JP2019188547A - Underlay for polishing pad and polishing method using the same - Google Patents
Underlay for polishing pad and polishing method using the same Download PDFInfo
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- JP2019188547A JP2019188547A JP2018085015A JP2018085015A JP2019188547A JP 2019188547 A JP2019188547 A JP 2019188547A JP 2018085015 A JP2018085015 A JP 2018085015A JP 2018085015 A JP2018085015 A JP 2018085015A JP 2019188547 A JP2019188547 A JP 2019188547A
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- surface plate
- groove
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Abstract
Description
本発明は、半導体部品、電子部品等の研磨作業で使用される研磨パッドに用いられる補助部材に関する。詳しくは、所定の吸着層を備える研磨パッドを定盤に固定する際に、定盤と研磨パッドとの間に設置される新規な補助部材である研磨パッド用の下敷に関する。 The present invention relates to an auxiliary member used for a polishing pad used in polishing work of a semiconductor component, an electronic component or the like. More specifically, the present invention relates to an underlay for a polishing pad that is a new auxiliary member installed between the surface plate and the polishing pad when a polishing pad having a predetermined adsorption layer is fixed to the surface plate.
半導体ウエハ、ディスプレイ用ガラス基板、ハードディスク用基板といった半導体部品、電子部品の製造プロセスにおいては、基板等の表面の平坦化や鏡面化のための研磨工程が含まれる。研磨工程は、研磨パッドを研磨装置の定盤に固定し、研磨パッドの研磨層表面に研磨スラリーを供給しながら、加圧状態で被研磨部材と研磨パッドと摺動させることによって行われる。 In the manufacturing process of semiconductor components such as semiconductor wafers, glass substrates for displays, and substrates for hard disks, and electronic components, a polishing process for flattening the surface of the substrate or the like and for making a mirror surface is included. The polishing process is performed by fixing the polishing pad to the surface plate of the polishing apparatus and sliding the member to be polished and the polishing pad under pressure while supplying the polishing slurry to the polishing layer surface of the polishing pad.
研磨パッドの定盤への固定方法としては、かつては粘着テープ等の粘着材による方法が主流であったが、この方法には研磨パッドの交換・固定作業に手間がかかり、研磨工程の作業効率を大きく低下させていた。この研磨パッドの固定の問題に対して、固定・交換作業を容易に行うことのできる研磨パッドを開発している（特許文献１、２）。 In the past, the method of fixing the polishing pad to the surface plate was mainly done with an adhesive material such as adhesive tape. However, this method requires time and labor for replacing and fixing the polishing pad, and the efficiency of the polishing process. Was greatly reduced. With respect to the problem of fixing the polishing pad, a polishing pad that can be easily fixed and replaced has been developed (Patent Documents 1 and 2).
かかる吸着層を備える研磨パッドの外観を図４に示す。この研磨パッドは、研磨層を支持する基材の裏面側に、吸着作用を有する所定のシリコーン化合物からなる吸着層を設けたものである。この吸着層を構成するシリコーン化合物は、ガラスや金属等の材質を問わずに吸着作用を有し、その保持力も良好である。この吸着による保持力については、剪断力（水平方向の固定強度）が高い一方で、剥離力（垂直方向の固定強度）は低いという特性がみられる。この特性は、研磨パッドを定盤へ固定する上で好適である。研磨作業においては、研磨パッドは水平方向の応力を継続的に受けるので、剪断力において高い保持力が必要だからである。垂直方向の保持力に関しては、研磨パッドは定盤に押圧されているので大きな保持力は必ずしも要求されない。そして、このシリコーン化合物からなる吸着層の吸着効果は研磨パッドの面内で均一であり、中心部から端部にわたって均等な保持力を発揮することができる。よって、安定的な研磨作業が期待できる。 The appearance of a polishing pad provided with such an adsorption layer is shown in FIG. In this polishing pad, an adsorption layer made of a predetermined silicone compound having an adsorption action is provided on the back side of a base material that supports the polishing layer. The silicone compound constituting the adsorbing layer has an adsorbing action regardless of the material such as glass or metal, and has a good holding power. Regarding the holding force by this adsorption, there is a characteristic that the shearing force (fixed strength in the horizontal direction) is high, while the peeling force (fixed strength in the vertical direction) is low. This characteristic is suitable for fixing the polishing pad to the surface plate. This is because, in the polishing operation, the polishing pad is continuously subjected to horizontal stress, and thus a high holding force is required for the shearing force. Regarding the holding force in the vertical direction, a large holding force is not necessarily required because the polishing pad is pressed against the surface plate. The adsorption effect of the adsorption layer made of the silicone compound is uniform within the surface of the polishing pad, and can exhibit a uniform holding force from the center to the end. Therefore, stable polishing work can be expected.
また、この研磨パッドは、定盤への固定をスムーズに行うことができ、交換作業を効率的に行うことができるという利点もある。上記のように、研磨パッドの吸着層は、剪断力に比して剥離力が低いことから、研磨パッドを定盤に垂直方向に軽く押圧するだけで固定でき、脱着も容易だからである。従って、本願出願人による研磨パッドは、研磨作業の効率化の観点からも有用である。 In addition, this polishing pad can be fixed to the surface plate smoothly, and there is also an advantage that replacement work can be performed efficiently. As described above, since the adsorbing layer of the polishing pad has a lower peeling force than the shearing force, it can be fixed by simply pressing the polishing pad lightly in the vertical direction against the surface plate, and is easily detached. Therefore, the polishing pad by the present applicant is also useful from the viewpoint of increasing the efficiency of the polishing operation.
上述のように、本願出願人による所定の吸着層を備える研磨パッドは、交換作業に伴う利便性が良好であると共に、定盤への固定能力にも優れている。しかし、本発明者等の検討によると、かかる有用な研磨パッドを使用した場合であっても、稀にではあるが、研磨作業の進行によって、研磨パッドのズレや部分的な剥離が生じることがあることが確認されている。 As described above, the polishing pad provided with the predetermined adsorption layer by the applicant of the present application is not only convenient for replacement work but also excellent in fixing ability to the surface plate. However, according to studies by the present inventors, even when such a useful polishing pad is used, the polishing pad may be displaced or partially peeled off as the polishing operation progresses. It has been confirmed that there is.
