JP7108121B2 - 金を含む薄膜の蒸着 - Google Patents
金を含む薄膜の蒸着 Download PDFInfo
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- JP7108121B2 JP7108121B2 JP2021203479A JP2021203479A JP7108121B2 JP 7108121 B2 JP7108121 B2 JP 7108121B2 JP 2021203479 A JP2021203479 A JP 2021203479A JP 2021203479 A JP2021203479 A JP 2021203479A JP 7108121 B2 JP7108121 B2 JP 7108121B2
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- 239000010931 gold Substances 0.000 title claims description 244
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims description 236
- 229910052737 gold Inorganic materials 0.000 title claims description 236
- 239000010409 thin film Substances 0.000 title claims description 144
- 230000008021 deposition Effects 0.000 title claims description 74
- 239000002243 precursor Substances 0.000 claims description 136
- 238000000151 deposition Methods 0.000 claims description 120
- 239000000376 reactant Substances 0.000 claims description 109
- 239000000758 substrate Substances 0.000 claims description 105
- 239000003446 ligand Substances 0.000 claims description 92
- 238000000034 method Methods 0.000 claims description 82
- 238000006243 chemical reaction Methods 0.000 claims description 62
- 239000012808 vapor phase Substances 0.000 claims description 44
- 229910052717 sulfur Inorganic materials 0.000 claims description 42
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 37
- 239000011593 sulfur Substances 0.000 claims description 37
- 239000007789 gas Substances 0.000 claims description 33
- 238000000231 atomic layer deposition Methods 0.000 claims description 30
- 125000000217 alkyl group Chemical group 0.000 claims description 25
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 23
- 239000006227 byproduct Substances 0.000 claims description 22
- 239000012071 phase Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 125000002524 organometallic group Chemical group 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 14
- 125000004122 cyclic group Chemical group 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 58
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 22
- 229910052711 selenium Inorganic materials 0.000 description 22
- 238000010926 purge Methods 0.000 description 21
- 239000011669 selenium Substances 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- -1 etc. Substances 0.000 description 6
- 125000004434 sulfur atom Chemical group 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QMMFVYPAHWMCMS-UHFFFAOYSA-N Dimethyl sulfide Chemical compound CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000000977 initiatory effect Effects 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- FJSKXQVRKZTKSI-UHFFFAOYSA-N 2,3-dimethylfuran Chemical compound CC=1C=COC=1C FJSKXQVRKZTKSI-UHFFFAOYSA-N 0.000 description 2
- 241000579895 Chlorostilbon Species 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229940116901 diethyldithiocarbamate Drugs 0.000 description 2
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 description 2
- 229910052876 emerald Inorganic materials 0.000 description 2
- 239000010976 emerald Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000002411 thermogravimetry Methods 0.000 description 2
- UJTDKNZVLGVLFT-UHFFFAOYSA-N 1,2-Bis(methylthio)ethane Chemical compound CSCCSC UJTDKNZVLGVLFT-UHFFFAOYSA-N 0.000 description 1
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 description 1
- RCBQQZSYZIIPIW-UHFFFAOYSA-N 6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-dioxooctanoic acid Chemical compound OC(=O)C(C)(C)C(=O)CC(=O)C(F)(F)C(F)(F)C(F)(F)F RCBQQZSYZIIPIW-UHFFFAOYSA-N 0.000 description 1
- FGAMHGRHEJFBPW-UHFFFAOYSA-N C[Au+]C Chemical compound C[Au+]C FGAMHGRHEJFBPW-UHFFFAOYSA-N 0.000 description 1
- AUFHQOUHGKXFEM-UHFFFAOYSA-N C[Au]C Chemical compound C[Au]C AUFHQOUHGKXFEM-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 description 1
