JP7168828B2 - Semiconductor equipment and semiconductor systems - Google Patents

Description

The present invention relates to a semiconductor device and a semiconductor system on which semiconductor elements are mounted. In particular, the present invention relates to a semiconductor device and a semiconductor system capable of suppressing the occurrence of overvoltage while suppressing the influence of heat on gate drivers.

2. Description of the Related Art A so-called part-embedded module technology is known, which three-dimensionally mounts a semiconductor device with high density by stacking circuit boards on which semiconductor elements are mounted. Especially when modularizing semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) with switching functions. However, semiconductor elements and their electrical circuit components generate a relatively large amount of heat. Therefore, when a gate driver for controlling the switching operation of the semiconductor element is built in the substrate together with the semiconductor element, it is necessary to devise a method to prevent heat generation from affecting the gate driver. For example, Patent Document 1 discloses a semiconductor device in which a switching module 300 made of IGBTs or MOSFETs and a gate driver 320 that drives and controls the switching module 300 are connected by a gate wiring bar 108 . By connecting the switching module 300 and the gate driver 320 with the gate wiring bar 108 , it is intended to prevent the gate driver 320 from being affected by the heat generated from the switching module 300 .

Further, Patent Document 2 discloses a first conductive layer 11 electrically connected to a power element 11a thermally coupled to a heat dissipation member 20, and a control element (gate driver) for controlling the switching operation of the power element 11a. An electronic device having a second conductive layer 12 in which 12a and 12b are electrically connected and a resin layer 13 in which a power element 11a is embedded between the first conductive layer 11 and the second conductive layer 12 is disclosed. there is The first conductive layer 11 , the resin layer 13 and the second conductive layer 12 are laminated in this order from the side closer to the heat dissipation member 20 .

WO2019/044832 Japanese Patent No. 6308275

However, in the configuration of Patent Document 1, since the gate wiring bar 108 is used, the wiring length of the electric circuit becomes long, and the parasitic inductance component of the electric circuit increases, causing problems such as overvoltage. occur. In addition, in the configuration of Patent Document 2, since the power element 11a and the control elements 12a and 12b are arranged close to each other, the length of the wiring electrically connecting them is short, but the influence of the heat generated by the power element 11a is reduced. There is a problem that it extends to the control elements 12a and 12b.
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor device capable of suppressing the risk of overvoltage generation while suppressing the influence of heat on a gate driver.

The present inventors have found that the semiconductor device described below can solve the conventional problems described above.
A semiconductor device according to an embodiment of the present invention is a semiconductor device having at least a semiconductor element that is a switching element and a gate driver for the semiconductor element, wherein the semiconductor element and the gate driver are arranged inside a common housing, The semiconductor device is characterized in that a heat shield is provided for shielding heat transfer from the semiconductor element to the gate driver.

According to the embodiment of the present invention configured as described above, by providing the heat shield portion for shielding the heat transfer from the semiconductor element to the gate driver, the influence of heat on the gate driver can be mitigated. It becomes possible. Also, by providing the heat shield, the semiconductor element and the gate driver can be arranged close to each other. Therefore, it is possible to dispose the semiconductor element and the gate driver inside a common housing. This eliminates the need to increase the length of the electric circuit more than necessary, thereby avoiding the occurrence of overvoltage due to an increase in inductance.

1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention; FIG. 1 is an enlarged cross-sectional view of a main part in a first embodiment of the invention; FIG. 1 is a partial circuit diagram of a semiconductor device according to a first embodiment of the invention; FIG. FIG. 10 is an enlarged cross-sectional view of a main part of a semiconductor device according to a second embodiment of the invention; FIG. 11 is an enlarged cross-sectional view of a main part of a semiconductor device according to a third embodiment of the invention; FIG. 11 is an enlarged cross-sectional view of a main part of a semiconductor device according to a fourth embodiment of the invention; 1 is a block configuration diagram showing an example of a control system employing a semiconductor device according to an embodiment; FIG. 1 is a circuit diagram showing an example of a control system employing a semiconductor device according to an embodiment of the invention; FIG. FIG. 3 is a block configuration diagram showing another example of a control system employing the semiconductor device according to the embodiment of the invention; FIG. 10 is a circuit diagram showing another example of a control system employing the semiconductor device according to the embodiment of the invention;

Several embodiments of the present invention will be described below with reference to the drawings. In addition, the overlapping description is abbreviate|omitted by attaching|subjecting the same code|symbol to the same component.