この場合に生じる研磨パッドのズレや剥離は、必ずしも研磨時間の長短や研磨パッドの交換頻度による吸着層の劣化によるものではない。また、常に生じる不具合というわけでもなく、殆どの研磨環境や条件においては問題なく研磨作業を行うことができる。但し、この研磨パッドをこれまで以上に普及させるためには、僅かな可能性であっても剥離等の不具合を解消させることが好ましい。 The deviation or peeling of the polishing pad that occurs in this case is not necessarily due to the deterioration of the adsorption layer due to the length of the polishing time or the frequency of replacement of the polishing pad. Further, this is not a problem that always occurs, and the polishing operation can be performed without problems in most polishing environments and conditions. However, in order to make this polishing pad more widespread than before, it is preferable to eliminate problems such as peeling even with a slight possibility.
本発明は、以上のような背景のもとになされたものであり、所定のシリコーン組成物からなる吸着層を有する研磨パッドを利用する研磨方法について、定盤からのズレや剥離等を抑制するための手法を提供する。具体的には、吸着層を有する研磨パッドに対して有用な補助部材と、これを利用した研磨方法について開示する。 The present invention has been made based on the background as described above, and suppresses deviation or peeling from a surface plate in a polishing method using a polishing pad having an adsorption layer made of a predetermined silicone composition. Provide a method for Specifically, an auxiliary member useful for a polishing pad having an adsorption layer and a polishing method using the same are disclosed.
本発明者等は上記目的のため、所定の吸着層を備える研磨パッド関して、研磨作業中に定盤から剥離等する要因について検討することとした。その結果、研磨パッドの吸着層と定盤との界面に研磨スラリーが侵入することがあり、これが剥離等を引き起こす可能性があると考察した。研磨スラリーは、溶媒に、コロイダルシリカ、アルミナ、セリア、ダイヤモンド等からなる研磨砥粒を分散させたものを基本構成とする懸濁液である。本発明者等は、検討の結果、研磨スラリーの構成・成分によっては、研磨パッドと定盤との界面への侵入性が増大することがあるとの考察をしている。特に、成分調整によって粘性が低い研磨スラリーにおいて、界面への侵入性が高くなると考えた。 For the purpose described above, the inventors of the present invention have examined the factors that cause separation from the surface plate during the polishing operation with respect to the polishing pad having a predetermined adsorption layer. As a result, it was considered that polishing slurry may enter the interface between the adsorption layer and the surface plate of the polishing pad, which may cause peeling and the like. The polishing slurry is a suspension having a basic structure in which abrasive grains made of colloidal silica, alumina, ceria, diamond, or the like are dispersed in a solvent. As a result of the study, the present inventors have considered that the penetration into the interface between the polishing pad and the surface plate may increase depending on the composition and components of the polishing slurry. In particular, it was considered that the penetration into the interface becomes high in a polishing slurry having a low viscosity by adjusting the components.
粘性が低い研磨スラリーは、研磨パッドと定盤との間の微細な隙間による毛細管現象の影響も相俟って、界面に比較的容易に侵入する。そして、界面にスラリーが蓄積した状態は、シリコーン組成物からなる吸着層にとって好ましくない状態であり、吸着力が低下することとなる。この吸着力低下によって、研磨パッドの定盤からの剥離やズレが生じることとなる。 A polishing slurry having a low viscosity penetrates into the interface relatively easily due to the influence of capillary action due to a fine gap between the polishing pad and the surface plate. And the state which the slurry accumulate | stored in the interface is a state unpreferable for the adsorption layer which consists of a silicone composition, and adsorption power will fall. Due to this decrease in the adsorption force, the polishing pad is peeled off or displaced from the surface plate.
但し、研磨パッドの吸着層の能力低下の要因が研磨スラリーにあるとしても、その成分・構成を安易に変更することは難しい。研磨スラリーを構成する研磨砥粒や溶媒等の成分・構成は、被研磨部材の材質や要求される研磨精度等に基づいて最適化されるのが一般的である。研磨スラリーが特定の研磨パッドに影響を及ぼすことが懸念されるからといって、研磨精度等に影響を与えるような変更を加えることは容易に許容できない。 However, even if the polishing slurry has a factor in reducing the capacity of the adsorption layer of the polishing pad, it is difficult to easily change the components and configuration. In general, the components and structures such as abrasive grains and solvent constituting the polishing slurry are optimized based on the material of the member to be polished and the required polishing accuracy. Even if it is feared that the polishing slurry affects a specific polishing pad, it is not easily allowed to make a change that affects the polishing accuracy or the like.
また、研磨パッド側の改良に関しても限界があると思われる。特に、上述した吸着層の組成や構造に関して、その利点を維持しつつ、特定の研磨スラリーに対する耐性を強化することは不可能に近いといえる。 Also, there seems to be a limit to the improvement on the polishing pad side. In particular, it can be said that it is almost impossible to enhance the resistance to a specific polishing slurry while maintaining the advantages of the composition and structure of the adsorption layer described above.
そこで、本発明者等は、従来の吸着層を備える研磨パッドをそのまま使用しながら、定盤に対する固定状態を調整することができる補助部材を適用することについて検討を行った。そして、研磨パッドの下に設置する薄板状の下敷であって、研磨パッド表面から浸出する研磨スラリーを捕捉し放出するための溝を備えるものに想到した。 Therefore, the present inventors have examined the application of an auxiliary member that can adjust the fixed state with respect to the surface plate while using a polishing pad having a conventional adsorption layer as it is. Then, a thin plate-like underlay placed under the polishing pad, which has a groove for capturing and releasing the polishing slurry leached from the surface of the polishing pad, has been conceived.
即ち、本発明は、研磨パッドを定盤に固定する際、前記研磨パッドと前記定盤との間に設置される薄板状の下敷であって、前記研磨パッドと接する面上に、下敷の外縁に沿った環状溝が少なくとも１本形成されており、更に、最外縁側に形成された前記環状溝から下敷の外縁方向に延び、外縁端部で開口を有する排出溝が少なくとも１本形成された、研磨パッド用の下敷である。 That is, the present invention is a thin plate-like underlay placed between the polishing pad and the surface plate when the polishing pad is fixed to the surface plate, and the outer edge of the underlay is placed on the surface in contact with the polishing pad. And at least one discharge groove extending from the annular groove formed on the outermost edge side toward the outer edge of the underlay and having an opening at the outer edge. An underlay for the polishing pad.
