JP7137395B2 - LAMINATED PRODUCTION METHOD, LAMINATED BODY, AND ELECTRONIC DEVICE MANUFACTURING METHOD - Google Patents

Description

The present invention relates to a method of manufacturing a laminate, a method of manufacturing a laminate, and an electronic device.

2. Description of the Related Art In recent years, as an example of a method of manufacturing an electronic device, a method called a so-called fan-out PLP (Fan-out Panel Level Package) technique has been known. In the fan-out PLP technology, for example, a separation layer that changes in quality by absorbing light or heating is formed on a support such as a wafer, and a substrate having electronic components is laminated thereon. After that, light or heat is applied to the separation layer to separate the substrate from the support, and the substrate is cut into individual electronic components to obtain an electronic device (see, for example, Patent Document 1).

Such fan-out PLP technology includes a method called chip-first, in which rewiring is formed on the substrate after stacking the substrate on the isolation layer, There is a method called RLD-first for stacking substrates.

JP-A-9-29167

In the RLD-first technology described above, an adhesive layer is formed on the isolation layer, and a rewiring is patterned on the adhesive layer. When patterning the rewiring, for example, an insulating layer is formed on the entire surface of the adhesive layer, a photoresist is applied on the insulating layer, and exposure and development are performed. Since these treatments include a step of heating the photoresist, the heat may cause the adhesive layer to shrink or deform. When the adhesive layer shrinks or deforms, the insulating layer formed on the adhesive layer moves, and the positions or intervals of the patterned insulating layers deviate from design values. As a result, the position of the rewiring formed between the insulating layers is shifted or the width of the wiring is varied, and the use of such rewiring causes defective products, which is a factor in lowering the yield.

The present invention provides a method for manufacturing a laminate capable of suppressing a decrease in yield by suppressing deformation or movement of an insulating layer formed on an adhesive layer and accurately forming rewiring, a laminate, and An object of the present invention is to provide a method of manufacturing an electronic device.

In the first aspect of the present invention, a support, a separation layer that changes in quality due to light absorption or heating, an adhesive layer, and a protective layer that is used for forming a rewiring layer and has a melting point of 300° C. or higher are combined into Laminating in order, and forming the protective layer on the entire surface of the adhesive layer on the side where the support does not exist .

In the second aspect of the present invention, a support, a separation layer that changes in quality due to light absorption or heating, an adhesive layer, and a protective layer that is used for forming a rewiring layer and has a melting point of 500° C. or higher are A laminate is provided in which the layers are laminated in order and the protective layer is formed on the entire surface of the adhesive layer on the side where the support is not present .

In a third aspect of the present invention, a laminate is produced by the method for producing a laminate according to the first aspect, the separation layer is altered to separate the support from the laminate, and the substrate is removing the adhesive layer and the separation layer from the substrate to obtain an electronic device including the electronic component.

According to the present invention, since a protective layer having a melting point of 300° C. or higher is laminated on the adhesive layer, even if a heating process is performed when forming rewiring on the protective layer, deformation or Movement can be suppressed. As a result, movement of the rewiring formed on the adhesive layer or variation in wiring width can be suppressed, and by forming the rewiring with high accuracy, the occurrence of defective products can be suppressed, and a decrease in yield can be suppressed.

4 is a flow chart showing an example of a method of manufacturing a laminate and a method of manufacturing an electronic device according to the embodiment. 5 is a flow chart showing an example of processing of a rewiring layer forming step; (A) and (B) are diagrams showing a step of a method for manufacturing an electronic device. 4A and 4B are diagrams showing one step of the method for manufacturing a laminate and the method for manufacturing an electronic device, subsequent to FIG. 3; FIG. 4A and 4B are diagrams showing one step of the method for manufacturing a laminate and the method for manufacturing an electronic device, following FIG. 4; FIG. 6A and 6B are diagrams showing one step of the method of manufacturing a laminate and the method of manufacturing an electronic device, subsequent to FIG. 5; FIG. 7A and 7B are diagrams showing one step of the method for manufacturing the laminate and the method for manufacturing the electronic device, subsequent to FIG. 6; FIG. 8A and 8B are diagrams illustrating one step of the method for manufacturing a laminate and the method for manufacturing an electronic device, subsequent to FIG. 7; FIG. 9A and 9B are diagrams showing one step of the method for manufacturing a laminate and the method for manufacturing an electronic device, subsequent to FIG. 8; FIG. 10A and 10B are diagrams showing one step of the method for manufacturing the laminate and the method for manufacturing the electronic device, subsequent to FIG. 9; FIG. 11A and 11B are diagrams showing one step of the method for manufacturing the laminate and the method for manufacturing the electronic device, subsequent to FIG. 10; FIG. 9 is a flow chart showing another example of processing of a rewiring layer forming step; (A) and (B) are diagrams showing one step of a method for manufacturing a laminate and a method for manufacturing an electronic device. 14A and 14B are diagrams showing one step of the method for manufacturing the laminate and the method for manufacturing the electronic device, subsequent to FIG. 13; FIG. 14A and 14B are diagrams showing one step of the method for manufacturing the laminate and the method for manufacturing the electronic device, subsequent to FIG. 14; 15A and 15B are diagrams showing one step of the method for manufacturing the laminate and the method for manufacturing the electronic device, following FIG. 15; 16A and 16B are diagrams showing one step of the method for manufacturing the laminate and the method for manufacturing the electronic device, subsequent to FIG. 16; (A) is a comparative example, and (B) is a diagram showing an example of a rewiring layer manufactured by a manufacturing method in an example.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings below, in order to make each configuration easy to understand, some parts are emphasized or some parts are simplified, and the actual structure, shape, scale, etc. may differ.

FIG. 1 is a flow chart showing an example of a method for manufacturing a laminate and a method for manufacturing an electronic device according to an embodiment. In this embodiment, an electronic device is manufactured by a so-called fan-out PLP technique. As shown in FIG. 1, the laminate manufacturing method and the electronic device manufacturing method according to the embodiment include a separation layer forming step S01, an adhesive layer forming step S02, a protective layer forming step S03, and a rewiring layer forming step It includes S04, a substrate forming step S05, a mold polishing step S06, a separation layer deterioration step S07, a glass support peeling step S08, and an adhesive layer removing step S09.

3 to 11 are diagrams showing an example of steps in the method for manufacturing a laminate and the method for manufacturing an electronic device according to the embodiment. 3 to 11, the directions in the drawings will be explained using the XYZ coordinate system. In this XYZ coordinate system, the plane of the glass support that is parallel to the separation layer forming surface on which the separation layer is formed is defined as the XY plane. A direction parallel to the XY plane (for example, the lateral direction of the glass support) is referred to as the X direction, and a direction perpendicular to the X direction (eg, the longitudinal direction of the glass support) is referred to as the Y direction. Also, the direction perpendicular to the XY plane is referred to as the Z direction. That is, the normal direction of the separation layer forming surface is the Z direction. For each of the X direction, Y direction, and Z direction, the direction of the arrow in the drawing is the + direction, and the direction opposite to the direction of the arrow is the - direction.

<Separation layer forming step>
In the separation layer forming step S01, for example, as shown in FIG. 3A, the separation layer 20 is formed on the separation layer formation surface 10f of the rectangular glass support 10, for example. In the separation layer forming step S01, for example, the glass support 10 is held on a stage (not shown), and a liquid material for forming the separation layer 20 is discharged from a slit nozzle or the like onto the separation layer forming surface 10f of the glass support 10. . In this state, the stage and the slit nozzle are relatively moved to form the separation layer 20 on the glass support 10, thereby forming the laminate 100. FIG. The glass support 10 is, for example, a glass plate having a thickness of 500 μm or more and 2000 μm or less. flatness is maintained. The method of applying the liquid for forming the separation layer 20 is not particularly limited, but for example, application by spin coating, dipping, roller blade, doctor blade, spray, slit nozzle, ink jet, etc. law, etc. Alternatively, the liquid material for forming the separation layer 20 may be applied on the glass support 10 and then dried by heating or the like.

The separation layer 20 is made of, for example, a material that changes in quality by absorbing light. In the present embodiment, degeneration of the separation layer 20 refers to a state in which the separation layer 20 can be destroyed by receiving a slight external force, or a state in which the adhesive force between the separation layer 20 and a layer in contact with the separation layer 20 is reduced. The separation layer 20 absorbs light and changes properties, so that the strength or adhesiveness to the glass support 10 is lowered compared to before the change. Therefore, the degraded separation layer 20 is broken or peeled off from the glass support 10 by applying a slight external force (for example, by lifting the glass support 10).

The degeneration of the separation layer 20 is caused by (exothermic or non-exothermic) decomposition, cross-linking, change in steric configuration, or dissociation of functional groups due to the energy of the absorbed light (and accompanying curing, degassing, contraction or expansion), and the like. Alteration of the separation layer 20 occurs as a result of absorption of light by the material forming the separation layer 20 . Therefore, the type of alteration of the separation layer 20 can change according to the type of material forming the separation layer 20 . Moreover, the separation layer 20 is not limited to a material that changes in quality by absorbing light. For example, it may be a material that is denatured by absorbing heat applied without using light, or a material that is denatured by other solvents or the like.

