JP7026942B2 - Underlay for polishing pad and polishing method using the underlay - Google Patents

Underlay for polishing pad and polishing method using the underlay Download PDF

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JP7026942B2
JP7026942B2 JP2018085015A JP2018085015A JP7026942B2 JP 7026942 B2 JP7026942 B2 JP 7026942B2 JP 2018085015 A JP2018085015 A JP 2018085015A JP 2018085015 A JP2018085015 A JP 2018085015A JP 7026942 B2 JP7026942 B2 JP 7026942B2
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polishing
underlay
polishing pad
groove
surface plate
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JP2019188547A (en
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利康 矢島
大輔 二宮
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Maruishi Sangyo Co Ltd
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Maruishi Sangyo Co Ltd
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Priority to JP2018085015A priority Critical patent/JP7026942B2/en
Priority to TW108113813A priority patent/TW201945120A/en
Priority to CN201980019602.2A priority patent/CN111867781B/en
Priority to KR1020207027228A priority patent/KR102629759B1/en
Priority to PCT/JP2019/017335 priority patent/WO2019208605A1/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/12Lapping plates for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment

Description

本発明は、半導体部品、電子部品等の研磨作業で使用される研磨パッドに用いられる補助部材に関する。詳しくは、所定の吸着層を備える研磨パッドを定盤に固定する際に、定盤と研磨パッドとの間に設置される新規な補助部材である研磨パッド用の下敷に関する。 The present invention relates to an auxiliary member used for a polishing pad used in polishing work of semiconductor parts, electronic parts and the like. More specifically, the present invention relates to an underlay for a polishing pad, which is a new auxiliary member installed between the surface plate and the polishing pad when the polishing pad having a predetermined adsorption layer is fixed to the surface plate.

半導体ウエハ、ディスプレイ用ガラス基板、ハードディスク用基板といった半導体部品、電子部品の製造プロセスにおいては、基板等の表面の平坦化や鏡面化のための研磨工程が含まれる。研磨工程は、研磨パッドを研磨装置の定盤に固定し、研磨パッドの研磨層表面に研磨スラリーを供給しながら、加圧状態で被研磨部材と研磨パッドと摺動させることによって行われる。 In the manufacturing process of semiconductor parts such as semiconductor wafers, glass substrates for displays, and substrates for hard disks, and electronic parts, a polishing step for flattening or mirroring the surface of the substrate or the like is included. The polishing step is performed by fixing the polishing pad to the surface plate of the polishing device and sliding the member to be polished and the polishing pad in a pressurized state while supplying the polishing slurry to the surface of the polishing layer of the polishing pad.

研磨パッドの定盤への固定方法としては、かつては粘着テープ等の粘着材による方法が主流であったが、この方法には研磨パッドの交換・固定作業に手間がかかり、研磨工程の作業効率を大きく低下させていた。この研磨パッドの固定の問題に対して、固定・交換作業を容易に行うことのできる研磨パッドを開発している(特許文献1、2)。 In the past, the mainstream method for fixing the polishing pad to the surface plate was to use an adhesive material such as adhesive tape, but this method requires time and effort to replace and fix the polishing pad, and the work efficiency of the polishing process is high. Was greatly reduced. To solve this problem of fixing the polishing pad, we have developed a polishing pad that can be easily fixed and replaced (Patent Documents 1 and 2).

実用新案登録第3166396号明細書Utility Model Registration No. 3166396 特許第5765858号明細書Japanese Patent No. 5765858

かかる吸着層を備える研磨パッドの外観を図4に示す。この研磨パッドは、研磨層を支持する基材の裏面側に、吸着作用を有する所定のシリコーン化合物からなる吸着層を設けたものである。この吸着層を構成するシリコーン化合物は、ガラスや金属等の材質を問わずに吸着作用を有し、その保持力も良好である。この吸着による保持力については、剪断力(水平方向の固定強度)が高い一方で、剥離力(垂直方向の固定強度)は低いという特性がみられる。この特性は、研磨パッドを定盤へ固定する上で好適である。研磨作業においては、研磨パッドは水平方向の応力を継続的に受けるので、剪断力において高い保持力が必要だからである。垂直方向の保持力に関しては、研磨パッドは定盤に押圧されているので大きな保持力は必ずしも要求されない。そして、このシリコーン化合物からなる吸着層の吸着効果は研磨パッドの面内で均一であり、中心部から端部にわたって均等な保持力を発揮することができる。よって、安定的な研磨作業が期待できる。 FIG. 4 shows the appearance of the polishing pad provided with such an adsorption layer. This polishing pad is provided with an adsorption layer made of a predetermined silicone compound having an adsorption action on the back surface side of the base material that supports the polishing layer. The silicone compound constituting this adsorption layer has an adsorption action regardless of the material such as glass or metal, and its holding power is also good. Regarding the holding force due to this adsorption, there is a characteristic that the shearing force (fixing strength in the horizontal direction) is high, while the peeling force (fixing strength in the vertical direction) is low. This property is suitable for fixing the polishing pad to the surface plate. This is because in the polishing work, the polishing pad is continuously subjected to the stress in the horizontal direction, so that a high holding force is required in the shearing force. Regarding the holding force in the vertical direction, since the polishing pad is pressed against the surface plate, a large holding force is not always required. The adsorption effect of the adsorption layer made of this silicone compound is uniform in the surface of the polishing pad, and a uniform holding force can be exhibited from the central portion to the end portion. Therefore, stable polishing work can be expected.

また、この研磨パッドは、定盤への固定をスムーズに行うことができ、交換作業を効率的に行うことができるという利点もある。上記のように、研磨パッドの吸着層は、剪断力に比して剥離力が低いことから、研磨パッドを定盤に垂直方向に軽く押圧するだけで固定でき、脱着も容易だからである。従って、本願出願人による研磨パッドは、研磨作業の効率化の観点からも有用である。 Further, this polishing pad has an advantage that it can be smoothly fixed to the surface plate and the replacement work can be efficiently performed. As described above, since the adsorption layer of the polishing pad has a lower peeling force than the shearing force, the polishing pad can be fixed by lightly pressing the polishing pad in the vertical direction on the surface plate, and can be easily attached and detached. Therefore, the polishing pad by the applicant of the present application is also useful from the viewpoint of improving the efficiency of the polishing work.

上述のように、本願出願人による所定の吸着層を備える研磨パッドは、交換作業に伴う利便性が良好であると共に、定盤への固定能力にも優れている。しかし、本発明者等の検討によると、かかる有用な研磨パッドを使用した場合であっても、稀にではあるが、研磨作業の進行によって、研磨パッドのズレや部分的な剥離が生じることがあることが確認されている。 As described above, the polishing pad provided with the predetermined adsorption layer by the applicant of the present application has good convenience in the replacement work and also has excellent fixing ability to the surface plate. However, according to the study by the present inventors, even when such a useful polishing pad is used, although rarely, the polishing pad may be displaced or partially peeled off due to the progress of the polishing work. It has been confirmed that there is.

