JP7127693B2 - 電界効果トランジスタ - Google Patents
電界効果トランジスタ Download PDFInfo
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- JP7127693B2 JP7127693B2 JP2020551011A JP2020551011A JP7127693B2 JP 7127693 B2 JP7127693 B2 JP 7127693B2 JP 2020551011 A JP2020551011 A JP 2020551011A JP 2020551011 A JP2020551011 A JP 2020551011A JP 7127693 B2 JP7127693 B2 JP 7127693B2
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- 230000005669 field effect Effects 0.000 title claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 238000010586 diagram Methods 0.000 description 24
- 230000002123 temporal effect Effects 0.000 description 11
- 230000005684 electric field Effects 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 6
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/183—Indexing scheme relating to amplifiers the amplifier comprising a gated diode
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図1は、実施の形態1に係る電界効果トランジスタを示す断面図である。図2は、実施の形態1に係る電界効果トランジスタを示す等価回路図である。この電界効果トランジスタは、高周波信号を増幅するノーマリーオンの高電子移動度トランジスタである。
図13は、実施の形態2に係る電界効果トランジスタを示す断面図である。実施の形態1ではダイオード8の解放状態と短絡状態の切り替わりは、ダイオード8の特性、すなわちダイオード8の立ち上がり電圧によって決まる。用意したダイオード8によっては、その立ち上がり電圧が高電子移動度トランジスタに適さない場合がありうる。そこで、本実施の形態では、ダイオード8のアノードを、グランドではなく、直流電圧を印加したDCパッド9に接続する。
図14は、実施の形態3に係る電界効果トランジスタを示す断面図である。ダイオード8のアノードとカソードにそれぞれ整合回路10,11が接続されている。整合回路10,11は、キャパシタ、インダクタ、抵抗、信号線路などから成る。
Claims (5)
- 半導体基板と、
前記半導体基板の表面に形成されたゲート電極、ソース電極及びドレイン電極と、
前記ゲート電極と前記ドレイン電極との間の領域において前記半導体基板の表面を覆う絶縁膜と、
前記絶縁膜の上に形成され、前記ドレイン電極に接続されていないソースフィールドプレートと、
カソードが前記ソースフィールドプレートと接続され、アノードが定電位であるダイオードとを備え、
前記半導体基板はGaN基板上にAlGaN層を形成したものであり、
前記ゲート電極と前記ソースフィールドプレートとの最短距離が1μm以下であることを特徴とする電界効果トランジスタ。 - 前記ダイオードの前記アノードは、前記ソース電極、又はグランド電位を持ったグランドパッドに接続されていることを特徴とする請求項1に記載の電界効果トランジスタ。
- 前記ダイオードの前記アノードは、外部から直流電圧を印加したDCパッドに接続されていることを特徴とする請求項1に記載の電界効果トランジスタ。
- 前記ダイオードはショットキーダイオード又はPNダイオードであることを特徴とする請求項1~3の何れか1項に記載の電界効果トランジスタ。
- 前記ダイオードの前記アノード又は前記カソードに接続された整合回路を更に備えることを特徴とする請求項1~4の何れか1項に記載の電界効果トランジスタ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/037059 WO2020070831A1 (ja) | 2018-10-03 | 2018-10-03 | 電界効果トランジスタ |
Publications (2)
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JPWO2020070831A1 JPWO2020070831A1 (ja) | 2021-09-02 |
JP7127693B2 true JP7127693B2 (ja) | 2022-08-30 |
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JP2020551011A Active JP7127693B2 (ja) | 2018-10-03 | 2018-10-03 | 電界効果トランジスタ |
Country Status (6)
Country | Link |
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US (1) | US11424330B2 (ja) |
JP (1) | JP7127693B2 (ja) |
CN (1) | CN112753104B (ja) |
DE (1) | DE112018008049T5 (ja) |
TW (1) | TWI722571B (ja) |
WO (1) | WO2020070831A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007273795A (ja) | 2006-03-31 | 2007-10-18 | Sanken Electric Co Ltd | 複合半導体装置 |
WO2008069074A1 (ja) | 2006-12-07 | 2008-06-12 | Kabushiki Kaisha Toshiba | 半導体装置及び半導体装置の製造方法 |
WO2013027722A1 (ja) | 2011-08-22 | 2013-02-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2013089970A (ja) | 2011-10-20 | 2013-05-13 | Triquint Semiconductor Inc | 第iii族金属窒化物−絶縁半導体ヘテロ構造電界効果トランジスタ |
