JP7137593B2 - Photoelectric device and display panel using the same - Google Patents

Description

The present invention relates to optoelectronic devices and display panels utilizing optoelectronic devices.

A conventional liquid crystal display panel has, for example, a structure as disclosed in Patent Document 1 or a structure as shown in FIG. Referring to FIG. 5, a conventional display panel 100 includes a glass substrate 30, a color filter structure 102, a liquid crystal 40, an array substrate 52, a glass substrate 54 and a backlight module 60. As shown in FIG. The light emitted from the backlight module 60 passes through the liquid crystal 40 in which the liquid crystal molecular alignment is electrically controlled, and is given a hue in the color filter structure 102 before being emitted. That is, light passing through the red color resist (R) is emitted as red light RL, light passing through the green color resist (G) is emitted as green light GL, and passes through the blue color resist (B). The light is emitted as blue light BL.

Utility Model Registration No. 3109890

Here, the color filter structure 102 of the conventional display panel 100 as described above creates various colors using three primary colors of RGB, and mixes two adjacent colors of light by black matrix (BM) shading. However, there is no other effective application and there is room for improvement.
The present invention has been made in view of the above problems, and an object of the present invention is to increase the utility value of the color filter structure of the display panel.

(Mode of Invention)
The following aspects of the invention exemplify configurations of the present invention, and will be described separately in order to facilitate understanding of the various configurations of the present invention. Each term does not limit the technical scope of the present invention, and while considering the best mode for carrying out the invention, replaces, deletes, or further The technical scope of the present invention can also include the addition of the constituent elements.

(1) At least one photoelectric device having a PIN structure in which a P-type doped layer and an N-type doped layer are separated by an undoped layer, wherein the bandgap is adjusted to provide light transmission characteristics in a predetermined range of wavelengths. A photoelectric element that is used as an RGB light transmission pattern and/or a black matrix in a color filter structure of a display panel by forming the undoped layer with a semiconductor of

The photoelectric device according to this section has a PIN structure in which a P-type doped layer and an N-type doped layer are separated by an undoped layer, and the undoped layer is formed of at least one kind of semiconductor. At least one type of semiconductor forming the undoped layer has a bandgap adjusted so as to impart optical transmission characteristics for wavelengths within a predetermined range. Therefore, three types of semiconductors, a semiconductor adjusted to transmit red light, a semiconductor adjusted to transmit green light, and a semiconductor adjusted to transmit blue light, respectively Three types of photoelectric elements having undoped layers form a light transmission pattern of the three primary colors, RGB.

Further, for example, a black matrix is realized by a photoelectric element in which an undoped layer is formed so as to block light of any wavelength of RGB by combining a plurality of semiconductors whose band gaps are adjusted. Therefore, these photoelectric elements can be used as RGB light transmission patterns and black matrices instead of color resists in the color filter structure of display panels. As a result, in such a color filter structure, not only color arrangement but also various functions using photoelectric elements are realized, so that the utility value of the color filter structure is improved.

(2) A display panel in which light emitted from a light source is colored by a color filter structure and emitted from a display screen, wherein the color filter structure replaces at least a part of the color resist with a P-type doped layer. and a plurality of photoelectric elements having a PIN structure with N-type doped layers separated by undoped layers, the plurality of photoelectric elements comprising a first photoelectric element for realizing a red light transmission pattern and a green light transmission pattern. at least one of a second photoelectric element realizing a pattern and a third photoelectric element realizing a blue light transmission pattern, wherein the first to third photoelectric elements have a bandgap a display panel in which each of said undoped layers is formed of three kinds of semiconductors different in each other.

In the display panel described in this section, light emitted from a light source is colored through a color filter structure and emitted from a display screen. is provided with a photoelectric element. These plurality of photoelectric elements have a PIN structure in which a P-type doped layer and an N-type doped layer are separated by an undoped layer, and include at least one of first to third photoelectric elements. I'm in. In these first to third photoelectric elements, undoped layers are formed with three kinds of semiconductors having different band gaps so as to realize respective light transmission patterns of RGB.

That is, for example, the first photoelectric element has an undoped layer formed of a semiconductor adjusted to transmit red light, and the second photoelectric element has an undoped layer formed of a semiconductor adjusted to transmit green light. A third photoelectric element is formed with an undoped layer formed by a semiconductor tuned to transmit blue light. As a result, the display panel described in this section realizes the function of a color filter by adjusting the bandgap of the semiconductor forming the undoped layers of the plurality of photoelectric elements. Furthermore, in addition to the color arrangement function for the light emitted from the light source, various functions using a plurality of photoelectric elements are realized by the color filter structure, so the utility value of the color filter structure is improved. become a thing.

(3) The display panel according to item (2) above, wherein the light source is a backlight module.
In the display panel described in this section, since the light source is a backlight module, an appropriate amount of light can be easily obtained as a display device.