FIG. 1 is a cross-sectional view showing a first embodiment of a semiconductor device according to the present invention. As shown in FIG. 1, semiconductor device 110 has first and second semiconductor elements 2 and 3 arranged on circuit board 1 . In this embodiment, the first semiconductor element 2 is an IGBT (Insulated Gate Bipolar Transistor), which is a power semiconductor element (switching element) having a switching function, or a MOSFET (Metal Oxide Semiconductor Field Transistor). Effect transistor: A switching element such as a Metal-Oxide-Semiconductor Field Effect Transistor. The second semiconductor element 3 may be a semiconductor component such as an SBD (Schottky Barrier Diode) or a diode such as a PiN diode. In embodiments of the present invention, the first and second semiconductor elements are not limited to the above elements. A gate driver 4 is further arranged on the circuit board 1 . The gate driver 4 is composed of an IC incorporating a driving circuit for controlling switching operation of the gate electrodes provided in the first semiconductor element 2 .

Between the first semiconductor element 2 and the gate driver 4, a spaced portion 5, which is a region not directly connected to the circuit board 1, is formed with a predetermined length. The spacing portion 5 is formed, for example, by partially punching or removing the flat circuit board 1 .

The upper surfaces of the first and second semiconductor elements 2 and 3 are connected to the upper wiring layer 8 via vias 7 . The lower surfaces of the first and second semiconductor elements 2 and 3 are connected to a lower wiring layer 10 through vias 9 and further connected to a lower wiring layer 12 through vias 11 . The upper wiring layer 8 and the lower wiring layer 12 are connected via through holes 13 .

Here, the vias 6, 7, 9, 11, the upper wiring layer 8, and the lower wiring layers 10, 12 mainly contain a material such as copper (Cu) having excellent electrical and thermal conductivity. 1, including the spacing portion 5, is filled with an electrically insulating material such as epoxy resin or prepreg. Specifically, after filling the interior of the semiconductor device 110 with an electrical insulating material, a plurality of holes are formed by laser processing or drilling, and the surfaces of these holes are plated with copper to form vias. and through holes are formed. By repeating this process, multiple stages of wiring layers and vias are sequentially formed. At the top of the semiconductor device 110, a housing wall 14 containing a material having excellent thermal conductivity such as copper (Cu) as a main component is provided. is provided. In the embodiment of the present invention, the housing is defined by the housing wall 14 and the lower wiring layer 12, and the thickness of the housing is about 200 μm to 500 μm. In the embodiments of the present invention, the dimensions of the housing are not limited to those described above.

An electric circuit connecting the first semiconductor element 2 and the gate driver 4 is provided at the height of the housing wall 14 spaced apart above the circuit board 1 in the thickness direction through vias 6a and 6b. It extends up to the resistor connection portion 15 . A space portion (heat shielding portion) 18 is provided in a portion of the electrical insulating material filled in the spacing portion 5 below the resistance connection portion 15 .

As shown in the partial enlarged view of FIG. 2, the space 18 has a substantially rectangular cross section. The space 18 extends in a direction perpendicular to the plane of the drawing so as to have a predetermined depth, and is filled with a gas such as air (dry air). In the embodiment of the present invention, it is preferable that the space portion (heat shielding portion) 18 is a gas having a thermal conductivity of 0.1 W/m·K or less. It is particularly preferable that the length of the space 18 in the depth direction extends over the entire length of the opposed surfaces of the first semiconductor element 2 and the gate driver 4 . Moreover, it is particularly preferable that the vertical length of the space portion 18 extends over the entire length of the facing surface (thickness) between the first semiconductor element 2 and the gate driver 4 .

The space 18 may be either an open space or a closed space, and in the case of an open space, it may have a conduit leading to the outside of the housing. The space 18 can be manufactured by a known process such as an etching process, a laser opening process, a drill opening process, etc. in the semiconductor manufacturing process.

