JP7094714B2

JP7094714B2 - Electronics

Info

Publication number: JP7094714B2
Application number: JP2018024068A
Authority: JP
Inventors: 大内藤
Original assignee: Canon Inc
Current assignee: Canon Inc
Priority date: 2018-02-14
Filing date: 2018-02-14
Publication date: 2022-07-04
Anticipated expiration: 2038-02-14
Also published as: JP2019140602A

Description

本発明は、電子機器に関し、特に撮像デバイスや表示デバイスといった、デバイス面内の温度分布により、その特性が変化する電子機器に関する。 The present invention relates to an electronic device, and more particularly to an electronic device whose characteristics change depending on a temperature distribution in the device surface, such as an imaging device and a display device.

近年の撮像装置では、４Ｋ撮影や高速連写撮影などで撮像素子の読み出し量が増加し、撮像素子自身、または撮像素子を搭載する基板に実装された画像信号処理ＩＣなどの発熱を受け、撮像素子が非常に高温となる場合がある。特に、撮像素子の一部分が高温、その他の部分が比較的低温となり、撮像素子面内で温度勾配が生じると、暗電流差が発生し、輝度ムラ、色ムラおよび画素欠陥ムラといった画質の低下を招いてしまう。 In recent image pickup devices, the amount of reading of the image sensor increases in 4K shooting and high-speed continuous shooting, and the image sensor itself or the image signal processing IC mounted on the substrate on which the image sensor is mounted receives heat from the image pickup. The element may become very hot. In particular, when a part of the image sensor becomes high temperature and the other part becomes relatively low temperature and a temperature gradient occurs in the image sensor surface, a dark current difference occurs, and the image quality deteriorates such as luminance unevenness, color unevenness, and pixel defect unevenness. I invite you.

また、撮像装置や携帯電話などの電子機器に搭載される液晶表示パネルでは、一般的に、パネル面内が均一温度の条件下で透過率や階調特性があらかじめ調整されている。液晶表示パネルでは、パネル面内に温度勾配が生じると、透過率や階調特性がずれてしまうため、階調潰れなどの現象が発生し、表示画質が著しく低下してしまう。 Further, in a liquid crystal display panel mounted on an electronic device such as an image pickup device or a mobile phone, the transmittance and gradation characteristics are generally adjusted in advance under the condition that the inside of the panel surface has a uniform temperature. In a liquid crystal display panel, when a temperature gradient is generated in the panel surface, the transmittance and gradation characteristics are deviated, so that a phenomenon such as gradation collapse occurs and the display image quality is significantly deteriorated.

特許文献１では、撮像素子周辺の枠体内に配置された潜熱蓄熱材の相変化温度時間を利用して、撮像素子の温度上昇に要する時間を一時的に延長させる撮像ユニットが開示されている。また、特許文献２では、撮像素子の裏面に金属部材を介して配置された潜熱蓄熱材により、撮像素子の温度上昇時間を延長させる撮像素子モジュールが開示されている。 Patent Document 1 discloses an image pickup unit that temporarily extends the time required for the temperature rise of the image pickup element by utilizing the phase change temperature time of the latent heat storage material arranged in the frame around the image pickup element. Further, Patent Document 2 discloses an image sensor module that prolongs the temperature rise time of the image sensor by using a latent heat storage material arranged on the back surface of the image sensor via a metal member.

特開２０１５－１９８３１９号公報JP-A-2015-198319 特開２０１３－２２９８９４号公報Japanese Unexamined Patent Publication No. 2013-229894

上述の特許文献に開示された従来技術では、潜熱蓄熱材は撮像素子の周囲、または裏面に配置されるため、撮像素子内、または撮像素子を搭載する撮像基板に温度勾配がある場合、発熱時にその温度差が保たれたまま、撮像素子全体の温度が上昇する。その結果、暗電流差による画質の低下が発生してしまう。 In the prior art disclosed in the above-mentioned patent document, the latent heat storage material is arranged around or on the back surface of the image pickup device. The temperature of the entire image sensor rises while the temperature difference is maintained. As a result, the image quality is deteriorated due to the difference in dark current.

本発明は、デバイス面内の温度勾配の発生を抑制可能な電子機器を提供することを目的とする。 An object of the present invention is to provide an electronic device capable of suppressing the generation of a temperature gradient in a device surface.

本発明の一側面としての電子機器は、電気信号を処理するためのデバイスと、前記デバイスに形成され、前記デバイスの駆動により温度が上昇する発熱部材と、前記デバイスに取り付けられ、相変化することで第１の相変化温度を所定時間だけ維持可能な第１の潜熱蓄熱材と、前記デバイスに取り付けられ、相変化することで前記第１の相変化温度より高い第２の相変化温度を所定時間だけ維持可能な第２の潜熱蓄熱材と、前記デバイスの前記発熱部材が形成されている面とは反対側の面に取り付けられ、撮像光学系により結像された被写体像を光電変換する撮像素子と、を有し、前記第１の潜熱蓄熱材は、前記第２の潜熱蓄熱材よりも前記発熱部材の近くに設けられていることを特徴とする。

The electronic device as one aspect of the present invention is attached to the device, a device for processing an electric signal, a heat generating member formed in the device and whose temperature rises by driving the device, and a phase change. A first latent heat storage material capable of maintaining the first phase change temperature for a predetermined time, and a second phase change temperature higher than the first phase change temperature by being attached to the device and undergoing a phase change are determined. An image pickup in which a second latent heat storage material that can be maintained for a certain period of time and a subject image that is attached to a surface of the device opposite to the surface on which the heat generation member is formed and is imaged by an image pickup optical system is photoelectrically converted. The first latent heat storage material comprises an element, and is characterized in that the first latent heat storage material is provided closer to the heat generating member than the second latent heat storage material.

本発明によれば、デバイス面内の温度勾配の発生を抑制可能な電子機器を提供することができる。 According to the present invention, it is possible to provide an electronic device capable of suppressing the generation of a temperature gradient in the device surface.