この場合に生じる研磨パッドのズレや剥離は、必ずしも研磨時間の長短や研磨パッドの交換頻度による吸着層の劣化によるものではない。また、常に生じる不具合というわけでもなく、殆どの研磨環境や条件においては問題なく研磨作業を行うことができる。但し、この研磨パッドをこれまで以上に普及させるためには、僅かな可能性であっても剥離等の不具合を解消させることが好ましい。 The deviation or peeling of the polishing pad that occurs in this case is not necessarily due to deterioration of the adsorption layer due to the length of the polishing time or the frequency of replacement of the polishing pad. In addition, it is not a problem that always occurs, and the polishing work can be performed without any problem in most polishing environments and conditions. However, in order to make this polishing pad more popular than ever, it is preferable to eliminate problems such as peeling even if there is a slight possibility.

本発明は、以上のような背景のもとになされたものであり、所定のシリコーン組成物からなる吸着層を有する研磨パッドを利用する研磨方法について、定盤からのズレや剥離等を抑制するための手法を提供する。具体的には、吸着層を有する研磨パッドに対して有用な補助部材と、これを利用した研磨方法について開示する。 The present invention has been made based on the above background, and in a polishing method using a polishing pad having an adsorption layer made of a predetermined silicone composition, deviation from the surface plate, peeling, etc. are suppressed. Provides a method for. Specifically, an auxiliary member useful for a polishing pad having an adsorption layer and a polishing method using the auxiliary member will be disclosed.

本発明者等は上記目的のため、所定の吸着層を備える研磨パッド関して、研磨作業中に定盤から剥離等する要因について検討することとした。その結果、研磨パッドの吸着層と定盤との界面に研磨スラリーが侵入することがあり、これが剥離等を引き起こす可能性があると考察した。研磨スラリーは、溶媒に、コロイダルシリカ、アルミナ、セリア、ダイヤモンド等からなる研磨砥粒を分散させたものを基本構成とする懸濁液である。本発明者等は、検討の結果、研磨スラリーの構成・成分によっては、研磨パッドと定盤との界面への侵入性が増大することがあるとの考察をしている。特に、成分調整によって粘性が低い研磨スラリーにおいて、界面への侵入性が高くなると考えた。 For the above purpose, the present inventors have decided to investigate factors such as peeling from the surface plate during polishing work with respect to a polishing pad provided with a predetermined adsorption layer. As a result, it was considered that the polishing slurry may invade the interface between the adsorption layer of the polishing pad and the surface plate, which may cause peeling or the like. The polishing slurry is a suspension having a basic composition in which polishing abrasive grains made of colloidal silica, alumina, ceria, diamond, etc. are dispersed in a solvent. As a result of the study, the present inventors have considered that the penetration into the interface between the polishing pad and the surface plate may increase depending on the composition and composition of the polishing slurry. In particular, it was considered that the penetration into the interface would be improved in the polishing slurry having low viscosity by adjusting the components.

粘性が低い研磨スラリーは、研磨パッドと定盤との間の微細な隙間による毛細管現象の影響も相俟って、界面に比較的容易に侵入する。そして、界面にスラリーが蓄積した状態は、シリコーン組成物からなる吸着層にとって好ましくない状態であり、吸着力が低下することとなる。この吸着力低下によって、研磨パッドの定盤からの剥離やズレが生じることとなる。 The low-viscosity polishing slurry penetrates the interface relatively easily due to the influence of the capillary phenomenon due to the minute gap between the polishing pad and the surface plate. The state in which the slurry is accumulated at the interface is not preferable for the adsorption layer made of the silicone composition, and the adsorption force is lowered. Due to this decrease in suction force, the polishing pad may be peeled off or displaced from the surface plate.

但し、研磨パッドの吸着層の能力低下の要因が研磨スラリーにあるとしても、その成分・構成を安易に変更することは難しい。研磨スラリーを構成する研磨砥粒や溶媒等の成分・構成は、被研磨部材の材質や要求される研磨精度等に基づいて最適化されるのが一般的である。研磨スラリーが特定の研磨パッドに影響を及ぼすことが懸念されるからといって、研磨精度等に影響を与えるような変更を加えることは容易に許容できない。 However, even if the polishing slurry is the cause of the decrease in the capacity of the adsorption layer of the polishing pad, it is difficult to easily change its composition and composition. The components and configurations of the polishing abrasive grains, the solvent, and the like that make up the polishing slurry are generally optimized based on the material of the member to be polished, the required polishing accuracy, and the like. Even if there is a concern that the polishing slurry may affect a specific polishing pad, it is not easily acceptable to make changes that affect the polishing accuracy or the like.

また、研磨パッド側の改良に関しても限界があると思われる。特に、上述した吸着層の組成や構造に関して、その利点を維持しつつ、特定の研磨スラリーに対する耐性を強化することは不可能に近いといえる。 In addition, there seems to be a limit to the improvement on the polishing pad side. In particular, it can be said that it is almost impossible to enhance the resistance to a specific polishing slurry while maintaining the advantages of the composition and structure of the adsorption layer described above.

そこで、本発明者等は、従来の吸着層を備える研磨パッドをそのまま使用しながら、定盤に対する固定状態を調整することができる補助部材を適用することについて検討を行った。そして、研磨パッドの下に設置する薄板状の下敷であって、研磨パッド表面から浸出する研磨スラリーを捕捉し放出するための溝を備えるものに想到した。 Therefore, the present inventors have studied the application of an auxiliary member capable of adjusting the fixed state to the surface plate while using the conventional polishing pad provided with the adsorption layer as it is. Then, he came up with a thin plate-shaped underlay to be installed under the polishing pad, which is provided with a groove for capturing and discharging the polishing slurry leaching from the surface of the polishing pad.

即ち、本発明は、研磨パッドを定盤に固定する際、前記研磨パッドと前記定盤との間に設置される薄板状の下敷であって、前記研磨パッドと接する面上に、下敷の外縁に沿った環状溝が少なくとも1本形成されており、更に、最外縁側に形成された前記環状溝から下敷の外縁方向に延び、外縁端部で開口を有する排出溝が少なくとも1本形成された、研磨パッド用の下敷である。 That is, the present invention is a thin plate-shaped underlay installed between the polishing pad and the surface plate when the polishing pad is fixed to the surface plate, and the outer edge of the underlay is placed on the surface in contact with the polishing pad. At least one annular groove is formed along the outer edge, and at least one discharge groove extending from the annular groove formed on the outermost edge side toward the outer edge of the underlay and having an opening at the outer edge end is formed. , An underlay for polishing pads.

