JP7092335B2 - Igniter and vehicle equipped with the igniter - Google Patents

Description

The present disclosure relates to an igniter and a vehicle equipped with the igniter.

Conventionally, an igniter for controlling an ignition coil connected to a spark plug of an engine is known. Patent Document 1 discloses an example of a conventional igniter. The igniter disclosed in the same document controls the ignition coil according to the ignition instruction signal IGT (Ignition Timing) input from the ECU (Engine Control Unit). Further, the igniter generates an ignition confirmation signal IGF (Ignition Flag) and outputs it to the ECU.

FIG. 10 is a circuit diagram showing a conventional igniter 100. The igniter 100 receives an ignition instruction signal IGT from the ECU 2 and controls the ignition coil according to the ignition instruction signal IGT. The drive unit 133 of the igniter 100 controls the on / off of the switch element 11 by controlling the gate voltage of the switch element 11 (for example, an IGBT (Insulated Gate Bipolar Transistor)) in response to the ignition instruction signal IGT. When the switch element 11 is switched from on to off, a high voltage is generated in the secondary coil of the ignition coil and applied to the spark plug.

Further, the igniter 100 includes an ignition confirmation unit 134 that detects the current Ic flowing through the switch element 11 and confirms ignition. The ignition confirmation unit 134 generates an ignition confirmation signal IGF by comparing the voltage between terminals (detection voltage Vcs) of the current detection resistor 12 with the reference voltages Vref1 and Vref2 (> Vref1), and outputs the ignition confirmation signal IGF to the ECU 2. ..

The igniter 100 is housed in a lead frame package and is composed of, for example, a 6-pin SiP (Single In-Line Package). FIG. 11 is a plan view showing an example of the layout of the internal configuration of the igniter 100.

The switch element 11 is mounted on the lead 404, and the control circuit 13 is mounted on the lead 402. The lead 402 is grounded. The pad 601 which is the emitter electrode of the switch element 11 is connected to the lead 402 by the bonding wire 510. Further, the pad 601 is connected to the sense input pad 206 of the control circuit 13 by the bonding wire 506. The igniter 100 uses the resistance component of the bonding wire 510 as the current detection resistor 12. The voltage on the high potential side of the current detection resistor 12 is input to the sense input pad 206 by the bonding wire 506. Therefore, the bonding portion between the bonding wire 510 and the pad 601 and the pad 601 between the bonding point of the bonding wire 510 and the bonding point of the bonding wire 506 are also included in the current detection resistor 12.

By repeating heat generation and cooling of the switch element 11 by the power cycle, the sealing resin around the bonding wire repeatedly expands and contracts. Due to this stress, cracks may occur in the joint portion between the bonding wire 510 and the pad 601. In this case, the resistance value of the joint portion becomes high, and the resistance value of the current detection resistor 12 becomes high. As a result, the detection voltage Vcs becomes high, so that the ignition confirmation unit 134 malfunctions. The same applies when the pad 601 deteriorates due to the expansion and contraction of the sealing resin, and the resistance value of the pad 601 between the bonding point of the bonding wire 510 and the bonding point of the bonding wire 506 changes.

Japanese Unexamined Patent Publication No. 2008-2392

The present disclosure is conceived under the above circumstances, and provides an igniter capable of suppressing a malfunction of the ignition confirmation unit even when the bonding portion between the bonding wire and the pad or the pad itself deteriorates. The task is to do.

The igniter provided by the present disclosure is a switch element having an input electrode, an output electrode and a control electrode, and a first lead in which the switch element is mounted in contact with the input electrode and is connected to a primary coil of an ignition coil. A second lead to be grounded, a third lead isolated from the first lead and the second lead, a first bonding wire connecting the output electrode and the third lead, and the third lead. The switch element is driven based on the second bonding wire connecting the second lead and the ignition instruction signal input from the engine control device, and is output to the engine control device based on the voltage of the third lead. It is characterized by comprising a control IC for generating an ignition confirmation signal.

According to the igniter of the present disclosure, the output electrode and the third lead are connected by the first bonding wire, the third lead and the second lead are connected by the second bonding wire, and ignition is performed based on the voltage of the third lead. A confirmation signal is generated. That is, the second bonding wire is used as a current detection resistor. The third lead and the second bonding wire are less susceptible to power cycles. Therefore, even if the joint portion between the first bonding wire and the output electrode or the output electrode itself deteriorates, the malfunction of the ignition confirmation unit can be suppressed.

Other features and advantages of the present disclosure will be more apparent by the detailed description given below with reference to the accompanying drawings.

It is a block diagram which shows the whole structure of the vehicle which comprises the igniter which concerns on 1st Embodiment of this disclosure. It is a circuit diagram which shows the detail of the internal structure of the ignition confirmation part of the igniter of FIG. It is a circuit diagram which shows the structural example of a comparator. It is a top view which shows an example of the layout of the functional IC of the control circuit of the igniter of FIG. It is a partially enlarged plan view which shows the detail of a part of the layout of FIG. It is a top view which shows an example of the layout of the internal structure of the igniter of FIG. It is a top view which shows an example of the manufacturing method of the igniter of FIG. It is a top view which shows an example of the manufacturing method of the igniter of FIG. It is a top view which shows an example of the layout of the internal structure of the igniter which concerns on 1st Embodiment of this disclosure. It is a circuit diagram which shows the conventional igniter. It is a top view which shows an example of the layout of the internal structure of a conventional igniter.

Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings.

<First Embodiment>
1 to 6 show an example of an igniter according to the present disclosure. FIG. 1 is a block diagram showing an overall configuration of a vehicle A including the igniter 1 of the present embodiment. The vehicle A includes an igniter 1, an ECU 2, a spark plug 3, an ignition coil 4, and a battery 5. The vehicle A also has other configurations, but is omitted in FIG. 1.

The ECU 2 is an electronic control unit for controlling the operation of the engine, and is realized by a microcomputer provided with a CPU and a memory. The ECU 2 generates an ignition instruction signal IGT that indicates the ignition timing of the spark plug 3 as a periodic signal synchronized with the rotation of the engine. The ECU 2 outputs an ignition instruction signal IGT to the igniter 1. The ECU 2 corresponds to the "engine control device" of the present invention.

The ignition coil 4 generates a high voltage for discharging the spark plug 3. The ignition coil 4 includes a primary coil 41 and a secondary coil 42. One terminal of the primary coil 41 is connected to the battery 5, and the other terminal is connected to the output terminal OUT of the igniter 1. One terminal of the secondary coil 42 is connected to the battery 5, and the other terminal is connected to the spark plug 3.

The spark plug 3 is provided for each cylinder of the engine (not shown), and explodes the air-fuel mixture in the engine by discharging.

The igniter 1 controls the discharge of the spark plug 3 based on the ignition instruction signal IGT input from the ECU 2. Specifically, the igniter 1 controls the current Ic flowing through the primary coil 41 of the ignition coil 4 based on the ignition instruction signal IGT. The igniter 1 passes a current Ic through the primary coil 41 while the ignition instruction signal IGT is at a high level. Then, the igniter 1 cuts off the current Ic flowing through the primary coil 41 at the timing when the ignition instruction signal IGT switches from the high level to the low level. As a result, a counter electromotive force of several hundred volts is generated in the primary coil 41. At this time, a high voltage of, for example, several tens of kV is generated in the secondary coil 42 by multiplying the voltage on the primary side by the turns ratio. The spark plug 3 is discharged by the high voltage applied from the secondary coil 42.

