JP7135966B2 - Leakage detection circuit - Google Patents
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Description
本発明は、漏電検知回路に関する。 The present invention relates to an earth leakage detection circuit.
漏電検知回路として、車両に搭載される直流電源のグランドラインにカップリングコンデンサを介して検出抵抗を接続するとともに、グランドラインと車両のボディアースとの間に発振信号を出力し、検出抵抗にかかる電圧の波高値が閾値以下であるとき、絶縁抵抗の抵抗値が低下していること、すなわち、漏電が発生していることを検知するものがある。 As a leakage detection circuit, a detection resistor is connected to the ground line of the DC power supply installed in the vehicle via a coupling capacitor, and an oscillation signal is output between the ground line and the vehicle's body ground, and the detection resistor is applied. When the peak value of the voltage is equal to or less than a threshold, there is a device that detects that the resistance value of the insulation resistance has decreased, that is, that an electric leak has occurred.
関連する技術として、例えば、特許文献１がある。 As a related technique, there is, for example, Patent Document 1.
しかしながら、上記漏電検知回路は、検出抵抗のインピーダンスが下がるなど漏電検知回路が故障することで検出抵抗にかかる電圧の波高値が、漏電検知回路が故障していない場合に比べて高くなると、実際には漏電が発生しているにもかかわらず、漏電が発生していないと誤検知してしまうおそれがある。そのため、漏電検知回路が故障していることを判定して、ユーザに漏電検知回路の修理を促すことが必要である。 However, in the above ground leakage detection circuit, if the peak value of the voltage applied to the detection resistor becomes higher than when the ground leakage detection circuit is not broken due to a failure of the ground leakage detection circuit such as a decrease in the impedance of the detection resistor, There is a risk of erroneously detecting that there is no earth leakage even though there is an earth leakage. Therefore, it is necessary to determine that the leakage detection circuit is out of order and prompt the user to repair the leakage detection circuit.
本発明の一側面に係る目的は、車両に搭載される直流電源のグランドラインと車両のボディアースとの間の絶縁抵抗の抵抗値の低下を検知する漏電検知回路の故障を漏電検知回路自身で判定することである。 An object according to one aspect of the present invention is to detect a failure of an earth leakage detection circuit for detecting a decrease in the resistance value of an insulation resistance between a ground line of a DC power supply mounted on a vehicle and a body ground of the vehicle by the earth leakage detection circuit itself. It is to judge.
本発明に係る一つの形態である漏電検知回路は、車両に搭載される直流電源のグランドラインと車両のボディアースとの間の絶縁抵抗の抵抗値の低下を検知する漏電検知回路であって、発振信号を出力する発振回路と、発振回路とグランドラインに接続されるカップリングコンデンサとの間に接続される検出抵抗と、模擬絶縁抵抗と、絶縁抵抗と模擬絶縁抵抗とが互いに並列接続されていない第１の状態、及び、絶縁抵抗と模擬絶縁抵抗とが互いに並列接続されている第２の状態のどちらか一方の状態に切り替えるスイッチと、第１の状態になるようにスイッチの動作を制御しているとき、検出抵抗にかかる電圧の波高値が閾値以下である場合、絶縁抵抗の抵抗値が低下していることを検知する検知部と、漏電検知回路が故障していないときの絶縁抵抗の抵抗値と検出抵抗にかかる電圧の波高値との対応関係を示す情報を記憶する記憶部とを備える。 An earth leakage detection circuit according to one aspect of the present invention is an earth leakage detection circuit that detects a decrease in the resistance value of an insulation resistance between a ground line of a DC power supply mounted on a vehicle and a body ground of the vehicle, An oscillation circuit that outputs an oscillation signal, a detection resistor connected between the oscillation circuit and a coupling capacitor connected to the ground line, a simulated insulation resistance, and an insulation resistance and a simulated insulation resistance are connected in parallel with each other. A switch that switches to either a first state in which the insulation resistance is not present or a second state in which the insulation resistance and the simulated insulation resistance are connected in parallel to each other, and the operation of the switch is controlled to be in the first state. When the peak value of the voltage applied to the detection resistor is less than the threshold, the detection unit detects that the resistance value of the insulation resistance has decreased, and the insulation resistance when the leakage detection circuit is not broken. and a storage unit for storing information indicating a correspondence relationship between the resistance value of the detection resistor and the peak value of the voltage applied to the detection resistor.
また、検知部は、第１の状態になるようにスイッチの動作を制御しているとき、上記情報を参照して、検出抵抗にかかる電圧の波高値に対応する抵抗値を故障判定用抵抗値とし、上記情報を参照して、故障判定用抵抗値と模擬絶縁抵抗の抵抗値との合成抵抗値に対応する波高値を故障判定用波高値とし、第２の状態になるようにスイッチの動作を制御しているとき、検出抵抗にかかる電圧の波高値が故障判定用波高値と異なる場合、漏電検知回路が故障していると判定する。 Further, when the detection unit is controlling the operation of the switch so as to be in the first state, the detection unit refers to the above information and determines the resistance value corresponding to the peak value of the voltage applied to the detection resistor as the failure judgment resistance value. Then, referring to the above information, the peak value corresponding to the combined resistance value of the resistance value for failure determination and the resistance value of the simulated insulation resistance is set as the peak value for failure determination, and the switch is operated so as to be in the second state. is controlled, if the peak value of the voltage applied to the detection resistor is different from the peak value for fault determination, it is determined that the leakage detection circuit is faulty.
