JP7088242B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP7088242B2 JP7088242B2 JP2020146702A JP2020146702A JP7088242B2 JP 7088242 B2 JP7088242 B2 JP 7088242B2 JP 2020146702 A JP2020146702 A JP 2020146702A JP 2020146702 A JP2020146702 A JP 2020146702A JP 7088242 B2 JP7088242 B2 JP 7088242B2
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- 239000004065 semiconductor Substances 0.000 title claims description 125
- 238000000034 method Methods 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000011810 insulating material Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000002788 crimping Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 or the like Substances 0.000 description 1
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- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
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- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
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- Wire Bonding (AREA)
Description
(I)キャリア上に複数の第1の半導体素子(チップ)を搭載する工程と、
(II)前記第1の半導体素子を絶縁材料で一括封止して、封止体を形成する工程と、
(III)前記キャリアを剥離して、前記第1の半導体素子の電極を露出させる工程と、
(IV)前記複数の第1の半導体素子の2以上の第1の半導体素子を跨るように、第2の半導体素子を、フリップチップ接続により搭載する工程と、
を備える半導体装置の製造方法である。
より効率的に半導体パッケージを製造するためには、個片化した半導体素子4と、パネル又はウェハ状態の半導体素子封止パッケージ100を150℃以下で仮圧着した後、リフロー工程によって金属接続させることが最も好ましい。
具体的には、半導体素子2の電極(図示せず)に、はんだボール等の電気接続のための金属接続部材9を搭載し(図6)、個片化する(図示せず)。金属接続部材9の搭載は市販のN2リフロー装置等を用いて容易に行うことができる。
Claims (7)
- (I)キャリア上に複数の第1の半導体素子を搭載する工程と、
(II)前記第1の半導体素子を絶縁材料で一括封止して、封止体を形成する工程と、
(III)前記キャリアを剥離して、前記第1の半導体素子の電極を露出させる工程と、
(IV)前記複数の第1の半導体素子の2以上の第1の半導体素子を跨るように、第2の半導体素子をフリップチップ接続により搭載する工程と、
を備え、
前記第2の半導体素子が、アンダーフィル付チップであり、前記第2の半導体素子のアンダーフィルが前記第1の半導体素子と接する半導体装置の製造方法。 - 前記絶縁材料が、フィルム状の材料又はシート状の材料である請求項1記載の半導体装置の製造方法。
- さらに、(V)前記第1の半導体素子の、前記第2の半導体素子に対向する側の面に、金属接続部材を形成する工程と、
を備え、
前記(IV)工程の後、前記(V)工程を行う請求項1又は2に記載の半導体装置の製造方法。 - 前記アンダーフィルが、フィルム状の材料又はシート状の材料である請求項1~3のいずれか一項に記載の半導体装置の製造方法。
- 前記アンダーフィルが、感光性材料である請求項1~4のいずれか一項に記載の半導体装置の製造方法。
- 前記(II)工程後であって前記(III)工程前に、(II-1)前記封止体を薄化する工程を備える請求項1~5のいずれか一項に記載の半導体装置の製造方法。
- 請求項1~6のいずれか一項に記載の製造方法を用いて製造された半導体装置。
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JP2020198451A JP2020198451A (ja) | 2020-12-10 |
JP2020198451A5 JP2020198451A5 (ja) | 2021-05-06 |
JP7088242B2 true JP7088242B2 (ja) | 2022-06-21 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003060156A (ja) | 2001-06-15 | 2003-02-28 | Tobu Denshi Kk | 半導体パッケージ及びその製造方法 |
JP2008177364A (ja) | 2007-01-18 | 2008-07-31 | Denso Corp | 半導体装置の製造方法及び半導体装置 |
JP2012169440A (ja) | 2011-02-14 | 2012-09-06 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
US20130001770A1 (en) | 2011-06-29 | 2013-01-03 | Yong Liu | Wafer level embedded and stacked die power system-in-package packages |
JP2014526139A (ja) | 2011-06-30 | 2014-10-02 | ムラタ エレクトロニクス オサケユキチュア | システムインパッケージデバイスを製造する方法、および、システムインパッケージデバイス |
JP2015031724A (ja) | 2013-07-31 | 2015-02-16 | 日立化成株式会社 | 半導体装置の製造方法及びその製造方法によって得られる半導体装置 |
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2020
- 2020-09-01 JP JP2020146702A patent/JP7088242B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003060156A (ja) | 2001-06-15 | 2003-02-28 | Tobu Denshi Kk | 半導体パッケージ及びその製造方法 |
JP2008177364A (ja) | 2007-01-18 | 2008-07-31 | Denso Corp | 半導体装置の製造方法及び半導体装置 |
JP2012169440A (ja) | 2011-02-14 | 2012-09-06 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
US20130001770A1 (en) | 2011-06-29 | 2013-01-03 | Yong Liu | Wafer level embedded and stacked die power system-in-package packages |
JP2014526139A (ja) | 2011-06-30 | 2014-10-02 | ムラタ エレクトロニクス オサケユキチュア | システムインパッケージデバイスを製造する方法、および、システムインパッケージデバイス |
JP2015031724A (ja) | 2013-07-31 | 2015-02-16 | 日立化成株式会社 | 半導体装置の製造方法及びその製造方法によって得られる半導体装置 |
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