The igniter 1 includes a power supply terminal VDD, a ground terminal GND, an input terminal IN, an output terminal OUT, and a feedback terminal FB. The power supply terminal VDD is connected to the battery 5 to supply a power supply voltage. The ground terminal GND is grounded. The input terminal IN is connected to the ECU 2 via a harness (not shown), and an ignition instruction signal IGT is input from the ECU 2. The output terminal OUT is connected to the primary coil 41 of the ignition coil 4. The feedback terminal FB is connected to the ECU 2 via a harness and outputs an ignition confirmation signal IGF to the ECU 2. Further, the igniter 1 includes a switch element 11, a current detection resistor 12, and a control circuit 13. The igniter 1 is provided as a semiconductor integrated circuit device in which a switch element 11, a current detection resistor 12, and a control circuit 13 are packaged.

The switch element 11 is, for example, an IGBT, and by switching on and off by the control circuit 13, it switches between conduction and non-conduction between the output terminal OUT and the ground terminal GND. The collector terminal of the switch element 11 is connected to the primary coil 41 of the ignition coil 4 via the output terminal OUT. The emitter terminal of the switch element 11 is grounded via the ground terminal GND. The gate terminal of the switch element 11 is connected to the control circuit 13. The switch element 11 is turned on and off according to the gate drive signal input from the control circuit 13 to the gate terminal. The switch element 11 is not limited to the IGBT, and may be another switch element such as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

The current detection resistor 12 is a resistor connected between the emitter terminal of the switch element 11 and the ground terminal GND. In FIG. 1, the resistance connected in series to the ground terminal GND side of the resistor 12 indicates the parasitic resistance of the lead 402 (lead having the ground terminal GND) described later. When the switch element 11 is in the ON state, the current Ic flowing through the primary coil 41 of the ignition coil 4 flows through the current detection resistor 12. Therefore, a detection voltage Vcs proportional to the current Ic is generated between the terminals of the current detection resistor 12. The resistance value of the current detection resistor 12 is, for example, about several mΩ to several tens of mΩ. Therefore, even if the current Ic flowing through the current detection resistor 12 is several A to several tenth A, the detection voltage Vcs can be suppressed to several mV to several hundred mV. In the present embodiment, the current detection resistor 12 is a resistance component of the bonding wire arranged in the current path between the emitter terminal of the switch element 11 and the ground terminal GND.

The control circuit 13 controls the igniter 1 and is a functional IC integrally integrated on the semiconductor substrate. The control circuit 13 controls the switch element 11 based on the ignition instruction signal IGT input from the ECU 2. Further, the control circuit 13 monitors the current Ic flowing through the primary coil 41, generates an ignition confirmation signal IGF, and outputs the ignition confirmation signal IGF to the ECU 2. Further, the control circuit 13 has a current limiting function that limits the current Ic flowing through the switch element 11 to a predetermined upper limit or less, and a predetermined standby period (for example, about 100 ms) with the ignition instruction signal IGT set to the logic level at the time of ON. ) Has elapsed, it also has a timer protection function that forcibly turns off the switch element 11. The control circuit 13 corresponds to the "control IC" of the present invention.

The control circuit 13 includes a power supply pad 201, a ground pad 202, an input pad 203, a gate output pad 204, a feedback output pad 205, a sense input pad 206, and a sense ground pad 207. The power pad 201 is connected to the power terminal VDD, and the ground pad 202 is connected to the ground terminal GND. The input pad 203 is connected to the input terminal IN, the gate output pad 204 is connected to the gate terminal of the switch element 11, and the feedback output pad 205 is connected to the feedback terminal FB. The sense input pad 206 is connected to the terminal on the high potential side of the current detection resistor 12. The sense ground pad 207 is connected to the terminal on the low potential side of the current detection resistor 12. Further, the control circuit 13 includes a drive unit 133 and an ignition confirmation unit 134.

The drive unit 133 controls the switch element 11. The drive unit 133 controls the on / off of the switch element 11 by controlling the voltage of the gate terminal of the switch element 11 according to the ignition instruction signal IGT input from the ECU 2. The drive unit 133 includes a high-frequency filter (not shown), a comparator, a delay circuit, and a driver. The high frequency filter removes high frequency noise from the ignition instruction signal IGT and outputs it to the comparator. The comparator compares the ignition instruction signal IGT from which high frequency noise has been removed with the threshold value to determine the level (high level or low level). The comparator outputs the determination result as a determination signal to the delay circuit. The delay circuit gives a predetermined delay to the determination signal and outputs it to the driver. The driver generates and outputs a gate drive signal at a level capable of driving the switch element 11 based on the determination signal. The drive unit 133 turns on the switch element 11 for a period when the ignition instruction signal IGT is at a high level, and turns off the switch element 11 for a period when the ignition instruction signal IGT is at a low level. When the ignition instruction signal IGT is switched from high level to low level, the switch element 11 is switched from on to off. As a result, a high voltage is generated in the secondary coil 42 of the ignition coil 4, and the high voltage is applied to the spark plug 3.

The ignition confirmation unit 134 generates an ignition confirmation signal IGF based on the current Ic flowing through the primary coil 41 and outputs the ignition confirmation signal IGF to the ECU 2. The ignition confirmation unit 134 generates an ignition confirmation signal IGF by comparing the current Ic with the reference currents Iref1 and Iref2 (> Iref1). Actually, the ignition confirmation unit 134 sets the inter-terminal voltage (detection voltage Vcs) of the current detection resistor 12 to the reference voltage Vref1 corresponding to the reference current Iref1 and the reference voltage Vref2 (> Vref1) corresponding to the reference current Iref2. ) To generate an ignition confirmation signal IGF. The ignition confirmation unit 134 becomes the first level (for example, low level) when the detected voltage Vcs is a voltage between the reference voltage Vref1 and the reference voltage Vref2 (Vref1 <Vc <Vref2), and in other cases (Vc). A signal to be the second level (for example, high level) is generated in <Vref1, Vref2 <Vc), and is output to the ECU 2 as an ignition confirmation signal IGF. The first level may be a high level and the second level may be a low level.

FIG. 2 is a circuit diagram showing details of the internal configuration of the ignition confirmation unit 134. The ignition confirmation unit 134 includes a first comparison unit 110, a second comparison unit 120, a third comparison unit 130, a fourth comparison unit 140, a logical operation unit 101, and an output transistor 102.

The first comparison unit 110 compares the detected voltage Vcs with the reference voltage Vref1. The first comparison unit 110 includes a comparator 111, a resistor R11, a capacitor C11, and resistors R12 and R13. The resistance R11 is a resistance for setting the reference voltage Vref1. The comparator 111 compares the detected voltage Vcs with the reference voltage Vref1. The non-inverting input terminal of the comparator 111 is connected to the sense input pad 206. The inverting input terminal of the comparator 111 is connected to the sense ground pad 207 via the resistor R11. The output terminal of the comparator 111 is connected to the logical operation unit 101, and outputs a comparison result between the detected voltage Vcs and the reference voltage Vref1. The comparator 111 outputs a comparison signal S11 which becomes a high level when the detected voltage Vcs is larger than the reference voltage Vref1 (Vcs> Vref1) and becomes a low level when the detected voltage Vcs is smaller than the reference voltage Vref1 (Vcs <Vref1). .. The specific circuit configuration of the comparator 111 is not limited.

FIG. 3 is a circuit diagram showing a configuration example of the comparator 111. The comparator 111 includes a transistor TR1, a transistor TR2, a transistor TR3, a current source CS1, a current source CS2, a current source CS3, a resistor R1, and a resistor R2.