漏電検知回路が故障していない場合、絶縁抵抗と模擬絶縁抵抗とが互いに並列接続されているときに検出抵抗にかかる電圧の波高値は、故障判定用波高値と同じになると想定される。そのため、検出抵抗のインピーダンスが下がるなど漏電検知回路が故障している場合、絶縁抵抗と模擬絶縁抵抗とが互いに並列接続されているときに検出抵抗にかかる電圧の波高値は、故障判定用波高値と異なると想定される。 When the leakage detection circuit is not malfunctioning, the peak value of the voltage applied to the detection resistor when the insulation resistor and the simulated insulation resistor are connected in parallel is assumed to be the same as the failure determination peak value. Therefore, if the leakage detection circuit fails, such as when the impedance of the detection resistor drops, the peak value of the voltage applied to the detection resistor when the insulation resistance and the simulated insulation resistance are connected in parallel will be the peak value for fault determination. is assumed to be different from
そこで、本発明に係る一つの形態である漏電検知回路では、絶縁抵抗と模擬絶縁抵抗とが互いに並列接続されるようにスイッチの動作を制御しているときに検出抵抗にかかる電圧の波高値が故障判定用波高値と異なる場合、漏電検知回路が故障していると判定する。これにより、漏電検知回路は、自身が故障していると判定することができる。 Therefore, in the earth leakage detection circuit, which is one embodiment of the present invention, when the operation of the switch is controlled so that the insulation resistance and the simulated insulation resistance are connected in parallel, the peak value of the voltage applied to the detection resistance is If it is different from the peak value for fault determination, it is determined that the leakage detection circuit is faulty. Thereby, the earth leakage detection circuit can determine that itself is out of order.
また、検知部は、絶縁抵抗に並列接続される浮遊容量の容量値を求め、その求めた容量値により上記情報を補正するように構成してもよい。 Further, the detection unit may be configured to obtain the capacitance value of the stray capacitance connected in parallel with the insulation resistor, and correct the above information based on the obtained capacitance value.
浮遊容量の容量値が増加すると、検出抵抗にかかる電圧の波高値が低下する。
そこで、本発明に係る一つの形態である漏電検知回路では、浮遊容量の容量値により上記情報を補正する。これにより、浮遊容量の容量値の増加に伴って波高値が低下してしまっても、故障判定用抵抗値や故障判定用波高値を適切に求めていることができるため、漏電検知回路の故障判定精度を向上させることができる。
As the capacitance value of the stray capacitance increases, the peak value of the voltage across the detection resistor decreases.
Therefore, in the leakage detection circuit, which is one embodiment of the present invention, the above information is corrected based on the capacitance value of the stray capacitance. As a result, even if the peak value decreases due to an increase in the capacitance value of the stray capacitance, the failure determination resistance value and the peak value for failure determination can be obtained appropriately. Judgment accuracy can be improved.
本発明によれば、車両に搭載される直流電源のグランドラインと車両のボディアースとの間の絶縁抵抗の抵抗値の低下を検知する漏電検知回路の故障を漏電検知回路自身で判定することができる。 According to the present invention, the leakage detection circuit itself can determine a failure of the leakage detection circuit that detects a decrease in the resistance value of the insulation resistance between the ground line of the DC power supply mounted on the vehicle and the body ground of the vehicle. can.
以下図面に基づいて実施形態について詳細を説明する。
図１は、実施形態の漏電検知回路の一例を示す図である。
Embodiments will be described in detail below with reference to the drawings.
FIG. 1 is a diagram showing an example of an earth leakage detection circuit according to an embodiment.
直流電源Ｐは、直列接続される複数の電池（例えば、リチウムイオン電池またはニッケル水素電池）により構成される高圧バッテリであって、ハイブリッド車や電気自動車などの車両に搭載され、走行用モータを駆動するインバータ回路などの負荷Ｌｏに電力を供給する。 The DC power supply P is a high-voltage battery composed of a plurality of batteries (for example, lithium-ion batteries or nickel-metal hydride batteries) connected in series. power is supplied to a load Lo such as an inverter circuit that
漏電検知回路１は、直流電源ＰのグランドラインＧＬと車両のボディアースＢＥとの間の絶縁抵抗Ｒｉの抵抗値の低下を検知する。また、漏電検知回路１は、発振回路２と、検出抵抗Ｒｄと、模擬絶縁抵抗Ｒｉ´と、スイッチＳＷと、記憶部３と、検知部４とを備える。 The leakage detection circuit 1 detects a decrease in the resistance value of the insulation resistance Ri between the ground line GL of the DC power supply P and the body ground BE of the vehicle. The leakage detection circuit 1 also includes an oscillation circuit 2 , a detection resistor Rd, a simulated insulation resistance Ri′, a switch SW, a storage section 3 and a detection section 4 .
発振回路２は、ボディアースＢＥに接続され、矩形波などの発振信号ＳをグランドラインＧＬとボディアースＢＥとの間に出力する。なお、発振信号Ｓは、漏電検知用発振信号Ｓ１または浮遊容量検知用発振信号Ｓ２とする。また、漏電検知用発振信号Ｓ１の周波数は、絶縁抵抗Ｒｉ、絶縁抵抗Ｒｉに仮想的に並列接続される浮遊容量Ｃｆ、カップリングコンデンサＣｃ、及び検出抵抗Ｒｄなどにより構成されるローパスフィルタＬＰＦのカットオフ周波数ｆｃより低い周波数とする。また、浮遊容量検知用発振信号Ｓ２の周波数は、ローパスフィルタＬＰＦのカットオフ周波数ｆｃより高い周波数とする。 The oscillator circuit 2 is connected to the body ground BE and outputs an oscillation signal S such as a rectangular wave between the ground line GL and the body ground BE. The oscillation signal S is assumed to be the leakage detection oscillation signal S1 or the stray capacitance detection oscillation signal S2. Further, the frequency of the leakage detection oscillation signal S1 is set by the cutoff of a low-pass filter LPF composed of an insulation resistor Ri, a stray capacitance Cf virtually connected in parallel with the insulation resistor Ri, a coupling capacitor Cc, a detection resistor Rd, and the like. A frequency lower than the off frequency fc. The frequency of the stray capacitance detection oscillation signal S2 is set to a frequency higher than the cutoff frequency fc of the low-pass filter LPF.
