JP7014421B2 - Manufacturing method of organic EL display panel and organic EL display panel - Google Patents

Description

The present disclosure relates to an organic EL display panel using an organic EL (Electroluminescence) element utilizing an electroluminescence phenomenon of an organic material, and a method for manufacturing the same.

In recent years, as a display panel used in a display device such as a digital television, an organic EL display panel in which a plurality of organic EL elements are arranged in a matrix on a substrate has been put into practical use.
In the organic EL display panel, the light emitting layer of each organic EL element and the adjacent organic EL element are generally separated by an insulating layer made of an insulating material, and in the organic EL display panel for color display, the organic EL element is used. Sub-pixels that emit light in each of the RGB colors are formed, and adjacent RGB sub-pixels are combined to form a unit pixel in color display.

The organic EL element has a basic structure in which a light emitting layer containing an organic light emitting material is arranged between a pair of electrodes, and a hole is injected into the light emitting layer by applying a voltage between the pair of electrodes during driving. It emits light as it recombines with an electron.
The top emission type organic EL element has an element structure in which a pixel electrode, an organic layer (including a light emitting layer), and a common electrode are sequentially provided on a substrate. The light from the light emitting layer is reflected by the pixel electrode made of a light-reflecting material and is emitted upward from the common electrode made of a light-transmitting material. The common electrode is often formed over the entire display pixel portion on the substrate. As the size of the organic EL display panel for use in large screen display devices such as televisions increases, the electrical resistance of the common electrodes increases, and the luminous efficiency is not sufficiently supplied due to the voltage drop in the part far from the feeding part. Is reduced, and there is a concern that uneven brightness may occur due to this.

On the other hand, for example, in Patent Document 1, the auxiliary electrode is stretched and arranged in a long shape on the common electrode (upper electrode) facing the pixel electrode on the substrate in a state of being superimposed on the common electrode. , A technique of reducing the electric resistance of the common electrode and suppressing the unevenness of brightness by making an electrical connection with the common electrode is disclosed.
When the functional layer exists between the auxiliary electrode and the common electrode, there is a problem that the contact resistance between the auxiliary electrode and the common electrode becomes high and the effect of providing the auxiliary electrode becomes insufficient. On the other hand, in Patent Document 2, for example, in Patent Document 2, a laser beam having a wavelength of 450 nm is applied to an organic functional layer laminated on an auxiliary electrode made of ITO to remove a part of the organic functional layer, and a common electrode is obtained from above. Disclosed is a manufacturing method in which a contact between a long auxiliary electrode and a common electrode is secured and an electrical connection is achieved by forming a film.

Japanese Unexamined Patent Publication No. 2001-23806 Japanese Unexamined Patent Publication No. 2007-103098

However, when a part of the organic functional layer is removed by irradiating it with laser light, if the functional layer to be removed is irradiated with laser light, the auxiliary electrode that is the base is damaged by the transmitted light, and the performance of the organic EL element deteriorates. There was a problem to do.
The present disclosure has been made in view of the above problems, and when a part of the functional layer is removed by irradiating the laser light, the influence of the laser light on the auxiliary electrode is reduced and the part of the functional layer is removed. It is an object of the present invention to provide a method for manufacturing an organic EL display panel which can be removed to secure contact between an auxiliary electrode and a common electrode.

In order to achieve the above object, in the method for manufacturing an organic EL display panel according to one aspect of the present disclosure, a substrate is prepared, a plurality of pixel electrodes are provided above the substrate, and in a row and / or column direction in a plan view. It is stretched to form one or more auxiliary electrodes made of aluminum or an aluminum alloy, a light emitting layer is formed above each of the plurality of pixel electrodes, and an organic functional layer is formed above the plurality of pixel electrodes and the auxiliary electrodes. The organic functional layer is irradiated with a laser beam having a wavelength of 200 nm or more and 380 nm or less to remove a part of the organic functional layer above the auxiliary electrode to expose a part of the auxiliary electrode. A common electrode is continuously formed above the plurality of pixel electrodes and the auxiliary electrode, and a part of the auxiliary electrode is brought into contact with the common electrode.

The method for manufacturing an organic EL display panel according to one aspect of the present disclosure reduces the influence of the laser beam on the auxiliary electrode when irradiating the laser beam to remove a part of the functional layer, and is one of the functional layers. The part can be removed. As a result, it is possible to suppress deterioration of the performance of the organic EL element, secure contact between the auxiliary electrode and the common electrode, establish an electrical connection, and suppress uneven brightness.

It is a schematic plan view which shows a part of the organic EL display panel 10 which concerns on embodiment. FIG. 3 is a schematic cross-sectional view of the organic EL display panel 10 according to the embodiment cut by A1-A1 in FIG. It is a flowchart of the manufacturing process of the organic EL display panel 10 which concerns on embodiment. (A) to (d) are schematic cross-sectional views taken at the same positions as A1-A1 in FIG. 1 showing the state in each step in the manufacture of the organic EL display panel 10. (A) to (c) are schematic cross-sectional views cut at the same positions as A1-A1 in FIG. 1 showing the state in each step in the manufacture of the organic EL display panel 10. (A) to (c) are schematic cross-sectional views cut at the same positions as A1-A1 in FIG. 1 showing the state in each step in the manufacture of the organic EL display panel 10. It is an experimental result which shows the relationship between the wavelength of light and the light absorption rate in the constituent material of an organic EL display panel 10. (A) to (c) are schematic cross-sectional views cut at the same positions as A1-A1 in FIG. 1 showing the state in each step in the manufacture of the organic EL display panel 10. (A) to (g) are schematic cross-sectional views cut at the same positions as A1-A1 in FIG. 1, showing the states in each step in the manufacture of the organic EL display panel 10. (A) to (b) are schematic cross-sectional views cut at the same position as A1-A1 in FIG. 1, showing the state in each step in the manufacture of the organic EL display panel 10. It is a schematic block diagram which shows the circuit structure of the organic EL display device 1 which concerns on Embodiment 1. FIG. It is a schematic circuit diagram which shows the circuit structure in each sub-pixel 100se of the organic EL display panel 10 used for organic EL display apparatus 1. It is a schematic plan view which shows a part of the organic EL display panel 10A which concerns on modification 1. FIG. It is a schematic plan view which shows a part of the organic EL display panel 10B which concerns on modification 2. FIG. It is a schematic plan view which shows a part of the organic EL display panel 10C which concerns on modification 3. FIG.

<< Outline of the form for carrying out the present invention≫
A method for manufacturing an organic EL display panel according to an aspect of the present disclosure, wherein a substrate is prepared, and a plurality of pixel electrodes and aluminum or aluminum are stretched in a row and / or column direction in a plan view on the substrate. One or more auxiliary electrodes made of an alloy are formed, a light emitting layer is formed above each of the plurality of pixel electrodes, and an organic functional layer is formed above the plurality of pixel electrodes and the auxiliary electrode, and the organic is formed. The functional layer is irradiated with a laser beam having a wavelength of 200 nm or more and 380 nm or less to remove a part of the organic functional layer above the auxiliary electrode to expose a part of the auxiliary electrode. A common electrode is continuously formed above the auxiliary electrode, and a part of the auxiliary electrode is brought into contact with the common electrode.

With such a configuration, when a part of the functional layer is removed by irradiating the laser light, the influence of the laser light on the auxiliary electrode can be reduced and a part of the functional layer can be removed. As a result, it is possible to suppress deterioration of the performance of the organic EL element, secure contact between the auxiliary electrode and the common electrode, establish an electrical connection, and suppress uneven brightness.
Further, in another aspect, in any of the above embodiments, in the formation of the light emitting layer, the light emitting layer may not be formed above the auxiliary electrode.

With this configuration, the thickness of the organic functional layer to be removed in laser trimming can be reduced, so the amount of debris generated by laser irradiation can be reduced, and defects will occur in the sealing in the subsequent process due to debris. It can be deterred.
In another aspect, in any of the above embodiments, the laser beam may be configured to include the third harmonic or the fourth harmonic of the YAG laser. In another aspect, in any of the above embodiments, the organic functional layer may be configured to contain any one of an oxadiazole derivative, a triazole derivative, and a phenanthroline derivative as a main component. In another aspect, in any of the above embodiments, the hole injection layer is further patterned above the plurality of the pixel electrodes and the auxiliary electrodes at the same time as the pixel electrodes and the auxiliary electrodes. It may be formed and irradiated with the laser beam to remove the portion of the hole injection layer that overlaps with a part of the organic functional layer. In another aspect, in any of the above embodiments, the hole injection layer may be configured to contain an oxide of one or more elements selected from the group consisting of silver, molybdenum, vanadium, tungsten, and nickel. ..

With this configuration, while suppressing damage to the auxiliary electrode, the hole injection layer in the portion irradiated with the laser beam is removed to make contact between the auxiliary electrode and the common electrode, and the auxiliary electrode is formed on the pixel electrode. The oxide layer can function as a hole injection layer.
In another aspect, in any one of the above embodiments, an oxide layer containing a titanium oxide, ITO or IZO is further provided above the plurality of pixel electrodes and the auxiliary electrode, and the pixel electrode and the auxiliary electrode are provided. It may be formed by patterning the outer shape at the same time as the electrode, and may be configured to remove the portion of the oxide layer that overlaps with a part of the organic functional layer by irradiating the laser beam.

With such a configuration, the oxide of the portion can be removed while suppressing damage to the auxiliary electrode, and the oxide formed on the pixel electrode can function as an electrode protection layer.
Further, in another aspect, in any one of the above embodiments, the irradiation of the laser beam to the functional layer may be performed in a vacuum atmosphere.

This is because, if laser processing is not performed in a vacuum atmosphere, the characteristics of various organic materials forming the display panel deteriorate due to the influence of oxygen and moisture in the atmosphere, and the deterioration can be prevented by such a configuration. ..
In another aspect, in any of the above embodiments, in the formation of the light emitting layer, the plurality of pixel electrodes are arranged in a matrix, and above the three continuous pixel electrodes in the column direction. When any one of the light emitting layers emitting red, blue, and green is arranged one by one for each color and the three consecutive pixel electrodes are used as the pixel electrode group, in the formation of the auxiliary electrode, the auxiliary electrodes are arranged in rows and. It may be formed by stretching between the pixel electrode group adjacent to each other in the row direction and the pixel electrode group. Further, in the removal of a part of the organic functional layer, a part of the organic functional layer located above the auxiliary electrode and extending in the elongated direction may be removed. With such a configuration, wiring resistance can be efficiently reduced.

