JP2020030933A - Organic el display panel and manufacturing method of organic el display panel - Google Patents

Abstract

To reduce a resistance in an electric connection between a common electrode 125 and a reference electrode 200.SOLUTION: An organic EL display panel comprises: a reference electrode 200 extended and distributed to an array direction in a gap of a pixel element 119 adjacent to a row direction on a substrate; a plurality of column insulation bodies 230 which is distributed in a state of being separated to the row direction, respectively onto the reference electrode 200; an electron transport layer 124 provided on a light emission layer 123, and over the plurality of column insulation bodies 230; and a common electrode 125. The reference electrode 200 contains a contact layer 202 made of a metal which is hardly oxidized than a construction material of a pixel electrode 119 or an alloy thereof in an upper surface part 202b where at least each column insulation body 230 is not existed, and in the electron transport layer 124, one part 124a positioned near a side wall 230c of each column insulation body 230 on the reference electrode 100 is in defection or has a thin layer.SELECTED DRAWING: Figure 2

Description

  The present disclosure relates to an organic EL display panel using an organic EL (Electro Luminescence) element utilizing an electroluminescence phenomenon of an organic material, and a method of manufacturing the same using the same.

In recent years, as a display panel used for a display device such as a digital television, an organic EL display panel in which a plurality of organic EL elements are arranged in a matrix on a substrate has been put to practical use.
In an organic EL display panel, generally, a light emitting layer of each organic EL element and an adjacent organic EL element are separated by an insulating layer made of an insulating material. In an organic EL display panel for color display, the organic EL element is Subpixels that emit light of each color of RGB are formed, and adjacent RGB subpixels are combined to form a unit pixel in color display.

The organic EL element has a basic structure in which a light-emitting layer containing an organic light-emitting material is disposed between a pair of electrodes, and when driven, a voltage is applied between the pair of electrodes to inject holes into the light-emitting layer. Light is emitted as a result of recombination of electrons and electrons.
The top emission type organic EL element has an element structure in which a pixel electrode, an organic layer (including a light emitting layer), and a common electrode are sequentially provided on a substrate. Light from the light emitting layer is reflected by the pixel electrode made of a light reflective material, and is emitted upward from a common electrode made of a light transmissive material.

The common electrode is often formed over the entire surface of the substrate, and when the electric resistance of the common electrode is large, current is not sufficiently supplied due to a voltage drop in a portion far from the power supply portion, and the luminous efficiency is reduced. As a result, in-plane luminance unevenness may occur.
Therefore, a method of providing an auxiliary electrode to reduce the resistance of the common electrode has been proposed (for example, Patent Document 1). In Patent Literature 1, an auxiliary electrode is formed in the same layer as a pixel electrode, and a light emitting layer is separately painted with a metal mask. Discloses a light emitting device having an electrically connected configuration.

JP 2017-212449 A

However, in the above conventional method, it is necessary to perform mask vapor deposition in order to avoid the auxiliary electrode when forming an electron transporting layer located above the light emitting layer, particularly among the organic layers composed of a plurality of layers, There is a problem that the production cost increases.
The present disclosure has been made in view of the above problems, and can be manufactured by using a simple manufacturing process, reduces the electric resistance in the electrical connection between the common electrode and the auxiliary electrode, and improves the luminous efficiency. It is an object of the present invention to provide an organic EL display panel in which in-plane luminance unevenness is suppressed, and a method for manufacturing an organic EL display panel.

  An organic EL display panel according to one embodiment of the present disclosure is an organic EL display panel in which a plurality of pixel electrodes are arranged in a matrix on a substrate, and a light emitting layer containing an organic light emitting material is arranged on each pixel electrode. An auxiliary electrode extending in a column direction on at least one of gaps between pixel electrodes adjacent to each other in a row direction on the substrate, and a state in which each of the auxiliary electrodes is separated on the auxiliary electrode in a column direction. A plurality of columnar insulators, a functional layer provided over the light emitting layer and the plurality of columnar insulators, and a common electrode provided in a state of continuously extending over the functional layer, Wherein the auxiliary electrode includes a contact layer made of a metal or an alloy thereof that is less oxidizable than a constituent material of the pixel electrode, at least on an upper surface portion where the columnar insulator does not exist, and the functional layer includes the auxiliary electrode The side wall of the columnar insulator above A part located beside is missing or thinned, the common electrode is in contact with the contact layer exposed by the lack of the functional layer, and the functional layer is thinned In some portions, the portion is electrically connected to the auxiliary electrode with a lower resistance than the other portions of the functional layer.

  The organic EL display panel according to one embodiment of the present disclosure can be manufactured using a simple manufacturing process, reduces electric resistance in electrical connection between a common electrode and an auxiliary electrode, improves luminous efficiency, and improves in-plane light emission. Luminance unevenness can be suppressed.

FIG. 2 is a schematic plan view showing a part of the organic EL display panel 10 according to the embodiment. FIG. 3 is a perspective view of a portion of a bank 122 corresponding to a unit pixel 100 e of the organic EL display panel 10 as viewed obliquely from above. It is the schematic cross section cut | disconnected by A1-A1 in FIG. It is the schematic cross section cut | disconnected by A2-A2 in FIG. It is the schematic cross section cut | disconnected by A3-A3 in FIG. (A)-(f) is a schematic sectional view cut at the same position as A1-A1 in FIG. 1 showing a state in each step in manufacturing the organic EL display panel 10. (A)-(d) is a schematic cross-sectional view showing the state in each step in the manufacture of the organic EL display panel 10 and cut at the same position as A1-A1 in FIG. (A)-(d) is a schematic cross-sectional view showing the state in each step in the manufacture of the organic EL display panel 10 and cut at the same position as A1-A1 in FIG. FIG. 3 is a schematic diagram showing a sputtering apparatus 600 used for forming a common electrode 125. (A)-(g) is a schematic cross-sectional view taken at the same position as A1-A1 in FIG. 1 showing a state in each step in manufacturing the organic EL display panel 10. (A)-(b) is a schematic sectional view cut at the same position as A1-A1 in FIG. 1 showing a state in each step in manufacturing the organic EL display panel 10. FIG. 4 is a schematic diagram illustrating a vapor deposition device 500 used for forming an electron transport layer 124. FIG. 5 is an enlarged view around the auxiliary electrode 200 shown in FIG. 4 after a common electrode 125 is formed. FIG. 2 is a schematic block diagram illustrating a circuit configuration of the organic EL display device 1 according to the embodiment. FIG. 2 is a schematic circuit diagram illustrating a circuit configuration of each sub-pixel 100se of the organic EL display panel 10 used in the organic EL display device 1. FIG. 9 is a schematic cross-sectional view of the organic EL display panel 10A according to Modification Example 1 cut at the same position as A1-A1 in FIG. FIG. 9 is a schematic cross-sectional view of an organic EL display panel 10B according to Modification Example 2 cut at the same position as A1-A1 in FIG.

<< Outline of Embodiment for Implementing the Present Invention >>
An organic EL display panel according to an aspect of the present disclosure is an organic EL display panel in which a plurality of pixel electrodes are arranged in a matrix on a substrate, and a light emitting layer containing an organic light emitting material is arranged on each pixel electrode. An auxiliary electrode extending in a column direction on at least one of gaps between pixel electrodes adjacent to each other in a row direction on the substrate; and an auxiliary electrode extending in a column direction on the auxiliary electrode. A plurality of columnar insulators, a functional layer provided over the light emitting layer and the plurality of columnar insulators, and a common electrode provided in a state of continuously extending over the functional layer. The auxiliary electrode includes a contact layer made of a metal or an alloy thereof that is less oxidizable than a constituent material of the pixel electrode, at least on an upper surface portion where the columnar insulator does not exist, and the functional layer is formed on the auxiliary electrode. Near the side wall of the columnar insulator The common electrode is in contact with the contact layer exposed due to the lack of the functional layer, or in a portion where the functional layer is thinned. , And electrically connected to the auxiliary electrode with a lower resistance than the other portions of the functional layer. In another aspect, in any of the above structures, the upper surface portion where the columnar insulator does not exist may be a bottom portion of a gap between the adjacent columnar insulators.

  With such a configuration, an organic EL display panel that can be manufactured using a simple manufacturing process, reduces electric resistance in electrical connection between the common electrode and the auxiliary electrode, improves luminous efficiency, and suppresses in-plane luminance unevenness. Can be provided. In addition, since the contact surface of the auxiliary electrode is made of a material that is less oxidized than the constituent material of the pixel electrode and the lower layer of the auxiliary electrode, the oxidation of the auxiliary electrode is suppressed in the subsequent manufacturing process, and The electric resistance in the electric connection between the common electrode and the auxiliary electrode can be reduced.

In another aspect, in any of the above configurations, the ratio of the width of the gap between the adjacent columnar insulators to the thickness of the columnar insulator may be 0.5 or more and 2 or less. In another aspect, in any of the above configurations, the inclination angle of the side wall of the columnar insulator with respect to the contact layer surface may be greater than 90 ° and 140 ° or less.
With such a configuration, the functional layer is stepped in the vicinity of the side wall of the columnar insulator on the auxiliary electrode to form a cutout portion by a simple manufacturing process without providing a dedicated process, and a contact layer of the auxiliary electrode is formed from the cutout portion. A structure in which the contact surface is exposed can be realized.

  In another aspect, in any one of the above-described configurations, the functional layer may include an upper surface of the columnar insulator, and a portion other than the vicinity of a sidewall of the columnar insulator in a portion where the columnar insulator does not exist on the auxiliary electrode. May exist, and the portion located on the side wall of the columnar insulator may be missing or thinned. Accordingly, a configuration is obtained in which the auxiliary electrode includes a lower layer made of the same material as the constituent material of the pixel electrode, and the contact layer extended on the upper surface of the lower layer in the column direction.

  With such a configuration, a part of the electron transport layer formed on the auxiliary electrode is interrupted (cut off), and a part of the electron transport layer is missing, missing, or thinned. At the same time, the common electrode is formed in contact with the contact surface of the auxiliary electrode so as to go around the missing portion of the electron transport layer. Alternatively, in the thinned portion of the electron transport layer, it is electrically connected to the auxiliary electrode with a lower resistance than the other portions of the electron transport layer.

In another aspect, in any one of the above structures, the auxiliary electrode includes a lower layer formed of the same material as a constituent material of the pixel electrode, wherein the columnar insulator is disposed above, and a plan view of an upper surface of the lower layer. In the above structure, the contact layer may be arranged in an island shape in a portion where the columnar insulator does not exist.
According to such a configuration, it is possible to manufacture using a simple manufacturing process, reduce the electric resistance in the electrical connection between the common electrode and the auxiliary electrode, and, for example, use a noble metal such as silver (Ag), gold (Au), and platinum (Pt). Alternatively, the amount of constituent materials of the contact layer composed of an alloy containing these as a main component can be reduced, and the material cost can be reduced.

In another aspect, in any of the above configurations, the auxiliary electrode may include only the contact layer extending in the column direction.
According to such a configuration, it is possible to manufacture using a simple manufacturing process, and it is possible to reduce the electric resistance in the electrical connection between the common electrode and the auxiliary electrode.
A method for manufacturing an organic EL display panel according to an aspect of the present disclosure is a method for manufacturing an organic EL display panel, comprising: preparing a substrate; and arranging a plurality of pixel electrodes on the substrate in a matrix. Forming auxiliary electrodes extending in the column direction on at least one of the gaps between the pixel electrodes adjacent to each other in the row direction on the substrate, and forming the auxiliary electrodes on at least the auxiliary electrodes in the column direction. Forming a plurality of columnar insulators, forming a light emitting layer containing an organic light emitting material on each of the pixel electrodes, and straddling the light emitting layer and the plurality of columnar insulators by a vacuum deposition method A step of forming a functional layer, and a step of forming a common electrode continuously extending on the functional layer by a sputtering method or a CVD method, wherein the step of forming the auxiliary electrode includes at least the columnar shape. The top portion of the edge member is absent, and forming a contact layer made of an oxide hard metal or alloy thereof than the material of said pixel electrodes.

With such a configuration, since the electron transport layer on the light emitting layer can be formed as a common layer, patterning such as mask formation in the electron transport layer forming step is not required, and the common electrode and the auxiliary electrode can be formed using a simple manufacturing process. It is possible to manufacture an organic EL display panel in which the electric resistance in the electrical connection of the present invention is reduced, the luminous efficiency is improved, and the uneven brightness is suppressed.
In another aspect, in any one of the above structures, the method further includes a step of forming a column bank extending in a column direction in a gap between pixel electrodes adjacent to each other on the substrate in a row direction, the step of forming the bank After that, the contact layer may be formed.

According to such a configuration, a process involving baking such as formation of a bank is performed in the order of steps performed after formation of a contact layer of an auxiliary electrode. Therefore, oxidation of a contact surface of the auxiliary electrode in a subsequent manufacturing process is suppressed, and the manufacturing process is performed. In the display panel, the electric resistance in the electric connection between the common electrode and the auxiliary electrode can be reduced.
In another aspect, in any one of the above-described configurations, the configuration may be such that the contact layer is formed after the step of forming the columnar insulator.

With such a configuration, a process involving firing, such as formation of a columnar insulator, is performed in the order of steps performed after the formation of the contact layer. Therefore, oxidation of the contact surface of the auxiliary electrode in a subsequent manufacturing process is further suppressed.
In another aspect, in any one of the above structures, the contact layer includes an ink containing a metal or an alloy thereof that is less oxidizable than a constituent material of the pixel electrode, at least one of the gaps between the pixel electrodes. The ink may be formed in a row-like region extending in the row direction on the gap and formed by evaporating a solvent contained in the ink.

With such a configuration, the contact layer can be selectively formed at least on the upper surface portion of the base where no columnar insulator exists without using patterning such as mask film formation.
In another aspect, in any one of the above structures, in the step of forming the functional layer, a portion of the auxiliary electrode on the auxiliary electrode where the columnar insulator does not exist is located near a side wall of the columnar insulator. The functional layer is formed so as to be thin or thin, and in the step of forming the common electrode, the contact layer exposed by the lack of the functional layer and the common electrode are in direct contact with each other. The configuration in which the common electrode is formed such that the common electrode is electrically connected to the auxiliary electrode with a lower resistance than the other functional layer portions in the portion where the functional layer is thinned There may be. Accordingly, in the step of forming the functional layer, the upper surface of the columnar insulator, and a portion present on the auxiliary electrode other than near the side wall of the columnar insulator, and a portion located on the side wall of the columnar insulator is A configuration is obtained in which the functional layer is formed so as to be missing or thin.