実施例１の撮像素子ユニットの分解斜視図である。It is an exploded perspective view of the image sensor unit of Example 1. FIG. 撮像基板に潜熱蓄熱材を取り付けずに動画撮影または高速連写撮影を行った場合の撮像素子の温度グラフである。It is a temperature graph of the image sensor when moving image shooting or high-speed continuous shooting was performed without attaching a latent heat storage material to an image pickup board. 撮像基板に単一の相変化温度を持つ潜熱蓄熱材を取り付けて動画撮影または高速連写撮影を行った場合の撮像素子の温度グラフである。It is a temperature graph of the image sensor in the case where the latent heat storage material having a single phase change temperature is attached to the image pickup board, and the moving image shooting or the high-speed continuous shooting shooting is performed. 撮像基板に本実施例の異なる相変化温度を持つ潜熱蓄熱材を取り付けて動画撮影または高速連写撮影を行った場合の撮像素子の温度グラフである。It is a temperature graph of the image pickup device in the case where the latent heat storage material having a different phase change temperature of this Example is attached to the image pickup board, and moving image shooting or high-speed continuous shooting shooting is performed. 撮像基板に潜熱蓄熱材を取り付けずに動画撮影または高速連写撮影を繰り返し行った場合の撮像素子の温度グラフである。It is a temperature graph of the image sensor in the case where moving image shooting or high-speed continuous shooting is repeated without attaching a latent heat storage material to an image pickup board. 撮像基板に単一の相変化温度を持つ潜熱蓄熱材を取り付けて動画撮影または高速連写撮影を繰り返し行った場合の撮像素子の温度グラフである。It is a temperature graph of an image sensor when a latent heat storage material having a single phase change temperature is attached to an image pickup board, and moving image shooting or high-speed continuous shooting shooting is repeated. 撮像基板に本実施例の異なる相変化温度を持つ潜熱蓄熱材を取り付けて動画撮影または高速連写撮影を繰り返し行った場合の撮像素子の温度グラフである。It is a temperature graph of the image pickup device in the case where the latent heat storage material having a different phase change temperature of this Example is attached to the image pickup board, and moving image shooting or high-speed continuous shooting shooting is repeated. 実施例２の撮像装置の背面カバー部の分解斜視図である。It is an exploded perspective view of the back cover part of the image pickup apparatus of Example 2. FIG.

以下、本発明の実施例について、図面を参照しながら詳細に説明する。各図において、同一の部材については同一の参照番号を付し、重複する説明は省略する。 Hereinafter, examples of the present invention will be described in detail with reference to the drawings. In each figure, the same member is given the same reference number, and duplicate description is omitted.

図１（ａ）は、正面から見た場合の本実施例の撮像素子ユニット（電子機器）１の分解斜視図である。図１（ｂ）は、背面から見た場合の撮像素子ユニット１の分解斜視図である。撮像素子ユニット１は、撮像素子１０、ローパスフィルタ１１、ローパスフィルタ保持部材１２、撮像基板２０、撮像素子保持部材３０、シールド板金４０、第１の潜熱蓄熱材５１および第２の潜熱蓄熱材５２を有する。 FIG. 1A is an exploded perspective view of the image sensor unit (electronic device) 1 of the present embodiment when viewed from the front. FIG. 1B is an exploded perspective view of the image pickup device unit 1 when viewed from the back surface. The image sensor unit 1 includes an image sensor 10, a low-pass filter 11, a low-pass filter holding member 12, an image pickup substrate 20, an image sensor holding member 30, a shield sheet metal 40, a first latent heat storage material 51, and a second latent heat storage material 52. Have.

撮像素子１０には、フォトダイオードが配列されている。フォトダイオードは、レンズ等の撮像光学系により結像された被写体像を光電変換によりアナログ電気信号に変換し、撮像基板２０に受け渡す。ローパスフィルタ１１は、水晶からなる１枚の複屈折板であり、撮影画像にモアレや偽色が発生することを防ぐため、撮像素子１０の被写体側に配置されている。ローパスフィルタ保持部材１２は、樹脂製部材であり、両面テープまたは接着によりローパスフィルタ１１を保持し、さらにビス３１１によって撮像素子保持部材３０に締結される。撮像素子保持部材３０は、ステンレスやアルミなどの金属部材であり、裏面から撮像素子１０がビス３１２、３１３、３１４により締結される。撮像素子保持部材３０には、ビス穴３０１、３０２、３０３が設けられており、不図示のカメラ本体部材への固定に用いられる。 A photodiode is arranged in the image pickup device 10. The photodiode converts a subject image imaged by an image pickup optical system such as a lens into an analog electric signal by photoelectric conversion, and passes it to the image pickup substrate 20. The low-pass filter 11 is a single birefringent plate made of quartz, and is arranged on the subject side of the image pickup device 10 in order to prevent moire and false colors from occurring in the captured image. The low-pass filter holding member 12 is a resin member, holds the low-pass filter 11 by double-sided tape or adhesive, and is further fastened to the image sensor holding member 30 by a screw 311. The image sensor holding member 30 is a metal member such as stainless steel or aluminum, and the image sensor 10 is fastened from the back surface by screws 312, 313, and 314. The image sensor holding member 30 is provided with screw holes 301, 302, and 303, and is used for fixing to a camera body member (not shown).

撮像基板２０には、被写体側に撮像素子１０のリード部１０３に対する接続ランド部２０１が設けられており、はんだ付けによって撮像素子１０が実装される。撮像基板２０の撮像素子１０が実装される第１面の反対側の第２面には、ＡＤ変換ＩＣ（発熱部材）２１が形成されている。また、撮像基板２０の第２面には、コネクタ２２およびシールドコンタクト２３などの部品類が実装されている。ＡＤ変換ＩＣ２１は、撮像素子１０からのアナログ電気信号をデジタル信号に変換する。コネクタ２２は、ＡＤ変換ＩＣ２１からのデジタル信号を、他基板に受け渡すための不図示のフレキシブル基板やハーネス等が取り付けられる。仮に、コネクタ２２が撮像基板２０の左右どちらかの端部に実装されていた場合、フレキシブル基板やハーネスのテンションが撮像基板２０に伝わると、撮像基板２０が撮像光軸に対して垂直でなくなる、いわゆる片ボケ状態になってしまう。片ボケ状態になることを防ぐために、コネクタ２２は、撮像基板２０の略中心、すなわち撮像素子１０の略中心に実装される。 The image pickup board 20 is provided with a connection land portion 201 for the lead portion 103 of the image pickup element 10 on the subject side, and the image pickup element 10 is mounted by soldering. An AD conversion IC (heat generating member) 21 is formed on the second surface opposite to the first surface on which the image pickup element 10 of the image pickup substrate 20 is mounted. Further, parts such as the connector 22 and the shield contact 23 are mounted on the second surface of the image pickup board 20. The AD conversion IC 21 converts an analog electric signal from the image pickup device 10 into a digital signal. A flexible board (not shown), a harness, or the like for passing a digital signal from the AD conversion IC 21 to another board is attached to the connector 22. If the connector 22 is mounted on either the left or right end of the image pickup board 20, when the tension of the flexible board or the harness is transmitted to the image pickup board 20, the image pickup board 20 is not perpendicular to the image pickup optical axis. It becomes a so-called one-sided blur state. In order to prevent a one-sided blur state, the connector 22 is mounted at the substantially center of the image pickup board 20, that is, at the substantially center of the image pickup element 10.

シールド板金４０は、ブリキ等の板金でできており、ＡＤ変換ＩＣ２１などを覆うことで、外来ノイズが撮像信号に伝達し、画質が低下することを防いでいる。シールド板金４０は、ビス３１２、３１３、３１４によって撮像素子保持部材３０と、またシールドコンタクト２３によっても、ＧＮＤ接続がなされている。 The shield sheet metal 40 is made of a sheet metal such as tin and covers the AD conversion IC 21 or the like to prevent external noise from being transmitted to the image pickup signal and degrading the image quality. The shield sheet metal 40 is GND-connected to the image sensor holding member 30 by screws 312, 313, and 314, and also by the shield contact 23.