The thickness of the separation layer 20 is, for example, more preferably 0.05 μm to 50 μm, more preferably 0.3 μm to 1.0 μm. If the thickness of the separation layer 20 is within the range of 0.05 μm to 50 μm, it can be removed by short-time light irradiation, low-energy light irradiation, short-time heating, or short-time immersion in a solvent. , can cause the separation layer 20 to undergo a desired alteration. Moreover, it is particularly preferable that the thickness of the separation layer 20 is within the range of 1 μm or less from the viewpoint of productivity.

The separation layer 20 that changes in quality due to the energy of the absorbed light will be described below. The separation layer 20 is preferably formed only from a material having a light-absorbing structure. An isolation layer 20 may be formed. In addition, the separation layer 20 preferably has a flat surface (no unevenness is formed) on the side facing the adhesive layer 30, which will be described later. It is possible to precisely form the metal layer 70 (rewiring layer 71) formed thereon.

The separation layer 20 may change in quality by absorbing light irradiated from a laser. That is, the light with which the separation layer 20 is irradiated to alter the properties of the separation layer 20 may be the light irradiated from a laser. Examples of lasers that emit light to irradiate the separation layer 20 include YAG lasers, ruby lasers, glass lasers, _YVO4 lasers, LD lasers, solid-state lasers such as fiber lasers, liquid lasers such as dye lasers, _CO2 lasers, Examples include gas lasers such as excimer lasers, Ar lasers, and He--Ne lasers, laser light such as semiconductor lasers and free electron lasers, and non-laser light. The laser that emits the light to irradiate the separation layer 20 can be appropriately selected according to the material that constitutes the separation layer 20, and emits light of a wavelength capable of altering the material that constitutes the separation layer 20. It is only necessary to select a laser that

(fluorocarbon)
Separating layer 20 may consist of a fluorocarbon. Since the separation layer 20 is composed of fluorocarbon, it is changed in quality by absorbing light, and as a result, it loses its strength or adhesiveness before being irradiated with light. Therefore, by applying a slight external force (for example, by lifting the glass support 10), the separation layer 20 is broken and the glass support 10 and the substrate 80 can be easily separated. The fluorocarbon that constitutes the separation layer 20 can be suitably deposited by plasma CVD (chemical vapor deposition).

Fluorocarbons absorb light with a range of wavelengths unique to their type. By irradiating the separation layer with light having a wavelength in the range absorbed by the fluorocarbon used in the separation layer 20, the fluorocarbon can be degraded appropriately. It is preferable that the absorption rate of light in the separation layer 20 is 80% or more.

The light with which the separation layer 20 is irradiated is, for example, YAG laser, ruby laser, glass laser, YVO4 laser, LD laser, solid laser such as fiber laser, or liquid laser such as dye laser, depending on the wavelength that can be absorbed by the fluorocarbon. A gas laser such as a CO ₂ laser, an excimer laser, an Ar laser, or a He--Ne laser, a laser beam such as a semiconductor laser, a free electron laser, or a non-laser beam may be used as appropriate. The wavelength capable of altering the fluorocarbon is not limited to this, but for example, a wavelength in the range of 600 nm or less can be used.

(Polymers containing light-absorbing structures in their repeating units)
The separation layer 20 may contain a polymer containing a light-absorbing structure in its repeating unit. The polymer undergoes denaturation upon exposure to light. The alteration of the polymer occurs when the structure absorbs the irradiated light. The separation layer 20 has lost its strength or adhesiveness prior to exposure to light as a result of polymer alteration. Therefore, by applying a slight external force (for example, by lifting the glass support 10), the separation layer 20 is broken and the glass support 10 and the substrate 80 can be easily separated.

The light-absorbing structure is a chemical structure that absorbs light and modifies the polymer containing the structure as a repeating unit. The structure is, for example, a group containing a conjugated pi-electron system consisting of a substituted or unsubstituted benzene ring, condensed ring, or heterocyclic ring. More specifically, the structure can be a cardo structure, or a benzophenone structure, diphenylsulfoxide structure, diphenylsulfone structure (bisphenylsulfone structure), diphenyl structure or diphenylamine structure present in the side chain of the polymer.

When the structure is present in the side chain of the polymer, the structure can be represented by the formula below.

(wherein each R is independently an alkyl group, an aryl group, a halogen, a hydroxyl group, a ketone group, a sulfoxide group, a sulfone group, or an N(R ¹ )(R ² ) group (wherein R ¹ and R ² are each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms), Z is absent or -CO-, -SO ₂ -, -SO- or -NH-, n is an integer from 0 or 1 to 5.)
In addition, the polymer includes, for example, repeating units represented by any one of (a) to (d) in the following formulas, represented by (e), or represented by (f) contains the structure in its backbone.

(Wherein, l is an integer of 1 or more, m is an integer of 0 or 1 to 2, and X is any of the formulas shown in the above chemical formulas [Formula 1] in (a) to (e) and in (f) any of the formulas shown in [Chemical Formula 1] above, or absent, and Y ₁ and Y ₂ are each independently —CO— or —SO ₂ — . l is preferably an integer of 10 or less.)
Examples of the benzene ring, condensed ring and heterocyclic ring represented by the above chemical formula [Formula 1] include phenyl, substituted phenyl, benzyl, substituted benzyl, naphthalene, substituted naphthalene, anthracene, substituted anthracene, anthraquinone, substituted anthraquinone, acridine, Substituted acridines, azobenzenes, substituted azobenzenes, fluorenes, substituted fluorenes, fluorenones, substituted fluorylenenes, carbazoles, substituted carbazoles, N-alkylcarbazoles, dibenzofurans, substituted dibenzofurans, phenanthrenes, substituted phenanthrenes, pyrenes and substituted pyrenes. When the exemplified substituents further have substituents, the substituents are, for example, alkyl, aryl, halogen atom, alkoxy, nitro, aldehyde, cyano, amide, dialkylamino, sulfonamide, imide, carboxylic acid, It is selected from carboxylic acid esters, sulfonic acids, sulfonic acid esters, alkylamino and arylamino.

Among the substituents represented by the above chemical formula [Chemical Formula 1], examples of the fifth substituent having two phenyl groups and Z being —SO ₂ — include bis(2 ,4-dihydroxyphenyl)sulfone, bis(3,4-dihydroxyphenyl)sulfone, bis(3,5-dihydroxyphenyl)sulfone, bis(3,6-dihydroxyphenyl)sulfone, bis(4-hydroxyphenyl)sulfone, bis(3-hydroxyphenyl)sulfone, bis(2-hydroxyphenyl)sulfone, bis(3,5-dimethyl-4-hydroxyphenyl)sulfone and the like.

Among the substituents represented by the above chemical formula [Chemical Formula 1], examples of the fifth substituent having two phenyl groups and Z being —SO— include bis(2, 3-dihydroxyphenyl) sulfoxide, bis(5-chloro-2,3-dihydroxyphenyl) sulfoxide, bis(2,4-dihydroxyphenyl) sulfoxide, bis(2,4-dihydroxy-6-methylphenyl) sulfoxide, bis( 5-chloro-2,4-dihydroxyphenyl)sulfoxide, bis(2,5-dihydroxyphenyl)sulfoxide, bis(3,4-dihydroxyphenyl)sulfoxide, bis(3,5-dihydroxyphenyl)sulfoxide, bis(2, 3,4-trihydroxyphenyl)sulfoxide, bis(2,3,4-trihydroxy-6-methylphenyl)-sulfoxide, bis(5-chloro-2,3,4-trihydroxyphenyl)sulfoxide, bis(2 ,4,6-trihydroxyphenyl)sulfoxide, bis(5-chloro-2,4,6-trihydroxyphenyl)sulfoxide and the like.

Among the substituents represented by the above chemical formula [Formula 1], examples of the fifth substituent having two phenyl groups and Z being -C(=O)- include: 2,4-dihydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,2′,4,4′-tetrahydroxybenzophenone, 2,2′,5,6′-tetrahydroxybenzophenone, 2-hydroxy-4 -methoxybenzophenone, 2-hydroxy-4-octoxybenzophenone, 2-hydroxy-4-dodecyloxybenzophenone, 2,2'-dihydroxy-4-methoxybenzophenone, 2,6-dihydroxy-4-methoxybenzophenone, 2,2 '-dihydroxy-4,4'-dimethoxybenzophenone, 4-amino-2'-hydroxybenzophenone, 4-dimethylamino-2'-hydroxybenzophenone, 4-diethylamino-2'-hydroxybenzophenone, 4-dimethylamino-4' -methoxy-2'-hydroxybenzophenone, 4-dimethylamino-2',4'-dihydroxybenzophenone, and 4-dimethylamino-3',4'-dihydroxybenzophenone.

When the structure is present in the side chain of the polymer, the proportion of the repeating unit containing the structure in the polymer is such that the light transmittance of the separation layer 20 is 0.001% or more and 10%. % or less. If the polymer is prepared so that the ratio falls within such a range, the separation layer 20 can sufficiently absorb light and deteriorate reliably and quickly. That is, the glass support 10 can be easily removed from the substrate 80, and the light irradiation time required for the removal can be shortened.

The structure can absorb light having a desired range of wavelengths by selection of its type. For example, the wavelength of light that can be absorbed by the structure is more preferably in the range of 100 nm or more and 2,000 nm or less. Within this range, the wavelength of light that can be absorbed by the structure is on the shorter wavelength side, for example, within the range of 100 nm or more and 500 nm or less. For example, the structure can alter the polymer containing the structure by absorbing ultraviolet light, preferably having a wavelength in the range of approximately 300 nm to 370 nm.

