CN113690287A

CN113690287A - Display panel, preparation method thereof and display device

Info

Publication number: CN113690287A
Application number: CN202110976593.5A
Authority: CN
Inventors: 任怀森; 高涛; 王彦强; 郭远征; 夏维
Original assignee: BOE Technology Group Co Ltd; Chengdu BOE Optoelectronics Technology Co Ltd
Current assignee: BOE Technology Group Co Ltd; Chengdu BOE Optoelectronics Technology Co Ltd
Priority date: 2021-08-24
Filing date: 2021-08-24
Publication date: 2021-11-23

Abstract

The embodiment of the disclosure provides a display panel, a preparation method thereof and a display device, wherein the display panel comprises a display substrate and at least two light detection units on the display substrate, at least two light detection units for detecting the intensities of lights with different wavelength bands in ambient light exist in the at least two light detection units, and the lights with different wavelength bands have different colors. The function of the light detection unit can be enriched.

Description

Display panel, preparation method thereof and display device

Technical Field

The disclosure relates to the technical field of display, and in particular to a display panel, a manufacturing method thereof and a display device.

Background

Electronic devices such as mobile phones and computers generally have a display panel to realize a display function.

In the related art, a light detection unit is disposed in the display panel and is used for detecting the intensity of the ambient light of the environment where the display panel is located, so as to adapt to various application requirements, for example, adjusting the brightness of the display panel based on the detected intensity of the ambient light.

The light detection unit is used for detecting the intensity of the ambient light of the environment where the display panel is located, and the function is single.

Disclosure of Invention

The embodiment of the disclosure provides a display panel, a preparation method thereof and a display device, which can improve the function of a rich light detection unit.

In a first aspect, embodiments of the present disclosure provide a display panel including a display substrate and at least two light detection units on the display substrate, there being at least two of the at least two light detection units for detecting intensities of light in different wavelength bands in ambient light, the light in the different wavelength bands having different colors.

In one implementation of the disclosed embodiments, the at least two light detection units comprise at least two of the following light detection units: a first light detection unit, a second light detection unit, a third light detection unit, a fourth light detection unit, and a fifth light detection unit.

Wherein the first light detection unit is used for detecting the intensity of red light in the ambient light, the second light detection unit is used for detecting the intensity of green light in the ambient light, the third light detection unit is used for detecting the intensity of blue light in the ambient light, the fourth light detection unit is used for detecting the overall intensity of the ambient light, and the fifth light detection unit is used for detecting the intensity of noise light in the ambient light.

In one implementation of the disclosed embodiments, the light detection unit includes a light sensing device and a filtering structure on the display substrate, the light sensing device being located between the filtering structure and the display substrate.

In one implementation of the embodiment of the present disclosure, the photosensitive device is a first PIN device, and the first PIN device includes: the first P layer, the first I layer, the first N layer and the first grid electrode.

The first P layer, the first I layer and the first N layer are sequentially arranged on a bearing surface of the display substrate, the first I layer is connected between the first P layer and the first N layer, and the bearing surface is the surface of the display substrate where the first PIN device is located; the first grid electrode is arranged between the first I layer and the display substrate, and the orthographic projection of the first grid electrode on the bearing surface is at least partially overlapped with the orthographic projection of the first I layer on the bearing surface.

In an implementation manner of the embodiment of the present disclosure, the first PIN device further includes a second N layer, a second I layer, and a second gate, the second N layer and the second I layer are sequentially arranged in an arrangement direction of the first P layer, the first I layer, and the first N layer, and the second I layer is connected between the first P layer and the second N layer.

In one implementation of the embodiment of the present disclosure, the first P layer, the first I layer, the first N layer are the same as an active layer in a pixel of the display substrate; the display panel further comprises a color film layer on the display substrate, and the filtering structure and the color film layer are on the same layer.

In one implementation manner of the embodiment of the disclosure, the photosensitive device is a second PIN device, the second PIN device includes a P layer, an I layer and an N layer which are sequentially stacked on the display substrate, and the P layer is the same as an active layer in a pixel of the display substrate; the display panel further comprises a color film layer on the display substrate, and the filtering structure and the color film layer are on the same layer.

In one implementation of the disclosed embodiments, the display panel includes a display area and a peripheral area surrounding the display area, and the light detection unit is located in the peripheral area of the display panel.

In a second aspect, an embodiment of the present disclosure provides a method for manufacturing a display panel, including: providing a display substrate; at least two light detection units are formed on the display substrate, and at least two light detection units for detecting intensities of lights in different wavelength bands in the ambient light exist in the at least two light detection units, and the lights in the different wavelength bands have different colors.

In a third aspect, an embodiment of the present disclosure provides a display device, including any one of the display panels described above.

The beneficial technical effects brought by the technical scheme provided by the embodiment of the disclosure are as follows: this disclosure sets up two at least optical detection units on display panel's display substrate, can detect the intensity of the light of two at least different wavelength bands in the ambient light of display panel place environment, compares in the light detection unit in correlation technique and can only detect the bulk strength of ambient light, and the optical detection unit function in this disclosed embodiment is abundanter.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.

Fig. 1 is a schematic top view of a display panel according to an embodiment of the disclosure;

fig. 2 is a schematic partial structure diagram of a display panel provided in an embodiment of the present disclosure;

fig. 3 is a schematic diagram of a depletion region and a non-depletion region of a PIN device provided by an embodiment of the present disclosure;

fig. 4 is a schematic structural diagram of a display panel provided in an embodiment of the present disclosure;

fig. 5 is a schematic structural diagram of another display panel provided in the embodiment of the present disclosure;

FIG. 6 is a schematic structural diagram of another light detection unit provided by the embodiments of the present disclosure;

fig. 7 is a schematic diagram of a connection between a photosensor and a signal line according to an embodiment of the present disclosure;

fig. 8 is a schematic partial structure diagram of another display panel provided in the embodiment of the present disclosure;

fig. 9 is a schematic structural diagram of another display panel provided in the embodiment of the present disclosure;

fig. 10 is a schematic structural diagram of another display panel provided in the embodiment of the present disclosure;

fig. 11 is a schematic diagram of another connection of a photosensor to a signal line according to an embodiment of the present disclosure;

fig. 12 is a schematic diagram of a method for manufacturing a display panel according to an embodiment of the present disclosure;

fig. 13 is a schematic diagram of a method for manufacturing a display panel according to an embodiment of the present disclosure;

fig. 14 to 18 are diagrams illustrating a manufacturing process of a display panel according to an embodiment of the present disclosure;

fig. 19 is a schematic view of another method of manufacturing a display panel according to an embodiment of the present disclosure;

fig. 20 to 27 are diagrams illustrating a manufacturing process of another display panel according to an embodiment of the present disclosure;

fig. 28 is a schematic diagram of a control method of a display panel according to an embodiment of the present disclosure.