ここで、図２（ａ）は、ローパスフィルタＬＰＦの周波数特性を示す図である。図２（ａ）に示す２次元座標の横軸は発振信号Ｓの周波数［Ｈｚ］を示し、縦軸は発振信号Ｓの波高値に対する、検出抵抗Ｒｄにかかる電圧の波高値Ｖｄの比率（検出抵抗Ｒｄにかかる電圧の波高値Ｖｄ／発振信号Ｓの波高値）、すなわち、ローパスフィルタＬＰＦのゲイン［ｄＢ］を示している。 Here, FIG. 2A is a diagram showing frequency characteristics of the low-pass filter LPF. The horizontal axis of the two-dimensional coordinates shown in FIG. 2A indicates the frequency [Hz] of the oscillation signal S, and the vertical axis indicates the ratio of the peak value Vd of the voltage applied to the detection resistor Rd to the peak value of the oscillation signal S (detection The peak value Vd of the voltage applied to the resistor Rd/the peak value of the oscillation signal S), that is, the gain [dB] of the low-pass filter LPF.
漏電検知用発振信号Ｓ１の周波数がローパスフィルタＬＰＦのカットオフ周波数ｆｃより低い周波数ｆ１になるように発振回路２の動作が制御される場合、絶縁抵抗Ｒｉの抵抗値ｒｉが低下すると、検出抵抗Ｒｄにかかる電圧の波高値Ｖｄが低下する。 When the operation of the oscillation circuit 2 is controlled so that the frequency of the leakage detection oscillation signal S1 becomes a frequency f1 lower than the cutoff frequency fc of the low-pass filter LPF, when the resistance value ri of the insulation resistance Ri decreases, the detection resistance Rd The peak value Vd of the voltage applied to is lowered.
すなわち、漏電検知回路１が故障していない場合で、かつ、検出抵抗Ｒｄの抵抗値、及びカップリングコンデンサＣｃの容量値がそれぞれ変動しない場合において、漏電検知用発振信号Ｓ１の周波数が周波数ｆ１になるように発振回路２の動作を制御することにより、抵抗値ｒｉと波高値Ｖｄとを一対一で対応付けることができる。 That is, when the leakage detection circuit 1 does not fail and the resistance value of the detection resistor Rd and the capacitance value of the coupling capacitor Cc do not change, the frequency of the oscillation signal S1 for leakage detection is set to the frequency f1. By controlling the operation of the oscillation circuit 2 such that the resistance value ri and the crest value Vd can be associated on a one-to-one basis.
実施形態では、漏電検知回路１が故障していないときの抵抗値ｒｉと波高値Ｖｄとの対応関係を示す情報Ｄ１を、実験またはシミュレーションなどにより求めて記憶部３に記憶させておく。 In the embodiment, the information D1 indicating the correspondence relationship between the resistance value ri and the peak value Vd when the leakage detection circuit 1 is not out of order is obtained by experiments or simulations and stored in the storage unit 3 .
図２（ｂ）は、情報Ｄ１の一例を示す図である。なお、図２（ａ）に示す２次元座標の横軸は、漏電検知回路１が故障していないときの絶縁抵抗Ｒｉの抵抗値ｒｉ［ｋΩ］を示し、縦軸は、検出抵抗Ｒｄにかかる電圧の波高値Ｖｄ［Ｖ］を示している。また、図２（ｂ）に示す実線は、漏電検知回路１が故障していないときの抵抗値ｒｉと波高値Ｖｄとの対応関係を示す情報Ｄ１を示している。 FIG. 2(b) is a diagram showing an example of the information D1. Note that the horizontal axis of the two-dimensional coordinates shown in FIG. 2(a) indicates the resistance value ri [kΩ] of the insulation resistance Ri when the leakage detection circuit 1 is not faulty, and the vertical axis indicates the resistance value of the detection resistance Rd. It shows the peak value Vd [V] of the voltage. Further, the solid line shown in FIG. 2(b) indicates information D1 indicating the correspondence relationship between the resistance value ri and the peak value Vd when the leakage detection circuit 1 is not out of order.
図２（ｂ）に示す情報Ｄ１では、抵抗値ｒｉが小さくなるほど、波高値Ｖｄが小さくなる。言い換えると、抵抗値ｒｉが閾値ｒｉｔｈ以上である場合、波高値Ｖｄが閾値Ｖｄｔｈ１以上になり、抵抗値ｒｉが閾値ｒｉｔｈより小さい場合、波高値Ｖｄが閾値Ｖｄｔｈ１より小さくなる。 In the information D1 shown in FIG. 2B, the crest value Vd decreases as the resistance value ri decreases. In other words, when the resistance value ri is equal to or greater than the threshold value rith, the peak value Vd is equal to or greater than the threshold value Vdth1, and when the resistance value ri is smaller than the threshold value rith, the peak value Vd is smaller than the threshold value Vdth1.
また、図２（ａ）に示すように、浮遊容量検知用発振信号Ｓ２の周波数がローパスフィルタＬＰＦのカットオフ周波数ｆｃより高い周波数ｆ２になるように発振回路２の動作が制御される場合、ローパスフィルタＬＰＦを構成する絶縁抵抗Ｒｉ、浮遊容量Ｃｆ、検出抵抗Ｒｄ、及びカップリングコンデンサＣｃの影響を受けてローパスフィルタＬＰＦのゲインが「ゼロ」よりも小さい「Ｇ」に下るため、浮遊容量検知用発振信号Ｓ２の周波数がローパスフィルタＬＰＦのカットオフ周波数ｆｃより高い周波数ｆ１になるように発振回路２の動作が制御される場合に比べて、波高値Ｖｄが低くなる。 Further, as shown in FIG. 2A, when the operation of the oscillation circuit 2 is controlled so that the frequency of the stray capacitance detection oscillation signal S2 becomes a frequency f2 higher than the cutoff frequency fc of the low-pass filter LPF, the low-pass The gain of the low-pass filter LPF drops to "G" which is smaller than "zero" under the influence of the insulation resistance Ri, stray capacitance Cf, detection resistor Rd, and coupling capacitor Cc that make up the filter LPF. The crest value Vd is lower than when the operation of the oscillation circuit 2 is controlled so that the frequency of the oscillation signal S2 becomes a frequency f1 higher than the cutoff frequency fc of the low-pass filter LPF.
