JP7116367B2 - ion implanter - Google Patents

Description

The present invention relates to an ion implanter, and more particularly to an ion implanter equipped with a crystallographic axis measuring device for measuring the direction of the crystallographic axis of a substrate using X-rays.

2. Description of the Related Art Generally, in an ion implantation apparatus used in a semiconductor manufacturing process or the like, an ion implantation process is performed by irradiating a substrate with an ion beam in a processing chamber whose interior is kept in a vacuum state. Further, when ion implantation is performed on a single-crystal substrate such as a silicon wafer or a silicon carbide wafer, the ion beam irradiation direction to the substrate may be controlled in order to perform ion implantation using channeling. .
As an ion implantation method that considers such channeling, the method disclosed in Patent Document 1 is known.

Patent Document 1 discloses a method of subjecting a silicon carbide wafer to an ion implantation process. In Patent Document 1, channeling occurs when the irradiation direction of the ion beam with respect to the substrate is within about 2° from the crystal axis of silicon carbide, and the angle formed by the crystal axis and the irradiation direction of the ion beam is within a predetermined range. It is described that ions can be implanted to a deeper depth in the substrate by fitting the substrate into the substrate.
In addition, when ion implantation is performed at a high temperature such as 500° C., the depth to which ions can reach from the substrate surface becomes significantly shallower than when ion implantation is performed at room temperature. is described.
In other words, Patent Document 1 discloses channeling implantation that uses channeling to control the depth of ion implantation. It has been shown that the depth of ion implantation can be controlled by varying the temperature of the substrate.

Further, as an ion implanter for controlling the irradiation direction of an ion beam to a substrate, an ion implanter disclosed in Japanese Patent Application Laid-Open No. 2002-200002 is known. The ion implantation apparatus of Patent Document 2 is used when ion implantation is performed on a single crystal substrate such as a silicon wafer, and includes a plane orientation measuring mechanism for measuring the plane orientation of the substrate using X-rays, and a measured plane orientation. It has a mechanism for performing alignment based on the plane orientation.
That is, the ion implantation apparatus of Patent Document 2 is configured to drive a holding table that holds the substrate in the processing chamber based on the measurement result of the plane orientation measuring mechanism, thereby controlling the irradiation direction of the ion beam to the substrate. Therefore, the ion implantation apparatus disclosed in Patent Document 2 can perform ion implantation processing while controlling the influence of channeling for each substrate.

JP 2018-201036 JP 2005-149944

Patent Document 1 does not disclose an apparatus for measuring the direction of the crystal axis of the substrate.
Further, in Patent Document 2, in order to measure the surface orientation of a substrate, an X-ray irradiation mechanism for irradiating X-rays toward a wafer held by a platen and a scanner for detecting reflected X-rays reflected by the wafer are provided. It has a ration counter. However, both the X-ray irradiation mechanism and the scintillation counter are located inside the processing chamber. In general, contaminants caused by ion beams are generated and accumulated in the processing chamber of an ion implanter. Therefore, in the ion implantation apparatus of Patent Document 2, dirt adheres and accumulates on the X-ray irradiation mechanism and the scintillation counter as the apparatus is used. Measurement may not be possible.

In addition, regular maintenance work is required to adjust the X-ray irradiation mechanism and the scintillation counter, and to remove stains adhering to the X-ray irradiation mechanism and scintillation counter. In general, a processing chamber for processing substrates is placed under a high vacuum, so in order to perform the maintenance work described above, it is necessary to introduce air into the processing chamber and set the chamber to atmospheric pressure before performing the work. There is Furthermore, after the operation, the inside of the processing chamber must be evacuated again to return to a high vacuum. Therefore, in the ion implanter of Patent Document 2, the maintenance work for the X-ray irradiation mechanism and the scintillation counter is large-scale.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems. It is an object of the present invention to provide an ion implanter capable of easily performing

The ion implantation apparatus of the present invention comprises an end station having a loading section for receiving a substrate from the outside, a processing chamber in which the surface of the substrate to be processed is irradiated with an ion beam while the inside is evacuated, and the processing chamber. An ion implanter comprising a load lock chamber arranged between the end stations and a holding device arranged in the processing chamber for holding the substrate,
a crystal axis measuring device for measuring the direction of the crystal axis of the substrate, comprising an irradiator for irradiating the substrate with X-rays and a detector for detecting the X-rays reflected by the substrate;
a control device for controlling the irradiation direction of the ion beam with respect to the substrate based on the measurement result of the crystal axis measurement device;
The illuminator and the detector are both located in the end station or the loadlock chamber.

