 and the separation layer 2. are glued together.

<Second embodiment>
FIG. 3 is a schematic process diagram illustrating another embodiment of the method for manufacturing a laminate. FIG. 3(a) is a diagram showing a laminate manufactured by the manufacturing method of the first embodiment, and FIG. 3(b) is a diagram for explaining the sealing process.
The method for producing a laminate according to another embodiment further includes a sealing step in addition to the separation layer forming step and the laminating step.

[Sealing process]
The sealing step in the embodiment is a step of sealing, with a sealing material, the substrate bonded to the supporting substrate via the adhesive layer after the laminating step to produce a sealed body.
In FIG. 3B, a sealing body 20 (laminated body) is obtained in which the entire substrate 4 placed on the adhesive layer 3 is sealed with a sealing material.

In the sealing step, for example, a sealing material heated to 130 to 170° C. is supplied onto the adhesive layer 3 so as to cover the substrate 4 while maintaining a high viscosity state, and is compression molded. , a sealing body 20 (laminated body) having a sealing material layer 5 provided on an adhesive layer 3 is produced.

A composition containing, for example, an epoxy resin or a silicone resin can be used as the sealing material. It is preferable that the sealing material layer 5 is not provided for each substrate 4 but is provided so as to cover the entire substrate 4 on the adhesive layer 3 .

According to the method for manufacturing a laminate of the second embodiment, a sealing substrate having a substrate (wiring layer) on the separation layer and the adhesive layer by applying the composition for forming the separation layer of the above-described embodiment is suitable. It is possible to form

<Third Embodiment>
FIG. 4 is a schematic process diagram explaining another embodiment of the method for manufacturing a laminate. FIG. 4(a) is a diagram showing a sealing body manufactured by the manufacturing method of the second embodiment, FIG. 4(b) is a diagram for explaining the grinding process, and FIG. It is a figure explaining a rewiring formation process.
A method for manufacturing a laminate according to another embodiment further includes a grinding step and a rewiring forming step in addition to the separation layer forming step, the stacking step and the sealing step.

[Grinding process]
The grinding step in the embodiment is a step of grinding the sealing material portion (sealing material layer 5) of the sealing body 20 after the sealing process so that a part of the substrate 4 is exposed.
Grinding of the encapsulant portion is performed by grinding the encapsulant layer 5 to a thickness substantially equal to that of the substrate 4, as shown in FIG. 4B, for example.

[Rewiring Forming Step]
The rewiring formation step in the embodiment is a step of forming a rewiring layer 6 on the exposed substrate 4 after the grinding step.
The redistribution layer, also called RDL (Redistribution Layer), is a thin-film wiring body constituting wiring connected to elements, and may have a single-layer or multi-layer structure. For example, the rewiring layer is composed of a dielectric (silicon oxide (SiO _x ), a photosensitive resin such as photosensitive epoxy, etc.), a conductor (aluminum, copper, titanium, nickel, gold, a metal such as silver, and silver-tin). The wiring may be made of an alloy such as an alloy), but is not limited to this.

As a method of forming the rewiring layer 6 , first, a dielectric layer such as silicon oxide (SiO _x ) or photosensitive resin is formed on the sealing material layer 5 . A dielectric layer made of silicon oxide can be formed by, for example, a sputtering method, a vacuum deposition method, or the like. The dielectric layer made of a photosensitive resin can be formed by applying a photosensitive resin onto the sealing material layer 5 by a method such as spin coating, dipping, roller blade, spray coating, or slit coating. .

Subsequently, wiring is formed on the dielectric layer using a conductor such as metal.
As a method for forming the wiring, for example, known semiconductor processing techniques such as lithography processing such as photolithography (resist lithography) and etching processing can be used. Such lithographic processing includes, for example, lithographic processing using positive resist materials and lithographic processing using negative resist materials.