Detailed Description

To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

Fig. 1 is a schematic top view of a display panel provided in an embodiment of the present disclosure, and as shown in fig. 1, the display panel includes a display substrate 10 and at least two light detection units 20 on the display substrate 10. At least two light detection units for detecting intensities of light of different wavelength bands in the ambient light are present in the at least two light detection units 20, wherein the light of different wavelength bands has different colors.

The wavelengths of light are different, and the colors are different, for example, the wavelength of red light is about 625-740 nm, the wavelength of green light is about 492-577 nm, the wavelength of blue light is about 440-475 nm, and white light is a mixture of light of multiple colors. Ambient light is typically a mixture of light in a plurality of different wavelength bands. Besides visible light, invisible light, such as infrared light, and the like, is present in ambient light.

In embodiments of the present disclosure, two different wavelength bands means that at least parts of the two wavelength bands are different, e.g. the two wavelength bands do not coincide, or parts of the two wavelength bands coincide.

Illustratively, the at least two light detection units comprise at least a first light detection unit for detecting an intensity of light in the ambient light in a first wavelength band and a second light detection unit for detecting an intensity of light in the ambient light in a second wavelength band, the first and second wavelength bands being at least partially different such that the color of the light in the first wavelength band is different from the color of the light in the second wavelength band.

The display substrate of the display panel is provided with the at least two light detection units, so that the intensity of light with at least two different wavelength bands in the environment light of the environment where the display panel is located can be detected, and compared with the prior art that the light detection units can only detect the whole intensity of the environment light, the light detection units in the embodiment of the disclosure have richer functions.

In some examples, the display panel may adjust the intensities of the lights with different colors in the output light of the display panel based on the detected intensities of the lights with at least two different wavelength bands in the ambient light, so as to more accurately adjust the light emitting intensity and color of the display panel, thereby improving the display effect of the display panel. For example, when the light detection unit detects that light in the red wavelength band of the ambient light is strong, the intensity of red light in the light output from the display panel may be increased.

In other examples, other electronic devices in the electronic device to which the display panel belongs may be controlled based on the detected intensities of the lights in at least two different wavelength bands in the ambient light, for example, the color temperature of the light emitted by the fill-in light is controlled when the camera takes a picture.

As shown in fig. 1, the display substrate 10 includes a display area 101 and a peripheral area 102 surrounding the display area 101, wherein the display area 101 is used for displaying a picture, and the peripheral area 102 is used for arranging signal lines and the like.

In the embodiment of the present disclosure, the display area 101 includes a plurality of pixels 1011, and the plurality of pixels 1011 are distributed in an array. Each pixel 1011 includes a plurality of sub-pixels, each for emitting a different color of light.

In some examples, each pixel includes three subpixels for emitting red, blue, and green light, respectively. In other examples, each pixel includes four sub-pixels for emitting red, blue, green, and white light, respectively. The embodiment of the present disclosure does not limit the arrangement manner of each sub-pixel in the pixel.

Each sub-pixel comprises a pixel circuit and a light-emitting unit which are connected, and the pixel circuit is used for controlling the connected light-emitting unit to emit light.

Illustratively, the Light Emitting unit is an OLED (Organic Light-Emitting Diode), and the pixel circuit includes a switching TFT (Thin Film Transistor), a capacitor, and a driving TFT, wherein the switching TFT is configured to control the data line to charge the capacitor, and the driving TFT is configured to drive the OLED to emit Light under the action of a power signal after the capacitor is charged.

In some embodiments, the display substrate 10 is an LTPS (Low Temperature Poly-Silicon) substrate. For the LTPS substrate, the active layer materials of the driving TFT and the switching TFT in the pixel circuit of each sub-pixel are both low temperature polysilicon.

In other embodiments, the display substrate 10 is an LTPO (Low Temperature Polycrystalline Oxide) substrate. For the LTPO substrate, in the pixel circuit of each sub-pixel, the active layer material of the driving TFT is low-temperature polysilicon, and the active layer material of the switching TFT is an oxide semiconductor, such as IGZO (indium gallium zinc oxide).

Optionally, the display panel further includes a color film layer on the display substrate 10. The color film layer is positioned in the display area. The color film layer comprises a plurality of color resistance blocks arranged in an array and a black matrix positioned between every two adjacent color resistance blocks. Each color-resisting block corresponds to one sub-pixel and is positioned above the light-emitting unit of the corresponding sub-pixel.

Alternatively, the light detection unit 20 may be located in the peripheral region 102, i.e., at the edge of the display substrate 10. Illustratively, as shown in fig. 1, the display substrate 10 has a rectangular shape, and the light detection unit 20 may be located at the upper left corner or the upper right corner of the display substrate 10, which are not easily blocked and easily detect the ambient light.

In some examples, the at least two light detection units 20 comprise a first light detection unit 21, a second light detection unit 22 and a third light detection unit 23. The first light detecting unit 21 is used to detect the intensity of light in a wavelength band corresponding to red (i.e., red light), the second light detecting unit 22 is used to detect the intensity of light in a wavelength band corresponding to green (i.e., green light), and the third light detecting unit 23 is used to detect the intensity of light in a wavelength band corresponding to blue (i.e., blue light).

Red, green and blue are three basic colors of light emitted by pixels in the display panel, and the intensities of the three colors of light in the ambient light are directly detected so as to adjust the light-emitting intensity of the light of the corresponding color in the display panel according to the detected intensities of the light.

It should be noted that the arrangement order of the first light detection unit 21 to the third light detection unit 23 is not limited in the embodiment of the present disclosure, and may be adjusted according to actual needs.

Alternatively, when the display substrate further includes pixels emitting light of other colors, the display panel may further include light detection units corresponding to the other colors. For example, if the display substrate further includes a pixel emitting yellow light, the display panel further includes a light detection unit for detecting yellow light.

Optionally, the at least two light detection units 20 further comprise a fourth light detection unit 24. The fourth photo detection unit 24 is used for detecting the overall intensity of the ambient light, so that the display panel can adjust the brightness based on the light of at least two different wavelength bands, and meanwhile, the brightness can also be adjusted based on the overall intensity of the ambient light as a reference, so that the brightness adjustment of the display panel is more accurate.

Optionally, the at least two light detection units 20 further comprise a fifth light detection unit 25. The fifth light detection unit 25 is for detecting the intensity of noise light in the ambient light. For example, ambient light may be reflected or refracted inside the display panel after being incident on the display panel, thereby generating noise light. The detection result of the fifth light detection unit 25 may be used to correct the detection result of the other light detection unit, for example, by subtracting the detection result of the fifth light detection unit 25 from the detection result of the other light detection unit, the corrected detection result of the other light detection unit is obtained.

It should be noted that, in the embodiment of the present disclosure, the display panel may include some of the first to fifth light detection units, for example, the first light detection unit and the second light detection unit, and for example, the second light detection unit and the fourth light detection unit, and the like.