In another aspect, in any of the above embodiments, in the formation of the auxiliary electrode, the auxiliary electrode is further formed by extending between the pixel electrode group and the pixel electrode group adjacent to each other in the row or column direction. It may be configured to be. In another aspect, in any of the above embodiments, the organic functional layer is located above the auxiliary electrode and intermittently extends along the longitudinal direction in the removal of a part of the organic functional layer. It may be configured so that a part of the above is removed.

With such a configuration, processing becomes easier as compared with the case where the auxiliary electrode is formed by stretching along the auxiliary gap. In addition, the process time can be shortened and the consumption of the laser light source can be reduced.
<< Embodiment 1 >>
Hereinafter, a method for manufacturing an organic EL display panel according to an embodiment will be described with reference to the drawings.

<Overall configuration of display panel 10>
The organic EL display panel 10 (hereinafter referred to as “display panel 10”) according to the present embodiment will be described with reference to the drawings. The drawings are schematic views, and the scale may differ from the actual ones. FIG. 1 is a schematic plan view showing a part of the organic EL display panel 10 according to the embodiment, and is a perspective view looking downward from the insulating layer 122 described later.

The display panel 10 is an organic EL display panel that utilizes the electroluminescence phenomenon of an organic compound, and is a plurality of organic substances each constituting a pixel on a substrate 100x (TFT substrate) on which a thin film transistor (TFT) is formed. The EL elements 100 are arranged in a matrix and have a top emission type configuration in which light is emitted from the upper surface. Here, in the present specification, the X direction, the Y direction, and the Z direction in FIG. 1 are the row direction, the column direction, and the thickness direction in the display panel 10, respectively.

As shown in FIG. 1, the display panel 10 is composed of a partition area 10e in which a column bank 522Y and a row bank 122X are arranged so that the substrate 100x is partitioned in a matrix to regulate the emission unit of each RGB color. .. In the present specification, the column bank 522Y and the row bank 122X are collectively referred to as an “insulating layer 122”. The partition area 10e is a region in which the organic EL element 100 is formed in each section regulated by the column bank 522Y and the row bank 122X.

Unit pixels 100e corresponding to the organic EL element 100 are arranged in a matrix in the partition area 10e (hereinafter referred to as “region 10e”) of the display panel 10. In each unit pixel 100e, 100aR that emits light in red, 100aG that emits light in green, and 100aB that emits light in blue (hereinafter, 100aR, 100aG, 100aB), which is a region that emits light by an organic compound, is "100a". (Abbreviated as)), three types of self-luminous regions 100a are formed. That is, as shown in FIG. 1, three sub-pixels 100se corresponding to each of the self-luminous regions 100aR, 100aG, and 100aB arranged in the row direction form a set to form a unit pixel 100e in color display.

Further, as shown in FIG. 1, on the display panel 10, a plurality of pixel electrodes 119 are arranged in a matrix on the substrate 100x in a state where they are separated by predetermined distances in the row and column directions, respectively. The pixel electrode 119 has a rectangular shape in a plan view and is made of a light reflecting material. The pixel electrodes 119 arranged in a matrix correspond to three self-luminous regions 100aR, G, and B arranged in order in the row direction.

In the display panel 10, the shape of the insulating layer 122 adopts a so-called line-shaped insulating layer type, and is located above the outer edge of the row direction and the region on the substrate 100x located between the outer edges of the two pixel electrodes 119 adjacent to each other in the row direction. In the above, column banks 522Y in which each row extends in the column direction (Y direction in FIG. 1) are arranged side by side in a plurality of row directions.
On the other hand, above the region on the substrate 100x located between the outer edges in the column direction and the outer edges of the two pixel electrodes 119 adjacent to each other in the column direction, a row bank 122X in which each row extends in the row direction (X direction in FIG. 1) is formed. They are arranged side by side in multiple rows. The region where the row bank 122X is formed is a non-self-luminous region 100b because organic electroluminescence does not occur in the light emitting layer 123 above the pixel electrode 119.

The gap between the adjacent row banks 522Y is defined as the gap 522z, the gap corresponding to the self-luminous region 100aR is the red gap 522zR, the gap corresponding to the self-luminous region 100aG is the green gap 522zG, and the gap corresponding to the self-luminous region 100aB is the blue gap. The auxiliary gap 522zA (hereinafter, "gap 522zR, gap 522zG, and gap 522zB" when the gap 522zR, gap 522zG, and gap 522zB are not distinguished) is set as 522zB, which is sandwiched between the blue gap 522zB and the red gap 522zR and where the auxiliary electrode 129Y described later is laid. Further, the gap between the adjacent row banks 122X in the non-self-luminous region 100b and where the auxiliary electrode 129X described later is laid is defined as the auxiliary gap 122zA.

Further, as shown in FIG. 1, in the display panel 10, a plurality of self-luminous regions 100a and non-self-luminous regions 100b are arranged alternately in a row direction along a gap 522z. The non-self-luminous region 100b is provided with a connection recess (contact hole, not shown) connecting the pixel electrode 119 and the source S ₁ of the TFT.
Further, as shown in FIG. 1, in the display panel 10, a plurality of auxiliary electrodes 129Y are continuously arranged in the auxiliary gap 522 zA between the unit pixels 100e on the substrate 100x in the column direction, and are assisted in a plan view. The contact portion 129YA, which is a part of the upper surface of the electrode 129Y, is in contact with the common electrode 125. Further, a plurality of auxiliary electrodes 129X are arranged in the auxiliary gap 122zA extending in the row direction between adjacent auxiliary electrodes 129Y over the unit pixels 100e on the substrate 100x, and are arranged on the upper surface of the auxiliary electrodes 129X in a plan view. The contact portion 129XA, which is a part, is in contact with the common electrode 125. In the present specification, the auxiliary electrode 129Y and the auxiliary electrode 129X are collectively referred to as “auxiliary electrode 129”.

Further, as shown in FIG. 1, in the display panel 10, one of the red, blue, and green light emitting layers 123 is arranged above the three continuous pixel electrodes 119 in the column direction, one for each color. Three pixel electrodes 119 that are continuous in the row direction corresponding to the unit pixel 100e are used as a pixel electrode group, and a part of the upper surfaces of the auxiliary electrodes 129X and 129Y that come into contact with the common electrode 125 are part of the auxiliary electrodes 129X and 129Y, respectively. When defined as the contact portion 129XA and 129YA, the contact portion 129XA extending in the elongated direction of the auxiliary electrode 129X and the auxiliary electrode 129X extends along the auxiliary gap 122zA in the row direction between the adjacent pixel electrode group and the pixel electrode group. The contact portion 129YA extending in the long direction of the auxiliary electrode 129Y and the auxiliary electrode 129Y is arranged so as to extend along the gap 522zA in the row direction between the adjacent pixel electrode group and the pixel electrode group. .. With such a configuration, the wiring resistance of the auxiliary electrode 129 can be efficiently reduced.

<Structure of each part of display panel 10>
The configuration of the organic EL element 100 in the display panel 10 will be described with reference to FIG. FIG. 2 is a schematic cross-sectional view taken along the line A1-A1 in FIG.
In the display panel 10 according to the present embodiment, a substrate (TFT substrate) in which a thin film transistor is formed downward in the Z-axis direction is configured, and an organic EL element portion is configured on the substrate (TFT substrate).

[Substrate 100x]
The substrate 100x is a support member for the display panel 10, and has a base material (not shown) and a thin film transistor layer (not shown) formed on the base material.
The base material is a support member of the display panel 10 and has a flat plate shape. As the material of the base material, a material having an electrically insulating property, for example, a glass material, a resin material, a semiconductor material, a metal material coated with an insulating layer, or the like can be used.

The TFT layer is composed of a plurality of TFTs formed on the upper surface of the substrate and _a plurality of wirings (connecting the source S1 of the TFT and the corresponding pixel electrode 119). The TFT electrically connects the corresponding pixel electrode 119 and the external power supply in response to a drive signal from the external circuit of the display panel 10, and has a multilayer structure such as an electrode, a semiconductor layer, and an insulating layer. The wiring electrically connects the TFT, the pixel electrode 119, the external power supply, the external circuit, and the like.

[Flatration layer 118]
A flattening layer 118 is provided on the base material and on the upper surface of the TFT layer. The flattening layer 118 located on the upper surface of the substrate 100x flattens the upper surface of the substrate 100x having irregularities by the TFT layer, fills the space between the wiring and the TFT, and electrically insulates the space between the wiring and the TFT. There is.

In order to connect the pixel electrode 119 and the wiring connected to the source S ₁ of the corresponding pixel to the flattening layer 118, a contact hole (not) in a part of the upper part of the wiring corresponding to the pixel electrode 119. (Illustrated) has been established.
[Pixel electrode 119]
As shown in FIG. 2, a pixel electrode 119 is provided on the flattening layer 118 located on the upper surface of the region 10e in the substrate 100x in units of sub-pixels 100se.

The pixel electrode 119 is for supplying carriers to the light emitting layer 123, and when it functions as an anode, for example, supplies holes to the light emitting layer 123. Further, since the display panel 10 is a top emission type, the pixel electrode 119 has light reflectivity. The shape of the pixel electrode 119 is, for example, a flat plate having a substantially rectangular shape. A connection recess (contact hole (not shown)) of the pixel electrode 119 in which a part of the pixel electrode 119 is recessed in the substrate 100x direction is formed on the contact hole (not shown) of the flattening layer 118. At the bottom of the connection recess, the pixel electrode 119 and the wiring connected to the source S ₁ of the corresponding pixel are connected.

[Auxiliary electrode 129]
The auxiliary electrode 129Y is extended and arranged in the row direction on the flattening layer 118 in the auxiliary gap 522 zA of the row bank 522Y. The auxiliary electrode 129Y is an auxiliary electrode for reducing the electric resistance of the common electrode 125 by electrically connecting the auxiliary electrode 129Y to the common electrode 125 through the opening GP provided in the hole injection layer 120A and the electron transport layer 124. It is a layer. Further, as shown in FIG. 1, the auxiliary electrodes 129X are arranged so as to extend in the row direction so as to connect between the auxiliary electrodes 129Y adjacent to the upper surface of the flattening layer 118 in the auxiliary gap 122zA between the row banks 122X. There is. Similarly, the auxiliary electrode 129X is also an auxiliary electrode for reducing the electrical resistance of the common electrode 125 by electrically connecting to the common electrode 125 through the openings provided in the hole injection layer 120A and the electron transport layer 124. It is an electrode layer. In the present specification, when the auxiliary electrode 129Y and the auxiliary electrode 129X are not distinguished, the auxiliary electrode 129 is used.