Thus, when performing photolithography processing, etching processing, and the like, the separation layer 2 is formed using an acid such as hydrofluoric acid, an alkali such as tetramethylammonium hydroxide (TMAH), or a resist solvent for dissolving the resist material. exposed to In particular, in fan-out technology, PGMEA, cyclopentanone, cycloheptanone, N-methyl-2-pyrrolidone (NMP), cyclohexanone, or the like is used as a resist solvent.
However, by forming the separation layer using the separation layer-forming composition of the embodiment described above, the separation layer has high chemical resistance. Therefore, the separation layer is not easily dissolved or peeled off even when exposed to not only acids and alkalis but also resist solvents.
Thus, the rewiring layer 6 can be suitably formed on the sealing material layer 5 .

According to the method for manufacturing the laminate of the third embodiment, the support substrate 1, the separation layer 2, the adhesive layer 3, the sealing material layer 5 covering the substrate 4, and the rewiring layer 6 are laminated in this order. Thus, the laminated body 30 can be stably manufactured.
Such a laminate 30 is a laminate produced in a process based on fan-out technology in which the terminals provided on the substrate 4 are mounted on the rewiring layer 6 extending outside the chip area.

In the method of manufacturing the laminate of the present embodiment, bumps can be formed on the rewiring layer 6 or elements can be mounted. Elements can be mounted on the rewiring layer 6 by using, for example, a chip mounter.

(Method for manufacturing electronic component)
A method for manufacturing an electronic component according to a fifth aspect of the present invention includes a separation step and a removal step after obtaining a laminate by the method for manufacturing a laminate according to the fourth aspect.

FIG. 5 is a schematic process diagram illustrating an embodiment of a method for manufacturing a semiconductor package (electronic component). FIG. 5(a) is a diagram showing a laminate manufactured by the manufacturing method of the third embodiment, FIG. 5(b) is a diagram for explaining the separation step, and FIG. 5(c) is a diagram for removing It is a figure explaining a process.

[Separation process]
The separation step in the embodiment is a step of separating the support substrate 1 from the laminate 30 by irradiating the separation layer 2 with light (arrow) through the support substrate 1 to change the properties of the separation layer 2 .

As shown in FIG. 5A, in the separation step, the separation layer 2 is denatured by irradiating the separation layer 2 with light (arrow) through the supporting base 1 .
Wavelengths capable of altering the properties of the separation layer 2 include, for example, a range of 600 nm or less.
The type and wavelength of the light to be irradiated may be appropriately selected according to the transparency of the support substrate 1 and the material of the separation layer 2. Examples include YAG laser, ruby laser, glass laser, YVO ₄ laser, LD laser, and fiber. Solid-state lasers such as lasers, liquid lasers such as dye lasers, gas lasers such as _CO2 lasers, excimer lasers, Ar lasers and He--Ne lasers, laser beams such as semiconductor lasers and free electron lasers, and non-laser beams can be used. can. As a result, the separation layer 2 is changed in quality so that the support base 1 and the substrate 4 can be easily separated.

When irradiating a laser beam, the following conditions can be mentioned as an example of laser beam irradiation conditions.
The average output value of the laser light is preferably 1.0 W or more and 5.0 W or less, more preferably 3.0 W or more and 4.0 W or less. The repetition frequency of the laser light is preferably 20 kHz or more and 60 kHz or less, more preferably 30 kHz or more and 50 kHz or less. The scanning speed of the laser light is preferably 100 mm/s or more and 10000 mm/s or less.

After irradiating the separation layer 2 with light (arrow) to change the quality of the separation layer 2, the support substrate 1 is separated from the laminate 30 as shown in FIG. 5(b).
For example, the supporting base 1 and the substrate 4 are separated by applying a force in a direction in which the supporting base 1 and the substrate 4 are separated from each other. Specifically, one of the support base 1 and the substrate 4 (rewiring layer 6) is fixed to the stage, and the other is lifted while being sucked and held by a separation plate equipped with a suction pad such as a bellows pad. The support base 1 and the substrate 4 can be separated.
The force applied to the laminate 30 may be appropriately adjusted depending on the size of the laminate 30, etc., and is not limited. By applying a force of about 0.98 to 49 N), the support base 1 and the substrate 4 can be preferably separated.