JP2015228508A (ja) | 2004-05-11 | 2015-12-17 | クリー インコーポレイテッドCree Inc. | ソース接続フィールドプレートを備えるワイドバンドギャップhemt |
JP2016515307A (ja) | 2013-03-13 | 2016-05-26 | トランスフォーム インコーポレーテッド | エンハンスメントモードiii族窒化物デバイス |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4810072B2 (ja) * | 2004-06-15 | 2011-11-09 | 株式会社東芝 | 窒素化合物含有半導体装置 |
US8114717B2 (en) * | 2005-11-15 | 2012-02-14 | The Regents Of The University Of California | Methods to shape the electric field in electron devices, passivate dislocations and point defects, and enhance the luminescence efficiency of optical devices |
JP2010199241A (ja) * | 2009-02-24 | 2010-09-09 | Fujitsu Ltd | 半導体装置 |
IT1401748B1 (it) * | 2010-08-02 | 2013-08-02 | Selex Sistemi Integrati Spa | Transistori ad alta mobilita' elettronica con elettrodo di field plate |
JP5703829B2 (ja) * | 2011-02-24 | 2015-04-22 | サンケン電気株式会社 | 半導体装置 |
TW201411809A (zh) * | 2012-09-05 | 2014-03-16 | Silicongear Corp | 功率型金氧半場效電晶體元件 |
US9543292B2 (en) * | 2015-02-27 | 2017-01-10 | Alpha And Omega Semiconductor Incorporated | Field effect transistor with integrated Zener diode |
JP2017005139A (ja) | 2015-06-11 | 2017-01-05 | 三菱電機株式会社 | トランジスタ |
US9911817B2 (en) * | 2015-07-17 | 2018-03-06 | Cambridge Electronics, Inc. | Field-plate structures for semiconductor devices |
CN106298882B (zh) * | 2016-08-04 | 2019-10-08 | 苏州能讯高能半导体有限公司 | 高电子迁移率晶体管器件及其制造方法 |
US10700188B2 (en) * | 2017-11-02 | 2020-06-30 | Rohm Co., Ltd. | Group III nitride semiconductor device with first and second conductive layers |
-
2018
- 2018-10-03 US US17/054,134 patent/US11424330B2/en active Active
- 2018-10-03 DE DE112018008049.8T patent/DE112018008049T5/de not_active Withdrawn
- 2018-10-03 CN CN201880095573.3A patent/CN112753104B/zh active Active
- 2018-10-03 WO PCT/JP2018/037059 patent/WO2020070831A1/ja active Application Filing
- 2018-10-03 JP JP2020551011A patent/JP7127693B2/ja active Active
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2019
- 2019-09-17 TW TW108133360A patent/TWI722571B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015228508A (ja) | 2004-05-11 | 2015-12-17 | クリー インコーポレイテッドCree Inc. | ソース接続フィールドプレートを備えるワイドバンドギャップhemt |
JP2007273795A (ja) | 2006-03-31 | 2007-10-18 | Sanken Electric Co Ltd | 複合半導体装置 |
WO2008069074A1 (ja) | 2006-12-07 | 2008-06-12 | Kabushiki Kaisha Toshiba | 半導体装置及び半導体装置の製造方法 |
WO2013027722A1 (ja) | 2011-08-22 | 2013-02-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2013089970A (ja) | 2011-10-20 | 2013-05-13 | Triquint Semiconductor Inc | 第iii族金属窒化物−絶縁半導体ヘテロ構造電界効果トランジスタ |
JP2016515307A (ja) | 2013-03-13 | 2016-05-26 | トランスフォーム インコーポレーテッド | エンハンスメントモードiii族窒化物デバイス |
Also Published As
Publication number | Publication date |
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US11424330B2 (en) | 2022-08-23 |
TWI722571B (zh) | 2021-03-21 |
CN112753104A (zh) | 2021-05-04 |
US20210126093A1 (en) | 2021-04-29 |
DE112018008049T5 (de) | 2021-06-17 |
CN112753104B (zh) | 2024-02-23 |
JPWO2020070831A1 (ja) | 2021-09-02 |
WO2020070831A1 (ja) | 2020-04-09 |
TW202015133A (zh) | 2020-04-16 |
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