(4) In items (2) and (3) above, the plurality of photoelectric elements includes a fourth photoelectric element in which the three kinds of semiconductors are stacked to form the undoped layer, and the fourth photoelectric element A display panel in which a black matrix is realized by
In the display panel described in this section, the plurality of photoelectric elements used for the color filter structure includes the first to third photoelectric elements as well as the fourth photoelectric element. In this fourth photoelectric element, an undoped layer is formed by stacking three kinds of semiconductors forming the undoped layers of the first to third photoelectric elements.

That is, a semiconductor whose bandgap is adjusted to transmit red light, a semiconductor whose bandgap is adjusted to transmit green light, and a semiconductor whose bandgap is adjusted to transmit blue light. are superimposed. In other words, a semiconductor that absorbs light of wavelengths other than red light, a semiconductor that absorbs light of wavelengths other than green light, and a semiconductor that absorbs light of wavelengths other than blue light are layered. As a result, the fourth photoelectric element realizes a black matrix that blocks light of any wavelength of RGB. By comparison, the cost is suppressed.

(5) In items (2) to (4) above, the color filter structure includes a pair of transparent electrode layers arranged to sandwich the plurality of photoelectric elements, and is configured to be operable in a power generation mode. , in the power generation mode, each of the light transmitting photoelectric elements included in the plurality of photoelectric elements among the first to third photoelectric elements receives the light source and/or reaches through each of the electrode layers. Alternatively, the display panel absorbs incident light from the surroundings according to the light absorption characteristics of the semiconductor forming the undoped layer, and the pair of electrode layers extracts current from the photoelectric element for light transmission.

In the display panel described in this section, the color filter structure includes a pair of transparent electrode layers, and a plurality of photoelectric elements are disposed between the pair of electrode layers, thereby replacing the color resist with a plurality of photoelectric elements. The portion provided with has a structure in which one electrode layer, a P-type/N-type doped layer, an undoped layer, an N-type/P-type doped layer, and the other electrode layer are laminated in this order. Further, the color filter structure is configured to be operable in a power generation mode, and in this power generation mode, each of the light transmitting photoelectric elements included in the plurality of photoelectric elements among the first to third photoelectric elements is It absorbs incident light from light sources and/or the environment. That is, each of the light transmitting photoelectric elements receives incident light from the light source that has passed through one of the transparent electrode layers depending on the position of the light source, and incident light from the surroundings that has passed through the transparent electrode layer on the display screen side. Light, in other words, at least one of incident light from the surrounding environment in which the display panel is arranged that enters through the display screen is absorbed by the semiconductor forming the undoped layer. Here, the photoelectric element for light transmission indicates the first to third photoelectric elements included in the plurality of photoelectric elements. For example, the plurality of photoelectric elements includes only the first photoelectric element. If so, it indicates the first photoelectric element. When the plurality of photoelectric elements includes a first photoelectric element and a third photoelectric element, the first and third photoelectric elements are shown, and the first to third photoelectric elements are indicated. , all of the first to third photoelectric elements are shown.

More specifically, for example, the first photoelectric element has an undoped layer formed of a semiconductor whose bandgap is adjusted to transmit red light. Absorbs wavelengths of light. For this reason, the photoelectric element for light transmission absorbs light of a wavelength corresponding to the light absorption characteristics of the semiconductor forming each undoped layer, generates electron-hole pairs in each undoped layer, and generates a built-in electric field. give rise to In the power generation mode, the pair of electrode layers extract current from the photovoltaic force generated by the separation of electron-hole pairs through the P-type doped layer and the N-type doped layer in the photoelectric element for light transmission. It is formed. As a result, the color filter structure of the display panel described in this section uses the light from the light source and/or the light from the surrounding environment to function like a solar cell to generate power, and its utility value is further enhanced. It will be improved.

(6) In items (2) to (4) above, the color filter structure includes a pair of transparent electrode layers arranged in such a manner as to sandwich the plurality of photoelectric elements, and one of the pair of electrode layers. and a plurality of TFT elements connected to the light-transmitting photoelectric elements included in the plurality of photoelectric elements among the first to third photoelectric elements via the TFT elements, and are configured to be operable in a sensing mode. wherein, in the sensing mode, the color filter structure arranges colors such that the light emitted from the light source is emitted from the display screen as red light; and the plurality of TFT elements are photoelectric elements for transmitting light. and each of said light transmitting photoelectric elements emits light from said display screen and reflects light reflected by an object in contact with or close to said display screen to the semiconductor forming said undoped layer. The pair of electrode layers extracts current from the photoelectric element for light transmission, generates an electrical signal corresponding to the intensity of the current for each current extracted, and the electrical signal is a display panel used for extracting unevenness information of an object in contact with or in close proximity to the display screen . Further, when the electric signal is used for extracting unevenness information of an object in contact with or in close proximity to the display screen, the display panel includes position information of the photoelectric element for light transmission from which the light is extracted.

