JP2005129613A - Electronic device - Google Patents

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JP2005129613A
JP2005129613A JP2003361597A JP2003361597A JP2005129613A JP 2005129613 A JP2005129613 A JP 2005129613A JP 2003361597 A JP2003361597 A JP 2003361597A JP 2003361597 A JP2003361597 A JP 2003361597A JP 2005129613 A JP2005129613 A JP 2005129613A
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bonding wire
current detection
electronic device
voltage
power transistor
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JP2003361597A
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Koichiro Hashimoto
幸一郎 橋本
Masamichi Yanagida
正道 柳田
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2003361597A priority Critical patent/JP2005129613A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic device in which mounting density of a loading component can be improved. <P>SOLUTION: A control IC1, a power MOS transistor 2 and a current detection resistor R2 are mounted on a module substrate. The source PAD of the power MOS transistor 2 and the current detection terminal of the control IC1 are connected by a bonding wire (1)3a, and the source PAD of the power MOS transistor 2 and the current detection resistor R2 are connected by a bonding wire (2)3b. The mounting area of the current detection resistor R2 can be reduced by considering the bonding wire (2)3b as a resistance element. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、電子装置に関し、特に、搭載部品間の接続にボンディングワイヤを用いている電子装置に適用して有効な技術に関するものである。   The present invention relates to an electronic device, and more particularly to a technique effective when applied to an electronic device using a bonding wire for connection between mounted components.

本発明者が検討したところによれば、搭載部品間の接続にボンディングワイヤを用いている電子装置に関しては、以下のような技術が考えられる。   According to a study by the present inventor, the following techniques can be considered for an electronic device using bonding wires for connection between mounted components.

例えば、パワートランジスタを搭載したモジュールや、ＳＩＰ（Ｓｙｓｔｅｍ Ｉｎ Ｐａｃｋａｇｅ）およびハイブリッドＩＣ等の電子装置において、その搭載部品間の接続にボンディングワイヤを用いる場合がある。この場合、そのボンディングワイヤは、配線材料とみなされ、一般的には低抵抗のものが望まれる。   For example, in a module equipped with a power transistor, an electronic device such as a SIP (System In Package) and a hybrid IC, a bonding wire may be used for connection between the mounted components. In this case, the bonding wire is regarded as a wiring material and generally has a low resistance.

ところで、前記のような搭載部品間の接続にボンディングワイヤを用いている電子装置の技術について、本発明者が検討した結果、以下のようなことが明らかとなった。   By the way, as a result of the study of the electronic device using the bonding wire for the connection between the mounting parts as described above, the following has been clarified.

近年、実装技術の向上に伴い、電子装置が小型化し、搭載部品の実装密度が高くなってきている。こうした中、例えば、ＩＣ（Ｉｎｔｅｇｒａｔｅｄ Ｃｉｒｃｕｉｔ）の外部端子に抵抗を接続したいような場合、基板上にＩＣのベアチップと抵抗素子を実装し、ベアチップ表面の外部端子から抵抗素子に対してワイヤボンディングを行うような方法が考えられる。   In recent years, with the improvement of mounting technology, electronic devices have become smaller and the mounting density of mounted components has increased. Under these circumstances, for example, when a resistor is to be connected to an external terminal of an IC (Integrated Circuit), the bare chip and the resistive element of the IC are mounted on the substrate, and wire bonding is performed from the external terminal on the bare chip surface to the resistive element. Such a method can be considered.

この抵抗素子としては、例えば、幅や長さによって抵抗値を調整可能な導体抵抗などを用いることができる。この導体抵抗の素材としては、Ａｇ−Ｐｄ（銀／パラジウム合金）やＡｇ−Ｐｔ（銀／プラチナ合金）などが挙げられるが、とりわけ、抵抗値が小さいＡｇ−Ｐｔを用いた場合には比較的広い実装面積が必要になる。   As this resistance element, for example, a conductor resistance whose resistance value can be adjusted by the width or length can be used. Examples of the material for the conductor resistance include Ag—Pd (silver / palladium alloy) and Ag—Pt (silver / platinum alloy). In particular, when Ag—Pt having a small resistance value is used, A large mounting area is required.

そこで、本発明の目的は、搭載部品の実装密度を向上されることが可能な電子装置を提供することにある。   Accordingly, an object of the present invention is to provide an electronic device capable of improving the mounting density of mounted components.