  With this configuration, when the electron transport layer is formed by a vacuum deposition method or the like, a portion located near the sidewall of the columnar insulator at the bottom of the gap between the adjacent columnar insulators on the upper surface of the contact layer of the auxiliary electrode is missing ( (Step disconnection), a missing portion where the electron transport layer is not formed is generated near the side wall of the gap bottom, and a part of the gap bottom of the auxiliary electrode is exposed from the missing portion. A structure can be realized in which the common electrode is formed in contact with the contact surface of the auxiliary electrode so as to go around the missing portion. Alternatively, it is possible to realize a structure in which the thinned portion of the electron transport layer is electrically connected to the auxiliary electrode with a lower resistance than the other portions of the electron transport layer.

Embodiment 1
Hereinafter, a method for manufacturing an organic EL panel according to the embodiment will be described with reference to the drawings.
<Overall Configuration of Display Panel 10>
Display panel 10 (hereinafter, referred to as “display panel 10”) according to the present embodiment will be described with reference to the drawings. Note that the drawings are schematic diagrams, and the scales may be different from actual ones. FIG. 1 is a schematic plan view showing a part of the organic EL display panel 10 according to the embodiment, and is a perspective view seen from below a bank 122 described later. FIG. 2 is a perspective view of a portion of the bank 122 corresponding to the unit pixel 100e of the organic EL display panel 10 as viewed obliquely from above.

  The display panel 10 is an organic EL display panel using the electroluminescence phenomenon of an organic compound. A plurality of organic EL elements each forming a pixel are formed on a substrate 100x (TFT substrate) on which a thin film transistor (TFT: Thin Film Transistor) is formed. The EL elements 100 are arranged in rows and columns, and have a top emission type configuration in which light is emitted from the upper surface. Here, in the present specification, the X direction, the Y direction, and the Z direction in FIG. 1 are referred to as a row direction, a column direction, and a thickness direction in the display panel 10, respectively.

  As shown in FIG. 1, the display panel 10 includes a partition area 10e in which a column bank 522Y and a row bank 122X are arranged on a substrate 100x in a matrix shape and regulate light emitting units of RGB colors. . In this specification, the column bank 522Y and the row bank 122X are collectively referred to as “bank 122”. The partition region 10e is a region where the organic EL element 100 is formed in each partition regulated by the column bank 522Y and the row bank 122X.

  Unit pixels 100e corresponding to the organic EL elements 100 are arranged in rows and columns in a partitioned area 10e of the display panel 10 (hereinafter, referred to as "area 10e"). Each unit pixel 100e has an area where light is emitted from an organic compound, that is, 100aR that emits red light, 100aG that emits green light, and 100aB that emits blue light (hereinafter, 100aR, 100aG, and 100aB. ) Are formed. That is, as shown in FIG. 1, three sub-pixels 100se respectively corresponding to the self-luminous regions 100aR, 100aG, and 100aB arranged in the row direction constitute one set, and constitute a unit pixel 100e in color display.

  As shown in FIGS. 1, 2, and 3, the display panel 10 includes a plurality of pixel electrodes 119 arranged in a matrix on the substrate 100x in a row and column direction at predetermined distances δX and δY, respectively. Have been. The pixel electrode 119 has a rectangular shape in plan view, and is made of a light reflecting material. The pixel electrodes 119 arranged in a matrix correspond to the three self-luminous regions 100aR, G, and B sequentially arranged in the row direction.

Further, in the display panel 10, a plurality of auxiliary electrodes 200 are continuously arranged in the column direction between the unit pixels 100e on the substrate 100x. The auxiliary electrode 200 is made of the same light reflecting material as the pixel electrode 119.
In the display panel 10, the shape of the bank 122 adopts a so-called linear insulating layer type, and a row-direction outer edge 119 a 3/119 a 4 of two pixel electrodes 119 adjacent in the row direction and a region on the substrate 100 x located between the outer edges. Above the column banks 522Y, each of which extends in the column direction (Y direction in FIG. 1), are arranged in a plurality of rows. A plurality of column banks 522Y are juxtaposed in the row direction also above the row edge 119a3 / 200a2 or 119a4 / 200a1 of the pixel electrode 119 and the auxiliary electrode 200 adjacent in the row direction and the region on the substrate 100x located between the outer edges. ing.

  On the other hand, above the region on the substrate 100x located between the outer edges 119a1 / 119a2 of the two pixel electrodes 119 adjacent in the column direction and the column direction, each row extends in the row direction (X direction in FIG. 1). Banks 122X are arranged side by side in a plurality of columns. The region where the row bank 122X is formed becomes the non-self-luminous region 100b because organic electroluminescence does not occur in the light emitting layer 123 above the pixel electrode 119.

  A gap between adjacent column banks 522Y is defined as a gap 522z, a gap corresponding to the self-luminous region 100aR is a red gap 522zR, a gap corresponding to the self-luminous area 100aG is a green gap 522zG, and a gap corresponding to the self-luminous area 100aB is a blue gap. 522zB, the auxiliary gap 522zA in which the auxiliary electrode 200 is laid between the blue gap 522zB and the red gap 522zR (hereinafter, the gap 522zR, the gap 522zG, and the gap 522zB when the gap 522zB is not distinguished).

Further, as shown in FIG. 1, in the display panel 10, a plurality of self-luminous regions 100a and non-self-luminous regions 100b are arranged alternately in the column direction along the gap 522z. The non-self-emitting regions 100b, connecting recesses (contact holes, not shown) for connecting the source S ₁ of the pixel electrode 119 and the TFT are provided.
Further, as shown in FIGS. 1 and 2, in the display panel 10, a plurality of auxiliary electrodes 200 are continuously arranged in the auxiliary gap 522zA between the unit pixels 100e on the substrate 100x in the column direction. On the auxiliary electrode 200 in the auxiliary gap 522zA, a contact layer 202 is provided on the upper surface side, and a plurality of columnar insulators 230 are arranged in a matrix on the upper surface of the contact layer 202. Although details will be described later, the contact layer 202 of the auxiliary electrode 200 and the upper layer common electrode 125 are in contact with each other in a part of a region where the columnar insulator 230 does not exist on the upper surface of the auxiliary electrode 200 in plan view.

<Each component of display panel 10>
The configuration of the organic EL element 100 in the display panel 10 will be described. FIGS. 3, 4, and 5 are schematic cross-sectional views cut along A1-A1, A2-A2, and A3-A3 in FIG. 1, respectively.
In the display panel 10 according to the present embodiment, a substrate (TFT substrate) on which a thin film transistor is formed is formed below the Z-axis direction, and an organic EL element unit is formed thereon.

[Substrate 100x]
The substrate 100x is a support member of the display panel 10, and has a base (not shown) and a thin film transistor layer (not shown) formed on the base.
The substrate is a support member of the display panel 10 and has a flat plate shape. As a material of the base material, a material having an electric insulation property, for example, a glass material, a resin material, a semiconductor material, a metal material coated with an insulating layer, or the like can be used.

The TFT layer includes a plurality of TFTs formed on the upper surface of the base material and wiring (TFT source S1). And a corresponding pixel electrode 119). The TFT electrically connects a corresponding pixel electrode 119 to an external power supply in response to a drive signal from an external circuit of the display panel 10, and has a multilayer structure including an electrode, a semiconductor layer, and an insulating layer. The wiring electrically connects the TFT, the pixel electrode 119, an external power supply, an external circuit, and the like.

[Planarization layer 118]
A flattening layer 118 is provided on the base material and on the upper surface of the TFT layer. The flattening layer 118 located on the upper surface of the substrate 100x flattens the upper surface of the substrate 100x having the unevenness by the TFT layer, fills the space between the wiring and the TFT, and electrically insulates the wiring and the TFT. I have.

In order to connect the pixel electrode 119 and a wiring connected to the source S1 of the corresponding pixel, the planarization layer 118 has a contact hole (not shown) corresponding to the pixel electrode 119 in a part above the wiring. ) Has been established.
[Pixel electrode 119]
As shown in FIG. 2, a pixel electrode 119 is provided for each sub-pixel 100 sec on the flattening layer 118 located on the upper surface of the region 10e in the substrate 100x.

  The pixel electrode 119 supplies carriers to the light-emitting layer 123. For example, when the pixel electrode 119 functions as an anode, it supplies holes to the light-emitting layer 123. In addition, since the display panel 10 is of a top emission type, the pixel electrode 119 has light reflectivity. The shape of the pixel electrode 119 is, for example, a flat plate having a substantially rectangular shape. On a contact hole (not shown) of the flattening layer 118, a connection recess 119c of the pixel electrode 119, in which a part of the pixel electrode 119 is recessed in the direction of the substrate 100x, is formed. 119 and the wiring 110 connected to the source S1 of the corresponding pixel are connected.

[Auxiliary electrode 200]
The auxiliary electrode 200Y is provided to extend in the column direction on the flattening layer 118 in the auxiliary gap 522zA of the column bank 522Y, as shown in FIGS. The auxiliary electrodes 200 are arranged between the pixel electrodes 119 with an interval δX in the row direction. The auxiliary electrode 200Y is an auxiliary electrode layer for reducing the electric resistance of the common electrode 125 by making electrical connection with the common electrode 125.

  The auxiliary electrode 200 includes a lower layer 201 formed on the same layer as the pixel electrode 119 and a contact layer 202 formed on the lower layer 201. Thus, the auxiliary electrode 200 includes the contact layer 202 made of a metal or an alloy thereof that is less oxidizable than the constituent material of the pixel electrode 119, at least in the gap bottom portion 200b where the columnar insulator 230 described below does not exist. The contact layer 202 of the auxiliary electrode 200 is in contact with the common electrode 125 through the missing portion 124 a of the electron transport layer 124 or through the missing portion 124 a of the electron transport layer 124. Alternatively, although the electron transport layer 124 is not lost, the auxiliary electrode has a lower resistance in a portion where the electron transport layer 124 is thinned (thinned portion) than in other portions of the electron transport layer 124. 200 is electrically connected. The missing portion 124a or the thinned portion of the electron transport layer 124 is located on the contact surface 200c near the side wall 230c of the columnar insulator 230 at the gap bottom 200b between the columnar insulators 230 on the upper surface of the contact layer 202.

Here, the thickness of the auxiliary electrode 200 is preferably 100 nm or more and 1000 nm or less in order to obtain a sufficient cross-sectional area for assisting power supply. In the present embodiment, the thickness of the auxiliary electrode 200 is, for example, 400 nm.
The width of the auxiliary electrode 200 is preferably as narrow as possible to increase the light emitting area. It is preferable that the width is at least smaller than the width of the sub-pixel 100se in the X direction. The width of the auxiliary electrode 200 is preferably 30 μm or more and 40 μm or less, and the width of the gap bottom 202 b where no columnar insulator 230 exists on the auxiliary electrode 200 is preferably about 10 μm. When the width of the auxiliary electrode 200 is increased to reduce the wiring resistance, the width of the auxiliary electrode 200X extending in the row direction is larger than the width of the auxiliary electrode 200Y extending in the column direction. Sometimes the effect on the light emitting area is small.

Further, the auxiliary electrodes may be arranged to extend in the row direction so as to connect between the auxiliary electrodes 200 adjacent to the upper surface of the planarization layer 118 between the row banks 122X.
Note that the shape of the auxiliary electrode 200 when viewed in a plan view is not limited to the form provided in the auxiliary gap 522zA of the column bank 522Y so as to extend in the column direction. It may be extended in the row direction, or may be a grid-like form in the matrix direction or another layout.

The details of the contact mode between the auxiliary electrode 200 and the electron transport layer 124 or the common electrode will be described later.
[Hole injection layer 120]
On the pixel electrode 119 and above, as shown in FIG. 2, a hole injection layer 120 is laminated. The hole injection layer 120 has a function of transporting holes injected from the pixel electrode 119 to the hole transport layer 121.

  The hole injection layer 120 includes, in order from the substrate 100x side, a hole injection layer 120A made of a metal oxide formed on the pixel electrode 119 and the auxiliary electrode 200, and holes 522zR, 522zG, and holes injected in the gaps 522zB described later. And a hole injection layer 120B made of an organic material laminated on the layer 120A. The hole injection layers 120A provided in the color subpixel, the green subpixel, and the red subpixel are referred to as a hole injection layer 120AB, a hole injection layer 120AG, and a hole injection layer 120AR, respectively. The upper layers 120B provided in the blue, green, and red sub-pixels are referred to as an upper layer 120BB, an upper layer 120BG, and an upper layer 120BR, respectively.

In the present embodiment, a hole injection layer 120B is provided linearly so as to extend in the column direction in gaps 522zR, 522zG, and 522zB described later. No hole injection layer 120B is provided in the auxiliary gap 522zA.
[Bank 122]
As shown in FIG. 3, a bank made of an insulator is formed so as to cover the edges of the pixel electrode 119, the hole injection layer 120A, and the auxiliary electrode 200. The banks include a column bank 522Y extending in the column direction and arranged in the row direction, and a row bank 122X extending in the row direction and arranged in the column direction (hereinafter, row bank 122X). 122X and the column bank 522Y are referred to as “bank 122” when not distinguished.)

  The shape of the column bank 522Y is a linear shape extending in the column direction, and a cross section cut in parallel with the row direction is a forward tapered trapezoidal shape tapering upward. The column bank 522Y defines an outer edge in the row direction of the light emitting layer 123 formed by blocking the flow of the ink containing the organic compound serving as the material of the light emitting layer 123 in the row direction. The column bank 522Y defines the outer edge of the light emitting area 100a of each sub-pixel 100se in the row direction by the base in the row direction.