Here, the thickness of the auxiliary electrode 129 is preferably 100 nm or more and 1000 nm or less in order to obtain a sufficient cross-sectional area for assisting the feeding. In the present embodiment, the thickness of the auxiliary electrode 129 is set to, for example, 400 nm.
The width of the auxiliary electrode 129 is preferably as narrow as possible in order to widen the light emitting area. It is preferably narrower than the width of the sub-pixel 100se in the X direction. It is preferable that the width of the auxiliary electrode 129 is 30 μm or more and 40 μm or less, and the width of the opening GP after the auxiliary electrode 129 is trimmed is about 10 μm. Further, when the width of the auxiliary electrode 129 is expanded in order to reduce the wiring resistance, the width of the auxiliary electrode 129X extending in the row direction is larger than the width of the auxiliary electrode 129Y extending in the column direction. Sometimes it has little effect on the light emitting area.

[Hole injection layer 120]
As shown in FIG. 2, the hole injection layer 120 is laminated on the pixel electrode 119 and above. The hole injection layer 120 has a function of transporting holes injected from the pixel electrode 119 to the hole transport layer 121.
The hole injection layer 120 includes a hole injection layer 120A made of a metal oxide formed on the pixel electrode 119 and the auxiliary electrode 129 in this order from the substrate 100x side, and hole injection in the gap 522zR, the gap 522zG, and the gap 522zB described later. It includes a hole injection layer 120B made of an organic substance laminated on each of the layers 120A. In the gap 522zA, a part of the hole injection layer 120A is trimmed, and an opening GP is opened in the hole injection layer 120A.

In the present embodiment, in the gap 522zR, the gap 522zG, and the gap 522zB, which will be described later, the hole injection layer 120B is linearly provided so as to extend in the column direction. The hole injection layer 120B is not provided in the auxiliary gap 522zA.
[Bank 122]
As shown in FIG. 2, a bank made of an insulating material is formed so as to cover the edge of the pixel electrode 119 and the hole injection layer 120. The banks include a column bank 522Y extending in the column direction and juxtaposed in the row direction, and a row bank 122X extending in the row direction and juxtaposed in the column direction (hereinafter, row bank). When 122X and column bank 522Y are not distinguished, it is referred to as "bank 122").

The shape of the column bank 522Y is a linear shape extending in the column direction, and the cross section cut in parallel with the row direction is a forward-tapered trapezoidal shape with an upward taper. The column bank 522Y defines the outer edge in the row direction of the light emitting layer 123 formed by blocking the flow of the ink containing the organic compound which is the material of the light emitting layer 123 in the row direction. The column bank 522Y defines the outer edge of the light emitting region 100a of each sub-pixel 100se in the row direction by the base in the row direction.

The shape of the row bank 122X is a linear shape extending in the row direction, and the cross section cut in parallel with the column direction is a forward-tapered trapezoidal shape with an upward taper. The row banks 122X are provided in the row direction so as to penetrate each column bank 522Y, and each has an upper surface lower than the upper surface 522Yb of the column bank 522Y. Therefore, the row bank 122X and the column bank 522Y form an opening corresponding to the self-luminous region 100a.

[Hall transport layer 121]
As shown in FIG. 2, the hole transport layer 121 is laminated on the hole injection layer 120 in the gap 522zR, 522zG, 522zB. The hole transport layer 121 is not provided in the auxiliary gap 522zA. Further, the hole transport layer 121 is also laminated on the hole injection layer 120 in the row bank 122X (not shown). The hole transport layer 121 is in contact with the hole injection layer 120B. The hole transport layer 121 has a function of transporting holes injected from the hole injection layer 120 to the light emitting layer 123.

In the present embodiment, in the gap 522z described later, the hole transport layer 121 is linearly provided so as to extend in the column direction, similarly to the hole injection layer 120B.
[Light emitting layer 123]
As shown in FIG. 2, a light emitting layer 123 is laminated on the hole transport layer 121. The light emitting layer 123 is a layer made of an organic compound, and has a function of emitting light by recombination of holes and electrons inside. Within the gap 522zR, the gap 522zG, and the gap 522zB defined by the row bank 522Y, the light emitting layer 123 is linearly provided so as to extend in the row direction. The light emitting layer 123 is not provided in the auxiliary gap 522zA. Light emitting layers 123R, 123G, and 123B that emit light in each color are formed in the red gap 522zR, the green gap 522zG, and the blue gap 522zB, respectively.

In the sub-pixel 100se of each color, a light emitting layer 123 of each color exists between the pixel electrode 119 and the common electrode 125, and an optical resonator structure is formed in which light from the light emitting layer 123 is resonated and emitted from the common electrode 125 side. The optical distance between the upper surface of the light emitting layer 123 and the upper surface of the pixel electrode 119 is set according to the wavelength of the light emitted from each of the light emitting layers 123R, 123G, and 123B, so that the optical components corresponding to each color are strengthened. An optical resonator structure is formed.

Since the light emitting layer 123 emits light only at the portion where the carrier is supplied from the pixel electrode 119, the electroluminescence phenomenon of the organic compound does not occur in the range where the row bank 122X which is an insulator exists between the layers. Therefore, in the light emitting layer 123, the portion without the row bank 122X is the self-luminous region 100a, and the portion above the side surface and the upper surface of the row bank 122X is the non-self-luminous region.

[Electron transport layer 124]
As shown in FIG. 2, the electron transport layer 124 is laminated so as to cover the light emitting layer 123 in the gap 522z defined by the row bank 522Y and the row bank 522Y. The electron transport layer 124 is formed in a continuous state over at least the entire display area of the display panel 10. The electron transport layer 124 has a function of transporting electrons from the common electrode 125 to the light emitting layer 123 and limiting the injection of electrons into the light emitting layer 123. The electron transport layer 124 includes an electron transport layer 124A made of a metal oxide, a fluoride, or the like in this order from the substrate 100x side, and an electron transport layer 124B having an organic substance as a main component laminated on the electron transport layer 124A (hereinafter,). In the above, when the electron transport layers 124A and 124B are generically referred to as "electron transport layer 124"). In the gap 522zA, a part of the electron transport layer 124 is trimmed, and an opening GP is opened in the electron transport layer 124.

[Common electrode 125]
As shown in FIG. 2, a common electrode 125 is formed on the electron transport layer 124. The common electrode 125 is a common electrode for each light emitting layer 123. The common electrode 125A is paired with the pixel electrode 119 and sandwiches the light emitting layer 123 to form an energization path. The common electrode 125 supplies carriers to the light emitting layer 123, and when it functions as a cathode, for example, supplies electrons to the light emitting layer 123.

The common electrode 125 includes a common electrode 125A containing a metal as a main component in order from the substrate 100x side, and a common electrode 125B made of a metal oxide laminated on the common electrode 125A (hereinafter, the common electrodes 125A and 125B are included. When generically referred to, it is referred to as "common electrode 125").
Regarding the stacking order of the common electrodes 125A and 125B, the order of 125A and 125B may be exchanged for optical adjustment.

[Sealing layer 126]
The sealing layer 126 is laminated so as to cover the common electrode 125. The sealing layer 126 is for suppressing deterioration of the light emitting layer 123 when it comes into contact with moisture, air, or the like. The sealing layer 126 is provided so as to cover the upper surface of the common electrode 125. In addition, it is necessary to have high translucency in order to ensure good light extraction as a display.

[Joint layer 127]
A color filter substrate 131 having a color filter layer 132 formed on a main surface on the lower side in the Z-axis direction of the upper substrate 130 is arranged above the sealing layer 126 in the Z-axis direction, and is joined by the bonding layer 127. There is. The bonding layer 127 has a function of bonding the back panel composed of each layer from the substrate 100x to the sealing layer 126 and the color filter substrate 131, and preventing each layer from being exposed to moisture or air.

[Upper board 130]
A color filter substrate 131 having a color filter layer 132 formed on the upper substrate 130 is installed and bonded on the bonding layer 127. Since the display panel 10 is a top emission type for the upper substrate 130, a light transmissive material such as a cover glass or a transparent resin film is used for the upper substrate 130. Further, the upper substrate 130 can improve the display panel 10, the rigidity, and prevent the intrusion of moisture, air, and the like.

[Color filter layer 132]
A color filter layer 132 is formed on the upper substrate 130 at a position corresponding to each color self-luminous region 100a of the pixel. The color filter layer 132 is a transparent layer provided for transmitting visible light having wavelengths corresponding to R, G, and B, and has a function of transmitting light emitted from each color pixel and correcting its chromaticity. Have. For example, in this example, the red, green, and blue filter layers 132R and 132G are above the self-luminous region 100aR in the red gap 522zR, the self-luminous region 100aG in the green gap 522zG, and the self-luminous region 100aB in the blue gap 522zB. , 132B are formed respectively.

[Shading layer 133]
The light-shielding layer 133 is formed on the upper substrate 130 at a position corresponding to the boundary between the light emitting regions 100a of each pixel. The light-shielding layer 133 is a black resin layer provided so as not to transmit visible light having wavelengths corresponding to R, G, and B, and is made of, for example, a resin material containing a black pigment having excellent light absorption and light-shielding properties.

<Constituent materials of each part>
An example is shown of the constituent materials of each part shown in FIGS. 1 and 2.
[Substrate 100x (TFT substrate)]
Examples of the base material 100p include glass substrates, quartz substrates, silicon substrates, molybdenum sulfide, copper, zinc, aluminum, stainless steel, magnesium, iron, nickel, gold, silver and other metal substrates, gallium arsenic groups and other semiconductor substrates, and the like. A plastic substrate or the like can be adopted.

The TFT layer has a TFT circuit formed on the base material 100p, an inorganic insulating layer (not shown) formed on the TFT circuit, and a flattening layer 118. The TFT circuit has a multilayer structure such as an electrode, a semiconductor layer, and an insulating layer formed on the upper surface of the base material.
Known materials can be used for the gate electrode, the gate insulating layer, the channel layer, the channel protection layer, the source electrode, the drain electrode, and the like constituting the TFT.