本発明の前記ならびにその他の目的と新規な特徴は、本明細書の記述および添付図面から明らかになるであろう。   The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

本願において開示される発明のうち、代表的なものの概要を簡単に説明すれば、次のとおりである。   Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

本発明による電子装置は、パワートランジスタと、電流を検出するためにその電流を電圧に変換する電流検出抵抗と、電圧を検出するための入力端子を備えた制御回路とを有する電子装置であって、前記パワートランジスタの外部端子から前記制御回路の入力端子に接続された第１のボンディングワイヤと、前記パワートランジスタの外部端子から前記電流検出抵抗に接続された第２のボンディングワイヤとを有するものである。   An electronic device according to the present invention is an electronic device having a power transistor, a current detection resistor for converting the current into a voltage to detect the current, and a control circuit having an input terminal for detecting the voltage. A first bonding wire connected from the external terminal of the power transistor to the input terminal of the control circuit, and a second bonding wire connected from the external terminal of the power transistor to the current detection resistor. is there.

また、本発明による電子装置は、パワートランジスタと、電圧を検出するための入力端子を備えた制御回路とを有する電子装置であって、前記パワートランジスタの外部端子から前記制御回路の入力端子に接続された第１のボンディングワイヤと、前記パワートランジスタの外部端子から接地電位に接続された第２のボンディングワイヤとを有するものである。   The electronic device according to the present invention is an electronic device having a power transistor and a control circuit having an input terminal for detecting a voltage, and is connected from an external terminal of the power transistor to an input terminal of the control circuit. And a second bonding wire connected to the ground potential from the external terminal of the power transistor.

そして、前記第１のボンディングワイヤは、前記パワートランジスタの外部端子から前記制御回路の入力端子に配線する機能を有し、前記第２のボンディングワイヤは、前記パワートランジスタに流れる電流を電圧に変換するための抵抗素子となる機能を有している。   The first bonding wire has a function of wiring from an external terminal of the power transistor to an input terminal of the control circuit, and the second bonding wire converts a current flowing through the power transistor into a voltage. Therefore, it has a function to be a resistance element.

これらの構成によって、ボンディングワイヤの一端に、導体抵抗やチップ抵抗などといった通常の抵抗素子を接続するような場合、その通常の抵抗素子の実装面積を削減または低減することが可能になる。また、とりわけＩＣレギュレータの過電流保護回路などに適用した場合に、電子装置の小型化および高密度化が可能となる。   With these configurations, when a normal resistance element such as a conductor resistance or a chip resistance is connected to one end of the bonding wire, the mounting area of the normal resistance element can be reduced or reduced. In particular, when applied to an overcurrent protection circuit of an IC regulator, the electronic device can be reduced in size and density.

ところで、前記第２のボンディングワイヤは、例えば、複数本で構成し、その複数本による並列接続の抵抗素子とすることができる。とりわけ、パワートランジスタにおいては、上面のパッドからワイヤボンディングが行われる場合が多く、また、ボンディングワイヤに電流容量が要求される場合も多い。   By the way, the second bonding wire may be composed of, for example, a plurality of resistance elements connected in parallel by the plurality of the second bonding wires. In particular, in a power transistor, wire bonding is often performed from a pad on the upper surface, and a current capacity is often required for the bonding wire.

したがって、ボンディングワイヤを、複数本による並列接続の抵抗素子として機能させ、抵抗値が足りない場合にはその先に直列で通常の抵抗素子を接続する構成としてもよい。このように、ボンディングワイヤと通常の抵抗素子とを組み合わせることで、通常の抵抗素子の実装面積を低減させつつ、必要な電流容量と抵抗値を柔軟に調整することが可能になる。   Therefore, the bonding wire may function as a resistance element connected in parallel by a plurality of wires, and when the resistance value is insufficient, a normal resistance element may be connected in series to that end. In this way, by combining the bonding wire and the normal resistance element, it is possible to flexibly adjust the necessary current capacity and resistance value while reducing the mounting area of the normal resistance element.

ボンディングワイヤを抵抗素子とみなすことによって、電子装置における搭載部品の実装密度を向上されることが可能になる。   By regarding the bonding wire as a resistance element, it is possible to improve the mounting density of mounted components in the electronic device.

