JP7161543B2 - 再使用型サブ構造に依拠したナノワイヤ半導体構造の計測モデル - Google Patents

再使用型サブ構造に依拠したナノワイヤ半導体構造の計測モデル Download PDF

Info

Publication number
JP7161543B2
JP7161543B2 JP2020549056A JP2020549056A JP7161543B2 JP 7161543 B2 JP7161543 B2 JP 7161543B2 JP 2020549056 A JP2020549056 A JP 2020549056A JP 2020549056 A JP2020549056 A JP 2020549056A JP 7161543 B2 JP7161543 B2 JP 7161543B2
Authority
JP
Japan
Prior art keywords
model
nanowire
metrology
reusable
based semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020549056A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021518656A (ja
JP2021518656A5 (enExample
Inventor
ホウサム シュエイブ
アレクサンダー クズネツォフ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2021518656A publication Critical patent/JP2021518656A/ja
Publication of JP2021518656A5 publication Critical patent/JP2021518656A5/ja
Application granted granted Critical
Publication of JP7161543B2 publication Critical patent/JP7161543B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/10—Geometric CAD
    • G06F30/17—Mechanical parametric or variational design
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/309—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of printed or hybrid circuits or circuit substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Pure & Applied Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • Evolutionary Computation (AREA)
  • Mathematical Analysis (AREA)
  • Computational Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2020549056A 2018-03-15 2019-03-14 再使用型サブ構造に依拠したナノワイヤ半導体構造の計測モデル Active JP7161543B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862643322P 2018-03-15 2018-03-15
US62/643,322 2018-03-15
US16/352,776 2019-03-13
US16/352,776 US11036898B2 (en) 2018-03-15 2019-03-13 Measurement models of nanowire semiconductor structures based on re-useable sub-structures
PCT/US2019/022370 WO2019178424A1 (en) 2018-03-15 2019-03-14 Measurement models of nanowire semiconductor structures based on re-usable sub-structures

Publications (3)

Publication Number Publication Date
JP2021518656A JP2021518656A (ja) 2021-08-02
JP2021518656A5 JP2021518656A5 (enExample) 2022-03-18
JP7161543B2 true JP7161543B2 (ja) 2022-10-26

Family

ID=67905716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020549056A Active JP7161543B2 (ja) 2018-03-15 2019-03-14 再使用型サブ構造に依拠したナノワイヤ半導体構造の計測モデル

Country Status (6)

Country Link
US (1) US11036898B2 (enExample)
JP (1) JP7161543B2 (enExample)
KR (1) KR102477026B1 (enExample)
CN (1) CN111837230B (enExample)
TW (1) TWI781300B (enExample)
WO (1) WO2019178424A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020126248A1 (en) * 2018-12-21 2020-06-25 Asml Netherlands B.V. Methods and apparatus for metrology
US11579099B2 (en) * 2019-10-14 2023-02-14 Industrial Technology Research Institute X-ray reflectometry apparatus and method thereof for measuring three dimensional nanostructures on flat substrate
US11867595B2 (en) 2019-10-14 2024-01-09 Industrial Technology Research Institute X-ray reflectometry apparatus and method thereof for measuring three dimensional nanostructures on flat substrate
US11644412B2 (en) * 2020-08-02 2023-05-09 Aizhong Zhang Thin film spectroellipsometric imaging
CN113175992B (zh) * 2021-04-25 2023-01-06 南京大学 一种纳米锥光谱分析器件及光谱分析方法
US12567165B2 (en) * 2022-02-02 2026-03-03 Fei Company Critical dimension measurement in 3D with geometric models
TWI814579B (zh) 2022-09-13 2023-09-01 財團法人工業技術研究院 用以量測平整基板上之三維奈米結構的x射線反射儀設備及方法
US12493004B2 (en) 2022-09-28 2025-12-09 Industrial Technology Research Institute Method for determining parameters of three dimensional nanostructure and apparatus applying the same
US12656393B2 (en) 2022-10-28 2026-06-16 Kla Corporation Methods and systems for measurement of semiconductor structures based on derivative measurement signals
US12587274B2 (en) 2023-03-28 2026-03-24 Quantum Generative Materials Llc Satellite optimization management system based on natural language input and artificial intelligence
US12379672B2 (en) 2023-05-11 2025-08-05 Kla Corporation Metrology of nanosheet surface roughness and profile
US12380367B2 (en) 2023-06-30 2025-08-05 Kla Corporation Metrology in the presence of CMOS under array (CuA) structures utilizing machine learning and physical modeling
US12510590B2 (en) 2023-06-30 2025-12-30 Kla Corporation Metrology in the presence of CMOS under array (CuA) structures utilizing an effective medium model with physical modeling
US12372882B2 (en) 2023-06-30 2025-07-29 Kla Corporation Metrology in the presence of CMOS under array (CUA) structures utilizing an effective medium model with classification of CUA structures
US12704789B2 (en) 2023-08-07 2026-08-11 Kla Corporation Flexible measurement models for model based measurements of semiconductor structures
US12368503B2 (en) 2023-12-27 2025-07-22 Quantum Generative Materials Llc Intent-based satellite transmit management based on preexisting historical location and machine learning
US12627372B2 (en) 2023-12-27 2026-05-12 Quantum Generative Materials Llc Advanced mission control predictive systems for low earth orbit semi-autonomous satellites
US12603701B2 (en) 2023-12-27 2026-04-14 Quantum Generative Materials Llc Distributed satellite constellation management and control system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160097983A1 (en) 2013-05-21 2016-04-07 Asml Netherlands B.V. Inspection Method and Apparatus, Substrates for use Therein and Device Manufacturing Method
JP2017507479A (ja) 2014-01-15 2017-03-16 ケーエルエー−テンカー コーポレイション 再利用可能な下位構造を含む半導体デバイスモデル