Light that can be absorbed by the structure is, for example, a high-pressure mercury lamp (wavelength: 254 nm or more and 436 nm or less), KrF excimer laser (wavelength: 248 nm), ArF excimer laser (wavelength: 193 nm), F2 excimer laser (wavelength: 157 nm). , XeCl laser (wavelength: 308 nm), XeF laser (wavelength: 351 nm) or light emitted from a solid-state UV laser (wavelength: 355 nm), or g-line (wavelength: 436 nm), h-line (wavelength: 405 nm) or i-line ( wavelength: 365 nm).

Although the separation layer 20 described above contains a polymer having the above structure as a repeating unit, the separation layer 20 may further contain components other than the above polymer. Examples of such components include fillers, plasticizers, and components capable of improving the peelability of the glass support 10 . These components are appropriately selected from conventionally known substances or materials that do not interfere with or promote the absorption of light by the structure and the deterioration of the polymer.

(inorganic matter)
Separation layer 20 may be made of an inorganic material. Since the separation layer 20 is composed of an inorganic substance, it is changed in quality by absorbing light, and as a result, it loses strength or adhesiveness before being irradiated with light. Therefore, by applying a slight external force (for example, by lifting the glass support 10), the separation layer 20 is broken and the glass support 10 and the substrate 80 can be easily separated.

The above-mentioned inorganic substance may be of any structure as long as it changes in quality by absorbing light, and for example, one or more inorganic substances selected from the group consisting of metals, metal compounds and carbon can be preferably used. A metal compound refers to a compound containing metal atoms, and can be, for example, a metal oxide, a metal nitride. Examples of such inorganics include, but are not limited to, gold, silver, copper, iron, nickel, aluminum, titanium, chromium, _SiO2 , SiN, _Si3N4 , _TiN , and carbon. One or more inorganic substances selected from the group consisting of Note that carbon is a concept that can include allotropes of carbon, such as diamond, fullerene, diamond-like carbon, and carbon nanotubes.

The above inorganic substances absorb light having wavelengths within a specific range depending on the type thereof. By irradiating the separation layer with light having a wavelength within a range absorbed by the inorganic substance used in the separation layer 20, the inorganic substance can be suitably altered.

The light to be irradiated to the separation layer 20 made of an inorganic substance includes, for example, YAG laser, ruby laser, glass laser, YVO ₄ laser, LD laser, solid laser such as fiber laser, dye Liquid lasers such as lasers, gas lasers such as CO ₂ lasers, excimer lasers, Ar lasers and He--Ne lasers, laser beams such as semiconductor lasers and free electron lasers, or non-laser beams may be used as appropriate.

The inorganic separation layer 20 can be formed on the glass support 10 by known techniques such as sputtering, chemical vapor deposition (CVD), plating, plasma CVD, spin coating, and the like. The thickness of the separation layer 20 made of an inorganic material is not particularly limited as long as it can sufficiently absorb the light used. is more preferred. In addition, an inorganic film (for example, a metal film) made of an inorganic substance that constitutes the separation layer 20 may be coated with an adhesive in advance on one or both sides thereof, and attached to the glass support 10 and the substrate 80 .

When a metal film is used as the separation layer 20, laser reflection, charging of the film, etc. may occur depending on conditions such as the film quality of the separation layer 20, the type of laser light source, and the laser output. Therefore, it is preferable to provide an antireflection film or an antistatic film above or below the separation layer 20 or either one of them to take measures against them.

(Compound having an infrared absorbing structure)
Separation layer 20 may be formed of a compound having an infrared absorbing structure. The compound changes in quality by absorbing infrared rays. The separation layer 20 has lost its strength or adhesiveness before being irradiated with infrared rays as a result of the deterioration of the compound. Therefore, by applying a slight external force (for example, by lifting the support), the separation layer 20 is broken and the glass support 10 and the substrate 80 can be easily separated.

Structures having infrared absorption properties or compounds containing structures having infrared absorption properties include, for example, alkanes, alkenes (vinyl, trans, cis, vinylidene, trisubstituted, tetrasubstituted, conjugated, cumulene, cyclic), alkynes (monosubstituted, disubstituted), monocyclic aromatics (benzene, monosubstituted, disubstituted, trisubstituted), alcohols and phenols (free OH, intramolecular hydrogen bonds, intermolecular hydrogen bonds, saturated secondary, saturated tertiary, unsaturated secondary, unsaturated tertiary), acetals, ketals, aliphatic ethers, aromatic ethers, vinyl ethers, oxirane ring ethers, peroxide ethers, ketones, dialkylcarbonyls, aromatic carbonyls, enols of 1,3-diketones, o-hydroxyaryl ketones, dialkylaldehydes, aromatic aldehydes, carboxylic acids (dimers, carboxylate anions), formates, acetates, conjugated esters, non-conjugated esters, aromatic esters, lactones (β-, γ-, δ-), aliphatic acid chlorides, aromatic acid chlorides, acid anhydrides (conjugated, non-conjugated, cyclic, acyclic), primary amides, Secondary amides, lactams, primary amines (aliphatic, aromatic), secondary amines (aliphatic, aromatic), tertiary amines (aliphatic, aromatic), primary amine salts, tertiary Secondary amine salts, tertiary amine salts, ammonium ions, aliphatic nitriles, aromatic nitriles, carbodiimides, aliphatic isonitriles, aromatic isonitriles, isocyanates, thiocyanates, aliphatic isothiocyanates, aromatic isothiocyanates Esters, aliphatic nitro compounds, aromatic nitro compounds, nitroamines, nitrosamines, nitrate esters, nitrite esters, nitroso bonds (aliphatic, aromatic, monomeric, dimer), mercaptans, thiophenols and thiolic acids, etc. Sulfur compounds, thiocarbonyl groups, sulfoxides, sulfones, sulfonyl chlorides, primary sulfonamides, secondary sulfonamides, sulfate esters, carbon-halogen bonds, Si—A ¹ bonds (A ¹ is H, C, O or halogen), a PA ² bond (A ² is H, C or O), or a Ti—O bond.

Examples of structures containing a carbon-halogen bond include -CH ₂ Cl, -CH ₂ Br, -CH ₂ I, -CF ₂ -, -CF ₃ , -CH=CF ₂ , -CF=CF ₂ , fluorine aryl chloride, aryl chloride, and the like.

Structures containing the Si—A ¹ bond include SiH, SiH ₂ , SiH ₃ , Si—CH ₃ , Si—CH ₂ —, Si—C ₆ H ₅ , SiO—aliphatic, Si—OCH ₃ , Si— OCH ₂ CH ₃ , Si—OC ₆ H ₅ , Si—O—Si, Si—OH, SiF, SiF ₂ , SiF ₃ and the like. As the structure containing the Si—A ¹ bond, it is particularly preferable to form a siloxane skeleton and a silsesquioxane skeleton.

Structures containing the above PA ² bond include PH, PH ₂ , P—CH ₃ , P—CH ₂ —, P—C ₆ H ₅ , A ₃₃ —P ^{—O (A 3 is} aliphatic or aromatic group), (A ⁴ O) ₃ -P—O (A ⁴ is alkyl), P—OCH ₃ , P—OCH ₂ CH ₃ , P—OC ₆ H ₅ , P—O—P, P—OH, and Examples include O=P-OH.

The structure can absorb infrared radiation having a desired range of wavelengths by selection of its type. Specifically, the wavelength of infrared rays that can be absorbed by the structure is, for example, in the range of 1 μm or more and 20 μm or less, and more preferably in the range of 2 μm or more and 15 μm or less. Furthermore, when the structure is Si--O bond, Si--C bond and Ti--O bond, it may be in the range of 9 μm or more and 11 μm or less. A person skilled in the art can easily understand the infrared wavelengths that each structure can absorb. For example, as an absorption band in each structure, non-patent literature: "Identification method by spectrum of organic compounds (5th edition) -Combination of MS, IR, NMR and UV-" by SILVERSTEIN/BASSLER/MORRILL (published in 1992) No. The description on pages 146 to 151 can be referred to.

As the compound having an infrared-absorbing structure, which is used for forming the separation layer 20, among the compounds having the structure as described above, compounds that can be dissolved in a solvent for coating and solidified by solidification are used. It is not particularly limited as long as it can form a layer. However, in order to effectively alter the compound in the separation layer 20 and facilitate the separation between the glass support 10 and the substrate 80, the separation layer 20 should have a high absorption of infrared rays. It is preferable that the transmittance of infrared rays when irradiated is low. Specifically, the infrared transmittance of the separation layer 20 is preferably lower than 90%, and more preferably lower than 80%.

To give an example, the compound having a siloxane skeleton is, for example, a copolymer of a repeating unit represented by the following chemical formula [Chem. 3] and a repeating unit represented by the following chemical formula [Chem. 4]. A certain resin or a resin that is a copolymer of a repeating unit represented by the following chemical formula [Formula 4] and a repeating unit derived from an acrylic compound can be used.

(In the above chemical formula [Formula 4], R ³ is hydrogen, an alkyl group having 10 or less carbon atoms, or an alkoxy group having 10 or less carbon atoms.)
Among them, as a compound having a siloxane skeleton, t-butyl styrene (TBST), which is a copolymer of repeating units represented by the above chemical formula [Chem. 3] and repeating units represented by the following chemical formula [Chem. 5] - A dimethylsiloxane copolymer is more preferable, and a TBST-dimethylsiloxane copolymer containing a repeating unit represented by the above chemical formula [Chemical 3] and a repeating unit represented by the following chemical formula [Chemical 5] at a ratio of 1:1. Coalescing is even more preferred.