以下、本発明の実施の形態を図面に基づいて詳細に説明する。なお、実施の形態を説明するための全図において、同一の部材には原則として同一の符号を付し、その繰り返しの説明は省略する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted.

本発明の一実施の形態の電子装置は、抵抗素子とみなしたボンディングワイヤを有することを特徴としている。その電子装置の一例を図１に示す。図１は、本発明の一実施の形態の電子装置において、抵抗素子とみなしたボンディングワイヤを電流検出回路に適用した場合の構成の一例を示す図である。   An electronic device according to an embodiment of the present invention includes a bonding wire regarded as a resistance element. An example of the electronic device is shown in FIG. FIG. 1 is a diagram illustrating an example of a configuration when a bonding wire regarded as a resistance element is applied to a current detection circuit in an electronic device according to an embodiment of the present invention.

図１に示す電流検出回路（電子装置）は、例えば、一つのモジュール基板上に、制御ＩＣ１と、外部端子の一つであるソースＰＡＤを備えたパワーＭＯＳトランジスタ（パワートランジスタ）２と、電流検出抵抗Ｒ２などが実装され、それらの接続部材として、ボンディングワイヤ（１）（第１のボンディングワイヤ）３ａと、ボンディングワイヤ（２）（第２のボンディングワイヤ）３ｂなどを備えている。   The current detection circuit (electronic device) shown in FIG. 1 includes, for example, a control IC 1, a power MOS transistor (power transistor) 2 having a source PAD that is one of external terminals, and a current detection on one module substrate. A resistor R2 and the like are mounted, and as their connection members, a bonding wire (1) (first bonding wire) 3a, a bonding wire (2) (second bonding wire) 3b, and the like are provided.

ボンディングワイヤ（１）３ａは、パワーＭＯＳトランジスタ２のソースＰＡＤと制御ＩＣ１の電流検出端子とを接続し、ボンディングワイヤ（２）３ｂは、パワーＭＯＳトランジスタ２のソースＰＡＤと電流検出抵抗Ｒ２とを接続している。また、パワーＭＯＳトランジスタ２のゲート端子は、制御ＩＣ１に接続されている。   The bonding wire (1) 3a connects the source PAD of the power MOS transistor 2 and the current detection terminal of the control IC 1, and the bonding wire (2) 3b connects the source PAD of the power MOS transistor 2 and the current detection resistor R2. doing. The gate terminal of the power MOS transistor 2 is connected to the control IC 1.

この図１に示す電流検出回路は、パワーＭＯＳトランジスタ２のソースＰＡＤからＧＮＤ（グラウンド：接地電位）に向かって流れる電流を検出し、制御する機能を有している。すなわち、ソースＰＡＤからＧＮＤに流れる電流を、抵抗素子として機能するボンディングワイヤ（２）３ｂと電流検出抵抗Ｒ２との直列抵抗で電圧に変換し、その電圧を、配線として機能するボンディングワイヤ（１）３ａによって制御ＩＣ１の電流検出端子に入力している。そして、制御ＩＣ１は、その検出した電圧（電流）に基づいて、パワーＭＯＳトランジスタ２のゲート端子をコントロールする。   The current detection circuit shown in FIG. 1 has a function of detecting and controlling a current flowing from the source PAD of the power MOS transistor 2 toward GND (ground: ground potential). That is, the current flowing from the source PAD to GND is converted into a voltage by the series resistance of the bonding wire (2) 3b functioning as a resistance element and the current detection resistor R2, and the voltage is bonded to the bonding wire (1) functioning as a wiring. The signal is input to the current detection terminal of the control IC 1 by 3a. The control IC 1 controls the gate terminal of the power MOS transistor 2 based on the detected voltage (current).

ここで、本発明を判り易くするため、従来技術におけるボンディングワイヤの使用例を図２に示す。図２は、本発明の前提となる従来技術の電子装置において、ボンディングワイヤを用いた電流検出回路の構成の一例を示す図である。図２に示す電流検出回路は、図１の場合と比較して、パワーＭＯＳトランジスタ２のソースＰＡＤから、制御ＩＣ１の電流検出端子と電流検出抵抗Ｒ１の接続点に１本のボンディングワイヤ３ｃを接続した構成となっている。   Here, in order to make the present invention easier to understand, an example of the use of bonding wires in the prior art is shown in FIG. FIG. 2 is a diagram showing an example of a configuration of a current detection circuit using a bonding wire in a conventional electronic device which is a premise of the present invention. In the current detection circuit shown in FIG. 2, compared to the case of FIG. 1, one bonding wire 3c is connected from the source PAD of the power MOS transistor 2 to the connection point between the current detection terminal of the control IC 1 and the current detection resistor R1. It has become the composition.