The resistance connecting portion 15 is provided in a state in which a gate resistance 16, which is an electronic component having an arbitrary resistance value, can be connected. That is, a resistance connection portion 15 is provided in a part of the electric circuit connecting the first semiconductor element 2 and the gate driver 4, and the resistance connection portion 15 is exposed from the housing. In addition, as a result, it is possible to obtain a configuration in which at least part of the wiring that electrically connects the first semiconductor element 2 and the gate driver 4 is arranged outside the housing. With such a configuration, a heat shield can be easily provided between the gate driver 4 and the first semiconductor element 2 . By placing and fixing the gate resistor 16 on the resistor connection portion 15, the electrical contacts are connected by the terminals 16a and 16b of the gate resistor 16, and the gate resistor 16 is configured to electrically connect a part of the electric circuit. there is The terminals 16a and 16b of the gate resistor 16 and the resistor connection portion 15 can be connected using a known connection method such as soldering. It is also possible to remove the once-connected gate resistor from the resistor connection portion 15 by melting the solder, and then newly connect a gate resistor with a different resistance value.

FIG. 3 shows the circuit configuration of the semiconductor device 110 according to this embodiment. FIG. 3 extracts the components shown in FIG. 2, that is, the first semiconductor element 2, the second semiconductor element 3, the gate driver 4, and the gate resistor 16. Here, a MOSFET is exemplified as the semiconductor element 2, and switching control of the MOSFET 2 is performed by supplying a control signal from the gate driver 4 to the gate electrode G of the MOSFET. The second semiconductor element 3 is an SBD, and functions as a freewheeling diode (FWD) for returning the current of the source electrode S of the MOSFET to the drain electrode D. As the gate resistor (R1) 16 provided between the gate driver 4 and the MOSFET 2, one having an appropriate resistance value is selected in order to achieve a switching speed of the MOSFET 2 suitable for the controlled object (not shown). The resistor (R2) 17 is provided to set the voltage between the gate electrode G and the source electrode S to 0 V when the input signal to the gate electrode G is open.

Next, the operation of this embodiment configured as described above will be described in detail.

An embodiment of the present invention is characterized by providing a heat shield for shielding heat transfer from the semiconductor element to the gate driver. As a heat shield, for example, a space 18 is provided between the semiconductor element 2 and the gate driver 4, and the space 18 is filled with air as gas. The thermal conductivity of the thermosetting resin filled around the heat shield is very high, such as about 300 mW/m·K for epoxy resin and about 400 mW/m·K for prepreg. On the other hand, the thermal conductivity of air is about 25 mW/m K at room temperature under normal pressure, which is 1/10 or more lower than that of thermosetting resin, so the heat shielding effect is far superior. high. Therefore, the heat generated from the MOSFET 2 is transmitted through the circuit board 1 via a copper path such as a via, or is transmitted through the thermosetting resin to the lower wiring layer 12 or the housing wall 14. , the heat is finally dissipated to the outside of the housing. Further, the space portion 18 having a low thermal conductivity functions as a heat shield structure, thereby suppressing heat dissipation from the MOSFET 2 toward the gate driver 4 . Therefore, the provision of the heat shield makes it difficult for the heat generated by the MOSFET 2 to be transmitted to the gate driver 4, thereby suppressing adverse effects on the gate driver.

Also, as can be seen from the circuit configuration of FIG. 3, a gate resistor 16 is provided between the MOSFET 2 and the gate driver 4 . In an actual circuit arrangement, gate resistors are usually arranged between the MOSFET 2 and the gate driver 4, that is, at the position of the space 18 in this embodiment. On the other hand, in this embodiment, by connecting the gate resistor 16 of the MOSFET 2 in a state of being exposed from the housing, it is possible to easily secure an area for providing a heat shield between the semiconductor element 2 and the gate driver 4. . At the same time, it is possible to suppress adverse effects on the gate driver 4 due to heat generation of the gate resistor 16 .

According to the first embodiment of the present invention having such a configuration, by providing a heat shield portion for shielding heat transfer from the semiconductor element to the gate driver, the influence of heat on the gate driver can be alleviated. becomes possible. Moreover, since the semiconductor element and the gate driver can be arranged close to each other by providing the heat shield portion, both can be arranged inside a common housing. This eliminates the need to increase the length of the electric circuit more than necessary, thereby avoiding the occurrence of overvoltage due to an increase in inductance.