As the material of the flattening layer 118 located on the upper surface of the substrate 100x, for example, an organic compound such as a polyimide resin, an acrylic resin, a siloxane resin, or a novolak type phenol resin can be used.
[Pixel electrode 119]
The pixel electrode 119 is made of a metal material. In the case of the display panel 10 according to the present embodiment of the top emission type, the chromaticity of the emitted light is adjusted and the brightness is increased by setting the thickness optimally and adopting the optical resonator structure. , The surface portion of the pixel electrode 119 has high reflectivity. In the display panel 10 according to the present embodiment, the pixel electrode 119 may have a structure in which a plurality of films selected from a metal layer, an alloy layer, and a transparent conductive film are laminated. The metal layer can be made of, for example, a metal material containing aluminum (Al) as a material having low sheet resistance and high light reflectivity. The aluminum (Al) alloy has a high reflectance of 80 to 95% and a small electrical resistivity of 2.82 × 10 ^-8 (10 nΩm), and is suitable as a material for the pixel electrode 119. Further, from the viewpoint of cost, it is preferable to use a metal layer or an alloy layer containing aluminum as a main component.

As the metal layer, in addition to a metal layer such as an aluminum alloy, for example, silver or an alloy containing silver can be used from the viewpoint of high reflectance.
When the pixel electrode 119 is made of aluminum or an aluminum alloy, an aluminum oxide layer is formed on the surface.
As the constituent material of the transparent conductive layer, for example, indium tin oxide (ITO), indium zinc oxide (IZO), or the like can be used.

[Auxiliary electrode 129]
The auxiliary electrode 129 is an auxiliary electrode layer for reducing the electric resistance of the common electrode 125 by making an electrical connection with the common electrode 125. Therefore, the auxiliary electrode 129 can be composed of, for example, a metal layer or an alloy layer containing aluminum (Al) as a main component, as a material having a low sheet resistance. For example, the aluminum (Al) alloy has a small electrical resistivity of 2.82 × 10 ^-8 (10 nΩm), and is suitable as a material for the auxiliary electrode 129 from the viewpoint of cost.

[Hole injection layer 120]
The hole injection layer 120A is a layer made of an oxide such as silver (Ag), molybdenum (Mo), vanadium (V), tungsten (W), and nickel (Ni). When the hole injection layer 120A is composed of an oxide of a transition metal, a plurality of oxidation numbers are taken, so that a plurality of levels can be taken, and as a result, hole injection becomes easy and the drive voltage is reduced. be able to.

As described above, as the hole injection layer 120B, a coating film made of an organic polymer solution of a conductive polymer material such as PEDOT (a mixture of polythiophene and polystyrene sulfonic acid) can be used.
[Bank 122]
The bank 122 is formed by using an organic material such as a resin and has an insulating property. Examples of the organic material used for forming the bank 122 include acrylic resin, polyimide resin, novolak type phenol resin and the like. The bank 122 is preferably resistant to organic solvents. More preferably, it is desirable to use an acrylic resin. This is because it has a low refractive index and is suitable as a reflector.

Alternatively, when an inorganic material is used for the bank 122, for example, silicon oxide (SiO) is preferably used from the viewpoint of the refractive index. Alternatively, it is formed by using an inorganic material such as silicon nitride (SiN) or silicon oxynitride (SiON).
Further, since the bank 122 may be subjected to etching treatment, baking treatment, etc. during the manufacturing process, the bank 122 is formed of a material having high resistance to such treatments so as not to be excessively deformed or deteriorated. Is preferable.

In addition, the surface can be treated with fluorine in order to make the surface water repellent. Further, a material containing fluorine may be used for forming the bank 122. Further, in order to reduce the water repellency on the surface of the bank 122, the bank 122 may be subjected to a baking treatment at a low temperature by irradiating the bank 122 with ultraviolet rays.
[Hall transport layer 121]
The hole transport layer 121 is, for example, polyfluorene or a derivative thereof, a polymer compound such as polyarylamine which is an amine-based organic polymer or a derivative thereof, or TFB (poly (9, 9-di-n-octylfluorene-). Alt- (1,4-phenylene-((4-sec-butylphenyl) imino) -1,4-phenylene)) and the like can be used.

[Light emitting layer 123]
As described above, the light emitting layer 123 has a function of generating an excited state and emitting light by injecting holes and electrons and recombining them. As the material used for forming the light emitting layer 123, it is necessary to use a light emitting organic material that can form a film by using a wet printing method.
Specifically, for example, an oxinoid compound, a perylene compound, a coumarin compound, an azacmarin compound, an oxazole compound, an oxadiazole compound, a perinone compound, and pyrolopyrrole described in Japanese Patent Application Laid-Open No. 5-163488. Compounds, naphthalene compounds, anthracene compounds, fluorene compounds, fluoranthene compounds, tetracene compounds, pyrene compounds, coronen compounds, quinolone compounds and azaquinolone compounds, pyrazoline derivatives and pyrazolone derivatives, rhodamine compounds, chrysene compounds, phenanthrene compounds, cyclopentadiene compounds, stylben compounds. , Diphenylquinone compound, styryl compound, butadiene compound, dicyanomethylenepyran compound, dicyanomethylenethiopyran compound, fluorescein compound, pyrylium compound, thiapyrylium compound, serenapyrilium compound, tellropyrylium compound, aromatic aldaziene compound, oligophenylene compound, thioxanthene Formed from fluorescent substances such as compounds, anthracene compounds, cyanine compounds, acrydin compounds, metal complexes of 8-hydroxyquinoline compounds, metal complexes of 2-bipyridine compounds, complexes of shift salts and Group III metals, oxine metal complexes, and rare earth complexes. It is preferable to be done.

[Electron transport layer 124]
An organic material having high electron transportability is used for the electron transport layer 124. The electron transport layer 124A may include a layer formed of sodium fluoride. Examples of the organic material used for the electron transport layer 124B include π-electron low molecular weight organic materials such as an oxadiazole derivative (OXD), a triazole derivative (TAZ), and a phenanthroline derivative (BCP, Bphen).

Further, the electron transport layer 124B may include a layer formed by doping an organic material having a high electron transport property with a dope metal selected from an alkali metal or an alkaline earth metal.
[Common electrode 125]
The common electrode 125A is formed by using an electrode obtained by thinning silver (Ag), aluminum (Al), or the like.

For the common electrode 125B, a conductive material having light transmittance is used. For example, it is formed using indium tin oxide (ITO), zinc indium oxide (IZO), or the like.
[Sealing layer 126]
The sealing layer 126 is formed by using a translucent material such as silicon nitride (SiN) or silicon oxynitride (SiON). Further, a sealing resin layer made of a resin material such as an acrylic resin or a silicon resin may be provided on a layer formed by using a material such as silicon nitride (SiN) or silicon oxynitride (SiON).

In the case of the top emission type, the sealing layer 126 needs to be formed of a light-transmitting material.
[Joint layer 127]
The material of the bonding layer 127 is, for example, a resin adhesive or the like. As the bonding layer 127, a translucent resin material such as an acrylic resin, a silicon resin, or an epoxy resin can be adopted.

[Upper board 130]
As the upper substrate 130, for example, a translucent material can be adopted for a glass substrate, a quartz substrate, a plastic substrate, or the like.
[Color filter layer 132]
As the color filter layer 132, a known resin material (for example, a color resist manufactured by JSR Corporation as a commercially available product) or the like can be adopted.

[Shading layer 133]
The light-shielding layer 133 is made of a resin material containing an ultraviolet curable resin (for example, an ultraviolet curable acrylic resin) as a main component and a black pigment added thereto. As the black pigment, for example, a light-shielding material such as a carbon black pigment, a titanium black pigment, a metal oxide pigment, or an organic pigment can be adopted.

<Manufacturing method of display panel 10>
The manufacturing method of the display panel 10 will be described with reference to FIGS. 3 to 10. FIG. 3 is a flowchart of the manufacturing process of the organic EL display panel 10 according to the embodiment. Each figure in FIGS. 4 to 10 is a schematic cross-sectional view cut at the same position as A1-A1 in FIG. 1 showing a state in each step in the manufacture of the display panel 10.

[Preparation of substrate 100x]
A substrate 100x on which a plurality of TFTs and wirings are formed is prepared. The substrate 100x can be manufactured by a known TFT manufacturing method (step S1 in FIG. 3 and FIG. 4A).
[Formation of flattening layer 118]
The above-mentioned constituent material (photosensitive resin material) of the flattening layer 118 is applied as a photoresist so as to cover the substrate 100x, and the surface is flattened to form the flattening layer 118 (step in FIG. 3). S2, FIG. 4 (b)).

[Formation of pixel electrode 119 and hole injection layer 120A]
Next, the pixel electrode 119 and the hole injection layer 120A are formed (FIG. 3: step S3). A metal film 119x for an electrode for forming a pixel electrode 119c is formed by laminating metal films using a vapor phase growth method such as a sputtering method or a vacuum vapor deposition method, and then patterning is performed using a photolithography method and an etching method. It is done in. Specifically, first, after forming the flattening layer 118, the surface of the flattening layer 118 is subjected to a dry etching treatment to perform pre-film formation cleaning.

Next, after cleaning the surface of the flattening layer 118 before film formation, the surface of the flattening layer 118 is subjected to a metal film 119x vapor phase growth method for a pixel electrode for forming a pixel electrode 119 and an auxiliary electrode 129. A film is formed (FIG. 4 (c)). In this example, a film made of aluminum or an alloy containing aluminum as a main component is formed by a sputtering method.
Further, after pre-cleaning the surface of the metal film 119x, a metal layer 120A'for the hole injection layer 120A for forming the hole injection layer 120A is formed on the surface of the metal film 119x by the vapor phase growth method. (Fig. 4 (c)). In this example, tungsten is formed by a sputtering method.

Then, after applying a photoresist layer FR made of a photosensitive resin or the like, a photomask PM having a predetermined opening is placed, and ultraviolet rays are irradiated from above to expose the photoresist to the photoresist. The pattern of the photomask is transferred (FIG. 4 (d)). Next, the photoresist layer FR is patterned by development.
Then, the metal layer 120A'is subjected to a dry etching process through the patterned photoresist layer FR to perform patterning to form the hole injection layer 120A.

