JP7084989B2 - ルテニウムで被包された光電陰極電子放出器 - Google Patents

ルテニウムで被包された光電陰極電子放出器 Download PDF

Info

Publication number
JP7084989B2
JP7084989B2 JP2020520025A JP2020520025A JP7084989B2 JP 7084989 B2 JP7084989 B2 JP 7084989B2 JP 2020520025 A JP2020520025 A JP 2020520025A JP 2020520025 A JP2020520025 A JP 2020520025A JP 7084989 B2 JP7084989 B2 JP 7084989B2
Authority
JP
Japan
Prior art keywords
electron emitter
protective film
photocathode
electron
photocathode structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020520025A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020537295A (ja
JP2020537295A5 (OSRAM
Inventor
ギルダルド デルガド
ルディ ガルシア
カテリナ イオーケイミディ
フランシス ヒル
マイケル イー ロメロ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2020537295A publication Critical patent/JP2020537295A/ja
Publication of JP2020537295A5 publication Critical patent/JP2020537295A5/ja
Application granted granted Critical
Publication of JP7084989B2 publication Critical patent/JP7084989B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/02—Electron-emitting electrodes; Cathodes
    • H01J19/24—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/02—Details
    • H01J40/04—Electrodes
    • H01J40/06—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/16—Photoelectric discharge tubes not involving the ionisation of a gas having photo- emissive cathode, e.g. alkaline photoelectric cell
    • H01J40/18—Photoelectric discharge tubes not involving the ionisation of a gas having photo- emissive cathode, e.g. alkaline photoelectric cell with luminescent coatings for influencing the sensitivity of the tube, e.g. by converting the input wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30407—Microengineered point emitters
    • H01J2201/30411—Microengineered point emitters conical shaped, e.g. Spindt type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30449—Metals and metal alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/3048—Semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/308—Semiconductor cathodes, e.g. having PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3425—Metals, metal alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3426—Alkaline metal compounds, e.g. Na-K-Sb
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06333—Photo emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24521—Beam diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2020520025A 2017-10-10 2018-10-10 ルテニウムで被包された光電陰極電子放出器 Active JP7084989B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762570438P 2017-10-10 2017-10-10
US62/570,438 2017-10-10
US16/150,675 2018-10-03
US16/150,675 US10395884B2 (en) 2017-10-10 2018-10-03 Ruthenium encapsulated photocathode electron emitter
PCT/US2018/055287 WO2019075116A1 (en) 2017-10-10 2018-10-10 PHOTOCATHODE ELECTRON EMITTER ENCAPSULATED IN RUTHENIUM

Publications (3)

Publication Number Publication Date
JP2020537295A JP2020537295A (ja) 2020-12-17
JP2020537295A5 JP2020537295A5 (OSRAM) 2021-11-18
JP7084989B2 true JP7084989B2 (ja) 2022-06-15

Family

ID=75984106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020520025A Active JP7084989B2 (ja) 2017-10-10 2018-10-10 ルテニウムで被包された光電陰極電子放出器

Country Status (4)

Country Link
US (1) US10395884B2 (OSRAM)
EP (1) EP3695431B1 (OSRAM)
JP (1) JP7084989B2 (OSRAM)
WO (1) WO2019075116A1 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10714294B2 (en) 2018-05-25 2020-07-14 Kla-Tencor Corporation Metal protective layer for electron emitters with a diffusion barrier
US10714295B2 (en) * 2018-09-18 2020-07-14 Kla-Tencor Corporation Metal encapsulated photocathode electron emitter
US11495428B2 (en) 2019-02-17 2022-11-08 Kla Corporation Plasmonic photocathode emitters at ultraviolet and visible wavelengths
US11217416B2 (en) * 2019-09-27 2022-01-04 Kla Corporation Plasmonic photocathode emitters