Further, in the embodiments of the present invention, it is effective whether the semiconductor elements 2 and 3 are vertical devices, horizontal devices, or a combination of vertical devices and horizontal devices. That is, even if the heat generation is dominant on either the top surface or the bottom surface of the semiconductor elements 2 and 3, the presence of the heat shielding portion can mitigate the influence of the heat on the gate driver.

In addition, in each of the following embodiments, since substantially the same components as the semiconductor device 110 depicted in FIG. 1 are provided, only different parts will be described.

FIG. 4 is an enlarged cross-sectional view showing a main part of a semiconductor device according to a second embodiment of the invention. As shown in FIG. 4, the semiconductor device 120 according to the second embodiment has a space portion 19 formed vertically up to the height of the resistance connection portion 15 on which the gate resistance 16 is mounted. An upper end portion 19a of the space portion 19 is electrically connected to the outside of the housing. Before the gate resistor 16 is mounted on the resistor connection portion 15, the space portion 19 is formed by drilling or dicing from the outside of the housing so that the space portion 19 is formed from the upper end portion 19a toward the separation portion 5 filled with resin or prepreg. It is formed by processing toward the lower end portion 19b. Although not shown in FIG. 4, the space 19 is formed so as to extend in the direction perpendicular to the plane of the drawing, and the space 19 extends over at least the entire length of the facing surface between the semiconductor element 2 and the gate driver 4. there is

According to the second embodiment of the present invention having such a configuration, the temperature of the upper end portion 19a of the open space portion 19 is lower than the temperature of the closed lower end portion 19b. of convection occurs. The air at the lower end portion 19b, which has become hot due to the heat generated by the semiconductor element 2, is carried to the upper end portion 19a by convection and is easily discharged to the outside of the housing. It can take in cold air from the outside. Therefore, it becomes possible not only to shield the gate driver 4 from heat, but also to cool the vicinity of the spaced portion 5, so that the stable operation of the gate driver 4 can be maintained.

FIG. 5 is an enlarged cross-sectional view showing essential parts of a semiconductor device according to a third embodiment of the present invention. As shown in FIG. 5, the semiconductor device 130 according to the third embodiment has a space portion 20 provided by enlarging the spacing portion 5 in the lateral direction. That is, the ratio of the space 20 to the distance between the semiconductor element 2 and the gate driver 4 is increased. As a result, the influence of the heat generated by the semiconductor element 2 can be made more difficult to be transmitted to the gate driver 4 .

FIG. 6 is an enlarged cross-sectional view showing essential parts of a semiconductor device according to a fourth embodiment of the present invention. As shown in FIG. 6, a semiconductor device 140 according to the fourth embodiment has a space portion 20 provided by expanding the spacing portion 5 in the lateral direction. That is, the side surfaces of the semiconductor element 2 and the gate driver 4 are exposed in the space 20, and the lateral direction of the space 5 is enlarged to a size that is substantially occupied only by the air layer. As a result, the influence of the heat generated by the semiconductor element 2 can be made more difficult to be transmitted to the gate driver 4 .

A semiconductor device according to an embodiment of the present invention includes a semiconductor element using silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), etc., which are widely known as semiconductor materials for power semiconductors. Useful. In particular, it is extremely useful when including a semiconductor element using gallium oxide (α-GaO) with a corundum structure having a high bandgap or gallium oxide (β-GaO) with a β-gallia structure, increasing the density of the semiconductor device. It also contributes to reliability improvement.

Of course, it is possible to combine multiple embodiments according to the present invention described above, or to apply some of the constituent elements to other embodiments, and such things also belong to the embodiments of the present invention. For example, the extension length and shape of the space can be designed to be any structure according to the internal structure of the housing, the amount of heat generated by the semiconductor element, and the like. In addition, the space may be filled with other gases or fluids (including liquids) with low thermal conductivity instead of being filled with air. The thermal conductivity is preferably 0.1 W / m · K or less, and in addition to the air (dry air) described above, argon (Ar) gas, nitrogen (N2) gas, oxygen (H2O), carbon dioxide (CO2 ) may be selected. These gases are widely used in the process of manufacturing semiconductors and are readily available.