The transistor TR1 and the transistor TR2 are NPN type bipolar transistors. The collector terminal of the transistor TR1 is connected to the current source CS1 via the resistor R1, and the collector terminal of the transistor TR2 is connected to the current source CS2 via the resistor R2. The base terminal of the transistor TR1 and the base terminal of the transistor TR2 are commonly connected and connected to the collector terminal of the transistor TR1. The emitter terminal of the transistor TR1 is connected to the inverting input terminal (-). The emitter terminal of the transistor TR2 is connected to the non-inverting input terminal (+). The transistor TR1 and the transistor TR2 form a differential input unit of the comparator 111, and the emitter voltage of the transistor TR1 and the emitter voltage of the transistor TR2 are compared with each other, depending on the magnitude relationship between the reference voltage Vref1 and the detected voltage Vcs. The collector voltage Vx of the transistor TR2 changes.

The current source CS3 and the transistor TR3 form an emitter follower type output stage. The collector terminal of the transistor TR3 is connected to the current source CS3, the base terminal is connected to the collector terminal of the transistor TR2, and the emitter terminal is grounded. The transistor TR3 outputs a comparison signal S11 from the collector terminal according to the collector voltage Vx of the transistor TR2. The specific circuit of the comparator 111 is not limited.

The capacitor C11 is connected between the non-inverting input terminal and the inverting input terminal of the comparator 111. The capacitance of the capacitor C11 is, for example, about 0.1 to 100 pF. In the present embodiment, the capacitor C11 is formed by connecting two capacitors of about 0.05 to 50 pF in parallel. The capacitor C11 may be a capacitor in which three or more capacitors are connected in parallel, or may be one capacitor. The capacitor C11 smoothes the voltage between the terminals so that the voltage input to the non-inverting input terminal (detection voltage Vcs on which noise is superimposed) and the voltage input to the inverting input terminal (reference voltage on which noise is superimposed). The phase difference with Vref1) is suppressed.

One terminal of the resistor R12 is connected to the non-inverting input terminal of the comparator 111, and the other terminal is connected to the sense input pad 206. One terminal of the resistor R13 is connected to the resistor R11, and the other terminal is connected to the sense ground pad 207. The resistor R13 may have one terminal connected to the inverting input terminal of the comparator 111 and the other terminal connected to the resistor R11. The resistance value of the resistor R12 and the resistance value of R13 are about the same, for example, about 100Ω to 10kΩ. The resistor R12 and the capacitor C11 form an RC filter that removes high frequencies input to the non-inverting input terminal of the comparator 111. Further, the resistor R13 and the capacitor C11 form an RC filter that removes high frequencies input to the inverting input terminal of the comparator 111. The capacitors C11 and the resistors R12 and R13 remove high frequency noise input to each input terminal of the comparator 111. The cutoff frequency of the RC filter composed of the capacitors C11 and the resistors R12 and R13 is higher than the frequency component (tens to hundreds of Hz) of the waveform of the detection voltage Vcs during normal operation, and the frequency of noise to be removed (radio). Reception failure BCI is set lower than 1MHz). Therefore, the cutoff frequency is preferably about several hundred Hz to several tens of kHz. Since the resistance value of the resistor R12 and the resistance value of R13 are about the same, the voltage drop due to the resistor R12 and the voltage drop due to the resistor R13 are about the same. Therefore, the detected voltage Vcs and the reference voltage Vref1 can be compared by comparing the voltage input to the non-inverting input terminal with the voltage input to the inverting input terminal.

The second comparison unit 120 compares the detected voltage Vcs with the reference voltage Vref2. The second comparison unit 120 includes a comparator 121, a resistor R21, a capacitor C21, and resistors R22 and R23. The resistance R21 is a resistance for setting the reference voltage Vref2. The comparator 121 compares the detected voltage Vcs with the reference voltage Vref2. The non-inverting input terminal of the comparator 121 is connected to the sense input pad 206. The inverting input terminal of the comparator 121 is connected to the sense ground pad 207 via the resistor R21. The output terminal of the comparator 121 is connected to the logical operation unit 101, and outputs a comparison result between the detected voltage Vcs and the reference voltage Vref2. The comparator 121 outputs a comparison signal S12 which becomes a high level when the detected voltage Vcs is larger than the reference voltage Vref1 (Vcs> Vref2) and becomes a low level when the detected voltage Vcs is smaller than the reference voltage Vref2 (Vcs <Vref2). .. The specific circuit configuration of the comparator 121 is not limited.

The capacitor C21 is connected between the non-inverting input terminal and the inverting input terminal of the comparator 121. The capacitor C21 is the same capacitor as the capacitor C11 of the first comparison unit 110, and is connected for the same purpose. One terminal of the resistor R22 is connected to the non-inverting input terminal of the comparator 121, and the other terminal is connected to the sense input pad 206. One terminal of the resistor R23 is connected to the resistor R21, and the other terminal is connected to the sense ground pad 207. The resistor R23 may have one terminal connected to the inverting input terminal of the comparator 121 and the other terminal connected to the resistor R21. The resistance value of the resistor R22 and the resistance value of the resistor R23 are about the same. The resistances R22 and R23 are the same resistances as the resistances R12 and R13 of the first comparison unit 110, respectively, and are connected for the same purpose.

The logical operation unit 101 performs a logical operation based on the comparison signal S11 input from the first comparison unit 110 and the comparison signal S12 input from the second comparison unit 120, and the operation result signal S15 showing the operation result. Is output. The logical operation unit 101 calculates the logical product of the comparison signal S11 and the inverted signal of the comparison signal S12. When both the comparison signal S11 and the comparison signal S12 are at the low level (Vcs <Vref1), the logical operation unit 101 sets the operation result signal S15 at the low level. Further, when the comparison signal S11 is at a high level and the comparison signal S12 is at a low level (Vref1 <Vcs <Vref2), the logical operation unit 101 sets the operation result signal S15 to a high level. Further, when the comparison signal S11 and the comparison signal S12 are both at a high level (Vcs> Vref2), the logical operation unit 101 sets the operation result signal S15 to a low level. That is, the calculation result signal S15 becomes high level only during the period when the comparison signal S11 is high level and the comparison signal S12 is low level (Vref1 <Vcs <Vref2). The logical operation unit 101 is not limited, and may be designed according to the combination of high level and low level of the comparison signals S11 and S12 and the operation result signal S15.

The output transistor 102 is an open-drain (open collector) type transistor, and is, for example, an N-channel MOSFET in this embodiment. The drain terminal of the output transistor 102 is connected to the feedback terminal FB via the feedback output pad 205. The source terminal of the output transistor 102 is grounded. The operation result signal S15 is input from the logic operation unit 101 to the gate terminal of the output transistor 102. When the calculation result signal S15 is high level, the ignition confirmation signal IGF becomes low level, and when the calculation result signal S15 is low level, the ignition confirmation signal IGF becomes high level. The feedback terminal FB is connected to the ECU 2 via a harness. The ECU 2 detects whether or not the igniter 1 is operating normally based on the ignition confirmation signal IGF input from the feedback terminal FB.

