JP2023172297A - Separation layer forming composition, support base with separation layer, laminate and method for producing the same, and method for producing electronic component - Google Patents

Abstract

To provide a separation layer forming composition that can form a separation layer that can be separated by short-wavelength light in a laminate, which has the separation layer between a support base and a substrate.SOLUTION: A separation layer forming composition is designed to form a separation layer in a laminate, which has the separation layer between a light-transmitting support base and a temporal fixing object, wherein the separation layer undergoes alteration upon light exposure from the support base side, allowing for the separation of the support base from the laminate. The separation layer forming composition contains a compound (P1) represented by the general formula (p1). Lb1 denotes a C1 to 10 aliphatic hydrocarbon group; Rb1 and Rb2 independently represent a C12 to 24 hydrocarbon group; and Rb3-Rb6 independently represent a hydrogen atom or a substituent.SELECTED DRAWING: None

Description

The present invention relates to a composition for forming a separation layer, a support substrate with a separation layer, a laminate, a method for manufacturing the same, and a method for manufacturing an electronic component.

Semiconductor packages (electronic components) including semiconductor elements have various forms depending on the corresponding size, such as WLP (Wafer Level Package) and PLP (Panel Level Package).
Semiconductor package technologies include fan-in technology and fan-out technology. As semiconductor packages based on fan-in technology, fan-in WLP (Fan-in Wafer Level Package), etc., in which terminals at the ends of bare chips are relocated within the chip area, are known. As semiconductor packages based on fan-out technology, fan-out WLP (Fan-out Wafer Level Package), etc., in which the terminals are relocated outside the chip area, are known.

In wafer level packaging, there are two methods for manufacturing fan-out type semiconductor packages: a method called mold first and a method called RDL first. In mold first, a rewiring layer is formed after a sealing layer for sealing a semiconductor chip is formed on a support substrate. In RDL first, after a rewiring layer is formed on a support base, a semiconductor chip is mounted on the rewiring layer, and a sealing layer is formed (for example, Patent Document 1). After manufacturing the semiconductor package, the supporting substrate is peeled off from the encapsulation layer or the redistribution layer.
RDL first has advantages such as ease of forming fine rewiring layers and the ability to mount expensive semiconductor chips only on normally formed rewiring layers.

In order to peel off the supporting substrate after manufacturing a semiconductor package, a method of forming a separation layer on the supporting substrate is adopted. For example, in Patent Document 2, after bonding a light-transmitting support base and a substrate via a light-to-heat conversion layer (separation layer) and an adhesive layer provided on the support base side, and processing the substrate, Disclosed is a method for manufacturing a laminate by separating a processed substrate from a supporting substrate by irradiating the separating layer with radiant energy (light) from the supporting substrate side to alter and decompose the separating layer. ing.

JP2022-025328A JP2004-64040A

Conventionally, a laser beam with a wavelength of 532 nm is often used to peel off a supporting base. However, long-wavelength laser light tends to cause thermal decomposition reactions due to photothermal reactions, and it has been pointed out that there is a risk of thermal damage to electronic components after processing. In RDL first, since there is no adhesive layer between the separation layer and the electronic component, the electronic component is more susceptible to damage by the laser beam used when separating the supporting substrate. In order to avoid the risk of damage to electronic components due to laser light, it is desirable to use laser light with a shorter wavelength.
The present invention has been made in view of the above circumstances, and provides a separation layer that can form a separation layer that can be separated by short wavelength light in a laminate that includes a separation layer between a supporting base and an object to be temporarily fixed. An object of the present invention is to provide a layer-forming composition, a supporting substrate with a separation layer using the same, a laminate, a method for manufacturing the same, and a method for manufacturing electronic components.

［式中、Ｌｂ^１は炭素原子数１～１０の脂肪族炭化水素基を表し；Ｒｂ^１及びＲｂ^２は、それぞれ独立に、炭素原子数１２～２４の炭化水素基を表し；Ｒｂ^３～Ｒｂ^６は、それぞれ独立に、水素原子又は置換基を表す。］
である。 In order to solve the above problems, the present invention employs the following configuration.
That is, the first aspect of the present invention is a laminate including a separation layer between a light-transmitting support base and an object to be temporarily fixed. , a composition for forming a separation layer for forming the separation layer that allows the support substrate to be separated from the laminate, the composition containing a compound (P1) represented by the following general formula (p1); Composition for layer formation.

[In the formula, Lb ¹ represents an aliphatic hydrocarbon group having 1 to 10 carbon atoms; Rb ¹ and Rb ² each independently represent a hydrocarbon group having 12 to 24 carbon atoms; Rb ³ to Rb ⁶ each independently represents a hydrogen atom or a substituent. ]
It is.

A second aspect of the present invention includes a support base that transmits light and a separation layer formed on the support base, and the separation layer is made of the composition for forming a separation layer according to the first aspect. This is a support substrate with a separation layer that is a cured product.

A third aspect of the present invention includes a support base that transmits light, a separation layer formed on the support base, and a temporarily fixed object temporarily fixed on the separation layer, and the separation layer is a laminate which is a cured product of the composition for forming a separation layer according to the first aspect.

A fourth aspect of the present invention is to apply the separation layer forming composition of the first aspect to one surface of a light-transmitting support base, and to cure the separation layer forming composition. a step of forming a separation layer, a step of temporarily fixing an object to be temporarily fixed on the separation layer, a step of treating the object to be temporarily fixed, and a step of irradiating the separation layer with light through the support base. , a method for processing a temporary fixing object, including the step of separating the support base from the temporarily fixed object after the treatment by altering the separation layer.

A fifth aspect of the present invention is to apply the separation layer forming composition of the first aspect to one surface of a light-transmitting support base, and to cure the separation layer forming composition. A method for manufacturing a laminate including the steps of forming a separation layer and forming a wiring layer on the separation layer.

A sixth aspect of the present invention includes a step of manufacturing a laminate by the method of manufacturing a laminate of the fifth aspect, and irradiating the separation layer with light through the support base to separate the separation layer. A method for manufacturing an electronic component, including a step of separating the support base from the laminate by changing the quality of the support base.

According to the present invention, a composition for forming a separation layer that can form a separation layer that can be separated by short wavelength light in a laminate having a separation layer between a support base and an object to be temporarily fixed, and a composition for forming a separation layer using the same. A support base with a separation layer, a laminate, a method for manufacturing the same, and a method for manufacturing an electronic component can be provided.

FIG. 1 is a schematic diagram showing a support base with a separation layer according to one embodiment. FIG. 1 is a schematic diagram showing a laminate of one embodiment. FIG. 1 is a schematic diagram showing a laminate of one embodiment. FIG. 1 is a schematic diagram showing a laminate of one embodiment. FIG. 2 is a schematic diagram illustrating a separation step in a method for manufacturing an electronic component according to an embodiment. FIG. 1 is a schematic diagram showing an electronic component (semiconductor package) obtained by a method for manufacturing an electronic component according to an embodiment.

In this specification and the claims, the term "aliphatic" is a relative concept to aromatic, and is defined to mean groups, compounds, etc. that do not have aromaticity.
Unless otherwise specified, "alkyl group" includes linear, branched, and cyclic monovalent saturated hydrocarbon groups. The same applies to the alkyl group in the alkoxy group.
Unless otherwise specified, the "alkylene group" includes linear, branched, and cyclic divalent saturated hydrocarbon groups.
A "halogenated alkyl group" is a group in which some or all of the hydrogen atoms of an alkyl group are substituted with a halogen atom, and examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
"Fluorinated alkyl group" refers to a group in which some or all of the hydrogen atoms of an alkyl group are substituted with fluorine atoms.
"Repeating unit" means a monomer unit (monomer unit) that constitutes a high molecular compound (resin, polymer, copolymer).
When describing "may have a substituent", there are cases where a hydrogen atom (-H) is substituted with a monovalent group, and cases where a methylene group (-CH ₂ -) is substituted with a divalent group. including both.

"Styrene" is a concept that includes styrene and styrene in which the hydrogen atom at the α-position is substituted with other substituents such as an alkyl group or a halogenated alkyl group. Note that the α-position (α-position carbon atom) refers to a carbon atom to which a benzene ring is bonded, unless otherwise specified.

The alkyl group as the substituent at the α-position is preferably a linear or branched alkyl group, specifically an alkyl group having 1 to 5 carbon atoms (methyl group, ethyl group, propyl group, isopropyl group). group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group), and the like.
In addition, examples of the halogenated alkyl group as a substituent at the α-position include a group in which part or all of the hydrogen atoms of the above-mentioned "alkyl group as a substituent at the α-position" are substituted with a halogen atom. It will be done. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, and the like, with a fluorine atom being particularly preferred.

In this specification and the claims, some structures represented by chemical formulas may contain asymmetric carbon atoms and may have enantiomers or diastereomers. In that case, one chemical formula represents these isomers. These isomers may be used alone or as a mixture.