第１の潜熱蓄熱材５１および第２の潜熱蓄熱材５２は、撮像基板２０の撮像素子１０が実装される第１面の反対側の第２面の両側にコネクタ２２を挟んで配置されている。第１の潜熱蓄熱材５１および第２の潜熱蓄熱材５２は、弾性を有し、撮像基板２０とシールド板金４０との間に挟まれるようにシールド板金４０により保持される。潜熱蓄熱材は、熱を吸収すると固体から液体に相変化し、相変化中は熱を吸収しても温度が変化せず、単位体積当たりの熱吸収量が大きい材料、例えば、硫酸ナトリウム水和物、酢酸ナトリウム水和物およびエリスリトール等で構成される。潜熱蓄熱材の構成要素は、相変化する材料（相変化材料）であればよく、上述の材料に限定されるものではない。また、相変化温度の異なる複数の材料を組み合わせることで、相変化温度を容易に設定可能である。例えば、硫酸ナトリウム水和物は２０度程度、酢酸ナトリウム水和物は４５度程度、エリスリトールは９０度程度で相変化する。これらを潜熱蓄熱材の内部に比率を決めて配合することで、所望の相変化温度を有する潜熱蓄熱材を得ることが可能である。第１の潜熱蓄熱材５１および第２の潜熱蓄熱材５２では、相変化材料をマイクロカプセルに封入したものが、シリコンゲルシート等の弾性および熱伝導性を有するシート内部にちりばめられている。第１の潜熱蓄熱材５１および第２の潜熱蓄熱材５２は、内部に配合する相変化材料の特性および比率を異ならせているため、相変化温度が異なる。本実施例では、第１の潜熱蓄熱材５１は、相変化することで第１の相変化温度を所定時間だけ維持可能である。また、第２の潜熱蓄熱材５２は、相変化することで第２の相変化温度を所定時間だけ維持可能である。第１の相変化温度は、第２の相変化温度に比べて低く設定されている。 The first latent heat storage material 51 and the second latent heat storage material 52 are arranged with connectors 22 on both sides of the second surface opposite to the first surface on which the image pickup element 10 of the image pickup board 20 is mounted. .. The first latent heat storage material 51 and the second latent heat storage material 52 have elasticity and are held by the shield sheet metal 40 so as to be sandwiched between the image pickup substrate 20 and the shield sheet metal 40. The latent heat storage material undergoes a phase change from a solid to a liquid when it absorbs heat, and the temperature does not change even if it absorbs heat during the phase change, and a material having a large amount of heat absorption per unit volume, for example, sodium sulfate hydration. It is composed of a substance, sodium acetate hydrate, erythritol, etc. The component of the latent heat storage material may be any material that changes phase (phase change material), and is not limited to the above-mentioned material. Further, the phase change temperature can be easily set by combining a plurality of materials having different phase change temperatures. For example, sodium sulfate hydrate changes its phase at about 20 degrees, sodium acetate hydrate changes its phase at about 45 degrees, and erythritol changes at about 90 degrees. By blending these in the latent heat storage material at a determined ratio, it is possible to obtain a latent heat storage material having a desired phase change temperature. In the first latent heat storage material 51 and the second latent heat storage material 52, a phase change material encapsulated in a microcapsule is studded inside a sheet having elasticity and thermal conductivity such as a silicon gel sheet. Since the first latent heat storage material 51 and the second latent heat storage material 52 have different characteristics and ratios of the phase change materials blended therein, the phase change temperatures are different. In this embodiment, the first latent heat storage material 51 can maintain the first phase change temperature for a predetermined time by changing the phase. Further, the second latent heat storage material 52 can maintain the second phase change temperature for a predetermined time by changing the phase. The first phase change temperature is set lower than the second phase change temperature.

撮像基板２０に実装されている素子のうち、撮像基板２０の駆動により発熱量が最大となるのはＡＤ変換ＩＣ２１である。ＡＤ変換ＩＣ２１は、動画撮影または高速連写撮影が行われる際に多量の画像信号のアナログ－デジタル変換を行う。そのため、動画撮影または高速連写撮影を連続して行うと、ＡＤ変換ＩＣ２１が高温となり、撮像基板２０のＡＤ変換ＩＣが実装された第２面上でコネクタ２２を挟んで左右の温度差が生じ、その温度差は撮像基板２０の第１面に実装された撮像素子１０にも及ぶ。その結果、撮像素子１０にも左右の温度差が生じ、暗電流差による輝度ムラ、色ムラおよび画素欠陥ムラといった画質の低下を招いてしまう。本実施例では、動画撮影または高速連写撮影を行う際に生じる撮像素子１０の温度差を抑制するため、相変化温度の異なる第１の潜熱蓄熱材５１および第２の潜熱蓄熱材５２が撮像基板２０上に取りつけられている。 Among the elements mounted on the image pickup board 20, the AD conversion IC 21 has the maximum amount of heat generated by driving the image pickup board 20. The AD conversion IC 21 performs analog-to-digital conversion of a large amount of image signals when moving image shooting or high-speed continuous shooting is performed. Therefore, when moving image shooting or high-speed continuous shooting is continuously performed, the temperature of the AD conversion IC 21 becomes high, and a temperature difference between the left and right sides occurs across the connector 22 on the second surface on which the AD conversion IC of the image pickup board 20 is mounted. The temperature difference extends to the image pickup device 10 mounted on the first surface of the image pickup substrate 20. As a result, a temperature difference between the left and right sides also occurs in the image pickup device 10, which causes deterioration of image quality such as luminance unevenness, color unevenness, and pixel defect unevenness due to the dark current difference. In this embodiment, in order to suppress the temperature difference of the image pickup element 10 that occurs when performing moving image shooting or high-speed continuous shooting, the first latent heat storage material 51 and the second latent heat storage material 52 having different phase change temperatures image. It is mounted on the substrate 20.

図２は、撮像基板２０に潜熱蓄熱材を取り付けずに動画撮影または高速連写撮影を行った場合の撮像素子１０の温度グラフである。横軸は時刻、縦軸は撮像素子１０の左右部の温度である。曲線６１は撮像素子１０のＡＤ変換ＩＣ２１の裏側に対応する片端部１０１の温度、曲線６２はその反対側の片端部１０２の温度を示している。 FIG. 2 is a temperature graph of the image pickup device 10 when moving image shooting or high-speed continuous shooting is performed without attaching the latent heat storage material to the image pickup board 20. The horizontal axis is the time, and the vertical axis is the temperature of the left and right parts of the image sensor 10. The curve 61 shows the temperature of one end 101 corresponding to the back side of the AD conversion IC 21 of the image sensor 10, and the curve 62 shows the temperature of the one end 102 on the opposite side.