According to this configuration, the irradiator for irradiating the substrate of the crystal axis measuring apparatus with X-rays and the detector for detecting the X-rays reflected by the substrate are both arranged in the end station or the load lock chamber. . Therefore, contamination caused by the ion beam does not adhere. As a result, unlike the case where the irradiator and the detector are arranged in the processing chamber, the measurement accuracy of the crystal axis measuring apparatus can be ensured, and the maintenance work of the crystal axis measuring apparatus such as adjustment can be easily performed.

Further, the ion implantation apparatus of the present invention further includes an aligner device for orienting the substrate in a predetermined direction, and the crystal axis measurement device measures the crystal axis of the substrate after the substrate is oriented in the predetermined direction by the aligner device. It may be configured to measure direction.

According to this configuration, since the direction of the crystal axis of the substrate can be measured after orienting the substrate in the predetermined direction by the aligner device, the crystal axis measurement performed for measuring the direction of the crystal axis of the substrate is possible. The setup of the device or the operation of the crystal axis measuring device can be facilitated.

Further, in the ion implantation apparatus of the present invention, the holding device includes an electrostatic chuck having a mounting surface on which the substrate is mounted, and the substrate is attracted to the mounting surface by the electrostatic chuck. may be irradiated with the ion beam.

According to this configuration, since the substrate is attracted to the mounting surface of the electrostatic chuck, even if the substrate is warped, the substrate can be lifted by being attracted to the mounting surface of the electrostatic chuck. It is held by the holding device in a state in which the warp is corrected. Therefore, even if the substrate is warped, the warp of the substrate is corrected and the substrate is held by the holding device. Ions can be implanted with uniform angles.

Further, in the ion implantation apparatus of the present invention, the holding device moves at least a part of the edge portion of the surface to be processed to the mounting surface side while the substrate is adsorbed to the mounting surface. It is good also as a structure provided with the press member which presses to.

According to this configuration, at least a partial area of the edge portion of the surface to be processed of the substrate can be pressed toward the mounting surface by the pressing member. Therefore, by pressing the edge portion of the surface to be processed of the substrate toward the mounting surface by the pressing member, the warp of the substrate can be corrected, and the substrate can be held by the holding device with the warp of the substrate corrected. be able to. That is, even if the substrate is warped, the warp of the substrate can be corrected. Therefore, ion implantation is performed by making the angle between the irradiation direction of the ion beam and the crystal axis uniform over the entire surface of the substrate to be processed. can be applied.

Further, in the ion implantation apparatus of the present invention, after the substrate is received in the loading section, it is transported into the processing chamber and held by the holding device, and until the substrate is irradiated with the ion beam. Additionally, a heating mechanism for heating the substrate may be provided.

In general, when a substrate is heated, the substrate may warp more than before heating. The ion beam can be applied to the substrate in a state in which the warpage of the substrate is corrected. Therefore, even if the substrate is heated, the warpage of the substrate can be corrected, and ion implantation can be performed by making the angle formed by the irradiation direction of the ion beam and the crystal axis uniform over the entire surface of the substrate to be processed.
That is, even when the substrate is heated and the depth of ion implantation is to be controlled according to the temperature of the substrate, the effect of warpage of the substrate can be eliminated, and ions can be implanted to a uniform depth over the entire processed surface of the substrate. can be done.

According to the ion implanter of the present invention, it is possible to easily perform maintenance work for the crystal axis measuring apparatus while ensuring the measurement accuracy of the crystal axis measuring apparatus that measures the direction of the crystal axis of the substrate using X-rays. can.