図１は、本発明に係る研磨パッド用の下敷の具体例の外観を示す図である。図１で例示する研磨パッド用の下敷は、円板形状の薄板であって、その外周に沿って円環状の環状溝が形成されている。図１の例では、同心円状の２本の環状溝が形成されている。そして、最外縁側の環状溝については、下敷の外縁に向かう溝であって、開口を有する排出溝が形成されている。 FIG. 1 is a view showing the appearance of a specific example of an underlay for a polishing pad according to the present invention. The underlay for the polishing pad illustrated in FIG. 1 is a disk-shaped thin plate, and an annular groove is formed along the outer periphery thereof. In the example of FIG. 1, two concentric circular grooves are formed. And about the annular groove of the outermost edge side, it is a groove | channel which goes to the outer edge of an underlay, Comprising: The discharge | emission groove | channel which has an opening is formed.
そして、図２は、図１で例示した本発明に係る研磨パッド用の下敷を適用し、研磨パッドを定盤に固定したときの状態を説明するものである。本発明に係る下敷を設置するとき、下敷は定盤に隙間のない状態で密着させる。一方、研磨パッドを下敷に密着させたとき、両者の界面には環状溝による隙間が生じる。このようにして下敷を介して研磨パッドを定盤に固定した状態で、研磨パッド表面に研磨スラリーを供給しつつ、研磨パッドを回転して研磨作業を行う。 FIG. 2 illustrates a state when the polishing pad underlay according to the present invention illustrated in FIG. 1 is applied and the polishing pad is fixed to a surface plate. When installing the underlay according to the present invention, the underlay is brought into close contact with the surface plate without any gaps. On the other hand, when the polishing pad is brought into close contact with the underlay, a gap due to an annular groove is formed at the interface between the two. In this manner, with the polishing pad fixed to the surface plate via the underlay, the polishing pad is rotated and the polishing operation is performed while supplying the polishing slurry to the surface of the polishing pad.
図２で示すように、研磨作業中、研磨スラリーは遠心力により研磨パッドの側面に達し、次第に吸着層と下敷との界面に浸透する。本発明では、まず、この界面に浸透する研磨スラリーが環状溝に貯留される。これにより、研磨スラリーが吸着層界面で全面的に広がることが抑制され、研磨スラリーの影響は局所的なものとなる。そして、環状溝が貯留した研磨スラリーは、研磨パッドの回転によって排出溝を経由して外部に放出される。以上のプロセスにより、研磨パッドの縁付近での密着状態は維持されるので、そこから発生し易いズレや剥離を抑制することができる。 As shown in FIG. 2, during the polishing operation, the polishing slurry reaches the side surface of the polishing pad by centrifugal force, and gradually permeates the interface between the adsorption layer and the underlay. In the present invention, first, the polishing slurry that permeates the interface is stored in the annular groove. Thereby, it is suppressed that a polishing slurry spreads on the whole surface at an adsorption layer interface, and the influence of a polishing slurry becomes a local thing. Then, the polishing slurry stored in the annular groove is discharged to the outside through the discharge groove by the rotation of the polishing pad. By the above process, the close contact state in the vicinity of the edge of the polishing pad is maintained, so that it is possible to suppress deviation and peeling that are likely to occur therefrom.
次に、上記のような作用を有する本発明に係る研磨パッド用下敷の構成について、より詳細に説明する。 Next, the structure of the polishing pad underlay according to the present invention having the above-described action will be described in more detail.
本発明に係る研磨パッド用下敷の全体の形状及び寸法は、適用される研磨パッドと略同じとする。通常、研磨パッドは円形のものが一般的であるので、下敷も円板状とすることが多い。下敷の厚さについては、特に制限はないが、過度に厚くする必要はない。下敷の厚さは、１５０μｍ〜１０００μｍ程度の薄板とするのが好ましく、１５０μｍ〜５００μｍとするのがより好ましい。 The overall shape and dimensions of the polishing pad underlay according to the present invention are substantially the same as the applied polishing pad. Usually, since the polishing pad is generally circular, the underlay is also often disk-shaped. The thickness of the underlay is not particularly limited, but need not be excessively thick. The thickness of the underlay is preferably a thin plate of about 150 μm to 1000 μm, and more preferably 150 μm to 500 μm.
下敷の構成材料は、素材コストや強度に加えて、研磨スラリーに対する化学的安定性を考慮し各種の樹脂材料が適用される。具体的には、ポリエステル、ポリエチレン、ポリスチレン、ポリプロピレン、ナイロン、ウレタン、ポリ塩化ビニリデン、ポリ塩化ビニル等の樹脂である。好ましくは、ポリエステル系樹脂材料であり、ポリエチレンテレフタレート（ＰＥＴ）、ポリエチレンナフタレート（ＰＥＮ）であり、特に好ましいのはＰＥＴである。 Various resin materials are applied to the constituent material of the underlay in consideration of chemical stability with respect to the polishing slurry in addition to material cost and strength. Specifically, resins such as polyester, polyethylene, polystyrene, polypropylene, nylon, urethane, polyvinylidene chloride, and polyvinyl chloride. Polyester resin materials are preferable, and polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are preferable, and PET is particularly preferable.
そして、上記のとおり、本発明に係る研磨パッド用下敷の特徴は、研磨スラリーを貯留し放出するための環状溝が形成されている点にある。環状溝は、下敷の外縁に沿った円環形状の溝である。環状溝は、下敷の外縁端部から中心方向に向かって少し離れた位置に少なくとも１本形成される。環状溝は、１本又は２本以上形成され、１本〜４本形成されるのが好ましい。 As described above, the polishing pad underlay according to the present invention is characterized in that an annular groove for storing and discharging the polishing slurry is formed. The annular groove is an annular groove along the outer edge of the underlay. At least one annular groove is formed at a position slightly away from the outer edge of the underlay toward the center. One or two or more annular grooves are formed, and preferably 1 to 4 annular grooves are formed.
また、下敷には、環状溝に貯留された研磨スラリーを外部へ放出するため、環状溝から下敷の外縁方向に延伸する排出溝が形成される。排水溝は、下敷の外縁端部で開口を有し、ここから研磨スラリーを放出する。排水溝は直線状であっても良いし、曲線状であっても良い。排水溝は、少なくとも１本形成されるが、複数形成するのが好ましい。排水溝は、２〜８本形成するのが好ましく、等間隔で形成するのが好ましい。 Moreover, in order to discharge the polishing slurry stored in the annular groove to the outside, a discharge groove extending from the annular groove toward the outer edge of the underlying sheet is formed in the underlying sheet. The drainage groove has an opening at the outer edge edge of the underlay, from which the polishing slurry is discharged. The drainage groove may be linear or curved. Although at least one drainage groove is formed, it is preferable to form a plurality of drainage grooves. It is preferable to form 2-8 drainage grooves, and it is preferable to form them at regular intervals.