動画撮影または高速連写撮影が開始されると、撮像素子１０自身の発熱により、片端部１０１、１０２の温度はともに上昇する。その後、片端部１０１の温度は、ＡＤ変換ＩＣ２１の発熱の影響を受け、片端部１０２の温度よりも大幅に上昇する。その結果、撮像素子１０の面内で温度勾配が顕著となる。撮像素子１０の面内の温度差許容値が温度差Ａである場合、片端部１０１、１０２間の温度差が画質に対して許容範囲となる時間は撮影開始時刻から時刻Ｘまでの時間である。その後の動画撮影や高速連写撮影では、撮像素子１０の面内の温度差が温度差Ａを超え、画質の低下が顕著な状態となってしまう。 When moving image shooting or high-speed continuous shooting is started, the temperatures of the one-end portions 101 and 102 both rise due to the heat generated by the image sensor 10 itself. After that, the temperature of the one-end portion 101 is affected by the heat generated by the AD conversion IC 21, and is significantly higher than the temperature of the one-end portion 102. As a result, the temperature gradient becomes remarkable in the plane of the image pickup device 10. When the allowable temperature difference in the plane of the image sensor 10 is the temperature difference A, the time during which the temperature difference between the one end portions 101 and 102 is within the allowable range for the image quality is the time from the shooting start time to the time X. .. In the subsequent moving image shooting or high-speed continuous shooting, the temperature difference in the plane of the image sensor 10 exceeds the temperature difference A, and the image quality is significantly deteriorated.

図３は、撮像基板２０に単一の相変化温度を持つ潜熱蓄熱材を取り付けて動画撮影または高速連写撮影を行った場合の撮像素子１０の温度グラフである。横軸は時刻、縦軸は撮像素子１０の左右部の温度である。曲線６１は撮像素子１０のＡＤ変換ＩＣ２１の裏側に対応する片端部１０１の温度、曲線６２はその反対側の片端部１０２の温度を示している。 FIG. 3 is a temperature graph of the image pickup device 10 when a latent heat storage material having a single phase change temperature is attached to the image pickup substrate 20 to perform moving image photography or high-speed continuous photography. The horizontal axis is the time, and the vertical axis is the temperature of the left and right parts of the image sensor 10. The curve 61 shows the temperature of one end 101 corresponding to the back side of the AD conversion IC 21 of the image sensor 10, and the curve 62 shows the temperature of the one end 102 on the opposite side.

動画撮影または高速連写撮影が開始されると、片端部１０１、１０２の温度はともに上昇する。潜熱蓄熱材の相変化温度付近では、片端部１０１、１０２およびＡＤ変換ＩＣ２１の発熱が潜熱蓄熱材に吸収され、潜熱蓄熱材の内部では相変化が生じる。そのため、片端部１０１、１０２の温度は、一時的に均一となる。片端部１０１の温度は、片端部１０２と比較し、ＡＤ変換ＩＣ２１の発熱に応じて先に相変化温度付近で一定となる。その後、片端部１０２も相変化温度付近で一定となり、両者の温度は一時的に等しくなる。 When the moving image shooting or the high-speed continuous shooting is started, the temperatures of the one end portions 101 and 102 both rise. In the vicinity of the phase change temperature of the latent heat storage material, the heat generated by the one end portions 101, 102 and the AD conversion IC 21 is absorbed by the latent heat storage material, and a phase change occurs inside the latent heat storage material. Therefore, the temperatures of the one-sided portions 101 and 102 are temporarily uniform. The temperature of the one-end portion 101 becomes constant in the vicinity of the phase change temperature first in response to the heat generation of the AD conversion IC 21 as compared with the one-end portion 102. After that, the one end 102 also becomes constant near the phase change temperature, and the temperatures of both become temporarily equal.

片端部１０１、１０２の温度が一時的に等しくなった後、撮像素子１０およびＡＤ変換ＩＣ２１の発熱がさらに進むと、相変化が終了した潜熱蓄熱材はそれ以上の蓄熱ができなくなる。そのため、片端部１０１は、撮像素子１０自身やＡＤ変換ＩＣ２１の発熱に応じて、より多くの熱を蓄熱し、片端部１０２より先に温度上昇が進む。片端部１０２の温度は片端部１０１の温度に比べて緩やかに上昇するため、片端部１０２の蓄熱が飽和するのも遅い。片端部１０１の蓄熱が終了した後、片端部１０１、１０２間の温度差は開いていく。撮像素子１０の温度が飽和し、一定の温度になるまで片端部１０１、１０２間に温度差がある状態が継続する。撮像素子１０の面内の温度差許容値が温度差Ａである場合、片端部１０１、１０２間の温度差が画質に対して許容範囲となる時間は撮影開始時刻から時刻Ｙまでの時間である。その後の動画撮影や高速連写撮影では、撮像素子１０の面内で温度差が温度差Ａを超え、画質の低下が顕著な状態となってしまう。 If the heat generation of the image pickup device 10 and the AD conversion IC 21 further progresses after the temperatures of the one end portions 101 and 102 are temporarily equalized, the latent heat storage material whose phase change has been completed cannot store any more heat. Therefore, the one-end portion 101 stores more heat in response to the heat generated by the image sensor 10 itself and the AD conversion IC 21, and the temperature rises ahead of the one-end portion 102. Since the temperature of the one-end portion 102 rises more slowly than the temperature of the one-end portion 101, the heat storage of the one-end portion 102 is also delayed to saturate. After the heat storage of the one end portion 101 is completed, the temperature difference between the one end portions 101 and 102 is widened. The state in which there is a temperature difference between the end portions 101 and 102 continues until the temperature of the image pickup device 10 is saturated and reaches a constant temperature. When the allowable temperature difference in the plane of the image sensor 10 is the temperature difference A, the time during which the temperature difference between the one end portions 101 and 102 is within the allowable range for the image quality is the time from the shooting start time to the time Y. .. In the subsequent moving image shooting or high-speed continuous shooting, the temperature difference exceeds the temperature difference A in the plane of the image sensor 10, and the image quality is significantly deteriorated.

図４は、撮像基板２０に異なる相変化温度を持つ第１の潜熱蓄熱材５１および第２の潜熱蓄熱材５２を取り付けて動画撮影または高速連写撮影を行った場合の撮像素子１０の温度グラフである。横軸は時刻、縦軸は撮像素子１０の左右部の温度である。曲線６１は撮像素子１０のＡＤ変換ＩＣ２１の裏側に対応する片端部１０１の温度、曲線６２はその反対側の片端部１０２の温度を示している。前述したように、第１の潜熱蓄熱材５１の第１の相変化温度は、第２の潜熱蓄熱材５２の第２の相変化温度に比べて低く設定されている。 FIG. 4 is a temperature graph of the image pickup device 10 when the first latent heat storage material 51 and the second latent heat storage material 52 having different phase change temperatures are attached to the image pickup substrate 20 to perform moving image shooting or high-speed continuous shooting. Is. The horizontal axis is the time, and the vertical axis is the temperature of the left and right parts of the image sensor 10. The curve 61 shows the temperature of one end 101 corresponding to the back side of the AD conversion IC 21 of the image sensor 10, and the curve 62 shows the temperature of the one end 102 on the opposite side. As described above, the first phase change temperature of the first latent heat storage material 51 is set lower than the second phase change temperature of the second latent heat storage material 52.