(Composition for forming separation layer)
The composition for forming a separation layer according to the first aspect of the present invention is a laminate including a separation layer between a light-transmitting support substrate and an object to be temporarily fixed, in which light from the support substrate side is provided. The purpose is to form the separation layer which is altered by irradiation to enable the support substrate to be separated from the laminate. The composition for forming a separation layer of this embodiment contains a compound (P1) represented by the following general formula (p1).

FIG. 2 shows an embodiment of a laminate to which the present invention is applied.
The laminate 20 shown in FIG. 2 includes a separation layer 2 between the support base 1 and the wiring layer 3 which is the object to be temporarily fixed. (wiring layer 3) are laminated in this order.
The support base 1 is made of a material that transmits light. In the laminate 20, when the separation layer 2 is irradiated with light from the support base 1 side, the separation layer 2 is altered and decomposed, so that the support base 1 is separated from the laminate 20.
The separation layer 2 in this laminate 20 can be formed using the composition for forming a separation layer of this embodiment.

<Resin component (P)>
The composition for forming a separation layer of this embodiment contains a resin component (P) (hereinafter also referred to as "component (P)").

≪(P1) component≫
The separation layer forming composition of the present embodiment includes a compound (P1) represented by the following general formula (p1) (hereinafter also referred to as "(P1) component") as the (P) component.

［式中、Ｌｂ^１は炭素原子数１～１０の脂肪族炭化水素基を表し；Ｒｂ^１及びＲｂ^２は、それぞれ独立に、炭素原子数１２～２４の炭化水素基を表し；Ｒｂ^３～Ｒｂ^６は、それぞれ独立に、水素原子又は置換基を表す。］

[In the formula, Lb ¹ represents an aliphatic hydrocarbon group having 1 to 10 carbon atoms; Rb ¹ and Rb ² each independently represent a hydrocarbon group having 12 to 24 carbon atoms; Rb ³ to Rb ⁶ each independently represents a hydrogen atom or a substituent. ]

In the general formula (p1), Lb ¹ represents an aliphatic hydrocarbon group having 1 to 10 carbon atoms. The aliphatic hydrocarbon group in Lb ¹ may be linear, branched, or have a cyclic structure. The aliphatic hydrocarbon group in Lb ¹ may be a saturated aliphatic hydrocarbon group or an unsaturated aliphatic hydrocarbon group, but a saturated aliphatic hydrocarbon group is preferable.

The linear aliphatic hydrocarbon group preferably has 1 to 8 carbon atoms, more preferably 1 to 6 carbon atoms, even more preferably 1 to 4 carbon atoms, and has 1, 2, or 3 carbon atoms. Particularly preferred. The linear aliphatic hydrocarbon group is preferably a linear alkylene group.
The branched aliphatic hydrocarbon group preferably has 2 to 8 carbon atoms, more preferably 2 to 6 carbon atoms, even more preferably 2 to 4 carbon atoms, and particularly preferably 2 or 3 carbon atoms. The branched aliphatic hydrocarbon group is preferably a branched alkylene group.

Examples of the aliphatic hydrocarbon group containing a ring in the structure include an alicyclic hydrocarbon group (a group obtained by removing two hydrogen atoms from an aliphatic hydrocarbon ring), and an alicyclic hydrocarbon group in which the alicyclic hydrocarbon group is linear or branched. Examples thereof include a group bonded to the end of a chain aliphatic hydrocarbon group, and a group in which an alicyclic hydrocarbon group is interposed in the middle of a linear or branched aliphatic hydrocarbon group. The linear or branched aliphatic hydrocarbon group in the aliphatic hydrocarbon group containing a ring in its structure includes the above-mentioned linear aliphatic hydrocarbon group or branched aliphatic hydrocarbon group. Similar things can be mentioned.
The alicyclic hydrocarbon group preferably has 3 to 10 carbon atoms, more preferably 3 to 8 carbon atoms, and even more preferably 3 to 6 carbon atoms.
The alicyclic hydrocarbon group may be polycyclic or monocyclic. As the monocyclic alicyclic hydrocarbon group, a group obtained by removing two hydrogen atoms from a monocycloalkane is preferable. The monocycloalkane preferably has 3 to 6 carbon atoms, and specific examples include cyclopentane and cyclohexane. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a polycycloalkane, and the polycycloalkane preferably has 7 to 10 carbon atoms, and specifically, adamantane, Examples include norbornane, isobornane, tricyclodecane, and the like.

Lb ¹ is preferably a linear or branched alkylene group, preferably having 1 to 8 carbon atoms, more preferably having 1 to 6 carbon atoms, even more preferably having 1 to 4 carbon atoms, and having a carbon number of 1 to 6 carbon atoms. 1, 2 or 3 are particularly preferred.

In the general formula (p1), Rb ¹ and Rb ² each independently represent a hydrocarbon group having 12 to 24 carbon atoms. The hydrocarbon group in Rb ¹ and Rb ² may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group.

The aliphatic hydrocarbon group in Rb ¹ and Rb ² may be linear, branched, or have a cyclic structure. The aliphatic hydrocarbon group in Rb ¹ and Rb ² may be a saturated aliphatic hydrocarbon group or an unsaturated aliphatic hydrocarbon group. The aliphatic hydrocarbon group in Rb ¹ and Rb ² preferably has 12 to 20 carbon atoms, more preferably 12 to 18 carbon atoms, and even more preferably 14 to 16 carbon atoms.

Examples of the aliphatic hydrocarbon group containing a ring in the structure of Rb ¹ and Rb ² include an alicyclic hydrocarbon group (a group obtained by removing one hydrogen atom from an aliphatic hydrocarbon ring), and an alicyclic hydrocarbon group. Examples include a group bonded to the end of a linear or branched aliphatic hydrocarbon group, and a group in which an alicyclic hydrocarbon group is interposed in the middle of a linear or branched aliphatic hydrocarbon group. .

The aromatic hydrocarbon group in Rb ¹ and Rb ² may be monocyclic or polycyclic. The aromatic ring contained in the aromatic hydrocarbon group preferably has 5 to 20 carbon atoms, more preferably 6 to 15 carbon atoms, and even more preferably 6 to 12 carbon atoms. Examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene. Specific examples of aromatic hydrocarbon groups include groups obtained by removing one hydrogen atom from the aromatic hydrocarbon ring (aryl group or heteroaryl group); aromatic compounds containing two or more aromatic rings (for example, biphenyl, a group in which one hydrogen atom of the aromatic hydrocarbon ring is substituted with an alkylene group (e.g., benzyl group, phenethyl group, 1-naphthylmethyl group, 2-naphthyl group); methyl group, 1-naphthylethyl group, arylalkyl group such as 2-naphthylethyl group, etc.). The alkylene group bonded to the aromatic hydrocarbon ring preferably has 1 to 12 carbon atoms, more preferably 1 to 10 carbon atoms.

Rb ¹ and Rb ² are preferably linear or branched saturated or unsaturated aliphatic hydrocarbon groups, and more preferably linear saturated or unsaturated aliphatic hydrocarbon groups. When Rb ¹ and Rb ² are unsaturated aliphatic hydrocarbon groups, the number of unsaturated bonds is not particularly limited, but for example, 1 to 5, 1 to 4, 1 to 3, or 1 or There are two examples. Among these, Rb ¹ and Rb ² are preferably a linear alkyl group, a linear alkenyl group, a linear alkadiene group, or a linear alkatriene group.

Specific examples of Rb ¹ and Rb ² are shown below, but the invention is not limited thereto.

In the formula (p1), Rb ³ to Rb ⁶ each independently represent a hydrogen atom or a substituent. The substituents in Rb ³ to Rb ⁶ are not particularly limited. Substituents for Rb ³ to Rb ⁶ include, for example, a hydroxy group, a carboxy group, a halogen atom (fluorine atom, chlorine atom, bromine atom, etc.), an alkoxy group, an alkyloxycarbonyl group, a nitro group, and an amino group; Examples include an alkyl group which may have a group as a substituent.
The alkyl group in Rb ³ to Rb ⁶ preferably has 1 to 6 carbon atoms, more preferably 1 to 4 carbon atoms, even more preferably 1 to 3 carbon atoms, and particularly preferably 1 or 2 carbon atoms. The alkyl group may or may not have a substituent, but preferably does not have a substituent.
The alkoxy group in Rb ³ to Rb ⁶ preferably has 1 to 6 carbon atoms, more preferably 1 to 4 carbon atoms, even more preferably 1 to 3 carbon atoms, and particularly preferably 1 or 2 carbon atoms.
The alkyl group or alkoxy group in Rb ³ to Rb ⁶ may be linear or branched, but preferably linear.

Rb ³ to Rb ⁶ are preferably a hydrogen atom or an alkyl group, more preferably a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and particularly preferably a hydrogen atom, a methyl group, or an ethyl group.