図1は、本発明に係る研磨パッド用の下敷の具体例の外観を示す図である。図1で例示する研磨パッド用の下敷は、円板形状の薄板であって、その外周に沿って円環状の環状溝が形成されている。図1の例では、同心円状の2本の環状溝が形成されている。そして、最外縁側の環状溝については、下敷の外縁に向かう溝であって、開口を有する排出溝が形成されている。 FIG. 1 is a diagram showing the appearance of a specific example of an underlay for a polishing pad according to the present invention. The underlay for the polishing pad illustrated in FIG. 1 is a disk-shaped thin plate, and an annular groove is formed along the outer periphery thereof. In the example of FIG. 1, two concentric annular grooves are formed. The annular groove on the outermost edge side is a groove toward the outer edge of the underlay, and a discharge groove having an opening is formed.

そして、図2は、図1で例示した本発明に係る研磨パッド用の下敷を適用し、研磨パッドを定盤に固定したときの状態を説明するものである。本発明に係る下敷を設置するとき、下敷は定盤に隙間のない状態で密着させる。一方、研磨パッドを下敷に密着させたとき、両者の界面には環状溝による隙間が生じる。このようにして下敷を介して研磨パッドを定盤に固定した状態で、研磨パッド表面に研磨スラリーを供給しつつ、研磨パッドを回転して研磨作業を行う。 Then, FIG. 2 illustrates a state when the underlay for the polishing pad according to the present invention exemplified in FIG. 1 is applied and the polishing pad is fixed to the surface plate. When installing the underlay according to the present invention, the underlay is brought into close contact with the surface plate without any gaps. On the other hand, when the polishing pad is brought into close contact with the underlay, a gap is formed at the interface between the two due to the annular groove. In this way, with the polishing pad fixed to the surface plate via the underlay, the polishing slurry is supplied to the surface of the polishing pad, and the polishing pad is rotated to perform the polishing work.

図2で示すように、研磨作業中、研磨スラリーは遠心力により研磨パッドの側面に達し、次第に吸着層と下敷との界面に浸透する。本発明では、まず、この界面に浸透する研磨スラリーが環状溝に貯留される。これにより、研磨スラリーが吸着層界面で全面的に広がることが抑制され、研磨スラリーの影響は局所的なものとなる。そして、環状溝が貯留した研磨スラリーは、研磨パッドの回転によって排出溝を経由して外部に放出される。以上のプロセスにより、研磨パッドの縁付近での密着状態は維持されるので、そこから発生し易いズレや剥離を抑制することができる。 As shown in FIG. 2, during the polishing operation, the polishing slurry reaches the side surface of the polishing pad by centrifugal force and gradually permeates the interface between the adsorption layer and the underlay. In the present invention, first, the polishing slurry that permeates this interface is stored in the annular groove. As a result, the polishing slurry is suppressed from spreading over the entire surface at the interface of the adsorption layer, and the influence of the polishing slurry becomes local. Then, the polishing slurry in which the annular groove is stored is discharged to the outside via the discharge groove by the rotation of the polishing pad. By the above process, the close contact state near the edge of the polishing pad is maintained, so that it is possible to suppress the deviation and peeling that are likely to occur from there.

次に、上記のような作用を有する本発明に係る研磨パッド用下敷の構成について、より詳細に説明する。 Next, the configuration of the underlay for the polishing pad according to the present invention having the above-mentioned action will be described in more detail.

本発明に係る研磨パッド用下敷の全体の形状及び寸法は、適用される研磨パッドと略同じとする。通常、研磨パッドは円形のものが一般的であるので、下敷も円板状とすることが多い。下敷の厚さについては、特に制限はないが、過度に厚くする必要はない。下敷の厚さは、150μm~1000μm程度の薄板とするのが好ましく、150μm~500μmとするのがより好ましい。 The overall shape and dimensions of the polishing pad underlay according to the present invention are substantially the same as the applied polishing pad. Generally, the polishing pad is circular, so the underlay is often disk-shaped. The thickness of the underlay is not particularly limited, but it does not need to be excessively thick. The thickness of the underlay is preferably a thin plate of about 150 μm to 1000 μm, and more preferably 150 μm to 500 μm.

下敷の構成材料は、素材コストや強度に加えて、研磨スラリーに対する化学的安定性を考慮し各種の樹脂材料が適用される。具体的には、ポリエステル、ポリエチレン、ポリスチレン、ポリプロピレン、ナイロン、ウレタン、ポリ塩化ビニリデン、ポリ塩化ビニル等の樹脂である。好ましくは、ポリエステル系樹脂材料であり、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)であり、特に好ましいのはPETである。 As the constituent material of the underlay, various resin materials are applied in consideration of chemical stability to the polishing slurry in addition to the material cost and strength. Specifically, it is a resin such as polyester, polyethylene, polystyrene, polypropylene, nylon, urethane, polyvinylidene chloride, and polyvinyl chloride. A polyester-based resin material is preferable, polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are preferable, and PET is particularly preferable.

そして、上記のとおり、本発明に係る研磨パッド用下敷の特徴は、研磨スラリーを貯留し放出するための環状溝が形成されている点にある。環状溝は、下敷の外縁に沿った円環形状の溝である。環状溝は、下敷の外縁端部から中心方向に向かって少し離れた位置に少なくとも1本形成される。環状溝は、1本又は2本以上形成され、1本~4本形成されるのが好ましい。 As described above, the feature of the underlay for the polishing pad according to the present invention is that an annular groove for storing and discharging the polishing slurry is formed. The annular groove is an annular groove along the outer edge of the underlay. At least one annular groove is formed at a position slightly distant from the outer edge of the underlay toward the center. One or two or more annular grooves are formed, and one to four annular grooves are preferably formed.

また、下敷には、環状溝に貯留された研磨スラリーを外部へ放出するため、環状溝から下敷の外縁方向に延伸する排出溝が形成される。排水溝は、下敷の外縁端部で開口を有し、ここから研磨スラリーを放出する。排水溝は直線状であっても良いし、曲線状であっても良い。排水溝は、少なくとも1本形成されるが、複数形成するのが好ましい。排水溝は、2~8本形成するのが好ましく、等間隔で形成するのが好ましい。 Further, in order to discharge the polishing slurry stored in the annular groove to the outside, a discharge groove extending from the annular groove toward the outer edge of the underlay is formed in the underlay. The drainage ditch has an opening at the outer edge of the underlay, from which the polishing slurry is discharged. The drainage ditch may be linear or curved. At least one drainage ditch is formed, but it is preferable to form a plurality of drainage ditches. It is preferable to form 2 to 8 drainage ditches, and it is preferable to form them at equal intervals.