更に、環状溝が２本以上形成される場合、最外縁側にある環状溝以外の環状溝から研磨スラリーを効果的に排出するため、隣接する環状溝同士を連通する連通溝が形成されていることが好ましい。この連通溝は、隣接する環状溝の組み合わせ毎に少なくとも１本形成されることが好ましい。連通溝も直線状であっても良いし、曲線状であっても良い。また、排出溝と同様、２〜８本形成するのが好ましく、等間隔で形成するのが好ましい。 Further, when two or more annular grooves are formed, a communication groove that connects adjacent annular grooves is formed in order to effectively discharge the polishing slurry from an annular groove other than the annular groove on the outermost edge side. It is preferable. It is preferable that at least one communication groove is formed for each combination of adjacent annular grooves. The communication groove may also be linear or curved. Moreover, it is preferable to form 2-8 like a discharge groove, and it is preferable to form at equal intervals.
環状溝を形成する位置に関しては、特に制限されることはない。好ましくは、最外縁側に位置する環状溝は、下敷の外縁から５ｍｍ以上離隔して形成されていることが好ましい。この間隔が過度に大きいと、研磨スラリーが環状溝に到達する前に、下敷と研磨パッドとの界面に留まる可能性があるからである。また、２本以上の環状溝が形成されており、隣接する環状溝の間隔を１．５ｍｍ以上１５ｍｍ以下とするのが好ましい。より好ましくは、１．５ｍｍ以上５ｍｍ以下の間隔を設定する。２本以上の環状溝を形成する場合、等間隔で同心円状に形成することが好ましい。尚、上記で説明する溝の位置は、溝幅の中心線を基準とずる。 The position where the annular groove is formed is not particularly limited. Preferably, the annular groove located on the outermost edge side is preferably formed 5 mm or more away from the outer edge of the underlay. This is because if this distance is excessively large, the polishing slurry may remain at the interface between the underlay and the polishing pad before reaching the annular groove. Two or more annular grooves are formed, and the interval between adjacent annular grooves is preferably 1.5 mm or more and 15 mm or less. More preferably, an interval of 1.5 mm or more and 5 mm or less is set. When two or more annular grooves are formed, they are preferably formed concentrically at regular intervals. Note that the position of the groove described above is based on the center line of the groove width.
溝の深さ（高さ）は、下敷の厚さに対して２０％以上８０％以下の範囲内とすることが好ましい。また、溝の幅は、２ｍｍ以上１０ｍｍ以下の範囲内とすることが好ましい。これらの溝の寸法は、研磨スラリーを好適に貯留・放出することを考慮して設定される。尚、本発明の下敷には、環状溝、排出溝、連通溝の３態様の溝が形成されるが、いずれも上記範囲内にあることが好ましい。また、これらの溝の深さは同じくすることが好ましい。 The depth (height) of the groove is preferably in the range of 20% to 80% with respect to the thickness of the underlay. The width of the groove is preferably in the range of 2 mm or more and 10 mm or less. The dimensions of these grooves are set in consideration of suitably storing and discharging the polishing slurry. The underlay of the present invention is formed with three types of grooves, an annular groove, a discharge groove, and a communication groove, all of which are preferably within the above range. Moreover, it is preferable that the depth of these grooves is the same.
更に、本発明に係る研磨パッド用の下敷は、吸着層との接触面となる領域、即ち、溝が形成されていない領域の表面粗さ（Ｒａ）が、０．０１〜０．７μｍであることが好ましい。この下敷の表面粗さは、研磨パッドの固定状態をより良好にするための規定である。本発明者等の検討によれば、下敷の吸着層との接触面の表面粗さが０．７μｍを超えると、研磨パッドの固定状態に微小ではあるがら不安定性が生じ、研磨精度の低下が生じることがある。また、下敷の表面が過度に粗いと研磨パッドが剥離するおそれもある。このように、下敷と研磨パッドとの密着性を考慮し、下敷の表面粗さの好ましい範囲を０．７μｍ以下とした。この表面粗さは、できるだけ低減することが好ましいが、現実的な観点から０．０１μｍを下限値とするのが好ましい。尚、下敷の表面粗さについては、より好ましくは０．０１〜０．２５μｍとする。 Further, in the underlay for the polishing pad according to the present invention, the surface roughness (Ra) of the region that is a contact surface with the adsorption layer, that is, the region where no groove is formed is 0.01 to 0.7 μm. It is preferable. The surface roughness of this underlay is a rule for making the fixed state of the polishing pad better. According to the study by the present inventors, when the surface roughness of the contact surface with the underlying adsorption layer exceeds 0.7 μm, instability occurs in the fixed state of the polishing pad, but the polishing accuracy decreases. May occur. Further, if the surface of the underlay is excessively rough, the polishing pad may be peeled off. Thus, considering the adhesion between the underlay and the polishing pad, the preferred range of the surface roughness of the underlay is set to 0.7 μm or less. The surface roughness is preferably reduced as much as possible, but from a practical viewpoint, it is preferable to set the lower limit to 0.01 μm. The surface roughness of the underlay is more preferably 0.01 to 0.25 μm.
本発明に係る研磨パッド用の下敷は、研磨パッドの吸着層と接触する面に溝が形成されているが、他方の面、即ち、定盤に接合される面の構成に関しては特に限定されることはない。この面には特段の加工や被覆をせずに、下敷の材質を露出しても良い。また、この面に、下敷を定盤に固定するための接合層を形成していても良い。下敷を強固に固定するためである。この接合層は粘着剤や接着剤で構成されたものが好ましい。具体的な粘着剤、接着剤としてはアクリル系、ゴム系の粘着剤やシリコーン系、エポキシ系の接着剤がある。予め接合層を下敷に備えることで、研磨作業時に速やかに定盤に固定することができる。もっとも、下敷を固定する段階において粘着剤や接着剤を定盤又は下敷に塗布すれば固定は可能であるので、接合層は必須というほどではない。尚、下敷と定盤との接合界面に研磨スラリーが浸透すると、そこで下敷の剥離やズレが生じる可能性がある。そのため、粘着剤・接着剤は研磨スラリーによる耐性があることが要求される。また、下敷と定盤との接合は、隙間が生じないようにすることも要求される。 In the underlay for the polishing pad according to the present invention, a groove is formed on the surface that contacts the adsorption layer of the polishing pad, but the configuration of the other surface, that is, the surface bonded to the surface plate is particularly limited. There is nothing. The surface material may be exposed without special processing or coating on this surface. Further, a bonding layer for fixing the underlay to the surface plate may be formed on this surface. This is to firmly fix the underlay. This bonding layer is preferably composed of an adhesive or an adhesive. Specific adhesives and adhesives include acrylic and rubber adhesives, silicone and epoxy adhesives. By providing the bonding layer in advance on the underlay, it can be quickly fixed to the surface plate during the polishing operation. However, the bonding layer is not indispensable because it can be fixed by applying an adhesive or adhesive to the surface plate or the base sheet at the stage of fixing the base sheet. If the polishing slurry permeates into the bonding interface between the underlay and the surface plate, the underlay may be peeled off or misaligned there. Therefore, the pressure-sensitive adhesive / adhesive is required to be resistant to the polishing slurry. In addition, it is required that the gap between the underlayment and the surface plate is not generated.