In the display panel described in this section, the color filter structure includes a pair of transparent electrode layers and a plurality of TFT elements. The pair of transparent electrode layers are arranged so as to sandwich the plurality of photoelectric elements, so that the portion where the plurality of photoelectric elements are provided instead of the color resist is one of the electrode layers, the P-type/N-type doped layer. , an undoped layer, an N-type/P-type doped layer, and the other electrode layer are stacked in this order. The plurality of TFT elements are connected to the light-transmitting photoelectric elements included in the plurality of photoelectric elements among the first to third photoelectric elements through one of the pair of electrode layers. That is, a layer in which a plurality of TFT elements are arranged is formed on the upper side or the lower side of the laminated structure described above. The photoelectric element for light transmission here is the same as the photoelectric element for light transmission described in the above item (5).

Also, the color filter structure is configured to be operable in a sensing mode, and in this sensing mode, the plurality of photoelectric elements are controlled so that the light emitted from the light source is emitted from the display screen as red light. color scheme. Further, in the sensing mode, the plurality of TFT elements provide a reverse bias to the light-transmitting photoelectric elements to which they are connected, and each of these light-transmitting photoelectric elements emits red light from the display screen for display. It absorbs reflected light reflected by objects in contact with or close to the screen. That is, the photoelectric element for light transmission absorbs light of a wavelength corresponding to the light absorption characteristics of the semiconductor forming each undoped layer, thereby generating electron-hole pairs in each undoped layer and generating a built-in electric field. give rise to Similarly, in the sensing mode, the pair of electrode layers extract current from the light-transmitting photoelectric element, and generate an electric signal corresponding to the strength of the current for each extracted current.

Here, the reflected light reflected by an object that is in contact with or close to the display screen is reflected at various levels of brightness and darkness due to the reflection characteristics and scattering characteristics that correspond to the unevenness of the surface of the object. Therefore, the intensity of the current extracted from each photoelectric element for light transmission varies depending on the brightness level of the absorbed reflected light. Therefore, the pair of electrode layers generates an electric signal having a magnitude corresponding to the strength of the current for each current extracted from the photoelectric element for light transmission. By adding the position information of the photoelectric element from which the light is taken out to each of these electric signals, planar signal information corresponding to the arrangement of the photoelectric element for light transmission can be obtained. As a result, since the unevenness information of an object that is in contact with or close to the display screen can be obtained two-dimensionally, it functions like an optical sensor for detecting fingerprints, etc., and the utility value of the color filter structure is further improved. .

(7) In items (2) to (6) above, the first photoelectric element is amorphous with a bandgap adjusted to 1.7 to 1.95 eV so as to transmit light with a wavelength of 635 to 730 nm. A display panel in which the undoped layer is formed of silicon.
The display panel described in this section defines the semiconductor forming the undoped layer of the first photoelectric element that transmits red light. That is, the undoped layer of the first photoelectric element is made of amorphous silicon with a bandgap adjusted to 1.7 to 1.95 eV, and transmits light with a wavelength of 635 to 730 nm. As a result, the first photoelectric element that transmits red light can be easily realized.

(8) In items (2) to (7) above, the second photoelectric element is a phosphor having a bandgap adjusted to 1.8 to 2.26 eV so as to transmit light with a wavelength of 550 to 688 nm. A display panel in which the undoped layer is formed of gallium nitride.
The display panel described in this section defines the semiconductor forming the undoped layer of the second photoelectric element that transmits green light. That is, the undoped layer of the second photoelectric element is made of gallium phosphide with a bandgap adjusted to 1.8-2.26 eV, and transmits light with a wavelength of 550-688 nm. Thereby, a second photoelectric element that transmits green light can be easily realized.

(9) In items (2) to (8) above, the third photoelectric element is a nitriding element having a bandgap adjusted to 2.1 to 3.2 eV so as to transmit light with a wavelength of 388 to 590 nm. A display panel in which the undoped layer is formed of indium gallium.
The display panel described in this section defines the semiconductor forming the undoped layer of the third photoelectric element that transmits blue light. That is, the undoped layer of the third photoelectric element is made of indium gallium nitride whose bandgap is adjusted to 2.1 to 3.2 eV, and transmits light with a wavelength of 388 to 590 nm. As a result, the third photoelectric element that transmits blue light can be easily realized.

Since the present invention is configured as described above, it is possible to increase the utility value of the color filter structure of the display panel.