Specific examples of the component (P1) are shown below, but the invention is not limited thereto.

［式中、Ｒは、前記式（Ｒｂ１－１）～（Ｒｂ１－４）のいずれかで表される基を表す。複数のＲは、相互に同じでもよく、異なってもよい。］

[In the formula, R represents a group represented by any of the above formulas (Rb1-1) to (Rb1-4). A plurality of R's may be the same or different. ]

The component (P1) may be used alone or in combination of two or more. The component (P1) may be a mixture of compounds in which R in the formula (p1-1) is different from each other.
The proportion of component (P1) in component (P) is preferably 50 to 100% by mass, preferably 60 to 100% by mass, and 70 to 100% by mass based on the total mass (100% by mass) of component (P). More preferably, 80 to 100% by mass or 90 to 100% by mass is particularly preferred.
When the content of the component (P1) is within the above-mentioned preferred range, the photoreactivity of the separation layer with respect to short wavelength light (for example, 400 nm or less) can be more easily enhanced.

≪(P2) component≫
In addition to the above-mentioned (P1) component, the (P) component may also contain a resin component other than the above-mentioned (P1) component (hereinafter also referred to as "(P2) component"). (P2) Components include phenol derivative resins, novolac type phenol resins, resol type phenol resins, hydroxystyrene resins, hydroxyphenylsilsesquioxane resins, hydroxybenzylsilsesquioxane resins, phenol skeleton-containing acrylic resins, etc. .

(P2) component may be used alone or in combination of two or more.
The ratio of component (P2) in component (P) is preferably 0 to 50% by mass, preferably 0 to 40% by mass, and preferably 0 to 30% by mass with respect to the total mass (100% by mass) of component (P). More preferably, 0 to 20% by weight or particularly preferably 0 to 10% by weight.
When the content of the component (P2) is within the above-mentioned preferred range, the photoreactivity of the separation layer with respect to short wavelength light (for example, 400 nm or less) can be more easily enhanced.

The composition for forming a separation layer of this embodiment may contain one or more types of component (P).
The content of the component (P) in the composition for forming a separation layer of this embodiment may be adjusted depending on the thickness of the separation layer to be formed. The content of component (P) in the composition for forming a separation layer is, for example, 1 to 100% by mass based on the total mass (100% by mass) of the composition. The content of component (P) is preferably 1 to 70% by weight, more preferably 5 to 50% by weight, even more preferably 10 to 50% by weight, and particularly preferably 10 to 30% by weight.
When the content of the component (P) is at least the lower limit of the above-mentioned preferred range, the photoreactivity of the separation layer can be more easily enhanced. In addition, adhesion can also be easily improved. On the other hand, if it is below the upper limit of the above-mentioned preferable range, it becomes easier to maintain a balance with other components.

<Other ingredients>
The composition for forming a separation layer of this embodiment may contain other components (optional components) in addition to the above-mentioned component (P).
Such optional components include a thermal acid generator component, a photoacid generator component, a photosensitizer component, an organic solvent component, a surfactant, a sensitizer, and the like.

≪Thermal acid generator≫
The composition for forming a separation layer of this embodiment may contain a thermal acid generator (hereinafter also referred to as "component (T)").

The component (T) can be appropriately selected from known components. Component (T) preferably has a temperature for generating acid equal to or higher than the temperature at which the supporting substrate coated with the composition for forming a separation layer is prebaked, more preferably 110°C or higher, and 130°C or higher. It is more preferable that the temperature is at least ℃.
Examples of the component (T) include trifluoromethanesulfonate, hexafluorophosphate, perfluorobutanesulfonate, boron trifluoride salt, and boron trifluoride ether complex. Preferred components (T) include compounds consisting of a cation moiety and an anion moiety shown below.

［式（Ｔ－ｃａ－１）中、Ｒ^ｈ０１～Ｒ^ｈ０４は、それぞれ独立して、水素原子、炭素原子数１～２０のアルキル基及びアリール基からなる群より選択される基であり、Ｒ^ｈ０１～Ｒ^ｈ０４のうちの少なくとも１つは、アリール基である。前記のアルキル基又はアリール基は、置換基を有していてもよい。式（Ｔ－ｃａ－２）中、Ｒ^ｈ０５～Ｒ^ｈ０７は、それぞれ独立して、炭素原子数１～２０のアルキル基及びアリール基からなる群より選択される基であり、Ｒ^ｈ０５～Ｒ^ｈ０７のうちの少なくとも１つは、アリール基である。前記のアルキル基又はアリール基は、置換基を有していてもよい。］

[In formula (T-ca-1), R ^h01 to R ^h04 are each independently a group selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, and an aryl group, and R At least one of ^h01 to R ^h04 is an aryl group. The alkyl group or aryl group described above may have a substituent. In formula (T-ca-2), R ^h05 to R ^h07 are each independently a group selected from the group consisting of an alkyl group and an aryl group having 1 to 20 carbon atoms, and R ^h05 to R ^h07 At least one of them is an aryl group. The alkyl group or aryl group described above may have a substituent. ]

- Regarding the cation moiety of component (T) In the formula (T-ca-1), the alkyl group in R ^h01 to R ^h04 has 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, and The number of atoms is more preferably 1 to 5, and a linear or branched alkyl group having 1 to 5 carbon atoms is even more preferred. Specific examples include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group, etc. Among these, methyl group, Ethyl group is preferred.

The alkyl groups in R ^h01 to R ^h04 may have a substituent. Examples of this substituent include an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group, an amino group, and a cyclic group.

The alkoxy group as a substituent for the alkyl group is preferably an alkoxy group having 1 to 5 carbon atoms, and more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group, or a tert-butoxy group. Preferably, a methoxy group and an ethoxy group are more preferable.
Examples of the halogen atom as a substituent for an alkyl group include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, and the like, with a fluorine atom being preferred.
A halogenated alkyl group as a substituent for an alkyl group is an alkyl group having 1 to 5 carbon atoms, such as a part of a hydrogen atom or Examples include groups entirely substituted with the above halogen atoms.
A carbonyl group as a substituent of an alkyl group is a group (>C=O) that substitutes a methylene group (-CH ₂ -) constituting the alkyl group.
Examples of the cyclic group as a substituent for the alkyl group include an aromatic hydrocarbon group and an alicyclic hydrocarbon group (which may be polycyclic or monocyclic). Examples of the aromatic hydrocarbon group here include the same aryl groups as R ^h01 to R ^h04 described below. In the alicyclic hydrocarbon group here, the monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a monocycloalkane. The monocycloalkane preferably has 3 to 6 carbon atoms, and specific examples include cyclopentane and cyclohexane. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a polycycloalkane, and the polycycloalkane preferably has 7 to 30 carbon atoms. Among these, the polycycloalkanes include polycycloalkanes having polycyclic skeletons such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane; condensed ring systems such as cyclic groups having steroid skeletons; More preferred are polycycloalkanes having a polycyclic skeleton.

In the formula (T-ca-1), the aryl group in R ^h01 to R ^h04 is a hydrocarbon group having at least one aromatic ring.
This aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n+2 π electrons, and may be monocyclic or polycyclic. The number of carbon atoms in the aromatic ring is preferably 5 to 30, more preferably 5 to 20, even more preferably 6 to 15, particularly preferably 6 to 12.
Specific examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene; aromatic heterocycles in which some of the carbon atoms constituting the aromatic hydrocarbon ring are substituted with heteroatoms; Can be mentioned. Examples of the heteroatom in the aromatic heterocycle include an oxygen atom, a sulfur atom, and a nitrogen atom. Specific examples of the aromatic heterocycle include a pyridine ring and a thiophene ring.
Specifically, the aryl group in R ^h01 to R ^h04 includes a group obtained by removing one hydrogen atom from the above-mentioned aromatic hydrocarbon ring or aromatic heterocycle; an aromatic compound containing two or more aromatic rings (for example, biphenyl , fluorene, etc.); a group in which one hydrogen atom of the aromatic hydrocarbon ring or aromatic heterocycle is substituted with an alkylene group (for example, benzyl group, phenethyl group, 1- arylalkyl groups such as naphthylmethyl group, 2-naphthylmethyl group, 1-naphthylethyl group, and 2-naphthylethyl group). The alkylene group bonded to the aromatic hydrocarbon ring or aromatic heterocycle preferably has 1 to 4 carbon atoms, more preferably 1 to 2 carbon atoms, and particularly preferably 1 carbon atom number. Among these, a group in which one hydrogen atom is removed from the aromatic hydrocarbon ring or aromatic heterocycle, and a group in which one hydrogen atom in the aromatic hydrocarbon ring or aromatic heterocycle is substituted with an alkylene group. A group is more preferable, and a group in which one hydrogen atom is removed from the aromatic hydrocarbon ring, and a group in which one hydrogen atom in the aromatic hydrocarbon ring is substituted with an alkylene group are even more preferable.