更に、環状溝が2本以上形成される場合、最外縁側にある環状溝以外の環状溝から研磨スラリーを効果的に排出するため、隣接する環状溝同士を連通する連通溝が形成されていることが好ましい。この連通溝は、隣接する環状溝の組み合わせ毎に少なくとも1本形成されることが好ましい。連通溝も直線状であっても良いし、曲線状であっても良い。また、排出溝と同様、2~8本形成するのが好ましく、等間隔で形成するのが好ましい。 Further, when two or more annular grooves are formed, a communication groove that communicates the adjacent annular grooves is formed in order to effectively discharge the polishing slurry from the annular grooves other than the annular groove on the outermost edge side. Is preferable. It is preferable that at least one communication groove is formed for each combination of adjacent annular grooves. The communication groove may also be linear or curved. Further, like the discharge grooves, it is preferable to form 2 to 8 grooves, and it is preferable to form them at equal intervals.

環状溝を形成する位置に関しては、特に制限されることはない。好ましくは、最外縁側に位置する環状溝は、下敷の外縁から5mm以上離隔して形成されていることが好ましい。この間隔が過度に大きいと、研磨スラリーが環状溝に到達する前に、下敷と研磨パッドとの界面に留まる可能性があるからである。また、2本以上の環状溝が形成されており、隣接する環状溝の間隔を1.5mm以上15mm以下とするのが好ましい。より好ましくは、1.5mm以上5mm以下の間隔を設定する。2本以上の環状溝を形成する場合、等間隔で同心円状に形成することが好ましい。尚、上記で説明する溝の位置は、溝幅の中心線を基準とずる。 The position of forming the annular groove is not particularly limited. Preferably, the annular groove located on the outermost edge side is formed at a distance of 5 mm or more from the outer edge of the underlay. This is because if this interval is excessively large, the polishing slurry may stay at the interface between the underlay and the polishing pad before reaching the annular groove. Further, two or more annular grooves are formed, and it is preferable that the distance between the adjacent annular grooves is 1.5 mm or more and 15 mm or less. More preferably, the interval is set to 1.5 mm or more and 5 mm or less. When forming two or more annular grooves, it is preferable to form them concentrically at equal intervals. The position of the groove described above is shifted with reference to the center line of the groove width.

溝の深さ(高さ)は、下敷の厚さに対して20%以上80%以下の範囲内とすることが好ましい。また、溝の幅は、2mm以上10mm以下の範囲内とすることが好ましい。これらの溝の寸法は、研磨スラリーを好適に貯留・放出することを考慮して設定される。尚、本発明の下敷には、環状溝、排出溝、連通溝の3態様の溝が形成されるが、いずれも上記範囲内にあることが好ましい。また、これらの溝の深さは同じくすることが好ましい。 The depth (height) of the groove is preferably in the range of 20% or more and 80% or less with respect to the thickness of the underlay. The width of the groove is preferably in the range of 2 mm or more and 10 mm or less. The dimensions of these grooves are set in consideration of suitable storage and discharge of the polishing slurry. The underlay of the present invention is formed with three types of grooves, an annular groove, a discharge groove, and a communication groove, all of which are preferably within the above range. Further, it is preferable that the depths of these grooves are the same.

更に、本発明に係る研磨パッド用の下敷は、吸着層との接触面となる領域、即ち、溝が形成されていない領域の表面粗さ(Ra)が、0.01~0.7μmであることが好ましい。この下敷の表面粗さは、研磨パッドの固定状態をより良好にするための規定である。本発明者等の検討によれば、下敷の吸着層との接触面の表面粗さが0.7μmを超えると、研磨パッドの固定状態に微小ではあるがら不安定性が生じ、研磨精度の低下が生じることがある。また、下敷の表面が過度に粗いと研磨パッドが剥離するおそれもある。このように、下敷と研磨パッドとの密着性を考慮し、下敷の表面粗さの好ましい範囲を0.7μm以下とした。この表面粗さは、できるだけ低減することが好ましいが、現実的な観点から0.01μmを下限値とするのが好ましい。尚、下敷の表面粗さについては、より好ましくは0.01~0.25μmとする。 Further, the underlay for the polishing pad according to the present invention has a surface roughness (Ra) of 0.01 to 0.7 μm in a region serving as a contact surface with the adsorption layer, that is, a region in which no groove is formed. Is preferable. The surface roughness of this underlay is a regulation for improving the fixed state of the polishing pad. According to the study by the present inventors, if the surface roughness of the contact surface with the adsorption layer of the underlay exceeds 0.7 μm, instability occurs in the fixed state of the polishing pad, although it is minute, and the polishing accuracy is lowered. May occur. In addition, if the surface of the underlay is excessively rough, the polishing pad may peel off. As described above, in consideration of the adhesion between the underlay and the polishing pad, the preferable range of the surface roughness of the underlay was set to 0.7 μm or less. This surface roughness is preferably reduced as much as possible, but from a practical point of view, the lower limit is preferably 0.01 μm. The surface roughness of the underlay is more preferably 0.01 to 0.25 μm.

本発明に係る研磨パッド用の下敷は、研磨パッドの吸着層と接触する面に溝が形成されているが、他方の面、即ち、定盤に接合される面の構成に関しては特に限定されることはない。この面には特段の加工や被覆をせずに、下敷の材質を露出しても良い。また、この面に、下敷を定盤に固定するための接合層を形成していても良い。下敷を強固に固定するためである。この接合層は粘着剤や接着剤で構成されたものが好ましい。具体的な粘着剤、接着剤としてはアクリル系、ゴム系の粘着剤やシリコーン系、エポキシ系の接着剤がある。予め接合層を下敷に備えることで、研磨作業時に速やかに定盤に固定することができる。もっとも、下敷を固定する段階において粘着剤や接着剤を定盤又は下敷に塗布すれば固定は可能であるので、接合層は必須というほどではない。尚、下敷と定盤との接合界面に研磨スラリーが浸透すると、そこで下敷の剥離やズレが生じる可能性がある。そのため、粘着剤・接着剤は研磨スラリーによる耐性があることが要求される。また、下敷と定盤との接合は、隙間が生じないようにすることも要求される。 The underlay for the polishing pad according to the present invention has a groove formed on the surface in contact with the adsorption layer of the polishing pad, but the configuration of the other surface, that is, the surface joined to the surface plate is particularly limited. There is no such thing. The material of the underlay may be exposed without any special processing or coating on this surface. Further, a bonding layer for fixing the underlay to the surface plate may be formed on this surface. This is to firmly fix the underlay. The bonding layer is preferably composed of an adhesive or an adhesive. Specific adhesives and adhesives include acrylic and rubber adhesives, silicone adhesives, and epoxy adhesives. By providing the joint layer on the underlay in advance, it can be quickly fixed to the surface plate during polishing work. However, since fixing is possible by applying an adhesive or an adhesive to the surface plate or the underlay at the stage of fixing the underlay, the bonding layer is not essential. If the polishing slurry permeates the bonding interface between the underlay and the surface plate, the underlay may be peeled off or displaced. Therefore, the pressure-sensitive adhesive / adhesive is required to be resistant to the polishing slurry. It is also required that the joint between the underlay and the surface plate does not create a gap.