1 is a plan view showing an ion implanter in one embodiment of the present invention; FIG. The front view which shows the aligner apparatus and crystal-axis measuring apparatus of the same embodiment. The perspective view which shows the electrostatic chuck and drive part of the holding|maintenance apparatus of the same embodiment. The side view which shows the holding|maintenance apparatus of the same embodiment. The top view which shows the holding|maintenance apparatus of the same embodiment. FIG. 2 is a schematic front view showing the inside of the first load lock chamber of the same embodiment; FIG. 4 is a schematic front view showing the inside of the first load-lock chamber in a modified example of the first load-lock chamber in the same embodiment;

An ion implanter 10 that is an embodiment of the present invention will be described.
An ion implantation apparatus 10 shown in FIG. 1 is used in a semiconductor manufacturing process, and implants ions into a substrate S by irradiating a surface Sa of the substrate S to be processed with an ion beam IB. More specifically, the substrate S is reciprocally transported a plurality of times in one direction so as to traverse the ion beam IB with the surface Sa to be processed facing the ion beam IB, while the entire surface to be processed Sa is ion-implanted. is applied.
In this embodiment, as shown in FIG. 1, the direction in which the substrate S is transferred is defined as the X direction, the direction orthogonal to the X direction on the horizontal plane is defined as the Y direction, and the vertical direction is defined as the Z direction. .

The substrate S to which the ion implantation process in this embodiment is performed is a single crystal silicon wafer, a silicon carbide wafer, or the like, and has a crystal axis C in one direction. Further, the substrate S has a disk shape and a thin plate shape as a whole, and an orientation flat or a notch is formed so as to cut out a part of the outer periphery. The orientation flat or notch is formed based on the direction of the crystal axis C of the substrate S when the substrate S is manufactured. As shown in FIG. It corresponds to part Sb. That is, the substrate S has a positioning portion Sb formed in advance based on the direction of the crystal axis C of the substrate S when the substrate S is manufactured.

<Configuration of Ion Implanter 10>
FIG. 1 is a schematic diagram showing the configuration of an ion implanter 10 viewed from the Z-direction side.
As shown in FIG. 1, an ion implanter 10 includes an ion source device 11 that generates ions from a raw material and takes out an ion beam IB, a beam line device 12 that transports the taken out ion beam IB, and an ion beam IB inside. A processing chamber 13 is provided in which the ion beam IB is applied to the substrate S in a vacuum state. The ion implanter 10 also includes an end station 14 adjacent to the processing chamber 13 for transferring the substrate S between the outside of the ion implanter 10 and the processing chamber 13 .

First, the end station 14 of the ion implanter 10 in this embodiment will be described.
As shown in FIG. 1, the end station 14 includes a loading section 15 for receiving a substrate S before ion implantation that has been loaded from the outside of the ion implantation apparatus 10, and a loading section 16 for loading the substrate S after ion implantation to the outside. Prepare. The end station 14 also includes an aligner device 20 that uses a positioning portion Sb formed on the substrate S to orient the substrate S in a predetermined direction. The aligner device 20 in this embodiment is a commonly known wafer aligner device.

Also, the end station 14 is provided with a crystal axis measuring device 30 for measuring the direction of the crystal axis C of the substrate S of single crystal. The crystal axis measuring device 30 includes an irradiator 31 that irradiates X-rays near the center of the surface Sa to be processed of the substrate S received by the crystal axis measuring device 30, and an X-ray beam reflected by the surface Sa to be processed of the substrate S. A detector 32 for detecting lines and a calculator 33 for calculating the direction of the crystal axis C of the substrate S from the information detected by the detector 32 are provided. The direction of the crystal axis C calculated by the calculator 33, that is, the measurement result D1 of the crystal axis measuring device 30 is sent to the control device 40, which will be described later.

The crystal axis measuring device 30 calculates the direction of the crystal axis C of the substrate S based on the same principle as a device generally known as an X-ray diffraction device (XRD). That is, the irradiator 31, the detector 32, and the calculator 33 of the crystal axis measuring device 30 can employ parts or configurations that are widely used in X-ray diffraction devices (XRD).

FIG. 2 is a schematic front view showing the aligner device 20 and the crystal axis measuring device 30 when the inside of the end station 14 is viewed from the Y direction. Further, FIG. 2 shows that after the positioning portion Sb of the substrate S is detected by the aligner device 20 and the substrate S is oriented in a predetermined direction with reference to the positioning portion Sb, the substrate supporting portion provided in the aligner device 20 is shown. 21 is supported.