Optionally, the display panel further includes an Integrated Circuit (IC) chip 30, and the IC chip 30 is electrically connected to the light detection unit 20 for adjusting the light emitting intensity of the display panel based on the light of different wavelength bands detected by the light detection unit 20. Alternatively, the IC chip may be located in the peripheral region 102 of the display substrate 10 and at the first side of the display substrate 10. The photo detection unit 20 is located in the peripheral region 102 of the display substrate 10 and located at a second side of the display substrate, wherein the first side and the second side are opposite sides of the display substrate 10. The IC chip 30 and the photodetection unit 20 are connected by a signal line 40, and the signal line 40 is located in the peripheral region 102 of the display substrate 10. It should be noted that, for convenience of illustration, only one signal line 40 is schematically illustrated in fig. 1, and the signal line 40 is connected to one light detection unit 20, which is described in detail below.

The configuration of the light detection unit will be described below taking the first light detection unit as an example. The structure of the other light detection units is referred to the structure of the first light detection unit.

Fig. 2 is a schematic partial structure diagram of a display panel according to an embodiment of the present disclosure. As shown in fig. 2, the first light detecting unit 21 includes a photosensor 201 and a filter structure 202, the photosensor 201 being located between the filter structure 202 and the display substrate 10.

Wherein the filtering structure 202 is configured to allow light of a defined wavelength band to pass through. For example, as shown in fig. 2, the filter structure 202 in the first light detection unit 21 is a red filter structure that allows light in a wavelength band corresponding to red and filters light outside the wavelength band corresponding to red. The filtering structure 202 in the second light detecting unit 22 is a green filtering structure, which allows light in the wavelength band corresponding to green and filters light out of the wavelength band corresponding to green. The filter structure 202 in the third light detection unit 23 is a blue filter structure that allows light in a wavelength band corresponding to blue and filters light other than the wavelength band corresponding to blue. The filter structure 202 in the fourth light detection unit 24 is a colorless filter structure, i.e., a transparent structure, which allows light of all wavelength bands to pass through. The filter structure 202 in the fifth light detection unit 25 is a black filter structure, which allows light in the wavelength band corresponding to invisible light to pass through, and filters light in the wavelength band corresponding to visible light.

For example, the red, blue and green filter structures may be made of color-resistant materials corresponding to colors, the black filter structure may be made of a color-resistant material corresponding to black, and the like. In some examples, the material of the black filter structure is the same as the material of the black matrix.

Alternatively, in some examples, the fourth light detection unit 24 may not include the filtering structure 202.

The photo-sensor 201 is used to convert the received light signal into an electrical signal indicative of the intensity of the light received by the photo-sensor 211.

In some embodiments, photosensitive device 201 may include a PIN (positive intrinsic negative) device.

As shown in fig. 2, the PIN device 201 is a first PIN device, the first PIN device includes a first P layer 2011, a first I layer 2012 and a first N layer 2013, the first P layer 2011, the first I layer 2012 and the first N layer 2013 are sequentially arranged on the carrying surface of the display substrate 10, the first I layer 2012 is connected between the first P layer 2011 and the first N layer 2013, and the carrying surface is the surface of the display substrate 10 where the PIN device is located.

Illustratively, the material of the first P layer 2011 is a P-type semiconductor, for example, a semiconductor doped with boron element or indium element, and the semiconductor material includes, but is not limited to, a silicon crystal, a germanium crystal, low-temperature polysilicon, or the like. The first P layer 2011 contains more positively charged holes and less negatively charged electrons. The material of the first I layer 2012 is an intrinsic semiconductor, i.e., undoped semiconductor. Alternatively, the intrinsic semiconductor material in the first I layer 2012 may be one of silicon (Si), germanium (Ge), gallium arsenide (GaAs), and the like. The material of the first N layer 2013 is an N-type semiconductor, for example, the N-type semiconductor is a semiconductor doped with phosphorus element or antimony element, and the semiconductor material includes, but is not limited to, a silicon crystal, a germanium crystal, low-temperature polysilicon, or the like. The first N layer 2013 contains more negatively charged electrons and less positively charged holes.

Since the first P layer 2011 contains a large number of positively charged holes and the first N layer 2013 contains a large number of negatively charged electrons, the positively charged holes in the first P layer 2011 diffuse into the first N layer 2013, and the negatively charged electrons in the first N layer 2013 diffuse into the first P layer 2011. By the diffusion movement of the electrons and holes, a built-in electric field directed from the first N layer 2013 to the first P layer 2011 is formed. Under the action of the built-in electric field, negatively charged electrons drift from the first P layer 2011 to the first N layer 2013, positively charged holes drift from the first N layer 2013 to the first P layer 2011, original diffusion motion of the electrons and the holes is prevented, and when the diffusion motion and the drift motion reach dynamic balance, a depletion region is formed.

Ambient light is converted into an electrical signal in the depletion region. The wider the width of the depletion region, the more ambient light the PIN device can receive. Compared with a PN device, the first I layer 2012 in the PIN device increases the width of a depletion region, and converts more light in ambient light into an electric signal, so that the ambient light can be detected more accurately.

Illustratively, as shown in fig. 2, the PIN device 211 further includes a first gate 2014, the first gate 2014 is between the first I layer 2012 and the display substrate 10, and an orthographic projection of the first gate 2014 on the carrying surface at least partially coincides with an orthographic projection of the first I layer 2012 on the carrying surface. For example, the orthographic projection of the first gate 2014 on the carrying surface is completely coincident with the orthographic projection of the first I layer 2012 on the carrying surface, and for example, the orthographic projection of the first gate 2014 on the carrying surface is located within the orthographic projection of the first I layer 2012 on the carrying surface.

Illustratively, the first gate 2014 is used to apply a voltage to the PIN device to bring the PIN device 211 to a fully depleted state. The voltage value applied to the first gate 2014 may be obtained according to a test in an actual production process, for example, the voltage applied to the first gate 2014 in the embodiment of the present disclosure may be a positive voltage greater than 0V and not greater than 10V, for example, the voltage applied to the first gate 2014 may be 8V.

Fig. 3 is a schematic diagram of a depletion region and a non-depletion region of a PIN device provided by an embodiment of the present disclosure. As shown in fig. 3, the first I layer 2012 is divided into a lateral depletion region a, a longitudinal depletion region b, and a non-depletion region c. The lateral depletion region a extends from the PN junction of the first N layer 2013 corresponding to the first I layer 2012 to the direction of the first P layer 2011, and the longitudinal depletion region b extends from one side of the first I layer 2012 to the other side (e.g., from the bottom of the silicon film in the intrinsic region to the inside of the silicon film). By applying a voltage to the first gate 2014, a longitudinal depletion region b and a transverse depletion region a in the PIN device are expanded, and finally, a non-depletion region c is removed, so that the intrinsic region of the PIN device reaches a fully depleted state. The carrier recombination in the intrinsic region is reduced under the fully depleted state, so that the collection of photo-generated electron-hole pairs by the PIN device is improved, the device characteristics under the low-voltage working state are optimized, and the sensitivity of the PIN device for detecting ambient light is improved.