In addition to the first semiconductor element 1 and the second semiconductor element, other semiconductor elements may be incorporated in the embodiment of the present invention. Also, other passive components (for example, capacitors, coils, resistors, etc.) may be further incorporated in the semiconductor device. In the embodiment of the present invention, the semiconductor device described above may be used as a submodule, and a plurality of these submodules may be combined to form a module for use.

The semiconductor device according to the embodiment of the present invention described above can be applied to power converters such as inverters and converters in order to exhibit the functions described above. FIG. 7 is a block configuration diagram showing an example of a control system using a semiconductor device according to an embodiment of the present invention, and FIG. 8 is a circuit diagram of the same control system, which is particularly suitable for mounting on an electric vehicle. control system.

As shown in FIG. 7, the control system 500 has a battery (power source) 501, a step-up converter 502, a step-down converter 503, an inverter 504, a motor (to be driven) 505, and a drive control section 506, which are mounted on an electric vehicle. It becomes The battery 501 is composed of a storage battery such as a nickel-metal hydride battery or a lithium-ion battery, and stores electric power by charging at a power supply station or regenerative energy during deceleration, and is necessary for the operation of the running system and electrical system of the electric vehicle. DC voltage can be output. The boost converter 502 is a voltage conversion device equipped with a chopper circuit, for example, and boosts the DC voltage of, for example, 200 V supplied from the battery 501 to, for example, 650 V by switching operation of the chopper circuit, and outputs it to a running system such as a motor. be able to. The step-down converter 503 is also a voltage conversion device equipped with a chopper circuit. It can be output to the electrical system including

Inverter 504 converts the DC voltage supplied from boost converter 502 into a three-phase AC voltage by switching operation, and outputs the three-phase AC voltage to motor 505 . The motor 505 is a three-phase AC motor that constitutes the running system of the electric vehicle, and is rotationally driven by the three-phase AC voltage output from the inverter 504. The rotational driving force is transmitted to the wheels of the electric vehicle via a transmission or the like (not shown). to

On the other hand, various sensors (not shown) are used to measure actual values such as the number of revolutions and torque of the wheels and the amount of depression of the accelerator pedal (acceleration amount) from the running electric vehicle. is entered. At the same time, the output voltage value of inverter 504 is also input to drive control section 506 . The drive control unit 506 has the function of a controller that includes an arithmetic unit such as a CPU (Central Processing Unit) and a data storage unit such as a memory. By outputting it as a feedback signal, the switching operation of the switching element is controlled. As a result, the AC voltage applied to the motor 505 by the inverter 504 is corrected instantaneously, so that the operation control of the electric vehicle can be accurately executed, and safe and comfortable operation of the electric vehicle is realized. It is also possible to control the output voltage to inverter 504 by giving the feedback signal from drive control section 506 to boost converter 502 .

FIG. 8 shows a circuit configuration excluding the step-down converter 503 in FIG. As shown in the figure, the semiconductor device according to the embodiment of the present invention is employed as a Schottky barrier diode in boost converter 502 and inverter 504 for switching control. Boost converter 502 is incorporated in a chopper circuit to perform chopper control, and inverter 504 is incorporated in a switching circuit including IGBTs to perform switching control. By interposing an inductor (such as a coil) in the output of the battery 501, the current is stabilized. It is stabilizing the voltage.

Further, as indicated by the dotted line in FIG. 8, the drive control unit 506 is provided with an operation unit 507 made up of a CPU (Central Processing Unit) and a storage unit 508 made up of a non-volatile memory. The signal input to the drive control unit 506 is supplied to the calculation unit 507, and programmed calculation is performed as necessary to generate a feedback signal for each semiconductor element. Further, the storage unit 508 temporarily holds the calculation result by the calculation unit 507, accumulates physical constants and functions required for drive control in the form of a table, and outputs them to the calculation unit 507 as appropriate. The calculation unit 507 and the storage unit 508 can employ known configurations, and their processing capabilities can be arbitrarily selected.