As shown in FIG. 2, both the irradiator 31 and the detector 32 of the crystal axis measuring device 30 are connected to the aligner device 20 by connecting members 34 . Both the irradiator 31 and the detector 32 are arranged above the surface Sa of the substrate S to be processed while the substrate S is supported by the substrate support portion 21 . Further, the irradiator 31 can irradiate X-rays toward the center of the processing surface Sa of the substrate S supported by the substrate supporting part 21, and the detector 32 can detect the X-rays reflected by the processing surface Sa. Positioned.

As shown in FIG. 1, between the processing chamber 13 and the end station 14 are two load lock chambers 17,17. The load-lock chambers 17, 17 can be switched between high vacuum and atmospheric pressure. done. In the ion implantation apparatus 10 of the present embodiment, the load-lock chamber 17 into which one of the two load-lock chambers 17, 17 before ion implantation is carried into the processing chamber 13 is designated as the first load-lock chamber 17a. On the other hand, the load-lock chamber 17 for unloading the substrate S after ion implantation to the outside of the processing chamber 13 is referred to as a second load-lock chamber 17b.

Further, the first load-lock chamber 17a has a heating mechanism 50 for heating the substrate S, and the second load-lock chamber 17b has a cooling device 60 for cooling the substrate S. As shown in FIG.

FIG. 6 is a schematic front view of the inside of the first load lock chamber 17a and the heating mechanism 50 as seen from the Y direction. As shown in FIG. 6, the first load-lock chamber 17a has a stage 18a on which the substrate S loaded from the end station 14 is placed. It is arranged above the surface Sa to be processed of the substrate S in the state shown in FIG.

The heating mechanism 50 is composed of a widely known lamp heater such as a halogen lamp, and has a heat source 51 inside. The heat source 51 is arranged to be exposed inside the first load lock chamber 15a, and the heating mechanism 50 irradiates the substrate S with light from the heat source 51 while the substrate S is placed on the stage 18a. The entire surface to be processed Sa of the substrate S can be heated uniformly in an instant.

Further, as shown in FIG. 1, the second load-lock chamber 17b is provided with a cooling device 60 for cooling the substrate S. The cooling device 60 may also have a generally well-known configuration. Any configuration can be employed, such as a configuration in which a cooling gas is blown onto the S, or a configuration in which the substrate S is placed on a stage in which a coolant is flowed.

Next, the processing chamber 13 of the ion implanter 10 in this embodiment and the internal configuration of the processing chamber 13 will be described.
As shown in FIG. 1, the inside of the processing chamber 13 is always in a vacuum state while the ion implanter 10 is in operation, and an ion beam IB is introduced into the processing chamber 13 from the beam line device 12 .

Further, inside the processing chamber 13, a holding device 70 for holding the substrate S is arranged. , ion implantation is performed on the substrate S, and the substrate S is held until the substrate S is transferred to the second load lock chamber 17b. In addition, the transfer of the substrate S between the holding device 70 and the first load-lock chamber 17 a and the second load-lock chamber 17 b is performed by a robot arm (not shown) arranged in the processing chamber 13 .

In the processing chamber 13, a transport path 19 for transporting a holding device 70 holding the substrate S in one direction is formed along the X direction. While holding the substrate S facing the beam IB, the substrate S is reciprocally transported along the transport path 19 by a transport device (not shown) so that the substrate S traverses the ion beam IB a plurality of times. In this way, the substrate S is ion-implanted by irradiating the entire surface to be processed Sb of the substrate S with the ion beam IB while the substrate S traverses the ion beam IB multiple times.

The holding device 70 also includes an electrostatic chuck 71 having a mounting surface 72 for mounting the substrate S indicated by a broken line in FIG. The substrate S is held by the holding device 70 while being attracted to the mounting surface 72 of the electrostatic chuck 71 . In addition, the holding device 70 can direct the mounting surface 72 in an arbitrary direction with respect to the ion beam IB, that is, the processing surface Sa of the held substrate S can be oriented in an arbitrary direction with respect to the ion beam IB. The driving portion 73 is configured to be controlled by the control device 40 .