Subsequently, the metal film 119x is subjected to wet etching treatment through the patterned photoresist layer FR and the hole injection layer 120A to perform patterning, and the pixel electrode 119 and the auxiliary electrode 129 are formed.
The reason why the dry etching process is performed in the formation of the hole injection layer 120A is that, for example, there is a large difference in wet etching rate between the metal layer 120A'made of a tungsten oxide film and the metal film 119x made of an aluminum alloy, for example. Since it is difficult to process all at once, dry etching with argon gas or the like is used for tungsten oxide, and wet etching is used for the aluminum alloy in this embodiment, but this is not the case.

In the manufacturing method of the present embodiment, the hole injection layer 120A is formed and fired under predetermined conditions to form a hole injection layer 120 made of a tungsten oxide film containing tungsten oxide having an oxygen defect structure, as described above. It is configured to form an occupied level.
Finally, the photoresist layer FR is peeled off to form a laminate of the pixel electrodes 119 and the hole injection layer 120A having the same outer shape (FIG. 5A).

[Formation of bank 122]
After forming the hole injection layer 120A of the hole injection layer 120, the bank 122 is formed so as to cover the hole injection layer 120A. In the formation of the bank 122, the row bank 122X is first formed, and then the column bank 522Y is formed so as to form the gap 522z (FIG. 3: step S4, FIG. 5 (b)).

First, in the formation of the row bank 122, a film made of a constituent material (for example, a photosensitive resin material) of the row bank 122X is laminated and formed on the hole injection layer 120A by using a spin coating method or the like. Then, the resin film is patterned to form the row bank 122X.
The patterning of the row bank 122X is performed by exposing the resin film above the resin film using a photomask, and performing a developing step and a firing step (about 230 ° C., about 60 minutes).

Next, in the step of forming the column bank 522Y, a film made of a constituent material (for example, a photosensitive resin material) of the column bank 522Y is laminated and formed on the hole injection layer 120A and the row bank 122X by using a spin coating method or the like. do. Then, the gap 522z is formed by arranging a mask above the resin film and exposing it, and then developing the resin film to pattern the resin film to open the gap 522z and form the row bank 522Y.

Specifically, in the step of forming the row bank 522Y, first, a photosensitive resin film made of an organic photosensitive resin material, for example, an acrylic resin, a polyimide resin, a novolak type phenol resin, or the like is formed, and then dried. Then, after volatilizing the solvent to some extent, a photoresist with a predetermined opening is layered, and ultraviolet irradiation is performed on the photoresist to expose the photoresist made of a photosensitive resin or the like, and the photoresist has the photoresist. Transfer the pattern.

Next, an insulating layer in which the row bank 522Y is patterned by developing a photosensitive resin is formed by firing (about 230 ° C., about 60 minutes).
Here, as described above, the hole injection layer 120A is formed by forming a film made of a metal (for example, tungsten) by a vapor phase growth method such as a sputtering method or a vacuum vapor deposition method, and then using a photolithography method and an etching method. Although it is patterned in pixel units, the metal is oxidized in the firing step for the row bank 122X and the column bank 522Y to complete the hole injection layer 120A.

[Formation of organic functional layer]
The hole injection layer 120B, the hole transport layer 121, and the light emitting layer 123 are laminated and formed in this order on the hole injection layer 120A formed in the gap 522z defined by the column bank 522Y including the row bank 122X (FIG. 3). : Steps S5, 6, FIG. 5 (c), FIG. 6 (a)).
The hole injection layer 120B uses an inkjet method to apply an ink containing a conductive polymer material such as PEDOT (a mixture of polythiophene and polystyrene sulfonic acid) into the gap 522z defined by the row bank 522Y, and then volatilize the solvent. Let it be removed. Alternatively, it is done by firing. The hole injection layer 120B is not provided in the auxiliary gap 522zA. After that, patterning may be performed for each pixel by using a photolithography method and an etching method.

The hole transport layer 121 uses a wet process by an inkjet method or a gravure printing method to apply an ink containing a constituent material in the gap 522z defined by the row bank 522Y, and then volatilize or remove the solvent or bake it. (Fig. 5 (c)). The method of applying the ink of the hole transport layer 121 in the gap 522z is the same as the method of the hole injection layer 120B described above. The hole transport layer 121 is not formed in the auxiliary gap 522zA.

The light emitting layer 123 is formed by applying an ink containing a constituent material in the gap 522z defined by the row bank 522Y and then firing it by using an inkjet method (FIG. 6A). Specifically, the substrate 100x is placed on the operation table of the droplet ejection device with the row bank 522Y along the Y direction, and a plurality of nozzle holes are arranged in a line along the Y direction. This is performed by landing the ink droplet 18 from each nozzle hole aiming at the landing target set in the gap 522z between the row banks 522Y while moving the head 301 in the X direction relative to the substrate 100x. even here. The light emitting layer 123 is not formed in the auxiliary gap 522zA.

Further, in this step, the gap 522z, which is the sub-pixel forming region, is filled with the inks 123RI, 123GI, and 123BI containing the material of any of R, G, and B organic light emitting layers by the inkjet method, and the filled ink is depressurized. Light emitting layers 123R, 123G, 123B are formed by drying underneath and baking. At this time, in the application of the ink of the light emitting layer 123, first, the solution for forming the light emitting layer 123 is applied by using the droplet ejection device.

After the application of the ink for forming any of the red light emitting layer, the green light emitting layer, and the blue light emitting layer to the substrate 100x is completed, the ink of another color is applied to the substrate, and then the substrate is applied. The process of applying the third color ink is repeated, and the three color inks are sequentially applied. As a result, the red light emitting layer, the green light emitting layer, and the blue light emitting layer are repeatedly formed side by side in the horizontal direction of the paper surface in the figure on the substrate 100x.

The method for forming the hole injection layer 120B, the hole transport layer 121, and the light emitting layer 123 of the hole injection layer 120 is not limited to the above method, and methods other than the inkjet method and the gravure printing method, such as the dispenser method and the nozzle coating method. , Ink may be dropped and applied by a known method such as spin coating method, intaglio printing, letterpress printing and the like.
[Formation of electron transport layer 124]
After forming the light emitting layer 123, the electron transport layer 124 is formed over the entire light emitting area (display area) of the display panel 10 by a vacuum vapor deposition method or the like (FIG. 3: step S7, FIG. 6 (b)). The reason for using the vacuum vapor deposition method is that it does not damage the light emitting layer 123, which is an organic film, and in the vacuum vapor deposition method performed by increasing the vacuum, the molecules to be deposited are formed in a straight line in the direction perpendicular to the substrate. Ru. The electron transport layer 124A is formed by forming a metal oxide or fluoride on the light emitting layer 123 by a vacuum vapor deposition method or the like, for example, with a film thickness of 1 nm or more and 10 nm or less. An electron transport layer 124B is formed on the electron transport layer 124A by a co-deposited method of an organic material and a metal material, for example, with a film thickness of 10 nm or more and 50 nm or less. Then, the electron transport layer 124 as a whole is formed with a film thickness of 20 nm or more and 50 nm or less. The film thicknesses of the electron transport layers 124A and 124B are examples, and are not limited to the above numerical values, and are appropriate film thicknesses that are most advantageous for optical light extraction.

[Laser trimming]
A part of the electron transport layer 124 and the hole injection layer 120A in the auxiliary gap 522zA is irradiated with a laser beam LD to remove a part of the electron transport layer 124 and the hole injection layer 120A (FIG. 3: step S8, FIG. 6 (c)). As a result, at least a part of the electron transport layer 124 and the hole injection layer 120A extending in the column direction in the auxiliary gap 522zA is trimmed to open an opening GP, and a part of the auxiliary electrode 129 is exposed through the opening GP (FIG. FIG. 8 (a)). Specifically, the laser processing apparatus stores the laser head portion (not shown) in advance in an internal storage memory or the like with a laser output and a scanning speed that can selectively remove only the thin film to be processed. Based on the program, the substrate with a thin film is irradiated with a laser beam to perform trimming.

At this time, a known solid-state laser processing machine or the like can be used as the laser processing machine. As the laser light, a YAG laser, a UV laser, or the like can be used as a semiconductor laser selected from a wavelength range of 200 nm or more and 380 nm or less. In this embodiment, for example, the third harmonic (about 355 nm) and the fourth harmonic (about 266 nm) of the YAG laser can be used.

Further, it is preferable to irradiate the electron transport layer 124 and the hole injection layer 120A with the laser beam in a vacuum atmosphere by depressurizing the inside of the chamber in which the substrate is inserted by a vacuum pump. This is because the characteristics of various organic materials forming the display panel 10 deteriorate due to the influence of oxygen and moisture in the atmosphere when the laser processing is not performed in a vacuum atmosphere. Here, the term "vacuum" may be used as long as the characteristics of the display panel 10 can prevent deterioration (for example, about 0.01 Pa), and it is not necessary to completely create a vacuum.

Laser processing is a processing in which the work material is removed by increasing the temperature of a portion irradiated with laser light and changing that portion from a solid phase to a liquid phase or a gas phase.
Since the auxiliary electrode 129 becomes a base layer during laser trimming of the electron transport layer 124 and the hole injection layer 120A, it is not preferable to be damaged by laser irradiation. Therefore, it is necessary that the processing resistance to laser irradiation is higher than that of the electron transport layer 124 and the hole injection layer 120A of the material to be cut formed on the upper surface. In order for the auxiliary electrode 129 to have high processing resistance to laser irradiation, it is necessary that the light absorption rate is lower than that of the material to be processed with respect to the wavelength of the irradiated laser light, and the auxiliary electrode 129 has electrons. In comparison with the materials used for the transport layer 124 and the hole injection layer 120A, it is necessary to use a material having a low light absorption rate with respect to the wavelength of the irradiated laser light.

By selecting a material having a lower light absorption rate than the electron transport layer 124 and the hole injection layer 120A with respect to the wavelength of the irradiated laser light as the material of the auxiliary electrode 129, the auxiliary electrode 129 is highly resistant to laser irradiation. It is possible to prevent the auxiliary electrode 129, which is the base layer, from being damaged by laser irradiation during laser trimming of the electron transport layer 124 and the hole injection layer 120A.