以上説明した研磨パッド用の下敷は、所定の吸着層を備える研磨パッド（特許文献１、２）に対して有用である。ここで、好適な研磨パッドの構成について説明すると、この研磨パッドは、被研磨部材を研磨するための研磨層とシリコーン組成物からなる吸着層を必須の構成とする。 The underlay for the polishing pad described above is useful for a polishing pad (Patent Documents 1 and 2) provided with a predetermined adsorption layer. Here, the structure of a suitable polishing pad will be described. This polishing pad has a polishing layer for polishing a member to be polished and an adsorption layer made of a silicone composition as essential components.
研磨層は、供給された研磨スラリーを適切に保持し、被研磨部材表面を研磨する部材である。研磨層としては、従来からある一般的な研磨パッドに適用される研磨布が適用できる。例えば、ナイロン、ポリウレタン、ポリエチレンテレフタレート等で形成された不織布、発泡成形体等が適用される。 The polishing layer is a member that appropriately holds the supplied polishing slurry and polishes the surface of the member to be polished. As the polishing layer, a polishing cloth applied to a conventional general polishing pad can be applied. For example, non-woven fabrics, foamed molded bodies, etc. formed from nylon, polyurethane, polyethylene terephthalate, etc. are applied.
吸着層は、その構成材料に由来する吸着作用により、研磨パッドを固定するための部材である。この吸着層はシリコーン組成物で構成されており、基本的に、上記した本発明者等による従来の研磨パッド（特許文献１、２）で適用されるものと同様である。即ち、吸着層を構成するシリコーン組成物は、両末端にのみビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン、両末端及び側鎖にビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン、末端にのみビニル基を有する分岐状ポリオルガノシロキサンからなるシリコーン、及び末端及び側鎖にビニル基を有する分岐状ポリオルガノシロキサンからなるシリコーンから選ばれる少なくとも１種のシリコーンを架橋させてなる組成物である。 The adsorption layer is a member for fixing the polishing pad by an adsorption action derived from the constituent material. This adsorption layer is made of a silicone composition, and is basically the same as that applied to the conventional polishing pad (Patent Documents 1 and 2) by the inventors. That is, the silicone composition constituting the adsorbing layer is a silicone composed of a linear polyorganosiloxane having vinyl groups only at both ends, a silicone composed of a linear polyorganosiloxane having vinyl groups at both ends and side chains, A composition obtained by crosslinking at least one silicone selected from a silicone comprising a branched polyorganosiloxane having a vinyl group only at the terminal and a silicone comprising a branched polyorganosiloxane having a vinyl group at the terminal and side chain. is there.
上記のシリコーンの具体例としては、直鎖状ポリオルガノシロキサンの例として化１の化合物が挙げられる。また、分枝状ポリオルガノシロキサンの例として化２の化合物が挙げられる Specific examples of the silicone include the compound of Chemical Formula 1 as an example of a linear polyorganosiloxane. Further, as an example of the branched polyorganosiloxane, the compound of Chemical formula 2 can be mentioned.
化１、化２において置換基（Ｒ）の具体例としてはメチル基、エチル基、プロピル基等のアルキル基、フェニル基、トリル基、等のアリール基、又はこれらの基の炭素原子に結合した水素原子の一部又は全部をハロゲン原子、シアノ基等で置換した同種又は異種の非置換又は置換の脂肪族不飽和基を除く１価炭化水素基が挙げられる。好ましくはその少なくとも５０モル％がメチル基であるものである。置換基は異種でも同種でもよい。また、このポリシロキサンは単独でも２種以上の混合物であってもよい。 Specific examples of the substituent (R) in Chemical Formula 1 and Chemical Formula 2 are bonded to an alkyl group such as a methyl group, an ethyl group, and a propyl group, an aryl group such as a phenyl group and a tolyl group, or a carbon atom of these groups. And monovalent hydrocarbon groups other than the same or different unsubstituted or substituted aliphatic unsaturated groups in which some or all of the hydrogen atoms are substituted with halogen atoms, cyano groups, or the like. Preferably, at least 50 mol% thereof is a methyl group. The substituents may be different or the same. The polysiloxane may be used alone or as a mixture of two or more.
吸着層を構成するシリコーンは、数平均分子量が３００００〜１０００００のものが好適な吸着作用を有する。但し、表面粗さの調整にあっては、適用するシリコーンの数平均分子量と製造段階における焼成温度が影響を及ぼす。好適な表面粗さを容易に発揮させるためシリコーンの数平均分子量は、３００００〜６００００のものが好ましい。 As the silicone constituting the adsorption layer, those having a number average molecular weight of 30,000 to 100,000 have a suitable adsorption action. However, in adjusting the surface roughness, the number average molecular weight of the applied silicone and the firing temperature in the production stage have an effect. The number average molecular weight of the silicone is preferably 30000 to 60000 in order to easily exhibit a suitable surface roughness.
研磨パッドは、以上説明した研磨層と吸着層とで構成される。通常は、これらは直接接合されることはなく、適宜の基材を用い、基材の一方の面に吸着層を形成し、他方の面に研磨層を接合して研磨パッドとする。基材は、ポリエステル（ＰＥＴ、ＰＥＮ）、ポリエチレン、ポリスチレン、ポリプロピレン、ナイロン、ウレタン、ポリ塩化ビニリデン、ポリ塩化ビニル等の樹脂材料で構成される。 The polishing pad is composed of the polishing layer and the adsorption layer described above. Usually, these are not directly bonded, but an appropriate base material is used, an adsorption layer is formed on one surface of the base material, and a polishing layer is bonded to the other surface to form a polishing pad. The base material is made of a resin material such as polyester (PET, PEN), polyethylene, polystyrene, polypropylene, nylon, urethane, polyvinylidene chloride, and polyvinyl chloride.