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US6734967B1 (en) 1995-01-19 2004-05-11 Kla-Tencor Technologies Corporation Focused beam spectroscopic ellipsometry method and system
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6917433B2 (en) 2000-09-20 2005-07-12 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to an etch process
US6895075B2 (en) 2003-02-12 2005-05-17 Jordan Valley Applied Radiation Ltd. X-ray reflectometry with small-angle scattering measurement
US7280230B2 (en) 2001-12-19 2007-10-09 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6816570B2 (en) 2002-03-07 2004-11-09 Kla-Tencor Corporation Multi-technique thin film analysis tool
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
US7430051B2 (en) 2005-10-12 2008-09-30 Sematech Inc. Methods for characterizing semiconductor material using optical metrology
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
US7596422B2 (en) 2007-01-12 2009-09-29 Tokyo Electron Limited Determining one or more profile parameters of a structure using optical metrology and a correlation between profile models and key profile shape variables
US7755764B2 (en) 2007-01-26 2010-07-13 Kla-Tencor Corporation Purge gas flow control for high-precision film measurements using ellipsometry and reflectometry
US7907264B1 (en) 2007-09-07 2011-03-15 Kla-Tencor Corporation Measurement of thin film porosity
US7929667B1 (en) 2008-10-02 2011-04-19 Kla-Tencor Corporation High brightness X-ray metrology
US9228943B2 (en) 2011-10-27 2016-01-05 Kla-Tencor Corporation Dynamically adjustable semiconductor metrology system
US20130110477A1 (en) * 2011-10-31 2013-05-02 Stilian Pandev Process variation-based model optimization for metrology
US8879073B2 (en) 2012-02-24 2014-11-04 Kla-Tencor Corporation Optical metrology using targets with field enhancement elements
US8749179B2 (en) 2012-08-14 2014-06-10 Kla-Tencor Corporation Optical characterization systems employing compact synchrotron radiation sources
US9581430B2 (en) 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US8860937B1 (en) 2012-10-24 2014-10-14 Kla-Tencor Corp. Metrology systems and methods for high aspect ratio and large lateral dimension structures
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
US10101670B2 (en) 2013-03-27 2018-10-16 Kla-Tencor Corporation Statistical model-based metrology
US9875946B2 (en) 2013-04-19 2018-01-23 Kla-Tencor Corporation On-device metrology
US9915522B1 (en) 2013-06-03 2018-03-13 Kla-Tencor Corporation Optimized spatial modeling for optical CD metrology
US9383661B2 (en) 2013-08-10 2016-07-05 Kla-Tencor Corporation Methods and apparatus for determining focus
US10935893B2 (en) 2013-08-11 2021-03-02 Kla-Tencor Corporation Differential methods and apparatus for metrology of semiconductor targets
US9778213B2 (en) 2013-08-19 2017-10-03 Kla-Tencor Corporation Metrology tool with combined XRF and SAXS capabilities
US9846132B2 (en) 2013-10-21 2017-12-19 Kla-Tencor Corporation Small-angle scattering X-ray metrology systems and methods
CN111948239B (zh) * 2015-04-28 2024-01-12 科磊股份有限公司 计算上高效的基于x射线的叠盖测量系统与方法
US10458912B2 (en) * 2016-08-31 2019-10-29 Kla-Tencor Corporation Model based optical measurements of semiconductor structures with anisotropic dielectric permittivity
US11333621B2 (en) 2017-07-11 2022-05-17 Kla-Tencor Corporation Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160097983A1 (en) 2013-05-21 2016-04-07 Asml Netherlands B.V. Inspection Method and Apparatus, Substrates for use Therein and Device Manufacturing Method
JP2017507479A (ja) 2014-01-15 2017-03-16 ケーエルエー−テンカー コーポレイション 再利用可能な下位構造を含む半導体デバイスモデル

Also Published As

Publication number Publication date
TW201946175A (zh) 2019-12-01
CN111837230B (zh) 2022-06-14
CN111837230A (zh) 2020-10-27
TWI781300B (zh) 2022-10-21
US11036898B2 (en) 2021-06-15
KR20200122404A (ko) 2020-10-27
JP2021518656A (ja) 2021-08-02
WO2019178424A1 (en) 2019-09-19
US20190286787A1 (en) 2019-09-19
KR102477026B1 (ko) 2022-12-12

Similar Documents

Publication Publication Date Title
KR102477026B1 (ko) 재사용 가능한 서브구조물에 기초한 나노와이어 반도체 구조물의 측정 모델
JP7535115B2 (ja) 軟ｘ線スキャタロメトリに依拠するオーバレイ計測方法及びシステム
US11536674B2 (en) Systems and methods for combined reflectometry and photoelectron spectroscopy
US11333621B2 (en) Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction
CN111819675B (zh) 用于实时测量控制的方法及系统
US10859518B2 (en) X-ray zoom lens for small angle x-ray scatterometry
US20230169255A1 (en) Methods And Systems For Data Driven Parameterization And Measurement Of Semiconductor Structures
KR102721344B1 (ko) 컴팩트하고 작은 스팟 사이즈의 연질 x 선 산란 측정법을 위한 방법 및 시스템
US20250053096A1 (en) Flexible Measurement Models For Model Based Measurements Of Semiconductor Structures

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220310

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220310

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20220310

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220614

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220907

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221011

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221014

R150 Certificate of patent or registration of utility model

Ref document number: 7161543

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250