  The shape of the row bank 122X is a linear shape extending in the row direction, and a cross section cut in parallel to the column direction is a forward tapered trapezoidal shape tapering upward. The row banks 122X are provided in the row direction so as to penetrate the column banks 522Y, and each has an upper surface at a position lower than the upper surface 522Yb of the column bank 522Y. Therefore, an opening corresponding to the self-luminous region 100a is formed by the row bank 122X and the column bank 522Y.

[Columnar insulator 230]
As shown in FIGS. 3 and 5, a plurality of the columnar insulators 230 are arranged on the auxiliary electrodes 200 in the auxiliary gaps 522zA of the column bank 522Y, at least in a state where each of the columnar insulators is separated in the column direction. Further, a configuration in which a plurality are arranged in a state separated from each other in the row direction may be employed. In the present embodiment, for example, 7 × 3 (21) columnar insulators 230 are formed in the matrix direction between the row banks 122X in the column direction in one auxiliary gap 522zA.

  The shape of the columnar insulator 230 is, for example, a columnar shape having a rectangular upper surface 230a as shown in FIG. is there. The inclination angle φ (see FIG. 13) of the side wall 230c of the columnar insulator 230 with respect to the surface of the contact layer 202 is preferably greater than 90 ° and 140 ° or less. At this time, the ratio of the width of the gap between the adjacent columnar insulators 230 to the thickness of the columnar insulators 230 is preferably 0.5 or more and 2 or less.

  The shape of the upper surface 230a is not limited to the above, and may be a circle or the like, and the number in the matrix direction is not limited to the above. For example, a configuration may be employed in which a plurality of rows are arranged only in the column direction, and the row bank 122X is not provided in the auxiliary gap 522zA. For example, in FIG. A structure in which the insulator 230 is provided may be employed.

[Hole transport layer 121]
As shown in FIG. 3, the hole transport layer 121 is stacked on the hole injection layer 120 in the gaps 522zR, 522zG, and 522zB. The hole transport layer 121 is not provided in the auxiliary gap 522zA. Further, the hole transport layer 121 is also stacked on the hole injection layer 120 in the row bank 122X (not shown). The hole transport layer 121 is in contact with the hole injection layer 120B. The hole transport layer 121 has a function of transporting holes injected from the hole injection layer 120 to the light emitting layer 123. The hole transport layers 121 provided in the gaps 522zR, 522zG, and 522zB are referred to as a hole transport layer 121R, a hole transport layer 121G, and a hole transport layer 121B, respectively.

In the present embodiment, in a gap 522z to be described later, the hole transport layer 121 adopts a configuration provided linearly so as to extend in the column direction, similarly to the hole injection layer 120B. However, the hole transport layer 121 may be configured to be provided intermittently in the column direction within the gap 522z.
[Light-emitting layer 123]
As shown in FIG. 3, a light emitting layer 123 is laminated on the hole transport layer 121. The light-emitting layer 123 is a layer made of an organic compound, and has a function of emitting light when holes and electrons are recombined inside. In the gaps 522zR, 522zG, and 522zB defined by the column bank 522Y, the light emitting layer 123 is provided linearly so as to extend in the column direction. The light emitting layer 123 is not provided in the auxiliary gap 522zA. In the red gap 522zR, the green gap 522zG, and the blue gap 522zB, light emitting layers 123R, 123G, and 123B that emit light of respective colors are formed.

  In the sub-pixel 100se of each color, the light emitting layer 123 of each color exists between the pixel electrode 119 and the common electrode 125, and an optical resonator structure that resonates light from the light emitting layer 123 and emits the light from the common electrode 125 side is formed. The optical distance between the upper surface of the light emitting layer 123 and the upper surface of the pixel electrode 119 is set in accordance with the wavelength of the light emitted from each of the light emitting layers 123R, 123G, and 123B, so that the light components corresponding to each color reinforce each other. An optical resonator structure is formed.

  Since the light emitting layer 123 emits light only in a portion to which carriers are supplied from the pixel electrode 119, the electroluminescent phenomenon of the organic compound does not occur in a range where the row bank 122X which is an insulator exists between the layers. Therefore, in the light emitting layer 123, a portion without the row bank 122X becomes the self light emitting region 100a, and a portion above the side surface and the upper surface 122Xb of the row bank 122X becomes a non self light emitting region.

[Electron transport layer 124]
As shown in FIG. 3, the electron transport layer 124 is formed by laminating the column bank 522Y and the light emitting layer 123 in the gap 522z defined by the column bank 522Y. The electron transport layer 124 is formed so as to be continuous at least over the entire display area of the display panel 10. The electron transport layer 124 has a function of transporting electrons from the common electrode 125 to the light emitting layer 123 and a function of restricting injection of electrons into the light emitting layer 123. The electron transport layer 124 includes an electron transport layer 124A made of a metal oxide, a fluoride, or the like in order from the substrate 100x side, and an electron transport layer 124B mainly composed of an organic substance laminated on the electron transport layer 124A (hereinafter, referred to as an electron transport layer 124B). , The electron transport layers 124A and 124B are collectively referred to as "electron transport layers 124").

  The electron transport layer 124 is also formed on the contact layer 202 of the auxiliary electrode 200 and the columnar insulator 230 covering the auxiliary layer 200 of the contact layer 202, as shown in FIGS. The electron transport layer 124 is formed on the upper surface 230a of the columnar insulator 230. The electron transport layer 124 is also partially formed on the gap bottom (the portion where the columnar insulator 230 does not exist on the contact layer 202 of the auxiliary electrode 200) 200b in the gap 230b between the adjacent columnar insulators 230. Specifically, the electron transport layer 124 is formed in a portion 200a (shielding portion) other than the contact surface 200c near the side wall 230c of the columnar insulator 230 in the gap bottom portion 200b of the adjacent columnar insulator 230. This constitutes a deposition part 124b of the transport layer 124. The portion located on the contact surface 200c near the side wall 230c of the columnar insulator 230 becomes the missing portion 124a. Alternatively, the portion of the electron transport layer 124 located on the contact surface 200c is a thinned portion in which the electron transport layer 124 is made thinner, although it is not lost. The contact layer 202 of the auxiliary electrode 200 is exposed in the missing portion 124a of the electron transport layer 124. Also, the portion of the columnar insulator 230 located on the side wall 230c is missing or thinned.

Note that the thinning of the electron transporting layer 124 means that a part of the columnar insulator 230 located near the side wall 230c does not fall off, but a part of the electron transporting layer 124 has a thickness of 1 nm or less. It indicates that a layered thinned portion (not shown) is formed.
[Common electrode 125]
As shown in FIG. 3, a common electrode 125 is formed on the electron transport layer 124. The common electrode 125 is an electrode common to each light emitting layer 123. The common electrode 125A forms an energization path by sandwiching the light emitting layer 123 in pairs with the pixel electrode 119. The common electrode 125 supplies carriers to the light emitting layer 123, and supplies electrons to the light emitting layer 123, for example, when functioning as a cathode.

  The common electrode 125 is also formed in a region above the auxiliary electrode 200, as shown in FIGS. The common electrode 125 is in direct contact with the contact layer 202 that is exposed at the gap 124a of the electron transport layer 124 at the gap bottom 200b of the adjacent columnar insulator 230. Alternatively, when a part of the electron transport layer 124 cannot be lost, but the missing part 124 a of the electron transport layer 124 is thin, the common electrode 125 In the thinned portion, which is thinned, it is electrically connected to the auxiliary electrode 200 with a lower electric resistance than that of the portion other than the thinned portion.

The common electrode 125 includes, in order from the substrate 100x side, a common electrode 125A containing a metal as a main component and a common electrode 125B made of a metal oxide laminated on the common electrode 125A (hereinafter, the common electrodes 125A and 125B are referred to as common electrodes 125A and 125B. When collectively referred to as “common electrode 125”).
Note that the stacking order of the common electrodes 125A and 125B may be such that the order of 125A and 125B is switched for optical adjustment.

[Sealing layer 126]
A sealing layer 126 is formed so as to cover the common electrode 125. The sealing layer 126 is for suppressing the light emitting layer 123 from being deteriorated by contact with moisture, air, or the like. The sealing layer 126 is provided so as to cover the upper surface of the common electrode 125. In addition, it is necessary that the display has a high light-transmitting property in order to secure a good light-extracting property.

[Joining layer 127]
Above the sealing layer 126 in the Z-axis direction, a color filter substrate 131 in which a color filter layer 132 is formed on the lower main surface of the upper substrate 130 in the Z-axis direction is arranged. I have. The bonding layer 127 has a function of bonding the back panel composed of each layer from the substrate 100x to the sealing layer 126 to the color filter substrate 131 and a function of preventing each layer from being exposed to moisture or air.

[Upper substrate 130]
On the bonding layer 127, a color filter substrate 131 in which a color filter layer 132 is formed on an upper substrate 130 is provided and bonded. Since the display panel 10 is of a top emission type, a light transmissive material such as a cover glass or a transparent resin film is used for the upper substrate 130. Further, the upper substrate 130 can improve the rigidity of the display panel 10 and prevent entry of moisture, air, and the like.

[Color filter layer 132]
On the upper substrate 130, a color filter layer 132 is formed at a position corresponding to each color self-luminous region 100a of the pixel. The color filter layer 132 is a transparent layer provided to transmit visible light of wavelengths corresponding to R, G, and B, and has a function of transmitting light emitted from each color pixel and correcting its chromaticity. Have. For example, in this example, the red, green, and blue filter layers 132R, 132G are located above the self-luminous region 100aR in the red gap 522zR, the self-luminous area 100aG in the green gap 522zG, and the self-luminous area 100aB in the blue gap 522zB. , 132B are formed.

[Light shielding layer 133]
On the upper substrate 130, a light shielding layer 133 is formed at a position corresponding to a boundary between the light emitting regions 100a of each pixel. The light-shielding layer 133 is a black resin layer provided to prevent transmission of visible light of wavelengths corresponding to R, G, and B, and is made of, for example, a resin material containing a black pigment excellent in light absorption and light-shielding properties.

<Components of each part>
An example of the constituent materials of each part will be described.
[Substrate 100x (TFT substrate)]
As the base material 100p, for example, a glass substrate, a quartz substrate, a silicon substrate, a metal substrate such as molybdenum sulfide, copper, zinc, aluminum, stainless steel, magnesium, iron, nickel, gold, silver, a semiconductor substrate such as a gallium arsenide group, A plastic substrate or the like can be employed.

The TFT layer has a TFT circuit formed on the base material 100p, an inorganic insulating layer (not shown) formed on the TFT circuit, and a flattening layer 118. The TFT circuit has a multilayer structure including electrodes, semiconductor layers, and insulating layers formed on the upper surface of the base material.
Known materials can be used for a gate electrode, a gate insulating layer, a channel layer, a channel protective layer, a source electrode, a drain electrode, and the like included in the TFT.

As a material of the planarization layer 118 located on the upper surface of the substrate 100x, for example, an organic compound such as a polyimide-based resin, an acrylic-based resin, a siloxane-based resin, and a novolak-type phenol-based resin can be used.
[Pixel electrode 119]
The pixel electrode 119 is made of a metal material. In the case of the top emission type display panel 10 according to the present embodiment, the thickness is optimally set and the chromaticity of the emitted light is adjusted by adopting the optical resonator structure to increase the luminance. The surface of the pixel electrode 119 has high reflectivity. In the display panel 10 according to the present embodiment, the pixel electrode 119 may have a structure in which a plurality of films selected from a metal layer, an alloy layer, and a transparent conductive film are stacked. As the metal layer, a material having a low sheet resistance and high light reflectivity can be formed of, for example, a metal material containing aluminum (Al). An aluminum (Al) alloy has a high reflectance of 80 to 95% and a small electrical resistivity of 2.82 × 10 ⁻⁸ (10 nΩm), and is suitable as a material for the pixel electrode 119. Further, it is preferable to use a metal layer or an alloy layer containing aluminum as a main component in terms of cost.

As the metal layer, in addition to a metal layer such as an aluminum alloy, for example, silver (Ag) or an alloy containing silver can be used from the viewpoint of high reflectance. For example, APC (an alloy of silver, palladium, and copper), ARA (an alloy of silver, rubidium, and gold), MoCr (an alloy of molybdenum and chromium), and NiCr (an alloy of nickel and chromium) can be used.
When the pixel electrode 119 is made of aluminum or an aluminum alloy, an aluminum oxide layer is formed on the surface.

As a constituent material of the transparent conductive layer, for example, indium tin oxide (ITO), indium zinc oxide (IZO), or the like can be used.
[Auxiliary electrode 200]
The auxiliary electrode 200 is an auxiliary electrode layer for reducing the electric resistance of the common electrode 125 by electrically connecting to the common electrode 125. Therefore, the lower layer 201 of the auxiliary electrode 200 can be made of a material having a small sheet resistance, for example, a metal layer or an alloy layer containing aluminum (Al) as a main component. For example, an aluminum (Al) alloy has a small electric resistivity of 2.82 × 10 ⁻⁸ (10 nΩm), and is suitable as a material for the auxiliary electrode 200 from the viewpoint of cost. The lower layer 201 of the auxiliary electrode 200 may be made of the same material as the pixel electrode 119.

  The contact layer 202 located on the upper surface of the auxiliary electrode 200 is a layer for establishing electrical connection with the common electrode 125 and for suppressing surface oxidation of the auxiliary electrode 200 in the manufacturing process of the light emitting element. Therefore, the auxiliary electrode 200 is made of a material that has a low contact resistance and is less oxidized than the material of the lower layer 201 of the auxiliary electrode 200. For example, it is preferable to be composed of a noble metal such as silver (Ag), gold (Au), and platinum (Pt), or an alloy containing these as a main component. When the lower layer 201 of the auxiliary electrode 200 is made of the same material as the pixel electrode 119, the contact layer 202 is preferably made of a material that is less oxidized than the constituent material of the pixel electrode 119.

[Hole injection layer 120]
The hole injection layer 120A is a layer made of an oxide such as silver (Ag), molybdenum (Mo), vanadium (V), tungsten (W), and nickel (Ni). In the case where the hole injection layer 120A is made of a transition metal oxide, a plurality of oxidation levels are obtained, so that a plurality of levels can be obtained. As a result, hole injection becomes easy and the driving voltage is reduced. be able to.