The third comparison unit 130 detects that the current Ic has reached the first upper limit current Iref3 by comparing the current Ic with the first upper limit current Iref3 (> Iref2). Actually, the third comparison unit 130 compares the detected voltage Vcs with the reference voltage Vref3 (> Vref2) corresponding to the first upper limit current Iref3. The third comparison unit 130 includes a comparator 131, a resistor R31, a capacitor C31, and resistors R32 and R33. The resistance R31 is a resistance for setting the reference voltage Vref3. The comparator 131 compares the detected voltage Vcs with the reference voltage Vref3. The non-inverting input terminal of the comparator 131 is connected to the sense input pad 206. The inverting input terminal of the comparator 131 is connected to the sense ground pad 207 via the resistor R31. The output terminal of the comparator 131 is connected to a current limiting unit (not shown) of the drive unit 133, and outputs a comparison result between the detected voltage Vcs and the reference voltage Vref3. The comparator 131 outputs a comparison signal S13 which becomes a high level when the detected voltage Vcs is larger than the reference voltage Vref3 (Vcs> Vref3) and becomes a low level when the detected voltage Vcs is smaller than the reference voltage Vref3 (Vcs <Vref3). .. The specific circuit configuration of the comparator 131 is not limited.

The capacitor C31 is connected between the non-inverting input terminal and the inverting input terminal of the comparator 131. The capacitor C31 is the same capacitor as the capacitor C11 of the first comparison unit 110, and is connected for the same purpose. One terminal of the resistor R32 is connected to the non-inverting input terminal of the comparator 131, and the other terminal is connected to the sense input pad 206. One terminal of the resistor R33 is connected to the resistor R31, and the other terminal is connected to the sense ground pad 207. The resistor R33 may have one terminal connected to the inverting input terminal of the comparator 131 and the other terminal connected to the resistor R31. The resistance value of the resistor R32 and the resistance value of the resistor R33 are about the same. The resistances R32 and R33 are the same resistances as the resistances R12 and R13 of the first comparison unit 110, respectively, and are connected for the same purpose.

The fourth comparison unit 140 detects that the current Ic has reached the second upper limit current Iref4 by comparing the current Ic with the second upper limit current Iref4 (<Iref3). Actually, the fourth comparison unit 140 compares the detected voltage Vcs with the reference voltage Vref4 (<Vref3) corresponding to the second upper limit current Iref4. The fourth comparison unit 140 includes a comparator 141, a resistor R41, a capacitor C41, and resistors R42 and R43. The resistance R41 is a resistance for setting the reference voltage Vref4. Comparator 141 compares the detected voltage Vcs with the reference voltage Vref4. The non-inverting input terminal of the comparator 141 is connected to the sense input pad 206. The inverting input terminal of the comparator 141 is connected to the sense ground pad 207 via the resistor R41. The output terminal of the comparator 141 is connected to a current limiting unit (not shown) of the drive unit 133, and outputs a comparison result between the detected voltage Vcs and the reference voltage Vref 4. The comparator 141 outputs a comparison signal S14 which becomes a high level when the detected voltage Vcs is larger than the reference voltage Vref4 (Vcs> Vref4) and becomes a low level when the detected voltage Vcs is smaller than the reference voltage Vref4 (Vcs <Vref4). .. The specific circuit configuration of the comparator 141 is not limited.

The capacitor C41 is connected between the non-inverting input terminal and the inverting input terminal of the comparator 141. The capacitor C41 is the same capacitor as the capacitor C11 of the first comparison unit 110, and is connected for the same purpose. One terminal of the resistor R42 is connected to the non-inverting input terminal of the comparator 141, and the other terminal is connected to the sense input pad 206. One terminal of the resistor R43 is connected to the resistor R41, and the other terminal is connected to the sense ground pad 207. The resistor R43 may have one terminal connected to the inverting input terminal of the comparator 141 and the other terminal connected to the resistor R41. The resistance value of the resistor R42 and the resistance value of the resistor R43 are about the same. The resistances R42 and R43 are the same resistances as the resistances R12 and R13 of the first comparison unit 110, respectively, and are connected for the same purpose.

The current limiting unit of the drive unit 133 is in the ON period of the gate terminal of the switch element 11 based on the comparison signal S13 input from the third comparison unit 130 and the comparison signal S14 input from the fourth comparison unit 140. Limit the voltage of. This limits the current Ic flowing through the switch element 11. The current limiting unit limits the current Ic to the first upper limit current Iref3 by limiting the voltage during the ON period of the gate terminal of the switch element 11 when the comparison signal S13 is at a high level. Further, when the on state of the switch element 11 continues for a predetermined time, the current limiting unit is based on the comparison signal S14 (when the comparison signal S14 is at a high level) during the on period of the gate terminal of the switch element 11. By limiting the voltage, the current Ic is limited to the second upper limit current Iref4.

The ignition confirmation unit 134 may include a similar comparison unit in addition to the first comparison unit 110, the second comparison unit 120, the third comparison unit 130, and the fourth comparison unit 140. That is, the control circuit 13 may compare the detected voltage Vcs with a predetermined reference voltage to compare the current Ic flowing through the switch element 11 with the predetermined reference current, and use the comparison result signal for various controls. ..

FIG. 4 is a plan view showing an example of the layout of the functional IC of the control circuit 13. The control circuit 13 includes a semiconductor substrate 200. The power supply pad 201, ground pad 202, input pad 203, gate output pad 204, feedback output pad 205, sense input pad 206, and sense ground pad 207 of the control circuit 13 are arranged on the semiconductor substrate 200. Further, each functional element constituting the drive unit 133 and the ignition confirmation unit 134 of the control circuit 13 is formed on the semiconductor substrate 200. In FIG. 4, the thickness direction (plan view direction) of the semiconductor substrate 200 is the z direction (z1-z2 direction), and the direction along one side of the semiconductor substrate 200 orthogonal to the z direction (left-right direction in FIG. 4). Will be described as the x direction (x1-x2 direction), the z direction and the direction orthogonal to the x direction (vertical direction in FIG. 4) as the y direction (y1-y2 direction) (the same applies to FIG. 5). The x direction corresponds to the "first direction" of the present invention, and the y direction corresponds to the "second direction" of the present invention.

The power supply pad 201, the sense input pad 206, and the sense ground pad 207 are arranged at the ends of the semiconductor substrate 200 in the y1 direction. The power pad 201 is arranged at the end in the x2 direction, and the dimension in the x direction is longer than the dimension in the y direction. The sense input pad 206 is arranged near the end in the x1 direction, and the dimension y6 in the y direction is longer than the dimension x6 in the x direction. The sense ground pad 207 is arranged near the center in the x direction, and the dimension y7 in the y direction is longer than the dimension x7 in the x direction. The sense input pad 206 and the sense ground pad 207 correspond to the "first pad" and the "second pad" of the present invention, respectively. The ground pad 202, the input pad 203, and the feedback output pad 205 are arranged at the end of the semiconductor substrate 200 in the y2 direction. The ground pad 202 is arranged at the end in the x2 direction, and the dimension in the y direction is longer than the dimension in the x direction. The input pad 203 is arranged near the end in the x1 direction, and the dimension in the y direction is longer than the dimension in the x direction. The feedback output pad 205 is arranged near the center in the x direction, and the dimension in the y direction is longer than the dimension in the x direction. The gate output pad 204 is arranged at the end of the sense input pad 206 on the y2 side in the x1 direction, and the dimension in the x direction is longer than the dimension in the y direction. The shapes of the pads 201 to 207 match the direction in which the bonding wires are bonded.

The control circuit 13 includes regions 310,321,322,323,331,332,333,334,335,341,342,351,361 on the semiconductor substrate 200.