1 is a cross-sectional view schematically showing an example of the structure of a display panel according to an embodiment of the invention; FIG. FIG. 2 is an image sectional view showing an example of the structure of a black matrix in the color filter structure of FIG. 1; FIG. 2 is an image structural diagram of each photoelectric element when the display panel of FIG. 1 is used in a power generation mode or a sensing mode; 2 is an image structural diagram of a configuration including first to fourth photoelectric elements when the display panel of FIG. 1 is used in a power generation mode or a sensing mode; FIG. 1 is a cross-sectional view schematically showing the structure of a conventional display panel; FIG.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments for carrying out the present invention will be described based on the accompanying drawings. Here, detailed description of the same or corresponding parts as in the prior art is omitted, and the same or corresponding parts are indicated by the same reference numerals throughout the drawings.
FIG. 1 schematically shows the structure of a display panel 10 according to an embodiment of the invention. As shown, display panel 10 includes glass substrate 30 , color filter structure 14 , liquid crystal 40 , array substrate 52 , glass substrate 54 , and backlight module 60 as light source 60 . The light emitted from the backlight module 60 passing through the liquid crystal 40 whose liquid crystal molecular alignment is electrically controlled is colored by the color filter structure 14 and emitted from the display screen 12 .

The color filter structure 14 has a plurality of photoelectric elements 16 arranged vertically and horizontally in a planar shape (in the left-right direction in FIG. 1 and in the direction perpendicular to the plane of the paper) instead of the color resist that constitutes the conventional color filter structure 102 as shown in FIG. It is provided side by side in a planar shape defined in ). Each of the plurality of photoelectric elements 16 has a PIN structure in which a P-type doped layer 18 and an N-type doped layer 20 are separated by an undoped layer 22 . The P-type doped layer 18 and the N-type doped layer 20 may be located above or below the undoped layer 22 in FIG. Further, the plurality of photoelectric elements 16 are sandwiched between and connected to a pair of transparent electrode layers 26,28.

The plurality of photoelectric elements 16 includes first to fourth photoelectric elements 16A to 16D, and the undoped layers 22 of the first to fourth photoelectric elements 16A to 16D are formed of semiconductors different from each other. In this embodiment, the first photoelectric element 16A includes an undoped layer 22 made of a semiconductor whose bandgap is adjusted so as to transmit the red light RL (in other words, absorb light of wavelengths other than the red light RL). In each drawing, the undoped layer 22A of the first photoelectric element 16A is shown as "R". Therefore, of the light emitted from the backlight module 60, the light passing through the first photoelectric elements 16A is emitted from the display screen 12 as red light RL. For example, amorphous silicon (a-Si:H) is used for the undoped layer 22A of the first photoelectric element 16A, the bandgap thereof is adjusted to 1.7 to 1.95 eV, and the wavelength is 635 to 730 nm. Allow light to pass through.

On the other hand, in the second photoelectric element 16B, the undoped layer 22 is formed of a semiconductor whose bandgap is adjusted so as to transmit the green light GL (in other words, absorb light of wavelengths other than the green light GL). In each drawing, the undoped layer 22B of the second photoelectric element 16B is shown as "G". Therefore, of the light emitted from the backlight module 60, the light passing through the second photoelectric elements 16B is emitted from the display screen 12 as green light GL. Gallium phosphide (GaP), for example, is used for the undoped layer 22B of the second photoelectric element 16B, and its bandgap is adjusted to 1.8 to 2.26 eV to transmit light with a wavelength of 550 to 688 nm. Let

The third photoelectric element 16C has an undoped layer 22 formed of a semiconductor whose bandgap is adjusted so as to transmit blue light BL (in other words, absorb light of wavelengths other than blue light BL). In each drawing, the undoped layer 22C of the third photoelectric element 16C is shown as "B". Therefore, of the light emitted from the backlight module 60, the light passing through the third photoelectric element 16C is emitted from the display screen 12 as blue light BL. For example, indium gallium nitride (InGaN) is used for the undoped layer 22C of the third photoelectric element 16C, and its band gap is adjusted to 2.1 to 3.2 eV to transmit light with a wavelength of 388 to 590 nm. Let

On the other hand, in the fourth photoelectric element 16D, as shown in FIG. 2, three kinds of semiconductors used for the undoped layers 22A to 22C of the first to third photoelectric elements 16A to 16C are layered to form the undoped layer 22. In each drawing, the undoped layer 22D of the fourth photoelectric element 16D is illustrated as "BM" indicating a black matrix. Therefore, of the light emitted from the backlight module 60, the light reaching the fourth photoelectric element 16D is absorbed at all wavelengths according to the light absorption characteristics of each of the three types of semiconductors. 12 is absorbed without being emitted. A fourth photoelectric element 16D is interposed between the first to third photoelectric elements 16A-16C such that the first to third photoelectric elements 16A-16C are not arranged directly adjacent to each other. be. In FIG. 2, three types of semiconductors are stacked in the order of RGB (22A, 22B, 22C) from the top, but the order of stacking is arbitrary.

