JP7112007B2 - light emitting device - Google Patents

Description

The present disclosure relates to light emitting devices.

2. Description of the Related Art Conventionally, a light-emitting device is known in which a light-emitting element is mounted on the bottom surface of a package having a recess. For example, in Patent Document 1, a light emitting element is placed on the bottom surface of the cup of a package having a cup, the bottom surface and side surfaces of the cup are covered with a layer of a first resin containing a reflective material, and the layer of the reflective material is covered with the cup. A light-emitting device arranged on the bottom side and the side side of the , and a method of manufacturing the same are disclosed.

JP 2016-72412 A

In the technique of the above patent document, after injecting a first resin containing a reflective material into the cup, a centrifugal force is applied to the first resin, thereby arranging layers of the reflective material on the bottom and side surfaces of the cup. At this time, the arrangement of the layers of the reflective material is, for example, by applying centrifugal force on the axis of rotation so that the bottom surface of the cup is on the outside, and at the same time applying centrifugal force on the axis of rotation so that the side surface of the cup is on the outside. conduct.
However, the above technique requires highly accurate adjustment of the sedimentation of the reflective material, and it is assumed that the reflective material layer may not be arranged continuously from the bottom surface to the upper end of the side surface of the cup. Therefore, although the luminous efficiency of the light-emitting device of the above patent document is high, there is room for further improvement.

An object of the embodiments of the present disclosure is to provide a light-emitting device with high luminous efficiency.

A method for manufacturing a light-emitting device according to an embodiment of the present disclosure includes the steps of placing a light-emitting element on the bottom surface of a recess of a package having a recess, and coating the side surface of the recess with a first resin containing a first reflective material. and forming a second reflective layer by contacting the first reflective layer and coating the bottom surface of the recess with a second resin containing a second reflective material. and disposing a light-transmitting layer made of a third resin containing a phosphor on the second reflective layer and the light-emitting element, wherein the step of forming the second reflective layer is performed by centrifugal force. A containing layer containing the second reflecting material and a light-transmitting layer are formed in this order on the bottom surface of the recess by allowing the second reflecting material contained in the second resin to settle, and at least a side surface of the light emitting element A part of the second reflective layer is formed so that the containing layer does not face the second reflective layer.

A method for manufacturing a light-emitting device according to an embodiment of the present disclosure includes the steps of placing a light-emitting element on the bottom surface of a recess of a package having a recess, and coating the side surface of the recess with a first resin containing a first reflective material. and forming a second reflective layer by contacting the first reflective layer and coating the bottom surface of the recess with a second resin containing a second reflective material. and disposing a light-transmitting layer made of a third resin containing a phosphor on the second reflective layer and the light-emitting element, wherein the step of forming the second reflective layer includes: is placed on the bottom surface of the recess between the side surface of the recess and the light emitting element by potting, and centrifugal force is applied to the package with a rotating shaft so that the bottom surface of the recess is on the outside, whereby the first reflection The shape of the second resin is changed so as to cover all the bottom surfaces of the recesses exposed from the layer, and the second resin is cured under centrifugal force.

A light-emitting device according to an embodiment of the present disclosure includes a package having a recess, a light-emitting element placed on the bottom surface of the recess, and a first resin containing a first reflective material covering the side surface of the recess. a second reflective layer formed by coating the bottom surface of the recess with a second resin containing a second reflective material in contact with the first reflective layer; and the second reflective layer and a light-transmitting layer made of a third resin containing a phosphor and disposed on the light-emitting element, wherein the first reflective layer has the first reflective material dispersed in the first resin. The second reflective layer includes a containing layer containing the second reflecting material and a transparent layer provided in this order on the bottom surface of the recess, and at least part of the side surface of the light emitting element is the containing layer. do not face

A method for manufacturing a light emitting device according to an embodiment of the present disclosure can manufacture a light emitting device with high luminous efficiency.
The light emitting device of the embodiment according to the present disclosure has high luminous efficiency.

1 is a perspective view schematically showing the configuration of a light emitting device according to an embodiment; FIG. FIG. 1B is a cross-sectional view taken along line IB-IB of FIG. 1A; 1 is a cross-sectional view schematically showing part of the configuration of a light emitting device according to an embodiment; FIG. 4 is a flow chart of a method for manufacturing a light emitting device according to an embodiment; FIG. 4 is a cross-sectional view showing a step of mounting a light emitting element in the method of manufacturing the light emitting device according to the embodiment; FIG. 4 is a cross-sectional view showing a step of forming a first reflective layer in the method of manufacturing the light emitting device according to the embodiment; FIG. 4A is a plan view showing a step of forming a first reflective layer in the method of manufacturing the light emitting device according to the embodiment; FIG. 4 is a schematic diagram showing a step of forming a second reflective layer in the method of manufacturing a light emitting device according to the embodiment, the step of coating the bottom surface of the recess of the package with the second resin and causing the second reflective material to settle by centrifugal force; It is a schematic diagram showing. FIG. 4B is a cross-sectional view showing a step of forming a second reflective layer in the method for manufacturing a light-emitting device according to the embodiment, and a cross-sectional view showing a state after the second reflective material is sedimented by centrifugal force. FIG. 4 is a cross-sectional view showing a step of disposing a light-transmitting layer in the method of manufacturing the light-emitting device according to the embodiment; FIG. 10 is a cross-sectional view schematically showing the configuration of a light emitting device according to another embodiment; FIG. 10 is a cross-sectional view schematically showing the configuration of a light emitting device according to another embodiment; FIG. 10 is a cross-sectional view schematically showing the configuration of a light emitting device according to another embodiment; FIG. 10 is a perspective view schematically showing the configuration of a light emitting device according to another embodiment; FIG. 7B is a cross-sectional view along line VIIB-VIIB of FIG. 7A; FIG. 10 is a plan view schematically showing the configuration of a light emitting device according to another embodiment; FIG. 8B is a cross-sectional view taken along line VIIIB-VIIIB of FIG. 8A; FIG. 8B is a cross-sectional view taken along line VIIIC-VIIIC of FIG. 8A; FIG. 10 is a plan view schematically showing the configuration of a light emitting device according to another embodiment; FIG. 9B is a cross-sectional view taken along line IXB-IXB of FIG. 9A;

Embodiments are described below with reference to the drawings. However, the embodiments shown below are intended to exemplify the method of manufacturing a light-emitting device and the light-emitting device for embodying the technical idea of the present embodiment, and are not limited to the following. In addition, unless there is a specific description, the dimensions, materials, shapes, relative arrangements, etc. of the components described in the embodiments are not intended to limit the scope of the present invention, but are merely examples. It's nothing more than Note that the sizes and positional relationships of members shown in each drawing may be exaggerated for clarity of explanation.

<<Embodiment>>
FIG. 1A is a perspective view schematically showing the configuration of a light emitting device according to an embodiment. FIG. 1B is a cross-sectional view taken along line IB--IB of FIG. 1A. FIG. 1C is a cross-sectional view schematically showing part of the configuration of the light-emitting device according to the embodiment.