Optionally, the first gate 2014 may be made of a metal having light reflectivity, so that light passing through the first I layer 2012 and not converted into an electrical signal is reflected back to the first I layer 2012 and converted into an electrical signal, thereby improving the efficiency of detecting light by the PIN device. Illustratively, the material of the first gate 2014 may be molybdenum, nickel-manganese alloy, nickel-chromium alloy, nickel-molybdenum-iron alloy, and the like.

Illustratively, referring again to fig. 2, the display panel further includes a shielding structure 26, the shielding structure 26 is located between two adjacent filtering structures 202, for example, the shielding structure 26 may be located between a red filtering structure 202 and a green filtering structure 202, and the shielding structure 26 is used to prevent crosstalk between adjacent light detecting units, i.e. prevent light from entering the photosensitive devices of the adjacent light detecting units after passing through the filtering structures.

For example, the first P layer 2011, the first I layer 2012, the first N layer 2013 are the same as the active layer in the pixel of the display substrate 10, the filtering structure 202 is the same as the color film layer of the display panel, and the first gate 2014 may be added in the original manufacturing process. Therefore, a film layer including the first gate 2014 may be added to the original process for preparing the display functional film layer of the display substrate 10, so as to prepare the light detecting unit 20 without modifying the structure of the existing film layer.

In the embodiments of the present disclosure, the same layer refers to a relationship between layers formed simultaneously in the same step or steps of the manufacturing process. In one example, the P layer and the active layer of the pixel cell are both formed by performing one or more steps of the same patterning in the same layer of material, and thus, are in the same layer. In another example, the P layer and the active layer of the pixel unit may be formed in the same layer by simultaneously performing the step of forming the P layer and the step of forming the active layer of the pixel unit. The term "layer" does not always mean that the thickness of the layer or the layers in a cross-sectional view are the same.

The structure of a display panel provided in the embodiments of the present disclosure is exemplarily described below by taking a display substrate as an LTPS substrate as an example.

Fig. 4 is a schematic structural diagram of a display panel provided in an embodiment of the present disclosure, and as shown in fig. 4, the display panel includes a substrate 1a, and a barrier layer 2a, a buffer layer 3a, a semiconductor layer 4a, a first gate insulating layer 5a, a first gate metal layer 6a, a second gate insulating layer 7a, a second gate metal layer 8a, an interlayer dielectric layer 9a, a source-drain metal layer 10a, a planarization layer 11a, an anode layer 12a, a pixel defining layer 13a, a light emitting material layer 14a, a cathode layer 15a, an encapsulation layer 16a, a color resistance layer 17a, and a black matrix 18a that are sequentially stacked on the substrate 1 a.

As described above, the sub-pixel includes the driving TFT, of which only the structure is shown, and the switching TFT, which is the same as the structure shown in the drawings, is not described in detail herein for the sake of convenience. The gate electrode 102a of the driving TFT is located on the first gate metal layer 6 a. The active layer 101a of the driving TFT is located on the semiconductor layer 4 a. The source and drain electrodes of the driving TFT are located in the source-drain metal layer 10 a. The source and drain electrodes are connected to the active layer 101a through via holes penetrating the first gate insulating layer 5a, the second gate insulating layer 8a, and the interlayer dielectric layer 9a, respectively.

The sub-pixel further comprises a capacitor, one plate 201a of which is located on the first gate metal layer 6a, and the other plate 202a of which is located on the second gate metal layer 8 a.

The pixel defining layer 13a has openings therein, one for each sub-pixel. One light emitting device is correspondingly arranged in each opening. The anode of the light emitting device is located at the anode layer 12a, the light emitting layer is located at the light emitting material layer 14a, and the cathode is located at the cathode layer 15 a. The anode of the light emitting device is connected to the source or drain of the driving TFT through a via hole in the planarization layer 11 a.

The display panel also includes a light detection unit 20 located in the peripheral region 102. The light detection unit comprises a light sensitive device 201 and a filtering structure 202. The photosensitive device includes a first P layer 2011, a first I layer 2012, a first N layer 2013, and a first gate 2014.

As shown in fig. 4, the first P layer 2011, the first I layer 2012, the first N layer 2013 are located on the semiconductor layer 4a, i.e. on the same layer as the active layer of the sub-pixel. The filter structure 202 is located on the color-resisting layer 17a, i.e. on the same layer as the color-resisting blocks in the color film layer. The first gate 2014 is located on a third gate metal layer located between the barrier layer 2a and the buffer layer 3 a.

Illustratively, the substrate base 1a may include a glass base, a Polyimide (PI) base, a plastic base, or the like. PI may be used as the material of the barrier layer 2 a. The buffer layer 3a may be a silicon oxide layer, a silicon nitride layer, or a silicon oxynitride layer, or a stack of any two or three of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer. The material of the active layer 101a in the semiconductor layer 4a may be low temperature polysilicon. The material of the first gate insulating layer 5a and the second gate insulating layer 7a may be an insulating material such as silicon nitride or silicon oxide. The material of the first gate metal layer 6a and the second gate metal layer 8a may be molybdenum, nickel-manganese alloy, nickel-chromium alloy, nickel-molybdenum-iron alloy, or the like. The interlayer dielectric layer 9a may be made of an insulating material such as silicon nitride or silicon oxide. The source drain metal layer 10a may be made of metal, indium tin oxide, metal oxide, or the like. The anode layer 12a and the cathode layer 15a may be made of metal or indium tin oxide. The material of the planarization layer 11a may be resin. The encapsulation layer 16a includes at least one of an organic encapsulation layer and an inorganic encapsulation layer. The material of the organic encapsulation layer includes, but is not limited to, organic ink, etc., and the material of the inorganic encapsulation layer includes, but is not limited to, silicon nitride, silicon oxide, etc.

The following description will exemplarily describe a structure of another display panel provided in the embodiments of the present disclosure, taking the display substrate as an LTPO substrate as an example.

Fig. 5 is a schematic structural diagram of another display panel provided in the embodiment of the present disclosure, and as shown in fig. 5, the LTPO display panel includes a substrate 1a, a barrier layer 2a, a buffer layer 3a, a semiconductor layer 4a, a first gate insulating layer 5a, a first gate metal layer 6a, a second gate insulating layer 7a, a second gate metal layer 8a, a third gate insulating layer 19a, an oxide semiconductor layer 20a, a fourth gate insulating layer 21a, a third gate metal layer 22a, an interlayer dielectric layer 9a, a source-drain metal layer 10a, a planarization layer 11a, an anode layer 12a, a pixel defining layer 13a, a light emitting material layer 14a, a cathode layer 15a, an encapsulation layer 16a, a color resistance layer 17a, and a black matrix 18 a.