In FIG. 1, the first to third photoelectric elements 16A to 16C are illustrated one by one. These three photoelectric elements 16A to 16C are used as structural units in the horizontal direction and the direction orthogonal to the paper surface in FIG. , and the photoelectric elements 16A to 16C are arranged in a grid pattern when viewed from above. A pair of transparent electrode layers 26 and 28 sandwiching them is formed as a transparent conductive film (TCO) such as ITO, for example, and is formed to extract current from the plurality of photoelectric elements 16 . A glass substrate 30 is provided on the color filter structure 14, and the upper surface of the glass substrate 30 is shown as the display screen 12 in the example of FIG. However, a polarizing plate or the like may be provided on the upper side of the glass substrate 30 , and in this case, one surface of the polarizing plate or the like becomes the display screen 12 .

Here, the color filter structure 14 of the display panel 10 according to the embodiment of the present invention is configured to be operable in power generation mode or sensing mode. When configured to operate in a power generation mode, color filter structure 14 operates, for example, as shown in FIGS. First, taking the first photoelectric element 16A as an example, one photoelectric element 16 will be explained. As shown in the left diagram of FIG. Incident light IA that enters from the upper side of FIG. 3 and incident light IB that enters from the lower side of FIG. 3 are incident on each of the photoelectric elements 16 . Incident light IA entering from the upper side in FIG. , and enters the photoelectric element 16 . On the other hand, incident light IB coming from the bottom side of FIG.

Then, in the power generation mode, each of the plurality of photoelectric elements 16 absorbs incident light IA from the surrounding environment according to the light absorption characteristics of the semiconductor forming the undoped layer 22 . That is, in the example of FIG. 3, the first photoelectric element 16A has a wavelength band shorter than the wavelength of the semiconductor itself in the incident light IA according to the light absorption characteristics of the semiconductor forming the undoped layer 22A. absorb light. Then, electron-hole pairs are generated in the undoped layer 22A, and a built-in electric field is generated, so that the electron-hole pairs are separated up to the N-type doped layer 20/P-type doped layer 18, and the photovoltaic force generated thereby causes the transparent layer to become transparent. A current is drawn by the thin electrode layer 28 . The upper right diagram of FIG. 3 illustrates such an image.

Furthermore, each of the plurality of photoelectric elements 16 absorbs the incident light IB from the backlight module 60 according to the light absorption characteristics of the semiconductor forming the undoped layer 22 in the power generation mode. That is, in the example of FIG. 3, the first photoelectric element 16A has a wavelength band shorter than the wavelength of the semiconductor itself in the incident light IB according to the light absorption characteristics of the semiconductor forming the undoped layer 22A. absorb light. Then, electron-hole pairs are generated in the undoped layer 22A, and a built-in electric field is generated, so that the electron-hole pairs are separated up to the P-type doped layer 18/N-type doped layer 20, and the photovoltaic force generated by this causes a transparent layer. A current is drawn by the thin electrode layer 26 . The lower right diagram of FIG. 3 illustrates such an image.

FIG. 3 shows only the first photoelectric element 16A, but as shown in FIG. 4, the undoped layers 22B and 22C are also formed by the second and third photoelectric elements 16B and 16C. Light is absorbed in accordance with the light absorption characteristics of the semiconductor being formed. Then, the incident light IA from the ambient environment or the incident light IB from the backlight module 60 causes a photovoltaic force in each of the photoelectric elements 16B, 16C, from which current is extracted by the transparent electrode layers 26, 28. FIG. With such a configuration, the plurality of photoelectric elements 16 have a thick undoped layer 22 to increase the light absorption rate, and a thin P-type doped layer 18 and N-type doped layer 20 to reach the undoped layer 22. It is preferable to suppress the absorption of light up to . As a result, the conversion efficiency from light is improved and the amount of current extracted is increased.

Next, with reference to FIG. 4, the case where the color filter structure 14 operates in the sensing mode will be described. An operation image of the single photoelectric element 16 is as shown in FIG. As shown in FIG. 4, the color filter structure 14 includes a plurality of TFT elements 70, which are for light transmission through one electrode layer 28, as shown in FIG. 4(a). or connected to the first to third photoelectric elements 16A to 16C for light transmission through the other electrode layer 26 as shown in FIG. 4(b). It is connected to the elements 16A-16C. When connected through the electrode layer 28, they are arranged on the side of the array substrate 52, forming a so-called COA (Color filter on Array). In either case, each of the TFT elements 70 has a structure held by the substrate 72 such that the drain and source 74 are located on opposite sides of the channel layer 78 from the gate 76, and the drain and a source 74 to the first to third photoelectric elements 16A to 16C. The plurality of TFT elements 70 are formed to provide a reverse bias to the first to third photoelectric elements 16A-16C during the sensing mode. The substrate 72 of the TFT element 70 may be used as a heat insulating material or for other purposes.