The aryl group in R ^h01 to R ^h04 may have a substituent. Examples of this substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group, an amino group, a cyclic group, and an alkylcarbonyloxy group.

The alkyl group as a substituent for the aryl group is preferably an alkyl group having 1 to 5 carbon atoms, and preferably a methyl group, ethyl group, propyl group, n-butyl group, or tert-butyl group.
Explanations regarding alkoxy groups, halogen atoms, halogenated alkyl groups, carbonyl groups, and cyclic groups as substituents for aryl groups are as follows: The explanation is the same as for groups and cyclic groups.
In the alkylcarbonyloxy group as a substituent for an aryl group, the number of carbon atoms in the alkyl moiety is preferably 1 to 5, and examples of the alkyl moiety include a methyl group, an ethyl group, a propyl group, an isopropyl group, and among these, methyl group, ethyl group is preferred, and methyl group is more preferred.

However, in the formula (T-ca-1), at least one of R ^h01 to R ^h04 is an aryl group which may have a substituent.
Specific examples of the cation represented by the formula (T-ca-1) are shown below.

In the formula (T-ca-2), the explanations for the alkyl group and aryl group in R ^h05 to R ^h07 are the same as the explanations for the alkyl group and aryl group in R ^h01 to R ^h04 described above, respectively.

However, in the formula (T-ca-2), at least one of R ^h05 to R ^h07 is an aryl group which may have a substituent.
Specific examples of the cation represented by the above formula (T-ca-2) are shown below.

- Regarding the anion moiety of component (T) Examples of the anion moiety of component (T) include hexafluorophosphate anion, trifluoromethanesulfonate anion, perfluorobutanesulfonate anion, and tetrakis(pentafluorophenyl)borate anion. etc.
Among these, hexafluorophosphate anion, trifluoromethanesulfonate anion, and perfluorobutanesulfonate anion are preferred, and hexafluorophosphate anion and trifluoromethanesulfonate anion are more preferred.

In the composition for forming a separation layer of the present embodiment, as the component (T), for example, the product names of SunAid SI-45, SI-47, SI-60, SI-60L, SI-80, SI-80L, SI- 100, SI-100L, SI-110, SI-110L, SI-145, I-150, SI-160, SI-180L, SI-B3, SI-B2A, SI-B3A, SI-B4, SI-300 ( The above are manufactured by Sanshin Chemical Industry Co., Ltd.); CI-2921, CI-2920, CI-2946, CI-3128, CI-2624, CI-2639, CI-2064 (manufactured by Nippon Soda Co., Ltd.); CP-66, CP-77 (manufactured by ADEKA Corporation); FC-520 (manufactured by 3M Company); K-PURE TAG-2396, TAG-2713S, TAG-2713, TAG-2172, TAG-2179, TAG-2168E, TAG-2722, TAG-2507, TAG-2678, TAG-2681, TAG-2679, TAG-2689, TAG-2690, TAG-2700, TAG-2710, TAG-2100, CDX-3027, CXC-1615, CXC-1616, CXC- 1750, CXC-1738, CXC-1614, CXC-1742, CXC-1743, CXC-1613, CXC-1739, CXC-1751, CXC-1766, CXC-1763, CXC-1736, CXC-1756, CXC-1821, CXC-1802-
Commercial products such as 60 and CXC-2689 (manufactured by KING INDUSTRY) can be used.

The composition for forming a separation layer of this embodiment may contain one or more types of component (T).
In the composition for forming a separation layer of this embodiment, among the above components, hexafluorophosphate, trifluoromethanesulfonate, and perfluorobutanesulfonate are preferable as the component (T), and trifluoromethanesulfonate is preferable. More preferred is a quaternary ammonium salt of trifluoromethanesulfonic acid.
When the composition for forming a separation layer of the present embodiment contains the (T) component, the content of the (T) component is 0.01 to 20 parts by mass with respect to 100 parts by mass of the (P) component. is preferable, 1 to 15 parts by weight is more preferable, and even more preferably 2 to 10 parts by weight.
The composition for forming a separation layer of this embodiment does not need to contain the component (T).

≪Photoacid generator≫
The separation layer forming composition of this embodiment may contain a photoacid generator.
Preferred examples of the photoacid generator include onium salt acid generators such as sulfonium salts.

Preferred cation moieties in the onium salt acid generator include sulfonium cations and iodonium cations.

Preferred anion moieties in the onium salt acid generator include tetrakis(pentafluorophenyl)borate ([B(C ₆ F ₅ ) ₄ ] ⁻ ); tetrakis[(trifluoromethyl)phenyl]borate ([B(C ₆ H ₄ CF ₃ ) ₄ ] ⁻ ); difluorobis(pentafluorophenyl)borate ([(C ₆ F ₅ ) ₂ BF ₂ ] ⁻ ); trifluoro(pentafluorophenyl)borate ([(C ₆ F ₅ ) BF ₃ ] ⁻ ); tetrakis(difluorophenyl)borate ([B(C ₆ H ₃ F ₂ ) ₄ ] ⁻ ), and the like. Also preferred is an anion represented by the following general formula (b0-2a).

［式中、Ｒ^ｂｆ０５は、置換基を有していてもよいフッ素化アルキル基である。ｎｂ^１は、１～５の整数である。］

[In the formula, R ^bf05 is a fluorinated alkyl group which may have a substituent. nb ¹ is an integer from 1 to 5. ]

In the formula (b0-2a), the fluorinated alkyl group in R ^bf05 preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and preferably has 1 to 5 carbon atoms. It is more preferable that Among these, R ^bf05 is preferably a fluorinated alkyl group having 1 to 5 carbon atoms, more preferably a perfluoroalkyl group having 1 to 5 carbon atoms, and even more preferably a trifluoromethyl group or a pentafluoroethyl group.
In the formula (b0-2a), nb ¹ is preferably an integer of 1 to 4, more preferably 2 to 4, and most preferably 3.
When nb ¹ is 2 or more, the plurality of R ^bf05s may be the same or different.

The composition for forming a separation layer of this embodiment may contain one or more types of photoacid generators.
When the composition for forming a separation layer of the present embodiment contains a photoacid generator, the content of the photoacid generator should be 0.01 to 20 parts by mass based on 100 parts by mass of component (P). is preferable, 1 to 15 parts by weight is more preferable, and even more preferably 2 to 10 parts by weight.
The separation layer forming composition of this embodiment does not need to contain a photoacid generator.

≪Photosensitizer component≫
The separation layer forming composition of this embodiment may contain a photosensitizer component.
As the photosensitizer component (hereinafter also referred to as "component (C)"), for example, esterification of a phenolic hydroxyl group-containing compound represented by the following chemical formula (c1) and a 1,2-naphthoquinonediazide sulfonic acid compound Reaction products (hereinafter also referred to as "component (C1)") are preferred.

Examples of the 1,2-naphthoquinonediazide sulfonic acid compound include a 1,2-naphthoquinonediazide-5-sulfonyl compound, a 1,2-naphthoquinonediazide-4-sulfonyl compound, and a 1,2-naphthoquinonediazide-5-sulfonyl compound. Compounds are preferred.

Preferred specific examples of component (C1) are shown below.

［式（ｃ１－１）中、Ｄ^１～Ｄ^４は、それぞれ独立に水素原子、又は１，２－ナフトキノンジアジド－５－スルホニル基を表す。Ｄ^１～Ｄ^４のうち少なくとも１つは、１，２－ナフトキノンジアジド－５－スルホニル基を表す。］

[In formula (c1-1), D ¹ to D ⁴ each independently represent a hydrogen atom or a 1,2-naphthoquinonediazide-5-sulfonyl group. At least one of D ¹ to D ⁴ represents a 1,2-naphthoquinonediazide-5-sulfonyl group. ]

The esterification rate of the component (C1) is preferably 50 to 70%, more preferably 55 to 65%. When the esterification rate is 50% or more, film loss after alkaline development is further suppressed and the residual film ratio increases. If the esterification rate is 70% or less, storage stability will be further improved.
The "esterification rate" here refers to the compound represented by the above formula (c1-1), in which D ¹ to D ⁴ are 1,2-naphthoquinonediazide-5-sulfonyl. Indicates the percentage of substitution with groups.
The component (C1) is preferable because it is very inexpensive and can provide high sensitivity.

Further, as the component (C), other photosensitizer components other than the component (C1) (hereinafter also referred to as "component (C2)") can be used.
As the component (C2), for example, the following phenolic hydroxyl group-containing compound ((c2-phe) component) and a 1,2-naphthoquinonediazide sulfonic acid compound (preferably a 1,2-naphthoquinonediazide-5-sulfonyl compound) or 1,2-naphthoquinonediazide-4-sulfonyl compound).