Further, as the compound having a silsesquioxane skeleton, for example, a resin that is a copolymer of a repeating unit represented by the following chemical formula [Chemical 6] and a repeating unit represented by the following chemical formula [Chemical 7] is used. can be used.

(In the above chemical formula [Chemical 6], R ⁴ is hydrogen or an alkyl group having 1 or more and 10 or less carbon atoms, and in the above chemical formula [Chemical 7], R ⁵ is a an alkyl group or a phenyl group.)
In addition, as compounds having a silsesquioxane skeleton, JP-A-2007-258663 (published on October 4, 2007), JP-A-2010-120901 (published on June 3, 2010), Suitable use of each silsesquioxane resin disclosed in JP-A-2009-263316 (published November 12, 2009) and JP-A-2009-263596 (published November 12, 2009) can be done.

Among them, the compound having a silsesquioxane skeleton is more preferably a copolymer of a repeating unit represented by the following chemical formula [Chemical 8] and a repeating unit represented by the following chemical formula [Chemical 9]. A copolymer containing repeating units represented by the chemical formula [Chem. 8] and repeating units represented by the following chemical formula [Chem. 9] in a range of 5:5 to 9:1 (for example, 7:3) is more preferable.

A polymer having a silsesquioxane skeleton may have a random structure, a ladder structure, or a cage structure, and may have any structure.

Examples of compounds containing a Ti—O bond include (i) tetra-i-propoxytitanium, tetra-n-butoxytitanium, tetrakis(2-ethylhexyloxy)titanium, and titanium-i-propoxyoctylene glycolate. (ii) chelate titanium such as di-i-propoxy bis(acetylacetonato)titanium and propanedioxytitanium bis(ethylacetoacetate); (iii) iC ₃ H ₇ O-[- Ti(Oi-C ₃ H ₇ ) ₂ -O-] _n -i-C ₃ H ₇ and nC ₄ H ₉ O-[-Ti(O-n-C ₄ H ₉ ) ₂ -O -] titanium polymers such as _n - _nC4H9 ; ( _iv ) tri-n-butoxy titanium monostearate, titanium stearate, di-i-propoxy titanium diisostearate, and (2-n-butoxy (v) water-soluble titanium compounds such as di-n-butoxy-bis(triethanolamineto)titanium;

Among them, as a compound containing a Ti—O bond, di-n-butoxy bis(triethanolamineto)titanium (Ti(OC ₄ H ₉ ) ₂ [OC ₂ H ₄ N(C ₂ H ₄ OH) ₂ ] ₂ ) is preferred.

Although the separation layer 20 described above contains a compound having an infrared absorbing structure, the separation layer 20 may further contain components other than the above compounds. Examples of such components include fillers, plasticizers, and components capable of improving the peelability of the glass support 10 . These components are appropriately selected from conventionally known substances or materials that do not interfere with or promote the absorption of infrared rays by the structure described above and the alteration of the compound.

(Infrared absorbing substance)
Separation layer 20 may contain an infrared absorbing substance. Since the separation layer 20 contains an infrared-absorbing substance, it is changed in quality by absorbing light, and as a result, it loses its strength or adhesiveness before being irradiated with light. Therefore, by applying a slight external force (for example, by lifting the glass support 10), the separation layer 20 is broken and the glass support 10 and the substrate 80 can be easily separated.

The infrared-absorbing substance may have a structure that changes in quality by absorbing infrared rays, and for example, carbon black, iron particles, or aluminum particles can be preferably used. Infrared absorbing substances absorb light having wavelengths in a range unique to their type. By irradiating the separation layer 20 with light having a wavelength in a range absorbed by the infrared absorbing substance used in the separation layer 20, the infrared absorbing substance can be degraded appropriately.

<Adhesive Layer Forming Step>
The adhesive layer forming step S02 is performed after the separation layer forming step S01. In the adhesive layer forming step S02, for example, as shown in FIG. An adhesive layer 30 is formed as follows. The adhesive layer 30 is formed on the separation layer 20 in the adhesive layer forming step S02.

In the adhesive layer forming step S02, for example, similarly to the separation layer forming step S01, the glass support 10 is held on a stage (not shown), and the adhesive layer 30 is applied from a slit nozzle or the like toward the adhesive layer forming surface 20f of the separation layer 20. A liquid material for forming is discharged. By relatively moving the stage and the slit nozzle in this state, the adhesive layer 30 is formed on the separation layer 20 . The adhesive layer 30 is preferably formed to have a thickness of, for example, 1 μm or more and 100 μm or less.

(Production example of adhesive layer)
In the adhesive layer forming step S<b>02 , the separation layer 20 may be coated with a liquid containing an adhesive, or an adhesive tape having both sides coated with an adhesive may be attached to the separation layer 20 . The method of applying the adhesive is not particularly limited, and examples thereof include a spin coating method, a dipping method, a roller blade method, a doctor blade method, a spray method, a slit nozzle method, an ink jet method, and the like. Alternatively, the adhesive may be applied on the separation layer 20 and then dried by heating or the like. As the adhesive, various adhesives known in the art can be used, such as acrylic, novolak, naphthoquinone, hydrocarbon, polyimide, and elastomer.

The resin contained in the adhesive layer 30 may be any one having adhesiveness, and examples thereof include hydrocarbon resins, acrylic-styrene resins, maleimide resins, elastomer resins, or combinations thereof. mentioned.

The melting point of the adhesive varies depending on the type and molecular weight of the resin, and the blending of plasticizers and the like in the adhesive. The type and molecular weight of the resin contained in the adhesive can be appropriately selected according to the type of the substrate and support. Inside is preferred. When the melting point of the resin used for the adhesive is in the range of 50° C. or higher and 300° C. or lower, the fluidity of the adhesive layer during heating can be suppressed. Also, the melting point of the adhesive layer 30 may be appropriately adjusted by blending a plasticizer, a resin with a low degree of polymerization, or the like. The melting point can be measured, for example, using a known differential scanning calorimeter (DSC).

(hydrocarbon resin)
A hydrocarbon resin is a resin having a hydrocarbon skeleton and formed by polymerizing a monomer composition. As the hydrocarbon resin, a cycloolefin-based polymer (hereinafter sometimes referred to as "resin (A)"), and at least one resin selected from the group consisting of terpene resins, rosin-based resins and petroleum resins (hereinafter referred to as " (sometimes referred to as "resin (B)"), but is not limited thereto.

The resin (A) may be a resin obtained by polymerizing a monomer component containing a cycloolefin monomer. Specific examples include ring-opening (co)polymers of monomer components containing cycloolefin monomers, and resins obtained by addition (co)polymerization of monomer components containing cycloolefin monomers.

Examples of the cycloolefin-based monomer contained in the monomer component constituting the resin (A) include bicyclics such as norbornene and norbornadiene; tricyclics such as dicyclopentadiene and dihydroxypentadiene; and tetracyclododecene. tetracyclics, pentacyclics such as cyclopentadiene trimer, heptacyclics such as tetracyclopentadiene, or these polycyclic alkyl (methyl, ethyl, propyl, butyl, etc.) substituted products, alkenyl (vinyl, etc.) Substituted products, alkylidene (ethylidene etc.) substituted products, aryl (phenyl, tolyl, naphthyl etc.) substituted products and the like can be mentioned. Among these, norbornene-based monomers selected from the group consisting of norbornene, tetracyclododecene, and alkyl-substituted products thereof are particularly preferred.

The monomer component constituting the resin (A) may contain other monomers copolymerizable with the cycloolefin-based monomers described above, and preferably contains, for example, alkene monomers. Alkene monomers include, for example, ethylene, propylene, 1-butene, isobutene, 1-hexene, α-olefins, and the like. Alkene monomers may be linear or branched.

Moreover, it is preferable to contain a cycloolefin monomer as a monomer component constituting the resin (A) from the viewpoint of high heat resistance (low thermal decomposition and thermal weight loss). The ratio of the cycloolefin monomer to the total monomer components constituting the resin (A) is preferably 5 mol% or more, more preferably 10 mol% or more, and further preferably 20 mol% or more. preferable. In addition, the ratio of the cycloolefin monomer to the total monomer components constituting the resin (A) is not particularly limited, but from the viewpoint of solubility and stability over time in a solution, it is preferably 80 mol% or less. It is more preferably 70 mol % or less.

Moreover, a linear or branched alkene monomer may be contained as a monomer component constituting the resin (A). The ratio of the alkene monomer to the total monomer components constituting the resin (A) is preferably 10 to 90 mol%, more preferably 20 to 85 mol%, from the viewpoint of solubility and flexibility. , 30 to 80 mol %.

The resin (A) is, for example, a resin having no polar group, such as a resin obtained by polymerizing a monomer component consisting of a cycloolefin monomer and an alkene monomer. is preferable for suppressing the generation of gas.

The polymerization method, polymerization conditions, and the like for polymerizing the monomer components are not particularly limited, and may be appropriately set according to conventional methods.

Examples of commercially available products that can be used as the resin (A) include "TOPAS" manufactured by Polyplastics Co., Ltd., "APEL" manufactured by Mitsui Chemicals, Inc., and "ZEONOR" and "ZEONEX" manufactured by Nippon Zeon Co., Ltd. , and "ARTON" manufactured by JSR Corporation.