Also referring to FIG. 1, in the sensing mode, the color filter structure 14 arranges colors such that the light emitted from the backlight module 60 is emitted from the display screen 12 as red light. At this time, if an object is in contact with or close to the display screen 12, the light from the surrounding environment is blocked by the object immediately below the object and does not enter the display screen 12, but is emitted from the display screen 12. Red light enters from the display screen 12 as reflected light reflected by the object. For example, when a human finger is in contact with the display screen 12, the fingerprint troughs cause total internal reflection, and the fingerprint ridges scatter in the blue/green light regions. reflected in Each of the first to third photoelectric elements 16A to 16C absorbs such reflected light incident from the display screen 12 according to the light absorption characteristics of the semiconductor forming the respective undoped layers 22A to 22C. .

Further, in the configuration shown in FIG. 4(a), one electrode layer 28, and in the configuration shown in FIG. 4(b), the other electrode layer 26 is provided with a reverse bias by the TFT element 70 in the sensing mode. Currents generated by the absorption of light as described above are extracted from the first to third photoelectric elements 16A to 16C, and electric signals corresponding to the intensity of the current are generated for each of the extracted currents. At this time, in each of the first to third photoelectric elements 16A to 16C, the increase in the depletion layer reduces the capacitance, thereby shortening the response time. Each of the generated electric signals is used together with the positional information of the photoelectric element 16 from which the electric current is extracted, and is used for extracting unevenness information of an object in contact with or in close proximity to the display screen 12 .

Here, the display panel 10 according to the embodiment of the present invention is not limited to the configuration shown in FIGS. 1 to 4, and may have another configuration. For example, display panel 10 may include components other than those shown in FIG. In addition, the color filter structure 14 may not be entirely replaced with the photoelectric element 16, and the same color resist as the conventional one may be partially used. That is, only a portion of the first to fourth photoelectric elements 16A to 16D may be used, and the color resist may be used for the rest. Further, the undoped layer 22D of the fourth photoelectric element 16D forming the black matrix of the color filter structure 14 is not limited to the structure in which three kinds of semiconductors are stacked as shown in FIG. , or may be composed of four or more semiconductors. Furthermore, the position of the color filter structure 14 is not limited to being between the glass substrate 30 and the liquid crystal 40, but may be positioned adjacent to the array substrate 52 or the glass substrate 54. FIG. Also, the light source 60 is not limited to a backlight module, and may be formed of, for example, a self-luminous material. good.

Now, according to the embodiment of the present invention having the above configuration, it is possible to obtain the following effects. That is, the display panel 10 according to the embodiment of the present invention, as shown in FIG. A color filter structure 14 is provided with a plurality of photoelectric elements 16 instead of at least part of the color resist. These plurality of photoelectric elements 16 have a PIN structure in which a P-type doped layer 18 and an N-type doped layer 20 are separated by an undoped layer 22. At least one of the first to third photoelectric elements 16A to 16C It contains one photoelectric element. These first to third photoelectric elements 16A to 16C have an undoped layer 22 formed of three kinds of semiconductors with different band gaps so as to realize respective light transmission patterns of RGB.

That is, for example, the first photoelectric element 16A has an undoped layer 22A formed of a semiconductor adjusted to transmit red light RL, and the second photoelectric element 16B has an undoped layer 22A adjusted to transmit green light GL. An undoped layer 22B is formed of a semiconductor, and the undoped layer 22C of the third photoelectric element 16C is formed of a semiconductor adjusted to transmit blue light BL. Thereby, the display panel 10 can realize the function of a color filter by adjusting the bandgap of the semiconductor forming the undoped layer 22 of the plurality of photoelectric elements 16 . Furthermore, in addition to the color arrangement function for the light emitted from the light source 60, various functions using the plurality of photoelectric elements 16 can be realized by the color filter structure 14, so the utility value of the color filter structure 14 is increased. can be improved.
Moreover, since the display panel 10 according to the embodiment of the present invention uses the backlight module as the light source 60, it is possible to easily obtain an appropriate amount of light as a display device.

Further, in the display panel 10 according to the embodiment of the present invention, the plurality of photoelectric elements 16 used in the color filter structure 14 include the first to third photoelectric elements 16A to 16C and the fourth photoelectric element 16D. It is included. As shown in FIG. 2, the fourth photoelectric element 16D is formed by stacking three kinds of semiconductors forming the undoped layers 22A to 22C of the first to third photoelectric elements 16A to 16C to form an undoped layer 22D. It is That is, a semiconductor that absorbs light of wavelengths other than red light RL, a semiconductor that absorbs light of wavelengths other than green light GL, and a semiconductor that absorbs light of wavelengths other than blue light BL are stacked. As a result, the fourth photoelectric element 16D can realize a black matrix that blocks light of any wavelength of RGB. Costs can be reduced compared to implementing a matrix.