As described above, for example, a coating film made of an organic polymer solution of a conductive polymer material such as PEDOT (a mixture of polythiophene and polystyrene sulfonic acid) can be used for the hole injection layer 120B.
[Bank 122]
The bank 122 is formed using an organic material such as a resin and has an insulating property. Examples of the organic material used for forming the bank 122 include an acrylic resin, a polyimide resin, and a novolak phenol resin. The bank 122 preferably has organic solvent resistance. More preferably, it is desirable to use an acrylic resin. This is because it has a low refractive index and is suitable as a reflector.

Alternatively, when an inorganic material is used for the bank 122, it is preferable to use, for example, silicon oxide (SiO) from the viewpoint of the refractive index. Alternatively, for example, it is formed using an inorganic material such as silicon nitride (SiN) and silicon oxynitride (SiON).
Further, since the bank 122 may be subjected to an etching process, a baking process, or the like during a manufacturing process, the bank 122 may be formed of a material having high resistance so as not to be excessively deformed or deteriorated in the process. Is preferred.

In addition, the surface can be treated with fluorine in order to impart water repellency to the surface. Further, a material containing fluorine may be used for forming the bank 122. Further, in order to lower the water repellency of the surface of the bank 122, a low temperature baking process may be performed in which the bank 122 is irradiated with ultraviolet rays.
For the bank 122, for example, a positive photosensitive material is used in order to form a forward tapered trapezoidal shape in which the cross section cut in parallel to the row direction is tapered upward. Here, the photosensitive material is a resin that undergoes a chemical change only in a portion irradiated with light, and in a positive photosensitive material, the exposed portion is dissolved in a developing solution to form a forward tapered trapezoidal bank.

[Columnar insulator 230]
The columnar insulator 230 is formed using an organic material such as a resin and has an insulating property. Examples of the organic material used for forming the columnar insulator 230 include an acrylic resin, a polyimide resin, and a novolak phenol resin. The columnar insulator 230 preferably has organic solvent resistance.

Alternatively, when an inorganic material is used for the columnar insulator 230, it is preferable to use, for example, silicon oxide (SiO). Alternatively, for example, it is formed using an inorganic material such as silicon nitride (SiN) and silicon oxynitride (SiON).
Further, since the columnar insulator 230 may be subjected to an etching process, a baking process, or the like during a manufacturing process, the columnar insulator 230 is formed of a material having high resistance so as not to be excessively deformed or deteriorated in the process. Preferably.

  In addition, for the columnar insulator 230, in the middle of the manufacturing process, in order to make the cross section cut in parallel to the row and column directions into an inverted tapered trapezoid shape in which the lower part becomes narrower than the upper part, for example, a negative photosensitive material is used. Used. The photosensitive material is a resin that undergoes a chemical change only in a portion that is exposed to light, and in a negative photosensitive material, the exposed portion does not dissolve in a developing solution. Therefore, when a negative photosensitive material is used, the central portion of the portion to become the columnar insulator 230 is exposed with a sufficient amount of light, so that the central portion becomes insoluble in the developing solution. Rather, the intensity of the light is attenuated in the inner part of the periphery. For this reason, the inner part of the peripheral portion is dissolved in the developing solution, and as a result, an inverted tapered trapezoidal columnar insulator 230 is formed.

[Hole transport layer 121]
The hole transport layer 121 is formed of, for example, a polymer compound such as polyfluorene or a derivative thereof, or an amine-based organic polymer such as polyarylamine or a derivative thereof, or TFB (poly (9,9-di-n-octylfluorene-derivative). alt- (1,4-phenylene-((4-sec-butylphenyl) imino) -1,4-phenylene)) and the like can be used.

[Light-emitting layer 123]
As described above, the light-emitting layer 123 has a function of generating an excited state and emitting light by injecting and recombining holes and electrons. As a material used for forming the light-emitting layer 123, it is necessary to use a light-emitting organic material that can be formed by a wet printing method.
Specifically, for example, an oxinoid compound, a perylene compound, a coumarin compound, an azacoumarin compound, an oxazole compound, an oxadiazole compound, a perinone compound, a pyrrolopyrrole described in Patent Publication (JP-A-5-163488). Compound, naphthalene compound, anthracene compound, fluorene compound, fluoranthene compound, tetracene compound, pyrene compound, coronene compound, quinolone compound and azaquinolone compound, pyrazoline derivative and pyrazolone derivative, rhodamine compound, chrysene compound, phenanthrene compound, cyclopentadiene compound, stilbene compound , Diphenylquinone compounds, styryl compounds, butadiene compounds, dicyanomethylenepyran compounds, dicyanomethylenethiopyran compounds, fluoresceins In compounds, pyrylium compounds, thiapyrylium compounds, selenapyrylium compounds, telluropyrylium compounds, aromatic aldadienes, oligophenylene compounds, thioxanthene compounds, anthracene compounds, cyanine compounds, acridine compounds, metal complexes of 8-hydroxyquinoline compounds, 2- It is preferably formed of a fluorescent substance such as a metal complex of a bipyridine compound, a complex of a Schiff salt and a group III metal, an oxine metal complex, and a rare earth complex.

[Electron transport layer 124]
For the electron transport layer 124, an organic material having a high electron transport property is used. The electron transport layer 124A may include a layer formed of sodium fluoride. Examples of the organic material used for the electron transport layer 124B include π-electron low molecular weight organic materials such as an oxadiazole derivative (OXD), a triazole derivative (TAZ), and a phenanthroline derivative (BCP, Bphen).

The electron transporting layer 124B may include a layer formed by doping an organic material having a high electron transporting property with a doping metal selected from an alkali metal or an alkaline earth metal.
[Common electrode 125]
The common electrode 125A is formed using an electrode in which silver (Ag), aluminum (Al), or the like is thinned.

For the common electrode 125B, a conductive material having a light transmitting property is used. For example, it is formed using indium tin oxide (ITO) or indium zinc oxide (IZO).
[Sealing layer 126]
The sealing layer 126 is formed using, for example, a light-transmitting material such as silicon nitride (SiN) or silicon oxynitride (SiON). Further, a sealing resin layer made of a resin material such as an acrylic resin or a silicon resin may be provided over a layer formed using a material such as silicon nitride (SiN) or silicon oxynitride (SiON).

In the case of a top emission type, the sealing layer 126 needs to be formed of a light transmitting material.
[Joining layer 127]
The material of the bonding layer 127 is made of, for example, a resin adhesive. For the bonding layer 127, a light-transmitting material resin material such as an acrylic resin, a silicon resin, or an epoxy resin can be used.

[Upper substrate 130]
As the upper substrate 130, for example, a light-transmitting material can be used for a glass substrate, a quartz substrate, a plastic substrate, or the like.
[Color filter layer 132]
As the color filter layer 132, a known resin material (for example, as a commercially available product, a color resist manufactured by JSR Corporation) or the like can be used.

[Light shielding layer 133]
The light-shielding layer 133 is made of a resin material containing an ultraviolet-curable resin (for example, an ultraviolet-curable acrylic resin) as a main component and a black pigment added thereto. As the black pigment, for example, a light-shielding material such as a carbon black pigment, a titanium black pigment, a metal oxide pigment, and an organic pigment can be adopted.

<Method for Manufacturing Display Panel 10>
A method for manufacturing the display panel 10 will be described with reference to FIGS. Each of FIGS. 6 to 8, 10, and 11 is a schematic cross-sectional view taken at the same position as A <b> 1-A <b> 1 in FIG. 1, illustrating a state in each step of manufacturing the display panel 10.
[Preparation of substrate 100x]
A substrate 100x on which a plurality of TFTs including the wiring 110 and the wiring are formed is prepared. The substrate 100x can be manufactured by a known TFT manufacturing method (FIG. 6A).

[Formation of Flattening Layer 118]
The constituent material (photosensitive resin material) of the above-described flattening layer 118 is applied as a photoresist so as to cover the substrate 100x, and the surface is flattened to form the flattening layer 118 (FIG. 6B). )).
After forming the planarizing layer 118, a photomask provided with a predetermined opening is overlaid thereon, and ultraviolet light is irradiated thereon to expose the planarizing layer 118 to transfer a pattern of the photomask (not shown). Thereafter, a flattening layer 118 in which the contact hole 118a is patterned is formed by development. The wiring 110 is exposed at the bottom of the contact hole 118a (not shown).

[Formation of Lower Layer 201 of Pixel Electrode 119 and Auxiliary Electrode 200]
After the planarization layer 118 having the contact hole 118a is formed, the lower layer 201 of the pixel electrode 119 and the auxiliary electrode 200 is formed (FIG. 6C).
The pixel electrode 119 and the auxiliary electrode 200 are formed by forming a metal film using a sputtering method or the like and then patterning the metal film using a photolithography method and an etching method.

Specifically, first, after performing pre-film formation cleaning on the surface of the planarization layer 118, a metal film 119x for the pixel electrode for forming the pixel electrode 119 and the auxiliary electrode 200 is formed by the vapor deposition method. A film is formed on the surface of 118. In this example, a film made of aluminum or an alloy containing aluminum as a main component is formed by a sputtering method.
After that, after applying a photoresist layer FR made of a photosensitive resin or the like, a photomask PM having a predetermined opening is placed thereon, and the photoresist is exposed by irradiating ultraviolet rays thereon, and the photoresist is exposed to the photoresist. The pattern of the photomask is transferred, and the photoresist layer FR is patterned by development. Thereafter, the metal film 119x is subjected to a wet etching process via the patterned photoresist layer FR to perform patterning, thereby forming the pixel electrode 119 and the auxiliary electrode 200.

At this time, a connection recess 119c for the pixel electrode 119 is formed by forming a metal film along the inner wall of the contact hole 118a (not shown). As a result, the pixel electrode 119 is in direct contact with the wiring 110 exposed at the bottom of the contact hole 118a, and is in a state of being electrically connected to the electrode of the TFT.
The pixel electrode 119 is preferably formed by a film formation method with excellent step coverage (for example, a sputtering method or a CVD method) so as not to be disconnected at the side surface of the contact hole 118a of the planarization layer 118. In addition, even if the film thickness of the pixel electrode 119 is excessively small even if the film formation method is excellent in step coverage, a step break may occur. Therefore, the film thickness is preferably 70 nm or more. In this example, a film made of aluminum or an alloy containing aluminum as a main component is formed by a sputtering method.

[Formation of Hole Injection Layer 120A]
After forming the pixel electrode 119 and the auxiliary electrode 200, a hole injection layer 120A is formed on the pixel electrode 119 (FIG. 6D).
The hole injection layer 120A is formed by forming a film made of a metal (for example, tungsten) using a vapor phase growth method such as a sputtering method or a vacuum evaporation method, and then oxidizing the film by baking. It is formed by patterning. In this example, the structure is such that tungsten is formed by sputtering.

  In the formation of the hole injection layer 120A, dry etching is performed because, for example, there is a large difference in the wet etching rate between the metal layer 120A 'made of a tungsten oxide film and the metal film 119x made of, for example, an aluminum alloy. Since it is difficult to perform batch processing, tungsten oxide is used for dry etching with argon gas or the like, and aluminum alloy is used for wet etching in this embodiment, but is not limited thereto.

In the manufacturing method according to the present embodiment, the hole injection layer 120A made of a tungsten oxide film containing tungsten oxide having an oxygen defect structure is formed by forming and firing the hole injection layer 120A under predetermined conditions. An occupation level is formed.
Finally, the photoresist layer FR is peeled off to form a laminate of the pixel electrode 119 and the hole injection layer 120A whose outer shapes are patterned into the same shape.

The order of film formation is as follows: after performing pre-film formation cleaning on the surface of the metal film 119x, forming the metal layer 120A ′ for the hole injection layer 120A on the surface of the metal film 119x by a vapor phase growth method, Dry etching and wet etching may be sequentially performed.
Specifically, first, after the planarization layer 118 is formed, pre-film formation cleaning is performed on the surface of the planarization layer 118, and then a metal film for the pixel electrode for forming the pixel electrode 119 and the auxiliary electrode 200 is formed. A metal layer 120A 'for the hole injection layer 120A for forming the hole injection layer 120A is formed on the surface of the metal film 119x by the vapor growth method. After forming the film, after applying a photoresist layer FR made of a photosensitive resin or the like, a photomask PM provided with a predetermined opening is placed, and the photoresist is exposed by irradiating ultraviolet rays thereon, The pattern of the photomask is transferred to the photoresist, and the photoresist layer FR is patterned by development. After that, the metal layer 120A 'is subjected to dry etching through the patterned photoresist layer FR to be patterned to form the hole injection layer 120A. Subsequently, the metal film 119x is subjected to wet etching through the patterned photoresist layer FR and the hole injection layer 120A to perform patterning, thereby forming the pixel electrode 119 and the auxiliary electrode 200.

[Formation of Bank 122]
After forming the hole injection layer 120A, a bank 122 is formed so as to cover the hole injection layer 120A. In the formation of the banks 122, first, the row banks 122X are formed, and then the column banks 522Y are formed so as to form the gaps 522z.
First, in forming the row bank 122, first, a film made of a constituent material (for example, a photosensitive resin material) of the row bank 122X is formed on the hole injection layer 120A by using a spin coating method or the like. Then, the resin film is patterned to form the row banks 122X (FIG. 6E).

The patterning of the row bank 122X is performed by performing exposure using a photomask above the resin film, and performing a developing step and a baking step (about 230 ° C., about 60 minutes).
Next, in the formation process of the column bank 522Y, a film made of a constituent material (for example, a photosensitive resin material) of the column bank 522Y is formed on the hole injection layer 120A and the row bank 122X by using a spin coating method or the like. I do. Then, the gap 522z is formed by arranging a mask above the resin film, exposing the resin film, and then developing the resin film, thereby patterning the resin film and opening the gap 522z to form the column bank 522Y (FIG. 6 ( f)). The column banks 522Y extend in the column direction and are juxtaposed in the row direction with a gap 522z therebetween.