[Light emitting device]
The light emitting device 100 includes a package 10 having a recess 15, a light emitting element 20 mounted on the bottom surface of the recess 15, a first reflective layer 30 formed covering the side surface of the recess 15, and a first reflective layer 30. a second reflective layer 40 formed by covering the bottom surface of the recessed portion 15 in contact with the second reflective layer 40; ing.

The package 10 includes an insulating substrate 2, a first wiring portion 3 provided on the upper surface of the substrate portion 2a of the insulating substrate 2, a second wiring portion 5 provided on the lower surface of the substrate portion 2a, and a side surface of the substrate portion 2a. and a via 4 electrically connecting the first wiring portion 3 and the second wiring portion 5 . The package 10 is substantially rectangular in plan view and has a recess 15 . The opening of the concave portion 15 is formed in a substantially rectangular shape in plan view.

The insulating substrate 2 includes a substrate portion 2a on which the light emitting element 20 is mounted, a first wall surface portion 2b formed on the peripheral edge of the upper surface side of the substrate portion 2a, and a second wall surface portion 2b laminated on the first wall surface portion 2b. and a wall surface portion 2c. The insulating substrate 2 is formed in a concave shape having an opening in the center inside the first wall surface portion 2b and the second wall surface portion 2c.
The substrate portion 2a, the first wall surface portion 2b, and the second wall surface portion 2c are provided so that a step is formed inside. The first wall surface portion 2b and the second wall surface portion 2c are formed so that the outer peripheral side surface is the same side surface, and the inner peripheral side surface is formed such that the first wall surface portion 2b is located inside the second wall surface portion 2c. Positioning the first wall surface portion 2b more inward than the second wall surface portion 2c makes it easier for the first reflective layer 30, which will be described later, to incline. The side surface of the concave portion 15 may be an inclined surface that increases in width from the bottom toward the opening instead of the step.

As the insulating substrate 2, for example, PPA (polyphthalamide), PPS (polyphenylene sulfide), thermoplastic resin such as liquid crystal polymer, epoxy resin, silicone resin, modified epoxy resin, urethane resin, or phenol resin. A thermosetting resin such as can be used. Further, it is more preferable to use glass epoxy resin, ceramics, glass, or the like for the insulating substrate 2 . When using ceramics for the insulating substrate 2, it is particularly preferable to use alumina, aluminum nitride, mullite, silicon carbide, silicon nitride, or the like.

The first wiring portion 3 is provided on the upper surface of the substrate portion 2 a and electrically connected to the light emitting element 20 . The first wiring section 3 has a first lead 3a and a second lead 3b as a pair of positive and negative electrodes, and a light emitting element 20 is flip-chip mounted on the first lead 3a and the second lead 3b.
The second wiring portion 5 is provided on the lower surface of the substrate portion 2a and is electrically connected to an external power source as an external electrode of the light emitting device 100 .
The via 4 is provided in a through hole that penetrates the substrate portion 2a, and the third wiring portion 6 is provided on the side surface of the substrate portion 2a, respectively, to electrically connect the first wiring portion 3 and the second wiring portion 5. there is If the first wiring portion 3 and the second wiring portion 5 are electrically connected, either the via 4 or the third wiring portion 6 can be omitted.

As the first wiring portion 3, the second wiring portion 5, and the third wiring portion 6, for example, Fe, Cu, Ni, Al, Ag, Au, or an alloy containing one of these can be used.
Moreover, the plating layer 7 may be formed on the surfaces of the first wiring portion 3 , the second wiring portion 5 and the third wiring portion 6 . The plating layer 7 may be made of, for example, Au, Ag, Cu, Pt, or an alloy containing one of these. If the plated layer 7 is made of these materials, the reflectance of light from the light emitting element 20 can be further increased.

The light emitting device 20 includes a translucent substrate 21 and a semiconductor layer 22 formed on the substrate 21 . As for the substrate 21, an insulating material can be used, and a conductive material can also be used. The shape, size, etc. of the light emitting element 20 can be selected arbitrarily. As the emission color of the light-emitting element 20, one having an arbitrary wavelength can be selected according to the application. For example, a GaN-based or InGaN-based light emitting element 20 can be used for the blue (light with a wavelength of 430 to 490 nm) light emitting element 20 . As an InGaN-based material, InxAlYGa1 _-XYN ( _0≤X≤1 , 0≤Y≤1, _X +Y≤1) or the like can be used.
The thickness of the light emitting element 20 (for example, the height from the lower surface of the semiconductor layer 22 to the upper surface of the substrate 21) is, for example, 100 μm or more and 300 μm or less.

The first reflective layer 30 and the second reflective layer 40 are members that reflect the light emitted from the light emitting element 20 .
The surface inside the recess 15 is preferably covered with a first reflective layer 30 and a second reflective layer 40 so that the light emitted from the light emitting element 20 is not transmitted through or absorbed by the bottom or side surfaces of the recess 15 . More preferably, all inner surfaces are coated with the first reflective layer 30 and the second reflective layer 40 . In addition, the surface of the light emitting element 20 is not covered with the first reflective layer 30 and the second reflective layer 40 so as not to interfere with the extraction of light emitted from the light emitting element 20 . 2 is preferably exposed from the reflective layer 40 .

The first reflective layer 30 is formed by covering the side surface of the concave portion 15 of the package 10 with a first resin containing a first reflective material 31 . The first reflective layer 30 is separated from the side surface of the light emitting element 20 and covers the outer edge of the bottom surface of the recess 15 . Also, the first reflective layer 30 covers continuously from the outer edge of the bottom surface of the recess 15 to the side surface of the recess 15 . It is more preferable that the first reflective layer 30 covers substantially the entire side surface of the recess 15, but at least the upper end of the first reflective material 31 is higher than the upper surface of the light emitting element 20 in a cross-sectional view of the light emitting device 100. It is preferable to cover the side surfaces of the recess 15 .

In the first reflective layer 30, the first reflective material 31 is dispersed in the first resin. Here, that the first reflecting material 31 is dispersed in the first resin means that the reflecting material should be dispersed to the extent that it functions as a reflecting layer. It is sufficient if it is in a dispersed state when the resin containing the reflective material is applied in . In addition, as long as the first reflective layer 30 has a function as a reflective layer, the first reflective material 31 may be partially biased.
The content concentration of the first reflecting material 31 in the first reflecting layer 30 is, for example, 10% by mass or more and 50% by mass or less.
By covering the side surface of the recess 15 with the first reflective layer 30 , the transmission and absorption of light by the side surface of the recess 15 can be prevented.