The region 310 is a region of the ignition confirmation unit 134 in which each functional element constituting the first comparison unit 110, the second comparison unit 120, the third comparison unit 130, and the fourth comparison unit 140 is formed. Region 310 is located near the sense input pad 206 and the sense ground pad 207. The region 310 is located between the sense input pad 206 and the sense ground pad 207 in the x direction. Further, the region 310 is adjacent to the sense input pad 206 and the sense ground pad 207 in the y direction. The entire region 310 is located on the sense input pad 206 and the sense ground pad 207 side (y1 direction side) from the center of the semiconductor substrate 200 in the y direction. Since the region 310 is arranged near the sense input pad 206 and the sense ground pad 207, for example, in the first comparison unit 110, the wiring from the sense input pad 206 to the resistor R12 and the sense ground pad 207 to the resistor R13. Wiring can be shortened. The same applies to the second comparison unit 120, the third comparison unit 130, and the fourth comparison unit 140.

FIG. 5 is a partially enlarged plan view showing the details of the region 310. Region 310 includes region 311, region 312, region 313, region 314 and region 315.

The region 311 is a region in which the resistors R12, R13, R22, R23, R32, R33, R42, and R43 are formed. In the region 311, the resistance R12 and the resistance R13 are arranged adjacent to each other, the resistance R22 and the resistance R23 are arranged adjacent to each other, the resistance R32 and the resistance R33 are arranged adjacent to each other, and the resistance R42 and the resistance R43 are arranged. Are placed adjacent to each other. The region 311 is arranged at the end in the x1 direction in the region 310. As shown in FIG. 4, the region 311 is located equidistant from the sense input pad 206 and the sense ground pad 207. More specifically, the center position of the region 311 in the x direction is equidistant from the x2 direction edge of the sense input pad 206 and the x1 direction edge of the sense ground pad 207 in the x direction. That is, the region 311 is located between the sense input pad 206 and the sense ground pad 207 in the x direction. Therefore, for example, in the first comparison unit 110, the wiring from the sense input pad 206 to the resistance R12 and the wiring from the sense ground pad 207 to the resistance R13 can be made to have the same length. The same applies to the second comparison unit 120, the third comparison unit 130, and the fourth comparison unit 140.

The region 312 is a region where the capacitors C11, C21, C31, and C41 are formed. The region 312 is adjacent to the region 311 and is arranged on the x2 direction side. As described above, the capacitors C11, C21, C31, and C41 each have two capacitors connected in parallel, and eight capacitors are formed in the region 312. Since the region 312 is adjacent to the region 311, for example, in the first comparison unit 110, the wiring connecting the capacitor C11 and the resistor R12 can be shortened. Further, when the resistor R13 is arranged on the comparator 111 side of the resistor R11, the wiring connecting the capacitor C11 and the resistor R13 can be shortened. The same applies to the second comparison unit 120, the third comparison unit 130, and the fourth comparison unit 140.

The region 313 is a region included in the comparators 111, 121, 131, 141 and in which two transistors (transistors TR1 and TR2 in FIG. 3) of the differential input unit are formed. The region 313 is adjacent to the region 312 and is arranged on the x2 direction side. Eight transistors are formed in the region 313. Since the region 313 is adjacent to the region 312, for example, in the first comparison unit 110, the wiring connecting the comparator 111 and the capacitor C11 can be shortened. The same applies to the second comparison unit 120, the third comparison unit 130, and the fourth comparison unit 140. Further, the area 313 is arranged near the area 311. Therefore, for example, in the first comparison unit 110, the wiring connecting the comparator 111 and the resistor R12 can be shortened. Further, when the resistor R13 is arranged on the comparator 111 side of the resistor R11, the wiring connecting the comparator 111 and the resistor R13 can be shortened. The same applies to the second comparison unit 120, the third comparison unit 130, and the fourth comparison unit 140.

The region 314 is a region included in the comparators 111, 121, 131, 141 and in which a protective diode (omitted in FIG. 3) is formed. The region 314 is adjacent to the region 313 and is arranged on the x2 direction side. Four diodes are formed in the region 314. In the present embodiment, two diodes are formed at the end in the y1 direction of the region 314, and two diodes are formed at the end in the y2 direction. Further, the region 314 includes a region 314a in which a functional element is not formed in the center in the y direction.

The region 315 is a region in which resistors (resistances R1 and R2 in FIG. 3) included in the comparators 111, 121, 131, and 141 for limiting the external surge current from the sense input pad 206 and the sense ground pad 207 are formed. Is. The region 315 is adjacent to the region 314 and is arranged on the x2 direction side. In the region 315, a plurality of resistors having different resistance values are connected in parallel to each other and formed for each comparator. Only one of the plurality of resistances connected in parallel is actually used. Other resistors will break the wiring and fail. The region 314a is not formed with a functional element so as not to interfere with the cutting operation.

The resistors R12, R13, R22, R23, R32, R33, R42, and R43 formed in the region 311 tend to generate heat by consuming noise. Further, the first comparison unit 110, the second comparison unit 120, the third comparison unit 130, and the fourth comparison unit 140 formed in the region 310 are susceptible to external noise. Therefore, in the present embodiment, in order to suppress the influence of these heat and external noise on the functional elements formed in the other regions, the region 310 is located at the position surrounded by the other regions in the center on the semiconductor substrate 200. Instead, it is arranged as close to the peripheral edge as possible on the semiconductor substrate 200.

Returning to FIG. 4, the region 321 is a region in which the resistors R11, R21, R31, and R41 that set the reference voltage for each comparator to compare with the detected voltage Vcs are formed. The resistance value of these resistors can be adjusted by laser trimming to adjust the reference voltage. The region 321 is adjacent to the region 310 and is arranged on the x2 direction side. The region 322 is a region of the ignition confirmation unit 134 in which the logical operation unit 101, the output transistor 102, and the like are formed. The area 323 is an area in which a protection circuit for protecting the control circuit 13 from surges and noise input from the feedback output pad 205 is formed.

The area 331 is an area in which a protection circuit for protecting the control circuit 13 from surges and noise input from the input pad 203 is formed. The region 332 is a region of the drive unit 133 in which a high-frequency filter, a comparator, a delay circuit, and the like are formed. The area 333 is an area in which an oscillation circuit, a timer, or the like that generates an internal clock is formed. Region 334 is a region where a logic circuit is formed. The area 335 is an area in which a driver or the like of the drive unit 133 is formed.

Region 341 is a region in which the internal power supply of the control circuit 13 is formed. The region 342 is a region in which a circuit for generating the internal reference voltage of the control circuit 13 is formed. The area 351 is an area in which a protection circuit for protecting the control circuit 13 from surges and noise input from the power supply pad 201 and the ground pad 202 is formed. Region 361 is a region where a test pad is formed. The layout of the functional IC of the control circuit 13 is not limited to that shown in FIGS. 4 and 5.

FIG. 6 is a plan view showing an example of the layout of the internal configuration of the igniter 1. The igniter 1 is housed in a lead frame package and is composed of, for example, a 6-pin SiP. In FIG. 6, a portion covered with a sealing resin made of, for example, a black epoxy resin is shown by a two-dot chain line. The igniter 1 includes leads 401 to 408. In addition, also in FIG. 6, it will be described based on the direction corresponding to the semiconductor substrate 200 of the control circuit 13 to be mounted.