  Specifically, in the step of forming the row bank 522Y, first, a photosensitive resin film made of an organic photosensitive resin material, for example, an acrylic resin, a polyimide resin, a novolac phenol resin, or the like is formed, and then dried. Then, after volatilizing the solvent to some extent, a photomask provided with a predetermined opening is overlapped, and ultraviolet light is irradiated thereon to expose a photoresist made of a photosensitive resin or the like, and the photoresist has a photomask. Transfer the pattern. Next, an insulating layer in which the column bank 522Y is patterned by developing the photosensitive resin is formed by baking (about 230 ° C., about 60 minutes). Generally, a photoresist called a positive type is used. In the positive mold, exposed portions are removed by development. The portions of the mask pattern that are not exposed remain without being developed.

  Here, as described above, the hole injection layer 120A is formed by forming a film made of a metal (for example, tungsten) using a vapor deposition method such as a sputtering method or a vacuum deposition method, and then using a photolithography method and an etching method. Although patterning is performed on a pixel-by-pixel basis, a metal is oxidized in a firing step for the row bank 122X and the column bank 522Y to complete the hole injection layer 120A.

  In manufacturing, the upper limit film thickness of the bank 122X is 1500 nm or less, so that the film thickness variation during manufacturing becomes smaller and the bottom line width can be controlled. In addition, the lower limit film thickness is required to be approximately the same as the film thickness and the bottom line width as the film thickness becomes thinner. When the lower limit film thickness is 200 nm or more, a desired bottom line width due to the restriction of resolution may be obtained. It becomes possible. Therefore, the thickness of the bank 122 is preferably, for example, 200 nm or more and 1500 nm or less from the viewpoint of the manufacturing process. In the present embodiment, the thickness of the bank 122X is about 500 nm.

  The upper limit film thickness of the bank 522Y is desirably 1500 nm or less from the viewpoint of improving productivity by reducing costs in manufacturing. In addition, the lower limit film thickness is required to be approximately the same as the film thickness and the bottom line width as the film thickness becomes thinner. When the lower limit film thickness is 1 μm or more, a desired bottom line width due to the restriction of resolution can be obtained. It becomes possible. In the case of a process involving solution coating, the unevenness of the underlayer improves the uniformity of the film thickness. From this, it is necessary to reduce the level difference of the TFT as much as possible. Therefore, the lower limit film thickness of the insulating film is determined, and the thickness is preferably 500 nm or more. Therefore, it is preferable that the thickness of the bank 522Y is, for example, 500 nm or more and 1500 nm or less from the viewpoint of the manufacturing process. In this embodiment, the thickness is about 1000 nm.

[Formation of Contact Layer 202 of Auxiliary Electrode 200]
The contact layer 202 of the auxiliary electrode 200 is formed by a wet process such as an inkjet method or a gravure printing method, and an ink containing a metal material that is less oxidized than the constituent material of the lower layer 201 of the auxiliary electrode 200 is defined by the column bank 522Y. After application in the auxiliary gap 522zA, the solvent is volatilized and removed. Alternatively, it is performed by firing (FIG. 7A). The method of formation is not limited to this, and may be any method other than the inkjet method or the gravure printing method, such as a dispenser method, a nozzle coating method, a spin coating method, an intaglio printing, or a known method such as letterpress printing, in which the ink is dropped and applied. Good.

The thickness of the contact layer 202 of the auxiliary electrode 200 is preferably several tens nm or more and 1000 nm or less in order to obtain a sufficient cross-sectional area for reducing the contact resistance with the common electrode 125.
[Formation of columnar insulator 230]
After forming the contact layer 202 of the auxiliary electrode 200, a plurality of columnar insulators 230 are formed on the upper surface of the contact layer 202.

First, the columnar insulator 230 is first formed on the substrate 100x on which the contact layer 202 of the auxiliary electrode 200 is formed by using a spin coating method or the like by using a constituent material (for example, a photosensitive resin material) of the columnar insulator 230. Are laminated. Then, the columnar insulator 230 is formed by patterning the resin film (FIG. 7B) (FIG. 7C) (FIG. 7D). The patterning of the columnar insulator 230 is performed by performing exposure using a photomask above the resin film, and performing a development step and a baking step (about 230 ° C., about 60 minutes). Specifically, in the step of forming the columnar insulator 230, first, a photosensitive resin film 230x made of an organic photosensitive resin material, for example, an acrylic resin, a polyimide resin, a novolac phenol resin, or the like is formed. (FIG. 7 (b)), after drying and volatilizing the solvent to some extent, overlaying a photomask provided with a predetermined opening and irradiating ultraviolet rays from above to expose a photoresist made of a photosensitive resin or the like. (FIG. 7C), the pattern of the photomask is transferred to the photoresist. The inclination angle φ of the side wall 230c can be controlled by adjusting the amount of exposure when the columnar insulator 230 is formed. In addition, since it is desirable to control the side wall to have a so-called reverse taper shape, it is preferable to use a negative photosensitive resin material in forming the columnar insulator 230. Next, the shape of the upper surface 230a is patterned by developing the photosensitive resin. The columnar insulator 230 is formed by firing (about 230 ° C., about 60 minutes) the insulator 230x (FIG. 7D).

  In manufacturing, the upper limit film thickness of the columnar insulator 230 is desirably 15000 nm or less from the viewpoint of improving productivity by reducing costs in manufacturing. In addition, the lower limit film thickness is required to be approximately the same as the film thickness and the bottom line width as the film thickness becomes thinner. When the lower limit film thickness is 1 μm or more, a desired bottom line width due to the restriction of resolution can be obtained. It becomes possible. In the case of a process involving solution coating, the unevenness of the underlayer improves the uniformity of the film thickness. From this, it is necessary to reduce the level difference of the TFT as much as possible. Therefore, the lower limit film thickness of the insulating film is determined, and the thickness is preferably 500 nm or more. Therefore, the thickness of the columnar insulator 230 is preferably, for example, 500 nm or more and 15000 nm or less from the viewpoint of the manufacturing process.

[Formation of Contact Layer 202 of Auxiliary Electrode 200]
The contact layer 202 of the auxiliary electrode 200 is formed by a wet process such as an inkjet method or a gravure printing method, and an ink containing a metal material that is less oxidized than the constituent material of the lower layer 201 of the auxiliary electrode 200 is defined by the column bank 522Y. After application in the auxiliary gap 522zA, the solvent is volatilized and removed. Alternatively, it is performed by firing (FIG. 7A). It is preferable to use nano-ink containing metal fine particles of several nm as the ink used for application, and to discharge the ink toward the application target portion using, for example, an inkjet device. However, the forming method is not limited to this, and the ink is dropped and applied by a method other than the inkjet method or the gravure printing method, for example, a known method such as a dispenser method, a nozzle coating method, a spin coating method, an intaglio printing, and a relief printing. You may. Alternatively, the contact layer 202 may be formed by a dry method such as a sputtering method or an evaporation method, and then using a photolithography method and an etching method.

[Formation of organic functional layer]
The hole injection layer 120B, the hole transport layer 121, and the light emitting layer 123 are sequentially formed on the hole injection layer 120A formed in the gap 522z defined by the column bank 522Y including the row bank 122X (FIG. 8). (A)).
The hole injection layer 120B is formed by applying an ink containing a conductive polymer material such as PEDOT (a mixture of polythiophene and polystyrene sulfonic acid) into the gap 522z defined by the row bank 522Y using an inkjet method, and then evaporating the solvent. Let it be removed. Alternatively, it is performed by firing. No hole injection layer 120B is provided in the auxiliary gap 522zA. Thereafter, patterning may be performed for each pixel using a photolithography method and an etching method.

  The hole transport layer 121 is formed by applying an ink containing a constituent material to the gap 522z defined by the row bank 522Y by using a wet process such as an inkjet method or a gravure printing method, and then volatilizing or removing the solvent or baking. Made by The method of applying the ink of the hole transport layer 121 to the gap 522z is the same as the method of the above-described hole injection layer 120B. The hole transport layer 121 is not formed in the auxiliary gap 522zA.

  The light-emitting layer 123 is formed by applying an ink containing a constituent material in a gap 522z defined by the row bank 522Y by using an ink-jet method, and then firing. Specifically, the substrate 100x is mounted on the operation table of the droplet discharge device in a state where the row bank 522Y is along the Y direction, and the plurality of nozzle holes are linearly arranged along the Y direction. This is performed by moving the head 301 relative to the substrate 100x in the X direction and landing the ink droplets 18 from each nozzle hole to the landing target set in the gap 522z between the row banks 522Y. even here. The light emitting layer 123 is not formed in the auxiliary gap 522zA.

  In this step, the inks 123RI, 123GI, and 123BI containing the material of the organic light emitting layer of any of R, G, and B are filled in the gap 522z serving as the sub-pixel formation region by an inkjet method, and the filled ink is decompressed. The light emitting layers 123R, 123G, and 123B are formed by drying under a baking process. At this time, in the application of the ink of the light emitting layer 123, first, a solution for forming the light emitting layer 123 is applied using a droplet discharge device.

  When the application of the ink for forming any of the red light emitting layer, the green light emitting layer, and the blue light emitting layer to the substrate 100x is completed, next, another color ink is applied to the substrate, and then the substrate The process of applying the third color ink is repeatedly performed to sequentially apply the three color inks. Thus, on the substrate 100x, a red light emitting layer, a green light emitting layer, and a blue light emitting layer are repeatedly formed side by side in the horizontal direction of the drawing.

[Formation of Electron Transport Layer 124]
After the formation of the light emitting layer 123, the electron transport layer 124 is formed over the entire surface of the display panel 10 using a vacuum evaporation method or the like (FIG. 8B). The reason for using the vacuum evaporation method is to prevent damage to the light-emitting layer 123 which is an organic film, and in the vacuum evaporation method performed under a high vacuum, molecules to be formed are formed in a straight line in a vertical direction toward a substrate. Because
The electron transport layer 124 is also formed on the upper surface 230a of the columnar insulator 230 and the gap bottom 200b between the columnar insulators 230 on the upper surface of the auxiliary electrode 200 where the columnar insulator 230 is not provided. A portion of the contact surface 200c near the side wall 230c is cut off (stepped), and a cutout portion 124a in which the electron transport layer 124 is not formed occurs. Then, a part of the contact layer 202 of the auxiliary electrode 200 is exposed from the missing portion 124a. A portion where the contact layer 202 of the auxiliary electrode 200 is exposed from the missing portion 124a is defined as a contact surface 200c.

Alternatively, although the electron transport layer 124 is not lost, the portion where the electron transport layer 124 is thinner is electrically connected to the auxiliary electrode 200 with a lower resistance than the other portions of the electron transport layer 124. Have been.
In this specification, in addition to the portion where the contact layer 202 of the auxiliary electrode 200 is exposed from the missing portion 124a, the thickness of the electron transport layer 124 is reduced, and the auxiliary electrode is formed with a lower resistance than the other portions of the electron transport layer 124. If the thickness of the electron transporting layer 124 is excessively small, the electrons directly move from the common electrode 125 to the light emitting layer 123, and the electrons are transferred to the light emitting layer 123. Inability to function to limit injection. Therefore, it is preferable that the electron transport layer 124 be formed to a thickness of 10 nm or more. On the other hand, increasing the thickness of the electron transport layer 124 lowers the transmittance of the electron transport layer 124 and inhibits the occurrence of disconnection. In order not to excessively attenuate the light passing through the electron transport layer 124 and to intentionally generate a step on the auxiliary electrode 200 in the through hole 122Ya of the auxiliary electrode 200, the thickness of the electron transport layer 124 is set to 40 nm. It is preferably formed below. The film thickness of the electron transport layer 124 is an example, and is not limited to the above value, and is set to an appropriate film thickness that is most advantageous for optical light extraction.

The reason why the missing portion 124a occurs will be described later.
[Formation of Common Electrode 125]
After forming the electron transport layer 124, a common electrode 125 is formed so as to cover the electron transport layer 124 (FIG. 8D). The common electrode 125 includes, in order from the substrate 100x side, a common electrode 125A mainly composed of a metal, and a common electrode 125B made of a metal oxide laminated on the common electrode 125A.

First, the common electrode 125A is formed by a CVD (Chemical Vapor Deposition) method, a sputtering method, or a vacuum evaporation method so as to cover the electron transport layer 124. In this example, the common electrode 125A is formed by depositing silver by a vacuum evaporation method.
Next, the common electrode 125B is formed over the common electrode 125A by a sputtering method or the like. In this example, the common electrode 125B has a structure in which a transparent conductive layer such as ITO or IZO is formed by a sputtering method.

  The common electrode 125 is also formed on the upper surface 230a and the side wall 230c of the columnar insulator 230, on the electron transport layer 124 in the field gap 522zA, and on the auxiliary electrode 200. At this time, the common electrode 125 is formed so as to go into the cutout portion 124a of the electron transport layer 124 and directly contact the contact surface 200c of the auxiliary electrode 200 exposed at the cutout portion of the electron transport layer 124. Thus, a part of the auxiliary electrode 200 and the common electrode 125 can be reliably contacted through the missing portion 124c in which a part of the electron transport layer 124 extending in the column direction is extended in the auxiliary gap 522zA. Electrical connection between the electrode 200 and the common electrode 125 can be secured.

Alternatively, the common electrode 125 wraps around a portion (thinned portion) where the electron transport layer 124 is thinned, and is electrically connected to the auxiliary electrode 200 with a lower resistance than the other portions of the electron transport layer 124. Is done.
If the common electrode 125 is excessively thin, it may cause disconnection, so the common electrode 125 is preferably formed to have a thickness of 25 nm or more. On the other hand, since increasing the thickness of the common electrode 125 lowers the transmittance of the common electrode 125, the common electrode 125 is preferably formed to have a thickness of 250 nm or less.

Here, a method of forming the common electrode 125 will be further described.
First, a schematic configuration of the sputtering apparatus 600 will be described with reference to FIG. The sputtering apparatus 600 includes a substrate transfer chamber 610, a film formation chamber 620, and a load lock chamber 630, and performs sputtering by a magnetron sputtering method in the film formation chamber 620. A sputtering gas is introduced into the film formation chamber 620. An inert gas such as Ar (argon) is used as the sputtering gas. In the present embodiment, Ar is used.