The second reflective layer 40 is in contact with the first reflective layer 30 and is formed by coating the bottom surface of the recess 15 of the package 10 with a second resin containing a second reflective material 41 . The second reflective layer 40 covers the upper surface of the substrate portion 2 a of the insulating substrate 2 and the first wiring portion 3 on the bottom surface of the recess 15 , and partially covers the first reflective layer 30 . The second reflective layer 40 covers the bottom surface of the concave portion 15 with a substantially uniform thickness.
By covering the bottom surface of the concave portion 15 with the second reflective layer 40, it is possible to prevent transmission and absorption of light by the plating layer 7 and the substrate portion 2a.

The second reflective layer 40 is provided so that at least part of the side surface of the light emitting element 20 is exposed from the second reflective layer 40 . Here, only a portion of the side surface of the light emitting element 20 located on the semiconductor layer 22 side (that is, the bottom surface side of the recess 15) is covered with the second reflective layer 40, and the other portion of the side surface is covered with the second reflective layer. 40 and covered with a light transmissive layer 50 .
Here, the side surface of the light emitting element 20 is a portion where the side surface of the substrate 21 and the side surface of the semiconductor layer 22 are combined.
In the cross-sectional view of the second reflective layer 40, the second reflective material 41 is arranged biased toward the bottom surface.
The second reflective layer 40 preferably includes a containing layer 40 a containing the second reflective material 41 and a light-transmitting layer 40 b in order from the bottom surface side of the recess 15 . The containing layer 40a is a layer formed by sedimentation of the second reflecting material 41, and is a region in which the second reflecting material 41 is arranged at a high concentration in the depth direction of the second reflecting layer 40. As shown in FIG. The translucent layer 40b is a layer mainly composed of resin, which is formed upward as the second reflector 41 settles. In other words, no clear interface is formed between the containing layer 40a and the translucent layer 40b.

The second reflective layer 40 is provided so that at least part of the side surface of the light emitting element 20 does not face the containing layer 40a, but is provided so that substantially all of the side surface of the light emitting element 20 does not face the containing layer 40a. is preferred. That is, it is preferable that substantially all of the side surface of the light emitting element 20 is not covered with the containing layer 40a. Here, only a partial area of the mounting surface side of the side surface of the light emitting element 20 is covered with the containing layer 40a, and the other area of the side surface is exposed from the containing layer 40a. 50 coated. Here, the second reflective layer 40 is arranged on the side surface of the light emitting element 20 so that the entire side surface of the semiconductor layer 22 is not covered with the containing layer 40a.
Since at least part of the side surface of the semiconductor layer 22 of the light emitting element 20 is provided so as not to face the containing layer 40a, the light extraction efficiency from the side surface of the light emitting element 20 is improved. Light distribution chromaticity in the area can be improved.

The second reflective layer 40 may be provided so that at least part of the side surface of the light emitting element 20 does not face the containing layer 40a. However, in order to further improve the above effect, it is preferable that the area of the side surface of the light emitting element 20 facing the containing layer 40a is small, and the side surface of the light emitting element 20 is not entirely opposed to the containing layer 40a. More preferred (see FIGS. 4 and 5).
Note that the fact that the second reflective layer 40 is provided so that at least part of the side surface of the light emitting element 20 does not face the containing layer 40a means that all the side surfaces of the light emitting element 20 have at least part of each side surface. This means that the second reflective layer 40 is provided so as not to face the containing layer 40a.

The thickness of the second reflective layer 40 is preferably, for example, 10 μm or more and 200 μm or less. If the thickness of the second reflective layer 40 is 10 μm or more, it becomes easier to form the second reflective layer 40 . Moreover, if the thickness of the second reflective layer 40 is 200 μm or less, the effect of providing the containing layer 40a so that at least part of the side surface of the light emitting element 20 does not face can be further improved.

In addition, by setting the thickness of the second reflective layer 40 to a range of, for example, 10 μm or more and 200 μm or less, in the step of centrifugally sedimenting the second reflective material 41, the surface tension of the second reflective layer 40 toward the side surface of the light emitting element 20 Crawling up can be suppressed, and the second reflective layer 40 can be arranged. Further, if the thickness of the second reflective layer 40 is equal to or less than the thickness of the light emitting element 20 and the bonding member (for example, bump) between the light emitting element 20 and the insulating substrate 2, it should not face the side surface of the light emitting element 20 described above. The effect of providing the containing layer 40a in the region can be further improved.

The thickness of the containing layer 40a in the second reflective layer 40 is preferably 10% or more and 100% or less of the thickness of the second reflective layer 40, and more preferably 25% or more and 50% or less.
The smaller the thickness ratio of the containing layer 40a in the second reflective layer 40, the higher the concentration of the second reflecting material 41 in the containing layer 40a. The content concentration of the second reflector 41 in the content layer 40 a is preferably higher than the content concentration of the first reflector 31 in the first reflection layer 30 . Since the second reflective layer 40 exposes the side surface of the light emitting element 20, it is preferably arranged as a thinner layer. Therefore, by increasing the content concentration of the second reflector 41 in the containing layer 40a, the light extraction efficiency is improved by exposing the side surface of the light emitting element 20, and the transmission and absorption of light at the bottom surface of the concave portion 15 are suppressed. can be compatible. The content concentration of the second reflector 41 in the content layer 40a can be, for example, 50% by mass or more and 70% by mass.
When a part of the side surface of the light emitting element 20 faces the containing layer 40a, the thickness of the containing layer 40a is preferably 1/4 or less, more preferably 1/6 or less, of the thickness of the side surface of the light emitting element 20. /8 or less is more preferable.

Examples of resin materials used for the first resin and the second resin include thermosetting resins such as epoxy resins, modified epoxy resins, silicone resins, and modified silicone resins.
The same resin material may be used for the first resin and the second resin, or different resin materials may be used.

The viscosity of the second resin is preferably 0.3 Pa·s or more and 15 Pa·s or less at room temperature (20±5° C.). If the viscosity of the second resin is 0.3 Pa·s or more, the second resin can be easily placed on the bottom surface of the concave portion 15 by potting. Also, if the viscosity of the second resin is 15 Pa·s or less, the shape of the second reflective layer 40 can be easily changed by centrifugal force. Furthermore, the centrifugal force makes it easier to settle the second reflector 41 . In addition, the viscosity of the second resin is more preferably 0.5 Pa·s or more and 6 Pa·s or less for obtaining the effect described above.
The viscosity of the second resin here is the viscosity in a state containing the second reflecting material 41, and as described later, the viscosity before the second reflecting material 41 contained in the second resin is sedimented by centrifugal force. is the viscosity of

Examples of the light reflecting material used for the first reflecting material 31 and the second reflecting material 41 include titanium oxide, silica, silicon oxide, aluminum oxide, zirconium oxide, magnesium oxide, potassium titanate, zinc oxide, and boron nitride. mentioned. Among them, it is preferable to use titanium oxide, which has a relatively high refractive index, from the viewpoint of light reflection.
The first reflector 31 and the second reflector 41 may be of the same type or of different types.