As shown in FIGS. 7 and 8, in the control system 500, the switching operations of the boost converter 502, the step-down converter 503, and the inverter 504 use diodes and switching elements such as thyristors, power transistors, IGBTs, MOSFETs, and the like. . By using gallium oxide (Ga ₂ O ₃ ), especially corundum-type gallium oxide (α-Ga ₂ O ₃ ), as the material for these semiconductor elements, the switching characteristics are greatly improved. Furthermore, by applying the semiconductor device according to the embodiment of the present invention, extremely good switching characteristics can be expected, and further miniaturization and cost reduction of the control system 500 can be realized. That is, each of the boost converter 502, the step-down converter 503, and the inverter 504 can expect the effect of the present invention. The effect of the present invention can be expected in any of the above.

Note that the above-described control system 500 can apply not only the semiconductor device according to the embodiment of the present invention to the control system of an electric vehicle, but also various devices such as stepping up and stepping down power from a DC power supply and converting power from DC to AC. It can be applied to the control system of the application. It is also possible to use a power source such as a solar cell as the battery.

FIG. 9 is a block configuration diagram showing another example of a control system employing a semiconductor device according to an embodiment of the present invention, and FIG. 10 is a circuit diagram of the same control system, showing infrastructure equipment that operates on power from an AC power supply. This control system is suitable for installation in home appliances, etc.

As shown in FIG. 9, the control system 600 receives power supplied from an external, for example, a three-phase AC power source (power source) 601, and includes an AC/DC converter 602, an inverter 604, a motor (to be driven) 605, It has a drive control unit 606, which can be mounted on various devices (described later). The three-phase AC power supply 601 is, for example, a power generation facility of an electric power company (a thermal power plant, a hydroelectric power plant, a geothermal power plant, a nuclear power plant, etc.), and its output is stepped down via a substation and supplied as an AC voltage. be. In addition, for example, in the form of a private power generator or the like, it is installed in a building or in a nearby facility and supplied by a power cable. AC/DC converter 602 is a voltage conversion device that converts AC voltage to DC voltage, and converts AC voltage of 100V or 200V supplied from three-phase AC power supply 601 to a predetermined DC voltage. Specifically, the voltage is converted into a generally used desired DC voltage such as 3.3V, 5V, or 12V. If the object to be driven is a motor, conversion to 12V is performed. A single-phase AC power supply can be used instead of the three-phase AC power supply. In that case, the same system configuration can be achieved by using a single-phase input AC/DC converter.

Inverter 604 converts the DC voltage supplied from AC/DC converter 602 into a three-phase AC voltage by switching operation, and outputs the three-phase AC voltage to motor 605 . The form of the motor 604 differs depending on the object to be controlled, but if the object to be controlled is a train, it drives the wheels; if it is factory equipment, it drives pumps and various power sources; It is a three-phase AC motor, and is rotationally driven by a three-phase AC voltage output from inverter 604, and transmits its rotational driving force to a drive target (not shown).

For example, in home appliances, there are many driven objects that can be directly supplied with the DC voltage output from the AC/DC converter 602 (for example, personal computers, LED lighting equipment, video equipment, audio equipment, etc.). The control system 600 does not require the inverter 604, and as shown in FIG. 9, the DC voltage is supplied from the AC/DC converter 602 to the driven object. In this case, for example, a personal computer is supplied with a DC voltage of 3.3V, and an LED lighting device is supplied with a DC voltage of 5V.

On the other hand, various sensors (not shown) are used to measure actual values such as the rotational speed and torque of the object to be driven, or the temperature and flow rate of the surrounding environment of the object to be driven. At the same time, the output voltage value of inverter 604 is also input to drive control section 606 . Based on these measurement signals, drive control section 606 gives a feedback signal to inverter 604 to control the switching operation of the switching element. As a result, the AC voltage applied to the motor 605 by the inverter 604 is corrected instantaneously, so that the operation control of the object to be driven can be accurately executed, and stable operation of the object to be driven is realized. Further, as described above, when the object to be driven can be driven with a DC voltage, it is possible to feedback-control AC/DC converter 602 instead of feedback to the inverter.

FIG. 10 shows the circuit configuration of FIG. As shown in the figure, the semiconductor device according to the embodiment of the present invention is employed as a Schottky barrier diode in an AC/DC converter 602 and an inverter 604 for switching control. The AC/DC converter 602 uses, for example, a Schottky barrier diode circuit configured in a bridge shape, and performs DC conversion by converting and rectifying the negative voltage component of the input voltage into a positive voltage. Also, the inverter 604 is incorporated in the switching circuit in the IGBT and performs switching control. A capacitor (such as an electrolytic capacitor) is interposed between the AC/DC converter 602 and the inverter 604 to stabilize the voltage.