The active layer 101a of the driving TFT is located on the semiconductor layer 4 a. The source and drain electrodes of the driving TFT are located in the source-drain metal layer 10 a. The source and drain electrodes are connected to the active layer 101a through via holes penetrating the first gate insulating layer 5a, the second gate insulating layer 7a, the third gate insulating layer 19a, the fourth gate insulating layer 21a, and the interlayer dielectric layer 9a, respectively. The gate electrode 102a of the driving TFT is located on the first gate metal layer 6 a.

The active layer 301a of the switching TFT is located on the oxide semiconductor layer 20 a. The source and drain electrodes of the switching TFT are located in the source-drain metal layer 10 a. The source and drain electrodes are connected to the active layer 301a through via holes penetrating the fourth gate insulating layer 21a and the interlayer dielectric layer 9a, respectively. The switching TFT has two

gates

302a and 303a, the gate 302a being located on the second gate metal layer 8a and the gate 303a being located on the third gate metal layer 22 a.

Optionally, the display panel further includes an isolation dam 23a and a slit dam 24 a. The barrier bank 23a is positioned on the interlayer dielectric layer 9a and disposed around the display region 101. Among them, the barrier bank 23a serves to restrict the position of the encapsulation layer and prevent the overflow of the encapsulation material. The crack dams 24a are located at the outer edge of the display panel, extend from the surface of the barrier layer 2a to the interlayer dielectric layer 9a and penetrate through the interlayer dielectric layer 9 a. The crack dams 24a are used for preventing the display panel damage caused by the cutting error of the display panel in the actual production, for example, in the actual production process, a plurality of display panels are often prepared on the basis of the same substrate, the display panels are required to be cut into the display panels after the preparation is completed, the crack dams 24a are arranged at the edges of the display panels, so that the crack dams 24a can only be damaged by the cutting error without influencing other structures in the display panels.

For example, the third gate insulating layer 19a and the fourth gate insulating layer 21a may be made of an insulating material such as silicon nitride or silicon oxide. The third gate metal layer 22a may be made of nickel, nickel-manganese alloy, nickel-chromium alloy, nickel-molybdenum-iron alloy, or the like. The material of the oxide semiconductor layer 20a may be IGZO or the like.

The structure and materials of the same level in fig. 5 as in fig. 4 are described with reference to fig. 4, and are not repeated herein.

Alternatively, the structure of the light detecting unit in fig. 2 may be replaced with the structure shown in fig. 6.

Fig. 6 is a schematic structural diagram of another light detection unit provided by the embodiment of the present disclosure, and as shown in fig. 6, the light detection unit includes a light-sensing device 201 and a filtering structure 202. Photosensitive device 201 includes a first P layer 2011, a first I layer 2012, a first N layer 2013, a first gate 2014, a second N layer 612, a second I layer 611, and a second gate 613.

The arrangement of the first P layer 2011, the first I layer 2012, the first N layer 2013 and the first gate 2014 is shown in fig. 2. The second N layer 612 and the second I layer 611 are sequentially arranged in the arrangement direction of the first P layer 2011, the first I layer 2012, and the first N layer 2013, and the second I layer 611 is connected between the first P layer 2011 and the second N layer 612. The second gate 613 is between the second I layer 611 and the display substrate 10, and an orthogonal projection of the second gate 613 on the carrying surface at least partially coincides with an orthogonal projection of the second I layer 611 on the carrying surface.

2 PIN devices are formed by the first P layer 2011, the first I layer 2012, the first N layer 2013, the first gate 2014, the second I layer 611, the second N layer 612 and the second gate 613, and the 2 PIN devices share the same P layer.

Illustratively, as shown in fig. 6, 2 PIN devices share the filter structure 202, for example, 2 PIN devices may share one red filter structure, and then the light detection unit including the 2 PIN devices is used to detect the intensity of light in a wavelength band corresponding to red (i.e., red light).

With the same structure, more PIN devices can be formed, for example, a third I layer and a third P layer are sequentially added on the side of the second N layer 612 far away from the second I layer 611, and the third I layer is connected with the second N layer 612 and the third P layer, so that 3 PIN devices are formed. In a similar way, more PIN devices can be formed by adopting the method, the formed PIN devices share the P layer or the N layer between every two PIN devices, and the PIN devices can share the same light filtering structure. Compared with the traditional mode that a plurality of PIN devices are arranged in parallel independently, the structure can prepare more PIN devices in a certain space, the space utilization rate of the display panel is improved, and the light receiving area of the photosensitive device of each light detection unit is increased.

Optionally, the filter structure of the light detection unit in the embodiment of fig. 6 may also be the same as that shown in the embodiment of fig. 2, that is, each PIN device is provided with one filter structure, a shielding structure is provided between adjacent filter structures, and the filter structures of a plurality of PIN devices in the same photosensitive device are filter structures of the same color, for example, the filter structures of a plurality of PIN devices in the same photosensitive device may all be red filter structures.

Fig. 7 is a schematic diagram of connection between a photosensor and a signal line according to an embodiment of the present disclosure. As shown in fig. 7, the signal line 40 includes a first conductive line 41, a second conductive line 42, and a third conductive line 43. One end of the first wire 41 is connected to one of the P layer or the N layer of the photosensitive devices 201, and serves as an input wire to supply power to the photosensitive devices 201, so that the photosensitive devices 201 operate normally, and the other end of the first wire 41 may be connected to the same power signal line, that is, the same power supply is used to supply power to the photosensitive devices 201. The first conductive line 41 may be located at the source-drain metal layer 10 a. One end of the second wire 42 is connected to the other of the P layer or the N layer of the plurality of photosensors 201 as an output wire for outputting the electric signals output from the plurality of photosensors 201, and the other end of the second wire 42 is connected to the IC chip 30. The second conductive line 42 may be located at the source-drain metal layer 10 a. The third conductive line 43 is used to connect the gates of the plurality of photosensitive devices 211 and apply a voltage to the photosensitive device 201 such that the photosensitive device 201 reaches a fully depleted state. The third conductive line 43 may be located at the fourth gate metal layer.

Illustratively, when the photosensor is configured as the photosensor 201 in the embodiment shown in fig. 6, the first conductive line 41 may be connected to any one of the P layer and the N layer at both ends among the plurality of PIN devices of the photosensor 201, for example, the first conductive line 41 is connected to the first N layer 2013, the second conductive line 42 may be connected to the other one of the P layer and the N layer at both ends among the plurality of PIN devices, for example, the second conductive line 42 is connected to the second N layer 612.