As the second reflector 41, it is preferable to use a material having a higher specific gravity than the resin material used for the second resin. Due to the difference in specific gravity between the second reflecting material 41 and the resin material, the second reflecting material 41 tends to settle toward the bottom surface due to centrifugal force. Furthermore, by using a material having a large particle size for the second reflecting material 41, the second reflecting material 41 can settle to the bottom surface side more quickly.
In addition, since the second reflective material 41 is arranged at high density by using centrifugal force, the distance between particles is reduced, light leakage and light transmission are suppressed, and the light reflectance in the second reflective layer 40 is reduced. can be improved.
The particle size of the second reflector 41 is preferably 0.1 μm or more and 1.0 μm or less. If the particle size of the second reflecting material 41 is 0.1 μm or more, the second reflecting material 41 is easily sedimented by centrifugal force. Also, if the particle size of the second reflector 41 is 1.0 μm or less, it is easy to reflect visible light. From the above viewpoint, the particle size of the second reflector 41 is more preferably 0.4 μm or more and 0.6 μm or less.

The light transmission layer 50 is made of a third resin containing phosphor 51 . The light transmission layer 50 is formed in contact with the first reflective layer 30 and arranged on the second reflective layer 40 and the light emitting element 20 .
Examples of resin materials used for the third resin include thermosetting resins such as epoxy resins, modified epoxy resins, silicone resins, and modified silicone resins. The resin material used for the third resin may be the same resin material as the first resin and the second resin, or may be a different resin material. Also, a resin having high heat resistance can be used for the first resin and the second resin, and a hard resin can be used for the third resin.
Silicone resins generally have higher light resistance in the vicinity of 450 nm or more and 500 nm or less than epoxy resins, and epoxy resins are harder than silicone resins. Therefore, a silicone resin may be used for the first resin and the second resin, and an epoxy resin may be used for the third resin.

The phosphor 51 is arranged on the upper surface of the light emitting element 20 , the inner surface of the first reflective layer 30 , and the upper surface of the second reflective layer 40 . By arranging the phosphor 51 on the upper surface of the light emitting element 20, the wavelength of the light from the light emitting element 20 can be efficiently converted and emitted to the outside. Further, by arranging the phosphor 51 on the inner surface of the first reflective layer 30, the light reflected by the first reflective layer 30 can be efficiently wavelength-converted and emitted to the outside. Further, by arranging the phosphor 51 on the upper surface of the second reflective layer 40, the light reflected by the second reflective layer 40 can be efficiently wavelength-converted and emitted to the outside.

As the phosphor 51, it is preferable to use a material having a higher specific gravity than the resin material used for the third resin. As a result, the phosphor 51 can naturally settle on the bottom surface side of the recess 15 in the third resin. Further, the phosphor 51 may be forcibly sedimented in the third resin by centrifugal force.
The particle size of the phosphor 51 is, for example, 3 μm or more and 50 μm or less.
The phosphor 51 may be dispersed in the third resin. By dispersing the phosphor 51 in the third resin, it is possible to reduce variations in the orientation of the light emitted from the light emitting device 100 .

As the phosphor 51, one known in the art can be used. For example, yellow phosphors such as YAG (Y ₃ Al ₅ O ₁₂ :Ce) and silicate; red phosphors such as CASN (CaAlSiN ₃ :Eu) and KSF (K ₂ SiF ₆ :Mn); ₄ : A green phosphor such as Eu ²⁺ can be used.

[Operation of Light Emitting Device]
When the light emitting device 100 is driven, current is supplied from the external power supply to the light emitting element 20 through the first wiring section 3, the via 4, the second wiring section 5 and the third wiring section 6, and the light emitting element 20 emits light. Of the light emitted by the light emitting element 20 , light L ₁ traveling upward is extracted to the outside above the light emitting device 100 . Further, the light L2 traveling downward is reflected by the containing layer 40a, emitted in the opening direction of the concave portion 15, and extracted to the outside of the light emitting device 100. _FIG . Also, the light L3 traveling in the lateral direction is reflected by the first reflective layer ₃₀ and emitted in the opening direction of the recess 15 to be extracted to the outside of the light emitting device 100 . As a result, leakage of light emitted from the light emitting element 20 from the bottom and side surfaces of the recess 15 can be suppressed as much as possible, and light extraction efficiency can be improved. Moreover, color unevenness can be reduced.

[Manufacturing Method of Light Emitting Device 100]
Next, an example of a method for manufacturing the light emitting device according to the embodiment will be described.
FIG. 2 is a flow chart of a method for manufacturing a light emitting device according to the embodiment. FIG. 3A is a cross-sectional view showing a step of mounting a light emitting element in the method of manufacturing the light emitting device according to the embodiment. 3B is a cross-sectional view showing a step of forming a first reflective layer in the method for manufacturing the light emitting device according to the embodiment; FIG. 3C is a plan view showing a step of forming a first reflective layer in the method of manufacturing the light emitting device according to the embodiment; FIG. FIG. 3D is a schematic diagram showing a step of forming the second reflective layer in the method for manufacturing the light emitting device according to the embodiment, in which the bottom surface of the concave portion of the package is covered with the second resin, and centrifugal force is applied to the second reflective material. It is a schematic diagram showing the step of settling the. FIG. 3E is a cross-sectional view showing a step of forming a second reflective layer in the method for manufacturing a light-emitting device according to the embodiment, and a cross-sectional view showing a state after the second reflective material is sedimented by centrifugal force. . FIG. 3F is a cross-sectional view showing a step of disposing a light transmissive layer in the method of manufacturing the light emitting device according to the embodiment;

The method for manufacturing the light emitting device 100 comprises a step S101 of placing a light emitting element, a step S102 of forming a first reflective layer, a step S103 of preparing a second resin, a step S104 of forming a second reflective layer, and a step S105 of arranging a light transmission layer. Note that the material, arrangement, etc. of each member are the same as those described in the description of the light emitting device 100 described above, so description thereof will be omitted as appropriate.

(Step of placing light emitting element)
The step S<b>101 of mounting the light emitting element is a step of mounting the light emitting element 20 on the bottom surface of the recess 15 of the package 10 having the recess 15 .
In this step S<b>101 , the light emitting element 20 is placed on the bottom surface of the recess 15 . The light-emitting element 20 is flip-chip mounted substantially at the center of the bottom surface of the recess using a conductive adhesive, using the electrode-formed surface as a mounting surface. As the conductive adhesive, for example, eutectic solder, conductive paste, bumps, or the like may be used. Moreover, the light emitting element 20 may be mounted face-up, and in this case, a non-conductive adhesive may be used.