Further, as indicated by the dotted line in FIG. 10, the drive control unit 606 is provided with an operation unit 607 made up of a CPU and a storage unit 608 made up of a non-volatile memory. The signal input to the drive control unit 606 is supplied to the calculation unit 607, and programmed calculation is performed as necessary to generate a feedback signal for each semiconductor element. Further, the storage unit 608 temporarily holds the result of calculation by the calculation unit 607, accumulates physical constants and functions required for drive control in the form of a table, and outputs them to the calculation unit 607 as appropriate. The calculation unit 607 and the storage unit 608 can employ known configurations, and their processing capabilities can be arbitrarily selected.

In such a control system 600, as in the control system 500 shown in FIGS. 7 and 8, the rectifying operation and switching operation of the AC/DC converter 602 and the inverter 604 are performed by diodes, switching elements such as thyristors and power transistors. , IGBT, MOSFET, etc. are used. Switching characteristics are improved by using gallium oxide (Ga ₂ O ₃ ), particularly corundum type gallium oxide (α-Ga ₂ O ₃ ), as the material for these semiconductor elements. Furthermore, by applying the semiconductor device according to the embodiment of the present invention, extremely good switching characteristics can be expected, and further miniaturization and cost reduction of the control system 600 can be realized. That is, AC/DC converter 602 and inverter 604 can each be expected to have the effect of the present invention. can be expected.

In FIGS. 9 and 10, the motor 605 is exemplified as an object to be driven, but the object to be driven is not necessarily limited to one that operates mechanically, and many devices that require AC voltage can be targeted. In the control system 600, as long as the drive object is driven by inputting power from an AC power supply, it can be applied to infrastructure equipment (for example, power equipment such as buildings and factories, communication equipment, traffic control equipment, water and sewage treatment). Equipment, system equipment, labor-saving equipment, trains, etc.) and home appliances (e.g., refrigerators, washing machines, personal computers, LED lighting equipment, video equipment, audio equipment, etc.). can.

1 circuit board
2, 3 Semiconductor device
4 gate driver
5 Separation part
6a, 6b, 7, 9, 11 Via
13 through hole
15 Resistor connection
16 gate resistor
18 Space part (heat shield part)
110, 120, 130, 140 Semiconductor equipment
500 control system
501 battery (power supply)
502 Boost Converter
503 Buck Converter
504 Inverter
505 motor (driven)
506 drive controller
507 Calculator
508 Memory
600 control system
601 Three-phase AC power supply (power supply)
602 AC/DC converter
604 Inverter
605 motor (driven)
606 drive controller
607 Calculator
608 memory

Claims (12)

A semiconductor device having at least a semiconductor element that is a switching element and a gate driver for the semiconductor element,
The semiconductor element and the gate driver are arranged in a common housing, and a heat shield is provided for shielding heat transfer from the semiconductor element to the gate driver. 1. A semiconductor device , wherein at least part of wiring electrically connecting to a driver is located outside the housing . 2. The semiconductor device according to claim 1, wherein said heat shield is a space provided in an electrically insulating material filled between said semiconductor element and said gate driver. 2. The semiconductor device according to claim 1, wherein said heat shield has a thermal conductivity of 0.1 W/m.K or less. 3. The semiconductor device according to claim 2, wherein said space is filled with gas. 5. The semiconductor device according to claim 4, wherein said space is filled with air. 3. The semiconductor device according to claim 2, wherein said space is electrically connected to the outside of said housing. A semiconductor device according to claim 1, further comprising a substrate on which said semiconductor element and said gate driver are mounted, wherein gate resistors electrically connected to said semiconductor element and said gate driver are arranged at positions spaced apart in the thickness direction of said substrate. Item 2. The semiconductor device according to item 1. 8. The semiconductor device according to claim 7 , wherein said gate resistor is arranged outside said housing. 3. A semiconductor device according to claim 2, wherein said electrical insulating material is a thermosetting resin. 3. A semiconductor device according to claim 2, wherein said electrically insulating material is prepreg. A power converter using the semiconductor device according to claim 1 . A control system using the semiconductor device according to claim 1 .

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