JP7118516B2 - 性能改善された抽出セット - Google Patents
性能改善された抽出セット Download PDFInfo
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- JP7118516B2 JP7118516B2 JP2020551505A JP2020551505A JP7118516B2 JP 7118516 B2 JP7118516 B2 JP 7118516B2 JP 2020551505 A JP2020551505 A JP 2020551505A JP 2020551505 A JP2020551505 A JP 2020551505A JP 7118516 B2 JP7118516 B2 JP 7118516B2
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- 238000000605 extraction Methods 0.000 title claims description 147
- 230000006835 compression Effects 0.000 claims description 7
- 238000007906 compression Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 description 73
- 230000013011 mating Effects 0.000 description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 229910010293 ceramic material Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/024—Moving components not otherwise provided for
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/061—Construction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/065—Source emittance characteristics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/0817—Microwaves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electron Sources, Ion Sources (AREA)
- Plasma Technology (AREA)
Description
Claims (4)
- 加工対象物処理システムと共に使用される抽出プレートであって、
イオン源チャンバに取り付けられるように適合された後面及び前面を有し、幅及び高さを有する抽出開孔を有し、前記前面が、前記イオン源チャンバから離れるように向いており、前記後面が前記イオン源チャンバ内に配置されているプレート、
前記抽出プレートに近接して配置され、2つの端部を有し、前記2つの端部が、前記後面の幅方向において前記抽出開孔の両側に配置されたそれぞれの取り付けポイントで適所に保持されるブロッカ、並びに
前記プレートの前記後面に取り付けられ、前記ブロッカの前記2つの端部をカバーするブロッカホルダを備える、抽出プレート。 - 各取り付けポイントが、前記後面から離れるように延在し且つ前記幅方向に延在する2つのガイドレールを備え、前記2つのガイドレールは、それぞれが貫通する孔を有し、前記2つのガイドレール内の各孔は、前記ブロッカホルダのそれぞれの側部内の対応する孔と整列し、ピンが、前記ブロッカホルダ内の前記孔及び前記2つのガイドレール内のそれぞれの前記孔を貫通して、前記ブロッカホルダを適所に保持する、請求項1に記載の抽出プレート。
- 前記ブロッカの前記2つの端部のそれぞれが、間に開口部を有する2つのプロングで終端し、突起が、前記取り付けポイントに近接して配置され、前記突起が、前記ブロッカのそれぞれの端部内の前記開口部を満たし、前記ブロッカを前記プレートに整列させるように働く、請求項1に記載の抽出プレート。
- 前記ブロッカを前記プレートに向けて押し付けるために、前記ブロッカホルダと前記ブロッカとの間に配置された圧縮デバイスを更に備える、請求項1に記載の抽出プレート。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022035903A JP7303918B2 (ja) | 2018-03-27 | 2022-03-09 | 性能改善された抽出セット |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/937,181 US10325752B1 (en) | 2018-03-27 | 2018-03-27 | Performance extraction set |
US15/937,181 | 2018-03-27 | ||
PCT/US2019/018877 WO2019190659A1 (en) | 2018-03-27 | 2019-02-21 | Improved performance extraction set |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022035903A Division JP7303918B2 (ja) | 2018-03-27 | 2022-03-09 | 性能改善された抽出セット |
Publications (2)
Publication Number | Publication Date |
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JP2021519494A JP2021519494A (ja) | 2021-08-10 |
JP7118516B2 true JP7118516B2 (ja) | 2022-08-16 |
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JP2020551505A Active JP7118516B2 (ja) | 2018-03-27 | 2019-02-21 | 性能改善された抽出セット |
JP2022035903A Active JP7303918B2 (ja) | 2018-03-27 | 2022-03-09 | 性能改善された抽出セット |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2022035903A Active JP7303918B2 (ja) | 2018-03-27 | 2022-03-09 | 性能改善された抽出セット |
Country Status (6)
Country | Link |
---|---|
US (1) | US10325752B1 (ja) |
JP (2) | JP7118516B2 (ja) |
KR (1) | KR102421640B1 (ja) |
CN (1) | CN111902906B (ja) |
TW (2) | TWI761866B (ja) |