FIG. 3 is a schematic perspective view showing the electrostatic chuck 71 and the drive section 73 of the holding device 70. As shown in FIG. As shown in FIG. 3 , the electrostatic chuck 71 has a circular mounting surface 72 on which the substrate S is mounted, and a drive unit 73 is arranged on the opposite side of the mounting surface 72 of the electrostatic chuck 71 . It is

As shown in FIG. 3, the drive unit 73 is rotatable about an axis A1 passing through the center of the mounting surface 72 and orthogonal to the mounting surface 72, and an axis A2 coinciding with the X direction. is configured to be rotatable within the range of . Further, the substrate S is mounted on the mounting surface 72 so that the center of the substrate S and the center of the mounting surface S are aligned, and the substrate S attracted to the mounting surface 72 by the electrostatic chuck 71 is placed on the mounting surface 72 . Together with the surface 72, it is configured to be rotatable about the axis A1. That is, the drive unit 73 rotates about the axes A1 and A2, respectively, so that the mounting surface 72 of the electrostatic chuck 71 can be oriented in any direction with respect to the ion beam IB. be. Further, the operation of the driving section 73 is controlled by the control device 40 based on the measurement result D1 of the crystal axis measuring device 30. FIG. The driving section 73 is composed of a plurality of motors, etc. The arrangement of the driving section 73 shown in FIGS. 1 and 3 is an example, and the plurality of motors are arranged at different positions. It can be.

In this embodiment, the drive unit 31 is configured to rotate about two axes, the axes A1 and A2. can be set arbitrarily according to That is, as long as the mounting surface 71 of the electrostatic chuck 72 can be oriented in any direction with respect to the ion beam IB, the drive unit 31 may have any configuration.

4 and 5 are a side view and a top view, respectively, showing the holding device 70 holding the substrate S. FIG. As shown in FIGS. 4 and 5, the holding device 70 includes two pressing members 74 that press the end edge portion of the surface Sb to be processed of the substrate S, that is, at least a partial region of the peripheral edge portion toward the mounting surface 72 side. , 74 . Further, as shown in FIG. 5, the two pressing members 74, 74 are comb-shaped and arranged to face each other with respect to the substrate S placed on the placement surface 72. As shown in FIG.

FIG. 8 shows a modification of the load lock chamber 17a in the ion implanter 10 of this embodiment. As shown in FIG. 8, in a modified example, the irradiator 31 and the detector 32 are arranged in the load lock chamber 17a. Although the load lock chamber 17a does not necessarily include the heating device 51, in a modification, as shown in FIG. A heat shield plate 35 is provided.

<Operation of Ion Implanter 10>
Next, operation of the ion implanter 10 will be described with reference to FIG.
In the ion implantation apparatus 10 according to the present embodiment, first, the substrate S before ion implantation is loaded into the loading section 15 from the outside of the ion implantation apparatus 10 . After the substrate S is received by the loading section 15 , it is transferred to the aligner device 20 arranged inside the end station 14 . In the aligner device 20, the substrate S is oriented in a predetermined direction with reference to the pre-formed positioning portion Sb.

After that, as shown in FIG. 1, the direction of the crystal axis C of the substrate S is measured by the crystal axis measuring device 30 while the substrate S is supported by the substrate supporting portion 21 provided in the aligner device 20 . That is, X-rays are emitted from the irradiator 31 toward the center of the surface to be processed Sa of the substrate S supported by the substrate supporting portion 21, and the X-rays reflected by the surface to be processed Sa are detected by the detector 32. The computing unit 33 calculates the direction of the crystal axis C of the substrate S based on the result detected by the unit 32 . Here, the measurement result D1 of the crystal axis measuring device 30, that is, the information on the calculated direction of the crystal axis C of the substrate S is sent to the control device 40, and the control device 40 adjusts the holding device 20 based on the received measurement result D1. It controls driving of the drive unit 73 .

After obtaining the measurement result D1, the substrate S is transferred to the buffer 80 arranged inside the end station 14 shown in FIG. 17a and, as shown in FIG. 6, placed on the stage 18a in the first load lock chamber 17a. After that, the first load-lock chamber 17a is isolated from the end station 14 by closing a gate (not shown), and the first load-lock chamber 17a is evacuated to a vacuum state.

After the inside of the first load-lock chamber 17a is evacuated, light is emitted from the heat source 51 of the heating mechanism 50 toward the substrate S, and the substrate S is heated to a predetermined temperature. At this time, the predetermined temperature for raising the temperature of the substrate S is set in advance according to the desired depth of ion implantation in the subsequent ion implantation, and is controlled by the time during which the heat source 51 irradiates the substrate S with light. I can do it. In other words, by controlling the time for irradiating the substrate S with light from the heat source 51 of the heating mechanism 50, the temperature of the substrate S after the temperature rise can be controlled. It is possible to control the depth from the surface to be processed Sa that the ions implanted into the substrate S can reach. Further, a heating unit (not shown) for heating the substrate S may be further provided in the electrostatic chuck 71 so that the temperature of the substrate S immediately before being irradiated with the ion beam IB can be controlled more accurately.