Examples of the (c2-phe) component include tris(4-hydroxyphenyl)methane, bis(4-hydroxy-3-methylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-2,3,5 -trimethylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-4-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-3-hydroxyphenylmethane , bis(4-hydroxy-3,5-dimethylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-4-hydroxyphenylmethane, bis(4-hydroxy-2,5 -dimethylphenyl)-3-hydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-3,4-dihydroxy Phenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-3,4-dihydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-2,4-dihydroxyphenylmethane, bis(4-dimethylphenyl)-2,4-dihydroxyphenylmethane, -hydroxyphenyl)-3-methoxy-4-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-4-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methyl phenyl)-3-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-2-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-3,4 -dihydroxyphenylmethane, bis(2,3,5-trimethyl-4-hydroxyphenyl)-2-hydroxyphenylmethane, 1-[1-(4-hydroxyphenyl)isopropyl]-4-[1,1-bis( 4-hydroxyphenyl)ethyl]benzene, 1-[1-(3-methyl-4-hydroxyphenyl)isopropyl]-4-[1,1-bis(3-methyl-4-hydroxyphenyl)ethyl]benzene, 2 -(2,3,4-trihydroxyphenyl)-2-(2',3',4'-trihydroxyphenyl)propane, 2-(2,4-dihydroxyphenyl)-2-(2',4' -dihydroxyphenyl)propane, 2-(4-hydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2-(3-fluoro-4-hydroxyphenyl)-2-(3'-fluoro-4'- hydroxyphenyl)propane, 2-(2,4-dihydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2-(2,3,4-trihydroxyphenyl)-2-(4'-hydroxyphenyl) Propane, 2-(2,3,4-trihydroxyphenyl)-2-(4'-hydroxy-3',5'-dimethylphenyl)propane, bis(2,3,4-trihydroxyphenyl)methane, bis (2,4-dihydroxyphenyl)methane, 2,3,4-trihydroxyphenyl-4'-hydroxyphenylmethane, 1,1-di(4-hydroxyphenyl)cyclohexane, 2,4-bis[1-(4 -hydroxyphenyl)isopropyl]-5-hydroxyphenol and the like.

The component (C) contained in the composition for forming a separation layer of this embodiment may be used alone or in combination of two or more. In the composition for forming a separation layer of this embodiment, among the above components, it is preferable to use component (C1) as component (C).
When the composition for forming a separation layer of the present embodiment contains component (C), the content of component (C) is preferably 95 parts by mass or less with respect to 100 parts by mass of component (P), More preferably 50 to 95 parts by weight, even more preferably 60 to 90 parts by weight.
The separation layer forming composition of this embodiment does not need to contain component (C).

≪Organic solvent component≫
The separation layer forming composition of the present embodiment may contain an organic solvent component (hereinafter also referred to as "component (S)") in order to adjust coating workability and the like.
As the component (S), for example, linear hydrocarbons such as hexane, heptane, octane, nonane, methyloctane, decane, undecane, dodecane, tridecane; branched hydrocarbons having 4 to 15 carbon atoms; Cyclic hydrocarbons such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decahydronaphthalene, tetrahydronaphthalene; p-menthane, o-menthane, m-menthane, diphenylmenthane, 1,4-terpine, 1,8-terpine, bornane , norbornane, pinane, tujan, callan, longifolene, geraniol, nerol, linalool, citral, citronellol, menthol, isomenthol, neomenthol, α-terpineol, β-terpineol, γ-terpineol, terpinen-1-ol, terpinen-4 -ol, dihydroterpinyl acetate, 1,4-cineole, 1,8-cineole, borneol, carvone, ionone, thujone, camphor, d-limonene, l-limonene, dipentene, and other terpene solvents; γ-butyrolactone, etc. lactones; ketones such as acetone, methyl ethyl ketone, cyclohexanone (CH), methyl-n-pentyl ketone, methyl isopentyl ketone, 2-heptanone; polyhydric alcohols such as ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol, etc. ; Compounds having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate; monomethyl ether, monoethyl ether, mono of the polyhydric alcohols or compounds having the ester bond; Derivatives of polyhydric alcohols such as monoalkyl ethers such as propyl ether and monobutyl ether, or compounds having ether bonds such as monophenyl ether (among them, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME) ); cyclic ethers such as dioxane, methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methoxypropyl acetate, methoxybutyl acetate, methyl pyruvate, ethyl pyruvate, methoxy Esters such as methyl propionate and ethyl ethoxypropionate; aromatic organic solvents such as anisole, ethylbenzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenetol, butylphenyl ether, and the like.
The composition for forming a separation layer of this embodiment may contain one or more types of (S) components.

In the composition for forming a separation layer of the present embodiment, the amount of component (S) used is not particularly limited, and is appropriately set at a concentration that can be coated on a supporting substrate, etc., depending on the coating film thickness and coatability. For example, the content of the component (P) in the composition for forming a separation layer is 70% by mass or less, preferably in the range of 5 to 50% by mass, based on the total mass (100% by mass) of the composition. Component (S) is used in an amount of more preferably 10 to 50% by mass.

≪Surfactant≫
The separation layer forming composition of this embodiment may contain a surfactant in order to adjust coating workability and the like.
Examples of the surfactant include silicone surfactants and fluorine surfactants. Examples of silicone surfactants include BYK-077, BYK-085, BYK-300, BYK-301, BYK-302, BYK-306, BYK-307, BYK-310, BYK-320, BYK-322, BYK -323, BYK-325, BYK-330, BYK-331, BYK-333, BYK-335, BYK-341, BYK-344, BYK-345, BYK-346, BYK-348, BYK-354, BYK-355 , BYK-356, BYK-358, BYK-361, BYK-370, BYK-371, BYK-375, BYK-380, BYK-390 (all manufactured by BYK Chemie), etc. can be used. Examples of fluorine-based surfactants include F-114, F-177, F-410, F-411, F-450, F-493, F-494, F-443, F-444, F-445, and F-445. -446, F-470, F-471, F-472SF, F-474, F-475, F-477, F-478, F-479, F-480SF, F-482, F-483, F-484 , F-486, F-487, F-172D, MCF-350SF, TF-1025SF, TF-1117SF, TF-1026SF, TF-1128, TF-1127, TF-1129, TF-1126, TF-1130, TF -1116SF, TF-1131, TF-1132, TF-1027SF, TF-1441, TF-1442 (manufactured by DIC Corporation); Polyfox series PF-636, PF-6320, PF-656, PF-6520 (all manufactured by Omnova), etc. can be used.

The composition for forming a separation layer of this embodiment may contain one type of surfactant or two or more types of surfactants.
When the composition for forming a separation layer of the present embodiment contains a surfactant, the content of the surfactant is preferably 0.01 to 10 parts by mass based on 100 parts by mass of component (P). , more preferably 0.02 to 2 parts by mass, and even more preferably 0.03 to 1 part by mass.
If the content of the surfactant is within the above-mentioned preferred range, a highly flat separation layer can be easily formed when the composition for forming a separation layer is applied onto a supporting substrate.
The separation layer forming composition of this embodiment does not need to contain a surfactant.

According to the composition for forming a separation layer of the present embodiment, by containing the component (P1) as a resin component, a separation layer that is highly photoresponsive to short wavelength light (for example, 400 nm or less) is formed. be able to. Therefore, by forming a separation layer using the composition for forming a separation layer of this embodiment, the support substrate can be easily separated by irradiation with a short wavelength laser after manufacturing electronic components on the support substrate. .
It is known that a long wavelength laser (for example, 532 nm) causes a thermal decomposition reaction due to a photothermal reaction. Therefore, in the laminate 20 as shown in FIG. 2, when the separation layer 2 is irradiated with a long wavelength laser from the supporting base 1 side, there is a concern that thermal damage to the temporarily fixed object (wiring layer 3 in FIG. 2) may occur. Ru.
On the other hand, by forming a separation layer using the composition for forming a separation layer of this embodiment, the support substrate 1 can be separated by irradiation with a short wavelength laser (for example, 308 nm). Therefore, compared to the case where a long wavelength laser is used, thermal damage to the temporarily fixed object can be reduced. The separation layer forming composition of this embodiment can be suitably applied to an RDL first process as shown in FIG.

(Supporting base with separation layer)
A support base with a separation layer according to a second aspect of the present invention includes a support base that transmits light and a separation layer formed on the support base. The separation layer is a cured product of the separation layer forming composition according to the first aspect.

FIG. 1 shows an example of the support base with a separation layer of this embodiment. The support base 10 with a separation layer includes a support base 1 and a separation layer 2 . The separation layer 2 is made of a cured product of the composition for forming a separation layer according to the first aspect, and has high photoreactivity to short wavelength light (for example, 400 nm or less).