Further, in the display panel 10 according to the embodiment of the present invention, as shown in FIG. 1, the color filter structure 14 includes a pair of transparent electrode layers 26, 28, between which a pair of electrode layers 26, 28 is formed. A plurality of photoelectric elements 16 are arranged. Therefore, the portion where the plurality of photoelectric elements 16 are provided instead of the color resist is one electrode layer 26, the P-type/N-type doped layers 18/20, the undoped layer 22, the N-type/P-type doped layers 20/20. 18 and the other electrode layer 28 are laminated in this order. Further, the color filter structure 14 is configured to be operable in a power generation mode, and in this power generation mode, the photoelectric elements for light transmission included in the plurality of photoelectric elements 16 among the first to third photoelectric elements 16A to 16C. Each of the elements 16 absorbs incident light IB, IA from the light source 60 and/or the surroundings, as shown in FIG. That is, each of the light transmitting photoelectric elements 16A to 16C receives the incident light IB from the backlight module 60 that has passed through the transparent electrode layer 28 on the backlight module 60 side as the light source 60 and Incident light IA from the surroundings that has passed through the transparent electrode layer 26 on the display screen 12 side located at , in other words, incident light IA from the surrounding environment where the display panel 10 is arranged that enters through the display screen 12 and At least one of the incident light is absorbed by the semiconductor forming the undoped layer 22 .

More specifically, in the first photoelectric element 16A, for example, the undoped layer 22A is formed of a semiconductor whose bandgap is adjusted so as to transmit the red light RL. It absorbs light of wavelengths other than red light RL, such as red light RL. Therefore, the photoelectric elements 16A to 16C for light transmission absorb light having a wavelength corresponding to the light absorption characteristics of the semiconductor forming each undoped layer 22, and generate electron-hole pairs in each undoped layer 22. to create a built-in electric field. In the power generation mode, the pair of electrode layers 26 and 28 act as photovoltaic electrodes generated by separation of electron-hole pairs via the P-type doped layer 18 and the N-type doped layer 20 in the light transmitting photoelectric elements 16A to 16C. It is configured to draw current from electrical power. As a result, the color filter structure 14 can use the light from the light source 60 and/or the light from the surrounding environment to function like a solar cell to generate electricity, thereby further improving its utility value. becomes.

In addition, the display panel 10 according to the embodiment of the present invention may be configured such that the color filter structure 14 is operable in sensing mode. In this case, the color filter structure 14 further includes a plurality of TFT elements 70, as shown in FIG. These plurality of TFT elements 70 are photoelectric elements for transmitting light included in the plurality of photoelectric elements 16 among the first to third photoelectric elements 16A to 16C via one of the pair of electrode layers 26 and 28. 16 is connected. Further, in the sensing mode, the color filter structure 14 controls the plurality of photoelectric elements 16 and the like so that the light emitted from the backlight module 60 as the light source 60 is emitted from the display screen 12 as red light. Arrange colors.

Further, in the sensing mode, the plurality of TFT elements 70 provide a reverse bias to the light-transmitting photoelectric elements 16A-16C to which they are connected, and each of these light-transmitting photoelectric elements 16A-16C is connected to the display screen 12. It emits as red light and absorbs reflected light reflected by objects in contact with or close to the display screen 12 . That is, the light transmission photoelectric elements 16A to 16C absorb light of wavelengths corresponding to the light absorption characteristics of the semiconductors forming the respective undoped layers 22A to 22C. Create hole pairs to create a built-in electric field. Similarly, in the sensing mode, the pair of electrode layers 26 and 28 extract current from the light-transmitting photoelectric elements 16A to 16C, and generate an electric signal corresponding to the intensity of each current extracted.

Here, the reflected light reflected by an object that is in contact with or close to the display screen 12 is reflected at various levels of brightness and darkness due to the reflection characteristics and scattering characteristics that correspond to the unevenness of the surface of the object. Therefore, the intensity of the current extracted from each of the photoelectric elements 16A to 16C for light transmission changes according to the brightness level of the absorbed reflected light. Therefore, the pair of electrode layers 26 and 28 generate an electric signal having a magnitude corresponding to the strength of the current for each current extracted from the photoelectric elements 16A to 16C for light transmission. By adding the positional information of the photoelectric element 16 from which light is taken out to each of these electric signals, it is possible to obtain two-dimensional signal information corresponding to the arrangement of the photoelectric elements 16A to 16C for light transmission. As a result, it is possible to obtain unevenness information of an object that is in contact with or close to the display screen 12 in a planar manner, so that it can function like an optical sensor for detecting fingerprints, etc., and the utility value of the color filter structure 14 is further improved. It is possible to

On the other hand, the photoelectric device 16 according to the embodiment of the present invention has a PIN structure in which a P-type doped layer 18 and an N-type doped layer 20 are separated by an undoped layer 22, as shown in FIG. Layer 22 is formed from at least one semiconductor. At least one kind of semiconductor forming the undoped layer 22 has a bandgap adjusted so as to impart light transmission characteristics for wavelengths within a predetermined range. For this reason, three types of semiconductors are used: a semiconductor adjusted to transmit red light RL, a semiconductor adjusted to transmit green light GL, and a semiconductor adjusted to transmit blue light BL. With the three types of photoelectric elements 16A to 16C each having the undoped layer 22 formed thereon, a light transmission pattern of the three primary colors, RGB, can be realized.