The substrate S heated to a predetermined temperature by the heating mechanism 50 inside the first load lock chamber 17 a is transferred into the processing chamber 13 and held by the holding device 70 . More specifically, as indicated by the dashed line in FIG. 1, the substrate S is mounted on the mounting surface 72 of the electrostatic chuck 71 in a state in which the mounting surface 72 is parallel to the XY plane.

After that, the substrate S is attracted to the mounting surface 72 by the electrostatic chuck, and then, as shown in FIG. and held by the holding device 70 . At this time, if the substrate S is warped, the warp of the substrate S is corrected by the electrostatic chuck 71 and the pressing member 74 .

As shown by the dashed line in FIG. 4, when the substrate S is curved, that is, when the substrate S is warped, the electrostatic chuck 71 is first operated after placing the substrate S on the placement surface 72. As a result, the substrate S is attracted to the mounting surface 72 in a state in which the warp is corrected. After that, the holding member 74 is operated, and a partial region of the peripheral edge portion of the surface Sa to be processed of the substrate S is pressed toward the mounting surface 72 by the holding member 74, thereby correcting the warpage of the substrate S more reliably. Thus, the substrate S can be held by the holding device 70 in a state in which the warp of the substrate S is corrected.

In the present embodiment, the ion implanter 10 includes a heating mechanism 50 , and the substrate S is heated by the heating mechanism 50 from the temperature when it was received in the loading section 15 and transferred into the processing chamber 13 . The higher the temperature of the substrate S, the more likely it is to warp. However, since the holding device 70 includes the pressing member 74, the substrate S is curved from the center to the periphery of the surface to be processed Sa, as indicated by the broken line in FIG. Even if a large warp occurs, the pressing member 74 can press a part of the periphery of the surface Sa to be processed toward the mounting surface 72, and the warp of the substrate S can be reliably corrected. S can be held by the holding device 70 .

Therefore, even if the ion implanter 10 includes the heating mechanism 50 as in the present embodiment and the substrate S is warped due to the heating of the substrate S, the electrostatic chuck 71 can be warped more than at room temperature. In addition, by further providing the pressing member 74, it is possible to irradiate the substrate S with the ion beam IB while the warpage of the substrate S is more reliably corrected.

Subsequently, after the substrate S is mounted on the mounting surface 72 and held by the holding device 70, the control device 40 operates the driving section 73 so that the irradiated surface Sa of the substrate S faces the ion beam IB. Let At this time, as shown in FIG. 3, the control device 40 controls the operation of the drive unit 73 based on the measurement result D1, so that the irradiation angle formed by the irradiation direction of the ion beam IB and the direction of the crystal axis C of the substrate S is θ can be adjusted to any desired angle.

In the ion implantation apparatus 10 of the present embodiment, channeling implantation is performed by implanting ions deeper into the substrate S by implanting the ion beam IB along the direction of the crystal axis C using channeling. considered to be a device. Therefore, the control device 40 controls the operation of the driving section 73 so that the irradiation angle θ is within a predetermined range in which channeling implantation can be performed, and directs the substrate S toward the ion beam IB.

After the substrate S is directed toward the ion beam IB at an irradiation angle θ at which channeling implantation can be performed by the driving unit 73 whose driving is controlled by the control unit 40, the holding unit 70 is moved across the ion beam IB by a conveying unit (not shown). Then, the wafer is reciprocally transported on the transport path 19 a predetermined number of times, and ion implantation is performed on the entire surface Sa to be processed.

After ion implantation is applied to the substrate S, the adsorption of the substrate S by the electrostatic chuck 71 and the pressing of the substrate S by the holding member 74 are released, and the substrate S is transferred from the processing chamber 13 via the second load lock chamber 17b. It is transferred to the unloading section 16 of the end station 14 . The ion-implanted substrate S transferred to the unloading section 16 is unloaded outside the ion implanter 10 .