The resin (B) is at least one resin selected from the group consisting of terpene-based resins, rosin-based resins and petroleum resins. Specifically, terpene-based resins include, for example, terpene resins, terpene phenol resins, modified terpene resins, hydrogenated terpene resins, and hydrogenated terpene phenol resins. Examples of rosin-based resins include rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, and modified rosin. Examples of petroleum resins include aliphatic or aromatic petroleum resins, hydrogenated petroleum resins, modified petroleum resins, alicyclic petroleum resins, and coumarone-indene petroleum resins. Among these, hydrogenated terpene resins and hydrogenated petroleum resins are more preferred.

Although the weight average molecular weight of resin (B) is not particularly limited, it is preferably from 300 to 3,000. When the weight average molecular weight of the resin (B) is 300 or more, the heat resistance is sufficient, and the amount of degassing is reduced in a high temperature environment. On the other hand, when the weight average molecular weight of the resin (B) is 3,000 or less, the peeling speed when peeling the laminate is favorable. The weight average molecular weight of the resin (B) in the present embodiment means the polystyrene-equivalent molecular weight measured by gel permeation chromatography (GPC).

As the resin, a mixture of the resin (A) and the resin (B) may be used. By mixing, good heat resistance and peeling speed can be obtained. For example, the mixing ratio of resin (A) and resin (B) is (A):(B) = 80:20 to 55:45 (mass ratio). It is preferable because it is excellent in durability and flexibility.

(acrylic-styrene resin)
Examples of acrylic-styrene resins include resins obtained by polymerizing styrene or styrene derivatives and (meth)acrylic acid esters as monomers.

Examples of (meth)acrylic acid esters include (meth)acrylic acid alkyl esters having a chain structure, (meth)acrylic acid esters having an aliphatic ring, and (meth)acrylic acid esters having an aromatic ring. . Examples of (meth)acrylic acid alkyl esters having a chain structure include acrylic long-chain alkyl esters having an alkyl group of 15 to 20 carbon atoms, acrylic alkyl esters having an alkyl group of 1 to 14 carbon atoms, and the like. . Examples of acrylic long-chain alkyl esters include those of acrylic acid or methacrylic acid in which the alkyl group is n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, or the like. Alkyl esters are mentioned. In addition, the said alkyl group may be branched.

Examples of acrylic alkyl esters having an alkyl group having 1 to 14 carbon atoms include known acrylic alkyl esters used in existing acrylic adhesives. For example, alkyl acrylic acid or methacrylic acid in which the alkyl group is a methyl group, an ethyl group, a propyl group, a butyl group, a 2-ethylhexyl group, an isooctyl group, an isononyl group, an isodecyl group, a dodecyl group, a lauryl group, a tridecyl group, or the like. esters.

(Meth)acrylates having an aliphatic ring include cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, 1-adamantyl (meth)acrylate, norbornyl (meth)acrylate, isobornyl (meth)acrylate, tricyclodecanyl (Meth)acrylate, tetracyclododecanyl (meth)acrylate, dicyclopentanyl (meth)acrylate and the like can be mentioned, and isobornyl methacrylate and dicyclopentanyl (meth)acrylate are more preferable.

The (meth)acrylic acid ester having an aromatic ring is not particularly limited, but examples of the aromatic ring include a phenyl group, a benzyl group, a tolyl group, a xylyl group, a biphenyl group, a naphthyl group, and an anthracenyl group. , a phenoxymethyl group, a phenoxyethyl group, and the like. Moreover, the aromatic ring may have a chain or branched alkyl group having 1 to 5 carbon atoms. Specifically, phenoxyethyl acrylate is preferred.

(maleimide resin)
Examples of maleimide resins include monomers such as N-methylmaleimide, N-ethylmaleimide, Nn-propylmaleimide, N-isopropylmaleimide, Nn-butylmaleimide, N-isobutylmaleimide, N-sec -butylmaleimide, N-tert-butylmaleimide, Nn-pentylmaleimide, Nn-hexylmaleimide, Nn-heptylmaleimide, Nn-octylmaleimide, N-laurylmaleimide, N-stearylmaleimide, etc. Maleimide having an aliphatic hydrocarbon group such as maleimide, N-cyclopropylmaleimide, N-cyclobutylmaleimide, N-cyclopentylmaleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide having an alkyl group of , N-phenylmaleimide, Nm-methylphenylmaleimide, No-methylphenylmaleimide, Np-methylphenylmaleimide and the like resins obtained by polymerizing aromatic maleimides having aryl groups such as .

For example, a cycloolefin copolymer, which is a copolymer of a repeating unit represented by the following chemical formula [Chem. 10] and a repeating unit represented by the following chemical formula [Chem. 11], can be used as the adhesive component resin.

(In the above chemical formula [Formula 11], n is an integer of 0 or 1 to 3.)
As such a cycloolefin copolymer, APL 8008T, APL 8009T, and APL 6013T (all manufactured by Mitsui Chemicals, Inc.) and the like can be used.

(elastomer)
The elastomer preferably contains a styrene unit as a structural unit of the main chain, and the "styrene unit" may have a substituent. Examples of substituents include alkyl groups having 1 to 5 carbon atoms, alkoxy groups having 1 to 5 carbon atoms, alkoxyalkyl groups having 1 to 5 carbon atoms, acetoxy groups, and carboxyl groups. Moreover, it is more preferable that the content of the styrene unit is in the range of 14% by weight or more and 50% by weight or less. Furthermore, the elastomer preferably has a weight average molecular weight within the range of 10,000 or more and 200,000 or less.

If the styrene unit content is in the range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, the hydrocarbon solvent described later is used. , the adhesive layer 30 can be removed more easily and quickly. In addition, since the styrene unit content and weight average molecular weight are within the above ranges, resist solvents (such as PGMEA, PGME, etc.) and acids (hydrogen fluoride acid, etc.) and alkali (TMAH, etc.).

The elastomer may be further mixed with the above-mentioned (meth)acrylic acid ester.

Also, the content of styrene units is more preferably 17% by weight or more, and more preferably 40% by weight or less.

A more preferable range of the weight average molecular weight is 20,000 or more, and a more preferable range is 150,000 or less.

As the elastomer, various elastomers can be used as long as the content of styrene units is in the range of 14% by weight or more and 50% by weight or less and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less. can be used. For example, polystyrene-poly(ethylene/propylene) block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), styrene-butadiene-styrene block copolymer (SBS), styrene-butadiene-butylene-styrene block copolymer (SBBS). , and hydrogenated products thereof, styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (styrene-isoprene-styrene block copolymer) (SEPS), styrene-ethylene-ethylene- Propylene-styrene block copolymer (SEEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer in which the styrene block is reactively crosslinked (Septon V9461 (manufactured by Kuraray Co., Ltd.)), styrene block in which the styrene block is reactively crosslinked-styrene-ethylene-butylene- A styrene block copolymer (Septon V9827 (manufactured by Kuraray Co., Ltd.) having a reactive polystyrene-based hard block) or the like having a styrene unit content and a weight average molecular weight within the ranges described above can be used.

Among elastomers, hydrogenated products are more preferable. If it is a hydrogenated product, the stability against heat is improved, and deterioration such as decomposition or polymerization is less likely to occur. It is also more preferable from the viewpoint of solubility in hydrocarbon solvents and resistance to resist solvents.

Further, among elastomers, those having styrene block polymers at both ends are more preferable. This is because by blocking both ends with styrene, which has high thermal stability, higher heat resistance is exhibited.

More specifically, the elastomer is more preferably a hydrogenated block copolymer of styrene and a conjugated diene. Stability against heat is improved, and deterioration such as decomposition and polymerization hardly occurs. In addition, by blocking styrene, which has high thermal stability, at both ends, higher heat resistance is exhibited. Furthermore, it is more preferable from the viewpoint of solubility in hydrocarbon solvents and resistance to resist solvents.

Commercially available products that can be used as the elastomer contained in the adhesive constituting the adhesive layer 30 include, for example, "Septon (trade name)" manufactured by Kuraray Co., Ltd., "Hibler (trade name)" manufactured by Kuraray Co., Ltd., and Asahi Kasei Corporation. "Tuftech (trade name)" manufactured by JSR Corporation, "Dynaron (trade name)" manufactured by JSR Corporation, and the like.

The content of the elastomer contained in the adhesive constituting the adhesive layer 30 is preferably in the range of 50 parts by weight or more and 99 parts by weight or less, preferably 60 parts by weight or more, with the total amount of the adhesive composition being 100 parts by weight. , 99 parts by weight or less, and most preferably 70 parts by weight or more and 95 parts by weight or less. By setting the thickness within these ranges, the wafer and the support can be preferably bonded together while maintaining the heat resistance.

Also, the elastomer may be a mixture of multiple types. In other words, the adhesive that forms the adhesive layer 30 may contain multiple types of elastomers. At least one of the plurality of types of elastomers should contain a styrene unit as a structural unit of the main chain. At least one of the plurality of types of elastomer has a styrene unit content of 14% by weight or more and 50% by weight or less, or a weight average molecular weight of 10,000 or more and 200,000 or less. Anything within the range is within the scope of the present invention. In addition, when the adhesive constituting the adhesive layer 30 contains a plurality of types of elastomers, the content of styrene units may be adjusted to be within the above range as a result of mixing. For example, Septon 4033 of Septon (trade name) manufactured by Kuraray Co., Ltd. having a styrene unit content of 30% by weight and Septon 2063 of Septon (trade name) having a styrene unit content of 13% by weight at a weight ratio of 1 When mixed in pairs, the styrene content of the total elastomer contained in the adhesive is 21 to 22 weight percent, thus 14 weight percent or more. Further, for example, if a styrene unit content of 10% by weight and a styrene unit content of 60% by weight are mixed at a weight ratio of 1:1, the content is 35% by weight, which is within the above range. The present invention may take such a form. Most preferably, the plurality of types of elastomer contained in the adhesive that constitutes the adhesive layer 30 all contain styrene units within the above ranges and have weight average molecular weights within the above ranges.