On the carrier 621 in the sputtering apparatus 600, a substrate 622 to be formed is set. The substrate 622 is mounted on the carrier 621 by the substrate push-up mechanism 611 in the substrate transfer chamber 610. The carrier 621 on which the substrate 622 is mounted moves linearly at a constant speed on the transfer path 601 from the substrate transfer chamber 610 to the load lock chamber 630 via the film formation chamber 620. In the present embodiment, the moving speed of the carrier 621 is 30 mm / s. Note that the substrate 622 is not heated but is sputtered at room temperature.

A rod-shaped target 623 extending in a direction orthogonal to the transport path 601 is provided in the film forming chamber 620. In the present embodiment, the target 623 is ITO. The target 623 does not need to be in the shape of a rod, but may be in the form of a powder, for example.
The power supply 624 applies a voltage to the target 623. In FIG. 12, the power supply 624 is an AC power supply, but may be a DC power supply or a DC / AC hybrid power supply.

  The inside of the sputtering apparatus 600 is exhausted by the exhaust system 61, and a sputtering gas is introduced into the film forming chamber 620 by the gas supply system 62. When a voltage is applied to the target 623 by the power supply 624, plasma of a sputtering gas is generated and the surface of the target 623 is sputtered. Then, a film is formed by depositing atoms of the sputtered target 623 on the substrate 622.

The gas pressure of Ar, which is a sputtering gas, is, for example, 0.6 Pa, and the flow rate is 100 sccm.
[Formation of Sealing Layer 126]
After forming the common electrode 125, a sealing layer 126 is formed so as to cover the common electrode 125 (FIG. 8D). The sealing layer 126 can be formed by a CVD method, a sputtering method, or the like.

[Formation of Color Filter Substrate 131]
Next, a manufacturing process of the color filter substrate 131 will be exemplified.
A transparent upper substrate 130 is prepared, and a light-shielding layer material (133X) made of a UV-curable resin (for example, UV-curable acrylic resin) as a main component and a black pigment added thereto is added to one of the transparent upper substrates 130. It is applied to the surface (FIG. 10A).

A pattern mask PM having a predetermined opening is superimposed on the upper surface of the applied film 133 'made of the material of the light shielding layer, and ultraviolet light is irradiated from above (FIG. 10B).
Thereafter, the pattern mask PM and the uncured light-shielding layer 133 are removed, developed, and cured to complete the light-shielding layer 133 having, for example, a substantially rectangular cross-sectional shape (FIG. 10C).
Next, a material 132G of a color filter layer 132 (for example, G) mainly containing an ultraviolet curable resin component is applied to the surface of the upper substrate 130 on which the light shielding layer 133 is formed (FIG. 10D), and a predetermined pattern is formed. The mask PM is placed, and ultraviolet irradiation is performed (FIG. 10E).

Thereafter, curing is performed, and the pattern mask PM and the uncured paste 132G are removed and developed, whereby a color filter layer 132G is formed (FIG. 10F).
This process is repeated for each color filter material to form color filter layers 132R and 132B (FIG. 10 (g)). Thus, the color filter substrate 131 is formed.

[Lamination of color filter substrate 131 and rear panel]
Next, the material of the bonding layer 127 mainly composed of an ultraviolet curable resin such as an acrylic resin, a silicon resin, or an epoxy resin is applied to the back panel including the layers from the substrate 100x to the sealing layer 126 (FIG. 11 ( a)).
Subsequently, the applied material is irradiated with ultraviolet light, and the substrates are bonded together in a state where the relative positional relationship between the back panel and the color filter substrate 131 is matched. At this time, care is taken so that gas does not enter between them. After that, when both substrates are fired to complete the sealing step, the display panel 10 is completed (FIG. 11B).

<A configuration in which the auxiliary electrode 200 and the common electrode 125 are in direct contact with each other>
[Generation of disconnection in vacuum deposition]
As described above, in the display panel 10, when the electron transport layer 124 is formed by the vacuum evaporation method or the like, the bottom 200 b of the gap 230 b between the adjacent columnar insulators 230 on the upper surface of the contact layer 202 of the auxiliary electrode 200 is formed. In addition, a portion of the columnar insulator 230 located near the side wall 230c is dropped (stepped), and a missing portion 124a where the electron transport layer 124 is not formed is formed near the sidewall 230c of the gap bottom portion 200b, and the auxiliary electrode 200 is removed from the missing portion 124a. A portion of the gap bottom 200b is exposed. Hereinafter, the reason why the missing portion 124a occurs when the electron transport layer 124 is formed will be described.

  FIG. 12 is a schematic diagram illustrating a vapor deposition device 500 used for forming the electron transport layer 124. As shown in FIG. 12, the vapor deposition apparatus 500 includes a chamber 510. A vacuum pump (not shown) is connected to the chamber exhaust port 510a of the chamber 510, and the inside of the chamber 510 can be maintained at a vacuum. The internal space of the chamber 510 is vertically divided by a partition plate 520, and the substrate 100x is transported on the partition plate 520. On the side wall of the chamber 510, a carry-in port 511b for carrying the substrate 100x into the chamber 510 and a carry-out port 511c for carrying out the substrate 100x from the chamber 510 are provided. The substrate 100x is intermittently carried into the chamber 510 from the carry-in port 511b by the carrying means 512, passes over the partition plate 520, and is carried out from the carry-out port 511c.

Below the partition plate 520 in the chamber 510, an evaporation source 530 for ejecting an evaporation material is provided. The evaporation source 530 includes a heater 540, and the evaporation material ejected from the evaporation source 530 by heating is, for example, a substance that forms a functional layer of an organic EL element, and is an organic substance, an inorganic substance, or a metal. The organic substance is, for example, a material for forming a functional layer of an organic EL element, and includes, for example, an oxadiazole derivative (OXD), a triazole derivative (TAZ), and a phenanthroline derivative (BCP, Bphen). Examples of the inorganic substance include a doped metal selected from an alkali metal and an alkaline earth metal. In addition, in order to form the anode, metal materials such as Al, Ba, Ni, Li, Mg, Au, and Ag, and metal oxide materials such as MgF ₂ , SiO ₂ , and Cr ₂ O ₃ can be used. .

  The partition plate 520 is provided with a window 520a through which the deposition material emitted from the deposition source 530 passes, and the window 520a can be opened and closed by a shutter 521. In such a vapor deposition apparatus 500, while the shutter 521 is opened, the substrate 100x is conveyed while the vapor deposition material is being ejected from the vapor deposition source 530, so that the vapor deposition material ejected from the vapor deposition source 530 passes through the window 520a. Is deposited on the lower surface of the substrate 100x. At this time, the positional relationship between the deposition source 530 and the window 520a is such that a straight line passing from the center of the deposition source 530 to the center of the window 520a is inclined by an angle θ with respect to the normal to the substrate 100x. Accordingly, the deposition material is deposited on the substrate 100x at an incident angle of the average angle θ throughout the deposition time.

  Inside the chamber 510, a sensor 550 for measuring an amount (evaporation rate) of the evaporation material supplied per unit time from the evaporation source 530 toward the substrate 100x is provided. By referring to the evaporation rate of the deposition material measured by the sensor 550, the speed at which the substrate 100x is transported is set. In the case where a deposition material is pattern-deposited on the substrate 100x, the deposition is performed by providing a mask on which a pattern is formed on the lower surface side of the substrate 100x.

  FIG. 13 is an enlarged view around the auxiliary electrode 200 shown in FIG. 4 after the formation of the common electrode 125. In the film formation process of the electron transport layer 124 using the vapor deposition device 500, as shown in FIG. 12, vapor deposition is performed using a vapor deposition source 530 whose center is located at a position inclined by an angle θ from the normal to the substrate 100x. Will be In a vacuum deposition method in which deposition is performed in an atmosphere having a high degree of vacuum, a deposition material goes straight in the atmosphere. In the vapor deposition device 500, the vapor deposition material is supplied from the direction of the vapor deposition source 530 inclined by the angle θ with respect to the substrate, and is deposited on the substrate 100x.

In the display panel 10, as described above, the gap 230b is formed between the adjacent columnar insulators 230 provided on the upper surface of the auxiliary electrode 200. The width of the opening of the gap 230b is such that the width W _{0 at} the bottom surface of the columnar insulator 230 is W ₀ ′ <W ₀ with respect to the width W ₀ ′ at the height of the upper surface of the columnar insulator 230, and Of the side wall 230c with respect to the surface of the contact layer 202 is larger than 90 ° and equal to or smaller than 140 °.

Further, it is preferable that the ratio of the width W _O of the gap between the adjacent columnar insulators 230 to the thickness h of the columnar insulators be 0.5 or more and 2 or less.
By arranging the columnar insulator 230 in this manner, the electron transport layer 124 is missing in a portion of the upper surface of the contact layer 202 of the auxiliary electrode 200 near the side wall 230c of the columnar insulator 230, and the end portions 124a1, A gap 124a where no electron transport layer is formed is formed between a2. In the missing portion 124a, the contact layer 202 of the auxiliary electrode 200 is exposed.

Further, the electron transport layer 124b is formed in a portion 200a (shielding portion) of the bottom surface of the gap 230b between the columnar insulators 230 except for a portion below the cutout 124a in the gap bottom 200b on the upper surface of the auxiliary electrode 200. This portion is located between the ends 124a2, a2.
As described above, the electron transport layer 124 has relatively poor step coverage such that the contact surface 200c is exposed by stepping in the gap bottom 200b on the upper surface of the auxiliary electrode 200 on the bottom surface of the gap 230b between the columnar insulators 230. It is formed by a film forming method (for example, a vacuum evaporation method).

  As described above, according to the method of manufacturing the display panel 10 according to the embodiment, the common electrode 125 is formed in contact with the contact surface 200c of the auxiliary electrode 200 so as to go around the missing portion 124a of the electron transport layer 124. Thereby, the electron transport layer on the light emitting layer can be formed as a common layer, so that patterning such as mask formation in the electron transport layer forming step is not required, and the common electrode 125 and the auxiliary electrode 200 can be formed using a simple manufacturing process. The electrical resistance in the electrical connection with the substrate can be reduced.

  In the thinned portion in which the missing portion 124a of the electron transport layer 124 is not thinned but not thinned out, a portion of the electron transporting layer 124 cannot be lost due to the formation of the missing portion 124a. It is caused by thinning due to cutting. Also in this case, the common electrode 125 is electrically connected to the auxiliary electrode 200 with a lower electric resistance in the thinned part of the electron transport layer 124 on the auxiliary electrode 200 than in the thinned part. Connected.

  Here, as described above, the auxiliary electrode 200 is made of a material that is harder to be oxidized than the constituent material of the lower layer 201, and a process involving firing such as formation of the bank 122 and formation of the columnar insulator 230 is performed by the contact layer 202. This is the order of steps performed after the formation. Therefore, the contact surface 200c of the auxiliary electrode 200 is suppressed from being oxidized in the subsequent manufacturing process, and in the manufactured display panel 10, the electrical connection between the common electrode 125 and the auxiliary electrode 200 through the missing portion 124a is reduced. Electric resistance can be reduced.

[Wrap around in sputtering or CVD]
When the common electrode 125 is formed by a CVD method, a sputtering method, or the like, the common electrode 125 wraps around the missing portion 124a of the electron transport layer 124 and is exposed from the missing portion of the electron transport layer 124. Directly in contact with the contact surface 200c. Hereinafter, the formation of the common electrode 125 will be described.

  The common electrode 125 is formed by a film formation method with excellent step coverage (for example, a sputtering method or a CVD method), so that the common electrode 125 wraps around the missing portion 124a (between the end portions 124a1 and a2) of the electron transport layer 124. It is formed. As a result, as shown in FIG. 13, the common electrode 125 is exposed at the missing portion 124 a (between the ends 124 a 1 and a 2) of the electron transport layer 124 on the auxiliary electrode 200 within the gap 230 b of the columnar insulator 230. It is formed so as to be in direct contact with the contact layer 202 of the auxiliary electrode 200.

At this time, the thickness h of the columnar insulator 230 is formed in the range of 500 nm to 15000 nm, more preferably, 1000 nm to 10000 nm. The opening width W _{0 at} the bottom surface of the gap 230b is not limited, but is formed in the range of 2 μm to 30 μm. In the present embodiment, the thickness h is about 5 μm and the width W ₀ is 6.5 μm, while W ₀ / h is 6.5 μm / 5 μm (1.3).

Accordingly, the ratio of the aperture width W ₀ of the gap 230b to the thickness h of the columnar insulator 230 of the columnar insulator 230 is preferably configured to 0.5 to 2.
With such a shape, the electron transport layer 124 formed on the auxiliary electrode 200 is cut off (cut off) at a part of the gap bottom part 200b in the gap 230b to form a missing part 124a. Specifically, in the electron transport layer 124, the end portions 124a1 and a2 are spaced apart such that the contact surface 200c of the auxiliary electrode 200 is exposed. The common electrode 125 is formed in contact with the contact surface 200c of the auxiliary electrode 200 so as to go around the notch 124a between the ends 124a1 and a2 of the electron transport layer 124. Alternatively, in the thinned portion of the electron transport layer 124 on the auxiliary electrode 200, the electron transport layer 124 is electrically connected to the auxiliary electrode 200 with a lower electrical resistance than the portions other than the thinned portion.

This allows the auxiliary electrode 200 to reduce the electrical resistance in the connection between the auxiliary electrode 200 and the common electrode 125 through the connection through the contact surface 200c. As a result, the voltage effect at the junction between the auxiliary electrode 200 and the common electrode 125 is suppressed to improve the luminous efficiency, and the decrease in luminance at the center of the screen is suppressed, thereby reducing the luminance unevenness.
<Effect of Display Panel 10>
Hereinafter, effects obtained from the display panel 10 will be described.