The lead 401 has a power supply terminal VDD and is arranged at the end in the x2 direction of the package and at the end in the y2 direction. The lead 407 is arranged adjacent to the lead 401 on the y1 direction side, and is arranged at the end portion in the x2 direction of the package and the end portion in the y1 direction. The lead 402 has a ground terminal GND and is arranged adjacent to the lead 401 and the lead 407 on the x1 direction side. The lead 402 extends from the end in the y1 direction of the package to the end in the y2 direction. The lead 404 has an output terminal OUT and is arranged adjacent to the lead 402 on the x1 direction side. Leads 404 are located at the end of the package in the x1 direction and extend from the end in the y1 direction of the package to the end in the y2 direction. The lead 406 is located at the end of the package in the y1 direction between the lead 402 and the lead 404. Leads 403,405 and 408 are located at the end of the package in the y2 direction between the leads 402 and the leads 404. The lead 403 has an input terminal IN and is arranged adjacent to the lead 404. The lead 408 has unused terminals and is arranged adjacent to the lead 402. The lead 405 has a feedback terminal FB and is arranged between the lead 405 and the lead 408. The leads 402, 404, and 406 correspond to the "second lead", "first lead", and "third lead" of the present invention, respectively.

Each of the leads 402 to 408 is provided with a through hole 400a. By filling the hole 400a with the sealing resin when covered with the sealing resin, it is possible to prevent the sealing resin from peeling off from the leads 402 to 408 during the use of the igniter 1. Further, in each of the leads 401 to 408, a groove 400b is formed at the boundary between the portion covered with the sealing resin and the portion not covered with the sealing resin (see the two-dot chain line in FIG. 6). The groove 400b suppresses the flow of a protective resin such as polyimide applied to protect the bonding point of the bonding wire to the lead in the step before covering with the sealing resin.

A semiconductor substrate 200 in which the control circuit 13 is integrated is mounted on the lead 402. The power pad 201 is connected to the lead 407 by a bonding wire 501. The ground pad 202 is connected to the lead 402 (ground terminal GND) by the bonding wire 502. The input pad 203 is connected to the lead 403 (input terminal IN) by the bonding wire 503. The gate output pad 204 is connected to the pad 602, which will be described later, by the bonding wire 504. The feedback output pad 205 is connected to the lead 405 (feedback terminal FB) by the bonding wire 505. The sense input pad 206 is connected to the lead 406 by a bonding wire 506. The sense ground pad 207 is connected to the lead 402 by the bonding wire 507. The bonding wires 501 to 507 are made of, for example, Al. The bonding wires 501 to 507 may be made of other metals such as Al alloy and Au and Cu. The bonding wires 506 and 507 correspond to the "third bonding wire" and the "fourth bonding wire" of the present invention, respectively.

The switch element 11 is mounted on the lead 404. The switch element 11 includes a semiconductor substrate 600, pads 601, 602, and a back surface electrode 603. The semiconductor substrate 600 is a substrate on which a p-type semiconductor layer and an n-type semiconductor layer for constituting a switch element 11 such as an IGBT are formed. The pad 601 is an emitter electrode. The pad 602 is a gate electrode. The back surface electrode 603 is a collector electrode. The pads 601 and 602 are arranged on the surface of the semiconductor substrate 600 (the surface on the front side of the paper surface in FIG. 6). The back surface electrode 603 is arranged on the back surface of the semiconductor substrate 600. The semiconductor substrate 600 (switch element 11) is mounted so that the back surface electrode 603 is in contact with the lead 404. As a result, the collector terminal of the switch element 11 is connected to the output terminal OUT. The pad 601 is connected to the lead 402 by the bonding wire 509, the lead 406 and the bonding wire 508. As a result, the emitter terminal of the switch element 11 is connected to the ground terminal GND. The pad 602 is connected to the gate output pad 204 by the bonding wire 504. As a result, the gate drive signal is input from the control circuit 13 to the gate terminal of the switch element 11. The pads 601, 602 and the back surface electrodes 603 correspond to the "output electrode", "control electrode", and "input electrode" of the present invention, respectively.

In this embodiment, the pad 601 is not directly connected to the lead 402 (ground terminal GND) by the bonding wire, but is connected to the lead 406 by the bonding wire 509. The lead 406 is connected to the lead 402 (ground terminal GND) by the bonding wire 508, and is connected to the sense input pad 206 by the bonding wire 506. Therefore, the resistance component of the bonding wire 508 becomes the current detection resistor 12.

The bonding wires 508 and 509 are made of, for example, Al. The bonding wires 508 and 509 may be made of other metals such as Al alloy and Au and Cu. In the bonding wire 508, the resistance component is used for the current detection resistor 12. In order to improve the detection accuracy of the ignition confirmation unit 134, it is necessary to increase the resistance value of the current detection resistor 12. Therefore, it is desirable that the bonding wire 508 is Al in order to increase the resistance value. Further, it is desirable that the bonding wire 508 is as long as possible in order to increase the resistance value. Therefore, the bonding point 508a of the bonding wire 508 to the lead 406 is arranged at a position on the x1 direction side of the lead 406 as much as possible. In the present embodiment, the bonding point 508a is arranged on the x1 direction side by x21 from the bonding point 509a of the bonding wire 509 to the lead 406, and is arranged on the x1 direction side by x22 from the bonding point 506a of the bonding wire 506 to the lead 406. Will be done. Further, the bonding point 508b of the bonding wire 508 to the lead 402 is arranged at a position on the x2 direction side of the lead 402 as much as possible. In the present embodiment, the bonding point 508b is arranged on the x2 direction side by x23 from the bonding point 507a of the bonding wire 507 to the lead 402. In the present embodiment, the dimension x11 in the x direction of the bonding wire 508 is larger than the dimension x12 in the x direction of the semiconductor substrate 200. Further, in the present embodiment, the joining point 508a is arranged on the y1 direction side from the joining point 506a, and the joining point 508b is arranged on the y1 direction side from the joining point 507a. Further, in the present embodiment, the junction point 508a is arranged on the y1 direction side by y21 from the junction point 509a. The arrangement positions of the joining points 508a and 508b are not limited. Further, in the present embodiment, in order to make the bonding wire 508 as long as possible, the bonding wire 508 is formed so that the height of the loop (the distance between the portion farthest from the lead 402 and the lead 402 in the z direction) is high. Will be done. In the present embodiment, the height of the loop of the bonding wire 508 is formed higher than the height of the loop of the bonding wire 509 and the bonding wires 501 to 507. The height of the loop of the bonding wire 508 is not limited.

Further, since a relatively large current flows through the bonding wires 508 and 509, wires thicker than the bonding wires 501 to 507 are used. The thickness of each bonding wire 501 to 509 is not limited. However, it is desirable that the thickness of the bonding wires 508 and 509 is equal to or thicker than that of the bonding wires 501 to 507. The bonding wires 508 and 509 are bonded after the bonding wires 501 to 507 are bonded. The bonding wires 508 and 509 correspond to the "second bonding wire" and the "first bonding wire" of the present invention, respectively.

The bonding point 506a of the bonding wire 506 is arranged so as to be as close as possible to the bonding point 508a of the bonding wire 508. Further, the bonding point 507a of the bonding wire 507 is arranged so as to be as close as possible to the bonding point 508b of the bonding wire 508.

The igniter 1 includes a high-frequency filter (not described in FIG. 1) between the power supply terminal VDD and the power supply pad 201 of the control circuit 13. The high frequency filter is a π-type low-pass filter including capacitors 14, 16 and resistors 15. The resistor 15 is bridge-connected between the lead 401 (power supply terminal VDD) and the lead 407. The capacitor 14 is bridge-connected between the lead 401 and the lead 402 (ground terminal GND). The capacitor 16 is bridge-connected between the lead 407 and the lead 402 (ground terminal GND). The lead 407 is connected to the power supply pad 201 of the control circuit 13 by the bonding wire 501. As a result, a high frequency filter that removes high frequency noise input from the power supply terminal VDD is formed.