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040051046A1 (en) 2002-06-06 2004-03-18 The Regents Of The University Of California Highly sensitive imaging camera for space applications including detection of ultrahigh energy cosmic rays
US20140034816A1 (en) 2012-08-03 2014-02-06 Kla-Tencor Corporation Photocathode Including Silicon Substrate With Boron Layer
JP2014235816A (ja) 2013-05-31 2014-12-15 独立行政法人物質・材料研究機構 フォトカソード型電子線源、その作成方法及びフォトカソード型電子線源システム
JP2015038892A (ja) 2007-02-22 2015-02-26 アプライド マテリアルズ イスラエル リミテッド 高スループットｓｅｍツール
JP2020515019A (ja) 2016-12-20 2020-05-21 ケーエルエー コーポレイション ルテニウム被覆を有する電子ビーム放出器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121233A (ja) * 1984-11-16 1986-06-09 Hitachi Ltd 含浸形陰極の製造方法
US5363021A (en) 1993-07-12 1994-11-08 Cornell Research Foundation, Inc. Massively parallel array cathode
JPH0936025A (ja) * 1995-07-14 1997-02-07 Nec Corp 電子ビーム露光法及び装置
US7015467B2 (en) 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode
CN1518049A (zh) * 2003-01-28 2004-08-04 ������������ʽ���� 电子显微镜
US7074719B2 (en) 2003-11-28 2006-07-11 International Business Machines Corporation ALD deposition of ruthenium
KR101159074B1 (ko) * 2006-01-14 2012-06-25 삼성전자주식회사 도전성 탄소나노튜브 팁, 이를 구비한 스캐닝 프로브마이크로스코프의 탐침 및 상기 도전성 탄소나노튜브 팁의제조 방법
CN101105488B (zh) 2006-07-14 2011-01-26 鸿富锦精密工业（深圳）有限公司 逸出功的测量方法
JP5390846B2 (ja) 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
US8664853B1 (en) * 2012-06-13 2014-03-04 Calabazas Creek Research, Inc. Sintered wire cesium dispenser photocathode
US9984846B2 (en) 2016-06-30 2018-05-29 Kla-Tencor Corporation High brightness boron-containing electron beam emitters for use in a vacuum environment
US20180191265A1 (en) * 2016-12-30 2018-07-05 John Bennett Photo-electric switch system and method
CN106842729B (zh) * 2017-04-10 2019-08-20 深圳市华星光电技术有限公司 石墨烯电极制备方法及液晶显示面板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040051046A1 (en) 2002-06-06 2004-03-18 The Regents Of The University Of California Highly sensitive imaging camera for space applications including detection of ultrahigh energy cosmic rays
JP2015038892A (ja) 2007-02-22 2015-02-26 アプライド マテリアルズ イスラエル リミテッド 高スループットｓｅｍツール
US20140034816A1 (en) 2012-08-03 2014-02-06 Kla-Tencor Corporation Photocathode Including Silicon Substrate With Boron Layer
JP2015536012A (ja) 2012-08-03 2015-12-17 ケーエルエー−テンカー コーポレイション ホウ素層を有するシリコン基板を含むフォトカソード
JP2014235816A (ja) 2013-05-31 2014-12-15 独立行政法人物質・材料研究機構 フォトカソード型電子線源、その作成方法及びフォトカソード型電子線源システム
JP2020515019A (ja) 2016-12-20 2020-05-21 ケーエルエー コーポレイション ルテニウム被覆を有する電子ビーム放出器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FENG,Zhu et al.，Surface Modification to a-SiC Photocathode Using Ruthenium Nanoparticles，Material Research Society Symposium Proceedings，2013年，Vol.1539

Also Published As

Publication number Publication date
EP3695431B1 (en) 2024-08-28
EP3695431A4 (en) 2021-08-11
JP2020537295A (ja) 2020-12-17
US20190108966A1 (en) 2019-04-11
EP3695431A1 (en) 2020-08-19
US10395884B2 (en) 2019-08-27
WO2019075116A1 (en) 2019-04-18

Similar Documents

Publication Publication Date Title
EP3695431B1 (en) Ruthenium encapsulated photocathode electron emitter
KR102615663B1 (ko) 자외선 및 가시광선 파장의 플라즈몬 포토캐소드 이미터
JP7082660B2 (ja) 光電陰極設計、および光電陰極を使用して電子ビームを生成する方法
JP7185772B2 (ja) 金属封入光電陰極電子エミッタ
CN102939567B (zh) 光学系统
JP2020537287A (ja) 電子ビーム生成および測定
JP5269074B2 (ja) リソグラフィ露光装置用の炭化水素ゲッター
KR102662487B1 (ko) 플라즈몬 포토캐소드 이미터

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211006

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211006

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20211006

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20211227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220111

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220406

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220510

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220603

R150 Certificate of patent or registration of utility model

Ref document number: 7084989

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250