<Support base>
The supporting substrate has the property of transmitting light. The support base is a member for temporarily fixing an object to be temporarily fixed, supports the object to be temporarily fixed via a separation layer, and various treatments are performed on the object to be temporarily fixed on the support base. Therefore, it is preferable that the support base has the strength necessary to withstand various treatments of the temporarily fixed object (for example, a semiconductor package). Further, the supporting substrate is preferably one that transmits light having a wavelength that can alter the quality of the separation layer.
As the material of the supporting base, for example, glass, silicon, acrylic resin, etc. are used. Examples of the shape of the support base include, but are not limited to, rectangular and circular shapes.
In addition, as the support base, in order to achieve higher density integration and improve production efficiency, it is also possible to use a circular support base with an enlarged size, or a large panel with a rectangular shape in top view.

<Separation layer>
The separation layer can be formed using the separation layer forming composition according to the first aspect. The separation layer is composed of a cured product of the separation layer forming composition according to the first aspect. The separation layer can be obtained by forming a separation layer-forming composition layer using the separation layer-forming composition according to the first aspect, and then firing the separation layer-forming composition layer. This separation layer changes in quality by absorbing light transmitted through the supporting base.
The separation layer may be a layer containing a material that does not have a structure that absorbs light as long as it does not impair the essential characteristics of the present invention, but from the viewpoint of photoreactivity and separation properties, Preferably, it is formed only from a material that absorbs light.

The cured product of the composition for forming a separation layer refers to a product obtained by baking and curing the composition for forming a separation layer according to the first aspect. This cured product can be formed by firing the composition for forming a separation layer according to the first embodiment in an atmospheric environment, that is, in an environment where oxygen is present. When the composition for forming a separation layer is fired (heated), a crosslinking reaction of the component (P1) in the composition for forming a separation layer proceeds, and a crosslinked product of the component (P1) is formed. As a result, the composition for forming a separation layer is cured, and a separation layer that is a cured product of the composition for forming a separation layer is formed. The separation layer has a high absorption rate for light having a wavelength of 400 nm or less (for example, 308 nm), and can be altered by irradiation with light having a wavelength of 400 nm or less.

"Deterioration" of the separation layer refers to a phenomenon in which the separation layer can be destroyed by external force, or the adhesive strength between the separation layer and a layer in contact with it is reduced. The separation layer becomes brittle by absorbing light and loses its strength or adhesion before being exposed to light. Such deterioration of the separation layer occurs due to decomposition, change in steric configuration, dissociation of functional groups, etc. due to the energy of absorbed light.

The thickness of the separation layer is, for example, preferably in the range of 0.05 μm or more and 50 μm or less, more preferably in the range of 0.1 μm or more and 10 μm or less, and even more preferably in the range of 0.2 μm or more and 1 μm or less.
As long as the thickness of the separation layer is within the above-mentioned preferred range, desired alteration can be caused in the separation layer by short-time light irradiation and low-energy light irradiation. The thickness of the separation layer is particularly preferably 1 μm or less from the viewpoint of productivity.

In the support base 10 with a separation layer shown in FIG. 1, it is preferable that the surface of the separation layer 2 on the opposite side that contacts the support base 1 is flat (no irregularities are formed). This facilitates temporary fixation of the object to be temporarily fixed to the surface of the separation layer 2.

The support substrate with a separation layer of this embodiment can be manufactured by a method similar to the method described in [Separation layer forming step] described below.

The support substrate with a separation layer of the present embodiment includes a separation layer formed using the composition for forming a separation layer according to the first aspect. The separation layer has high photoreactivity to short-wavelength light (for example, 400 nm or less), so after processing the temporarily fixed object temporarily fixed on the separation layer, short-wavelength light is used to separate the supporting substrate. can do. Therefore, compared to the case of using long-wavelength light, thermal damage to the temporarily fixed object due to light irradiation can be reduced.

(laminate)
A laminate according to a third aspect of the present invention includes a support base that transmits light, a separation layer formed on the support base, and a temporarily fixed object temporarily fixed on the separation layer. . The separation layer is a cured product of the separation layer forming composition according to the first aspect.

FIG. 2 shows an example of the laminate of this embodiment. The laminate 20 includes a support base 1, a separation layer 2, and a wiring layer 3 as a temporary fixing object, which are laminated in this order.

The explanation about the supporting base is the same as that for <Supporting base> above.
The description of the separation layer is the same as the description of <Separation layer> above.

<Temporarily fixed object>
The object to be temporarily fixed is temporarily fixed to the supporting base via the separation layer. The temporarily fixed object is not particularly limited. The temporarily fixed object may be an unprocessed object before being processed on the support base. Alternatively, the temporary fixation target may be a processed workpiece that has been processed on the support base.

The temporarily fixed object may include a wiring layer. Alternatively, the temporarily fixed object may include a semiconductor element in addition to the wiring layer. The semiconductor element may be sealed in a sealing material. In this case, the semiconductor element constitutes a sealing layer together with the sealing material.

≪Wiring layer≫
FIG. 2 shows an example of a laminate in which the object to be temporarily fixed is a wiring layer. A laminate 20 shown in FIG. 2 is a laminate in which a support base 1, a separation layer 2, and a wiring layer 3 are laminated in this order.

The wiring layer is also called RDL (Redistribution Layer), and is a thin film wiring body that constitutes wiring connected to a semiconductor element. The wiring layer may have a single layer or multiple layer structure.

The wiring layer may be a dielectric material in which wiring is formed using a conductive material.
Examples of the material constituting the dielectric include, but are not limited to, inorganic materials such as silicon oxide (SiOx), and photosensitive resins such as photosensitive epoxy.
Materials constituting the conductor include single metals, alloys, and metal compounds. Specific examples of materials constituting the conductor include chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, arsenic, ruthenium, rhodium, palladium, silver, cadmium, indium, tin, antimony, Metals such as osmium, iridium, platinum, gold, mercury, thallium, lead, bismuth, molybdenum, titanium, tungsten, tantalum, aluminum; alloys containing these metals; and indium tin oxide (ITO), indium zinc oxide (IZO) ), metal compounds including metal oxides, and the like.

The wiring layer can be formed by the method described in "Wiring layer forming process" below.
Another layer may or may not be provided between the separation layer and the wiring layer.

≪Semiconductor device≫
FIG. 3 shows an example of a laminate in which the object to be temporarily fixed includes a wiring layer and a semiconductor element. A laminate 30 shown in FIG. 3 is a laminate in which a support base 1, a separation layer 2, a wiring layer 3, and a semiconductor element 4 are stacked in this order.

The type of semiconductor element is not particularly limited, and it may be an active element or a passive element, and multiple types of elements may be mounted. Examples of active elements include transistors, ICs, LSIs (Large-Scale Integration), MEMS (Micro Electro Mechanical Systems), relays, LED display devices, LED lighting, light-emitting elements such as OLEDs, and sensors. Examples of passive elements include resistors, capacitors, inductors, piezoelectric elements, and batteries.

The number of semiconductor elements mounted on the wiring layer is not particularly limited, and any number of semiconductor elements can be mounted. The semiconductor element mounted on the wiring layer is electrically connected to the wiring in the wiring layer. An insulating adhesive layer may be interposed between the wiring layer and the semiconductor element.

≪Sealing layer≫
FIG. 4 shows an example of a laminate in which the object to be temporarily fixed includes a wiring layer and a sealing layer. A laminate 40 shown in FIG. 4 is a laminate in which a support base 1, a separation layer 2, a wiring layer 3, and a sealing layer 6 are laminated in this order. The sealing layer 6 includes the semiconductor element 4 and the sealing material 5. The sealing layer 6 can be formed by sealing the semiconductor 4 with the sealing material 5.

As the sealing material, for example, a resin composition can be used. The resin used for the sealing material is not particularly limited as long as it can seal the semiconductor element. The sealing material is preferably an insulating material, and for example, an insulating resin can be used. Examples of the resin include epoxy resins and silicone resins.
In addition to the resin, the sealing material may contain other components such as fillers. Examples of the filler include spherical silica particles.

The laminate of this embodiment includes a separation layer composed of a cured product of the composition for forming a separation layer according to the first aspect. The separation layer has high photoreactivity to short wavelength light (for example, 400 nm or less), and is altered by irradiation with short wavelength light. Therefore, the supporting substrate can be separated from the laminate by irradiation with short wavelength light. As a result, the laminate of this embodiment can reduce thermal damage to the temporarily fixed object during the separation operation of the support base.

(Processing method for temporarily fixed object)
A method for processing a temporarily fixed object according to a fourth aspect of the present invention includes applying the composition for forming a separation layer according to the first aspect to one surface of a light-transmitting support base, and forming the separation layer. a step of forming a separation layer by curing the composition for use in the separation layer (hereinafter also referred to as "separation layer forming step"), and a step of temporarily fixing the object to be temporarily fixed onto the separation layer (hereinafter referred to as "temporary fixing step"). ), a step of treating the temporarily fixed object (hereinafter also referred to as a "treatment step"), and irradiating the separation layer with light through the support base to alter the quality of the separation layer. The method includes a step of separating the support base from the temporarily fixed object after the treatment (hereinafter also referred to as a "separation step").