動画撮影または高速連写撮影が開始されると、片端部１０１、１０２の温度はともに上昇するが、片端部１０１の温度は片端部１０２の温度に比べて高い。片端部１０１の温度は、第１の潜熱蓄熱材５１の第１の相変化温度付近で一定となり、推移する。その間、片端部１０２の温度は上昇し続け、片端部１０１の温度より高くなる。片端部１０２の温度は、第２の潜熱蓄熱材５２の第２の相変化温度付近で一定となり、推移する。第１の相変化温度付近で推移していた片端部１０１の温度は、第１の潜熱蓄熱材５１の相変化が終わると、再び上昇を始め、片端部１０２の温度より高くなる。その後、第２の相変化温度付近で推移していた片端部１０２の温度は、第２の潜熱蓄熱材５２の相変化が終わると、再び上昇を始める。 When the moving image shooting or the high-speed continuous shooting is started, the temperatures of the one-end portions 101 and 102 both rise, but the temperature of the one-end portion 101 is higher than the temperature of the one-end portion 102. The temperature of the one end portion 101 becomes constant and changes in the vicinity of the first phase change temperature of the first latent heat storage material 51. During that time, the temperature of the one end 102 continues to rise and becomes higher than the temperature of the one end 101. The temperature of the one end portion 102 becomes constant and changes in the vicinity of the second phase change temperature of the second latent heat storage material 52. The temperature of the one-ended portion 101, which has been changing near the first phase change temperature, starts to rise again after the phase change of the first latent heat storage material 51 is completed, and becomes higher than the temperature of the one-ended portion 102. After that, the temperature of the one end portion 102, which has been changing near the second phase change temperature, starts to rise again after the phase change of the second latent heat storage material 52 is completed.

以上説明したように、本実施例では、相変化温度の異なる第１の潜熱蓄熱材５１および第２の潜熱蓄熱材５２を用意し、相変化温度の低い第１の潜熱蓄熱材５１を相変化温度の高い第２の潜熱蓄熱材５２よりもＡＤ変換ＩＣ２１の近くに設けている。これにより、図４に示されるように、片端部１０１、１０２間の温度差が小さい時間帯を長く設けることができる。すなわち、撮像素子面内の温度勾配の発生を抑制可能である。撮像素子１０の面内の温度差許容値が温度差Ａである場合、片端部１０１、１０２間の温度差が画質に対して許容範囲となる時間は撮影開始時刻から時刻Ｚまでの時間である。撮影開始時刻から時刻Ｚまでの時間は、図２の撮影開始時刻から時刻Ｘまでの時間や図３の撮影開始時刻から時刻Ｙまでの時間よりも長い。そのため、動画撮影または高速連写撮影を図２や図３で説明した場合よりも長く続けることが可能である。 As described above, in the present embodiment, the first latent heat storage material 51 and the second latent heat storage material 52 having different phase change temperatures are prepared, and the first latent heat storage material 51 having a low phase change temperature is phase-changed. It is provided closer to the AD conversion IC 21 than the second latent heat storage material 52 having a high temperature. As a result, as shown in FIG. 4, it is possible to provide a long time zone in which the temperature difference between the one end portions 101 and 102 is small. That is, it is possible to suppress the generation of a temperature gradient in the surface of the image sensor. When the allowable temperature difference in the plane of the image sensor 10 is the temperature difference A, the time during which the temperature difference between the one end portions 101 and 102 is within the allowable range for the image quality is the time from the shooting start time to the time Z. .. The time from the shooting start time to the time Z is longer than the time from the shooting start time in FIG. 2 to the time X and the time from the shooting start time in FIG. 3 to the time Y. Therefore, it is possible to continue moving image shooting or high-speed continuous shooting for a longer time than in the case described with reference to FIGS. 2 and 3.

以下、動画撮影または高速連写撮影を繰り返し行う場合について説明する。カメラやビデオカメラを使用する際、動画撮影または高速連写撮影を行った後、間髪入れずに再度動画撮影または高速連写撮影を再開することがよくある。 Hereinafter, a case where moving image shooting or high-speed continuous shooting is repeatedly performed will be described. When using a camera or a video camera, it is often the case that after taking a moving image or high-speed continuous shooting, the moving image shooting or high-speed continuous shooting is resumed without a break.

図５は、撮像基板２０に潜熱蓄熱材を取り付けずに動画撮影または高速連写撮影を行い、撮像素子１０の温度が上昇した後、動画撮影または高速連写撮影を停止、その後すぐに再開した場合の撮像素子１０の温度グラフである。横軸は時刻、縦軸は撮像素子１０の左右部の温度である。曲線６１は撮像素子１０のＡＤ変換ＩＣ２１の裏側に対応する片端部１０１の温度、曲線６２はその反対側の片端部１０２の温度を示している。 In FIG. 5, video recording or high-speed continuous shooting was performed without attaching a latent heat storage material to the image pickup substrate 20, and after the temperature of the image sensor 10 rose, video recording or high-speed continuous shooting was stopped and then resumed immediately. It is a temperature graph of the image pickup device 10 in the case. The horizontal axis is the time, and the vertical axis is the temperature of the left and right parts of the image sensor 10. The curve 61 shows the temperature of one end 101 corresponding to the back side of the AD conversion IC 21 of the image sensor 10, and the curve 62 shows the temperature of the one end 102 on the opposite side.

時刻Ｖまで動画撮影または高速連写撮影が行われ、片端部１０１、１０２は高温となっている。時刻Ｖにおいて、動画撮影または高速連写撮影が停止され、画像の読み出しが終わると、撮像素子１０のフォトダイオードおよびＡＤ変換ＩＣ２１への電源供給が止まるため、撮像素子１０の温度が急激に下がる。時刻Ｗにおいて、動画撮影または高速連写撮影が再開されると、撮像素子１０の温度は再び上昇するが、片端部１０１の温度は、ＡＤ変換ＩＣ２１の温度上昇により、片端部１０２の温度に比べて大きく上昇する。結果として、時刻Ｗで動画撮影または高速連写撮影の再開後、片端部１０１、１０２間の温度差Ｂで示される撮像素子１０の面内の温度勾配が顕著となり、画質の低下を招いてしまう。 Movie shooting or high-speed continuous shooting is performed until time V, and the temperature of one end portions 101 and 102 is high. At time V, when the moving image shooting or the high-speed continuous shooting is stopped and the image reading is completed, the power supply to the photodiode and the AD conversion IC 21 of the image pickup device 10 is stopped, so that the temperature of the image pickup device 10 drops sharply. When the moving image shooting or the high-speed continuous shooting is resumed at the time W, the temperature of the image sensor 10 rises again, but the temperature of the one-ended portion 101 rises compared to the temperature of the one-ended portion 102 due to the temperature rise of the AD conversion IC 21. And rises significantly. As a result, after resuming moving image shooting or high-speed continuous shooting at time W, the in-plane temperature gradient of the image pickup device 10 indicated by the temperature difference B between the one end portions 101 and 102 becomes remarkable, which causes deterioration of image quality. ..