  The display panel 10 according to the present embodiment includes an auxiliary electrode 200 extending in the column direction on at least one of the gaps between the pixel electrodes 119 adjacent in the row direction on the substrate, and an auxiliary electrode 200. A plurality of pillar-shaped insulators 230 are arranged on the light-emitting layer 123 and the plurality of pillar-shaped insulators 230, and a plurality of pillar-shaped insulators 230 are arranged on the electron-transporting layer 124. A common electrode 125 provided in a continuously extending state, and the auxiliary electrode 200 is formed on at least the upper surface portion 202b where the columnar insulator 230 is not present, by a metal or a metal which is less oxidizable than the constituent material of the pixel electrode 119. The electron transport layer 124 includes a contact layer 202 made of an alloy, and the electron transport layer 124 has a portion 124a located near the side wall 230c of the columnar insulator 230 on the auxiliary electrode 100 is missing or missing. Characterized in that it thinned.

In addition, the common electrode 125 is in contact with the contact layer 202 which is exposed due to the lack of the electron transport layer 124, or in a portion where the electron transport layer 124 is thinned, a portion of the other electron transport layer 124. It is characterized by being electrically connected to the auxiliary electrode 200 with a lower resistance.
Further, the upper surface portion 202b of the auxiliary electrode 200 where the columnar insulator 230 does not exist may be configured as the bottom of the gap 230b between the adjacent columnar insulators 230.

In addition, the auxiliary electrode 200 may be configured to include a lower layer 201 made of the same material as the constituent material of the pixel electrode 119 and a contact layer 202 extending on the upper surface of the lower layer 201 in the column direction.
With such a configuration, a part of the electron transport layer 124 formed on the auxiliary electrode 200 is interrupted (cut off), a part is missing or a missing part 124a, or a thinned part is formed. At the same time, the common electrode 125 is formed in contact with the contact surface 200c of the auxiliary electrode 200 so as to go around the missing portion 124a of the electron transport layer 124. Alternatively, although the electron transport layer 124 is not lost, the portion where the electron transport layer 124 is thinner is electrically connected to the auxiliary electrode 200 with a lower resistance than the other portions of the electron transport layer 124. Have been.

Therefore, an organic EL display panel that can be manufactured using a simple manufacturing process, reduces electric resistance in electrical connection between the common electrode 125 and the auxiliary electrode 200, improves luminous efficiency, and suppresses in-plane luminance unevenness. Can be provided.
Further, the ratio of the width of the gap 230b of the columnar insulator 230 to the thickness of the adjacent columnar insulator 230 may be 0.5 or more and 2 or less. In addition, the electron transport layer 124 is present on portions other than the upper surface 230a of the columnar insulator 230 and the vicinity of the side wall 230c of the columnar insulator 230 in a portion where the columnar insulator 230 does not exist on the auxiliary electrode 200. The portion of the 230 located on the side wall 230c may be missing or thinned.

With such a configuration, the functional layer 124 is cut off in the gap bottom portion 200b located near the side wall 230c of the columnar insulator 230 on the auxiliary electrode 200 by a simple manufacturing process without providing a dedicated step, thereby forming the missing portion 124a. Thus, a structure in which the contact surface 200 of the contact layer 202 of the auxiliary electrode 200 is exposed from the missing portion 124a can be realized.
Further, since the contact surface 200c of the auxiliary electrode 200 is made of a material having a low contact resistance and less oxidized than the constituent material of the lower layer 201 of the auxiliary electrode 200, the contact surface 200c is connected to the common electrode 125 through the missing portion 124c. The electric resistance in the electric connection with the auxiliary electrode 200 can be reduced.

  The method for manufacturing the organic EL display panel 10 according to the present embodiment includes a step of preparing a substrate 100x, a step of arranging a plurality of pixel electrodes 119 in a matrix on the substrate, and a step of forming pixels adjacent to the substrate in a row direction. A step of forming auxiliary electrodes 200 extending in the column direction on at least one of the gaps between the electrodes 119, and a plurality of columnar insulators 230 arranged at least on the auxiliary electrodes 200 in a state of being separated from each other in the column direction. Forming a light-emitting layer 123 containing an organic light-emitting material on each pixel electrode 119, and forming an electron transport layer 124 over the light-emitting layer 123 and over the plurality of columnar insulators 230 by a vacuum deposition method. And forming a common electrode 125 extending continuously on the electron transport layer 124 by a sputtering method or a CVD method to form the auxiliary electrode 200. The extent, in the portion 200b that does not at least columnar insulator 230 is present, and wherein the selectively forming a contact layer 202 made of oxidized refractory metal or an alloy than the material of the pixel electrode 129.

  With this configuration, when the electron transport layer 124 is formed by a vacuum deposition method or the like, the side wall 230 c of the columnar insulator 230 at the bottom 200 b of the gap 230 b between the adjacent columnar insulators 230 on the upper surface of the contact layer 202 of the auxiliary electrode 200. A part located in the vicinity is cut off (stepped), and a cutout 124a in which the electron transport layer 124 is not formed is generated near the side wall 230c of the gap bottom 200b, and a part of the gap bottom 200b of the auxiliary electrode 200 becomes smaller than the cutout 124a. Exposed.

  The common electrode 125 is formed in contact with the contact surface 200c of the auxiliary electrode 200 so as to go around the missing portion 124a. Accordingly, the electron transport layer 124 on the light emitting layer 123 can be formed as a common layer, so that patterning such as mask formation in the electron transport layer forming step is not required, and the common electrode 125 and the auxiliary electrode can be formed using a simple manufacturing process. It is possible to manufacture an organic EL display panel in which the electrical resistance in the electrical connection with the electrode 200 is reduced, the luminous efficiency is improved, and the luminance unevenness is suppressed.

In addition, the method may include a step of forming a bank 122 extending in a column direction in a gap between pixel electrodes 119 adjacent in a row direction on a substrate, and forming a contact layer 202 after the step of forming the bank 122. Good.
With such a configuration, a process involving baking such as formation of the bank 122 is performed in the order of steps performed after the formation of the contact layer 202 of the auxiliary electrode 200. Therefore, the contact surface 200c of the auxiliary electrode 200 may be oxidized in a subsequent manufacturing process. In the thus manufactured display panel 10, the electrical resistance in the electrical connection between the common electrode 125 and the auxiliary electrode 200 can be reduced.

Further, since the contact layer 202 and the bank 122 of the auxiliary electrode 200 are formed before the formation of the light emitting layer 123, it is possible to apply a heat load higher than the heat resistant temperature of the light emitting layer 123 in the step of forming the contact layer 202 and the bank 122. .
Further, since the contact layer 202 and the bank 122 of the auxiliary electrode 200 are formed before the formation of the light emitting layer 123, it is not necessary to prepare a vacuum environment or a nitrogen environment so that the light emitting layer vulnerable to moisture and oxygen does not deteriorate. The auxiliary electrode 200 can be formed in a general atmospheric environment.

  Further, conventionally, when a part of the organic functional layer such as the electron transport layer 124 is removed by irradiating a laser beam, irradiating the functional layer to be removed with the laser beam may cause damage to the auxiliary electrode 200 serving as a base by transmitted light. In addition, there is a problem that the performance of the organic EL element is reduced. When the auxiliary electrode 200 is damaged by the irradiation of the laser beam, for example, burrs are generated and defects occur in sealing in a later process at a portion of the burrs, thereby reducing reliability or changing the film thickness of the auxiliary electrode 200. As a result, the resistance of the auxiliary electrode 200 may be increased, and in the worst case, the auxiliary electrode 200 may disappear and the function may be degraded due to disconnection. On the other hand, in the above manufacturing method, since laser processing or the like is not used, generation of dust during processing can be prevented.

Further, the additional process for lowering the resistance of the upper electrode is only two processes of forming the contact layer 202 of the auxiliary electrode 200 and the bank 122, and the resistance of the common electrode 125 can be easily reduced.
In addition, the contact layer is formed by applying an ink containing a metal or an alloy thereof, which is less oxidizable than the constituent material of the pixel electrode, in at least one of the gaps between the pixel electrodes in a row region extending in the row direction. The ink may be formed by evaporating the solvent contained in the ink.

With such a configuration, the contact layer 202 can be selectively formed at least on the upper surface portion 202b of the base where the columnar insulator 230 does not exist without using patterning such as mask film formation.
In the electron transport layer 124 formed on the auxiliary electrode 200, a notch 124 a where the electron transport layer 124 is not formed is formed near the sidewall 230 c of the gap bottom 200 b of the gap 230 b between the adjacent columnar insulators 230, and The electrode 125 can realize a structure formed in contact with the contact surface 200c of the auxiliary electrode 200 so as to go around the missing portion 124a of the electron transport layer 124.

  Further, since the contact surface 200c of the auxiliary electrode 200 is made of a material that is less oxidized than the constituent material of the lower layer 201 of the auxiliary electrode 200, the contact surface 200c of the auxiliary electrode 200 in the manufacturing process after the formation of the contact layer 202 is formed. Oxidation can be suppressed. As a result, in the manufactured display panel 10, the electrical resistance in the electrical connection between the common electrode 125 and the auxiliary electrode 200 through the missing portion 124 c can be reduced.

In the method of manufacturing the display panel 10, in forming the light emitting layer 123, the light emitting layer 123 is selectively formed only on the pixel electrode 119 using a printing method, and the light emitting layer 123 is formed above the auxiliary electrode 200. The configuration is not performed.
The method of manufacturing the display panel 10 adopts a configuration in which the light emitting layers 123R, G, and B of each color are selectively formed only in the gaps 522zR, G, and B corresponding to the respective sub-pixels by a printing method. Further, in addition to the light emitting layer 123, the hole injection layer 120B and the hole transport layer 121, which are the functional layers, also have a configuration in which the gaps 522zR, G, and B are selectively formed. Therefore, no special manufacturing equipment or process such as masking is required, in contrast to the configuration in which the light emitting layer 123 is not formed in the auxiliary gap 522zA where the auxiliary electrode 200 exists. Therefore, in the method of manufacturing the display panel 10, a configuration in which the light emitting layer 123 is not formed above the auxiliary electrode 200 can be realized without requiring any special manufacturing cost or the like.

<Circuit Configuration of Display Device 1>
Hereinafter, a circuit configuration of the organic EL display device 1 (hereinafter, referred to as “display device 1”) according to the embodiment will be described with reference to FIG.
As shown in FIG. 14, the display device 1 includes an organic EL display panel 10 (hereinafter, referred to as “display panel 10”) and a drive control circuit unit 20 connected thereto.

The display panel 10 is an organic EL (Electro Luminescence) panel using an electroluminescence phenomenon of an organic material, and is configured by arranging a plurality of organic EL elements, for example, in a matrix. The drive control circuit unit 20 includes four drive circuits 21 to 24 and a control circuit 25.
<Circuit Configuration of Display Panel 10>
In the display panel 10, a plurality of unit pixels 100e are arranged in a matrix to form a display area. Each unit pixel 100e is composed of three organic EL elements, that is, three sub-pixels 100se that issue three colors of R (red), G (green), and B (blue). The circuit configuration of each subpixel 100se will be described. FIG. 15 is a circuit diagram illustrating a circuit configuration of the organic EL element 100 corresponding to each subpixel 100se of the display panel 10 used in the display device 1.

As shown in FIG. 15, in the display panel 10 according to the present embodiment, each sub-pixel 100se has two transistors Tr1 and Tr2, one capacitor C, and an organic EL element part EL as a light emitting part. Have been. The transistor Tr1 is a driving transistor, and the transistor Tr2 is a switching transistor.
The gate G2 of the switching transistor Tr2 is connected to the scanning line Vscn, and the source S2 is connected to the data line Vdat. The drain D2 of the switching transistor Tr2 is connected to the gate G1 of the driving transistor Tr1.

The drain D1 of the driving transistor Tr1 is connected to the power supply line Va, and the source S1 is connected to the pixel electrode (anode) of the organic EL element unit EL. The common electrode (cathode) in the organic EL element section EL is connected to the ground line Vcat.
The first end of the capacitor C is connected to the drain D2 of the switching transistor Tr2 and the gate G1 of the drive transistor Tr1, and the second end of the capacitor C is connected to the power supply line Va.

  In the display panel 10, one unit pixel 100e is formed by combining a plurality of adjacent sub-pixels 100se (for example, three sub-pixels 100se of red (R), green (G), and blue (B) emission colors). Then, the unit pixels 100e are arranged so as to be distributed to form a pixel region. A gate line is drawn out from the gate G2 of each sub-pixel 100se, and is connected to a scanning line Vscn connected from outside the display panel 10. Similarly, source lines are drawn from the source S2 of each sub-pixel 100se and connected to a data line Vdat connected from outside the display panel 10.

The power line Va of each sub-pixel 100se and the ground line Vcat of each sub-pixel 100se are collected and connected to the power line and the ground line of the display device 1.
<Modification>
Although the display panel 10 according to the embodiment has been described, the present disclosure is not limited to the above embodiment at all, except for its essential characteristic components. For example, a form obtained by applying various modifications to the embodiment by a person skilled in the art, and a form realized by arbitrarily combining components and functions in each embodiment without departing from the spirit of the present invention are also included. Included in this disclosure. Hereinafter, a modified example of the display panel 10 will be described as an example of such an embodiment.
(1) Modification 1
A display panel 10A according to Modification 1 will be described. In display panel 10 according to the embodiment, auxiliary electrode 200 has lower layer 201 made of the same material as pixel electrode 119, and pixel electrode 119 formed on upper surface of lower layer 201 so as to extend in the column direction. The contact layer 202 is made of a metal or an alloy thereof that is less likely to be oxidized than a material, and the columnar insulator 230 is disposed above the contact layer 202. That is, a configuration is adopted in which the columnar insulator 230 and the contact layer 202 overlap in plan view.

  However, the positional relationship between the auxiliary electrode 200 and the contact layer 202 in plan view is not limited to the mode of the embodiment, and may be appropriately changed. FIG. 16 is a schematic cross-sectional view of the organic EL display panel 10A according to Modification 1 cut along the same position as A1-A1 in FIG. As shown in FIG. 16, in the display panel 10A, the auxiliary electrode 200A has a columnar insulator 230 disposed above and has a lower layer 201 made of the same material as the constituent material of the pixel electrode 119, and an upper surface of the lower layer 201 in plan view. A configuration is adopted in which the contact layer 202A is arranged in an island shape at a portion where the columnar insulator 230 does not exist. That is, the contact layer 202A of the auxiliary electrode 200 is arranged in an island shape at the gap bottom portion 200b between the columnar insulators 230 on the upper surface of the auxiliary electrode 200 where the columnar insulators 230 are not provided in the auxiliary gap 522ZA.