つまり、この場合のボンディングワイヤ３ｃは、配線とみなされている。したがって、図２に示す電流検出回路は、電流検出抵抗Ｒ１のみによって電流を電圧に変換し、それを電流検出端子に入力することでパワーＭＯＳトランジスタ２に流れる電流の検出を行っている。   That is, the bonding wire 3c in this case is regarded as a wiring. Therefore, the current detection circuit shown in FIG. 2 detects the current flowing through the power MOS transistor 2 by converting the current into a voltage only by the current detection resistor R1 and inputting it to the current detection terminal.

ここで、この電流検出抵抗Ｒ１を、例えば、Ａｇ−Ｐｔを素材とした導体抵抗で形成した場合、比較的広い面積が必要となる。これによって、従来技術においては、実装密度が低下するという問題が考えられた。   Here, when the current detection resistor R1 is formed of, for example, a conductor resistance made of Ag-Pt, a relatively large area is required. As a result, the conventional technology has a problem that the mounting density is lowered.

一方、図１に示したように、ボンディングワイヤ（２）３ｂを抵抗素子とみなし、電流検出抵抗Ｒ２と直列に接続することによって、電流検出抵抗Ｒ２（図２での電流検出抵抗Ｒ１）の抵抗値を小さくすることができ、その実装面積を低減することができる。これによって、モジュール基板上の搭載部品の実装密度を向上させたり、モジュール自体を小型化することなどが可能になる。   On the other hand, as shown in FIG. 1, the resistance of the current detection resistor R2 (current detection resistor R1 in FIG. 2) is obtained by regarding the bonding wire (2) 3b as a resistance element and connecting it in series with the current detection resistor R2. The value can be reduced, and the mounting area can be reduced. As a result, it is possible to improve the mounting density of the mounted components on the module substrate and to reduce the size of the module itself.

ところで、図１に示した電流検出回路は、例えば、ＩＣレギュレータなどを含んだ電源モジュールの過電流保護回路などとして用いられる。その一例を図３に示す。図３は、本発明の一実施の形態の電子装置において、図１の電流検出回路を用いてバッテリ充電装置を形成した場合の構成の一例を示す図である。   Incidentally, the current detection circuit shown in FIG. 1 is used as, for example, an overcurrent protection circuit of a power supply module including an IC regulator or the like. An example is shown in FIG. FIG. 3 is a diagram illustrating an example of a configuration when a battery charging device is formed using the current detection circuit of FIG. 1 in the electronic device according to the embodiment of the present invention.

図３に示すバッテリ充電回路（電子装置）は、例えば、車両のバッテリの充電を制御する装置であって、発電部１０と、発電制御モジュール１１と、バッテリ１２などから構成される。発電部１０は、例えば、Ｙ接続された電磁子コイル１３と、界磁コイル１４と、整流器１５などを有している。   The battery charging circuit (electronic device) shown in FIG. 3 is, for example, a device that controls charging of a vehicle battery, and includes a power generation unit 10, a power generation control module 11, a battery 12, and the like. The power generation unit 10 includes, for example, a Y-connected electromagnetic coil 13, a field coil 14, a rectifier 15, and the like.

発電制御モジュール１１は、例えば、モジュール基板上に、２つの抵抗などから構成されるバッテリ電圧検出部１６と、ダイオード１７と、前記図１で説明したパワーＭＯＳトランジスタ２および電流検出抵抗Ｒ２ならびに制御ＩＣ１などが実装されている。このパワーＭＯＳトランジスタ２は上面に外部端子を有しており、ベアチップで実装される。そして、前記図１の場合と同様に、パワーＭＯＳトランジスタ２のソースＰＡＤと制御ＩＣ１の電流検出端子とがボンディングワイヤ（１）３ａによって接続され、パワーＭＯＳトランジスタ２のソースＰＡＤと電流検出抵抗Ｒ２とがボンディングワイヤ（２）３ｂによって接続されている。   The power generation control module 11 includes, for example, a battery voltage detection unit 16 composed of two resistors on the module substrate, a diode 17, the power MOS transistor 2 and the current detection resistor R2 described in FIG. Etc. are implemented. This power MOS transistor 2 has an external terminal on the upper surface, and is mounted by a bare chip. As in FIG. 1, the source PAD of the power MOS transistor 2 and the current detection terminal of the control IC 1 are connected by the bonding wire (1) 3a, and the source PAD of the power MOS transistor 2 and the current detection resistor R2 Are connected by a bonding wire (2) 3b.