図６は、撮像基板２０に単一の相変化温度を持つ潜熱蓄熱材を取り付けて動画撮影または高速連写撮影を行い、撮像素子１０の温度が上昇した後、動画撮影または高速連写撮影を停止、その後すぐに再開した場合の撮像素子１０の温度グラフである。横軸は時刻、縦軸は撮像素子１０の左右部の温度である。曲線６１は撮像素子１０のＡＤ変換ＩＣ２１の裏側に対応する片端部１０１の温度、曲線６２はその反対側の片端部１０２の温度を示している。 In FIG. 6, a latent heat storage material having a single phase change temperature is attached to the image pickup substrate 20 to perform moving image shooting or high-speed continuous shooting, and after the temperature of the image sensor 10 rises, moving image shooting or high-speed continuous shooting is performed. 6 is a temperature graph of the image sensor 10 when the image sensor 10 is stopped and then restarted immediately. The horizontal axis is the time, and the vertical axis is the temperature of the left and right parts of the image sensor 10. The curve 61 shows the temperature of one end 101 corresponding to the back side of the AD conversion IC 21 of the image sensor 10, and the curve 62 shows the temperature of the one end 102 on the opposite side.

時刻Ｖにおいて、動画撮影または高速連写撮影が停止されると、撮像素子１０の温度低下が始まる。片端部１０１、１０２の温度はともに低下するが、温度低下の過程で潜熱蓄熱材の相変化が始まることで、潜熱蓄熱材の温度が相変化温度に保たれる。そのため、潜熱蓄熱材に対して撮像基板２０の反対側に配置されている撮像素子１０の温度低下も鈍化される。時刻Ｗにおいて、動画撮影または高速連写撮影が再開された場合の片端部１０１、１０２の温度はほぼ同温度である。その後、片端部１０１の温度は、片端部１０２の温度に比べて大きく上昇する。結果として、時刻Ｗで動画撮影または高速連写撮影の再開後、片端部１０１、１０２間の温度差Ｂで示される撮像素子１０の面内の温度勾配が顕著となり、画質の低下を招いてしまう。 When the moving image shooting or the high-speed continuous shooting is stopped at the time V, the temperature of the image sensor 10 starts to drop. Although the temperatures of the one end portions 101 and 102 both decrease, the temperature of the latent heat storage material is maintained at the phase change temperature by starting the phase change of the latent heat storage material in the process of the temperature decrease. Therefore, the temperature drop of the image pickup device 10 arranged on the opposite side of the image pickup substrate 20 with respect to the latent heat storage material is also slowed down. At time W, the temperatures of the end portions 101 and 102 when the moving image shooting or the high-speed continuous shooting is resumed are substantially the same temperature. After that, the temperature of the one-end portion 101 rises significantly compared to the temperature of the one-end portion 102. As a result, after resuming moving image shooting or high-speed continuous shooting at time W, the in-plane temperature gradient of the image pickup device 10 indicated by the temperature difference B between the one end portions 101 and 102 becomes remarkable, which causes deterioration of image quality. ..

図７は、撮像基板２０に異なる相変化温度を持つ第１の潜熱蓄熱材５１および第２の潜熱蓄熱材５２を取り付けて行われる動画撮影または高速連写撮影の停止後すぐに再開した場合の撮像素子１０の温度グラフである。横軸は時刻、縦軸は撮像素子１０の左右部の温度である。曲線６１は撮像素子１０のＡＤ変換ＩＣ２１の裏側に対応する片端部１０１の温度、曲線６２はその反対側の片端部１０２の温度を示している。前述したように、第１の潜熱蓄熱材５１の相変化温度は、第２の潜熱蓄熱材５２の相変化温度に比べて低く設定されている。 FIG. 7 shows a case where the first latent heat storage material 51 and the second latent heat storage material 52 having different phase change temperatures are attached to the image pickup substrate 20 and the moving image shooting or the high-speed continuous shooting is restarted immediately after the stop. It is a temperature graph of the image pickup element 10. The horizontal axis is the time, and the vertical axis is the temperature of the left and right parts of the image sensor 10. The curve 61 shows the temperature of one end 101 corresponding to the back side of the AD conversion IC 21 of the image sensor 10, and the curve 62 shows the temperature of the one end 102 on the opposite side. As described above, the phase change temperature of the first latent heat storage material 51 is set lower than the phase change temperature of the second latent heat storage material 52.

時刻Ｖにおいて、動画撮影または高速連写撮影が停止されると、撮像素子１０の温度低下が始まる。片端部１０１、１０２の温度はともに低下するが、温度低下の過程で、まず撮像基板２０を挟んで片端部１０２の裏側に配置されている第２の潜熱蓄熱材５２の温度が第２の相変化温度になり、第２の潜熱蓄熱材５２の相変化が始まる。第２の潜熱蓄熱材５２の相変化中、第２の潜熱蓄熱材５２の温度は一定であるだめ、片端部１０２の温度降下も鈍化される。その後、片端部１０１の裏側に配置されている第１の潜熱蓄熱材５１の温度が第１の相変化温度になり、第１の潜熱蓄熱材５１の相変化が始まる。第１の潜熱蓄熱材５１の相変化中、第１の潜熱蓄熱材５１の温度は一定であるだめ、片端部１０１の温度降下も鈍化される。第２の潜熱蓄熱材５２の第２の相変化温度は第１の潜熱蓄熱材５１の第１の相変化温度に比べて高く設定されているため、片端部１０２の温度降下は片端部１０１の温度降下に比べて小さい。時刻Ｗにおいて、動画撮影または高速連写撮影が再開されると、片端部１０１、１０２の温度はともに上昇するが、時刻Ｗでは片端部１０２の温度は片端部１０１の温度に比べて高い。片端部１０１の温度は、動画撮影または高速連写撮影が再開されて一定の時間経過後、ＡＤ変換ＩＣ２１の発熱により片端部１０２の温度よりも高くなる。結果として、時刻Ｗで動画撮影または高速連写撮影の再開後、片端部１０１、１０２間の温度差を小さく維持でき、画質の低下を抑制することが可能である。 When the moving image shooting or the high-speed continuous shooting is stopped at the time V, the temperature of the image sensor 10 starts to drop. The temperatures of the one-end portions 101 and 102 both decrease, but in the process of the temperature decrease, the temperature of the second latent heat storage material 52 arranged on the back side of the one-end portion 102 with the image pickup substrate 20 sandwiched first becomes the second phase. The temperature changes, and the phase change of the second latent heat storage material 52 begins. During the phase change of the second latent heat storage material 52, the temperature of the second latent heat storage material 52 is not constant, and the temperature drop of the one end 102 is also slowed down. After that, the temperature of the first latent heat storage material 51 arranged on the back side of the one end portion 101 becomes the first phase change temperature, and the phase change of the first latent heat storage material 51 starts. During the phase change of the first latent heat storage material 51, the temperature of the first latent heat storage material 51 is not constant, and the temperature drop of the one end portion 101 is also slowed down. Since the second phase change temperature of the second latent heat storage material 52 is set higher than the first phase change temperature of the first latent heat storage material 51, the temperature drop of one end 102 is set higher than that of the one end 101. Small compared to temperature drop. When the moving image shooting or the high-speed continuous shooting is resumed at the time W, the temperatures of the one-end portions 101 and 102 both rise, but at the time W, the temperature of the one-end portion 102 is higher than the temperature of the one-end portion 101. The temperature of the one-end portion 101 becomes higher than the temperature of the one-end portion 102 due to the heat generated by the AD conversion IC 21 after a certain period of time has elapsed after the moving image shooting or the high-speed continuous shooting shooting is resumed. As a result, after resuming the moving image shooting or the high-speed continuous shooting at the time W, the temperature difference between the one end portions 101 and 102 can be kept small, and the deterioration of the image quality can be suppressed.