以上説明した研磨パッド用の下敷は、所定の吸着層を備える研磨パッド(特許文献1、2)に対して有用である。ここで、好適な研磨パッドの構成について説明すると、この研磨パッドは、被研磨部材を研磨するための研磨層とシリコーン組成物からなる吸着層を必須の構成とする。 The underlay for the polishing pad described above is useful for the polishing pad (Patent Documents 1 and 2) provided with a predetermined adsorption layer. Here, the configuration of a suitable polishing pad will be described. This polishing pad has an essential configuration of a polishing layer for polishing a member to be polished and an adsorption layer composed of a silicone composition.

研磨層は、供給された研磨スラリーを適切に保持し、被研磨部材表面を研磨する部材である。研磨層としては、従来からある一般的な研磨パッドに適用される研磨布が適用できる。例えば、ナイロン、ポリウレタン、ポリエチレンテレフタレート等で形成された不織布、発泡成形体等が適用される。 The polishing layer is a member that appropriately holds the supplied polishing slurry and polishes the surface of the member to be polished. As the polishing layer, a polishing cloth applied to a conventional general polishing pad can be applied. For example, a non-woven fabric made of nylon, polyurethane, polyethylene terephthalate or the like, a foam molded product or the like is applied.

吸着層は、その構成材料に由来する吸着作用により、研磨パッドを固定するための部材である。この吸着層はシリコーン組成物で構成されており、基本的に、上記した本発明者等による従来の研磨パッド(特許文献1、2)で適用されるものと同様である。即ち、吸着層を構成するシリコーン組成物は、両末端にのみビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン、両末端及び側鎖にビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン、末端にのみビニル基を有する分岐状ポリオルガノシロキサンからなるシリコーン、及び末端及び側鎖にビニル基を有する分岐状ポリオルガノシロキサンからなるシリコーンから選ばれる少なくとも1種のシリコーンを架橋させてなる組成物である。 The adsorption layer is a member for fixing the polishing pad by the adsorption action derived from the constituent material. This adsorption layer is composed of a silicone composition, and is basically the same as that applied to the conventional polishing pads (Patent Documents 1 and 2) by the present inventors described above. That is, the silicone composition constituting the adsorption layer is a silicone composed of a linear polyorganosiloxane having a vinyl group only at both ends, and a silicone composed of a linear polyorganosiloxane having a vinyl group at both ends and a side chain. A composition obtained by cross-linking at least one silicone selected from a silicone composed of a branched polyorganosiloxane having a vinyl group only at the terminal and a silicone composed of a branched polyorganosiloxane having a vinyl group at the terminal and side chains. be.

上記のシリコーンの具体例としては、直鎖状ポリオルガノシロキサンの例として化1の化合物が挙げられる。また、分枝状ポリオルガノシロキサンの例として化2の化合物が挙げられる Specific examples of the above-mentioned silicone include the compound of Chemical formula 1 as an example of the linear polyorganosiloxane. Further, as an example of the branched polyorganosiloxane, the compound of Chemical formula 2 can be mentioned.

Figure 0007026942000001
(式中Rは下記有機基、nは整数を表す)
Figure 0007026942000001
(R in the formula represents the following organic group, n represents an integer)

Figure 0007026942000002
(式中Rは下記有機基、m、nは整数を表す)
Figure 0007026942000002
(In the formula, R represents the following organic group, and m and n represent integers)

化1、化2において置換基(R)の具体例としてはメチル基、エチル基、プロピル基等のアルキル基、フェニル基、トリル基、等のアリール基、又はこれらの基の炭素原子に結合した水素原子の一部又は全部をハロゲン原子、シアノ基等で置換した同種又は異種の非置換又は置換の脂肪族不飽和基を除く1価炭化水素基が挙げられる。好ましくはその少なくとも50モル%がメチル基であるものである。置換基は異種でも同種でもよい。また、このポリシロキサンは単独でも2種以上の混合物であってもよい。 Specific examples of the substituent (R) in Chemical formulas 1 and 2 include an alkyl group such as a methyl group, an ethyl group and a propyl group, an aryl group such as a phenyl group and a trill group, or a carbon atom of these groups. Examples thereof include monovalent hydrocarbon groups excluding homozygous or heterologous unsubstituted or substituted aliphatic unsaturated groups in which a part or all of hydrogen atoms are substituted with halogen atoms, cyano groups and the like. Preferably, at least 50 mol% thereof is a methyl group. The substituents may be different or the same. Further, this polysiloxane may be used alone or as a mixture of two or more kinds.

吸着層を構成するシリコーンは、数平均分子量が30000~100000のものが好適な吸着作用を有する。但し、表面粗さの調整にあっては、適用するシリコーンの数平均分子量と製造段階における焼成温度が影響を及ぼす。好適な表面粗さを容易に発揮させるためシリコーンの数平均分子量は、30000~60000のものが好ましい。 The silicone constituting the adsorption layer having a number average molecular weight of 30,000 to 100,000 has a suitable adsorption action. However, in adjusting the surface roughness, the number average molecular weight of the applied silicone and the firing temperature at the manufacturing stage have an influence. The number average molecular weight of silicone is preferably 30,000 to 60,000 in order to easily exhibit suitable surface roughness.

研磨パッドは、以上説明した研磨層と吸着層とで構成される。通常は、これらは直接接合されることはなく、適宜の基材を用い、基材の一方の面に吸着層を形成し、他方の面に研磨層を接合して研磨パッドとする。基材は、ポリエステル(PET、PEN)、ポリエチレン、ポリスチレン、ポリプロピレン、ナイロン、ウレタン、ポリ塩化ビニリデン、ポリ塩化ビニル等の樹脂材料で構成される。 The polishing pad is composed of the polishing layer and the adsorption layer described above. Normally, these are not directly bonded, and an appropriate base material is used to form an adsorption layer on one surface of the base material, and a polishing layer is bonded to the other surface to form a polishing pad. The base material is composed of a resin material such as polyester (PET, PEN), polyethylene, polystyrene, polypropylene, nylon, urethane, polyvinylidene chloride, and polyvinyl chloride.

次に、本発明に係る研磨パッド用の下敷を使用する研磨方法について説明する。本発明に係る研磨方法は、基本的に、上述した所定の吸着層を有する研磨パッドを利用する研磨方法と共通する工程を有する。即ち、研磨パッドを定盤に吸着固定し、研磨スラリーを供給しつつ研磨パッドを回転させると共に、研磨パッドに被研磨部材を押圧して研磨作業を行う。そして、本発明では、本発明に係る下敷を介して研磨パッドを定盤に固定することを特徴とする。 Next, a polishing method using an underlay for a polishing pad according to the present invention will be described. The polishing method according to the present invention basically has the same steps as the polishing method using the polishing pad having the above-mentioned predetermined adsorption layer. That is, the polishing pad is adsorbed and fixed to the surface plate, the polishing pad is rotated while supplying the polishing slurry, and the member to be polished is pressed against the polishing pad to perform the polishing work. The present invention is characterized in that the polishing pad is fixed to the surface plate via the underlay according to the present invention.

