TWI781300B - 基於可重複使用子結構之奈米線半導體結構之測量模型 - Google Patents

基於可重複使用子結構之奈米線半導體結構之測量模型 Download PDF

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TWI781300B
TWI781300B TW108108973A TW108108973A TWI781300B TW I781300 B TWI781300 B TW I781300B TW 108108973 A TW108108973 A TW 108108973A TW 108108973 A TW108108973 A TW 108108973A TW I781300 B TWI781300 B TW I781300B
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model
nanowire
measurement
reusable
based semiconductor
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TW108108973A
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Chinese (zh)
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TW201946175A (zh
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浩山姆 舟艾柏
亞歷山大 庫茲尼斯夫
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美商克萊譚克公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/10—Geometric CAD
    • G06F30/17—Mechanical parametric or variational design
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/309—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of printed or hybrid circuits or circuit substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Pure & Applied Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • Evolutionary Computation (AREA)
  • Mathematical Analysis (AREA)
  • Computational Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Sampling And Sample Adjustment (AREA)
TW108108973A 2018-03-15 2019-03-15 基於可重複使用子結構之奈米線半導體結構之測量模型 TWI781300B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862643322P 2018-03-15 2018-03-15
US62/643,322 2018-03-15
US16/352,776 2019-03-13
US16/352,776 US11036898B2 (en) 2018-03-15 2019-03-13 Measurement models of nanowire semiconductor structures based on re-useable sub-structures

Publications (2)

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TW201946175A TW201946175A (zh) 2019-12-01
TWI781300B true TWI781300B (zh) 2022-10-21

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US (1) US11036898B2 (enExample)
JP (1) JP7161543B2 (enExample)
KR (1) KR102477026B1 (enExample)
CN (1) CN111837230B (enExample)
TW (1) TWI781300B (enExample)
WO (1) WO2019178424A1 (enExample)

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US12493004B2 (en) 2022-09-28 2025-12-09 Industrial Technology Research Institute Method for determining parameters of three dimensional nanostructure and apparatus applying the same
US12656393B2 (en) 2022-10-28 2026-06-16 Kla Corporation Methods and systems for measurement of semiconductor structures based on derivative measurement signals
US12587274B2 (en) 2023-03-28 2026-03-24 Quantum Generative Materials Llc Satellite optimization management system based on natural language input and artificial intelligence
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US12372882B2 (en) 2023-06-30 2025-07-29 Kla Corporation Metrology in the presence of CMOS under array (CUA) structures utilizing an effective medium model with classification of CUA structures
US12704789B2 (en) 2023-08-07 2026-08-11 Kla Corporation Flexible measurement models for model based measurements of semiconductor structures
US12368503B2 (en) 2023-12-27 2025-07-22 Quantum Generative Materials Llc Intent-based satellite transmit management based on preexisting historical location and machine learning
US12627372B2 (en) 2023-12-27 2026-05-12 Quantum Generative Materials Llc Advanced mission control predictive systems for low earth orbit semi-autonomous satellites
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TW201946175A (zh) 2019-12-01
CN111837230B (zh) 2022-06-14
CN111837230A (zh) 2020-10-27
US11036898B2 (en) 2021-06-15
KR20200122404A (ko) 2020-10-27
JP2021518656A (ja) 2021-08-02
WO2019178424A1 (en) 2019-09-19
JP7161543B2 (ja) 2022-10-26
US20190286787A1 (en) 2019-09-19
KR102477026B1 (ko) 2022-12-12

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