FIG. 7 is an experimental result showing the relationship between the wavelength of light and the light absorption rate in the constituent materials of the organic EL display panel 10. In FIG. 7, A is silver, B is aluminum, and C is the light absorption rate of light of each wavelength in the constituent material of the electron transport layer 124. As shown in FIG. 7, aluminum, which is a constituent material of the auxiliary electrode 129, has a peak light absorption rate in the range of 700 nm or more and 900 nm or less and has a large light absorption rate, and the light absorption rate is 10% or less in the range of 700 nm or less. And small. On the other hand, silver that can be used for the pixel electrode 119 has a peak light absorption rate in the range of 200 nm or more and 380 nm or less, and has a large light absorption rate. Further, the organic substance which is a constituent material of the electron transport layer 124 has a peak light absorption rate in the range of 200 nm or more and 380 nm or less and has a large light absorption rate, and the light absorption rate is as small as 10% or less in the range of 400 nm or more. Further, although not shown in FIG. 7, one or more selected from silver (Ag), molybdenum (Mo), vanadium (V), tungsten (W), and nickel (Ni), which are constituent materials of the hole injection layer 120A. It is known that the oxide of the element of No. 1 has a large light absorption rate in the range of 400 nm or less (for example, JP-A-2004-20822, JP-A-2011-34917, JP-A-2007-252974, JP. Japanese Unexamined Patent Publication No. 8-87652).

In the present embodiment, the electron transport layer 124 is irradiated with laser light to partially trim it, and the auxiliary electrode 129 as the base layer uses a metal layer containing aluminum as a main component and a material as an alloy layer. By using a laser that emits light with a wavelength of 200 nm or more and 380 nm or less, damage to the auxiliary electrode 129 is suppressed, and only the electron transport layer 124, the hole injection layer 120A, and other organic layers to be removed are made efficient. Can be removed as a target. As a result, when the electron transport layer 124 and the hole injection layer 120A are irradiated with laser light to perform trimming, the laser irradiation energy can be increased as compared with the conventional case, and the cutting object can be reliably cut. In addition to removing it, high-speed trimming of several meters / second can be performed.

[Formation of common electrode 125]
After forming the electron transport layer 124, the common electrode 125 is formed so as to cover the electron transport layer 124 (FIG. 3: step S9, FIG. 8 (b)). The common electrode 125 includes a common electrode 125A containing a metal as a main component in order from the substrate 100x side, and a common electrode 125B made of a metal oxide laminated on the common electrode 125A.

Of these, first, the common electrode 125A is formed by a CVD (Chemical Vapor Deposition) method, a sputtering method, or a vacuum deposition method so as to cover the electron transport layer 124 (b). In this example, the common electrode 125A is formed by depositing silver by a vacuum vapor deposition method.
Next, the common electrode 125B is formed on the common electrode 125A by a sputtering method or the like. In this example, the common electrode 125B is configured to form a transparent conductive layer such as ITO or IZO by using a sputtering method.

By forming the common electrode 125, a part of the auxiliary electrode 129 and the common electrode are passed through the opening GP formed by trimming a part of the electron transport layer 124 and the hole injection layer 120A extending in the column direction in the auxiliary gap 522 zA. The 125 can be reliably contacted, and the auxiliary electrode 129 and the common electrode 125 can be electrically connected to each other.
[Formation of sealing layer 126]
The sealing layer 126 is formed so as to cover the common electrode 125 (FIG. 3: step S10, FIG. 8 (c)). The sealing layer 126 can be formed by using a CVD method, a sputtering method, or the like.

[Formation of color filter substrate 131]
Next, the manufacturing process of the color filter substrate 131 will be illustrated.
A transparent upper substrate 130 is prepared, and a light-shielding layer material (133X) made of an ultraviolet curable resin (for example, an ultraviolet curable acrylic resin) as a main component and a black pigment added thereto is used as one of the transparent upper substrates 130. It is applied to the surface (FIG. 9 (a)).

A pattern mask PM having a predetermined opening is placed on the upper surface of the film 133'of the applied light-shielding layer, and ultraviolet rays are irradiated from above the pattern mask PM (FIG. 9 (b)).
Then, the pattern mask PM and the uncured light-shielding layer 133 are removed, developed, and cured to complete, for example, a light-shielding layer 133 having an approximately rectangular cross-sectional shape (FIG. 9 (c)).
Next, the material 132G of the color filter layer 132 (for example, G) containing the ultraviolet curable resin component as a main component is applied to the surface of the upper substrate 130 on which the light-shielding layer 133 is formed (FIG. 9 (d)), and a predetermined pattern is applied. A mask PM is placed and irradiated with ultraviolet rays (FIG. 9 (e)).

After that, curing is performed to remove the pattern mask PM and the uncured paste 132G and developed to form a color filter layer 132G (FIG. 9 (f)).
By repeating this step in the same manner for the color filter materials of each color, the color filter layers 132R and 132B are formed (FIG. 9 (g)). With the above, the color filter substrate 131 is formed.

[Attachment of color filter board 131 and back panel]
Next, the material of the bonding layer 127 containing an ultraviolet curable resin such as an acrylic resin, a silicon resin, and an epoxy resin as a main component is applied to the back panel composed of each layer from the substrate 100x to the sealing layer 126 (FIG. 10 (FIG. 10). a)).
Subsequently, the applied material is irradiated with ultraviolet rays, and both substrates are bonded together in a state where the relative positional relationship between the back panel and the color filter substrate 131 is matched. At this time, be careful not to let gas enter between the two. After that, when both substrates are fired to complete the sealing step, the display panel 10 is completed (FIG. 10 (b)).

<Effect>
(1) Manufacturing Method of Display Panel 10, Effect of Display Panel 10 As described above, in the manufacturing method of the display panel 10 according to the embodiment, a substrate 100x is prepared, and a plurality of pixels are above the substrate 100x. The electrode 119 and one or more auxiliary electrodes 129 made of aluminum or an aluminum alloy are formed by stretching in the row and / or column direction in a plan view, and a light emitting layer 123 is formed above each of the plurality of pixel electrodes 119. An electron transport layer 124 containing an organic material as a main component is formed above the plurality of pixel electrodes 119 and the auxiliary electrode 129, and the electron transport layer 124 is irradiated with a laser beam having a wavelength of 200 nm or more and 380 nm or less to irradiate the auxiliary electrode 129. A part of the electron transport layer 124 above the auxiliary electrode 129 is removed to expose a part of the auxiliary electrode 129, and a common electrode 125 is continuously formed above the plurality of pixel electrodes 119 and the auxiliary electrode 129 to form the auxiliary electrode 129. It is characterized in that a part of the common electrode 125 is brought into contact with the common electrode 125.

Conventionally, when a part of an organic functional layer such as an electron transport layer 124 is removed by irradiating a laser beam, if the functional layer to be removed is irradiated with a laser beam, the auxiliary electrode 129 as a base is damaged by transmitted light and is organic. There is a problem that the performance of the EL element is deteriorated. When the auxiliary electrode 129 is damaged by irradiation with laser light, for example, burrs may appear and defects may occur in the sealing in the subsequent process at the burrs, resulting in a decrease in reliability or a change in the film thickness of the auxiliary electrode 129. As a result, the resistance of the auxiliary electrode 129 may increase, or in the worst case, the auxiliary electrode 129 may disappear and the function may deteriorate due to disconnection.

If the electron transport layer 124 and the hole injection layer 120A are irradiated with laser light having a wavelength of around 450 nm, as described above, the constituent material of the electron transport layer 124 and the constituent material of the hole injection layer 120A are from 400 nm. Since the light absorption rate of light at a long wavelength is low, the electron transport layer 124 and the hole injection layer 120A on the upper surface of the auxiliary electrode 129 cannot be reliably removed.

On the other hand, in the method for manufacturing the display panel 10 according to the embodiment, when a laser beam having a wavelength of 200 nm or more and 380 nm or less is irradiated to remove a part of the functional layer, the laser beam is assisted by aluminum or an aluminum alloy. The electron transport layer 124 made of an organic material having a high light absorption rate in the range of 200 nm or more and 380 nm or less, and the hole injection layer 120A made of an oxide having a high light absorption rate in the range of 400 nm or less while reducing the influence on the electrode 129. It is possible to reliably remove a part of the functional layer composed of.

Therefore, the irradiation energy of the laser can be increased as compared with the conventional case, and high-speed patterning of about several meters / second can be realized. In addition, the deterioration of the performance of the organic EL element 100 is suppressed, the contact between the auxiliary electrode 129 and the common electrode 125 is secured to establish an electrical connection, the uneven brightness due to the voltage effect in the plane is reduced, and the conventional method is used. The organic EL display panel 10 having improved luminous efficiency can be manufactured.
(2) Effect of not forming the light emitting layer 123 of each color above the auxiliary electrode 129 In the method of manufacturing the display panel according to the embodiment, in the formation of the light emitting layer 123, the pixel electrode 119 is formed by a printing method. Only the light emitting layer 123 is selectively formed, and the light emitting layer 123 is not formed above the auxiliary electrode 129.

In the manufacturing method of the display panel 10, the light emitting layers 123R, G, and B of each color are selectively formed only in the gaps 522zR, G, and B corresponding to the respective sub-pixels by the printing method. Further, in addition to the light emitting layer 123, the hole injection layer 120B and the hole transport layer 121, which are functional layers, are similarly configured to be selectively formed only in the gaps 522zR, G, and B. Therefore, in contrast to adopting a configuration in which the light emitting layer 123 is not formed in the auxiliary gap 522zA in which the auxiliary electrode 129 is present, no special manufacturing equipment or process such as masking is required. Therefore, in the manufacturing method of the display panel 10, it is possible to realize a configuration in which the light emitting layer 123 is not formed above the auxiliary electrode 129 without requiring a special manufacturing cost or the like.

Therefore, in the manufacturing method of the display panel 10, the layer thickness of the organic functional layer to be removed in laser trimming can be reduced without requiring a special manufacturing cost or the like, so that the amount of debris generated by laser irradiation is reduced. It is possible to prevent defects in the sealing in the subsequent process due to debris. Further, by reducing the number of layers to be used by the laser, the irradiation energy of the laser can be suppressed to a low level, so that the auxiliary electrode 129 of the base is less likely to cause damage.
(3) Effect of reliably removing the hole injection layer 120A formed simultaneously with the pixel electrode 119 and the auxiliary electrode 129 In the method of manufacturing the display panel 10, silver, molybdenum, and silver, molybdenum, are used above the plurality of pixel electrodes 119 and the auxiliary electrode 129. A hole injection layer 120A containing an oxide of one or more elements selected from the group consisting of vanadium, tungsten, and nickel is formed by patterning the outer shape at the same time as the pixel electrode 119 and the auxiliary electrode 129, and is irradiated with laser light. This may be configured to remove the portion of the hole injection layer 120A that overlaps the portion of the electron transport layer 124.