[Removal step]
The removal step in the embodiment is a step of removing the adhesive layer 3 and separation layer 2 attached to the substrate 4 after the separation step.
In FIG. 5(b), the adhesive layer 3 and the separation layer 2 are attached to the substrate 4 after the separation step. In this embodiment, the electronic component 40 shown in FIG. 5C is obtained by removing the adhesive layer 3 and the separation layer 2 attached to the substrate 4 in the removing step.

Methods for removing the adhesive layer 3 and the like adhering to the substrate 4 include, for example, a method of removing residues of the adhesive layer 3 and the separation layer 2 using a cleaning liquid, or a method of plasma irradiation.
A cleaning liquid containing an organic solvent is preferably used as the cleaning liquid. As the organic solvent, it is preferable to use the organic solvent blended in the composition for forming the separation layer and the organic solvent blended in the composition for forming the adhesive layer.

<Other embodiments>
FIG. 6 is a schematic process diagram explaining another embodiment of the method for manufacturing a semiconductor package (electronic component). FIG. 6(a) is a schematic diagram showing another embodiment of a laminate to which the present invention is applied, FIG. 6(b) is a diagram for explaining a separation step, and FIG. 6(c) is a diagram for removing It is a figure explaining a process.

A laminate 50 of the embodiment shown in FIG. 6(a) is formed by laminating a support substrate 51, a separation layer 52, a wiring layer 57, a substrate 54, and a sealing material layer 55 in this order from the outermost surface 51s side.

The description of the support base 51 is the same as the description in <Support Base> above.
The description of the separation layer 52 is the same as the description in <separation layer> above.

The wiring layer 57 includes, for example, a dielectric (silicon oxide (SiO _x ), a photosensitive resin such as photosensitive epoxy, etc.), a conductor (aluminum, copper, titanium, nickel, gold, a metal such as silver, and silver-tin). (alloys such as alloys) may be mentioned.
The description of the substrate 54 is the same as the description in <Substrate> above.
For example, the sealing material layer 55 may be formed using a composition containing epoxy resin or silicone resin.

The laminate 50 can be manufactured, for example, as follows.
First, the separation layer 52 is formed on the surface of the support substrate 51 opposite to the outermost surface 51s. The separation layer 52 may be formed in the same manner as in the above [separation layer forming step].
Next, a wiring layer 57 is formed on the surface of the separation layer 52 opposite to the supporting substrate 51 . The wiring layer 57 may be formed in the same manner as in the above [rewiring forming step].
Next, the substrate 54 is attached to the surface of the wiring layer 57 opposite to the separation layer 52 via, for example, a bump.
Next, a sealing material layer 55 is formed by sealing with a sealing material so as to cover the substrate 54 bonded to the wiring layer 57 . The formation of the sealing material layer 55 may be performed in the same manner as the above [sealing process]. Thereby, the laminated body 50 is manufactured.

As shown in FIG. 6A, in the separation step in the embodiment, the separation layer 52 is irradiated with light (arrows) through the supporting substrate 51 to alter the properties of the separation layer 52 .
After irradiating the separation layer 52 with light (arrow) to alter the quality of the separation layer 52, the supporting substrate 51 is separated from the laminate 50 as shown in FIG. 6(b). The operation in this separation step may be performed in the same manner as the operation in [Separation step].

As shown in FIG. 6C, in the removal step in the embodiment, the electronic component 60 is obtained by removing the separation layer 52 adhering to the wiring layer 57 after the separation step.
Examples of a method for removing the separation layer 52 adhering to the wiring layer 57 include a method of irradiating plasma and a method of removing residues of the separation layer 52 using a cleaning liquid. Oxygen plasma is preferably used as the plasma.

In the method for manufacturing an electronic component according to the present embodiment, after the above removal step, the electronic component may be further subjected to processing such as solder ball formation, dicing, or oxide film formation.

EXAMPLES The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.