The transfer of the substrate S within the end station 14 is performed by a transfer robot (not shown). Also, the transfer of the substrate S between the processing chamber 13 and the first load-lock chamber 17a and the second load-lock chamber 17b is performed by a robot arm (not shown). For both the transfer robot (not shown) and the robot arm (not shown), those commonly known in semiconductor manufacturing apparatuses may be used.

In the ion implanter 10 of the present embodiment, the control device 40 can control the drive of the drive unit 73 based on the measurement result D1 obtained by measuring the direction of the crystal axis C for each substrate S by the crystal axis measurement device 30. As a result, the irradiation direction of the ion beam IB with respect to the substrate S can be controlled. That is, the control device 40 controls the operation of the driving section 73 of the holding device 70 so that the direction of the crystal axis C and the irradiation angle θ of the ion beam IB fall within a predetermined range, thereby performing channeling implantation. It can be carried out.

Further, in the ion implantation apparatus 10, the substrate S is held by the holding device 70 by being attracted to the mounting surface 72 of the electrostatic chuck 71, so that the substrate S is held by the holding device 70 in a state in which the warp is corrected. be done. Therefore, as shown in FIG. 3, ion implantation is performed in a state where the irradiation angle θ formed by the irradiation direction of the ion beam and the crystal axis C of the substrate S is made uniform over the entire processing surface Sa of the substrate S. be able to. Although the substrate S is not illustrated in FIG. 3, the crystal axis C of the substrate S when the substrate S is placed on the mounting surface 72 is illustrated.

That is, according to the ion implantation apparatus 10 of the present invention, the irradiation direction of the ion beam IB can be controlled according to the direction of the crystal axis C of each substrate S, and even if the substrate S is warped, the substrate Ion implantation can be performed in a state in which the irradiation angle θ, which is the angle between the irradiation direction of the ion beam IB and the crystal axis C, is made uniform within a predetermined range over the entire surface Sa to be processed. The range of the irradiation angle θ that can be performed is a value determined by the material of the substrate S and the like.

Further, measuring the direction of the crystal axis C for each substrate S in the present invention is not limited to measuring the direction of the crystal axis C for each substrate S into which ions are implanted. For example, it is conceivable to measure the direction of the crystal axis C of the substrate S for each predetermined number of substrates S, or to measure the direction of the crystal axis C of each substrate S for each production lot when manufacturing the substrate S. The user of the ion implanter 10 may arbitrarily decide to measure the direction of the crystal axis C with respect to .

In addition, since the ion implanter 10 includes the pressing member 74, the warp of the substrate S can be corrected more reliably, and even if the substrate S is greatly warped, the surface Sa of the substrate S to be processed can be corrected. Ions can be implanted by making the irradiation angle θ between the irradiation direction of the ion beam and the crystal axis C uniform over the entire area. Therefore, even when the temperature of the substrate S is raised by the heating device 70 and the substrate S is greatly warped, the warp of the substrate S can be reliably corrected. That is, even if it is desired to adjust the depth of ion implantation by heating the substrate S to a predetermined temperature, the influence of the warpage of the substrate S is eliminated and the irradiation angle θ is made uniform for ion implantation. can be applied.

The irradiator 31 and the detector 32 of the crystal orientation measurement mechanism 30 of this embodiment are both connected to the orientation adjustment mechanism 20. The irradiator 31 and the detector 32 are connected to the end station. 14 or the first load lock chamber 17a.

When the irradiation device 31 and the detector 32 are arranged in the processing chamber 13, the irradiation device 31 and the detection device 32 are contaminated by the ion beam IB. It is conceivable that periodic cleaning work of the irradiator 31 and the detector 32 will be required. Further, when performing such work, it is necessary to change the inside of the processing chamber 13 from a vacuum to atmospheric pressure, and after the work, it is necessary to evacuate the processing chamber 13 again to return the inside of the processing chamber 13 to a vacuum state.

On the other hand, in this embodiment and the modified example, both the irradiator 31 and the detector 32 are arranged inside the end station 14 or the first load lock chamber 17a. Therefore, since the irradiator 31 and the detector 32 are arranged outside the processing chamber 13, the cleaning operation of the irradiator 31 and the detector 32 becomes unnecessary, and compared with the case where they are arranged inside the processing chamber 13, Maintenance work for adjusting the irradiator 31 and the detector 32 is facilitated.