WO (1) | WO2019190659A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11145496B2 (en) * | 2018-05-29 | 2021-10-12 | Varian Semiconductor Equipment Associates, Inc. | System for using O-rings to apply holding forces |
US11495430B2 (en) * | 2020-07-15 | 2022-11-08 | Applied Materials, Inc. | Tunable extraction assembly for wide angle ion beam |
US11810746B2 (en) * | 2021-09-13 | 2023-11-07 | Applied Materials, Inc. | Variable thickness ion source extraction plate |
US20230197422A1 (en) * | 2021-12-20 | 2023-06-22 | Applied Materials, Inc. | Fastening assembly for beam blocker in ion processing apparatus |
US11961696B1 (en) * | 2022-10-28 | 2024-04-16 | Ion Technology Solutions, Llc | Ion source cathode |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US20160093409A1 (en) | 2014-09-30 | 2016-03-31 | Sang Ki Nam | Guard aperture to control ion angular distribution in plasma processing |
US20170025252A1 (en) | 2015-07-24 | 2017-01-26 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques to treat substrates using directional plasma and point of use chemistry |
JP2017533542A (ja) | 2014-09-10 | 2017-11-09 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | 隠れ偏向電極を用いるイオンビームのイオン角度分布の制御 |
US20180076007A1 (en) | 2016-09-12 | 2018-03-15 | Varian Semiconductor Equipment Associates, Inc. | Angle Control For Radicals And Reactive Neutral Ion Beams |
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2018
- 2018-03-27 US US15/937,181 patent/US10325752B1/en active Active
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2019
- 2019-02-21 KR KR1020207030650A patent/KR102421640B1/ko active IP Right Grant
- 2019-02-21 WO PCT/US2019/018877 patent/WO2019190659A1/en active Application Filing
- 2019-02-21 CN CN201980021401.6A patent/CN111902906B/zh active Active
- 2019-02-21 JP JP2020551505A patent/JP7118516B2/ja active Active
- 2019-03-11 TW TW109121154A patent/TWI761866B/zh active
- 2019-03-11 TW TW108107952A patent/TWI718491B/zh active
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- 2022-03-09 JP JP2022035903A patent/JP7303918B2/ja active Active
Patent Citations (4)
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JP2017533542A (ja) | 2014-09-10 | 2017-11-09 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | 隠れ偏向電極を用いるイオンビームのイオン角度分布の制御 |
US20160093409A1 (en) | 2014-09-30 | 2016-03-31 | Sang Ki Nam | Guard aperture to control ion angular distribution in plasma processing |
US20170025252A1 (en) | 2015-07-24 | 2017-01-26 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques to treat substrates using directional plasma and point of use chemistry |
US20180076007A1 (en) | 2016-09-12 | 2018-03-15 | Varian Semiconductor Equipment Associates, Inc. | Angle Control For Radicals And Reactive Neutral Ion Beams |
Also Published As
Publication number | Publication date |
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WO2019190659A1 (en) | 2019-10-03 |
JP2022084724A (ja) | 2022-06-07 |
KR102421640B1 (ko) | 2022-07-15 |
JP2021519494A (ja) | 2021-08-10 |
TW202046364A (zh) | 2020-12-16 |
JP7303918B2 (ja) | 2023-07-05 |
TW201942934A (zh) | 2019-11-01 |
CN111902906A (zh) | 2020-11-06 |
US10325752B1 (en) | 2019-06-18 |
KR20200125753A (ko) | 2020-11-04 |
TWI718491B (zh) | 2021-02-11 |
TWI761866B (zh) | 2022-04-21 |
CN111902906B (zh) | 2023-09-19 |
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