次に、本発明に係る研磨パッド用の下敷を使用する研磨方法について説明する。本発明に係る研磨方法は、基本的に、上述した所定の吸着層を有する研磨パッドを利用する研磨方法と共通する工程を有する。即ち、研磨パッドを定盤に吸着固定し、研磨スラリーを供給しつつ研磨パッドを回転させると共に、研磨パッドに被研磨部材を押圧して研磨作業を行う。そして、本発明では、本発明に係る下敷を介して研磨パッドを定盤に固定することを特徴とする。 Next, a polishing method using the polishing pad underlay according to the present invention will be described. The polishing method according to the present invention basically has the same steps as the polishing method using the polishing pad having the predetermined adsorption layer described above. That is, the polishing pad is adsorbed and fixed to the surface plate, the polishing pad is rotated while supplying the polishing slurry, and the member to be polished is pressed against the polishing pad to perform the polishing operation. And in this invention, a polishing pad is fixed to a surface plate through the underlay which concerns on this invention, It is characterized by the above-mentioned.
即ち、本発明に係る研磨方法は、少なくとも研磨層と吸着層とを備える研磨パッドを定盤に固定し、被研磨部材を研磨パッドの前記研磨層に摺動させる研磨方法において、研磨パッドの前記吸着層は、両末端にのみビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン、両末端及び側鎖にビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン、末端にのみビニル基を有する分岐状ポリオルガノシロキサンからなるシリコーン、及び末端及び側鎖にビニル基を有する分岐状ポリオルガノシロキサンからなるシリコーンから選ばれる少なくとも１種のシリコーンを架橋させてなる組成物からなるものであり、前記定盤に本発明の研磨パッド用の下敷を固定した後、前記下敷に研磨パッドを固定して研磨するものである。 That is, the polishing method according to the present invention is a polishing method in which a polishing pad including at least a polishing layer and an adsorption layer is fixed to a surface plate, and a member to be polished slides on the polishing layer of the polishing pad. Adsorption layer is composed of silicone composed of linear polyorganosiloxane having vinyl groups only at both ends, silicone composed of linear polyorganosiloxane having vinyl groups at both ends and side chains, and branched having vinyl groups only at the ends. The surface plate is composed of a composition obtained by crosslinking at least one silicone selected from silicone comprising a polyorganosiloxane and a silicone comprising a branched polyorganosiloxane having vinyl groups at its terminals and side chains. After fixing the base for the polishing pad of the present invention to the base, the polishing pad is fixed to the base and polished. .
この研磨方法において、本発明の研磨パッド用の下敷を定盤に固定する際、上記した接合層が下敷に設けられていれば、接合層表面を定盤に粘着・接着することで下敷が固定される。このような場合、通常は下敷の接合層表面に剥離紙が貼られているので、剥離紙を剥がし接合層を露出させて定盤に固定する。また、下敷に上記した接合層が設けられていない場合には、下敷又は定盤の少なくともいずれかに粘着剤・接着剤を塗布した後、下敷を押圧して固定する。 In this polishing method, when fixing the underlay for the polishing pad of the present invention to the surface plate, if the above-mentioned bonding layer is provided on the underlay, the underlay is fixed by adhering and bonding the surface of the bonding layer to the surface plate. Is done. In such a case, since the release paper is usually stuck on the surface of the bonding layer of the underlay, the release paper is peeled off to expose the bonding layer and fixed to the surface plate. In addition, when the above-described bonding layer is not provided on the underlay, after applying the adhesive / adhesive to at least one of the underlay or the surface plate, the underlay is pressed and fixed.
一方、下敷を固定した定盤に研磨パッドを固定するとき、下敷の上に研磨パッドを載置し、研磨パッドを研磨層側から定盤方向に押圧することで完了する。このとき、厳密に全面を均等な力で押圧する必要もなく、研磨層の表面を撫でるようにして押すことで吸着層の吸着作用が発揮される On the other hand, when the polishing pad is fixed to the surface plate to which the underlay is fixed, the polishing pad is placed on the underlay and is completed by pressing the polishing pad from the polishing layer side toward the surface plate. At this time, there is no need to strictly press the entire surface with a uniform force, and the adsorption action of the adsorption layer is exhibited by stroking the surface of the polishing layer so as to stroke.
以上のようにして、下敷を介して研磨パッドを定盤に吸着固定した後は、通常の研磨作業を行うことができる。ここで、本発明で対象となる被研磨部材の材質や形状・寸法に制限は全くない。 As described above, after the polishing pad is sucked and fixed to the surface plate through the underlay, a normal polishing operation can be performed. Here, there are no restrictions on the material, shape, and dimensions of the member to be polished that is the subject of the present invention.
研磨作業中は、研磨スラリーを被研磨部材と研磨パッドとの間に供給する。この研磨作業時に供給される研磨スラリーの構成（研磨砥粒の材質・粒径、溶媒の種類、スラリー濃度等）や添加剤（界面活性剤、増粘剤等）の有無・種類には制限は無い。但し、本発明は、粘性の低い研磨スラリーを適用する研磨作業に対して特に有用である。粘性の低い研磨スラリーは吸着層と定盤との接合界面に侵入し易いからである。本発明が効果的な研磨スラリーは、２０℃における粘度が１０ｍＰａ・ｓ以下の研磨スラリーである。また、３ｍＰａ・ｓ以下の研磨スラリーにも効果的であり、１．５ｍＰａ・ｓ以下の研磨スラリーに対しても有用である。０．０１ｍＰａ・ｓの低粘度のスラリーであっても、研磨パッドの剥離が生じ難くなっている。 During the polishing operation, the polishing slurry is supplied between the member to be polished and the polishing pad. There are no restrictions on the composition of the polishing slurry supplied during the polishing operation (the material and particle size of the abrasive grains, the type of solvent, the slurry concentration, etc.) and the presence or absence of additives (surfactant, thickener, etc.). No. However, the present invention is particularly useful for a polishing operation in which a polishing slurry having a low viscosity is applied. This is because the low-viscosity polishing slurry easily enters the bonding interface between the adsorption layer and the surface plate. The polishing slurry in which the present invention is effective is a polishing slurry having a viscosity at 20 ° C. of 10 mPa · s or less. It is also effective for polishing slurries of 3 mPa · s or less, and is also useful for polishing slurries of 1.5 mPa · s or less. Even with a low viscosity slurry of 0.01 mPa · s, it is difficult for the polishing pad to peel off.