また、浮遊容量Ｃｆの容量値ｃｆが増加するほど、カットオフ周波数ｆｃが低下するため、すなわち、図２（ａ）に示すように、浮遊容量Ｃｆの容量値ｃｆが増加すると、ローパスフィルタＬＰＦの周波数特性が実線で示される周波数特性から破線で示される周波数特性に変化するため、浮遊容量検知用発振信号Ｓ２の周波数が周波数ｆ２になるように発振回路２の動作が制御される場合、ローパスフィルタＬＰＦのゲインが「Ｇ」から「Ｇ´」にさらに下がり、波高値Ｖｄがさらに低下する。なお、「Ｇ´」＜「Ｇ」とする。 In addition, as the capacitance value cf of the stray capacitance Cf increases, the cutoff frequency fc decreases. Since the frequency characteristic changes from the frequency characteristic indicated by the solid line to the frequency characteristic indicated by the broken line, when the operation of the oscillation circuit 2 is controlled so that the frequency of the stray capacitance detection oscillation signal S2 becomes the frequency f2, the low-pass filter The gain of the LPF further decreases from "G" to "G'", and the crest value Vd further decreases. Note that “G′”<“G”.
すなわち、絶縁抵抗Ｒｉの抵抗値ｒｉ、検出抵抗Ｒｄの抵抗値、及びカップリングコンデンサＣｃの容量値がそれぞれ変動しない場合において、浮遊容量検知用発振信号Ｓ２の周波数が周波数ｆ２になるように発振回路２の動作を制御することにより、容量値ｃｆと波高値Ｖｄとを一対一で対応付けることができる。 That is, when the resistance value ri of the insulation resistor Ri, the resistance value of the detection resistor Rd, and the capacitance value of the coupling capacitor Cc do not fluctuate, the oscillation circuit is arranged so that the frequency of the stray capacitance detection oscillation signal S2 becomes the frequency f2. 2, the capacitance value cf and the peak value Vd can be associated on a one-to-one basis.
実施形態では、絶縁抵抗Ｒｉの抵抗値ｒｉ、検出抵抗Ｒｄの抵抗値、及びカップリングコンデンサＣｃの容量値がそれぞれ変動しない場合で、かつ、浮遊容量発振信号Ｓ２の周波数が周波数ｆ２になるように発振回路２の動作を制御している場合において、波高値Ｖｄと容量値ｃｆとの対応関係を示す情報Ｄ２を、実験またはシミュレーションなどにより求めて記憶部３に記憶させておく。 In the embodiment, when the resistance value ri of the insulation resistor Ri, the resistance value of the detection resistor Rd, and the capacitance value of the coupling capacitor Cc do not fluctuate, and the frequency of the stray capacitance oscillation signal S2 is set to the frequency f2, When the operation of the oscillation circuit 2 is being controlled, the information D2 indicating the correspondence between the peak value Vd and the capacitance value cf is obtained by experiments or simulations and stored in the storage unit 3 .
図２（ｃ）は、情報Ｄ２の一例を示す図である。
図２（ｃ）に示す情報Ｄ２では、容量値ｃｆとしての「ｃｆ１」と波高値Ｖｄとしての「Ｖｄ３」とが互いに対応付けられ、容量値ｃｆとしての「ｃｆ２」と波高値Ｖｄとしての「Ｖｄ２」とが互いに対応付けられ、容量値ｃｆとしての「ｃｆ３」と波高値Ｖｄとしての「Ｖｄ１」とが互いに対応付けられている。なお、「ｃｆ１」＜「ｃｆ２」＜「ｃｆ３」、「Ｖｄ１」＜「Ｖｄ２」＜「Ｖｄ３」とする。すなわち、情報Ｄ２では、容量値ｃｆが増加するほど、波高値Ｖｄが低下する。言い換えると、容量値ｃｆが閾値ｃｆｔｈ以下である場合、波高値Ｖｄが閾値Ｖｄｔｈ２以上になり、容量値ｃｆが閾値ｃｆｔｈより大きい場合、波高値Ｖｄが閾値Ｖｄｔｈ２より小さくなる。
FIG. 2(c) is a diagram showing an example of the information D2.
In the information D2 shown in FIG. 2C, "cf1" as the capacitance value cf and "Vd3" as the peak value Vd are associated with each other, and "cf2" as the capacitance value cf and "cf2" as the peak value Vd are associated with each other. Vd2" are associated with each other, and "cf3" as the capacitance value cf and "Vd1" as the peak value Vd are associated with each other. Note that "cf1"<"cf2"<"cf3" and "Vd1"<"Vd2"<"Vd3". That is, in the information D2, the peak value Vd decreases as the capacitance value cf increases. In other words, when the capacitance value cf is equal to or less than the threshold value cfth, the peak value Vd becomes equal to or greater than the threshold value Vdth2, and when the capacitance value cf is greater than the threshold value cfth, the peak value Vd becomes smaller than the threshold value Vdth2.
また、図１に示す検出抵抗Ｒｄは、グランドラインＧＬに接続されるカップリングコンデンサＣｃと、ボディアースＢＥに接続される発振回路２との間に接続される。 Also, the detection resistor Rd shown in FIG. 1 is connected between the coupling capacitor Cc connected to the ground line GL and the oscillation circuit 2 connected to the body ground BE.
模擬絶縁抵抗Ｒｉ´の一方端はボディアースＢＥに接続され、模擬絶縁抵抗Ｒｉ´の他方端はスイッチＳＷの一方端に接続され、スイッチＳＷの他方端はカップリングコンデンサＣｃと検出抵抗Ｒｄとの接続点に接続されている。 One end of the simulated insulation resistance Ri' is connected to the body ground BE, the other end of the simulated insulation resistance Ri' is connected to one end of the switch SW, and the other end of the switch SW is connected between the coupling capacitor Cc and the detection resistor Rd. Connected to the connection point.