<Resin component (P)>
In this example, resins (P-1) to (P-5) shown below were used.
Resin (P-1): resin having a repeating unit represented by the following chemical formula (p1-1), weight average molecular weight 5380, molecular weight dispersity 1.62
Resin (P-2): resin having a repeating unit represented by the following chemical formula (p1-2), weight average molecular weight 5500, molecular weight dispersity 1.60
Resin (P-3): resin having a repeating unit represented by the following chemical formula (p1-3), weight average molecular weight: 5220, molecular weight dispersity: 1.72
Resin (P-4): resin having a repeating unit represented by the following chemical formula (p1-4), weight average molecular weight: 11,600, molecular weight dispersity: 2.17
Resin (P-5): naphthol novolac type phenolic resin, weight average molecular weight 5000, molecular weight dispersity 3.90

<Preparation of composition for forming separation layer>
(Examples 1-5, Comparative Examples 1-2)
Each component shown in Table 1 was mixed and dissolved to prepare a separation layer forming composition (resin component concentration: 35% by mass) of each example.

In Table 1, each abbreviation has the following meaning. The numbers in [ ] are the compounding amounts (parts by mass).
(P)-1: Resin (P-1)
(P)-2: Resin (P-2)
(P)-3: Resin (P-3)
(P)-4: Resin (P-4)
(P)-5: Resin (P-5)
(T)-1: CXC2689
(S)-1: propylene glycol monomethyl ether (PGME)

<Formation of separation layer>
Each separation layer forming composition was spin-coated on a bare glass support substrate (12 inches, thickness 0.7 mm), heated at a temperature of 100°C for 300 seconds, and then heated at a temperature of 150°C. The solvent was removed by heating for 300 seconds to form a film with a thickness of 1.8 μm.
Then, the formed film was baked at a temperature of 300° C. for 20 minutes in an atmospheric environment to form a separation layer on the bare glass support substrate, thereby obtaining a support substrate with a separation layer. Table 2 shows the thickness of the separation layer formed at that time.

[Evaluation of light transmittance in separation layer]
In <Formation of Separation Layer> described above, a film in a state before baking and a film in a state after baking (separation layer) formed using the composition for forming a separation layer of each example were measured by a spectroscopic analysis measuring instrument UV -3600 (manufactured by Shimadzu Corporation) was used to evaluate the transmittance (%) of light with a wavelength of 532 nm in each film formed on the bare glass support substrate by irradiating light with a wavelength of 380 to 780 nm. This evaluation result is shown in Table 2.

[Evaluation of laser reactivity in separation layer]
The separation layer formed using the separation layer forming composition of each example is irradiated with a laser beam having a wavelength of 532 nm under the conditions of a scanning speed of 3000 mm/sec, a frequency of 40 kHz, an output (current value) of 24 A, and an irradiation pitch of 140 μm. By doing so, the laser reactivity was evaluated.
For evaluation of such laser reactivity, a microscope VHX-600 (manufactured by Keyence) was used to observe the state of traces of laser light irradiated to the separation layer, and the size of the traces of laser light on the surface of the separation layer (laser It was carried out by determining the dent diameter/μm). This evaluation result is shown in Table 2.

From the results shown in Table 2, the separation layers formed using the separation layer forming compositions of Examples 1 to 5 were all formed using the separation layer forming compositions of Comparative Examples 1 and 2. It can be seen that the light transmittance is lower and the diameter of the laser dent is larger than that of the separation layer.
That is, it was confirmed that the composition for forming a separation layer to which the present invention is applied can form a separation layer with enhanced photoreactivity and good separability of the supporting substrate from the laminate.

<Production of laminate>
By the same method as <Formation of Separation Layer> described above, the composition for forming a separation layer of each example was spin-coated on a bare glass support substrate (12 inches, thickness 0.7 mm), and the temperature was 100°C. The film was formed by heating for 300 seconds and then removing the solvent by heating at a temperature of 150° C. for 300 seconds. Next, the formed film was baked under the conditions of 300° C. for 20 minutes in an atmospheric environment to form a separation layer having a thickness of 0.5 μm on the bare glass supporting substrate (separation layer forming step).
On the other hand, an adhesive composition TZNR (registered trademark)-A4012 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was spin-coated on a semiconductor wafer substrate (12 inch, silicon), and 4 each at temperatures of 90 ° C., 160 ° C., and 220 ° C. After baking for a minute, an adhesive layer having a film thickness of 50 μm was formed.
Next, the bare glass supporting substrate having the separation layer formed thereon and the semiconductor wafer substrate having the adhesive layer formed thereon are superimposed in this order of the semiconductor wafer substrate, the adhesive layer, the separating layer and the bare glass supporting substrate. Under the conditions of 5 Pa and 215° C., it was pressed for 2 minutes with an application pressure of 4000 kgf (about 39.2 kN). As a result, the bare glass supporting substrate and the semiconductor wafer substrate were laminated via the separation layer and the adhesive layer to obtain a laminated body (lamination step).