制御ＩＣ１は、例えば、比較器２３などを含む電流検出部２０と、比較器２４と駆動回路２５などを含む電圧比較部２１と、スイッチ部２２などから構成される。   The control IC 1 includes, for example, a current detection unit 20 including a comparator 23 and the like, a voltage comparison unit 21 including a comparator 24 and a drive circuit 25, a switch unit 22, and the like.

つぎに、このバッテリ充電回路の動作について簡単に説明する。まず、電圧比較部２１が、バッテリ電圧検出部１６で検出されたバッテリ１２の電圧と基準電圧（１）とを比較し、その比較結果に応じたパルス幅を備えるパルスを、パワーＭＯＳトランジスタ２に対して出力する。パワーＭＯＳトランジスタ２は、前記パルスによってオンまたはオフとなり、オンとなった際には界磁コイル１４に界磁電流が流れる。電磁子コイル１３は、前記界磁電流に応じて発電を行い、発電した電圧は、整流器１５を介してバッテリ１２に充電される。   Next, the operation of this battery charging circuit will be briefly described. First, the voltage comparison unit 21 compares the voltage of the battery 12 detected by the battery voltage detection unit 16 with the reference voltage (1), and sends a pulse having a pulse width corresponding to the comparison result to the power MOS transistor 2. Output. The power MOS transistor 2 is turned on or off by the pulse, and when it is turned on, a field current flows through the field coil 14. The electromagnetic coil 13 generates power according to the field current, and the generated voltage is charged to the battery 12 via the rectifier 15.

ところで、例えば界磁コイル１４の送電ラインとバッテリ１２の送電ラインとがショートした場合などで、パワーＭＯＳトランジスタ２に過大な電流が流れることが考えられる。このような過大な電流が流れた場合は、その電流を、抵抗素子とみなしたボンディングワイヤ（２）３ｂと電流検出抵抗Ｒ２との直列抵抗によって電圧に変換し、その電圧を、配線とみなしたボンディングワイヤ（１）３ａによって制御ＩＣ１の電流検出端子に入力する。   By the way, for example, when the power transmission line of the field coil 14 and the power transmission line of the battery 12 are short-circuited, an excessive current may flow through the power MOS transistor 2. When such an excessive current flows, the current is converted into a voltage by the series resistance of the bonding wire (2) 3b regarded as a resistance element and the current detection resistor R2, and the voltage is regarded as a wiring. The current is input to the current detection terminal of the control IC 1 through the bonding wire (1) 3a.

電流検出端子に入力された電圧は、電流検出部２０で基準電圧（２）と比較され、それが基準電圧（２）よりも大きい場合、電流検出部２０はスイッチ部２２をコントロールし、パワーＭＯＳトランジスタ２をオフにする。これによって、過電流に対する保護が行われる。   The voltage input to the current detection terminal is compared with the reference voltage (2) by the current detection unit 20, and when it is greater than the reference voltage (2), the current detection unit 20 controls the switch unit 22 and the power MOS Transistor 2 is turned off. This provides protection against overcurrent.

ここで、ボンディングワイヤ（１）３ａは、電流検出部２０の比較器２３に接続されるため、その高入力抵抗により配線とみなすことができる。一方、ボンディングワイヤ（２）３ｂは、例えば、素材と長さと本数などを調整することによって、ある抵抗値を持つ抵抗素子として機能させることができる。その一例を、仮に電流検出抵抗として２０ｍΩを設定する場合を想定して説明する。   Here, since the bonding wire (1) 3a is connected to the comparator 23 of the current detection unit 20, it can be regarded as a wiring due to its high input resistance. On the other hand, the bonding wire (2) 3b can function as a resistance element having a certain resistance value, for example, by adjusting the material, the length, the number, and the like. One example will be described assuming that 20 mΩ is set as the current detection resistor.