As described above, in the method for manufacturing the display panel 10, the hole injection layer 120B and the hole transport layer 121, which are functional layers, are similarly selectively formed only in the gaps 522zR, G, and B. Therefore, these functional layers (hole injection layer 120B, hole transport layer 121) are not formed above the auxiliary electrode 129.
However, the hole injection layer 120A formed on the upper surface of the pixel electrode 119 is for the hole injection layer 120A for forming the hole injection layer 120A, as shown in FIGS. 4 (c) and 4 (d) and 5 (a). After forming the metal layer 120A'on the surface of the metal film 119x for forming the pixel electrode 119 by the vapor phase growth method, the pixel electrode 119 and the hole injection layer whose outer shape is patterned into the same shape by the photolithography method are used. It is formed as a laminated body of 120A.

In such a case, if the electron transport layer 124 and the hole injection layer 120A are irradiated with laser light having a wavelength of around 450 nm, as described above, the constituent materials of the electron transport layer 124 and the hole injection layer 120A Since the constituent material has a low light absorption rate of light at a wavelength longer than 400 nm, the electron transport layer 124 and the hole injection layer 120A on the upper surface of the auxiliary electrode 129 cannot be removed.

On the other hand, in the method of manufacturing the display panel 10, even when the hole injection layer 120A is formed by patterning above the pixel electrode 119 and the auxiliary electrode 129 at the same time as the pixel electrode 119 and the auxiliary electrode 129, the auxiliary electrode 129 is formed. By irradiating the electron transport layer 124 and the hole injection layer 120A formed above with laser light having a wavelength of 200 nm or more and 380 nm or less, the hole injection layer overlaps a part of the electron transport layer 124 at the same time as the electron transport layer 124. The portion of 120A can also be removed. The oxide constituting the hole injection layer 120A has a high light absorption rate in the range of 400 nm or less, and by irradiating a predetermined portion on the auxiliary electrode 129 with a laser beam, damage to the auxiliary electrode 129 is suppressed. The hole injection layer 120A in the portion irradiated with the laser beam is removed to make contact between the auxiliary electrode 129 and the common electrode 125, and the oxide layer formed on the pixel electrode 119 functions as the hole injection layer 120A. Can be made to.

As a result, it is possible to manufacture a high-definition organic EL display panel 10 that reduces luminance unevenness due to an in-plane voltage effect and improves luminous efficiency as compared with the conventional case.
<Circuit configuration of display device 1>
Hereinafter, the circuit configuration of the organic EL display device 1 (hereinafter referred to as “display device 1”) according to the first embodiment will be described with reference to FIG.

As shown in FIG. 11, the display device 1 includes an organic EL display panel 10 (hereinafter referred to as “display panel 10”) and a drive control circuit unit 20 connected to the organic EL display panel 10.
The display panel 10 is an organic EL (Electro Luminescence) panel that utilizes the electroluminescence phenomenon of an organic material, and is configured such that a plurality of organic EL elements are arranged in a matrix, for example. The drive control circuit unit 20 is composed of four drive circuits 21 to 24 and a control circuit 25.

<Circuit configuration of display panel 10>
In the display panel 10, a plurality of unit pixels 100e are arranged in a matrix to form a display area. Each unit pixel 100e is composed of three organic EL elements, that is, three sub-pixels 100se issued in three colors of R (red), G (green), and B (blue). The circuit configuration of each sub-pixel 100se will be described with reference to FIG.

FIG. 12 is a circuit diagram showing a circuit configuration of the organic EL element 100 corresponding to each sub-pixel 100se of the display panel 10 used in the display device 1.
As shown in FIG. 12, in the display panel 10 according to the present embodiment, each sub-pixel 100se has two transistors Tr ₁ and Tr ₂ and one capacitor C, and an organic EL element unit EL as a light emitting unit. It is configured. The transistor Tr ₁ is a driving transistor, and the transistor Tr ₂ is a switching transistor.

The gate G ₂ of the switching transistor Tr ₂ is connected to the scanning line Vscn, and the source S ₂ is connected to the data line Vdat. The drain D ₂ of the switching transistor Tr ₂ is connected to the gate G ₁ of the drive transistor Tr ₁ .
The drain D ₁ of the drive transistor Tr ₁ is connected to the power supply line Va, and the source S ₁ is connected to the pixel electrode (anode) of the organic EL element unit EL. The common electrode (cathode) in the organic EL element unit EL is connected to the ground line Vcat.

The first end of the capacitor C is connected to the drain D ₂ of the switching transistor Tr ₂ and the gate G ₁ of the drive transistor Tr ₁ , and the second end of the capacitor C is connected to the power supply line Va.
In the display panel 10, a plurality of adjacent sub-pixels 100se (for example, three sub-pixels 100se of emission colors of red (R), green (G), and blue (B)) are combined to form one unit pixel 100e. However, each unit pixel 100e is arranged so as to be distributed to form a pixel area. Then, a gate line is drawn out from the gate G ₂ of each sub-pixel 100se, and is connected to a scanning line Vscn connected from the outside of the display panel 10. Similarly, a source line is drawn from the source S ₂ of each sub-pixel 100se and connected to a data line Vdat connected from the outside of the display panel 10.

Further, the power supply line Va of each sub-pixel 100se and the ground line Vcat of each sub-pixel 100se are aggregated and connected to the power supply line and the ground line of the display device 1.
<Modification example>
Although the display panel 10 according to the embodiment has been described, the present disclosure is not limited to the above embodiment except for its essential characteristic components. For example, a form obtained by subjecting various modifications to the embodiment that a person skilled in the art can think of, or a form realized by arbitrarily combining the components and functions in each embodiment without departing from the spirit of the present invention. Is also included in this disclosure. Hereinafter, as an example of such a form, a modified example of the display panel 10 will be described.
(1) Modifications 1, 2, 3,
The display panel 10A according to the first modification will be described. In the method for manufacturing the display panel 10 according to the embodiment, as shown in FIG. 1, one of the red, blue, and green light emitting layers 123 is above the three pixel electrodes 119 that are continuous in the column direction. When each color is arranged one by one and three pixel electrodes 119 continuous in the row direction are used as the pixel electrode group, the auxiliary electrode 129X extends along the auxiliary gap 122zA in the row direction between the adjacent pixel electrode group and the pixel electrode group. The auxiliary electrode 129Y is formed by extending along the auxiliary gap 522zA in the row direction between the adjacent pixel electrode group and the pixel electrode group. Then, in removing a part of the electron transport layer 124 and the hole injection layer 120A by irradiation with laser light, a part of the electron transport layer 124 flying hole injection layer 120A located above the auxiliary electrode 129 and extending in the elongated direction. Is removed to form the contact portions 129XA and 129YA.

However, the arrangement of the auxiliary electrodes 129 and the positions of the contact portions 129XA and 129YA are not limited to the embodiments of the embodiment, and may be appropriately modified.
FIG. 13 is a schematic plan view showing a part of the organic EL display panel 10A according to the first modification. In the method for manufacturing the organic EL display panel 10A according to the first modification, in the removal of a part of the electron transport layer 124 and the hole injection layer 120A, the organic EL display panel 10A is located above the auxiliary electrode 129 and extends intermittently along the elongated direction. It is characterized in that a part of the electron transport layer 124 and the hole injection layer 120A is removed. As a result, in the formation of the auxiliary electrode 129A, the contact portion 129XA of the auxiliary electrode is intermittently arranged in the auxiliary gap 122zA in the row between the adjacent pixel electrode group and the pixel electrode group, and the contact portion 129YA of the auxiliary electrode is adjacent to each other. A configuration is adopted in which the pixel electrode group and the pixel electrode group are intermittently arranged in the auxiliary gap 522 zA in the row direction.

With this configuration, in the method for manufacturing the organic EL display panel 10A according to the first embodiment, processing becomes easier as compared with the case where the auxiliary electrode 129Y is stretched along the auxiliary gap 122zA and 522zA.
In addition, the process time can be shortened and the consumption of the laser light source can be reduced. Further, the auxiliary electrode 129Y may be arranged intermittently in either the auxiliary gap 122zA in the row direction or the auxiliary gap 522zA in the column direction. Furthermore, the process time can be shortened and the consumption of the laser light source can be reduced.

As shown in the schematic plan view showing a part of the organic EL display panel 10B according to the modified example 2 shown in FIG. 14, in the method for manufacturing the organic EL display panel 10B according to the modified example 2, in the formation of the auxiliary electrode 129B, the auxiliary electrode is formed. The contact portion 129YA extending in the long direction of the 129BY and the auxiliary electrode 129BY may be configured to be extended and arranged in all the auxiliary gaps 522zA in the row direction between the adjacent pixel electrode group and the pixel electrode group. Alternatively, it may be configured to be extended and arranged in all the auxiliary gaps 122zA in the row direction. Compared with the configuration according to the embodiment in which the auxiliary electrode 129 is formed in all the gaps in the row and column directions, the process time can be shortened and the consumption of the laser light source can be reduced.

Further, as shown in the schematic plan view showing a part of the organic EL display panel 10C according to the modified example 3 shown in FIG. 15, in the method for manufacturing the organic EL display panel 10C according to the modified example 3, the auxiliary electrode 129C is formed. The contact portion 129YA extending in the long direction of the auxiliary electrode 129CY and the auxiliary electrode 129CY may be configured to be extended and arranged in a part of the auxiliary gap 522zA in the row direction between the adjacent pixel electrode group and the pixel electrode group. Alternatively, it may be configured to be extended and arranged in a part of the auxiliary gap 122zA in the row direction. Compared with the configuration according to the second modification in which the auxiliary electrode 129 is formed in all the gaps in the row or column direction, the process time can be shortened and the consumption of the laser light source can be reduced.
(2) Other Modifications In the display panel 10 according to the embodiment, the metal film 119x and the metal layer 120A'for the hole injection layer 120A are formed and then patterned on the upper surfaces of the pixel electrode 119 and the auxiliary electrode 129. It is configured to form the hole injection layer 120A. However, in another embodiment, an oxide layer containing a titanium oxide, ITO or IZO is further patterned above the plurality of pixel electrodes 119 and the auxiliary electrodes 129 at the same time as the pixel electrodes and the auxiliary electrodes. Then, by irradiating a laser beam having a wavelength of 200 nm or more and 380 nm or less, the portion of the oxide layer overlapping with a part of the electron transport layer 124 may be removed at the same time as the electron transport layer 124. Oxides containing titanium oxides, ITO or IZO have a high light absorption rate in the range of 400 nm or less, and irradiation of a predetermined portion on the auxiliary electrode 129 with laser light causes damage to the auxiliary electrode 129. While suppressing the oxide, the oxide in the portion can be removed, and the oxide formed on the pixel electrode 119 can function as an electrode protective layer.