[Separation layer formation process]
The separation layer forming step is a step of forming a separation layer by applying the separation layer forming composition according to the first aspect to one surface of the support base and curing the separation layer forming composition. be.
For example, as shown in FIG. 1, a separation layer 2 is formed on a support base 1 to obtain a support base 10 with a separation layer.

The method for applying the composition for forming a separation layer onto one surface of the supporting substrate 1 is not particularly limited, and examples thereof include methods such as spin coating, dipping, roller blading, spray coating, and slit coating.

In the separation layer forming step, first, a composition for forming a separation layer is applied to one side of the support substrate to form a composition layer for forming a separation layer on the support substrate. After coating the composition for forming a separation layer on a supporting substrate, the component (S) may be removed from the composition layer for forming a separation layer by heating or the like to form a film. The (S) component can be removed by, for example, baking treatment at a temperature of 80 to 150° C. for 120 to 360 seconds.
Thereafter, the composition layer for forming a separation layer on the supporting substrate is cured in an atmospheric environment to obtain a separation layer. The composition for forming a separation layer can be cured by baking the composition layer for forming a separation layer.

The temperature at which the separation layer forming composition layer is fired is preferably 180°C or higher, more preferably 200°C or higher, and even more preferably 230°C or higher. By setting the firing temperature to the above-mentioned preferable lower limit or higher, the crosslinking reaction of the component (P1) in the composition for forming a separation layer can sufficiently proceed, and a stable cured product can be obtained. Thereby, the photoreactivity to light having a wavelength of 400 nm or less (for example, 308 nm) can be increased.
The upper limit of the firing temperature is not particularly limited, but is preferably, for example, 300°C or lower, more preferably 280°C or lower, even more preferably 270°C or lower, and particularly preferably 260°C or lower.

The firing time is not particularly limited as long as it is enough to sufficiently cure the composition layer for forming a separation layer. The firing time can be, for example, 3 minutes or more and 3 hours or less. From the viewpoint of obtaining a stable cured product, the firing time is preferably 5 minutes or more, more preferably 10 minutes or more. From the viewpoint of improving process efficiency, the upper limit of the firing time is, for example, preferably 1 hour or less, more preferably 30 minutes or less.

[Temporary fixing process]
The temporary fixing step is a step of temporarily fixing the object to be temporarily fixed on the separation layer.

The method of temporary fixation can be selected as appropriate depending on the type of the object to be temporarily fixed. For example, when the object to be temporarily fixed is a substrate or a semiconductor element, the object to be temporarily fixed may be temporarily fixed to the separation layer using a known adhesive. When the object to be temporarily fixed is a wiring layer, the wiring layer may be formed on the separation layer using a method described in "Wiring layer forming process" described later. FIG. 2 shows a state in which a wiring layer 3 is formed on the separation layer 2 as an object to be temporarily fixed.

[Processing process]
The processing step is a step of processing the temporarily fixed object.

The method for processing the temporarily fixed object is not particularly limited, and can be appropriately selected depending on the type and purpose of the temporarily fixed object. Processing of temporary fixing objects includes various processes such as formation of bumps, wiring, through holes, through hole vias, etc.; mounting of semiconductor elements; sealing of semiconductor elements; formation of insulating films; formation of rewiring layers. may be included.

[Separation process]
The separation step is a step in which the support substrate is separated from the temporarily fixed object after the treatment by irradiating the separation layer with light through the support substrate to alter the quality of the separation layer.

FIG. 5 is a schematic diagram illustrating the separation process. In the laminate 40 shown in FIG. 5, the object to be temporarily fixed after processing is composed of the wiring layer 3 and the sealing layer 6. In the separation step, the separation layer 2 is irradiated with light (arrow) through the support base 1 to alter the quality of the separation layer 2 .
FIG. 6 shows the temporarily fixed objects (wiring layer 3 and sealing layer 6 (electronic component 50)) after the support base 1 is separated.

The wavelength of light that can alter the quality of the separation layer is, for example, 400 nm or less. The wavelength of the light used in the separation step is, for example, 200 to 400 nm, preferably 250 to 400 nm, more preferably 250 to 360 nm, even more preferably 300 to 360 nm. A specific example is light with a wavelength of 308 nm.
The irradiation light is preferably a laser beam, such as a solid laser such as a YAG laser, a ruby laser, a glass laser, a YVO4 laser, an LD laser, or a fiber laser; a liquid laser such as a dye laser; a CO ₂ laser, an excimer laser, an Ar laser, or a He laser. A gas laser such as a -Ne laser; a semiconductor laser; a free electron laser, etc. can be used.
Among these, an all-solid-state laser (wavelength: 355 nm) using an optically pumped semiconductor laser, a YAG laser (wavelength: 355 nm), or an excimer laser is preferable.
Examples of excimer lasers include F2 excimer laser (wavelength: 157 nm), ArF excimer laser (wavelength: 193 nm), KrF excimer laser (wavelength: 248 nm), XeCl excimer laser (wavelength: 308 nm), and XeF excimer laser (wavelength: 351 nm). ). Among these, XeCl excimer laser (wavelength: 308 nm) is preferable.

Laser light irradiation conditions can be selected as appropriate depending on the type of laser.
The average output value of the laser beam is, for example, preferably 1.0 W or more and 5.0 W or less, more preferably 3.0 W or more and 4.0 W or less. The repetition frequency of the laser beam is preferably 30 kHz or more and 80 kHz or less, more preferably 40 kHz or more and 70 kHz or less. The scanning speed of the laser beam is preferably 1 mm/s or more and 1000 mm/s or less. The cumulative amount of laser light is, for example, 50 to 1000 mJ/cm ² .

After irradiating the separation layer with light to alter the separation layer, the supporting substrate is separated from the object to be temporarily fixed.
For example, the support base and the temporary fixation target can be separated by applying force in a direction in which the support base and the temporary fixation target are separated from each other. As a specific method, for example, one of the supporting base and the temporarily fixed object is fixed to the stage, and the other is held by suction with a separation plate equipped with a suction pad (for example, a bellows pad, etc.). lift. Thereby, the support base and the temporarily fixed object can be separated.
The force applied to the laminate during separation may be appropriately adjusted depending on the size of the laminate and is not limited. For example, in the case of a laminate with a diameter of about 300 mm, the support base and the object to be temporarily fixed can be separated by applying a force of about 0.1 to 5 kgf (0.98 to 49 N).

In the method for processing a temporary fixing object according to the present embodiment, a temporary fixing object is temporarily fixed on a separation layer formed of a cured product of the composition for forming a separation layer according to the first aspect. Therefore, after processing the temporary fixation object, the separation layer can be modified with irradiation light of a short wavelength (for example, 400 nm or less), and the supporting substrate can be separated. Thereby, thermal damage to the temporarily fixed object due to the irradiation light can be reduced.

(Method for manufacturing laminate)
The method for producing a laminate according to the fifth aspect of the present invention includes applying the composition for forming a separation layer according to the first aspect on one surface of a supporting base that transmits light, and applying the composition for forming a separation layer according to the first aspect. The method includes a step of forming a separation layer by curing a material (separation layer formation step), and a step of forming a wiring layer on the separation layer (hereinafter also referred to as "wiring layer formation step").

[Separation layer formation process]
The separation layer forming step can be performed in the same manner as the [separation layer forming step] in the above (method for processing temporary fixation object). As shown in FIG. 1, a separation layer 2, which is a cured product of the composition for forming a separation layer, is formed on a support substrate 1 using a composition for forming a separation layer, thereby obtaining a support substrate 10 with a separation layer.

[Wiring layer formation process]
The wiring layer forming step is a step of forming a wiring layer on the separation layer.
For example, as shown in FIG. 2, a wiring layer 3 is formed on a separation layer 2 to obtain a laminate 20 in which a support base 1, a separation layer 2, and a wiring layer 3 are laminated in this order. The laminate 20 is a laminate applied to the RDL first process.

The wiring layer can be formed by a known method. For example, a dielectric layer is formed on the separation layer. Examples of the material for forming the dielectric layer include inorganic materials such as silicon oxide (SiO _x ), photosensitive resins, and the like. The dielectric layer made of silicon oxide can be formed by, for example, a sputtering method, a vacuum evaporation method, or the like. The dielectric layer made of a photosensitive resin can be formed by applying the photosensitive resin to a separation layer and forming a film using a method such as spin coating, dipping, roller blading, spray coating, or slit coating.

Subsequently, wiring is formed using a conductor in the dielectric layer. As the conductor, for example, those listed above can be used. For forming the wiring, for example, known semiconductor process techniques such as lithography processing such as photolithography (resist lithography) and etching processing can be used. Examples of the lithography process include a lithography process using a positive resist material and a lithography process using a negative resist material.

By repeating the formation of a dielectric layer and the formation of wiring, a wiring layer with a multilayer structure can be formed.