まずは、従来技術において、電流検出抵抗として例えばＡｇ−Ｐｔを素材とした導体抵抗を用いる場合、Ａｇ−Ｐｔのシート抵抗値を仮に４ｍΩ／ｍｍ2とし、電流容量から導体抵抗の幅が１ｍｍ必要とすると、導体抵抗の長さは５ｍｍとなる。 First, in the prior art, when using a conductor resistance made of, for example, Ag-Pt as a current detection resistor, the sheet resistance value of Ag-Pt is assumed to be 4 mΩ / mm 2 and the width of the conductor resistance from the current capacity is 1 mm. Then, the length of the conductor resistance is 5 mm.

一方、図３のようにボンディングワイヤ（２）３ｂを抵抗素子とみなし、その素材をＡｕ（金）とし、ワイヤ径を２７μｍ、長さを３ｍｍとすると、Ａｕ線１本当たりの抵抗値は約０．１２Ωとなる。したがって、６本を並列接続で用いると２０ｍΩとなり、この場合、図３における電流検出抵抗Ｒ２は不要となる。   On the other hand, assuming that the bonding wire (2) 3b is a resistance element as shown in FIG. 3, the material is Au (gold), the wire diameter is 27 μm, and the length is 3 mm, the resistance value per Au wire is about 0.12Ω. Therefore, when 6 lines are used in parallel connection, the resistance is 20 mΩ. In this case, the current detection resistor R2 in FIG. 3 is not necessary.

但し、例えば、６本の並列接続では電流容量が不足し、１０本の並列接続が必要とされる場合、その１０本の並列接続によって１２ｍΩの抵抗値を得ることができる。そうすると、図３における電流検出抵抗Ｒ２には８ｍΩの抵抗値を備えればよいので、導体抵抗の長さを、従来技術における５ｍｍから２ｍｍ（５ｍｍ×８ｍΩ／２０ｍΩ）にすることができる。   However, for example, when six parallel connections have insufficient current capacity and ten parallel connections are required, a resistance value of 12 mΩ can be obtained by the ten parallel connections. Then, since it is sufficient that the current detection resistor R2 in FIG. 3 has a resistance value of 8 mΩ, the length of the conductor resistance can be changed from 5 mm to 2 mm (5 mm × 8 mΩ / 20 mΩ) in the prior art.

このように、ボンディングワイヤを抵抗素子とみなして用いることで、電流検出抵抗などといった抵抗素子の実装面積を低減することができる。なお、ボンディングワイヤは、インダクタンス成分を備えているが、このように高周波動作で用いないような場合だと特に問題にはならない。   Thus, by using the bonding wire as a resistance element, the mounting area of the resistance element such as a current detection resistor can be reduced. Although the bonding wire has an inductance component, there is no particular problem if it is not used in such a high frequency operation.

以上、本発明者によってなされた発明を実施の形態に基づき具体的に説明したが、本発明は前記実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能であることはいうまでもない。   As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

例えば、これまでの説明では、電源モジュールにおいてパワーＭＯＳトランジスタのソースＰＡＤからワイヤボンディングを行う例を示したが、パワーＭＯＳトランジスタをパワー系のバイポーラトランジスタや、ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）などに置き換えても同様に適用可能である。   For example, in the description so far, an example in which wire bonding is performed from the source PAD of the power MOS transistor in the power supply module has been shown. However, the power MOS transistor is replaced with a power bipolar transistor, IGBT (Insulated Gate Bipolar Transistor), or the like. Is equally applicable.

さらに、このような電源モジュールに限らず、例えば、ＳＩＰやハイブリッドＩＣなどでボンディングワイヤの一端に抵抗素子が接続されるような場合に、その抵抗素子の実装面積の低減手段として広く適用可能である。   Furthermore, the present invention is not limited to such a power supply module. For example, when a resistance element is connected to one end of a bonding wire using SIP or hybrid IC, it can be widely applied as means for reducing the mounting area of the resistance element. .