即ち、本発明に係る研磨方法は、少なくとも研磨層と吸着層とを備える研磨パッドを定盤に固定し、被研磨部材を研磨パッドの前記研磨層に摺動させる研磨方法において、研磨パッドの前記吸着層は、両末端にのみビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン、両末端及び側鎖にビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン、末端にのみビニル基を有する分岐状ポリオルガノシロキサンからなるシリコーン、及び末端及び側鎖にビニル基を有する分岐状ポリオルガノシロキサンからなるシリコーンから選ばれる少なくとも1種のシリコーンを架橋させてなる組成物からなるものであり、前記定盤に本発明の研磨パッド用の下敷を固定した後、前記下敷に研磨パッドを固定して研磨するものである。 That is, the polishing method according to the present invention is a polishing method in which a polishing pad including at least a polishing layer and an adsorption layer is fixed to a platen and a member to be polished is slid on the polishing layer of the polishing pad. The adsorption layer is a silicone composed of a linear polyorganosiloxane having a vinyl group only at both ends, a silicone composed of a linear polyorganosiloxane having a vinyl group at both ends and a side chain, and a branch having a vinyl group only at the end. It is composed of a composition obtained by cross-linking at least one kind of silicone selected from silicones made of polyorganosiloxane and silicones made of branched polyorganosiloxane having vinyl groups at the ends and side chains. After fixing the underlay for the polishing pad of the present invention, the polishing pad is fixed to the underlay for polishing.

この研磨方法において、本発明の研磨パッド用の下敷を定盤に固定する際、上記した接合層が下敷に設けられていれば、接合層表面を定盤に粘着・接着することで下敷が固定される。このような場合、通常は下敷の接合層表面に剥離紙が貼られているので、剥離紙を剥がし接合層を露出させて定盤に固定する。また、下敷に上記した接合層が設けられていない場合には、下敷又は定盤の少なくともいずれかに粘着剤・接着剤を塗布した後、下敷を押圧して固定する。 In this polishing method, when the underlay for the polishing pad of the present invention is fixed to the surface plate, if the above-mentioned bonding layer is provided on the surface plate, the underlay is fixed by adhering and adhering the surface of the bonding layer to the surface plate. Will be done. In such a case, since the release paper is usually attached to the surface of the joint layer of the underlay, the release paper is peeled off to expose the joint layer and fixed to the surface plate. If the underlay is not provided with the above-mentioned bonding layer, the underlay is fixed by pressing at least one of the underlay and the surface plate after applying an adhesive / adhesive.

一方、下敷を固定した定盤に研磨パッドを固定するとき、下敷の上に研磨パッドを載置し、研磨パッドを研磨層側から定盤方向に押圧することで完了する。このとき、厳密に全面を均等な力で押圧する必要もなく、研磨層の表面を撫でるようにして押すことで吸着層の吸着作用が発揮される On the other hand, when the polishing pad is fixed to the surface plate on which the underlay is fixed, the polishing pad is placed on the underlay and the polishing pad is pressed from the polishing layer side toward the surface plate to complete the process. At this time, it is not necessary to press the entire surface with an even force, and the adsorption action of the adsorption layer is exhibited by pressing the surface of the polishing layer as if stroking it.

以上のようにして、下敷を介して研磨パッドを定盤に吸着固定した後は、通常の研磨作業を行うことができる。ここで、本発明で対象となる被研磨部材の材質や形状・寸法に制限は全くない。 As described above, after the polishing pad is adsorbed and fixed to the surface plate via the underlay, normal polishing work can be performed. Here, there are no restrictions on the material, shape, and dimensions of the member to be polished, which is the subject of the present invention.

研磨作業中は、研磨スラリーを被研磨部材と研磨パッドとの間に供給する。この研磨作業時に供給される研磨スラリーの構成(研磨砥粒の材質・粒径、溶媒の種類、スラリー濃度等)や添加剤(界面活性剤、増粘剤等)の有無・種類には制限は無い。但し、本発明は、粘性の低い研磨スラリーを適用する研磨作業に対して特に有用である。粘性の低い研磨スラリーは吸着層と定盤との接合界面に侵入し易いからである。本発明が効果的な研磨スラリーは、20℃における粘度が10mPa・s以下の研磨スラリーである。また、3mPa・s以下の研磨スラリーにも効果的であり、1.5mPa・s以下の研磨スラリーに対しても有用である。0.01mPa・sの低粘度のスラリーであっても、研磨パッドの剥離が生じ難くなっている。 During the polishing operation, the polishing slurry is supplied between the member to be polished and the polishing pad. There are restrictions on the composition of the polishing slurry supplied during this polishing operation (material and particle size of the abrasive grains, type of solvent, slurry concentration, etc.) and the presence / absence / type of additives (surfactant, thickener, etc.). There is no. However, the present invention is particularly useful for polishing operations that apply a polishing slurry with low viscosity. This is because the polishing slurry having low viscosity easily penetrates into the bonding interface between the adsorption layer and the surface plate. The polishing slurry for which the present invention is effective is a polishing slurry having a viscosity of 10 mPa · s or less at 20 ° C. It is also effective for polishing slurries of 3 mPa · s or less, and is also useful for polishing slurries of 1.5 mPa · s or less. Even with a low-viscosity slurry of 0.01 mPa · s, peeling of the polishing pad is unlikely to occur.

被研磨部材を順次研磨し、研磨パッドに消耗が見られたときは、交換を行う。このとき、従来と同様、研磨パッドと上方にずらして界面にエアを入れれば容易に研磨パッドの固定解除ができる。そして、新しい研磨パッドを定盤に固定して研磨作業を継続することができる。 The members to be polished are sequentially polished, and when the polishing pad is worn out, it is replaced. At this time, as in the conventional case, the polishing pad can be easily released by shifting it upward from the polishing pad and injecting air into the interface. Then, the new polishing pad can be fixed to the surface plate to continue the polishing work.

本発明に係る研磨パッド用の下敷は、所定のシリコーン組成物からなる吸着層を有する研磨パッドを用いる研磨作業の補助部材として有用である。本発明によれば、研磨スラリーの浸透による研磨パッドのズレや剥離を防止することができる。これにより長時間の研磨作業においても、研磨パッドの不具合による中断のない効率的な作業が可能となる。 The underlay for a polishing pad according to the present invention is useful as an auxiliary member for polishing work using a polishing pad having an adsorption layer made of a predetermined silicone composition. According to the present invention, it is possible to prevent the polishing pad from being displaced or peeled off due to the permeation of the polishing slurry. As a result, even in a long-time polishing work, efficient work without interruption due to a defect of the polishing pad becomes possible.