Fig. 8 is a schematic partial structure diagram of another display panel provided in the embodiment of the present disclosure. As shown in fig. 8, the light detection unit 20 includes a photosensor 201 and a filter structure 202, the photosensor 201 includes a PIN device 811, the PIN device 811 is a second PIN device including a P layer 8111, an I layer 8112, and an N layer 8113. The P layer 8111, the I layer 8112, and the N layer 8113 are sequentially stacked on the display substrate 10 in a direction away from the display substrate 10.

Alternatively, in other embodiments, the N layer, the I layer, and the P layer may be sequentially stacked on the display substrate 10 in a direction away from the display substrate 10. That is, the N layer is located on the side of the I layer close to the display substrate 10, and the P layer is located on the side of the I layer far from the display substrate 10.

In some examples, the P layers of the respective light detection units 20 are spaced apart from each other. In other embodiments, the P-layers of the individual light detecting units are interconnected, i.e. multiple light sensitive devices may share the same P-layer. Thus, when the photodetecting unit is manufactured, only a large P layer needs to be formed on the display substrate 10, reducing the precision requirement for the manufacturing process of the display panel.

Illustratively, the second photosensitive device further includes an electrode 8114, the electrode 8114 being connected to the N layer 8113.

Illustratively, as shown in fig. 8, the display panel further includes a shielding structure 26, the structure and function of which refer to those related to the embodiment of fig. 2, and detailed description is omitted here.

Illustratively, the P layer 8111 is layered with the active layer in the sub-pixel of the display substrate 10, and the filtering structure 202 is layered with the color film layer of the display panel. The I layer 8112 and the N layer 8113 may be prepared by opening a hole in a film layer of an original preparation process and then filling the hole, the step of opening the hole may be combined with edge etching of the original preparation process, that is, opening the hole while performing the edge etching, and the step of filling the hole with the I layer 8112 and the N layer 8113 may be completed by a separate step, that is, after the hole is opened by the edge etching, a step of filling is additionally and separately added, so that the steps of forming the I layer 8112 and the N layer 8113 may be added in the preparation process of the original display function film layer of the display substrate 10, thereby preparing the light detection unit 20 with less change of the preparation process of the display panel.

The following description will exemplarily describe a structure of another display panel provided in the embodiments of the present disclosure, taking a display substrate as an LTPS substrate as an example.

Fig. 9 is a schematic structural diagram of another display panel provided in the embodiment of the present disclosure, and as shown in fig. 9, the LTPS display panel includes a substrate 1b, a barrier layer 2b, a buffer layer 3b, a semiconductor layer 4b, a first gate insulating layer 5b, a first gate metal layer 6b, a second gate insulating layer 7b, a second gate metal layer 8a, an interlayer dielectric layer 9b, a source-drain metal layer 10b, a planarization layer 11b, an anode layer 12b, an upper electrode layer 26b, a pixel defining layer 13b, a light emitting material layer 14b, a cathode layer 15b, an encapsulation layer 16b, a color resistance layer 17b, and a black matrix 18 b.

As described above, the sub-pixel includes the driving TFT, of which only the structure is shown, and the switching TFT, which is the same as the structure shown in the drawings, is not described in detail herein for the sake of convenience. The gate electrode 102b of the driving TFT is located on the first gate metal layer 6 b. The active layer 101b of the driving TFT is located on the semiconductor layer 4 b. The source and drain electrodes of the driving TFT are located in the source-drain metal layer 10 b. The source and drain electrodes are connected to the active layer 101b through via holes penetrating the first gate insulating layer 5b, the second gate insulating layer 8b, and the interlayer dielectric layer 9b, respectively.

The sub-pixel further comprises a capacitor, one plate 201b of which is located on the first gate metal layer 6b and the other plate 202b of which is located on the second gate metal layer 8 b.

The pixel defining layer 13b has openings therein, one for each sub-pixel. One light emitting device is correspondingly arranged in each opening. The anode of the light emitting device is located at the anode layer 12b, the light emitting layer is located at the light emitting material layer 12b, and the cathode is located at the cathode layer 13 b. The anode of the light emitting device is connected to the source or drain of the driving TFT through a via hole in the planarization layer 11 b.

The display panel also includes a light detection unit 20 located in the peripheral region 102. The light detection unit comprises a light sensitive device 201 and a filtering structure 202. The photosensitive device includes a P layer 8111, an I layer 8112, and a first N layer 8113.

The P layer 8111 is located on the semiconductor layer 4b, i.e., on the same level as the active layer of the sub-pixel. The I layer 8112 is located in an opening through the first gate insulation layer 5b, the second gate insulation layer 7b and the interlayer dielectric layer 9 b. The N layer 8113 is located on a side of the I layer 8112 remote from the display substrate 10. The orthographic projection of the N layer 8113 on the bearing surface is at least partially overlapped with the orthographic projection of the I layer 8112 on the bearing surface. The filtering structure 202 is located on the color-resisting layer 17b, i.e. on the same layer as the color-resisting blocks in the color film layer.

Illustratively, the light detecting unit 20 further includes an electrode 8114, and the electrode 8114 is located on the upper electrode layer 26 b. Electrode 8114 is connected to N layer 8113 through vias in planarization layer 11 b.

Illustratively, the material of the upper electrode layer 26b may be Indium Tin Oxide (ITO). Amorphous silicon may be used as the material of the I layer 8112. The material of the N layer 8113 may be amorphous silicon doped with phosphorus element or antimony element.

The materials in fig. 9 at the same level as in fig. 4 are described with reference to fig. 4, and are not repeated herein.

Fig. 10 is a schematic structural diagram of another display panel provided in the embodiment of the present disclosure, and as shown in fig. 10, the LTPO display panel includes a substrate 1b, a barrier layer 2b, a buffer layer 3b, a semiconductor layer 4b, a first gate insulating layer 5b, a first gate metal layer 6b, a second gate insulating layer 7b, a second gate metal layer 8b, a third gate insulating layer 19b, an oxide semiconductor layer 20b, a fourth gate insulating layer 21b, a third gate metal layer 22b, an interlayer dielectric layer 9b, a source-drain metal layer 10b, a planarization layer 11b, an anode layer 12b, an upper electrode layer 26b, a pixel defining layer 13b, a light emitting material layer 14b, a cathode layer 15b, an encapsulation layer 16b, a color resistance layer 17b, and a black matrix 18 b.

The active layer 101b of the driving TFT is located on the semiconductor layer 4 b. The source and drain electrodes of the driving TFT are located in the source-drain metal layer 10 b. The source and drain electrodes are connected to the active layer 101b through via holes penetrating the first gate insulating layer 5b, the second gate insulating layer 7b, the third gate insulating layer 19b, the fourth gate insulating layer 21b, and the interlayer dielectric layer 9b, respectively. The gate electrode 102b of the driving TFT is located on the first gate metal layer 6 b.