以上説明したように、本実施例では、相変化温度の異なる第１の潜熱蓄熱材５１および第２の潜熱蓄熱材５２を用意し、相変化温度の低い第１の潜熱蓄熱材５１を相変化温度の高い第２の潜熱蓄熱材５２よりもＡＤ変換ＩＣ２１の近くに設けている。これにより、図７に示されるように、片端部１０１、１０２間の温度差が小さい時間帯を長く設けることができる。すなわち、撮像素子面内の温度勾配の発生を抑制可能である。そのため、短い時間間隔で動画撮影や高速連写撮影を繰り返しても暗電流差による輝度ムラ、色ムラおよび画素欠陥ムラといった画質の低下を抑制することが可能である。 As described above, in the present embodiment, the first latent heat storage material 51 and the second latent heat storage material 52 having different phase change temperatures are prepared, and the first latent heat storage material 51 having a low phase change temperature is phase-changed. It is provided closer to the AD conversion IC 21 than the second latent heat storage material 52 having a high temperature. As a result, as shown in FIG. 7, it is possible to provide a long time zone in which the temperature difference between the one end portions 101 and 102 is small. That is, it is possible to suppress the generation of a temperature gradient in the surface of the image sensor. Therefore, it is possible to suppress deterioration of image quality such as luminance unevenness, color unevenness, and pixel defect unevenness due to a dark current difference even if moving image shooting and high-speed continuous shooting are repeated at short time intervals.

図８は、撮像装置（電子機器）２の背面カバー部の分解斜視図である。背面カバー部は、背面カバーユニット７０、メイン基板８０、本体シャーシ９０、第１の潜熱蓄熱材１１１および第２の潜熱蓄熱材１１２を有する。 FIG. 8 is an exploded perspective view of the back cover portion of the image pickup apparatus (electronic device) 2. The back cover unit includes a back cover unit 70, a main board 80, a main body chassis 90, a first latent heat storage material 111, and a second latent heat storage material 112.

背面カバーユニット７０は、背面カバー７１、液晶パネル（表示部材）７２、液晶パネル保持部材７３、フレキシブル基板７４および背面ボタン７５を有する。液晶パネル７２は、フレキシブル基板７４に接続され、さらにメイン基板８０のコネクタ部８２に接続されている。液晶パネル７２は、メイン基板８０に形成される画処理ＩＣ（発熱部材）８１に対向するように配置されている。液晶パネル７２は、撮像装置２で撮影した画像をプレビューするほか、ライブビュー表示や設定画面などの表示を行う。液晶パネル保持部材７３は、液晶パネル７２を保持し、ビス７１１、７１２、７１３、７１４により背面カバー７１に締結されている。 The back cover unit 70 includes a back cover 71, a liquid crystal panel (display member) 72, a liquid crystal panel holding member 73, a flexible substrate 74, and a back button 75. The liquid crystal panel 72 is connected to the flexible substrate 74 and further connected to the connector portion 82 of the main substrate 80. The liquid crystal panel 72 is arranged so as to face the image processing IC (heat generating member) 81 formed on the main substrate 80. The liquid crystal panel 72 previews the image taken by the image pickup device 2, and also displays a live view display, a setting screen, and the like. The liquid crystal panel holding member 73 holds the liquid crystal panel 72 and is fastened to the back cover 71 by screws 711, 712, 713, and 714.

メイン基板８０には、撮像装置２の動作に関連する様々な回路等の部材が実装されている。このうち、動画撮影または高速連写撮影の際に最も高温となるのは画処理ＩＣ８１である。画処理ＩＣ８１には、不図示のＡＤ変換ＩＣからのデジタル信号が入力される。画処理ＩＣ８１は、画像データを生成した後、液晶パネル７２にプレビュー表示したり、不図示のＳＤカードなどの記憶媒体に保存したりする。また、画処理ＩＣ８１は、ＵＳＢやＨＤＭＩ(登録商標）などの接続ケーブルや、無線通信信号に対する処理を行う。 Various circuits and other members related to the operation of the image pickup apparatus 2 are mounted on the main board 80. Of these, the image processing IC 81 has the highest temperature during moving image shooting or high-speed continuous shooting. A digital signal from an AD conversion IC (not shown) is input to the image processing IC 81. After the image data is generated, the image processing IC 81 previews and displays the image data on the liquid crystal panel 72, or stores the image data in a storage medium such as an SD card (not shown). Further, the image processing IC 81 processes a connection cable such as USB or HDMI (registered trademark) and a wireless communication signal.

第１の潜熱蓄熱材１１１および第２の潜熱蓄熱材１１２は、メイン基板８０側に粘着面を持っており、メイン基板８０に取り付けられる。第１の潜熱蓄熱材１１１および第２の潜熱蓄熱材１１２では、上述のように、内部の相変化材の配合量を変えることで、相変化温度を任意に設定可能である。本実施例では、第１の潜熱蓄熱材１１１は、相変化することで第１の相変化温度を所定時間だけ維持可能である。また、第２の潜熱蓄熱材１１２は、相変化することで第２の相変化温度を所定時間だけ維持可能である。第１の相変化温度は、第２の相変化温度に比べて低く設定されている。 The first latent heat storage material 111 and the second latent heat storage material 112 have an adhesive surface on the main substrate 80 side and are attached to the main substrate 80. In the first latent heat storage material 111 and the second latent heat storage material 112, the phase change temperature can be arbitrarily set by changing the blending amount of the internal phase change material as described above. In this embodiment, the first latent heat storage material 111 can maintain the first phase change temperature for a predetermined time by changing the phase. Further, the second latent heat storage material 112 can maintain the second phase change temperature for a predetermined time by changing the phase. The first phase change temperature is set lower than the second phase change temperature.