本発明に係る研磨パッド用の下敷の一例の外観を説明する図。The figure explaining the appearance of an example of the underlay for a polishing pad which concerns on this invention. 本発明に係る研磨パッド用の下敷を適用したときの、研磨パッドの固定状態を説明する図。The figure explaining the fixed state of the polishing pad when the underlay for the polishing pad which concerns on this invention is applied. 本実施形態で使用した研磨装置の概略図。The schematic diagram of the polishing apparatus used in this embodiment. 吸着層を備える従来の研磨パッドの構成を説明する図。The figure explaining the structure of the conventional polishing pad provided with the adsorption layer.

以下、本発明の好適な実施形態を説明する。本実施形態では、図1で例示した本発明に係る研磨パッド用の下敷と同じ構成の下敷を製造し、の外観及び断面構造を示す図である。本実施形態の下敷は、樹脂材料(PET)からなる円板形状の薄板(寸法:直径743mm、厚さ250μm)である。この下敷の表面(研磨パッド側表面)には、外周形状に沿った環状溝が同心円状に2本形成されている。外側の最外縁側の環状溝は、下敷きの縁から15mm離隔して形成されており、内側の環状溝は外側の環状溝と5mm間隔で形成されている。また、最外縁の環状溝には、下敷の外縁方向に排出溝が形成されている。更に、2本の環状溝の間には、これらを連通させる連通溝が形成されている。これらの溝の深さは、何れも150μmである。尚、本実施形態の下敷を構成するPET製の板材の表面粗さ(Ra)は、0.4μmであった。 Hereinafter, preferred embodiments of the present invention will be described. In the present embodiment, it is a figure which manufactures the underlay which has the same structure as the underlay for the polishing pad which concerns on this invention exemplified in FIG. 1, and shows the appearance and the cross-sectional structure of. The underlay of the present embodiment is a disk-shaped thin plate (dimensions: diameter 743 mm, thickness 250 μm) made of a resin material (PET). On the surface of this underlay (the surface on the polishing pad side), two annular grooves along the outer peripheral shape are formed concentrically. The outer annular groove on the outermost edge side is formed at a distance of 15 mm from the edge of the underlay, and the inner annular groove is formed at a distance of 5 mm from the outer annular groove. Further, in the annular groove on the outermost edge, a discharge groove is formed in the direction of the outer edge of the underlay. Further, a communication groove for communicating these is formed between the two annular grooves. The depth of each of these grooves is 150 μm. The surface roughness (Ra) of the PET plate material constituting the underlay of the present embodiment was 0.4 μm.

本実施形態の研磨パッド用の下敷は、PET製のシートから、上記した寸法の円形シートを切り出し、所定位置に環状溝等を形成して製造した。それぞれの溝は、ルーターによる切削加工で形成した。 The underlay for the polishing pad of the present embodiment was manufactured by cutting out a circular sheet having the above-mentioned dimensions from a PET sheet and forming an annular groove or the like at a predetermined position. Each groove was formed by cutting with a router.

本実施形態では、この研磨パッド用下敷と、吸着層を備える研磨パッドを使用してシリコンウエハの研磨作業を行った。 In the present embodiment, the silicon wafer is polished by using the polishing pad underlay and the polishing pad provided with the adsorption layer.

本実施形態で使用した研磨パッドは、PET製の円形の基材(厚さ50μm、寸法φ800mm)の一方の面に、両末端にのみビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン(分子量30000)からなる吸着層(厚さ25μm)を結合したものである。そして、基材の他方の面には、スエード調の研磨布(型番7355-000F:ナップ長450μm、厚さ1.37mm)が接着されている。 The polishing pad used in this embodiment is a silicone (molecular weight) composed of linear polyorganosiloxane having vinyl groups only at both ends on one surface of a circular base material (thickness 50 μm, size φ800 mm) made of PET. It is a bond of an adsorption layer (thickness 25 μm) made of 30000). A suede-like polishing cloth (model number 7355-000F: nap length 450 μm, thickness 1.37 mm) is adhered to the other surface of the base material.

以上説明した研磨パッド及び下敷を用いて研磨試験を行った。この研磨試験は、図3に示す研磨装置の定盤(外径800mm、SUS製)に本実施形態の研磨パッド用下敷を、ゴム系粘着剤で接着し固定した。そして、下敷の上に研磨パッドを吸着固定した後、被研磨部材としてシリコンウエハ(φ8インチ)を研磨した。研磨作業は、シリコンウエハを研磨層上で押圧しつつ回転させ、同時に研磨スラリーを研磨層に滴下(流量150ml/min)して研磨作業を行った。 A polishing test was performed using the polishing pad and the underlay described above. In this polishing test, the underlay for the polishing pad of the present embodiment was adhered and fixed to the surface plate (outer diameter 800 mm, manufactured by SUS) of the polishing apparatus shown in FIG. 3 with a rubber-based adhesive. Then, after the polishing pad was adsorbed and fixed on the underlay, a silicon wafer (φ8 inch) was polished as a member to be polished. In the polishing work, the silicon wafer was rotated while being pressed on the polishing layer, and at the same time, the polishing slurry was dropped onto the polishing layer (flow rate 150 ml / min) to perform the polishing work.

研磨スラリーは、研磨粒子としてコロイダルシリカを含む市販の研磨剤(商品名Glanzox、株式会社フジミインコーポレーテッド製)を純水と界面活性剤で希釈したものを使用した(研磨剤:純水:界面活性剤=70:25:5)。この研磨スラリーは、粘度0.7mPa・sであった。 The polishing slurry used was a commercially available polishing agent containing colloidal silica as polishing particles (trade name: Glanzox, manufactured by Fujimi Incorporated Co., Ltd.) diluted with pure water and a surfactant (abrasive: pure water: surfactant). Agent = 70:25: 5). This polishing slurry had a viscosity of 0.7 mPa · s.

その他の研磨条件は、下記の通りとした。
・研磨圧力:0.163kgf/cm2
・研磨パッドの回転速度:45rpm
・被研磨部材の回転速度:47rpm
・ヘッドの揺動速度:250mm/min
・研磨枚数、研磨時間:200枚のウエハを1枚あたり3min研磨処理
Other polishing conditions were as follows.
・ Polishing pressure: 0.163kgf / cm 2
・ Rotation speed of polishing pad: 45 rpm
-Rotation speed of the member to be polished: 47 rpm
・ Head swing speed: 250 mm / min
・ Number of wafers to be polished, polishing time: 200 wafers are polished for 3 minutes per wafer.