After obtaining the laminate, a laser beam with a wavelength of 532 nm is applied to the separation layer from the supporting substrate side of the laminate under the conditions of a scanning speed of 3000 mm/sec, a frequency of 40 kHz, an output (current value) of 24 A, and an irradiation pitch of 140 μm. irradiated (separation step). Thereafter, the adhesive layer was removed by washing with p-menthane (removal step).
It was confirmed that the support substrate was separated from the semiconductor wafer substrate included in the laminate by the above operation.

<Electronic component production example (1)>
By the same method as <Formation of Separation Layer> described above, the composition for forming a separation layer of each example was spin-coated on a bare glass support substrate (12 inches, thickness 0.7 mm), and the temperature was 100°C. The film was formed by heating for 300 seconds and then removing the solvent by heating at a temperature of 150° C. for 300 seconds. Next, the formed film is baked under the conditions of 300° C. for 20 minutes in an atmospheric environment to form a separation layer having a thickness of 0.5 μm on the bare glass support substrate, thereby obtaining a support substrate with a separation layer. obtained (separation layer forming step).
After that, an adhesive composition TZNR (registered trademark)-A4012 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was spin-coated on this separation layer, and baked at temperatures of 90 ° C., 160 ° C., and 220 ° C. for 4 minutes each, An adhesive layer having a film thickness of 50 μm was formed.
Then, using a die bonder (manufactured by TRESKY), the plate of the die bonder was heated to 150° C., and a 2 mm square silicon bare chip was crimped onto the adhesive layer at a pressure of 35 N for 1 second. After disposing the silicon bare chip, it was heated at 200° C. for 1 hour in a nitrogen atmosphere to obtain a laminate (laminating step).

The obtained laminate was placed on a plate heated to 50° C., 12 g of a sealant containing an epoxy resin was put on the bare chip so as to cover the bare chip, and under a reduced pressure condition of less than 10 Pa, using a lamination device, A pressing plate heated to 130° C. applied a pressure of 1 ton for 5 minutes. In this manner, the bare chip arranged on the adhesive layer was sealed with the sealing material to produce a sealed body (sealing step).

After producing the sealing body, from the supporting substrate side of the sealing body, a laser beam with a wavelength of 532 nm was applied to the separation layer under the conditions of a scanning speed of 3000 mm / second, a frequency of 40 kHz, an output (current value) of 24 A, and an irradiation pitch of 140 μm. Light was applied (separation step). Thereafter, the adhesive layer was removed by washing with p-menthane (removal step).
It was confirmed that the supporting substrate was separated from the sealing body by the above operation. An electronic component was obtained as described above.

<Electronic component production example (2)>
By the same method as <Formation of Separation Layer> described above, the composition for forming a separation layer of each example was spin-coated on a bare glass support substrate (12 inches, thickness 0.7 mm), and the temperature was 90° C. for 180 degrees. The solvent was removed by heating under conditions of 1 second to form a membrane. Next, the formed film is baked under the conditions of 300° C. for 10 minutes in an atmospheric environment to form a separation layer having a thickness of 0.35 μm on the bare glass support substrate, thereby obtaining a support substrate with a separation layer. obtained (separation layer forming step).
Next, a wiring layer forming material (trade name: TMMR S2000) is applied onto the separation layer and baked at 90° C. for 3 minutes in an atmospheric environment to form a wiring layer having a thickness of 10 μm on the separation layer. was formed to obtain a laminate.

