CN107768441B - 垂直双栅场效应晶体管及自钳位防击穿射频放大器 - Google Patents
垂直双栅场效应晶体管及自钳位防击穿射频放大器 Download PDFInfo
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Abstract
本发明公开了一种垂直双栅场效应晶体管及自钳位防击穿射频放大器,晶体管包括衬底、沟道层和势垒层,在势垒层的上方设有源极和漏极;垂直双栅包括远栅极和近栅极,近栅极与其覆盖的半导体形成肖特基接触,远栅极覆盖在近栅极上,且两者通过绝缘栅介质隔离;自钳位防击穿的射频放大器采用共源极放大结构,其射频信号输入端与连接远栅极,射频信号输出端连接漏极;晶体管的源极接地,远栅极和漏极的偏置电压由偏置网络提供;本发明较外围冗余电路防护的方法有优势;可有效防止相关晶体管在射频大信号工作时漏极电压过高导致的晶体管击穿、烧毁和失效等问题;在微波射频应用中,可以有效地避免晶体管击穿、烧毁和失效导致的设备、系统故障等问题。
Description
技术领域
本发明涉及射频放大电路,尤其涉及一种基于双栅结构的半导体高电子迁移率晶体管,同时还涉及具有该垂直双栅场效应晶体管结构的自钳位防击穿射频放大器。
背景技术
在微波、射频功率放大应用中,基于Si/SiGe、GaAs、InP、GaN等材料的双极型晶体管、场效应晶体管是有源放大器件的主流技术,它们因各自的特点在不同应用领域各有一席之地。Si基微波功率器件如Si LDMOS成本低,但频率特性差,主要应用于C波段以下应用,如通信基站;SiGe基、InP基微波功率器件如SiGe HBT,InP HEMT功率密度小但频率特性好,在低噪声放大电路、毫米波放大电路中有较多应用;GaAs是第二代半导体的代表,GaAs基微波功率器件如GaAs HEMT在雷达收发阵列、通信终端等方面有重要应用;GaN是第三代半导体的代表,GaN基微波功率器件如GaN HEMT具有击穿电压高、电流密度大、频率特性好、温度特性好的综合优势,在微波射频应用中表现出更高的性能和可靠性,GaN HEMT在雷达收发阵列、电子战、通信等多个领域迅速地取代传统器件。
在微波射频应用中,用于信号功率放大的晶体管的击穿、烧毁是一种较常见的失效模式,给系统、设备的稳定性、可靠性带来隐患。通过外围冗余电路对设备、系统进行器件击穿、烧毁的防护是一种有效地方法,但增加了设计和系统本身的复杂程度。
发明内容
发明目的:针对现有技术存在的问题,本发明的第一目的是提供一种基于双栅结构的半导体高电子迁移率晶体管结构,本发明的第二目的是提供具有该晶体管结构的自钳位防击穿射频放大器。
技术方案:一种基于垂直双栅的场效应晶体管,包括衬底、沟道层和势垒层,在所述势垒层的上方设有源极和漏极;所述垂直双栅包括远栅极和近栅极,所述近栅极与其覆盖的半导体形成肖特基接触,所述远栅极覆盖在近栅极上,且两者通过绝缘栅介质隔离。
优选的,所述源极和远栅极之间、远栅极和漏极之间,均设有器件钝化介质。
所述近栅极为格栅形式,其沿栅长方向分割为多个栅金属条;通过调整和优化格栅及其间距的尺寸来调整场效应晶体管的电压-电流特性。
所述栅金属条及其间距的尺寸范围均为0.01微米到0.5微米。
进一步优选,所述射频信号输入端设有正向限幅二极管;所述半导体高电子迁移率晶体管采用GAN、GaAs或者InP;所述衬底选用SiC、Si或者蓝宝石;所述势垒层采用本征AlGaN或InAlN;所述绝缘栅介质根据介质介电强度和介电常数的要求采用HfO2、Al2O3或Si3N4。
利用所述场效应晶体管实现自钳位防击穿的射频放大器,采用共源极放大结构,该共源极放大结构包括射频信号输入端、射频信号输出端和偏置网络;所述射频信号输入端与所述场效应晶体管的远栅极连接,所述射频信号输出端与所述场效应晶体管的漏极连接;所述场效应晶体管的源极接地,所述远栅极和漏极的偏置电压由偏置网络提供。
有益效果:和现有技术相比,本发明具有如下显著优势:1、较外围冗余电路防护的方法有优势;2、可以有效防止相关晶体管在射频大信号工作时漏极电压过高导致的晶体管击穿、烧毁和失效等问题;3、在微波射频应用中,采用本发明可以有效地避免晶体管击穿、烧毁和失效导致的设备、系统故障等问题。
附图说明
图1为采用垂直双栅结构的GaN HEMT的器件结构示意图;
图2为格栅形式的垂直双栅结构晶体管结构示意图;
图3为本发明的共源极放大结构示意图。
具体实施方式
下面结合实施例和附图对本发明的技术方案作进一步详细说明。
如图1所示,本实施例的垂直双栅结构GaN高电子迁移率晶体管(HEMT),101为衬底,优选SiC、Si或者蓝宝石;102为沟道层,优选本征GaN或InGaN(衬底与沟道层之间的成核层、缓冲层未在图中示出);103为势垒层,优选本征AlGaN或InAlN;104为源极、109为漏极;105为绝缘栅介质,可根据对介质介电强度和介电常数的要求选择HfO2、Al2O3、Si3N4等不同介质,绝缘栅介质的淀积方式包括化学气相淀积、磁控溅射、原子层淀积等,绝缘栅介质的厚度根据器件对栅泄露电流、跨导的指标要求确定;106为远栅极,远栅极金属可采用高电导率的Au、Cu等,输入信号通过远栅极进入器件;107为近栅极,可以采用与GaN HEMT相同的栅金属,如Ni/Au;远栅极106和近栅极107的长度可以不同,例如当远栅极近漏端长度超过近栅极时可以有效地避免近栅极电压被漏极电压锁定,不同源栅极、近栅极长度下器件表现出不同的电压-电流特性;108为器件钝化介质,可以为Si3N4、有机聚合物等。