The layout of the internal configuration of the igniter 1 is not limited to that shown in FIG. Further, the igniter 1 is not limited to the case where it is housed in SiP, and may be housed in a DiP (Dual In-line Package) or a ZIP (Zigzag In-line Package). It may also be housed in a surface mount package.

Next, an example of the method for manufacturing the igniter 1 will be described below.

First, a lead frame in which a portion to be each lead 401 to 408 is formed is prepared. Next, the semiconductor substrate 200, 600, the capacitors 14, 16 and the resistor 15 are mounted on the lead frame.

Next, the bonding wire 509 is bonded. At this time, as shown in FIG. 7, first, one end of the wire is bonded to the pad 601 (first bonding). Then, while pulling out the wire, the capillary C is moved to the lead 406, the wire is bonded to the lead 406 (second bonding), and the wire is cut by the cutter. As a result, the bonding wire 509 is formed.

Next, the bonding wire 508 is bonded. At this time, as shown in FIG. 8, first, one end of the wire is joined to the lead 406. At this time, the wires are bonded to the positions of the lead 406 in the x1 direction and the y1 direction from the bonding point 509a of the bonding wire 509 (see the bonding point 508a). Then, while pulling out the wire, the capillary C is moved to the lead 402, the wire is joined to the lead 402, and the wire is cut by the cutter. As a result, the bonding wire 508 is formed.

Next, the bonding wires 501 to 507 are bonded. Next, a sealing resin covering the lead frame, the semiconductor substrates 200, 600, the capacitors 14, 16, the resistors 15, and the bonding wires 501 to 509 is formed by, for example, molding. Next, the igniter 1 is manufactured by appropriately cutting the lead frame. The order of each process is not limited. For example, the bonding wires 509 may be bonded after bonding the bonding wires 501 to 507.

Next, the action of the igniter 1 will be described.

According to this embodiment, the pad 601 of the semiconductor substrate 600 and the lead 406 are connected by the bonding wire 509. Further, the lead 406 and the lead 402 are connected by the bonding wire 508, and the lead 406 and the sense input pad 206 are connected by the bonding wire 506. That is, the bonding wire 508 is used as the current detection resistor 12. Leads 406 and bonding wires 508 are less susceptible to power cycles. Therefore, even if the bonding portion between the bonding wire 509 and the pad 601 or the pad 601 itself deteriorates due to the influence of the power cycle, the change in the resistance value of the current detection resistor 12 is suppressed. As a result, the malfunction of the ignition confirmation unit 134 can be suppressed.

Further, according to the present embodiment, the bonding point 508a of the bonding wire 508 is arranged on the x1 direction side from the bonding point 509a of the bonding wire 509 and the bonding point 506a of the bonding wire 506, and the bonding point 508b of the bonding wire 508 is the bonding wire. It is arranged on the x2 direction side from the bonding point 507a of 507. Further, the bonding wire 508 is formed so that the height of the loop (the distance between the portion distant from the lead 402 and the lead 402 in the z direction) is high. As a result, the bonding wire 508 can be lengthened and the resistance value can be increased. Therefore, the detection accuracy of the ignition confirmation unit 134 can be improved.

Further, according to the present embodiment, the bonding point 506a of the bonding wire 506 is arranged so as to be as close as possible to the bonding point 508a of the bonding wire 508. As a result, it is possible to prevent the resistance component of the lead 406 between the junction point 506a and the junction point 508a from being included in the current detection resistor 12. Further, the bonding point 507a of the bonding wire 507 is arranged so as to be as close as possible to the bonding point 508b of the bonding wire 508. As a result, the influence of the resistance component of the lead 402 between the junction point 507a and the junction point 508b on the voltage detection by the ignition confirmation unit 134 can be suppressed.

Further, according to the present embodiment, the bonding wire 509 is formed by first joining one end of the wire to the pad 601 and then joining the wire to the lead 406, and then cutting the wire with a cutter. Since the wire is cut on the lead 406, the cutter does not damage the semiconductor substrate 600. Further, the bonding wire 508 is formed after the bonding wire 509 is formed. The bonding wire 508 is formed by first joining one end of the wire to the lead 406, then joining the wire to the lead 402, and then cutting the wire with a cutter. After the second bonding of the bonding wire 509, the first bonding of the bonding wire 508 is performed on the same lead 402. Work efficiency is good because the distance to move the capillary C is short. Further, the bonding point 508a of the bonding wire 508 is arranged on the y1 direction side from the bonding point 509a of the bonding wire 509. Therefore, it is possible to prevent the bonding wire 509 extending from the lead 406 toward the y2 direction from interfering with the formation of the bonding wire 508.

Further, according to the present embodiment, the bonding wires 501 to 507 are bonded to the inside of the bonding wires 508 and 509 as viewed from the semiconductor substrate 200 after the bonding wires 508 and 509 are bonded. Therefore, the bonding wires 508 and 509 are less likely to get in the way when bonding the bonding wires 501 to 507.

Further, according to the present embodiment, the sense input pad 206 and the sense ground pad 207 are arranged at the ends in the y1 direction, and the dimension y6 in the y direction of the sense input pad 206 is longer than the dimension x6 in the x direction, and the sense ground is grounded. The dimension y7 in the y direction of the pad 207 is longer than the dimension x7 in the x direction. Therefore, it is easy to bond the bonding wire 506 or the bonding wire 507 extending in the y1 direction side.

<Second Embodiment>
FIG. 9 shows the igniter 1 according to the second embodiment of the present disclosure, and is a plan view showing an example of the layout of the internal configuration of the igniter 1. In the igniter 1 of the present embodiment, the position of the lead 406 is different from that of the above-described embodiment. In this embodiment, the lead 406 is placed at the end in the x1 direction of the package, not between the lead 402 and the lead 406, at the end in the y1 direction.

Also in this embodiment, the same effect as that of the first embodiment can be obtained. Further, according to the present embodiment, since the length of the bonding wire 508 can be increased, the resistance value of the current detection resistor 12 can be increased. The arrangement of the leads 401 to 408 is not limited to that of the first and second embodiments, and is appropriately designed.

The igniter and vehicle according to the present disclosure are not limited to the above-described embodiments. The specific configuration of each part of the igniter and the vehicle according to the present disclosure can be freely changed in design.