被研磨部材を順次研磨し、研磨パッドに消耗が見られたときは、交換を行う。このとき、従来と同様、研磨パッドと上方にずらして界面にエアを入れれば容易に研磨パッドの固定解除ができる。そして、新しい研磨パッドを定盤に固定して研磨作業を継続することができる。 The member to be polished is sequentially polished, and when the polishing pad is consumed, it is replaced. At this time, as in the prior art, the polishing pad can be easily unfixed by shifting air upward from the polishing pad and introducing air into the interface. Then, a new polishing pad can be fixed to the surface plate and the polishing operation can be continued.
本発明に係る研磨パッド用の下敷は、所定のシリコーン組成物からなる吸着層を有する研磨パッドを用いる研磨作業の補助部材として有用である。本発明によれば、研磨スラリーの浸透による研磨パッドのズレや剥離を防止することができる。これにより長時間の研磨作業においても、研磨パッドの不具合による中断のない効率的な作業が可能となる。 The underlay for a polishing pad according to the present invention is useful as an auxiliary member for a polishing operation using a polishing pad having an adsorption layer made of a predetermined silicone composition. According to the present invention, it is possible to prevent the polishing pad from being displaced or peeled off due to the penetration of the polishing slurry. Thereby, even in a long polishing operation, an efficient operation without interruption due to a defect of the polishing pad can be performed.
以下、本発明の好適な実施形態を説明する。本実施形態では、図１で例示した本発明に係る研磨パッド用の下敷と同じ構成の下敷を製造し、の外観及び断面構造を示す図である。本実施形態の下敷は、樹脂材料（ＰＥＴ）からなる円板形状の薄板（寸法：直径７４３ｍｍ、厚さ２５０μｍ）である。この下敷の表面（研磨パッド側表面）には、外周形状に沿った環状溝が同心円状に２本形成されている。外側の最外縁側の環状溝は、下敷きの縁から１５ｍｍ離隔して形成されており、内側の環状溝は外側の環状溝と５ｍｍ間隔で形成されている。また、最外縁の環状溝には、下敷の外縁方向に排出溝が形成されている。更に、２本の環状溝の間には、これらを連通させる連通溝が形成されている。これらの溝の深さは、何れも１５０μｍである。尚、本実施形態の下敷を構成するＰＥＴ製の板材の表面粗さ（Ｒａ）は、０．４μｍであった。 Hereinafter, preferred embodiments of the present invention will be described. In this embodiment, an underlay having the same configuration as the underlay for a polishing pad according to the present invention illustrated in FIG. The underlay of this embodiment is a disk-shaped thin plate (dimensions: diameter 743 mm, thickness 250 μm) made of a resin material (PET). Two concentric circular grooves are formed on the surface of the underlay (the surface on the polishing pad side) along the outer peripheral shape. The outermost annular groove on the outermost edge side is formed 15 mm away from the edge of the underlay, and the inner annular groove is formed at an interval of 5 mm from the outer annular groove. Further, a discharge groove is formed in the outermost annular groove in the direction of the outer edge of the underlay. Further, a communication groove is formed between the two annular grooves to communicate these. The depth of these grooves is 150 μm. Note that the surface roughness (Ra) of the PET plate material constituting the underlay of this embodiment was 0.4 μm.
本実施形態の研磨パッド用の下敷は、ＰＥＴ製のシートから、上記した寸法の円形シートを切り出し、所定位置に環状溝等を形成して製造した。それぞれの溝は、ルーターによる切削加工で形成した。 The underlay for the polishing pad of this embodiment was manufactured by cutting out a circular sheet having the above dimensions from a PET sheet and forming an annular groove or the like at a predetermined position. Each groove was formed by cutting with a router.
本実施形態では、この研磨パッド用下敷と、吸着層を備える研磨パッドを使用してシリコンウエハの研磨作業を行った。 In this embodiment, the polishing operation of the silicon wafer was performed using the polishing pad underlay and the polishing pad having the adsorption layer.
本実施形態で使用した研磨パッドは、ＰＥＴ製の円形の基材（厚さ５０μｍ、寸法φ８００ｍｍ）の一方の面に、両末端にのみビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン（分子量３００００）からなる吸着層（厚さ２５μｍ）を結合したものである。そして、基材の他方の面には、スエード調の研磨布（型番７３５５−０００Ｆ：ナップ長４５０μｍ、厚さ１．３７ｍｍ）が接着されている。 The polishing pad used in the present embodiment is a silicone (molecular weight) made of a linear polyorganosiloxane having vinyl groups only at both ends on one surface of a PET circular base (thickness 50 μm, dimension φ800 mm). 30000) adsorbed layer (thickness 25 μm). A suede-like polishing cloth (model number 7355-000F: nap length 450 μm, thickness 1.37 mm) is bonded to the other surface of the base material.
以上説明した研磨パッド及び下敷を用いて研磨試験を行った。この研磨試験は、図３に示す研磨装置の定盤（外径８００ｍｍ、ＳＵＳ製）に本実施形態の研磨パッド用下敷を、ゴム系粘着剤で接着し固定した。そして、下敷の上に研磨パッドを吸着固定した後、被研磨部材としてシリコンウエハ（φ８インチ）を研磨した。研磨作業は、シリコンウエハを研磨層上で押圧しつつ回転させ、同時に研磨スラリーを研磨層に滴下（流量１５０ｍｌ／ｍｉｎ）して研磨作業を行った。 A polishing test was performed using the polishing pad and the underlay described above. In this polishing test, the polishing pad underlay of this embodiment was adhered and fixed to a surface plate (outer diameter 800 mm, manufactured by SUS) of a polishing apparatus shown in FIG. 3 with a rubber-based adhesive. Then, after a polishing pad was adsorbed and fixed on the underlay, a silicon wafer (φ8 inch) was polished as a member to be polished. In the polishing operation, the silicon wafer was rotated while being pressed on the polishing layer, and at the same time, polishing slurry was dropped onto the polishing layer (flow rate 150 ml / min) to perform the polishing operation.