Note that it is preferable to form the adhesive layer 30 using a resin other than a photocurable resin (for example, a UV curable resin). By using a resin other than the photocurable resin, it is possible to prevent residues from remaining around the minute unevenness of the glass support 10 after peeling or removing the adhesive layer 30 . In particular, the adhesive constituting the adhesive layer 30 is preferably one that dissolves in a specific solvent rather than one that dissolves in all solvents. This is because the adhesive layer 30 can be removed by dissolving it in a solvent without applying physical force to the substrate 80 . When removing the adhesive layer 30 , the adhesive layer 30 can be easily removed even from the substrate 80 whose strength is reduced without damaging or deforming the substrate 80 .

(dilution solvent)
Examples of the diluent solvent used when forming the adhesive layer 30 (and the separation layer 20) include linear hydrocarbons such as hexane, heptane, octane, nonane, methyloctane, decane, undecane, dodecane, and tridecane; Branched hydrocarbons having 4 to 15 carbon atoms, for example, cyclic hydrocarbons such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decahydronaphthalene, tetrahydronaphthalene, p-menthane, o-menthane, m-menthane, diphenylmenthane , 1,4-terpine, 1,8-terpine, bornane, norbornane, pinane, thujang, karan, longifolene, geraniol, nerol, linalool, citral, citronellol, menthol, isomenthol, neomenthol, α-terpineol, β-terpineol , γ-terpineol, terpinen-1-ol, terpinen-4-ol, dihydroterpinyl acetate, 1,4-cineol, 1,8-cineole, borneol, carvone, ionone, thujone, camphor, d-limonene, l - terpene solvents such as limonene and dipentene; lactones such as γ-butyrolactone; Polyhydric alcohols such as diethylene glycol, propylene glycol, and dipropylene glycol; compounds having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate; Derivatives of polyhydric alcohols such as monoalkyl ethers such as monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether, etc. of compounds having an ester bond, or compounds having an ether bond such as monophenyl ether (among these, propylene Glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME) are preferred); cyclic ethers such as dioxane, methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methoxybutyl acetate , methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate and other esters; Aromatic organic solvents such as anisole, ethylbenzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenetol, and butylphenyl ether can be used.

(other ingredients)
The adhesive that constitutes the adhesive layer 30 may further contain other miscible substances as long as the essential properties are not impaired. For example, various commonly used additives such as additional resins, plasticizers, adhesion aids, stabilizers, colorants, thermal polymerization inhibitors and surfactants for improving the performance of the adhesive can be further used. can.

<Protective layer forming step>
The protective layer forming step S03 is performed, for example, after the adhesive layer forming step S02. In the protective layer forming step S03, as shown in FIG. 4A, the side of the adhesive layer 30 on which the glass support 10 is not present, that is, the protective layer forming surface 30f of the adhesive layer 30 is coated with the adhesive layer 30 so as to be in contact with each other. A protective layer 40 is formed on the . The protective layer 40 is formed on the adhesive layer 30 in the protective layer forming step S03. In the protective layer forming step S03, the protective layer 40 is formed on the entire surface of the protective layer forming surface 30f of the adhesive layer 30 by a technique such as sputtering. In addition, the protective layer 40 can be formed by any method other than the sputtering method.

The protective layer 40 is used for forming a rewiring layer 71, which will be described later. By providing the protective layer 40, displacement of the rewiring layer is suppressed. The protective layer 40 is formed of a conductive or non-conductive metal layer. The protective layer 40 is made of metal containing one or both of Ti and Cu, for example. The protective layer 40 has a melting point of 300° C. or higher. Metals applicable to the protective layer 40 include silver (Ag), aluminum (Al), gold (Au), carbon (C), chromium (Cr), copper (Cu), iron (Fe), and titanium (Ti). , nickel (Ni), zinc (Zn), palladium (Pd), and the like. Note that the melting point of silver (Ag) is about 961°C. The melting point of aluminum (Al) is about 660°C. The melting point of gold (Au) is about 1063°C. Carbon (C) has a melting point of about 3600°C. Chromium (Cr) has a melting point of about 1900°C. The melting point of copper (Cu) is about 1083°C. The melting point of iron (Fe) is about 1539°C. The melting point of titanium (Ti) is about 1727°C. Nickel (Ni) has a melting point of about 1455°C. The melting point of zinc (Zn) is about 419°C. Palladium (Pd) has a melting point of about 328°C. The softening point of the adhesive layer 30 described above is approximately 170°C to 220°C.

As described above, in this embodiment, by using a metal or the like having a melting point of 300° C. or higher for the protective layer 40 , even if the adhesive layer 30 is softened during heating, the fluidity of the protective layer 40 is suppressed. Also, the melting point of the protective layer 40 is preferably 500° C. or higher. When the melting point of the protective layer 40 is 500° C. or higher, the fluidity of the protective layer 40 is further suppressed. The protective layer 40 having a melting point of 500° C. or higher includes silver (Ag), aluminum (Al), gold (Au), carbon (C), chromium (Cr), copper (Cu), iron (Fe), titanium (Ti ), nickel (Ni), and the like. Note that a process including a process of heating after forming the protective layer 40 is, for example, a rewiring layer forming process S04 to be described later.

<Rewiring Layer Forming Step>
The rewiring layer forming step S04 is performed after the protective layer forming step S03. In the rewiring layer forming step S04, the rewiring layer 71 is formed on the surface of the protective layer 40 on which the glass support 10 is not present. In this embodiment, after the rewiring layer 71 is formed, a technique called RLD first is performed in which the electronic component 81 is stacked on the rewiring layer 71 .

FIG. 2 is a flowchart showing an example of processing in the rewiring layer forming step S04. As shown in FIG. 2, the rewiring layer forming step S04 includes an insulating layer forming step S41, a resist layer forming step S42, a resist patterning step S43, an insulating layer etching step S44, a metal layer forming step S45, and a plating step S45. It includes a step S46, a metal layer top removal step S47, and a resist removal step S48.

First, in the insulating layer forming step S41, as shown in FIG. 4B, the insulating layer 50 is formed on the entire surface of the protective layer 40 using a material such as polyimide. In the insulating layer forming step S41, for example, the glass support 10 is held on a stage (not shown), and a liquid containing polyimide or the like is discharged onto the protective layer 40 from a slit nozzle or the like. By relatively moving the stage and the slit nozzle in this state, the insulating layer 50 is formed on the protective layer 40 . Materials applicable to the insulating layer 50 include, for example, polyimide and acrylic resin. In addition, the method of applying the liquid material for forming the insulating layer 50 is not particularly limited, but for example, the spin coating method, the dipping method, the roller blade method, the doctor blade method, the spray method, the slit nozzle method, the inkjet method, and the like. and the like. Alternatively, the liquid material for forming the insulating layer 50 may be applied on the protective layer 40 and then dried by heating or the like.

After the insulating layer 50 is formed, a resist layer forming step S42 is performed. In the resist layer forming step S42, a resist layer 60 is formed on the entire surface of the insulating layer 50, as shown in FIG. 5(A). In the resist layer forming step S42, a liquid material containing a resist is discharged onto the insulating layer 50 using a slit nozzle or the like. The resist that provides the resist layer 60 may be of a positive type or a negative type, and can be appropriately set according to the process. In addition, the method of applying the liquid for forming the resist layer 60 is not particularly limited, but examples include spin coating, dipping, roller blade, doctor blade, spray, slit nozzle, ink jet, and the like. and the like. Further, after the liquid material for forming the resist layer 60 is applied on the insulating layer 50, heating or the like may be performed.

After the resist layer 60 is formed, a resist patterning step S43 is performed. In the resist patterning step S43, the resist layer 60 is exposed in a pattern corresponding to the pattern of the rewiring layer 71, and then developed by being immersed in a predetermined developer. These processes include heating the resist layer 60 either before the resist layer 60 is exposed or after the resist layer 60 is exposed. In the present embodiment, the protective layer 40 is provided between the adhesive layer 30 and the insulating layer 50 , so that shrinkage or deformation of the adhesive layer 30 due to heat is suppressed when the resist layer 60 is heated. As a result, as shown in FIG. 5B, the patterned resist layers 61 do not move from the desired positions, and the resist layers 61 are spaced apart from each other. The resist layer 61 has a pattern opposite to the pattern of the rewiring layer 71 .

After the patterned resist layer 61 is formed, an insulating layer etching step S44 is performed. In the insulating layer etching step S44, the portion of the insulating layer 50 exposed from the resist layer 61 is removed by being immersed in an etchant. Any liquid that can dissolve the insulating layer 50 is used as the etchant. By etching the insulating layer 50, an insulating layer 51 having the same or substantially the same pattern as the resist layer 61 is formed, as shown in FIG. 6A. A portion of the protective layer 40 is exposed by the insulating layer 51 and the resist layer 61 .