スイッチＳＷは、半導体スイッチまたは電磁式リレーなどにより構成され、検知部４により動作が制御される。また、スイッチＳＷは、カップリングコンデンサＣｃと検出抵抗Ｒｄとの接続点と模擬絶縁抵抗Ｒｉ´とが互いに接続されていない状態、すなわち、絶縁抵抗Ｒｉと模擬絶縁抵抗Ｒｉ´とが互いに並列接続されていない第１の状態、及び、カップリングコンデンサＣｃと検出抵抗Ｒｄとの接続点と模擬絶縁抵抗Ｒｉ´とが互いに接続されている、すなわち、絶縁抵抗Ｒｉと模擬絶縁抵抗Ｒｉ´とが互いに並列接続されている第２の状態のどちらか一方の状態に切り替える。 The switch SW is configured by a semiconductor switch, an electromagnetic relay, or the like, and its operation is controlled by the detector 4 . The switch SW is set in a state in which the connection point between the coupling capacitor Cc and the detection resistor Rd and the simulated insulation resistance Ri' are not connected to each other, that is, the insulation resistance Ri and the simulated insulation resistance Ri' are connected in parallel to each other. A first state in which the connection point between the coupling capacitor Cc and the detection resistor Rd and the simulated insulation resistance Ri′ are connected to each other, that is, the insulation resistance Ri and the simulated insulation resistance Ri′ are connected in parallel with each other. Switch to either one of the connected second states.
なお、模擬絶縁抵抗Ｒｉ´の抵抗値は、例えば、スイッチＳＷにより第２の状態に切り替えられているときに検出抵抗Ｒｄにかかる電圧の波高値Ｖｄが、スイッチＳＷにより第１の状態に切り替えられているときで、かつ、漏電しているときに検出抵抗Ｒｄにかかる電圧の波高値Ｖｄと同じになるときの模擬絶縁抵抗Ｒｉの抵抗値とする。 Note that the resistance value of the simulated insulation resistor Ri′ is, for example, the peak value Vd of the voltage applied to the detection resistor Rd when the switch SW is switched to the second state, and the switch SW is switched to the first state. The resistance value of the simulated insulation resistor Ri is set to be the same as the peak value Vd of the voltage applied to the detection resistor Rd when there is a current leakage.
記憶部３は、例えば、ＲＡＭ（Random Access Memory）またはＲＯＭ（Read Only Memory）などにより構成され、上記情報Ｄ１、Ｄ２などを記憶する。 The storage unit 3 is configured by, for example, a RAM (Random Access Memory) or a ROM (Read Only Memory), and stores the information D1, D2 and the like.
検知部４は、例えば、ＣＰＵ（Central Processing Unit）、マルチコアＣＰＵ、またはプログラマブルなデバイス（ＦＰＧＡ（Field Programmable Gate Array）やＰＬＤ（Programmable Logic Device））などにより構成され、カップリングコンデンサＣｃと検出抵抗Ｒｄとの間に接続される。なお、検出抵抗Ｒｄと検知部４との間にローパスフィルタまたはバンドパスフィルタなどを接続してもよい。 The detection unit 4 is configured by, for example, a CPU (Central Processing Unit), a multicore CPU, or a programmable device (FPGA (Field Programmable Gate Array) or PLD (Programmable Logic Device)), and includes a coupling capacitor Cc and a detection resistor Rd. connected between A low-pass filter, band-pass filter, or the like may be connected between the detection resistor Rd and the detection section 4 .
また、検知部４は、第１の状態になるようにスイッチＳＷの動作を制御しているときで、かつ、発振回路２から漏電検知用発振信号Ｓ１を出力させているとき、検出抵抗Ｒｄにかかる電圧の波高値Ｖｄが閾値Ｖｄｔｈ３以下である場合、絶縁抵抗Ｒｉの抵抗値ｒｉが低下していること、すなわち、漏電が発生していることを検知する。なお、閾値Ｖｄｔｈ３は、実験やシミュレーションなどにより求められ記憶部３に記憶されているものとし、例えば、漏電になる直前の波高値Ｖｄとする。 Further, when the detection unit 4 is controlling the operation of the switch SW to be in the first state and when the oscillation circuit 2 is outputting the leakage detection oscillation signal S1, the detection resistor Rd When the peak value Vd of the voltage is equal to or less than the threshold value Vdth3, it is detected that the resistance value ri of the insulation resistance Ri has decreased, that is, that an electric leak has occurred. The threshold value Vdth3 is assumed to be determined by experiments, simulations, or the like and stored in the storage unit 3. For example, the peak value Vd immediately before electric leakage occurs.
また、検知部４は、故障判定処理を実行することにより、漏電検知回路１が故障しているか否かを判定する。なお、漏電検知回路１の故障とは、カップリングコンデンサＣｃから検知部４までの配線或いは検出抵抗Ｒｄのインピーダンスが通常より高い状態、または、カップリングコンデンサＣｃから検知部４までの配線或いは検出抵抗Ｒｄのインピーダンスが通常よりも低い状態とする。カップリングコンデンサＣｃから検知部４までの配線或いは検出抵抗Ｒｄのインピーダンスが通常より高い状態とは、例えば、カップリングコンデンサＣｃから検知部４までの配線或いは検出抵抗Ｒｄが断線している状態とする。カップリングコンデンサＣｃから検知部４までの配線或いは検出抵抗Ｒｄのインピーダンスが通常よりも低い状態とは、例えば、カップリングコンデンサＣｃから検知部４までの配線或いは検出抵抗Ｒｄの両端が短絡している状態とする。 Further, the detection unit 4 determines whether or not the leakage detection circuit 1 is out of order by executing the failure determination process. The failure of the leakage detection circuit 1 means that the impedance of the wiring from the coupling capacitor Cc to the detection unit 4 or the detection resistor Rd is higher than normal, or the wiring from the coupling capacitor Cc to the detection unit 4 or the detection resistor Let the impedance of Rd be lower than normal. A state in which the impedance of the wiring from the coupling capacitor Cc to the detection unit 4 or the detection resistor Rd is higher than normal is, for example, a state in which the wiring from the coupling capacitor Cc to the detection unit 4 or the detection resistor Rd is disconnected. . A state in which the impedance of the wiring from the coupling capacitor Cc to the detection unit 4 or the detection resistor Rd is lower than normal is, for example, that the wiring from the coupling capacitor Cc to the detection unit 4 or both ends of the detection resistor Rd are short-circuited. state.