After forming the columnar insulator 230, the display panel 10A is applied with an ink containing a metal material that is less oxidized than the constituent material of the lower layer 201 of the auxiliary electrode 200A in the gap 230b between the adjacent columnar insulators 230. It can be easily produced by removing the solvent by volatilization and baking.
Further, the display panel 10A according to the first modification can be manufactured using a simple manufacturing process as in the embodiment, reducing the electrical resistance in the electrical connection between the common electrode 125 and the auxiliary electrode 200, and reducing the contact layer. The use amount of the constituent material of 202 can be reduced. As described above, the contact layer 202A is made of a metal or an alloy thereof that is less susceptible to oxidation than the constituent material of the pixel electrode 119. For example, a noble metal such as silver (Ag), gold (Au), platinum (Pt), or mainly It is composed of an alloy as a component. Therefore, the material cost can be reduced by adopting a structure in which the contact layer 202A is provided only in the gap bottom 200b and is not used in a portion where the contact with the common electrode 125 cannot be obtained at the bottom of the columnar insulator 230.

Further, the method of manufacturing the display panel 10A according to Modification 1 includes a step of forming the banks 122 extending in the column direction in the gaps between the pixel electrodes 119 adjacent to each other on the substrate in the row direction. After the step of forming the body 230, a configuration of forming the contact layer 202 is adopted.
As a result, since the processes involving firing, such as the formation of the columnar insulator 230, are performed in the order of the steps performed after the formation of the contact layer 202, the oxidation of the contact surface 200c of the auxiliary electrode 200 in the subsequent manufacturing process is further suppressed. Is done. As a result, in the manufactured display panel 10, the electric resistance in the electric connection between the common electrode 125 and the auxiliary electrode 200 can be further reduced.

(2) Modification 2
Regarding the positional relationship between the auxiliary electrode 200 and the contact layer 202 in plan view, another configuration may be adopted. FIG. 17 is a schematic cross-sectional view of the organic EL display panel 10B according to Modification 2 cut at the same position as A1-A1 in FIG. As shown in FIG. 17, in the display panel 10B, the auxiliary electrode 200B is formed of only a contact layer made of a metal or an alloy thereof that is less likely to be oxidized than the constituent material of the pixel electrode 119. The insulator 230 is arranged above the contact layer.

Before forming the bank 122 and the columnar insulator 230, the display panel 10B is formed by depositing a metal material that is less oxidizable than the constituent material of the lower layer 201 of the auxiliary electrode 200 on the upper surface of the planarization layer 118 by a vapor deposition method. Alternatively, it can be easily manufactured by applying an ink containing the metal material, and then volatilizing and removing the solvent, followed by baking.
With such a configuration, similarly to the embodiment, it is possible to manufacture using a simple manufacturing process, and it is possible to reduce the electric resistance in the electrical connection between the common electrode 125 and the auxiliary electrode 200.

<Other modifications>
In the display panel 10 according to the first embodiment, as illustrated in FIGS. 1 and 2, the columnar insulators 230 provided in the auxiliary gaps 522zA include a plurality of columnar insulators 230 having a rectangular cross-sectional shape in plan view. Are arranged in three rows in the column direction at intervals of. However, the columnar insulators 230 may be arranged in a single row or in two rows. Further, the cross-sectional shape of the columnar insulator 230 in plan view may be another shape other than the rectangular shape.

Further, the display panel 10 has a configuration in which the light emitting layer 123 extends continuously on the row bank in the column direction. However, in the above-described configuration, the light-emitting layer 123 may be configured so as to be intermittent for each pixel on the row bank.
In the display panel 10, the color of light emitted from the light emitting layer 123 of the sub-pixel 100se arranged in the gap 522z between the column banks 522Y adjacent in the row direction is different from each other, and the gap between the row banks 122X adjacent in the column direction is set. Have the same color of light emitted from the light-emitting layer 123 of the sub-pixel 100se arranged in the sub-pixel 100se. However, in the above configuration, the color of light emitted from the light emitting layer 123 of the subpixel 100se adjacent in the row direction is the same, and the color of light emitted from the light emitting layer 123 of the subpixel 100se adjacent in the column direction is different from each other. Is also good. Further, the color of light emitted from the light emitting layer 123 of the adjacent sub-pixel 100se in both the row and column directions may be different from each other.

In the display panel 10 according to the embodiment, the pixel 100e has three types of red pixel, green pixel, and blue pixel, but the present invention is not limited to this. For example, one type of light emitting layer may be used, or four types of light emitting layers that emit red, green, blue, and yellow light may be used.
In the above embodiment, the pixels 100e are arranged in a matrix, but the present invention is not limited to this. For example, when the interval between pixel regions is one pitch, the present invention is also effective for a configuration in which pixel regions are shifted by half a pitch in the column direction between adjacent gaps. In a display panel with higher definition, it is difficult to visually discriminate a slight displacement in the column direction. Even if the film thickness unevenness is arranged on a straight line having a certain width (or in a zigzag shape), the displacement becomes band-like. Therefore, even in such a case, the display quality of the display panel can be improved by suppressing the uneven luminance from being arranged in a staggered manner.

  In the above embodiment, the hole injection layer 120, the hole transport layer 121, the light emitting layer 123, and the electron transport layer 124 exist between the pixel electrode 119 and the common electrode 125. Not limited to For example, a configuration in which only the light emitting layer 123 exists between the pixel electrode 119 and the common electrode 125 without using the hole injection layer 120, the hole transport layer 121, and the electron transport layer 124 may be employed. Further, for example, a configuration including a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like, or a configuration including a plurality or all of them at the same time may be used. Further, these layers do not all need to be made of an organic compound, and may be made of an inorganic material or the like.

  In the above embodiment, the light emitting layer 123 is formed by a wet film forming process such as a printing method, a spin coating method, or an ink jet method, but the present invention is not limited to this. For example, a dry film formation process such as a vacuum evaporation method, an electron beam evaporation method, a sputtering method, a reactive sputtering method, an ion plating method, and a vapor phase growth method can be used. Further, a known material can be appropriately used as a material of each component.

  In the above embodiment, the pixel electrode 119 serving as an anode is provided below the EL element portion, and the pixel electrode 119 is connected to the wiring 110 connected to the source electrode of the TFT. It is also possible to adopt a configuration in which the common electrode and the anode are disposed on the upper portion. In this case, the lower cathode is connected to the drain of the TFT.

Further, in the above-described embodiment, the configuration is adopted in which _two transistors Tr ₁ and Tr ₂ are provided for one sub-pixel 100 se, but the present invention is not limited to this. For example, a configuration including one transistor for one subpixel or a configuration including three or more transistors may be employed.
Furthermore, in the above embodiment, the top emission type EL display panel is described as an example, but the present invention is not limited to this. For example, the present invention can be applied to a bottom emission type display panel and the like. In that case, each configuration can be appropriately changed.

≪Supplement≫
Each of the embodiments described above shows a preferred specific example of the present invention.
Numerical values, shapes, materials, constituent elements, arrangement positions and connection forms of constituent elements, steps, order of steps, and the like described in the embodiments are merely examples, and do not limit the present invention. In addition, among the constituent elements in the embodiment, steps not described in the independent claims that indicate the highest concept of the present invention are described as arbitrary constituent elements that constitute a more preferable embodiment.

The order in which the above-described steps are performed is merely an example for specifically describing the present invention, and may be any other order. Further, some of the above steps may be performed simultaneously (in parallel) with other steps.
In addition, for easy understanding of the invention, the scales of the components in each of the drawings described in the above embodiments may be different from actual ones. Further, the present invention is not limited by the description of the above embodiments, and can be appropriately changed without departing from the gist of the present invention.

Further, at least a part of the functions of the embodiments and the modifications thereof may be combined.
Further, various modifications in which the present embodiment is modified within a range conceivable by those skilled in the art are also included in the present invention.

  The organic EL display panel and the organic EL display device according to the present invention can be widely used for devices such as a television set, a personal computer, a mobile phone, and other various electronic devices having a display panel.

DESCRIPTION OF SYMBOLS 1 Organic EL display device 10 Organic EL display panel 100 Organic EL element 100e Unit pixel 100se Subpixel 100a Self-luminous area 100b Non-self-luminous area 100x Substrate (TFT substrate)
118 interlayer insulating layer 119 pixel electrode 120 hole injection layer 120A hole injection layer (lower layer)
120B Hole injection layer (upper layer)
121 Hole transporting layer 122 Insulating layer 122X Row insulating layer 122Xb Upper surface 122Y Column insulating layer 522Y Column bank 123 Light emitting layer 124 Electron transporting layer 124a Missing portion 124b Deposition portion 125 Common electrode 126 Sealing layer 127 Joining layer 128 Color filter layer 130 Upper substrate 131 CF substrate 200 Auxiliary electrode 200a Shielding portion 200b Gap bottom 200c Contact surface 230 Columnar insulator 230a Top surface 230b Columnar insulator gap 230c Side wall 522z Gap between column banks 522zA Auxiliary gap

Claims (15)

An organic EL display panel in which a plurality of pixel electrodes are arranged in a matrix on a substrate, and a light emitting layer containing an organic light emitting material is arranged on each pixel electrode,
An auxiliary electrode extending in a column direction on at least one of gaps between pixel electrodes adjacent to each other in a row direction on the substrate;
A plurality of columnar insulators each arranged on the auxiliary electrode in a state of being separated in the column direction,
A functional layer provided on the light emitting layer and over the plurality of columnar insulators,
A common electrode provided in a state of being continuously extended on the functional layer,
The auxiliary electrode, at least on the upper surface portion where the columnar insulator does not exist, includes a contact layer made of a metal or an alloy thereof that is less oxidized than the constituent material of the pixel electrode,
The functional layer is partially missing or thinner located in the vicinity of the side wall of the columnar insulator on the auxiliary electrode,
The common electrode is in contact with the contact layer that is exposed due to the lack of the functional layer, or in a portion where the functional layer is thinned, with a lower resistance than the other portions of the functional layer. An organic EL display panel electrically connected to the auxiliary electrode. The organic EL display panel according to claim 1, wherein the upper surface portion where the columnar insulator does not exist is a bottom portion of a gap between adjacent columnar insulators. The organic EL display panel according to claim 1, wherein a ratio of a width of a gap between the adjacent columnar insulators to a thickness of the columnar insulator is 0.5 or more and 2 or less. 4. The organic EL display panel according to claim 1, wherein an inclination angle of a side wall of the columnar insulator with respect to a contact layer surface is greater than 90 ° and 140 ° or less. 5. The functional layer is present on the upper surface of the columnar insulator, and other than near the side wall of the columnar insulator on the auxiliary electrode, and a portion located on the side wall of the columnar insulator is missing or The organic EL display panel according to any one of claims 1 to 4, wherein the organic EL display panel is thin. The auxiliary electrode includes a lower layer made of the same material as the constituent material of the pixel electrode, and the contact layer that is arranged on the upper surface of the lower layer so as to extend in a column direction.
The organic EL display panel according to claim 1. The auxiliary electrode,
A lower layer made of the same material as the constituent material of the pixel electrode, wherein the columnar insulator is disposed above, and the contact layer disposed in an island shape in a portion of the upper surface of the lower layer where the columnar insulator does not exist in plan view. Consisting of
The organic EL display panel according to claim 1. The organic EL display panel according to claim 1, wherein the auxiliary electrode includes only the contact layer extending in a column direction. A method for manufacturing an organic EL display panel,
Preparing a substrate;
Arranging a plurality of pixel electrodes in a matrix on the substrate,
Forming an auxiliary electrode extending in the column direction on at least one of the gaps between the pixel electrodes adjacent in the row direction on the substrate;
Forming a plurality of columnar insulators arranged at least on each of the auxiliary electrodes in a state where they are separated from each other in the column direction;
Forming a light emitting layer containing an organic light emitting material on each of the pixel electrodes;
Forming a functional layer over the light emitting layer and over the plurality of columnar insulators by a vacuum evaporation method;
Forming a common electrode extending continuously on the functional layer by a sputtering method or a CVD method,
Including
In the step of forming the auxiliary electrode, a method for manufacturing an organic EL display panel, wherein a contact layer made of a metal or an alloy thereof that is less oxidizable than the constituent material of the pixel electrode is formed at least on an upper surface where the columnar insulator does not exist. . A step of forming a column bank extending in a column direction in a gap between pixel electrodes adjacent in a row direction on the substrate;
The method for manufacturing an organic EL display panel according to claim 9, wherein the contact layer is formed after the step of forming the bank. The method for manufacturing an organic EL display panel according to claim 10, further comprising forming the contact layer after the step of forming the columnar insulator. In the step of forming the functional layer, the functional layer is formed such that a portion of the auxiliary electrode located near the side wall of the columnar insulator is missing or thinned,
In the step of forming the common electrode, the contact layer exposed due to the lack of the functional layer and the common electrode are in direct contact with each other, and in the portion where the functional layer is thinned, The manufacturing of the organic EL display panel according to any one of claims 9 to 11, wherein the common electrode is formed such that the common electrode is electrically connected to the auxiliary electrode with a lower resistance than a layer portion. Method. In the step of forming the functional layer, the upper surface of the columnar insulator, and other than the vicinity of the side wall of the columnar insulator on the auxiliary electrode, there is a portion located on the side wall of the columnar insulator is missing The method for manufacturing an organic EL display panel according to any one of claims 9 to 12, wherein the functional layer is formed so as to be thin or thin. 14. The method of manufacturing an organic EL display panel according to claim 9, wherein a ratio of a width of a gap between adjacent columnar insulators to a thickness of the columnar insulator is 0.5 or more and 2 or less. The method for manufacturing an organic EL display panel according to any one of claims 9 to 14, wherein an inclination angle of a side wall of the columnar insulator with respect to a contact layer surface is larger than 90 ° and equal to or smaller than 140 °.

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