After the insulating layer 50 is etched, a metal layer forming step S45 is performed. In the metal layer forming step S45, as shown in FIG. 6B, a metal that will be the material of the rewiring layer 71 is deposited on the entire surface of the insulating layer 51 including the exposed portion of the protective layer 40 by a technique such as sputtering. A layer 70 is formed. As the material used for the rewiring layer 71, for example, in addition to metals such as gold, silver, copper, and aluminum, a conductive resin or the like may be used. Also, the plating step S46 may be performed after the metal layer forming step S45. In the plating step S46, a plated layer is formed on the metal layer 70 by electroless plating or electrolytic plating. In FIG. 6B, the metal layer 70 including the plated layer is used. The plating step S46 forms a plated layer on the metal layer 70 by immersing the laminate 100 in a predetermined plating tank. Examples of materials used to form the plated layer include chemicals for solder plating, copper plating, gold plating, nickel plating, and silver-tin plating. Note that the plating step S46 may be omitted if the metal layer 70 having a sufficient thickness can be formed by a technique such as sputtering.

After the metal layer 70 is formed, a metal layer top removing step S47 is performed. In the metal layer upper removing step S47, for example, the upper surface of the metal layer 70 is removed by polishing or the like so that the entire surface of the resist layer 61 is exposed. As a result, the resist layer 61 is exposed as shown in FIG. 7(A). Also, a rewiring layer 71 is formed in a region between the laminated portions of the insulating layer 51 and the resist layer 61, that is, a region where the protective layer 40 was exposed.

After removing the upper portion of the metal layer 70, a resist removing step S48 is performed. In the resist removing step S48, the resist layer 61 is removed by supplying a gas, a solvent, or the like to the resist layer 61. FIG. As a result, an insulating layer 51 and a rewiring layer 71 are formed on the protective layer 40, as shown in FIG. 7B. Note that the rewiring layer 71 may include a dielectric layer and a conductor layer. A resin containing at least one of polyamic acid, polyimide, polyamideimide, and polyamide, for example, may be used as such a dielectric layer.

<Substrate formation process>
The substrate forming step S05 is performed, for example, after the rewiring layer forming step S04. In the substrate forming step S05, a substrate 80 having electronic components 81 electrically connected to the rewiring layer 71 is formed. In the substrate forming step S<b>05 , the substrate 80 having a thickness of, for example, 50 μm or more and 1000 μm or less is formed so that the thickness of the substrate 80 is thinner than the thickness of the glass support 10 . In the substrate forming step S05, first, as shown in FIG. The electronic component 81 and the rewiring layer 71 are electrically connected by a conductive adhesive, metal bumps, solder, or the like. Note that the number of electronic components 81 arranged may correspond to the number of rewiring layers 71, and is an arbitrary number. The electronic component 81 includes, for example, a chip or the like formed using a semiconductor or the like.

Subsequently, as shown in FIG. 8B, a mold 82 is formed so as to cover the entire surface of the insulating layer 51 including the electronic component 81 . By forming the mold 82 , the electronic component 81 is held in a state of being buried in the mold 82 . Note that the mold 82 may be formed so as to expose a portion (for example, the upper surface) of the electronic component 81 . Further, the mold 82 is formed using a material that can transmit light that alters the properties of the separation layer 20, for example. Examples of such materials include glass, silicon, acrylic resin, and the like.

<Mold Polishing Process>
The mold polishing step S06 is performed after the substrate forming step S05. The mold polishing step S06 may be included in the substrate forming step S05. In the mold polishing step S06, as shown in FIG. 9A, the side of the mold 82 where the glass support 10 is not present, that is, the upper surface 82a of the mold 82 is polished to expose the electronic component 81. FIG. By the mold polishing step S06, the upper surface (the surface on the +Z side) of the electronic component 81 and the upper surface 82a of the mold 82 are made flush or nearly flush. In the mold polishing step S06, the mold is polished by, for example, a known technique. In the substrate forming step S05, if the mold 82 is formed with a part of the electronic component 81 exposed, the mold polishing step S06 can be omitted.

After the mold polishing step S06, wiring may be formed on the upper surface 82a of the electronic component 81 and the mold 82 using a conductive material. Further, an electronic component 81 may be arranged so as to be electrically connected to this wiring, and a mold 82 may be further formed so as to cover this electronic component 81 . A metal bump, solder, or the like is used for connection between the wiring and the electronic component 81 . In this way, the substrate 80 may be formed by laminating a plurality of layers on which the electronic components 81 are arranged.

<Separation layer deterioration process>
The separation layer deterioration step S07 is performed after the mold polishing step S06 or the substrate forming step S05. In the separation layer alteration step S07, as shown in FIG. 9B, the side of the glass support 10 where the separation layer 20 is not present, that is, the separation layer 20 is irradiated from the bottom surface 10r of the glass support 10 with the irradiation device IR. Heat is applied from light L or a heating device (not shown). As the light L, light L having a wavelength capable of altering the separation layer 20 as described above is used. As the heat from the heating device, heat capable of heating the separation layer 20 to a temperature capable of similarly altering the properties of the separation layer 20 is used. Due to the separation layer alteration step S07, the separation layer 20 is altered and its strength or adhesion to the glass support 10 is lowered. In FIG. 9B, the glass support 10 (laminate 100) is turned upside down (with the substrate 80 facing downward), and light L is emitted from the upper irradiation device IR or heat is emitted from the heating device. is not limited to this form. For example, with the substrate 80 facing upward, the glass support 10 may be irradiated with light L from the irradiation device IR or heat from the heating device from below.

<Glass support peeling step>
The glass support peeling step S08 is performed, for example, after the separation layer deterioration step S07. In the glass support peeling step S08, as shown in FIG. 10A, the glass support 10 is lifted with the substrate 80 facing downward, thereby breaking the separation layer 20 and removing the substrate 80 from the glass support. 10 is stripped. The operation of lifting the glass support 10 upward may be performed by using a device for lifting the glass support 10 by suction, or by lifting the glass support 10 upward by an operator. At this time, the substrate 80 is attracted to, for example, a stage or the like, and is separated from the glass support 10 by lifting the glass support 10 . The laminated body 100 including the adhesive layer 30 and the substrate 80 is peeled off from the glass support 10 by the glass support peeling step S08.

<Adhesive removal step>
The adhesive layer removing step S09 is performed after the glass support peeling step S08. In the adhesive layer removing step S09, as shown in FIG. 10B, a solvent S1 that dissolves the adhesive layer 30 without dissolving the substrate 80 (wiring and mold 82) is supplied onto the adhesive layer 30. FIG. The supply of the solvent S1 to the adhesive layer 30 may be performed, for example, by scanning the adhesive layer 30 with a supply device S such as a dispenser, or by dipping the substrate 80 in a tank containing the solvent S1. good. The solvent S1 for dissolving the adhesive layer 30 is selected according to the material used for the adhesive layer 30. For example, when the adhesive layer 30 is a hydrocarbon elastomer, a hydrocarbon solvent is used as the solvent S1. Examples of the hydrocarbon-based solvent include terpene-based hydrocarbon-based solvents, alkane-based hydrocarbon-based solvents, and aromatic hydrocarbon-based solvents. as a result. The adhesive layer 30 is dissolved by the solvent S1, the adhesive layer 30 is removed from the substrate 80, and as shown in FIG. One plate-like structure 101 having the rewiring layer 71 and the insulating layer 51 on one surface of the mold 82 and the protective layer 40 is obtained.
Note that the solvent S1 is not limited to the hydrocarbon solvent, and a solvent other than the hydrocarbon solvent can be selected according to the material of the adhesive layer 30 . Typical examples include solvents containing at least one structure selected from the group consisting of an ester bond, an ether bond, a ketone group, an amide bond, and a hydroxy group, and these may be used alone. and may be used in combination. Moreover, these solvents may be used in combination with the aforementioned hydrocarbon-based solvents.

Subsequently, as shown in FIG. 11B, by removing the protective layer 40 from the structure 101, a structure 102 without the protective layer 40 can be obtained. Etching, for example, is used to remove the protective layer 40 . Note that the protective layer 40 does not have to be removed from the structure 101 . An electronic device can be obtained by dicing a portion of the mold 82 from the structure 101 or the structure 102 obtained as described above in a range including one or more electronic components 81 . When the structure 101 is diced, an electronic device having the protective layer 40 is obtained, and when the structure 102 is diced, an electronic device without the protective layer 40 is obtained.

As described above, according to the method for manufacturing a laminate and the method for manufacturing an electronic device according to the embodiment, the protective layer 40 having a melting point of 300° C. or higher is provided on the adhesive layer 30. This suppresses shrinkage or deformation of the adhesive layer 30 . As a result, the deformation or movement of the insulating layer 51 formed on the adhesive layer 30 can be suppressed, and the rewiring layer 71 can be formed with high accuracy, thereby suppressing a decrease in yield.

In the above-described embodiment, the insulating layer 50 is first formed and the resist layer 60 is formed on the insulating layer 50. However, the present invention is not limited to this embodiment. A configuration in which the insulating layer 50 having photosensitivity is used and the above-described resist layer 60 is not used may be employed.

FIG. 12 is a process diagram showing a rewiring layer forming step S14 in another example. In FIG. 12, laminate 200 is formed. As shown in FIG. 12, the rewiring layer forming step S14 includes an insulating layer forming step S141, an insulating layer patterning step S142, a metal layer forming step S143, a plating step S144, and a metal layer upper removing step S145. I'm in. Note that the separation layer forming step S01 (see FIG. 13A), the adhesive layer forming step S02 (see FIG. 13B), and the protective layer forming step (see FIG. 13B) are steps prior to the rewiring layer forming step S14. 14(A)) is the same as in the above-described embodiment, so the description thereof is omitted.