図３は、故障検知処理実行時の検知部４の動作の一例を示すフローチャートである。
まず、検知部４は、第１の状態になるようにスイッチＳＷの動作を制御する（ステップＳ１）。
FIG. 3 is a flow chart showing an example of the operation of the detection unit 4 during failure detection processing.
First, the detection unit 4 controls the operation of the switch SW so as to enter the first state (step S1).
次に、検知部４は、現在の浮遊容量Ｃｆの容量値ｃｆを求める（ステップＳ２）。例えば、検知部４は、記憶部３に記憶されている情報Ｄ２を参照し、発振回路２から浮遊容量検知用発振信号Ｓ２を出力させているときに検出抵抗Ｒｄにかかる電圧の波高値Ｖｄに対応する容量値ｃｆを、現在の浮遊容量Ｃｆの容量値ｃｆとする。 Next, the detection unit 4 obtains the current capacitance value cf of the floating capacitance Cf (step S2). For example, the detection unit 4 refers to the information D2 stored in the storage unit 3, and detects the peak value Vd of the voltage applied to the detection resistor Rd when the oscillation circuit 2 is outputting the floating capacitance detection oscillation signal S2. Let the corresponding capacitance value cf be the current capacitance value cf of the stray capacitance Cf.
次に、検知部４は、現在の浮遊容量Ｃｆの容量値ｃｆを用いて、情報Ｄ１を補正する（ステップＳ３）。例えば、検知部４は、図４（ａ）に示すように、現在の浮遊容量Ｃｆの容量値ｃｆ（今回の故障判定処理の実行時で求めた容量値ｃｆ）から前回の故障判定処理の実行時で求めた容量値ｃｆを減算した差に応じて、情報Ｄ１に示される各波高値Ｖｄをそれぞれ低下させることにより、情報Ｄ１を情報Ｄ１´に補正する。 Next, the detection unit 4 corrects the information D1 using the current capacitance value cf of the stray capacitance Cf (step S3). For example, as shown in FIG. 4A, the detection unit 4 executes the previous failure determination process from the current capacitance value cf of the stray capacitance Cf (capacitance value cf obtained when the current failure determination process is performed). The information D1 is corrected to the information D1' by lowering each peak value Vd indicated in the information D1 in accordance with the difference obtained by subtracting the capacitance value cf obtained at time.
次に、図３に示すフローチャートにおいて、検知部４は、故障判定用抵抗値を求める（ステップＳ４）。例えば、検知部４は、第１の状態になるようにスイッチＳＷの動作を制御しているとき、検出抵抗Ｒｄにかかる電圧の波高値Ｖｄとして波高値Ｖｄ３を取得する。次に、検知部４は、図４（ｂ）に示すように、補正後の情報Ｄ１´を参照して、波高値Ｖｄ３に対応する抵抗値ｒｉ３を故障判定用抵抗値とする。 Next, in the flowchart shown in FIG. 3, the detection unit 4 obtains a resistance value for failure determination (step S4). For example, the detection unit 4 acquires the peak value Vd3 as the peak value Vd of the voltage applied to the detection resistor Rd when controlling the operation of the switch SW so as to be in the first state. Next, as shown in FIG. 4B, the detection unit 4 refers to the corrected information D1′ and sets the resistance value ri3 corresponding to the crest value Vd3 as the resistance value for failure determination.
次に、図３に示すフローチャートにおいて、検知部４は、故障判定用波高値を求める（ステップＳ５）。例えば、検知部４は、図４（ｂ）に示すように、故障判定用抵抗値ｒｉ３と模擬絶縁抵抗Ｒｉ´の抵抗値との合成抵抗値ｒｉ１を求め、補正後の情報Ｄ１´を参照して、合成抵抗値ｒｉ１に対応する波高値Ｖｄ１を故障判定用波高値とする。なお、検知部４は、合成抵抗値＝１／（（１／故障判定用抵抗値）＋（１／模擬絶縁抵抗Ｒｉ´の抵抗値））を計算することにより合成抵抗値を求める。模擬絶縁抵抗Ｒｉ´の抵抗値は、記憶部３に記憶されているものとする。 Next, in the flowchart shown in FIG. 3, the detection unit 4 obtains a peak value for fault determination (step S5). For example, as shown in FIG. 4B, the detection unit 4 obtains a combined resistance value ri1 of the resistance value ri3 for failure judgment and the resistance value of the simulated insulation resistance Ri', and refers to the corrected information D1'. Then, the crest value Vd1 corresponding to the combined resistance value ri1 is set as the crest value for fault determination. Note that the detection unit 4 obtains the combined resistance value by calculating the combined resistance value=1/((1/resistance value for failure determination)+(1/resistance value of the simulated insulation resistance Ri′)). It is assumed that the resistance value of the simulated insulation resistance Ri' is stored in the storage unit 3. FIG.
次に、検知部４は、第２の状態になるようにスイッチＳＷの動作を制御する（ステップＳ６）。 Next, the detection unit 4 controls the operation of the switch SW so as to enter the second state (step S6).
次に、検知部４は、検出抵抗Ｒｄにかかる電圧の波高値Ｖｄを求める（ステップＳ７）。 Next, the detection unit 4 obtains the peak value Vd of the voltage applied to the detection resistor Rd (step S7).