本発明の一実施の形態の電子装置において、抵抗素子とみなしたボンディングワイヤを電流検出回路に適用した場合の構成の一例を示す図である。It is a figure which shows an example of a structure at the time of applying the bonding wire regarded as a resistive element to a current detection circuit in the electronic device of one embodiment of this invention. 本発明の前提となる従来技術の電子装置において、ボンディングワイヤを用いた電流検出回路の構成の一例を示す図である。FIG. 3 is a diagram illustrating an example of a configuration of a current detection circuit using a bonding wire in a conventional electronic device that is a premise of the present invention. 本発明の一実施の形態の電子装置において、図１の電流検出回路を用いてバッテリ充電装置を形成した場合の構成の一例を示す図である。FIG. 2 is a diagram illustrating an example of a configuration when a battery charging device is formed using the current detection circuit of FIG. 1 in the electronic device according to the embodiment of the present invention.

符号の説明Explanation of symbols

１ 制御ＩＣ
２ パワーＭＯＳトランジスタ
３ａ，３ｂ，３ｃ ボンディングワイヤ
１０ 発電部
１１ 発電制御モジュール
１２ バッテリ
１３ 電磁子コイル
１４ 界磁コイル
１５ 整流器
１６ バッテリ電圧検出部
１７ ダイオード
２０ 電流検出部
２１ 電圧比較部
２２ スイッチ部
２３，２４ 比較器
２５ 駆動回路 1 Control IC
2 Power MOS transistors 3a, 3b, 3c Bonding wire 10 Power generation unit 11 Power generation control module 12 Battery 13 Electron coil 14 Field coil 15 Rectifier 16 Battery voltage detection unit 17 Diode 20 Current detection unit 21 Voltage comparison unit 22 Switch unit 23, 24 Comparator 25 Drive Circuit

Claims (5)

パワートランジスタと、電流を検出するためにその電流を電圧に変換する電流検出抵抗と、電圧を検出するための入力端子を備えた制御回路とを有する電子装置であって、
前記パワートランジスタの外部端子から前記制御回路の入力端子に接続された第１のボンディングワイヤと、
前記パワートランジスタの外部端子から前記電流検出抵抗に接続された第２のボンディングワイヤとを有することを特徴とする電子装置。 An electronic device having a power transistor, a current detection resistor for converting the current into a voltage to detect the current, and a control circuit having an input terminal for detecting the voltage,
A first bonding wire connected from an external terminal of the power transistor to an input terminal of the control circuit;
An electronic device comprising: a second bonding wire connected to the current detection resistor from an external terminal of the power transistor. パワートランジスタと、電圧を検出するための入力端子を備えた制御回路とを有する電子装置であって、
前記パワートランジスタの外部端子から前記制御回路の入力端子に接続された第１のボンディングワイヤと、
前記パワートランジスタの外部端子から接地電位に接続された第２のボンディングワイヤとを有することを特徴とする電子装置。 An electronic device having a power transistor and a control circuit having an input terminal for detecting a voltage,
A first bonding wire connected from an external terminal of the power transistor to an input terminal of the control circuit;
An electronic apparatus comprising: a second bonding wire connected to a ground potential from an external terminal of the power transistor. パワートランジスタと、電圧を検出するための入力端子を備えた制御回路とを有する電子装置であって、
前記パワートランジスタの外部端子から前記制御回路の入力端子に配線するための第１のボンディングワイヤと、
前記パワートランジスタに流れる電流を検出するため、その電流を電圧に変換する際の抵抗素子となる第２のボンディングワイヤとを有することを特徴とする電子装置。 An electronic device having a power transistor and a control circuit having an input terminal for detecting a voltage,
A first bonding wire for wiring from an external terminal of the power transistor to an input terminal of the control circuit;
An electronic device comprising: a second bonding wire serving as a resistance element when converting the current flowing through the power transistor into a voltage. 請求項１〜３のいずれか１項記載の電子装置において、
前記第２のボンディングワイヤは、複数本から構成され、その複数本による並列接続の抵抗素子として用いられることを特徴とする電子装置。 The electronic device according to any one of claims 1 to 3,
The electronic device is characterized in that the second bonding wire is composed of a plurality of wires and used as a resistance element connected in parallel by the plurality of wires. 請求項１〜４のいずれか１項記載の電子装置において、
前記第２のボンディングワイヤは、金を素材とし、１０ｍΩ〜２５ｍΩの抵抗素子として機能することを特徴とする電子装置。 The electronic device according to any one of claims 1 to 4,
The second bonding wire is made of gold, and functions as a resistance element of 10 mΩ to 25 mΩ.
JP2003361597A 2003-10-22 2003-10-22 Electronic device Pending JP2005129613A (en)

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