研磨スラリーは、研磨粒子としてコロイダルシリカを含む市販の研磨剤（商品名Ｇｌａｎｚｏｘ、株式会社フジミインコーポレーテッド製）を純水と界面活性剤で希釈したものを使用した（研磨剤：純水：界面活性剤＝７０：２５：５）。この研磨スラリーは、粘度０．７ｍＰａ・ｓであった。 As the polishing slurry, a commercially available polishing agent containing colloidal silica as an abrasive particle (trade name Granzox, manufactured by Fujimi Incorporated) diluted with pure water and a surfactant was used (polishing agent: pure water: surfactant). Agent = 70: 25: 5). This polishing slurry had a viscosity of 0.7 mPa · s.
その他の研磨条件は、下記の通りとした。
・研磨圧力：０．１６３ｋｇｆ／ｃｍ2
・研磨パッドの回転速度：４５ｒｐｍ
・被研磨部材の回転速度：４７ｒｐｍ
・ヘッドの揺動速度：２５０ｍｍ／ｍｉｎ
・研磨枚数、研磨時間：２００枚のウエハを１枚あたり３ｍｉｎ研磨処理
Other polishing conditions were as follows.
Polishing pressure: 0.163 kgf / cm 2
・ Rotating speed of polishing pad: 45rpm
・ Rotation speed of the member to be polished: 47 rpm
-Head swing speed: 250 mm / min
・ Number of polishing and polishing time: 200 wafers are polished for 3 minutes per wafer
上記の各件間時間での研磨作業後、研磨パッドと定盤との密着状態を目視にて確認し、研磨パッドのズレや剥離の有無を検討した。その結果、２００枚のウエハを研磨した後でも研磨パッドのズレや剥離は観察されなかった。また、研磨作業後のウエハを純水で洗浄し乾燥させた後、被研摩面を観察したところ顕著な傷は全く観察されなかった。 After the polishing operation at the time between the above cases, the contact state between the polishing pad and the surface plate was visually confirmed, and the presence or absence of deviation or peeling of the polishing pad was examined. As a result, no polishing pad displacement or peeling was observed even after 200 wafers were polished. Further, after the polished wafer was washed with pure water and dried, the polished surface was observed, and no remarkable scratch was observed.
比較例：本実施形態の研磨パッド用の下敷の効果を確認するため、従来と同様、下敷を使用せずに研磨パッドを定盤に固定して研磨試験を行った。このとき、上記と同様の研磨条件で研磨したところ、５０枚のウエハを研磨した後までは問題なかった。しかし、５０枚を超えたあたりから研磨パッドのズレが生じ、その後も部分的な剥がれが生じた。よって、本発明における下敷の効果が確認された。 Comparative Example : In order to confirm the effect of the underlay for the polishing pad of this embodiment, the polishing pad was fixed to a surface plate without using the underlay, and a polishing test was performed as in the conventional case. At this time, when polishing was performed under the same polishing conditions as described above, there was no problem until after 50 wafers were polished. However, the polishing pad was displaced from around 50 sheets, and partial peeling occurred thereafter. Therefore, the effect of the underlay in the present invention was confirmed.
以上説明したように、本発明に係る研磨パッド用の下敷は、従来の吸着層を有する研磨パッドによる研磨作業において、研磨パッドのズレや剥離を抑制する補助部材として作用する。本発明によれば、長時間の研磨作業においても、研磨パッドの固定状態を維持することができる。本発明は、大径化、大面積化が進むウエハやディスプレイパネルに対しても、高精度な研磨面を形成することができる。 As described above, the underlay for a polishing pad according to the present invention functions as an auxiliary member that suppresses displacement and peeling of the polishing pad in a polishing operation using a polishing pad having a conventional adsorption layer. According to the present invention, the fixed state of the polishing pad can be maintained even during a long polishing operation. The present invention can form a highly accurate polished surface even for wafers and display panels whose diameters and areas are increasing.
Claims (7)
前記研磨パッドと接する面上に、下敷の外縁に沿った環状溝が少なくとも１本形成されており、
更に、最外縁側に形成された前記環状溝から下敷の外縁方向に延び、外縁端部で開口を有する排出溝が少なくとも１本形成された、研磨パッド用の下敷。 When fixing the polishing pad to the surface plate, a lamellar underlay placed between the polishing pad and the surface plate,
On the surface in contact with the polishing pad, at least one annular groove along the outer edge of the underlay is formed,
Furthermore, the underlay for the polishing pad, wherein at least one discharge groove extending in the outer edge direction of the underlay from the annular groove formed on the outermost edge side and having an opening at the outer edge is formed.
研磨パッドの前記吸着層は、両末端にのみビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン、両末端及び側鎖にビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーン、末端にのみビニル基を有する分岐状ポリオルガノシロキサンからなるシリコーン、及び末端及び側鎖にビニル基を有する分岐状ポリオルガノシロキサンからなるシリコーンから選ばれる少なくとも１種のシリコーンを架橋させてなる組成物からなるものであり、
前記定盤に請求項１〜請求項６のいずれかに記載の研磨パッド用の下敷を固定した後、前記下敷に前記研磨パッドを固定して研磨する研磨方法。
In a polishing method of fixing a polishing pad comprising a polishing layer and an adsorption layer to a surface plate and sliding a member to be polished on the polishing layer of the polishing pad,
The adsorbing layer of the polishing pad is composed of a silicone made of linear polyorganosiloxane having vinyl groups only at both ends, a silicone made of linear polyorganosiloxane having vinyl groups at both ends and side chains, and vinyl only at the ends. It consists of a composition obtained by crosslinking at least one silicone selected from a silicone comprising a branched polyorganosiloxane having a group and a silicone comprising a branched polyorganosiloxane having a vinyl group at the terminal and side chain. ,
A polishing method in which the polishing pad according to any one of claims 1 to 6 is fixed to the surface plate, and then the polishing pad is fixed to the underlying pad for polishing.
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| JP2018085015A JP7026942B2 (en) | 2018-04-26 | 2018-04-26 | Underlay for polishing pad and polishing method using the underlay |
| TW108113813A TW201945120A (en) | 2018-04-26 | 2019-04-19 | Underlay for polishing pad and polishing method using the underlay |
| PCT/JP2019/017335 WO2019208605A1 (en) | 2018-04-26 | 2019-04-24 | Underlay for polishing pad, and polishing method using said underlay |
| KR1020207027228A KR102629759B1 (en) | 2018-04-26 | 2019-04-24 | Mat for polishing pad and polishing method using the mat |
| CN201980019602.2A CN111867781B (en) | 2018-04-26 | 2019-04-24 | Substrate for polishing pad and polishing method using the same |
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