The active layer 301b of the switching TFT is located on the oxide semiconductor layer 20 b. The source and drain electrodes of the switching TFT are located in the source-drain metal layer 10 b. The source and drain electrodes are connected to the active layer 301b through via holes penetrating the fourth gate insulating layer 21b and the interlayer dielectric layer 9b, respectively. The switching TFT has two

gates

302b and 303b, the gate 302b being located on the second gate metal layer 8b and the gate 303b being located on the third gate metal layer 22 b.

Optionally, the display panel further includes an isolation dam 23b and a crack dam 24b, and the related contents refer to the embodiment shown in fig. 5, which is not described herein again.

Fig. 11 is a schematic diagram of connection between another photosensor and a signal line according to an embodiment of the present disclosure. As shown in fig. 11, the signal line 40 includes a fourth conductive line 44 and a fifth conductive line 45. The structure of the photosensitive device 201 is as in the embodiment shown in fig. 8, one end of the fourth conducting wire 44 is connected to the P layers of the photosensitive devices 201, and serves as an input conducting wire to supply power to the photosensitive devices 201, so that the photosensitive devices 201 operate normally, and the other end of the fourth conducting wire may be connected to the same power signal line, that is, the same power supply is used to supply power to the photosensitive devices 201; one end of the fifth wire 45 is connected to the N layers of the plurality of photosensors 201 as an output wire for outputting the electric signals output from the plurality of photosensors 201, and the other end of the fifth wire 45 is connected to the IC chip 30.

Referring to fig. 9 and 10, the fourth conductive line 44 and the fifth conductive line 45 are located on the source-drain metal layer 10 b. The fourth wire 44 is connected to the P layer 8111 through a via hole penetrating the first gate insulating layer 5b, the second gate insulating layer 7b, and the interlayer dielectric layer 9 b. The fifth wire 45 is connected to the electrode through a via hole penetrating the planarization layer 11 b.

Fig. 12 is a schematic diagram of a method for manufacturing a display panel according to an embodiment of the present disclosure, as shown in fig. 13, the method includes:

in step 1201, a display substrate is provided.

In step 1202, at least two light detection units are formed on a display substrate. At least two light detection units for detecting intensities of light in different wavelength bands in the ambient light are present in the at least two light detection units, the light in the different wavelength bands having different colors.

In step 1202, at least two photo detection units formed on the display substrate and at least a portion of the film layer of the pixel unit of the display substrate are formed by the same patterning process.

Fig. 13 is a schematic diagram of a manufacturing method of a display panel provided in an embodiment of the present disclosure. The method is used to prepare a display panel as shown in fig. 4. As shown in fig. 13, the method includes:

in step 1301, a barrier layer and a fourth gate metal layer are sequentially formed on the substrate, where the fourth gate metal layer includes the first gate.

Fig. 14 to 18 are process diagrams of manufacturing a display panel according to an embodiment of the present disclosure. As shown in fig. 14, the barrier layer 2a is located on the surface of the substrate base plate 1a, and the first gate 2014 is located on the surface of the barrier layer 2a and in the peripheral region of the substrate base plate 1 a.

In step 1302, a buffer layer and an intrinsic semiconductor layer are sequentially formed on the barrier layer.

Illustratively, as shown in fig. 15, a buffer layer 3a is formed on the barrier layer 2a, and an intrinsic semiconductor material layer 4 a' is formed on the buffer layer 3 a; and carrying out patterning treatment on the intrinsic semiconductor material layer to obtain an intrinsic semiconductor pattern layer.

In step 1303, a first gate insulating layer and a first gate metal layer are sequentially formed on the intrinsic semiconductor layer.

Exemplarily, as shown in fig. 16, a first gate insulating layer 5a and a first gate metal layer 6a are formed on the intrinsic semiconductor layer 4 a. The first gate metal layer includes a gate 102a, one plate 201a of a capacitor, and a shielding structure 2015. Then, carrying out P-type doping on a partial region of the active layer 101a under the shielding of the gate 102a so as to be connected with a source drain subsequently; meanwhile, the intrinsic semiconductor layer 4 a' is P-doped under the shadow of the shadow structure 2015, forming a first P layer 2011.

The forming process of the first gate metal layer 6a includes: a metal material layer is formed on the first gate insulating layer 5a, and then the metal material layer is patterned to obtain the first gate metal layer 6 a.

In step 1304, the portion of the first gate metal layer above the light detecting unit is removed.

I.e. the shielding structure 2015 is removed, as shown in fig. 17.

In step 1305, a photoresist is coated on the first gate metal layer, and the intrinsic semiconductor layer is doped N-type under the shielding of the photoresist.

Illustratively, as shown in fig. 18, a layer of photoresist 1801 is coated on the first gate metal layer 6a, and the photoresist covers the gate electrode 102a and the plate 201a and partial regions of the intrinsic semiconductor layer 4a ', and exposes the portions of the intrinsic semiconductor layer 4 a' that need to be doped N-type. The exposed portion is N-doped to form a first N layer 2013.

In step 1306, the photoresist is removed to prepare a subsequent layer of the display substrate.

The photoresist 1801 is removed, and then a second gate insulating layer 7a, a second gate metal layer 8a, an interlayer dielectric layer 9a, a source-drain metal layer 10a, a planarization layer 11a, an anode layer 12a, a pixel defining layer 13a, a light emitting material layer 14a, a cathode layer 15a, an encapsulation layer 16a, a color resistance layer 17a, a black matrix 18a, and a filtering structure 202 are sequentially formed on the first gate metal layer 6 a. A structure as shown in fig. 4 is obtained.

Fig. 19 is a schematic view of another display panel manufacturing method provided in the embodiments of the present disclosure. The method is used to prepare a display panel as shown in fig. 9. As shown in fig. 19, the method includes:

in step 1901, a barrier layer, a buffer layer, and an intrinsic semiconductor layer are sequentially formed on a base substrate.

Fig. 20 to 27 are diagrams illustrating a manufacturing process of another display panel according to an embodiment of the present disclosure. Sequentially forming a barrier layer 2b and a buffer layer 3b on the substrate base plate 1b, and then forming an intrinsic semiconductor material layer 4 b' on the buffer layer 3 b; the intrinsic semiconductor material layer is patterned to obtain an intrinsic semiconductor pattern layer, as shown in fig. 20.

In step 1902, a first gate insulating layer and a first gate metal layer are sequentially formed on the intrinsic semiconductor layer.

Exemplarily, as shown in fig. 21, a first gate insulating layer 5b is formed on the intrinsic semiconductor layer 4 b', and a first gate metal layer 6b is formed on the first gate insulating layer 5 b. The first gate metal layer 6b includes the gate 102b and one plate 201b of the capacitor. Then, carrying out P-type doping on a partial region of the active layer 101b under the shielding of the gate 102b so as to be connected with a source drain subsequently; the intrinsic semiconductor layer 4 b' is then P-doped to form a P layer 8111.