次に、検知部４は、ステップＳ７で求めた波高値ＶｄがステップＳ５で求めた故障判定用波高値と異なっているか否かを判断する（ステップＳ８）。例えば、検知部４は、図４（ｂ）に示すように、故障判定用波高値Ｖｄ１に一定値Ｖｄαを加算した結果である閾値Ｖｄｔｈαを求めるとともに、故障判定用波高値Ｖｄ１から一定値Ｖｄβを減算した結果である閾値Ｖｄｔｈβを求める。次に、検知部４は、ステップＳ７で求めた波高値Ｖｄが閾値Ｖｄｔｈαより大きい、または、ステップＳ７で求めた波高値Ｖｄが閾値Ｖｄｔｈβより小さい場合、ステップＳ７で求めた波高値ＶｄがステップＳ５で求めた故障判定用波高値Ｖｄ１と異なっていると判断する。一方、検知部４は、ステップＳ７で求めた波高値Ｖｄが閾値Ｖｄｔｈα以下である場合で、かつ、ステップＳ７で求めた波高値Ｖｄが閾値Ｖｄｔｈβ以上である場合、ステップＳ７で求めた波高値ＶｄがステップＳ５で求めた故障判定用波高値Ｖｄ１と異なっていないと判断する。なお、一定値Ｖｄα及び一定値Ｖｄβは、互いに同じ値でもよいし、互いに異なる値でもよい。また、一定値Ｖｄα及び一定値Ｖｄβは、実験またはシミュレーションなどにより波高値Ｖｄの測定誤差などにより求めて記憶部３に記憶させておく。 Next, the detection unit 4 determines whether or not the peak value Vd obtained in step S7 is different from the failure determination peak value obtained in step S5 (step S8). For example, as shown in FIG. 4B, the detection unit 4 obtains a threshold value Vdthα that is the result of adding a constant value Vdα to the peak value Vd1 for failure determination, and calculates a constant value Vdβ from the peak value Vd1 for failure determination. A threshold value Vdthβ, which is the result of the subtraction, is obtained. Next, when the peak value Vd obtained in step S7 is larger than the threshold value Vdthα, or the peak value Vd obtained in step S7 is smaller than the threshold value Vdthβ, the detection unit 4 determines that the peak value Vd obtained in step S7 is equal to the threshold value Vdthβ in step S5. It is determined that it is different from the peak value Vd1 for fault determination obtained in . On the other hand, when the peak value Vd obtained in step S7 is equal to or less than the threshold value Vdthα and when the peak value Vd obtained in step S7 is equal to or greater than the threshold value Vdthβ, the detection unit 4 detects the peak value Vd obtained in step S7. is not different from the peak value Vd1 for failure judgment obtained in step S5. The constant value Vdα and the constant value Vdβ may be the same value or different values. Further, the constant value Vdα and the constant value Vdβ are obtained from the measurement error of the crest value Vd by experiments or simulations, and stored in the storage unit 3 .
次に、図３に示すフローチャートにおいて、検知部４は、ステップＳ７で求めた波高値ＶｄがステップＳ５で求めた故障判定用波高値と異なっている場合（ステップＳ８：Ｙｅｓ）、漏電検知回路１が故障していると判定し（ステップＳ９）、ステップＳ７で求めた波高値ＶｄがステップＳ５で求めた故障判定用波高値と異なっていない場合（ステップＳ８：Ｎｏ）、漏電検知回路１が故障していないと判定する（ステップＳ１０）。 Next, in the flowchart shown in FIG. 3, when the peak value Vd obtained in step S7 is different from the failure determination peak value obtained in step S5 (step S8: Yes), the detection unit 4 is faulty (step S9), and if the peak value Vd obtained in step S7 is not different from the fault determination peak value obtained in step S5 (step S8: No), the leakage detection circuit 1 is faulty It is determined that it is not (step S10).
なお、ステップＳ２、Ｓ３を省略してもよい。このように構成する場合、検知部４は、補正していない情報Ｄ１を参照して、故障判定用抵抗値や故障判定用波高値を求める。 Note that steps S2 and S3 may be omitted. In this configuration, the detection unit 4 refers to the uncorrected information D1 to obtain the failure determination resistance value and the failure determination peak value.
漏電検知回路１が故障していない場合、絶縁抵抗Ｒｉと模擬絶縁抵抗Ｒｉ´とが互いに並列接続されているときに検出抵抗Ｒｄにかかる電圧の波高値Ｖｄは、絶縁抵抗Ｒｉと模擬絶縁抵抗Ｒｉ´とが互いに並列接続されていないときに検出抵抗Ｒｄにかかる電圧の波高値Ｖｄに対応する抵抗値である故障判定用抵抗値と模擬絶縁抵抗Ｒｉ´の抵抗値との合成抵抗値に対応する波高値である故障判定用波高値と同じになると想定される。そのため、検出抵抗Ｒｄのインピーダンスが下がるなど漏電検知回路１が故障している場合、絶縁抵抗Ｒｉと模擬絶縁抵抗Ｒｉ´とが互いに並列接続されているときに検出抵抗Ｒｄにかかる電圧の波高値Ｖｄは、故障判定用波高値と異なると想定される。 If the leakage detection circuit 1 is not malfunctioning, the peak value Vd of the voltage applied to the detection resistor Rd when the insulation resistance Ri and the simulated insulation resistance Ri' are connected in parallel to each other is equal to the insulation resistance Ri and the simulated insulation resistance Ri ' corresponds to the combined resistance value of the resistance value for fault determination, which is the resistance value corresponding to the peak value Vd of the voltage applied to the detection resistor Rd when R' is not connected in parallel to the detection resistor Rd, and the resistance value of the simulated insulation resistor Ri'. It is assumed that it will be the same as the peak value for failure determination. Therefore, if the leakage detection circuit 1 fails, such as when the impedance of the detection resistor Rd is lowered, the peak value Vd of the voltage applied to the detection resistor Rd when the insulation resistance Ri and the simulated insulation resistance Ri' are connected in parallel to each other is assumed to be different from the crest value for fault determination.
そこで、実施形態の漏電検知回路１では、絶縁抵抗Ｒｉと模擬絶縁抵抗Ｒｉ´とが互いに並列接続されるようにスイッチＳＷの動作を制御しているときに検出抵抗Ｒｄにかかる電圧の波高値Ｖｄが故障判定用波高値と異なる場合、漏電検知回路１が故障していると判定する。これにより、実施形態の漏電検知回路１は、自身が故障していると判定することができる。 Therefore, in the earth leakage detection circuit 1 of the embodiment, when the operation of the switch SW is controlled so that the insulation resistance Ri and the simulated insulation resistance Ri' are connected in parallel, the peak value Vd of the voltage applied to the detection resistance Rd is is different from the peak value for fault determination, it is determined that the leakage detection circuit 1 is faulty. As a result, the leakage detection circuit 1 of the embodiment can determine that it is out of order.