In the rewiring layer forming step S14, first, in the insulating layer forming step S141, as shown in FIG. . Examples of photosensitive insulating materials include photosensitive acrylic materials other than photosensitive polyimide. In the insulating layer forming step S141, for example, the glass support 10 is held on a stage (not shown), and a liquid containing photosensitive polyimide or the like is discharged onto the protective layer 40 from a slit nozzle or the like. By relatively moving the stage and the slit nozzle in this state, the insulating layer 150 is formed on the protective layer 40 . The method of applying the liquid material for forming the insulating layer 150 is not particularly limited, but for example, application by spin coating, dipping, roller blade, doctor blade, spray, slit nozzle, ink jet, etc. law, etc. Alternatively, after the liquid material for forming the insulating layer 150 is applied on the protective layer 40, it may be dried by heating or the like.

After the insulating layer 150 is formed, an insulating layer patterning step S142 is performed. In the insulating layer patterning step S142, the insulating layer 150 is exposed according to the pattern of the rewiring layer 171, and then developed by being immersed in a predetermined developer. As a result, a patterned insulating layer 151 is formed as shown in FIG. The insulating layer 151 has a pattern opposite to the pattern of the rewiring layer 171 .

After the insulating layer 151 is patterned, a metal layer forming step S143 is performed. In the metal layer forming step S143, as shown in FIG. 15B, a metal that will be the material of the rewiring layer 171 is deposited on the entire surface of the insulating layer 151 including the exposed portion of the protective layer 40 by a method such as sputtering. Layer 170 is formed. As a material used for the rewiring layer 171, for example, in addition to metals such as gold, silver, copper, and aluminum, a conductive resin or the like may be used. Also, the plating step S144 may be performed after the metal layer forming step S143. In the plating step S144, a plated layer is formed on the metal layer 170 by electroless plating or electrolytic plating. In FIG. 15B, the metal layer 170 including the plated layer is used. The plating step S144 forms a plated layer on the metal layer 170 by immersing the laminate 200 in a predetermined plating bath. Examples of materials used to form the plated layer include chemical solutions for solder plating, copper plating, gold plating, nickel plating, and silver-tin plating. Note that the plating step S144 may be omitted if the metal layer 170 having a sufficient thickness can be formed by a technique such as sputtering.

After the metal layer 170 is formed, a metal layer top removing step S145 is performed. In the metal layer upper removing step S145, for example, the upper surface of the metal layer 170 is removed by polishing or the like so that the entire surface of the insulating layer 151 is exposed. As a result, as shown in FIG. 16A, the entire surface of the insulating layer 151 is exposed. Also, a rewiring layer 171 is formed in the region between the insulating layers 151, that is, the region where the protective layer 40 was exposed.

The substrate forming step S05 is performed, for example, after the rewiring layer forming step S14. In the substrate forming step S05, the substrate 80 having the electronic components 81 on the rewiring layer 171 is formed by the same method as in the above embodiment. In the substrate forming step S05, first, as shown in FIG. 16B, a plurality of electronic components 81 are arranged on the rewiring layer 171 and adhered and fixed to the insulating layer 151. Then, as shown in FIG. The electronic component 81 and the rewiring layer 171 are electrically connected by a conductive adhesive, metal bumps, solder, or the like. Note that the number of electronic components 81 arranged may correspond to the number of rewiring layers 171, and is an arbitrary number.

Subsequently, as shown in FIG. 17B, a mold 82 is formed so as to cover the entire surface of the insulating layer 151 including the electronic component 81 . By forming the mold 82 , the electronic component 81 is held in a state of being buried in the mold 82 . Note that the mold 82 is the same as in the above-described embodiment. Subsequently, in the mold polishing step S06, as shown in FIG. 17B, the side of the mold 82 where the glass support 10 is not present, that is, the upper surface 82a of the mold 82 is polished to expose the electronic component 81. As a result, the upper surface (the surface on the +Z side) of the electronic component 81 and the upper surface 82a of the mold 82 are in the same plane or substantially the same plane. The mold polishing step S06 is the same as in the embodiment described above.

After the mold polishing step S06, wiring may be formed on the upper surface 82a of the electronic component 81 and the mold 82 from a conductive material, and the electronic component 81 may be electrically connected to the wiring. The point that a mold 82 may be further formed so as to cover the electronic component 81 is the same as in the above-described embodiment.

Subsequently, in the same manner as in the above-described embodiments, the separation layer deterioration step S07, the glass support peeling step S08, and the adhesive layer removal step S09 are performed to form a plate including the plurality of electronic components 81. A structure 101 is obtained. Further, by removing the protective layer 40 from the structure 101, the structure 102 without the protective layer 40 can be obtained. The point that an electronic device can be obtained by dicing from the structure 101 or the structure 102 is the same as in the above-described embodiments.

As described above, according to the present embodiment, by using a photosensitive material such as photosensitive polyimide as the insulating layer 150, steps such as formation and removal of the resist layer can be omitted.

Next, a comparison was made between a product produced by the method for producing a laminate according to this embodiment and a product produced without using this embodiment. FIG. 18A is a diagram showing a part of a rewiring layer formed by a manufacturing method according to a comparative example, and FIG. 18B is a diagram showing a rewiring layer formed by a laminate manufacturing method according to the embodiment. is a diagram showing a part of. In the manufacturing method according to the comparative example, the adhesive layer is formed on the separation layer, and the rewiring layer is formed on the adhesive layer without providing the protective layer. In both the comparative example and the working example, the same rewiring layer is formed by stacking a plurality of layers in order to facilitate the comparison of appearance.

As shown in FIG. 18(A), when formed by the manufacturing method according to the comparative example, the rewiring layer 271 which should be formed so as to overlap with each other is shifted in the planar direction. On the other hand, as shown in FIG. 18B, in the rewiring layers 71 and 171 formed by the manufacturing method according to the present embodiment, such displacement in the planar direction was not observed. As described above, in the above-described embodiment, it was confirmed that the formation of the protective layer 40 suppressed the displacement of the rewiring layers 71 and 171 in the planar direction.

Although the embodiments and examples have been described above, the present invention is not limited to the above description, and various modifications can be made without departing from the gist of the present invention.

Reference Signs List 10 Glass support 10f Separation layer forming surface 20 Separation layer 20f Adhesive layer forming surface 30 Adhesive layer 30f Protective layer forming surface 40 Protective layer 50, 51, 150, 151 Insulating layer 60, 61 Resist layer 70 Metal layer 71, 171 Rewiring layer 80 Substrate , 81... electronic component, 82... mold, 100, 200... laminate, 101, 102... structure (electronic device)

Claims (14)

Laminating in this order a support, a separation layer that changes in quality due to light absorption or heating, an adhesive layer, and a protective layer that is used to form a rewiring layer and has a melting point of 300° C. or higher. and forming the protective layer on the entire surface of the adhesive layer on the side where the support is not present . Laminating in this order a support, a separation layer that changes in quality due to light absorption or heating, an adhesive layer, and a protective layer that is used to form a rewiring layer and has a melting point of 300° C. or higher. and the protective layer is formed of a metal containing one or both of Ti and Cu . Laminating in this order a support, a separation layer that changes in quality due to light absorption or heating, an adhesive layer, and a protective layer that is used to form a rewiring layer and has a melting point of 300° C. or higher. A method for producing a laminate, wherein the adhesive layer has a melting point of 50° C. or higher and 300° C. or lower. 2. The method of manufacturing a laminate according to claim 1, wherein said protective layer is made of a conductive metal. The method for manufacturing a laminate according to any one of claims 1 to 4 , wherein the protective layer is formed by sputtering. The method for manufacturing a laminate according to any one of claims 1 to 5 , wherein the adhesive layer has a thickness of 1 µm or more and 100 µm or less. 7. The method for producing a laminate according to any one of claims 1 to 6 , wherein the support is made of glass or other light-transmitting material. 8. The method of manufacturing a laminate according to any one of claims 1 to 7 , comprising forming the rewiring layer on the protective layer. 9. The method of manufacturing a laminate according to claim 8 , wherein said rewiring layer includes a dielectric layer and a conductor layer. 10. The method of manufacturing a laminate according to claim 9 , wherein the dielectric layer uses a resin containing at least one of polyamic acid, polyimide, polyamideimide, and polyamide. laminating a substrate having electronic components on the rewiring layer;
The substrate has a thickness of 50 μm or more and 1000 μm or less,
The method for producing a laminate according to any one of claims 1 to 10 , wherein the support has a thickness of 500 µm or more and 2000 µm or less and is thicker than the thickness of the substrate. 12. The method of manufacturing a laminate according to claim 11 , wherein the substrate molds the electronic component with a molding material. A support, a separation layer that deteriorates due to light absorption or heating, an adhesive layer, and a protective layer used for forming a rewiring layer and having a melting point of 500° C. or higher are laminated in this order, and the adhesive layer A laminate in which the protective layer is formed on the entire surface of the side where the support is not present . Manufacturing a laminate by the method for manufacturing a laminate according to claim 11 or 12 ;
denaturing the separation layer to separate the support from the laminate;
removing the adhesive layer and the separation layer from the substrate to obtain an electronic device including the electronic component.

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