The forming process of the first gate metal layer 6b includes: a metal material layer is formed on the first gate insulating layer 5b, and then the metal material layer is patterned to obtain the first gate metal layer 6 b.

In step 1903, a second gate insulating layer, a second gate metal layer, an interlayer dielectric layer, and a source-drain metal layer are sequentially formed on the first gate metal layer.

As shown in fig. 22, a second gate insulating layer 7b, a second gate metal layer 8a, an interlayer dielectric layer 9b, and a source-drain metal layer 10b are sequentially formed on the first gate metal layer 6 b. The second gate metal layer 8a comprises the other plate 202b of the capacitor. The source-drain metal layer 10b includes source and drain electrodes of the driving TFT, fourth and fifth

conductive lines

44 and 45.

In step 1904, an opening is formed over the P layer.

As shown in fig. 23, an opening is formed above the P layer 8111, penetrating the first gate insulating layer 5b, the second gate insulating layer 7b, and the interlayer dielectric layer 9 b.

Alternatively, the opening may be formed after the first gate insulating layer 5b is formed as described above.

In step 1905, amorphous silicon is deposited in the opening, and then a portion of the amorphous silicon opposite to the P layer is N-doped to form an I layer and an N layer on the I layer.

As shown in fig. 24, amorphous silicon is deposited in the openings, and then the top of the amorphous silicon is N-doped, forming an I layer 8112 and an N layer 8113.

In step 1906, a planarization layer is formed on the source drain metal layer.

As shown in fig. 25, the planarization layer 11b covers the source-drain metal layer 10b and the planarization layer 9 b.

In step 1907, an anode layer is formed over the planarization layer.

As shown in fig. 26, an anode layer 12b is formed on the planarization layer 11 b. Alternatively, when the anode layer 12b is formed, patterning may be performed using a wet process, so that roughness of the amorphous silicon surface may be improved.

In step 1908, an upper electrode layer is formed on the N layer.

As shown in fig. 27, an upper electrode layer 26b is formed on the N layer 8113.

In step 1909, subsequent layers of the display substrate are formed on the planarization layer.

A pixel defining layer 13b, a light emitting material layer 14b, a cathode layer 15b, an encapsulating layer 16b, a color resist layer 17b, a black matrix 18b, and a filter structure 202 are formed on the planarization layer 11b, resulting in a structure as shown in fig. 9.

Fig. 28 is a schematic diagram of a control method of a display panel according to an embodiment of the present disclosure, and as shown in fig. 28, the control method includes:

in step 2801, the light intensity of the ambient light detected by the at least two light detection units is obtained.

At least two light detection units for detecting intensities of light in different wavelength bands in the ambient light are present among the at least two light detection units, the light in the different wavelength bands having different colors.

In step 2802, the brightness of the display panel is controlled based on the light intensity.

For example, there are two light detection units, one of which detects that the intensity of the ambient light in the wavelength band corresponding to red is large and the other of which detects that the intensity of the ambient light in the wavelength band corresponding to green is small, so that the intensity of red light output by the display panel can be increased, and the intensity of green light output by the display panel can be decreased, thereby controlling the brightness of the display panel.

The embodiment of the present disclosure provides a display device including any one of the display panels as provided in the foregoing embodiments.

Illustratively, the display device may be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, and a navigator.

The above description is intended to be exemplary only and not to limit the present disclosure, and any modification, equivalent replacement, or improvement made without departing from the spirit and scope of the present disclosure is to be considered as the same as the present disclosure.

Claims

1. A display panel characterized in that the display panel comprises a display substrate (10) and at least two light detection units (20) on the display substrate (10), at least two of the at least two light detection units (20) being present for detecting intensities of light of different wavelength bands in ambient light, the light of different wavelength bands having different colors.

2. The display panel according to claim 1, wherein the at least two light detection units (20) comprise at least two of the following light detection units: a first light detection unit (21), a second light detection unit (22), a third light detection unit (23), a fourth light detection unit (24), and a fifth light detection unit (25);

the first light detection unit (21) is configured to detect an intensity of red light in the ambient light, the second light detection unit (22) is configured to detect an intensity of green light in the ambient light, the third light detection unit (23) is configured to detect an intensity of blue light in the ambient light, the fourth light detection unit (24) is configured to detect an overall intensity of the ambient light, and the fifth light detection unit (25) is configured to detect an intensity of noise light in the ambient light.

3. The display panel according to claim 1 or 2, wherein the light detection unit (20) comprises a light sensitive device (201) and a filter structure (202) on the display substrate (10), the light sensitive device (201) being located between the filter structure (202) and the display substrate (10).

4. A display panel as claimed in claim 3 characterized in that the light-sensitive device (211) is a first PIN device comprising: a first P layer (2011), a first I layer (2012), a first N layer (2013), and a first gate (2014);

the first P layer (2011), the first I layer (2012) and the first N layer (2013) are sequentially arranged on a bearing surface of the display substrate (10), the first I layer (2012) is connected between the first P layer (2011) and the first N layer (2013), and the bearing surface is a surface of the display substrate (10) where the first PIN device is located;

the first gate (2014) is between the first I layer (2012) and the display substrate (10), and an orthographic projection of the first gate (2014) on the carrying surface at least partially coincides with an orthographic projection of the first I layer (2012) on the carrying surface.

5. The display panel according to claim 4, wherein the first PIN device further comprises a second N layer (612), a second I layer (611), and a second gate (613), the second N layer (612) and the second I layer (611) being sequentially arranged in an arrangement direction of the first P layer (2011), the first I layer (2012), and the first N layer (2013), and the second I layer (611) being connected between the first P layer (2011) and the second N layer (612).

6. The display panel according to claim 4, wherein the first P layer (2011), the first I layer (2012), the first N layer (2013) are in the same layer as active layers in pixels of the display substrate (10);

the display panel further comprises a color film layer on the display substrate (10), and the light filtering structure (202) and the color film layer are in the same layer.

7. The display panel according to claim 3, wherein the photosensitive device (201) is a second PIN device comprising a P layer (9111), an I layer (9112), and an N layer (9113) sequentially stacked on the display substrate (10), the P layer (9111) being in a same layer as an active layer in a pixel of the display substrate (10);

8. The display panel according to any one of claims 1 to 7, wherein the display substrate (10) includes a display region (101) and a peripheral region (102) surrounding the display region, and the light detection unit (20) is located in the peripheral region (102) of the display substrate (10).

9. A method for manufacturing a display panel, the method comprising:

providing a display substrate;

at least two light detection units are formed on the display substrate, and at least two light detection units for detecting intensities of lights in different wavelength bands in ambient light, the lights in the different wavelength bands having different colors, are present in the at least two light detection units.

10. A display device characterized by comprising the display panel according to any one of claims 1 to 8.