また、浮遊容量Ｃｆの容量値ｃｆが増加すると、検出抵抗Ｒｄにかかる電圧の波高値Ｖｄが低下する。 Further, when the capacitance value cf of the stray capacitance Cf increases, the peak value Vd of the voltage applied to the detection resistor Rd decreases.
そこで、実施形態の漏電検知回路１では、浮遊容量Ｃｆの容量値ｃｆにより情報Ｄ１を補正している。これにより、浮遊容量Ｃｆの容量値ｃｆの増加に伴って波高値Ｖｄが低下してしまっても、故障判定用抵抗値や故障判定用波高値を適切に求めていることができるため、漏電検知回路１の故障判定精度を向上させることができる。 Therefore, in the leakage detection circuit 1 of the embodiment, the information D1 is corrected by the capacitance value cf of the stray capacitance Cf. As a result, even if the peak value Vd decreases with an increase in the capacitance value cf of the stray capacitance Cf, the failure determination resistance value and the failure determination peak value can be obtained appropriately. Failure determination accuracy of the circuit 1 can be improved.
また、本発明は、以上の実施の形態に限定されるものでなく、本発明の要旨を逸脱しない範囲内で種々の改良、変更が可能である。 Moreover, the present invention is not limited to the above embodiments, and various improvements and modifications are possible without departing from the gist of the present invention.
１ 漏電検知回路
２ 発振回路
３ 記憶部
４ 検知部
Ｐ 直流電源
Ｌｏ 負荷
ＧＬ グランドライン
ＢＥ ボディアース
Ｒｉ 絶縁抵抗
Ｃｆ 浮遊容量
Ｃｃ カップリングコンデンサ
Ｒｄ 検出抵抗
Ｒｉ´ 模擬絶縁抵抗
ＳＷ スイッチ
1 earth leakage detection circuit 2 oscillation circuit 3 storage unit 4 detection unit P DC power source Lo load GL ground line BE body ground Ri insulation resistance Cf stray capacitance Cc coupling capacitor Rd detection resistance Ri' simulated insulation resistance SW switch
Claims (2)
発振信号を出力する発振回路と、
前記発振回路と前記グランドラインに接続されるカップリングコンデンサとの間に接続される検出抵抗と、
模擬絶縁抵抗と、
前記絶縁抵抗と前記模擬絶縁抵抗とが互いに並列接続されていない第１の状態、及び、前記絶縁抵抗と前記模擬絶縁抵抗とが互いに並列接続されている第２の状態のどちらか一方の状態に切り替えるスイッチと、
前記第１の状態になるように前記スイッチの動作を制御しているとき、前記検出抵抗にかかる電圧の波高値が閾値以下である場合、前記絶縁抵抗の抵抗値が低下していることを検知する検知部と、
当該漏電検知回路が故障していないときの前記絶縁抵抗の抵抗値と前記検出抵抗にかかる電圧の波高値との対応関係を示す情報を記憶する記憶部と、
を備え、
前記検知部は、
前記第１の状態になるように前記スイッチの動作を制御しているとき、前記情報を参照して、前記検出抵抗にかかる電圧の波高値に対応する抵抗値を故障判定用抵抗値とし、
前記情報を参照して、前記故障判定用抵抗値と前記模擬絶縁抵抗の抵抗値との合成抵抗値に対応する波高値を故障判定用波高値とし、
前記第２の状態になるように前記スイッチの動作を制御しているとき、前記検出抵抗にかかる電圧の波高値が前記故障判定用波高値と異なる場合、当該漏電検知回路が故障していると判定する
ことを特徴とする漏電検知回路。 A leakage detection circuit for detecting a decrease in the resistance value of an insulation resistance between a ground line of a DC power supply mounted on a vehicle and a body ground of the vehicle,
an oscillation circuit that outputs an oscillation signal;
a detection resistor connected between the oscillation circuit and a coupling capacitor connected to the ground line;
a simulated insulation resistance;
a first state in which the insulation resistance and the simulated insulation resistance are not connected in parallel; and a second state in which the insulation resistance and the simulated insulation resistance are connected in parallel. switch to switch and
When the peak value of the voltage applied to the detection resistor is equal to or less than a threshold value when the operation of the switch is controlled so as to be in the first state, it is detected that the resistance value of the insulation resistor has decreased. a detection unit that
a storage unit that stores information indicating a correspondence relationship between the resistance value of the insulation resistor and the peak value of the voltage applied to the detection resistor when the leakage detection circuit is not malfunctioning;
with
The detection unit is
When the operation of the switch is controlled so as to be in the first state, referring to the information, the resistance value corresponding to the peak value of the voltage applied to the detection resistor is set as the failure determination resistance value;
By referring to the information, a peak value corresponding to a combined resistance value of the resistance value for failure determination and the resistance value of the simulated insulation resistance is set as a peak value for failure determination,
When the peak value of the voltage applied to the detection resistor is different from the peak value for fault determination when the operation of the switch is controlled so as to be in the second state, it is determined that the leakage detection circuit is faulty. A leakage detection circuit characterized by:
前記検知部は、前記絶縁抵抗に並列接続される浮遊容量の容量値を求め、その求めた容量値により前記情報を補正する
ことを特徴とする漏電検知回路。
The earth leakage detection circuit according to claim 1,
The leakage detection circuit, wherein the detection unit obtains a capacitance value of a stray capacitance connected in parallel with the insulation resistor, and corrects the information based on the obtained capacitance value.
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| WO2010143534A1 (en) | 2009-06-12 | 2010-12-16 | 日産自動車株式会社 | Connection diagnostic device for ground fault detector |
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