(Step of forming first reflective layer)
The step S102 of forming the first reflective layer is a step of forming the first reflective layer 30 by coating the side surface of the concave portion 15 with the first resin containing the first reflective material 31 .
In this step S102, for example, a first resin that covers the side surface of the recess 15 is arranged by potting. The placement of the first resin in the concave portion 15 is performed by discharging the uncured resin material from the nozzle at the tip of the resin discharging device filled with the first resin to the vicinity of the outer edge of the bottom surface of the concave portion 15 (preferably the boundary with the side surface). can be done by The uncured first resin wets and spreads on the side surface of the recess 15 to cover the side surface of the recess 15 . At this time, since the first resin also flows to the bottom surface of the recess 15 , the first resin partially covers the outer edge of the bottom surface of the recess 15 . Here, it is preferable to adjust the viscosity and formation position of the first resin so that the first resin is separated from the side surface of the light emitting element 20 and rises above the side surface of the recess 15 . When the first reflective layer 30 is formed by potting, the viscosity of the first resin is adjusted to 1 Pa·s to 50 Pa·s at room temperature (20±5° C.), for example.

Further, in this step S102, the inner surface of the concave portion 15 can be soaked in advance with an organic solvent. By soaking the inner surface of the concave portion 15 in advance with an organic solvent, it is possible to promote the first resin to creep up to the side surface of the concave portion 15 . In addition, by using a material with high wettability for the side surface of the recess 15 or roughening the surface of the side surface, it is possible to promote the creeping up of the side surface of the recess 15 .
The first reflective material 31 is mixed in the first resin before curing, and the content concentration of the first reflective material 31 contained in the first resin should be 10% by mass or more and 50% by mass or less. is preferred.
The first resin wets and spreads over the side surfaces of the recess 15 by placing the first resin in the vicinity of the outer edge of the bottom surface of the recess 15 by potting. At this time, the first reflective layer 30 is in a state in which the first reflective material 31 is dispersed in the first resin.
After that, for example, the first resin is cured at a temperature of 120° C. or more and 200° C. or less to form the first reflective layer 30 . The curing of the first resin is preferably performed after the first resin has wetted and spread on the side surfaces of the recess 15 and the package is left standing.
In this step S102, the first reflective layer 30 is formed so that the inner edge portion is circular in plan view.

(Step of preparing second resin)
The step S103 of preparing the second resin is a step of mixing the main agent of the two-liquid curing resin material and the second reflecting material 41, and mixing the curing agent after a predetermined time or longer.
By using the second resin produced in this way, the second reflector 41 and the resin material can be made to fit well, and the second reflector 41 can be easily sedimented by centrifugal force. The temperature before mixing with the curing agent is about room temperature.
Examples of two-liquid curing resin materials include silicone resins, modified silicone resins, epoxy resins, and modified epoxy resins.
From the viewpoint of allowing the second reflecting material 41 to settle more easily, the time taken to mix the main component of the two-liquid curing resin material and the second reflecting material 41 is preferably two hours or longer. Moreover, the elapsed time is preferably 8 hours or less from the viewpoint of shortening the manufacturing time. After mixing the curing agent, the next step is performed before the second resin is cured.

(Step of forming second reflective layer)
The step S104 of forming the second reflective layer is a step of forming the second reflective layer 40 by contacting the first reflective layer 30 and covering the bottom surface of the concave portion 15 with a second resin containing the second reflective material 41 . is.
In this step S104, for example, an uncured second resin is placed on the bottom surface of the concave portion 15 by potting in the same manner as the first resin. At this time, the second resin is arranged on the bottom surface of the recess 15 between the side surface of the recess 15 and the light emitting element 20 . In addition, preferably, the second resin is arranged so as to be in contact with the first reflective layer 30 . As a result, it is possible to suppress the flow of the second resin toward the light emitting element 20 side, so it is possible to suppress the second resin from creeping up to the side surface of the light emitting element 20 before the centrifugal rotation. Crawling up of the second resin to the side surface of the light emitting element 20 is eliminated by changing the shape of the second resin due to centrifugal rotation. There is a possibility that it may remain on the side surface of the element 20 . Therefore, it is preferable that the second resin does not cover the side surface of the light emitting element 20 before centrifugal rotation.

Next, the package 10 is centrifugally rotated in the direction in which the centrifugal force is applied to the bottom surface of the recess 15 . As a result, the second resin moves toward the bottom surface of the recess 15 and covers the bottom surface of the recess 15 . At this time, even if the second resin covers part of the side surface of the light emitting element 20, centrifugal force prevents the side surface of the light emitting element 20 from wetting and spreading in the height direction. Furthermore, by utilizing this centrifugal force, the second resin second reflector 41 is forcibly deposited on the bottom surface side of the recess 15, thereby forming the translucent layer 40b and the containing layer 40a containing the second reflector 41. is formed.

Rotation of the package 10 is preferably performed by applying a centrifugal force to the package 10 with a rotating shaft 80 such that the bottom surface of the recess 15 faces outward. Specifically, the package 10 is moved in the A direction in which the package 10 revolves around the rotation shaft 80 so that the package 10 has the rotation shaft 80 on the upper surface side. Note that the B direction in FIG. 3D is a direction parallel to the bottom surface of the recess 15 . The rotating shaft 80 is parallel to the bottom surface of the recess 15 and positioned on a vertical line that passes through the approximate center of the bottom surface of the recess 15 , and is located on the side of the opening of the recess 15 with respect to the package 10 . As a result, centrifugal force acts in the direction of the bottom surface of the recess 15 , suppressing the spread of the second resin in the height direction of the package 10 , and the second reflecting material 41 contained in the second resin prevents the recess 15 from spreading. It is forcibly lowered to the bottom side (direction of arrow C in FIG. 3D). By curing the second resin in this state, the containing layer 40a containing the second reflecting material 41 and the translucent layer 40b are formed on the bottom surface of the recess 15 in this order.

In addition, the amount of the second reflective layer 40 to be applied and the content of the second reflective material 41 contained in the second resin are appropriately adjusted. Then, the second reflective layer 40 is formed so that the containing layer 40a does not face at least a portion of the side surface of the light emitting element 20 .
The rotation speed and number of revolutions when centrifugally rotating the package 10 depend on the content and particle diameter of the second reflecting material 41, but the number of revolutions and the radius of rotation are adjusted so that a centrifugal force of 200 x g or more is applied, for example. do it.

In the manufacturing process, when centrifugally rotating the package 10 in the state of the aggregated substrate before singulation, if the aggregated substrate is flat, the larger the flat area of the aggregated substrate (more specifically, the rotation direction As the board length at A increases, the package 10 at a position farther from the center of the collective board is displaced from the rotation axis 80 . For example, in the aggregate board, if the deviation in the B direction from the circumference of the revolving circle becomes large, the surface of the second resin is inclined with respect to the bottom surface of the recess 15, and the surface state of the second resin in the aggregate board. There is a risk that there will be variations in This shift can be suppressed by increasing the radius of rotation. Specifically, the deviation can be suppressed by setting the rotation radius to be 70 times or more the length of the collective substrates arranged in the rotation direction.
In the case of using a flexible resin package 10 such that the aggregate substrate bends along the circumference of the radius of rotation due to centrifugal force, the deviation is less likely to occur. Centrifugal rotation can be performed with a collective substrate that is larger than the substrate. This makes it possible to increase the number of processes performed at one time.