In the ion implanter 10 according to the present embodiment, the irradiator 31 and the detector 32 of the crystal axis measuring device 30 are connected to the aligner device 20, and the aligner device 20 aligns each substrate S with the positioning portion Sb as a reference. After orientation in a predetermined direction, the orientation of the crystallographic axis C of the substrate S can be measured. Therefore, the direction of the crystal axis C of the substrate S can be measured while the direction of the crystal axis C of the substrate S is roughly grasped by the positioning portion Sb. That is, the setting of the crystal axis measuring device 30 or the operation of the crystal axis measuring device 30 can be facilitated.

Further, generally, when the substrate S is manufactured, a manufacturing error occurs within the range of tolerance at the position where the positioning portion Sb is formed. Therefore, even if there is a manufacturing error in the position of the positioning portion Sb with respect to the crystal axis C of the substrate S, the direction of the crystal axis C is measured for each substrate by the crystal axis measuring device 30, so that the crystal axis can be reliably measured. The direction of C can be specified and ion implantation can be performed. Furthermore, if the direction of the crystal axis C measured by the crystal axis measuring device 30 is out of the range of tolerances set when the substrate S was manufactured, it can be determined that it is inappropriate for processing.

In the present embodiment, the heating device 50 is arranged in the first load lock chamber 17a. can be placed at any position as long as the temperature can be raised. That is, the position where the heating mechanism 50 is arranged is not limited to the load lock chamber 17 .

In the present embodiment, the control device 40 of the ion implanter 10 controls driving of the drive unit 73 of the holding device 70. The control device 40 controls the beamline device 12 to generate an ion beam. By controlling the direction of IB, the irradiation angle θ formed by the direction of the crystal axis C of the substrate S and the irradiation direction of the ion beam IB may be controlled.

In addition, it goes without saying that the present invention is not limited to the above-described embodiments, and that various modifications are possible without departing from the spirit of the present invention.

S Substrate Sa Surface to be processed Sb Positioning portion IB Ion beam 10 Ion implanter 11 Ion source device 12 Beamline device 13 Processing chamber 14 End station 15 Loading unit 16 Unloading unit 17 Load-lock chamber 17a First load-lock chamber 17b Second load Lock chamber 18a Stage 19 Transport path 20 Aligner device 21 Substrate support 30 Crystal axis measuring device 31 Irradiator 32 Detector 33 Calculator 34 Connecting member 40 Control device 50 Heating mechanism 51 Heat source 60 Cooling device 70 Holding device 71 Electrostatic chuck 72 Mounting surface 73 Driving unit 74 Pressing member 80 Buffer

Claims (5)

an end station having a loading section for receiving a substrate from the outside; a processing chamber in which the surface of the substrate to be processed is irradiated with an ion beam while the interior is evacuated; and a processing chamber disposed between the processing chamber and the end station. and a holding device arranged in the processing chamber and holding the substrate, the ion implanter comprising:
a crystal axis measuring device for measuring the direction of the crystal axis of the substrate, comprising an irradiator for irradiating the substrate with X-rays and a detector for detecting the X-rays reflected by the substrate;
a control device for controlling the irradiation direction of the ion beam with respect to the substrate based on the measurement result of the crystal axis measurement device;
An ion implanter, wherein both the irradiator and the detector are arranged in the end station or the load lock chamber. further comprising an aligner device for orienting the substrate in a predetermined direction, wherein the crystal axis measurement device is configured to measure the direction of the crystal axis of the substrate after being oriented in the predetermined direction by the aligner device. 2. The ion implanter of claim 1, wherein the ion implanter is characterized by: The holding device includes an electrostatic chuck having a mounting surface on which the substrate is mounted, and the substrate is irradiated with the ion beam while being attracted to the mounting surface by the electrostatic chuck. 3. The ion implanter according to claim 1 or 2, wherein The holding device includes a pressing member that presses at least a part of an edge portion of the surface to be processed toward the mounting surface while the substrate is adsorbed on the mounting surface. The ion implanter according to any one of claims 1 to 3. A heating device is provided for heating the substrate after the substrate is received in the loading unit, is transported into the processing chamber, is held by the holding device, and is irradiated with the ion beam. 5. The ion implanter according to claim 3 or 4, characterized in that:

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