- 241000233805 Phoenix Species 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- UAGGVDVXSRGPRP-UHFFFAOYSA-N diethylcarbamothioic s-acid Chemical compound CCN(CC)C(S)=O UAGGVDVXSRGPRP-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920006295 polythiol Polymers 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- SBYHFKPVCBCYGV-UHFFFAOYSA-N quinuclidine Chemical compound C1CC2CCN1CC2 SBYHFKPVCBCYGV-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 description 1
- RAOIDOHSFRTOEL-UHFFFAOYSA-N tetrahydrothiophene Chemical compound C1CCSC1 RAOIDOHSFRTOEL-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本願で特許請求される発明は、ヘルシンキ大学(the University of Helsinki)とASM Microchemistry Oyとの間の共同研究協約によって、又は共同研究協約のために、及び/又は共同研究協約に関連してなされた。当協約は、特許請求される発明がなされた日及びその日以前に発効しており、特許請求される発明は、当協約の範囲内で取り組まれた活動の結果としてなされたものである。
発明の背景
金を含む薄膜の蒸着
ブロック110で、基材表面を少なくとも一つの硫黄供与体配位子(すなわち、硫黄原子を介して金原子に結合された配位子)及び少なくとも一つのアルキル配位子を含む気相の金前駆体と接触させることと、
ブロック120で、任意の過剰な金前駆体及び反応副生成物がある場合には、これらを表面から除去することと、
ブロック130で、基材表面を気相の第二の反応物質と接触させることと、
ブロック140で、基材表面から、任意の過剰な第二の反応物質及び反応副生成物を除去することと、
所望の厚さの金を含む薄膜を形成するために、ブロック150で、接触する工程及び除去する工程を随意に繰り返すことと、を含む、少なくとも一つの成膜サイクルを含む、周期的蒸着方法100によって反応空間内で基材上に成膜される。
ブロック210で、基材の表面を、Me2Au(S2CNEt2)を含むEmを含む気相の金前駆体と接触させることと、
ブロック220で、任意の過剰な金前駆体及び反応副生成物がある場合には、これらを表面から除去することと、
ブロック230で、基材表面を、オゾンを含む気相の第二の反応物質と接触させることと、
ブロック240で、基材表面から、任意の過剰な酸素反応物質及び反応副生成物を除去することと、
所望の厚さの金を含む薄膜を形成するために、ブロック250で、接触する工程及び除去する工程を随意に繰り返すことと、を含む、少なくとも一つの成膜サイクルを含む、原子層成膜方法200によって反応空間内で基材上に成膜される。
基材の表面を、少なくとも一つの硫黄供与体配位子及び少なくとも一つのアルキル配位子を含む気相の金前駆体と接触させて、基材上に金前駆体又はその種の単分子層を最大に形成することと、
過剰な金前駆体及び反応副生成物がある場合には、これらを表面から除去することと、
基材表面を、オゾンを含む気相の第二の反応物質と接触させることと、
任意の過剰な第二の反応物質、及び金前駆体層とオゾンを含む第二の反応物質との間の反応で形成された任意の気体の副生成物を表面から除去することと、を含む少なくとも一つの成膜サイクルを含むALD型方法によって、基材上に形成される。
金前駆体
第二の反応物質
薄膜特性
ジメチル金のジエチルジチオカルバマトの熱特性(III)(Me2Au(S2CNEt2))を調査した。Me2Au(S2CNEt2)は、室温で固体であることがわかった。加熱時、Me2Au(S2CNEt2)が約40℃~約44℃で溶融することが見いだされた。図3に示す通り、Me2Au(S2CNEt2)(10℃/分の加熱率、10mgサンプルサイズ、1atmでN2流量)に対する熱重量分析(TGA)曲線は、約220°C未満のほぼ完全な蒸発を示す。
実施例2
実施例3
実施例4
実施例5
Claims (19)
- 反応空間内の基材上に金からなる薄膜を形成するための方法であって、
前記方法が、
前記基材を気相の有機金属金前駆体及び気相の第二の反応物質と順次接触させることを含み、
ここで、前記気相の有機金属金前駆体が、硫黄と有機金属配位子とを含み、
前記気相の有機金属金前駆体及び前記気相の第二の反応物質が反応して、金を含む前記薄膜を形成する、
前記基材を前記気相の有機金属金前駆体及び前記気相の第二の反応物質と順次接触させることが、二回以上繰り返す成膜サイクルを含む、方法。 - 前記気相の有機金属金前駆体が、少なくとも1つのアルキル配位子を含む、請求項1に記載の方法。
- 前記気相の有機金属金前駆体の金は、酸化状態+IIIを有する、請求項1に記載の方法。
- 前記成膜サイクルは、前記基材を前記気相の有機金属金前駆体と接触させた後、前記基材を前記気相の第二の反応物質と接触させる前に、前記反応空間から過剰な気相の有機金属金前駆体及び反応副生成物を除去することをさらに含む、請求項1に記載の方法。
- 前記成膜サイクルは、前記基材を前記気相の第二の反応物質と接触させた後に、前記反応空間から過剰な第二の反応物質及び反応副生成物を除去することをさらに含む、請求項1に記載の方法。
- 金を含む前記薄膜は、成膜サイクルあたり0.8Å以上の成長速度を有する、請求項1に記載の方法。
- 金を含む前記薄膜は、100成膜サイクル後に連続的である、請求項1に記載の方法。
- 前記気相の有機金属金前駆体が、一つ又は複数の中性付加物を含む、請求項1に記載の方法。
- 前記気相の有機金属金前駆体が、ジエチルジチオカルバマト配位子を含む、請求項1に記載の方法。
- 前記気相の有機金属金前駆体が、Me2Au(S2CNEt2)を含む、請求項9に記載の方法。
- 前記気相の第二の反応物質が酸素を含む、請求項1に記載の方法。
- 前記気相の第二の反応物質が酸素の反応種を含む、請求項11に記載の方法。
- 前記気相の第二の反応物質がオゾンを含む、請求項12に記載の方法。
- 前記方法が、120℃~220℃の成膜温度を有する、請求項1に記載の方法。
- 金を含む前記薄膜は、20nm~50nmの厚さを有する、請求項1に記載の方法。
- 金を含む前記薄膜が、連続的である、請求項15に記載の方法。
- 金を含む前記薄膜が、20μΩcm未満の抵抗率を有する、請求項1に記載の方法。
- 前記方法は、原子層成膜(ALD)法である、請求項1に記載の方法。
- 前記方法が、周期的化学蒸着(CVD)法である、請求項1に記載の方法。
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KR20210120129A (ko) | 2021-10-06 |
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TWI737884B (zh) | 2021-09-01 |
US10145009B2 (en) | 2018-12-04 |
US20230175132A1 (en) | 2023-06-08 |
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US11047046B2 (en) | 2021-06-29 |
US20180209041A1 (en) | 2018-07-26 |
CN110199052A (zh) | 2019-09-03 |
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US20210277519A1 (en) | 2021-09-09 |
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US20190071775A1 (en) | 2019-03-07 |
US11499227B2 (en) | 2022-11-15 |
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