[Appendix 1]
A switch element having an input electrode, an output electrode and a control electrode,
A first lead in which the switch element is mounted in contact with the input electrode and is connected to the primary coil of the ignition coil.
The second lead to be grounded and
With the first lead and the third lead isolated from the second lead,
A first bonding wire connecting the output electrode and the third lead,
A second bonding wire connecting the third lead and the second lead,
A control IC that drives the switch element based on an ignition instruction signal input from the engine control device and generates an ignition confirmation signal to be output to the engine control device based on the voltage of the third lead.
An igniter characterized by being equipped with.
[Appendix 2]
The second bonding wire is made of Al.
The igniter described in Appendix 1.
[Appendix 3]
The third lead is arranged between the first lead and the second lead.
The igniter according to Appendix 1 or 2.
[Appendix 4]
The control IC
Mounted on the second lead,
The first pad to which the voltage of the third lead is input and
The second pad to be grounded and
Equipped with
The first pad and the second pad are arranged in the first direction in which the first lead and the second lead are arranged.
The igniter according to any one of Supplementary note 1 to 3.
[Appendix 5]
The dimension of the second bonding wire in the first direction is larger than the dimension of the control IC in the first direction.
The igniter described in Appendix 4.
[Appendix 6]
In the first direction, the bonding point of the second bonding wire to the third lead is located on the first lead side of the bonding point of the first bonding wire to the third lead.
The igniter according to Appendix 4 or 5.
[Appendix 7]
In the first direction and the second direction orthogonal to the thickness direction of the first lead, the bonding point of the second bonding wire to the third lead is the bonding of the first bonding wire to the third lead. Located on the opposite side of the control IC from the point,
The igniter according to any one of Supplementary note 4 to 6.
[Appendix 8]
A third bonding wire connecting the first pad and the third lead is further provided.
The igniter according to any one of Supplementary note 4 to 7.
[Appendix 9]
The second bonding wire is thicker than the third bonding wire.
The igniter described in Appendix 8.
[Appendix 10]
In the first direction and the second direction orthogonal to the thickness direction of the first lead, the bonding point of the second bonding wire to the third lead is the bonding of the third bonding wire to the third lead. Located on the opposite side of the control IC from the point,
The igniter according to Appendix 8 or 9.
[Appendix 11]
Further, a fourth bonding wire for connecting the second pad and the second lead is provided.
In the first direction, the bonding point of the second bonding wire to the second lead is located on the side opposite to the first lead from the bonding point of the fourth bonding wire to the second lead.
The igniter according to any one of Supplementary note 4 to 10.
[Appendix 12]
The first pad and the second pad are
It is arranged at the end of the control IC on the third lead side in the first direction and the second direction orthogonal to the thickness direction of the first lead.
The dimension in the second direction is longer than the dimension in the first direction.
The igniter according to any one of Supplementary note 4 to 11.
[Appendix 13]
In the thickness direction of the first lead, the distance between the portion where the second bonding wire is most distant from the third lead and the third lead is the portion where the first bonding wire is most distant from the third lead. Longer than the distance between the wire and the third lead,
The igniter according to any one of Supplementary Notes 1 to 12.
[Appendix 14]
The switch element is an IGBT, the input electrode is a collector electrode, the output electrode is an emitter electrode, and the control electrode is a gate electrode.
The igniter according to any one of Supplementary Notes 1 to 13.
[Appendix 15]
The igniter described in any of Supplementary notes 1 to 14 and
With a spark plug,
An ignition coil including a primary coil connected to the first lead and a secondary coil connected to the spark plug.
An engine control device that generates the ignition instruction signal and outputs it to the igniter.
A vehicle characterized by being equipped with.

1: Igniter 11: Switch element 12: Current detection resistor 13: Control circuit 133: Drive unit 134: Ignition confirmation unit 101: Logic calculation unit 102: Output transistor 110: First comparison unit 111: Comparator R11, R12, R13: Resistance C11: Condenser 120: Second comparison unit 121: Comparator R21, R22, R23: Resistance C21: Condenser 130: Third comparison unit 131: Comparator R31, R32, R33: Resistance C31: Condenser 140: Fourth comparison unit 141: Comparator R41, R42, R43: Resistance C41: Condenser CS1 to CS3: Current source R1, R2: Resistance TR1 to TR3: Transistor 200: Semiconductor substrate 201: Power supply pad 202: Ground pad 203: Input pad 204: Gate output pad 205: Feedback output pad 206: Sense input pad 207: Sense ground pad 310,311,312,313,314,314a, 315,321,322,323,331,332,333,334,335,341,342,351,361 : Area FB: Feedback terminal GND: Ground terminal IN: Input terminal OUT: Output terminal VDD: Power supply terminal 401 to 408: Lead 400a: Hole 400b: Groove 501 to 509: Bonding wire 506a, 507a, 508a, 508b, 509a: Bonding Point 600: Semiconductor substrate 601, 602: Pad 603: Backside electrode 14: Condenser 15: Resistance 16: Condenser 2: ECU
3: Spark plug 4: Ignition coil 41: Primary coil 42: Secondary coil 5: Battery A: Vehicle C: Capillary

Claims (18)

A switch element having an input electrode, an output electrode and a control electrode,
A first lead in which the switch element is mounted in contact with the input electrode and is connected to the primary coil of the ignition coil.
The second lead to be grounded and
With the first lead and the third lead isolated from the second lead,
A first bonding wire connecting the output electrode and the third lead,
A second bonding wire connecting the third lead and the second lead,
A control IC that drives the switch element based on an ignition instruction signal input from the engine control device and generates an ignition confirmation signal to be output to the engine control device based on the voltage of the third lead.
An igniter characterized by being equipped with. The second bonding wire is made of Al.
The igniter according to claim 1. The third lead is arranged between the first lead and the second lead.
The igniter according to claim 1 or 2. The control IC
Mounted on the second lead,
The first pad to which the voltage of the third lead is input and
The second pad to be grounded and
Equipped with
The first pad and the second pad are arranged in the first direction in which the first lead and the second lead are arranged.
The igniter according to any one of claims 1 to 3. The dimension of the second bonding wire in the first direction is larger than the dimension of the control IC in the first direction.
The igniter according to claim 4. In the first direction, the bonding point of the second bonding wire to the third lead is located on the first lead side of the bonding point of the first bonding wire to the third lead.
The igniter according to claim 4 or 5. In the first direction and the second direction orthogonal to the thickness direction of the first lead, the bonding point of the second bonding wire to the third lead is the bonding of the first bonding wire to the third lead. Located on the opposite side of the control IC from the point,
The igniter according to any one of claims 4 to 6. A third bonding wire connecting the first pad and the third lead is further provided.
The igniter according to any one of claims 4 to 7. The second bonding wire is thicker than the third bonding wire.
The igniter according to claim 8. In the first direction and the second direction orthogonal to the thickness direction of the first lead, the bonding point of the second bonding wire to the third lead is the bonding of the third bonding wire to the third lead. Located on the opposite side of the control IC from the point,
The igniter according to claim 8 or 9. Further, a fourth bonding wire for connecting the second pad and the second lead is provided.
In the first direction, the bonding point of the second bonding wire to the second lead is located on the side opposite to the first lead from the bonding point of the fourth bonding wire to the second lead.
The igniter according to any one of claims 4 to 10. The first pad and the second pad are
It is arranged at the end of the control IC on the third lead side in the first direction and the second direction orthogonal to the thickness direction of the first lead.
The dimension in the second direction is longer than the dimension in the first direction.
The igniter according to any one of claims 4 to 11. In the thickness direction of the first lead, the distance between the portion where the second bonding wire is most distant from the third lead and the third lead is the portion where the first bonding wire is most distant from the third lead. Longer than the distance between the wire and the third lead,
The igniter according to any one of claims 1 to 12. The switch element is an IGBT, the input electrode is a collector electrode, the output electrode is an emitter electrode, and the control electrode is a gate electrode.
The igniter according to any one of claims 1 to 13. The fourth lead that outputs the ignition confirmation signal and
The fifth lead to which the power of the control IC is input and
Further prepare
The control IC
The third pad conducting to the fourth lead and
The fourth pad conducting to the fifth lead and
Is equipped with
The igniter according to any one of claims 1 to 14. Further comprising a high frequency filter connected between the 4th pad and the 5th lead.
The igniter according to claim 15. The height of the loop of the second bonding wire is higher than the height of the loop of the first bonding wire.
The igniter according to any one of claims 1 to 16. The igniter according to any one of claims 1 to 17 and the igniter
With a spark plug,
The ignition coil including the primary coil and the secondary coil connected to the spark plug, and the ignition coil.
The engine control device that generates the ignition instruction signal and outputs it to the igniter,
A vehicle characterized by being equipped with.

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