上記の各件間時間での研磨作業後、研磨パッドと定盤との密着状態を目視にて確認し、研磨パッドのズレや剥離の有無を検討した。その結果、200枚のウエハを研磨した後でも研磨パッドのズレや剥離は観察されなかった。また、研磨作業後のウエハを純水で洗浄し乾燥させた後、被研摩面を観察したところ顕著な傷は全く観察されなかった。 After the polishing work in each of the above time intervals, the state of adhesion between the polishing pad and the surface plate was visually confirmed, and the presence or absence of misalignment or peeling of the polishing pad was examined. As a result, no deviation or peeling of the polishing pad was observed even after polishing 200 wafers. Further, when the wafer after the polishing work was washed with pure water and dried, and then the surface to be polished was observed, no remarkable scratches were observed.

比較例:本実施形態の研磨パッド用の下敷の効果を確認するため、従来と同様、下敷を使用せずに研磨パッドを定盤に固定して研磨試験を行った。このとき、上記と同様の研磨条件で研磨したところ、50枚のウエハを研磨した後までは問題なかった。しかし、50枚を超えたあたりから研磨パッドのズレが生じ、その後も部分的な剥がれが生じた。よって、本発明における下敷の効果が確認された。 Comparative Example : In order to confirm the effect of the underlay for the polishing pad of the present embodiment, the polishing test was performed by fixing the polishing pad to the surface plate without using the underlay as in the conventional case. At this time, when polishing was performed under the same polishing conditions as above, there was no problem until after 50 wafers were polished. However, the polishing pad was displaced from around 50 sheets, and even after that, partial peeling occurred. Therefore, the effect of the underlay in the present invention was confirmed.

以上説明したように、本発明に係る研磨パッド用の下敷は、従来の吸着層を有する研磨パッドによる研磨作業において、研磨パッドのズレや剥離を抑制する補助部材として作用する。本発明によれば、長時間の研磨作業においても、研磨パッドの固定状態を維持することができる。本発明は、大径化、大面積化が進むウエハやディスプレイパネルに対しても、高精度な研磨面を形成することができる。 As described above, the underlay for the polishing pad according to the present invention acts as an auxiliary member for suppressing the displacement or peeling of the polishing pad in the polishing work by the conventional polishing pad having an adsorption layer. According to the present invention, the fixed state of the polishing pad can be maintained even in the polishing work for a long time. INDUSTRIAL APPLICABILITY The present invention can form a highly accurate polished surface even for a wafer or a display panel whose diameter and area are increasing.

Claims (6)

研磨層及び吸着層を備える研磨パッドを定盤に固定し、被研磨部材を研磨パッドの前記研磨層に摺動させる研磨方法において、
前記研磨パッドの前記吸着層は、両末端にのみビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン、両末端及び側鎖にビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン、末端にのみビニル基を有する分岐状ポリオルガノシロキサンからなるシリコーン、及び末端及び側鎖にビニル基を有する分岐状ポリオルガノシロキサンからなるシリコーンから選ばれる少なくとも1種のシリコーンを架橋させてなる組成物からなるものであり、
前記研磨パッドを前記定盤へ固定する際、
薄板状の研磨パッド用の下敷であって、前記研磨パッドと接する面上に、下敷の外縁に沿った環状溝が少なくとも1本形成されており、更に、最外縁側に形成された前記環状溝から下敷の外縁方向に延び、外縁端部で開口を有する排出溝が少なくとも1本形成された研磨パッド用の下敷を、前記定盤に固定し、
その後、前記下敷に前記研磨パッドの前記吸着層を固定して研磨する研磨方法。
In a polishing method in which a polishing pad including a polishing layer and an adsorption layer is fixed to a surface plate and a member to be polished is slid on the polishing layer of the polishing pad.
The adsorption layer of the polishing pad is a silicone composed of a linear polyorganosiloxane having a vinyl group only at both ends, a silicone composed of a linear polyorganosiloxane having a vinyl group at both ends and a side chain, and a silicone having a vinyl group only at the ends. It comprises a composition obtained by cross-linking at least one silicone selected from a silicone composed of a branched polyorganosiloxane having a vinyl group and a silicone composed of a branched polyorganosiloxane having a vinyl group at the terminal and side chains. can be,
When fixing the polishing pad to the surface plate
An underlay for a thin plate-shaped polishing pad, at least one annular groove along the outer edge of the underlay is formed on the surface in contact with the polishing pad, and the annular groove formed on the outermost edge side. An underlay for a polishing pad, which extends from the bottom toward the outer edge of the underlay and has at least one discharge groove having an opening at the outer edge end, is fixed to the surface plate.
Then, a polishing method in which the adsorption layer of the polishing pad is fixed to the underlay and polished.
研磨パッド用の下敷には、2本以上の環状溝が形成されており、隣接する環状溝同士を連通する連通溝が少なくとも1本形成された請求項1記載の研磨方法。 The polishing method according to claim 1, wherein two or more annular grooves are formed in the underlay for the polishing pad, and at least one communication groove that communicates the adjacent annular grooves is formed . 研磨パッド用の下敷の最外縁側に位置する環状溝が、下敷の外縁から5mm以上離隔して形成されている請求項1又は請求項2記載の研磨方法。 The polishing method according to claim 1 or 2, wherein the annular groove located on the outermost edge side of the underlay for the polishing pad is formed at a distance of 5 mm or more from the outer edge of the underlay . 研磨パッド用の下敷には、2本以上の環状溝が形成されており、隣接する環状溝の間隔が1.5mm以上15mm以下となるようになっている請求項1~請求項3のいずれかに記載の研磨方法。 One of claims 1 to 3, wherein two or more annular grooves are formed in the underlay for the polishing pad, and the distance between the adjacent annular grooves is 1.5 mm or more and 15 mm or less. The polishing method described in. 研磨パッド用の下敷の下敷表面上に形成された溝の深さが、下敷の厚さに対して20%以上80%以下であり、溝の幅が2mm以上10mm以下である請求項1~請求項4のいずれかに記載の研磨方法。 Claims 1 to claim that the depth of the groove formed on the surface of the underlay for the polishing pad is 20% or more and 80% or less with respect to the thickness of the underlay, and the width of the groove is 2 mm or more and 10 mm or less. Item 4. The polishing method according to any one of Items 4. 研磨パッド用の下敷の下敷表面の溝が形成されていない領域の表面粗さ(Ra)が、0.01~0.7μmである請求項1~請求項5のいずれかに記載の研磨方法。
The polishing method according to any one of claims 1 to 5, wherein the surface roughness (Ra) of the region where the groove on the surface of the underlay for the polishing pad is not formed is 0.01 to 0.7 μm .
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KR20210002464A (en) 2021-01-08
CN111867781B (en) 2022-07-19
TW201945120A (en) 2019-12-01
KR102629759B1 (en) 2024-01-25
WO2019208605A1 (en) 2019-10-31

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