After the wiring layer is formed, the separation layer is irradiated with a laser beam having a wavelength of 532 nm from the bare glass support substrate side of the laminate under the conditions of an irradiation amount of 200 mJ/cm ² , an output (current value) of 22 A, and an irradiation pitch of 80 μm. did. Then, after being immersed in propylene glycol monomethyl ether acetate (PGMEA) as a cleaning liquid, it was baked at 90° C. for 5 minutes. Subsequently, the supporting substrate was separated from the layered body by repeating sintering under the conditions of 200° C. for 60 minutes in a nitrogen atmosphere three times (separation step). Thereafter, the surface of the wiring layer on the separation layer side was irradiated with oxygen plasma (power: 2000 W, oxygen flow rate: 2000 sccm, pressure: 75 Pa, temperature: 50°C, irradiation time: 5 minutes) to remove the separation layer adhering to the wiring layer. (removal step).
It was confirmed that the supporting substrate was separated from the laminate by the above operation. An electronic component was obtained as described above.

REFERENCE SIGNS LIST 1 support base 2 separation layer 3 adhesive layer 4 substrate 5 sealing material layer 6 rewiring layer 10 laminate 20 sealing body 30 laminate 40 electronic component 50 laminate 51 support base , 52 separation layer, 54 substrate, 55 encapsulant layer, 57 wiring layer, 60 electronic component

Claims (9)

In a laminate provided with a separation layer made of a sintered body capable of absorbing light in a wavelength range of 600 nm or less between a supporting substrate that transmits light and a substrate, irradiation of light from the supporting substrate side A composition for forming a separation layer for forming the separation layer that changes in properties so that the supporting substrate can be separated from the laminate,
A separation layer-forming composition containing a resin component (P) having a repeating unit represented by the following general formula (p1).

[In the formula, ^LP1 represents a divalent linking group containing an aromatic ring. R ^P1 represents an organic group. ] In a laminate comprising a supporting substrate that transmits light and an adhesive layer, the separating layer and the adhesive layer made of a sintered body capable of absorbing light in the wavelength range of 600 nm or less , between the supporting substrate and the substrate, wherein the light from the supporting substrate side A composition for forming a separation layer for forming the separation layer that is altered by the irradiation of to make it possible to separate the support substrate from the laminate,
2. The composition for forming a separation layer according to claim 1, which contains a resin component (P) having a repeating unit represented by the following general formula (p1).

[In the formula, ^LP1 represents a divalent linking group containing an aromatic ring. R ^P1 represents an organic group. ] 3. The composition for forming a separation layer according to claim 1, further comprising a thermal acid generator. a supporting substrate that transmits light ;
a separation layer formed on the supporting substrate using the separation layer forming composition according to any one of claims 1 to 3;
with
A supporting substrate with a separation layer , wherein the separation layer is a layer made of a sintered body capable of absorbing light in a wavelength range of 600 nm or less . A laminate comprising a separation layer made of a sintered body capable of absorbing light in the wavelength range of 600 nm or less , between the substrate and a supporting substrate that transmits light,
A laminate, wherein the separation layer is a layer made of a fired body of the composition for forming a separation layer according to any one of claims 1 to 3. A method for producing a laminate comprising a separation layer made of a fired body capable of absorbing light in a wavelength range of 600 nm or less , between a supporting substrate that transmits light and a substrate, the method comprising:
A separation layer formed by applying the separation layer-forming composition according to any one of claims 1 to 3 to at least one of the substrate and the supporting base, and then baking the separation layer. a forming step;
a lamination step of laminating the substrate and the supporting base via the separation layer;
A method for manufacturing a laminate. 7. The method according to claim 6, further comprising, after the lamination step, a sealing step of sealing the substrate bonded to the supporting base via the separation layer with a sealing material to produce a sealed body. A method for manufacturing a laminate. After the sealing step, a grinding step of grinding a sealing material portion of the sealing body so that a part of the substrate is exposed;
After the grinding step, a rewiring forming step of forming a rewiring on the exposed substrate;
The method for manufacturing a laminate according to claim 7, further comprising: After obtaining a laminate by the method for producing a laminate according to any one of claims 6 to 8, by irradiating the separation layer with light through the support substrate to alter the separation layer. , a separation step of separating the support substrate from the laminate;
a removal step of removing the separation layer adhering to the substrate after the separation step;
A method of manufacturing an electronic component.

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