動画撮影または高速連写撮影を行うことで、画処理ＩＣ８１は高温になる。背面カバーユニット７０とメイン基板８０とのクリアランスは撮像装置２の小型化のために小さく設定されているため、画処理ＩＣ８１の発熱は液晶パネル７２にも及ぶ。仮にメイン基板８０に潜熱蓄熱材を取り付けない場合、図２の場合と同様に、液晶パネル７２の画処理ＩＣ８１に対応する片端部７２１は、画処理ＩＣ８１の発熱により、片端部７２１の反対側の片端部７２２に比べて温度上昇が大きくなる。その結果、液晶パネル７２に温度勾配が発生し、透過率や階調特性のずれが生じるため、表示画質の低下が生じる。 The image processing IC 81 becomes hot due to moving image shooting or high-speed continuous shooting. Since the clearance between the back cover unit 70 and the main board 80 is set small for the miniaturization of the image pickup apparatus 2, the heat generated by the image processing IC 81 extends to the liquid crystal panel 72. If the latent heat storage material is not attached to the main substrate 80, the one-ended portion 721 corresponding to the image processing IC 81 of the liquid crystal panel 72 is on the opposite side of the one-ended portion 721 due to the heat generated by the image processing IC 81, as in the case of FIG. The temperature rise is larger than that at one end 722. As a result, a temperature gradient is generated in the liquid crystal panel 72, and the transmittance and the gradation characteristics are deviated, so that the display image quality is deteriorated.

本実施例では、メイン基板８０に相変化温度の異なる、第１の潜熱蓄熱材１１１および第２の潜熱蓄熱材１１２を取り付けて動画撮影または高速連写撮影を行う。この場合の温度変化は、図４の場合と同様となる。まず、画処理ＩＣ８１が高温となるが、第１の潜熱蓄熱材１１１の相変化により、片端部７２１の温度は第１の潜熱蓄熱材１１１の第１の相変化温度付近で一定に保たれる。その後、遅れて温度上昇した片端部７２２の温度も、第２の潜熱蓄熱材１１２の相変化により、第２の潜熱蓄熱材１１２の第２の相変化温度付近で一定に保たれる。このとき、片端部７２２の温度は、片端部７２１の温度よりも高い。その後、相変化が終わった第１の潜熱蓄熱材１１１の温度上昇、第２の潜熱蓄熱材１１２の温度上昇、と続き、片端部７２１、７２２もその順で温度上昇する。結果的に、片端部７２１、７２２間の温度差が小さい時間を長く継続できることになり、動画撮影または高速連写撮影を続けても、表示画質の低下を抑制することが可能である。 In this embodiment, the first latent heat storage material 111 and the second latent heat storage material 112 having different phase change temperatures are attached to the main substrate 80 to perform moving image shooting or high-speed continuous shooting. The temperature change in this case is the same as in the case of FIG. First, the image processing IC 81 becomes hot, but the temperature of the one end portion 721 is kept constant near the first phase change temperature of the first latent heat storage material 111 due to the phase change of the first latent heat storage material 111. .. After that, the temperature of the one-end portion 722 whose temperature has risen later is also kept constant near the second phase change temperature of the second latent heat storage material 112 due to the phase change of the second latent heat storage material 112. At this time, the temperature of the one-ended portion 722 is higher than the temperature of the one-ended portion 721. After that, the temperature of the first latent heat storage material 111 that has finished the phase change rises, the temperature of the second latent heat storage material 112 rises, and so on, and the temperatures of the one-ended portions 721 and 722 also rise in that order. As a result, the time when the temperature difference between the one end portions 721 and 722 is small can be continued for a long time, and it is possible to suppress the deterioration of the display image quality even if the moving image shooting or the high-speed continuous shooting is continued.

以上説明したように、本実施例では、相変化温度の異なる第１の潜熱蓄熱材１１１および第２の潜熱蓄熱材１１２を用意し、相変化温度の低い第１の潜熱蓄熱材１１１を相変化温度の高い第２の潜熱蓄熱材１１２よりも画処理ＩＣ８１の近くに設けている。これにより、パネル面内の温度勾配の発生を抑制可能である。 As described above, in the present embodiment, the first latent heat storage material 111 and the second latent heat storage material 112 having different phase change temperatures are prepared, and the first latent heat storage material 111 having a low phase change temperature is phase-changed. It is provided closer to the image processing IC 81 than the second latent heat storage material 112 having a high temperature. This makes it possible to suppress the generation of a temperature gradient in the panel surface.

以上、本発明の好ましい実施形態について説明したが、本発明はこれらの実施形態に限定されず、その要旨の範囲内で種々の変形及び変更が可能である。 Although the preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and various modifications and modifications can be made within the scope of the gist thereof.

１撮像素子ユニット（電子機器）
２撮像装置（電子機器）
２０撮像基板（デバイス）
２１ＡＤ変換ＩＣ（発熱部材）
５１第１の潜熱蓄熱材
５２第２の潜熱蓄熱材
８０メイン基板（デバイス）
８１画処理ＩＣ（発熱部材）
１１１第１の潜熱蓄熱材
１１２第２の潜熱蓄熱材
1 Image sensor unit (electronic device)
2 Imaging device (electronic device)
20 Imaging board (device)
21 AD conversion IC (heat generating member)
51 First latent heat storage material 52 Second latent heat storage material 80 Main board (device)
81 Image processing IC (heat generation member)
111 First latent heat storage material 112 Second latent heat storage material

Claims

Devices for processing electrical signals and
A heat-generating member formed on the device and whose temperature rises by driving the device,
A first latent heat storage material that is attached to the device and can maintain the first phase change temperature for a predetermined time by changing the phase.
A second latent heat storage material attached to the device and capable of maintaining a second phase change temperature higher than the first phase change temperature for a predetermined time by changing the phase.
It has an image pickup element that is attached to a surface of the device opposite to the surface on which the heat generation member is formed and that photoelectrically converts a subject image imaged by an image pickup optical system .
The first latent heat storage material is an electronic device provided closer to the heat generating member than the second latent heat storage material.

Devices for processing electrical signals and
A heat-generating member formed on the device and whose temperature rises by driving the device,
A first latent heat storage material that is attached to the device and can maintain the first phase change temperature for a predetermined time by changing the phase.
A second latent heat storage material attached to the device and capable of maintaining a second phase change temperature higher than the first phase change temperature for a predetermined time by undergoing a phase change.
It has a display member arranged so as to face the heat generating member, and has.
The first latent heat storage material is an electronic device provided closer to the heat generating member than the second latent heat storage material.

The invention according to claim 1 or 2 , wherein the phase change temperature of the first latent heat storage material and the second latent heat storage material can be set by the ratio of a plurality of phase change materials to be blended inside. Electronics.

The electronic device according to claim 1 , further comprising a display member arranged so as to face the heat generating member.