[Other processes]
The method for manufacturing a laminate of this embodiment may include other steps in addition to the above steps. Other processes include a semiconductor element mounting process and a sealing layer forming process.

≪Semiconductor element mounting process≫
The semiconductor element mounting process is a process of mounting a semiconductor element on the wiring layer.
For example, as shown in FIG. 3, a laminate 30 in which a semiconductor element 4 is mounted on a wiring layer 3, and a support base 1, a separation layer 2, a wiring layer 3, and a semiconductor element 4 are laminated in this order. get.

The semiconductor element is mounted on the wiring layer with the connection terminal provided on one main surface facing the wiring layer. The connection terminal of the semiconductor element is electrically connected to the wiring in the wiring layer. The semiconductor element may be mounted on the wiring layer using an insulating adhesive. The semiconductor element may be mounted using a chip mounter or the like.

≪Sealing layer formation process≫
The sealing layer forming step is a step of sealing the semiconductor element mounted on the wiring layer with a sealing material to form a sealing layer.
For example, as shown in FIG. 4, a semiconductor element 4 mounted on a wiring layer 3 is sealed using a sealing material 5 to form a sealing layer 6. Thereby, a laminate 40 is obtained in which the supporting base 1, the separation layer 2, the wiring layer 3, and the sealing layer 6 are laminated in this order.

The sealing layer can be formed, for example, by supplying a heated sealing material onto the wiring layer so as to cover the semiconductor element and compression molding the heated sealing material. It is preferable that the sealing material is supplied onto the wiring layer while maintaining a high viscosity state.
The heating temperature of the sealing material is, for example, 130 to 170°C.
The pressure during compression molding is, for example, 50 to 500 N/cm ² .

It is preferable that the sealing layer is not provided for each individual semiconductor element, but is provided so as to cover all the semiconductor elements mounted on the wiring layer.

(Manufacturing method of electronic components)
A method for manufacturing an electronic component according to a sixth aspect of the present invention includes a step of manufacturing a laminate (hereinafter also referred to as a "laminate manufacturing process") by a method for manufacturing a laminate according to the fifth aspect; The method includes a step of separating the support substrate from the laminate by irradiating the separation layer with light through the support substrate to alter the quality of the separation layer (hereinafter also referred to as a "separation step").

[Laminated body manufacturing process]
The laminate manufacturing process is a process of manufacturing a laminate using the laminate manufacturing method according to the fifth aspect. The laminate is preferably manufactured by the separation layer forming step, wiring layer forming step, semiconductor element mounting step, and sealing layer forming step. The laminate obtained in the laminate manufacturing process is, for example, a laminate 40 shown in FIG. 4 in which the supporting base 1, the separation layer 2, the wiring layer 3, and the sealing layer 6 are laminated in this order. It is preferable that

[Separation process]
The separation step is a step of separating the support substrate from the laminate by irradiating the separation layer with light through the support substrate to alter the quality of the separation layer.
For example, as shown in FIG. 5, the separation layer 2 is altered in quality by irradiating the separation layer 2 with light (arrow) through the support base 1. Thereby, the supporting base 1 can be easily peeled off from the laminate 40. Therefore, by separating the support base 1 from the laminate 40, an electronic component 50 (semiconductor package) as shown in FIG. 6 can be obtained.

The separation step can be performed in the same manner as the [separation step] in the above-mentioned (method for processing temporarily fixed object).

[Other processes]
The method for manufacturing an electronic component according to the present embodiment may include other steps in addition to the above steps. Other steps include a removal step and the like.

≪Removal process≫
The removal step is a step of removing the separation layer adhering to the wiring layer after the separation step.
In the electronic component after the separation process, a separation layer may remain in the wiring layer. Therefore, after the separation step, a process may be performed to remove the separation layer adhering to the wiring layer.
Examples of methods for removing the separation layer adhering to the wiring layer include a method of removing residues of the separation layer using a cleaning liquid, and a method of irradiating the wiring layer with plasma.
As the cleaning liquid, a cleaning liquid containing an organic solvent is suitably used. As the organic solvent, it is preferable to use an organic solvent that is included in the composition for forming a separation layer. Examples of plasma include oxygen plasma.

The method for manufacturing an electronic component according to the present embodiment may further include a step of subjecting the electronic component to treatments such as forming solder balls, dicing, and forming an oxide film.

EXAMPLES Hereinafter, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited to these Examples.

<Preparation of composition for forming separation layer>
(Example 1)
The components shown in Table 1 were mixed and dissolved to prepare a composition for forming a separation layer.

In Table 1, each abbreviation has the following meaning. The numbers in brackets are the amount (parts by mass).

(P)-1: Cashew benzoxazine resin (CR-276 (trade name), Tohoku Kako Co., Ltd.).

(S)-1: Butyl acetate.

<Preparation of adhesive composition>
Each component shown in Table 2 was mixed and dissolved to prepare an adhesive composition.

(P)-2: SEBS resin Septon 8004 (Kuraray Co., Ltd.). Weight average molecular weight (Mw) 100,000.
(Ad)-1: Hindered phenol antioxidant (Irganox 1010 (trade name), manufactured by BASF).
(S)-2: decahydronaphthalene.

<Manufacture of laminate>
The separation layer forming composition of Example 1 was applied to a glass support substrate (size 10 cm x 10 cm, thickness 0.7 mm, E-XG, manufactured by CORNING) at 100°C for 5 minutes and at 250°C for 10 minutes. Heated. Thereby, a separation layer with a thickness of 0.2 μm was formed on the glass support substrate.
Next, the adhesive composition was applied to a silicon substrate (size 10 cm x 10 cm) and heated at 160° C. for 4 minutes. As a result, an adhesive layer with a thickness of 20 μm was formed on the silicon substrate.
Next, using a die bonder (manufactured by TRESKY), the glass supporting base with the separation layer was pressure-bonded to the substrate with the adhesive layer. The pressure bonding was performed by heating the plate of the die bonder to 50° C. and pressing with a pressure of 350 g for 90 seconds.

[Evaluation of separability]
Using IPEX848 (308nm A laser beam of 308 nm (laser beam irradiation amount: 250 mJ/cm ² ) was irradiated. After that, an attempt was made to separate the silicon substrate and the glass support base.
As a result, it was confirmed that the silicon substrate and the glass support base could be separated well.

1 Support base 2 Separation layer 3 Wiring layer 4 Semiconductor element 5 Sealing material 6 Sealing layer 10 Support base with separation layer 20, 30, 40 Laminated body 50 Electronic component

Claims (11)

In a laminate including a separation layer between a light-transmitting support base and an object to be temporarily fixed, the support base can be separated from the laminate by being altered by irradiation with light from the support base side. A composition for forming a separation layer for forming the separation layer, comprising:
A composition for forming a separation layer, which contains a compound (P1) represented by the following general formula (p1).

[In the formula, Lb ¹ represents an aliphatic hydrocarbon group having 1 to 10 carbon atoms; Rb ¹ and Rb ² each independently represent a hydrocarbon group having 12 to 24 carbon atoms; Rb ³ to Rb ⁶ each independently represents a hydrogen atom or a substituent. ] a supporting base that transmits light;
a separation layer formed on the supporting substrate;
The separation layer is a cured product of the separation layer forming composition according to claim 1.
Support substrate with separation layer. a supporting base that transmits light;
a separation layer formed on the supporting base;
a temporarily fixed object temporarily fixed on the separation layer,
The separation layer is a cured product of the separation layer forming composition according to claim 1.
laminate. The laminate according to claim 3, wherein the object to be temporarily fixed includes a wiring layer. The temporarily fixed object includes a wiring layer and a semiconductor element,
the supporting base, the separation layer, the wiring layer, and the semiconductor element are stacked in this order;
The laminate according to claim 4. A step of forming a separation layer by applying the separation layer forming composition according to claim 1 on one surface of a light-transmitting support base and curing the separation layer forming composition;
temporarily fixing a temporary fixing object on the separation layer;
processing the temporarily fixed object;
irradiating the separation layer with light through the support base to alter the quality of the separation layer, thereby separating the support base from the temporarily fixed object after the treatment;
A method of processing a temporarily fixed object, including: A step of forming a separation layer by applying the separation layer forming composition according to claim 1 on one surface of a light-transmitting support base and curing the separation layer forming composition;
forming a wiring layer on the separation layer;
A method for manufacturing a laminate, including: The method for manufacturing a laminate according to claim 7, further comprising the step of mounting a semiconductor element on the wiring layer. further comprising the step of sealing the semiconductor element with a sealing material to form a sealing layer.
A method for manufacturing a laminate according to claim 8. A step of manufacturing a laminate by the method for manufacturing a laminate according to claim 9;
separating the support base from the laminate by irradiating the separation layer with light through the support base to change the quality of the separation layer;
Methods for manufacturing electronic components, including: The method for manufacturing an electronic component according to claim 10, wherein the light has a wavelength of 400 nm or less.

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