Moreover, in step S104, it is preferable to harden the second resin while causing the second reflecting material 41 to settle. From the viewpoint of light reflection, it is preferable to use the second reflecting material 41 with a small particle size. The reflecting material 41 is forced to sink. For this reason, in order to cure the second reflecting material 41 in a sedimented state, it is preferable to carry out the curing process of the second resin while maintaining the rotation, that is, while rotating.
It is also possible to cure the resin after stopping the rotation, but when the rotation stops, the resin tends to spread over the side surfaces of the light emitting element 20 due to its wettability. Therefore, by curing the second resin while rotating the package 10 , it is possible to prevent the second resin from crawling up the side surface of the light emitting element 20 . By exposing the side surface of the light emitting element 20 from the second resin, the light extraction efficiency can be further improved, and the light distribution chromaticity of the light emitting device 100 can be further improved.

At this time, the temperature for curing the second resin is 40° C. or higher and 200° C. or lower. By increasing the curing temperature, the time for curing the second resin can be shortened, which is efficient. Moreover, considering that the metal of the centrifugal sedimentation device expands due to heat and the rotating shaft 80 shakes, it is preferable that the hardening temperature is as low as possible. That is, the temperature for curing the second resin is preferably 50° C. or higher from the viewpoint of efficiency. Also, the temperature for hardening the second resin is preferably 60° C. or less, considering that the rotating shaft 80 may move. When curing at 80° C. or higher, it is preferable to adjust the device so that at least the metal portion of the centrifugal rotating device does not reach 80° C. or higher.
As the resin material forming the second resin, it is preferable to select a resin material that can obtain at least a provisionally cured state by keeping the rotating package 10 at a temperature of 40° C. or higher.
As a method of curing the second resin while causing the second reflecting material 41 to settle, for example, applying hot air or using a panel heater or the like can be mentioned.

(Step of arranging light-transmitting layer)
The step S<b>105 of arranging the light transmission layer is a step of arranging the light transmission layer 50 made of the third resin containing the phosphor 51 on the second reflective layer 40 and the light emitting element 20 .
In this step S105, the third resin is arranged in the concave portion 15 by potting, spraying, or the like. Also, the phosphor 51 naturally settles in the third resin and is arranged on the upper surface of the light emitting element 20 , the inner surface of the first reflective layer 30 , and the upper surface of the second reflective layer 40 . After that, the third resin is cured at a temperature of, for example, 120° C. or more and 200° C. or less to form the light transmission layer 50 .

As described above, the method for manufacturing a light-emitting device and the light-emitting device according to the present embodiment have been specifically described with the modes for carrying out the invention, but the gist of the present invention is not limited to these descriptions, and the claims should be interpreted broadly based on the scope statement. In addition, various changes and modifications based on these descriptions are also included in the gist of the present invention.

<<Other embodiments>>
FIG. 4 is a cross-sectional view schematically showing the configuration of a light emitting device according to another embodiment. FIG. 5 is a cross-sectional view schematically showing the configuration of a light emitting device according to another embodiment. FIG. 6 is a cross-sectional view schematically showing the configuration of a light emitting device according to another embodiment. FIG. 7A is a perspective view schematically showing the configuration of a light emitting device according to another embodiment. FIG. 7B is a cross-sectional view along line VIIB-VIIB of FIG. 7A. FIG. 8A is a plan view schematically showing the configuration of a light emitting device according to another embodiment. FIG. 8B is a cross-sectional view along line VIIIB-VIIIB of FIG. 8A. FIG. 8C is a cross-sectional view along line VIIIC-VIIIC of FIG. 8A. 9A is a plan view schematically showing the configuration of a light emitting device according to another embodiment. FIG. FIG. 9B is a cross-sectional view taken along line IXB-IXB of FIG. 9A.

A light-emitting device 100A shown in FIG. In the light-emitting device 100A, the light-emitting element 20 is placed on the bottom surface of the recess 15 via the bumps 60 . Thereby, the light emitting element 20 is raised in the height direction of the light emitting element 20 . The second reflective layer 40 is provided so that the side surface of the light emitting element 20 does not face the containing layer 40 a containing the second reflective material 41 . A second reflective layer 40 is provided so that the semiconductor layer 22 of the light emitting element 20 does not face the containing layer 40a.
With such a configuration, loss of primary light due to reflection on the side surface of the light emitting element 20 can be reduced. In addition, since the amount of primary light that can be extracted from the side surface of the light emitting element 20 is increased, multiple excitation of the phosphor 51 is suppressed, and the light distribution chromaticity of the light emitting device 100A can be further improved.
Au bumps, for example, can be used as the bumps 60 .

A light-emitting device 100B shown in FIG. 5 has a post 70 between the light-emitting element 20 and the bottom surface of the recess 15 . In the light emitting device 100B, the light emitting element 20 is placed on the bottom surface of the recess 15 via the post 70. As shown in FIG. Thereby, the light emitting element 20 is raised in the height direction of the light emitting element 20 . The second reflective layer 40 is provided so that the side surface of the light emitting element 20 does not face the containing layer 40 a containing the second reflective material 41 . A second reflective layer 40 is provided so that the semiconductor layer 22 of the light emitting element 20 does not face the containing layer 40a.
With such a configuration, loss of primary light due to reflection on the side surface of the light emitting element 20 can be reduced. In addition, by increasing the amount of primary light that can be extracted from the side surface of the light emitting element 20, multiple excitation of the phosphor 51 is suppressed, and the light distribution chromaticity of the light emitting device 100B can be further improved.
A Cu post, for example, can be used as the post 70 .

In the light-emitting device 100C shown in FIG. 6, the surface of the second reflective layer 40 is concave on the opening side. Such a surface state can be obtained by suppressing the rotational speed of the package 10 . In addition, the second reflective layer 40 may be in a state where the transparent layer 40b is not substantially formed. Even in this case, by curing the second resin while rotating, that is, in a state where centrifugal force is applied, the second reflective layer 40 is prevented from creeping up to the side surface of the light emitting element 20, and the first reflective layer The shape of the second resin can be changed so as to cover the entire bottom surface of the recess 15 exposed from 30 .
With such a configuration, loss of primary light due to reflection on the side surface of the light emitting element 20 can be reduced. In addition, since the amount of primary light that can be extracted from the side surface of the light emitting element 20 increases, multiple excitation of the phosphor 51 is suppressed, and the light distribution chromaticity of the light emitting device 100C can be further improved.