The undoped layers 22A-22C of the three types of photoelectric elements 16A-16C are made of the following semiconductors. That is, the undoped layer 22A of the first photoelectric element 16A is made of amorphous silicon with a bandgap adjusted to 1.7 to 1.95 eV, and transmits light with a wavelength of 635 to 730 nm. The undoped layer 22B of the second photoelectric element 16B is made of gallium phosphide with a bandgap adjusted to 1.8-2.26 eV, and transmits light with a wavelength of 550-688 nm. Further, the undoped layer 22C of the third photoelectric element 16C is made of indium gallium nitride with a bandgap adjusted to 2.1-3.2 eV, and transmits light with a wavelength of 388-590 nm. In this way, the first to third photoelectric elements 16A to 16C that transmit the respective RGB lights can be easily realized.

Further, for example, as shown in FIG. 2, a combination of a plurality of semiconductors whose band gaps are adjusted is used to form a fourth photoelectric element 16D in which an undoped layer 22 is formed so as to block light of any wavelength of RGB. A matrix can be implemented. Therefore, these photoelectric elements 16 can be used as an RGB light transmission pattern and a black matrix in place of the color resist in the color filter structure 14 of the display panel 10 . Accordingly, in such a color filter structure 14, not only color arrangement but also various functions using the photoelectric elements 16 can be realized, so that the utility value of the color filter structure 14 can be improved.

INDUSTRIAL APPLICABILITY Since the present invention uses a photoelectric element as a color arrangement element of a color filter structure, it can be used not only for display panels but also for photovoltaic power generation and optical sensors.

10: display panel, 12: display screen, 14: color filter structure, 16 (16A to 16D): photoelectric element, 18: P-type doped layer, 20: N-type doped layer, 22 (22A to 22D): undoped layer, 26, 28: transparent electrode layer, 60: light source (backlight module), 70: TFT element

Claims (7)

A display panel in which light emitted from a light source is arranged in colors by a color filter structure and emitted from a display screen,
The color filter structure is provided with a plurality of photoelectric elements having a PIN structure in which a P-type doped layer and an N-type doped layer are separated by an undoped layer instead of at least a part of the color resist,
The plurality of photoelectric elements comprises a first photoelectric element for realizing a red light transmission pattern, a second photoelectric element for realizing a green light transmission pattern, and a third photoelectric element for realizing a blue light transmission pattern. wherein each of the first to third photoelectric elements has an undoped layer formed of three semiconductors having different bandgaps ;
The color filter structure includes a pair of transparent electrode layers arranged in such a manner as to sandwich the plurality of photoelectric elements, and one of the first to third photoelectric elements via one of the pair of electrode layers. a plurality of TFT elements connected to the light-transmitting photoelectric elements included in the plurality of photoelectric elements, and configured to be operable in a sensing mode,
During the sensing mode,
the color filter structure is arranged so that the light emitted from the light source is emitted from the display screen as red light;
the plurality of TFT elements providing a reverse bias to the light transmitting photoelectric element;
Each of the light-transmitting photoelectric elements emits light from the display screen and reflects light reflected by an object in contact with or in the vicinity of the display screen, depending on the light absorption characteristics of the semiconductor forming the undoped layer. absorb,
The pair of electrode layers extracts current from the light-transmitting photoelectric element, generates an electrical signal corresponding to the intensity of the current for each current extracted, and the electrical signal contacts or approaches the display screen. A display panel characterized by being used for extracting unevenness information of an object . 2. When the electric signal is used for extracting unevenness information of an object in contact with or close to the display screen, position information of the light-transmitting photoelectric element from which the electric signal is extracted is added. Display panel as described. 3. The display panel as claimed in claim 1 , wherein the light source is a backlight module. The plurality of photoelectric elements include a fourth photoelectric element formed by stacking the three kinds of semiconductors to form the undoped layer, and the fourth photoelectric element realizes a black matrix. 4. The display panel according to any one of items 1 to 3 . The first photoelectric element is characterized in that the undoped layer is formed of amorphous silicon having a bandgap adjusted to 1.7 to 1.95 eV so as to transmit light having a wavelength of 635 to 730 nm. 5. The display panel according to any one of claims 1 to 4 . The second photoelectric device is characterized in that the undoped layer is formed of gallium phosphide with a bandgap adjusted to 1.8 to 2.26 eV so as to transmit light with a wavelength of 550 to 688 nm. 6. The display panel according to any one of claims 1 to 5 , wherein The third photoelectric device is characterized in that the undoped layer is formed of indium gallium nitride having a bandgap adjusted to 2.1 to 3.2 eV so as to transmit light having a wavelength of 388 to 590 nm. 7. The display panel according to any one of claims 1 to 6 , wherein

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