Further, since the auxiliary electrode 129 is made of aluminum or an aluminum alloy, an aluminum oxide layer may be formed on the surface. However, for example, by irradiating the fourth harmonic of the YAG laser, at the same time as the electron transport layer 124, the aluminum oxide layer having an absorption region having a wavelength of 300 nm or less is removed, and the contact between the auxiliary electrode 129 and the common electrode 125 is performed. Can be planned.

In the display panel 10 according to the embodiment, the auxiliary gap 129 is configured to be located at the auxiliary gap 122 zA and / or 522 zA, but the position where the auxiliary gap 129 is formed is not limited to this. For example, the auxiliary gap 129 may be provided on the upper surface of the banks 122X and 522Y. For example, the auxiliary gap 129Y may be formed on the upper surface of the top portion 522Yb of the row bank 522Y.

Further, in the display panel 10 according to the embodiment, the colors of the light emitted by the light emitting layer 123 of the sub-pixel 100se arranged in the gap 522z between the column banks 522Y adjacent in the row direction are configured to be different from each other and are adjacent to each other in the column direction. The color of the light emitted by the light emitting layer 123 of the sub-pixel 100se arranged in the gap between the row banks 122X is the same. However, in the above configuration, the color of the light emitted by the light emitting layer 123 of the sub-pixel 100se adjacent in the row direction is the same, and the color of the light emitted by the light emitting layer 123 of the sub-pixel 100se adjacent in the column direction is different from each other. May be good.

In the display panel 10, there are three types of pixels 100e, a red pixel, a green pixel, and a blue pixel, but the present invention is not limited to this. For example, the light emitting layer may be one type, or the light emitting layer may be four types that emit light in red, green, blue, white, or the like.
Further, in the above embodiment, the unit pixels 100e are arranged in a matrix, but the present invention is not limited to this. For example, when the interval between the pixel regions is one pitch, it is also effective for a configuration in which the pixel regions are deviated by half a pitch in the column direction between adjacent gaps. In a display panel with increasing definition, it is difficult to visually discriminate a slight deviation in the column direction, and even if the film thickness unevenness is lined up on a straight line (or staggered shape) having a certain width, it is visually band-shaped. Therefore, even in such a case, the display quality of the display panel can be improved by suppressing the uneven brightness from arranging in the staggered pattern.

Further, in the above embodiment, the hole injection layer 120, the hole transport layer 121, the light emitting layer 123, and the electron transport layer 124 are present between the pixel electrode 119 and the common electrode 125. Not limited to. For example, the hole injection layer 120, the hole transport layer 121, and the electron transport layer 124 may not be used, and only the light emitting layer 123 may exist between the pixel electrode 119 and the common electrode 125. Further, for example, a configuration including a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, or the like, or a configuration including a plurality or all of them at the same time may be used. Further, all of these layers do not have to be made of an organic compound, and may be made of an inorganic substance or the like.

Further, in the above embodiment, the light emitting layer 123 is formed by using a wet film forming process such as a printing method, a spin coating method, or an inkjet method, but the present invention is not limited to this. For example, a dry film forming process such as a vacuum vapor deposition method, an electron beam vapor deposition method, a sputtering method, a reactive sputtering method, an ion plating method, or a vapor phase growth method can also be used. Further, as the material of each constituent part, a known material can be appropriately adopted.

Further, in the above embodiment, the pixel electrode 119 which is an anode is arranged in the lower part of the EL element part, and the pixel electrode 119 is connected to the wiring connected to the source electrode of the TFT, but the lower part of the EL element part is adopted. It is also possible to adopt a configuration in which a common electrode is arranged on the top and an anode is arranged on the upper part. In this case, the cathode arranged at the bottom is connected to the drain in the TFT.

Further, in the above embodiment, a configuration in which two transistors Tr ₁ and Tr ₂ are provided for one sub-pixel 100se is adopted, but the present invention is not limited thereto. For example, one transistor may be provided for one subpixel, or three or more transistors may be provided.
Further, in the above embodiment, the top emission type EL display panel is taken as an example, but the present invention is not limited thereto. For example, it can be applied to a bottom emission type display panel or the like. In that case, each configuration can be changed as appropriate.

≪Supplement≫
The embodiments described above all show a preferable specific example of the present invention. The numerical values, shapes, materials, components, arrangement positions and connection forms of the components, processes, order of processes, etc. shown in the embodiments are examples, and are not intended to limit the present invention. Further, among the components in the embodiment, the steps not described in the independent claims showing the highest level concept of the present invention will be described as arbitrary components constituting the more preferable form.

Further, the order in which the above steps are executed is for exemplifying the present invention in detail, and may be an order other than the above. Further, a part of the above steps may be executed at the same time (parallel) with other steps.
Further, for the sake of easy understanding of the invention, the scale of the components of each figure mentioned in each of the above embodiments may be different from the actual ones. Further, the present invention is not limited to the description of each of the above embodiments, and can be appropriately modified without departing from the gist of the present invention.

Further, at least a part of the functions of each embodiment and its modifications may be combined.
Further, the present invention also includes various modifications in which modifications within the range that can be conceived by those skilled in the art are made to the present embodiment.

The organic EL display panel and the organic EL display device according to the present invention can be widely used for devices such as television sets, personal computers, mobile phones, and other various electronic devices having a display panel.

1 Organic EL display device 10 Organic EL display panel 10e Section area (display area)
100 Organic EL element 100e Unit pixel 100se Sub-pixel 100a Self-luminous region 100b Non-self-luminous region 100x Substrate (TFT substrate)
118 Interlayer insulation layer 119 Pixel electrode 120, 120A, 120B Hole injection layer 121 Hole transport layer 122 Bank 122X Row bank (row insulation layer)
522Y row bank (row insulation layer)
522z (522zR, 522zG, 522zB) Gap 123 (123R, 123G, 123B) Light emitting layer 124, 124A, 124B Electron transport layer 125, 125A, 125B Common electrode 128 Protective layer 129, 129X, 129Y Auxiliary electrode 129XA, 129YA Auxiliary electrode Contact part 126 Sealing layer 127 Bonding layer 130 Upper substrate 131 Color filter substrate 132 Color filter layer 133 Light-shielding layer

Claims (10)

Prepare the board,
Above the substrate, a plurality of pixel electrodes and one or more auxiliary electrodes made of aluminum or an aluminum alloy extending in a row and / or column direction in a plan view are formed.
Above the plurality of pixel electrodes and the auxiliary electrode, a hole injection layer containing an oxide of one or more elements selected from the group consisting of silver, molybdenum, vanadium, tungsten, and nickel is provided with the pixel electrode and the auxiliary electrode. Formed by patterning the outer shape at the same time,
A light emitting layer is formed above each of the plurality of pixel electrodes.
An organic functional layer is formed above the plurality of pixel electrodes and the auxiliary electrodes.
The organic functional layer is irradiated with a laser beam having a wavelength of 200 nm or more and 380 nm or less to remove a part of the organic functional layer above the auxiliary electrode to expose a part of the auxiliary electrode, and the laser light is emitted. By irradiating, the portion of the hole injection layer that overlaps with the portion of the organic functional layer is removed.
A method for manufacturing an organic EL display panel in which a common electrode is continuously formed above the plurality of pixel electrodes and the auxiliary electrode, and a part of the auxiliary electrode is brought into contact with the common electrode. The method for manufacturing an organic EL display panel according to claim 1, wherein the light emitting layer is not formed above the auxiliary electrode in the formation of the light emitting layer. The method for manufacturing an organic EL display panel according to claim 1 or 2, wherein the laser light includes a third harmonic or a fourth harmonic of a YAG laser. The method for manufacturing an organic EL display panel according to any one of claims 1 to 3, wherein the organic functional layer contains any one of an oxadiazole derivative, a triazole derivative, and a phenanthroline derivative as a main component. Further, an oxide layer containing a titanium oxide, ITO or IZO is formed above the plurality of pixel electrodes and the auxiliary electrode by patterning the outer shape at the same time as the pixel electrode and the auxiliary electrode.
The method for manufacturing an organic EL display panel according to any one of claims 1 to 4 , wherein the portion of the oxide layer that overlaps with a part of the organic functional layer is removed by irradiating the laser beam. The method for manufacturing an organic EL display panel according to any one of claims 1 to 5 , wherein the irradiation of the organic functional layer with laser light is performed in a vacuum atmosphere. In the formation of the light emitting layer, the plurality of pixel electrodes are arranged in a matrix.
Above the three pixel electrodes that are continuous in the column direction, one of the light emitting layers that emit red, blue, and green is arranged, one for each color.
When the three consecutive pixel electrodes are used as a pixel electrode group,
The organic EL display panel according to any one of claims 1 to 6 , wherein in the formation of the auxiliary electrode, the auxiliary electrode is formed by stretching between a pixel electrode group adjacent to each other in the row direction and a pixel electrode group. Manufacturing method. The method for manufacturing an organic EL display panel according to claim 7 , wherein in the formation of the auxiliary electrode, the auxiliary electrode is further stretched between a pixel electrode group adjacent to each other in the column direction and a pixel electrode group. The manufacture of the organic EL display panel according to claim 7 or 8 , wherein in the removal of a part of the organic functional layer, a part of the organic functional layer located above the auxiliary electrode and extending in a long direction is removed. Method. The 7th or 8th claim, wherein in the removal of a part of the organic functional layer, a part of the organic functional layer located above the auxiliary electrode and extending along the longitudinal direction is intermittently removed. A method for manufacturing an organic EL display panel.

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