A light-emitting device 100D shown in FIGS. 7A and 7B has a light-emitting element 20 face-up mounted on the bottom surface of the recess 15 of the package 10A. The light emitting element 20 is mounted on the second lead 3b. Here, the N-side electrode of the light emitting element 20 is joined to the first lead 3a through the wire 23, and the P-side electrode is joined to the second lead 3b through the wire 24. As shown in FIG.
By face-up mounting the light emitting element 20, the semiconductor layer 22 of the light emitting element 20 can be arranged on the light extraction surface side, and the semiconductor layer 22 can be prevented from facing the containing layer 40a.
With such a configuration, loss of primary light due to reflection on the side surface of the light emitting element 20 can be reduced. In addition, since the amount of primary light that can be extracted from the side surface of the light emitting element 20 is increased, multiple excitation of the phosphor 51 is suppressed, and the light distribution chromaticity of the light emitting device 100D can be further improved.

A light-emitting device 100E shown in FIGS. 8A, 8B, and 8C has a package 10B that is rectangular in plan view and has a rectangular concave portion 15 that is rectangular in plan view. That is, in the package 10B, the distance in the X direction where the side surfaces of the recess 15 face each other in one direction is different from the distance in the Y direction orthogonal to the X direction. Note that the term “rectangular” here includes shapes that are generally rectangular, such as a shape in which a part of the corner is notched like the package 10B and a shape in which the corner is curved like the recess 15 . Also, the structure, members, etc. of the package 10B are similar to those of the package 10A, and detailed illustration and description are omitted. Also, in FIG. 8A, the curved portion 32 of the first reflective layer 30 is indicated by a broken line, and the curved portion of the second reflective layer 40 is indicated by a solid line.

The light emitting element 20 is placed in the center of the bottom surface of the recess 15 in plan view. Thus, in the light emitting device 100E, the distance from the light emitting element 20 to the side surface of the recess 15 in the X direction differs from the distance from the light emitting element 20 to the side surface of the recess 15 in the Y direction in plan view. That is, in the light emitting device 100E, the distance between the side surface of the light emitting element 20 and the side surface of the recess 15 in the longitudinal direction of the package 10B is equal to the distance between the side surface of the light emitting element 20 and the side surface of the recess 15 in the short direction of the package 10B. longer than Here, by making the shape of the recess 15 rectangular, the distance between the side surface of the light emitting element 20 and the side surface of the recess 15 in the longitudinal direction and the lateral direction is changed. may be square and the light emitting element 20 may be rectangular. Thus, the package 10B and the light emitting element 20 may be formed so that the distances from the light emitting element 20 to the side surface of the recess 15 in the X direction and the Y direction are different.

The first reflective layer 30 includes, in plan view, a curved portion 32 curved concavely toward the light emitting element 20 in the X direction, and at least a portion of the side surface of the recess 15 in the Y direction forming the light emitting element 20. and a gap portion 33 formed with a gap so as to face each other.
The curved portions 32 of the first reflective layer 30 are formed on one side (the left side in the drawing) and the other side (the right side in the drawing) in the X direction in plan view, and are provided on both sides in the longitudinal direction of the package 10B. there is Thus, the first reflective layer 30 is provided so as to cover the short-side side surfaces of the recess 15 . The curved portion 32 is formed such that its concave curved portion faces substantially the center of the side surface of the light emitting element 20 . Further, the curved portion 32 is formed such that the deepest portion of the curved portion faces substantially the center of the side surface of the light emitting element 20 .
In addition, the gap 33 of the first reflective layer 30 has the first reflective layer 30 facing the light emitting element 20 on one side (upper side in the drawing) and the other side (lower side in the drawing) in the Y direction. It is provided to form a gap that does not That is, in a plan view, the end portion 32a of the curved portion 32 is located on the extension line of the side surface of the light emitting element 20 parallel to the Y direction, or outside the extension line. As a result, of the side surfaces of the concave portion 15 in the Y direction, the portion facing the light emitting element 20 faces the side surface of the concave portion 15 via the light transmission layer 50 without facing the first reflective layer 30 .

By adopting such a configuration, the first reflective layer 30 is not arranged in the portion facing the light emitting element 20 in the Y direction where the distance from the side surface of the light emitting element 20 is short among the side surfaces of the concave portion 15. The second reflective layer 40 does not overlap the first reflective layer 30 . Therefore, the flatness of the surface of the second reflective layer 40 in the Y direction is improved. Thereby, for example, when the phosphor 51 is deposited in the third resin, the flatness of the sedimented layer of the phosphor 51 is improved, which is preferable. When the distance between the light-emitting element 20 and the first reflective layer 30 is short, and the second reflective layer 40 is arranged to overlap the first reflective layer 30 , the phosphor 51 nears the side surface of the light-emitting element 20 . placed higher. As a result, in this region, the ratio of the secondary light wavelength-converted by the phosphor 51 increases, and there is a possibility that uneven light emission may occur.

That is, in plan view, by ensuring a certain distance or more between the outer edge of the light emitting element 20 and the first reflective layer 30 (the side surface of the recess 15 facing the side surface where the first reflective layer 30 is not arranged), the light emitting element 20 A flat second reflective layer 40 is formed in the region near the outer periphery of the , and the light transmission layer 50 on the second reflective layer 40 can be arranged at a low position. This improves the luminous intensity distribution chromaticity of the light emitted from the light emitting device 100E. From this point of view, the distance between the light emitting element 20 and the first reflective layer 30 in plan view is preferably 100 μm or more, more preferably 300 μm or more. In addition, the distance between the light emitting element 20 and the first reflective layer 30 is preferably 1500 μm or less in order to facilitate the formation of the second reflective layer 40 by centrifugal force.

In addition, such a form of the first reflective layer 30 can be adjusted by adjusting the coating amount of the first resin containing the first reflective material, adjusting the coating position, or controlling the content of the first reflective material in the first resin. It can be controlled by adjusting the amount. When adjusting the content of the first reflecting material in the first resin, for example, 2.0 parts by mass or more of Aerosil (registered trademark) as the first reflecting material is 6.5 parts by mass with respect to 100 parts by mass of the first resin. For example, it may be contained in parts by mass or less.

Also, here, the first reflective layer 30 is formed with the gap portion 33 on the side surface of the concave portion 15 in the Y direction and is not provided on the portion facing the light emitting element 20 . However, the first reflective layer 30 may not be provided only on a portion of the side surface of the concave portion 15 in the Y direction that faces the light emitting element 20 . Also, the first reflective layer 30 may not be provided on a portion of the side surface of the concave portion 15 in the Y direction, other than the portion facing the light emitting element 20 , which does not face the light emitting element 20 . That is, the gap portion 33 can be set by changing the position of the end portion 32a of the curved portion 32 along the side surface of the concave portion 15 in the Y direction.
Note that the light emitting device 100E includes a protective element 90. As shown in FIG. Protective element 90 is, for example, a Zener diode.