图2所示为第二种双栅结构GaN高电子迁移率晶体管结构的示意图,与图1中双栅结构的GaN高电子迁移率晶体管结构不同的是,它的近栅极107采用格栅形式,整个近栅极沿栅长方向分割为多个栅金属条,格栅及其间距的尺寸选取0.01微米到0.5微米。由于格栅及其间距尺寸会影响器件的电压-电流特性,可以对各栅条的宽度和间距进行优化设置,即通过调整和优化这些尺寸和间距来调整器件电压-电流特性以达到特定的工程项目设计需要,以避免近栅极电压被漏极电压锁定、调整器件电压-电流特性。
本发明中,远栅极106和近栅极107的典型长度是0.1-1微米;栅源间距典型值是0.5-2微米;栅漏间距典型值是1-4微米。
基于上述两种垂直双栅结构的GaN HMET的器件,本发明进一步提出一种微波、射频用自钳位防击穿场效应晶体管结构,来实现微波射频场效应晶体管漏极电压自钳位防击穿。
如图3所示,采用共源极放大结构,其中201为射频信号输入端,它连接到晶体管器件的远栅极106;202为射频信号输出端,它连接到晶体管器件的漏极109;晶体管器件的源极104接地;远栅极106和漏极109的偏置电压由偏置网络203提供;当输入端201有射频信号注入时,晶体管栅极、漏极都产生一定的电压摆幅,当栅极电压摆幅过大导致近栅极正向电压接近或超过近栅极-势垒层构成的肖特基势垒高度时,近栅极下势垒层中产生可观的正向热电子发射(TE)电流并对近栅极充负电;当漏极电压摆幅过大导致漏极电压接近击穿电压时,近栅极下势垒层中产生可观的热电子场发射(TFE)泄漏电流并对近栅极充正电;根据器件物理模型的分析,上述两种情形下,近栅极充放电时间常数可低至1ns;除上述两种情形外,近栅极下势垒层泄漏电流微弱,其对近栅极充放电时间常数约为1ms,在脉冲宽度为μs量级脉冲工作的射频放大电路应用中,这种相对慢速的近栅极充放电的影响可以忽略。如图3所示,在器件输入端设置的正向限幅二极管204可以限制器件栅极的正向电压幅度,从而抑制近栅极充负电,此时器件只在高漏电压情形下发生近栅极充放电,高漏电压导致近栅极充正电导致近栅极电压增大,器件源漏电流增加,器件源漏电流增加导致流向负载的电流减小或者从负载抽取的电流增加,导致信号输出端即器件漏极电压降低,可见上述过程可以实现对器件射频工作下漏极过高电压的负反馈,达到抑制器件漏极电压过高导致的击穿、烧毁和失效。
Claims (8)
1.一种基于垂直双栅的场效应晶体管,包括衬底(101)、沟道层(102)和势垒层(103),其特征在于:在所述势垒层(103)的上方设有源极(104)和漏极(109);所述垂直双栅包括远栅极(106)和近栅极(107),所述近栅极(107)与其覆盖的半导体形成肖特基接触,所述远栅极(106)覆盖在近栅极(107)上,且两者通过绝缘栅介质(105)隔离;所述近栅极(106)为格栅形式,其沿栅长方向分割为多个栅金属条,所述栅金属条及其间距的尺寸范围均为0.01微米到0.5微米。
2.根据权利要求1所述的场效应晶体管,其特征在于:所述源极(104)和远栅极(106)之间、远栅极(106)和漏极(109)之间,均设有器件钝化介质(108)。
3.根据权利要求1所述的场效应晶体管,其特征在于:所述场效应晶体管采用GAN、GaAs或者InP。
4.根据权利要求1所述的场效应晶体管,其特征在于:所述衬底(101)选用SiC、Si或者蓝宝石。
5.根据权利要求1所述的场效应晶体管,其特征在于:所述势垒层(103)采用本征AlGaN或InAlN。
6.根据权利要求1所述的场效应晶体管,其特征在于:所述绝缘栅介质(105)根据介质介电强度和介电常数的要求采用HfO2、Al2O3或Si3N4。
7.一种利用权利要求1-6任一所述的场效应晶体管实现自钳位防击穿的射频放大器,其特征在于:采用共源极放大结构,该共源极放大结构包括射频信号输入端(201)、射频信号输出端(202)和偏置网络(203);所述射频信号输入端(201)与所述场效应晶体管的远栅极(106)连接,所述射频信号输出端(202)与所述场效应晶体管的漏极(109)连接;所述场效应晶体管的源极(104)接地,所述远栅极(106)和漏极(109)的偏置电压由偏置网络(203)提供。
8.根据权利要求7所述的自钳位防击穿的射频放大器,其特征在于:所述射频信号输入端(201)设有正向限幅二极管。
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0.5μm栅长HfO2栅介质的GaN金属氧化物半导体高电子迁移率晶体管;韩克锋;《西安交通大学学报》;20170511;第51卷(第8期);第72-76页 * |
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