A light-emitting device 100F shown in FIGS. 9A and 9B has a package 10C that is rectangular in plan view and has a rectangular concave portion 15 that is rectangular in plan view. The package 10C includes a support member 2d and a first lead 3c and a second lead 3d, which are a pair of electrodes. The support member 2d is a member that supports the first lead 3c and the second lead 3d in a predetermined arrangement. As the material of the support member 2d, for example, the same material as that of the insulating substrate 2 of the light emitting device 100 can be used. As the first lead 3c and the second lead 3d, for example, the same lead as the first wiring portion 3 of the light emitting device 100 can be used. In FIG. 9A, the second reflective layer 40 is transparent, and the curved portion 32 of the first reflective layer 30 is indicated by solid lines.

The light emitting element 20 is mounted at a position shifted from the center of the bottom surface of the recess 15 to one side of the recess 15 in plan view. Here, in plan view, the light emitting element 20 is shifted from the center of the bottom surface of the recess 15 to one side of the recess 15 in the X direction (the left side in the drawing) and the other side in the Y direction (the left side in the drawing) perpendicular to the X direction. , bottom). Specifically, the light-emitting element 20 is placed on the first lead 3c and placed obliquely downward to the left with respect to the center of the recess 15 in the drawing.

The first reflective layer 30 has curved portions 32 that curve from one side surface to the other side surface on one side surface of the opposing recessed portion 15 in plan view. Specifically, the curved portion 32 of the first reflective layer 30 extends from the side surface of the concave portion 15 on one side in the X direction toward the side surface of the concave portion 15 on the other side in the X direction (right side in the drawing) in plan view. curved. That is, the curved portion 32 is provided so as to curve concavely from one side in the Y direction to the other side in the X direction in plan view. Thereby, the first reflective layer 30 is provided so as to cover the side surface of the short side of the concave portion 15 on the other side in the X direction. One end 32a of the curved portion 32 is formed up to a position facing the light emitting element 20 on one side in the Y direction. Furthermore, the other end 32a of the curved portion 32 is not provided at a position facing the light emitting element 20 in the other Y direction. Therefore, the first reflective layer 30 is provided so as to face most of two adjacent side surfaces of the light emitting element 20, and is not provided at a position facing the other two adjacent side surfaces. ing. The curved portion 32 is positioned such that the deepest portion of the curved portion faces the light emitting element 20 .

An end portion 32a of the curved portion 32 extends to the side surface of the recessed portion 15 in the Y direction. Specifically, the end portion 32a located on the side surface of the recess 15 on one side in the Y direction (upper side in the drawing) is the end located on the side surface of the recessed portion 15 on the other side in the Y direction (lower side in the drawing). It is provided so as to be positioned on one side in the X direction from the portion 32a. By doing so, the curved portion 32 can be formed so that the deepest portion of the curved portion faces the light emitting element 20 .
With such a configuration, the distance from the side surface of the light emitting element 20 on the other side in the X direction to the first reflective layer 30 on the other side in the X direction is increased, and the light distribution chromaticity of the light emitting device 100F is improved. do.

In addition, such a form of the first reflective layer 30 can be adjusted by adjusting the coating amount of the first resin containing the first reflective material, adjusting the coating position, or controlling the content of the first reflective material in the first resin. It can be controlled by adjusting the amount. When adjusting the coating position, for example, coating from the coating position 16 can be mentioned.

In addition, in the light emitting devices 100E and 100F of FIGS. 8 and 9, the curvature radius of the curved portion 32 may be increased or decreased. Also, the curved portion 32 may be a part of an arc. Also, the position of the deepest portion of the curved portion 32 may be appropriately shifted in the X direction and the Y direction.

Further, the method for manufacturing a light-emitting device may include other steps between, or before and after each of the steps, as long as they do not adversely affect each of the steps. For example, a foreign matter removing step or the like for removing foreign matter mixed in during manufacturing may be included.

In addition, in the method for manufacturing a light-emitting device, the order of some steps is not limited, and the order may be changed. For example, the step of mounting the light emitting element may be performed after performing the step of forming the first reflective layer.
Further, for example, in the method for manufacturing a light-emitting device described above, the step of preparing the second resin is provided after the step of forming the first reflective layer. It may be performed between the step of placing and the step of forming the first reflective layer, or may be performed before the step of placing the light emitting element. Alternatively, the step of preparing the second resin may not be provided.

2 Insulating substrate 2a Substrate portion 2b First wall surface portion 2c Second wall surface portion 2d Support member 3 First wiring portion 3a First lead 3b Second lead 3c First lead 3d Second lead 4 Via 5 Second wiring portion 6 Second 3 wiring portion 7 plated layers 10, 10A, 10B, 10C package 15 concave portion 16 application position 20 light emitting element 21 substrate 22 semiconductor layer 23 wire 24 wire 30 first reflective layer 31 first reflective material 32 curved portion 32a edge of curved portion 33 Gap 40 Second reflective layer 40a Containing layer 40b Translucent layer 41 Second reflective material 50 Light transmissive layer 51 Phosphor 60 Bump 70 Post 80 Rotating shaft 90 Protective element 100, 100A, 100B, 100C, 100D, 100E, 100F Light emitting device A Package rotation direction B Direction parallel to the bottom surface of the recess C Directions L ₁ , L ₂ , L ₃ in which the second reflector sinks

Claims (7)

a package having a recess that is rectangular or square in plan view ;
a light emitting element placed on the bottom surface of the recess;
a first reflective layer that is separated from the light emitting element and continuously covers from the bottom surface of the recess to the side surface of the recess;
a second reflective layer that abuts on the side surface of the light emitting element and the first reflective layer and covers the entire bottom surface of the recess exposed from the light emitting element and the first reflective layer;
a light transmission layer disposed on the second reflective layer and the light emitting element;
A part of the side surface of the light emitting element is exposed from the second reflective layer, and the exposed side surface is covered with the light transmission layer ,
The light-emitting device, wherein the first reflective layer has a curved portion concavely curved toward the light-emitting element in plan view . 2. The light emitting device according to claim 1 , wherein the curved portion is positioned such that the deepest portion of the curved portion faces the light emitting element. The light emitting element is placed in the center of the bottom surface of the recess of the package in plan view,
In plan view, the distance from the light emitting element to the side surface of the recess in the X direction, which is the direction in which the side surfaces of the recess of the package face each other in one direction, and the distance from the light emitting element in the direction orthogonal to the X direction 3. The light-emitting device according to claim 1 , wherein the distance to the side surface of the recess in the Y direction is different. 3. The light emitting device according to claim 2 , wherein the first reflective layer is not arranged at a portion of the side surface of the recess that faces the light emitting element in a direction perpendicular to the direction in which the deepest portion faces the light emitting element. The second reflective layer includes a second reflective material and a second resin,
The light-emitting device according to any one of claims 1 to 4 , wherein the second reflective layer is arranged so that the second reflective material is biased toward the bottom surface of the recess. The light emitting device according to any one of claims 1 to 5 , wherein the upper end of the first reflective layer is arranged higher than the upper surface of the light emitting element. The light-emitting device according to any one of claims 1 to 6 , wherein the light-transmitting layer contains a phosphor.

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