JP7011592B2 - スキャトロメトリ計測におけるプロセス変動の根本原因の解析 - Google Patents

スキャトロメトリ計測におけるプロセス変動の根本原因の解析 Download PDF

Info

Publication number
JP7011592B2
JP7011592B2 JP2018544846A JP2018544846A JP7011592B2 JP 7011592 B2 JP7011592 B2 JP 7011592B2 JP 2018544846 A JP2018544846 A JP 2018544846A JP 2018544846 A JP2018544846 A JP 2018544846A JP 7011592 B2 JP7011592 B2 JP 7011592B2
Authority
JP
Japan
Prior art keywords
measurement
landscape
manufacturing process
parameter
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018544846A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019512869A (ja
JP2019512869A5 (https=
Inventor
タル マルチアーノ
マイケル イー アデル
マーク ギノフカー
バラク ブリンゴルツ
ダナ クライン
タル イツコヴィッチ
ヴィドヤ ラマナサン
ヤナイ カンプ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2019512869A publication Critical patent/JP2019512869A/ja
Publication of JP2019512869A5 publication Critical patent/JP2019512869A5/ja
Application granted granted Critical
Publication of JP7011592B2 publication Critical patent/JP7011592B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/40—Measuring the intensity of spectral lines by determining density of a photograph of the spectrum; Spectrography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J2003/283—Investigating the spectrum computer-interfaced

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2018544846A 2016-02-25 2016-11-01 スキャトロメトリ計測におけるプロセス変動の根本原因の解析 Active JP7011592B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662299693P 2016-02-25 2016-02-25
US62/299,693 2016-02-25
PCT/US2016/059954 WO2017146786A1 (en) 2016-02-25 2016-11-01 Analyzing root causes of process variation in scatterometry metrology

Publications (3)

Publication Number Publication Date
JP2019512869A JP2019512869A (ja) 2019-05-16
JP2019512869A5 JP2019512869A5 (https=) 2019-12-12
JP7011592B2 true JP7011592B2 (ja) 2022-01-26

Family

ID=59685497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018544846A Active JP7011592B2 (ja) 2016-02-25 2016-11-01 スキャトロメトリ計測におけるプロセス変動の根本原因の解析

Country Status (8)

Country Link
US (1) US10203200B2 (https=)
EP (1) EP3420327A4 (https=)
JP (1) JP7011592B2 (https=)
KR (1) KR102430129B1 (https=)
CN (1) CN108700463B (https=)
IL (1) IL260855B (https=)
TW (1) TWI713703B (https=)
WO (2) WO2017146785A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018038892A1 (en) * 2016-08-26 2018-03-01 Applied Materials, Inc. Self-healing semiconductor wafer processing
JP6877541B2 (ja) 2016-11-14 2021-05-26 ケーエルエー コーポレイション 一体型メトロロジツールを有する機能性が強化されたリソグラフィシステム
EP3451061A1 (en) * 2017-09-04 2019-03-06 ASML Netherlands B.V. Method for monitoring a manufacturing process
IL277294B2 (en) * 2018-03-19 2024-05-01 Kla Corp Overlay measurement using multiple wavelengths
US11519869B2 (en) * 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US10962951B2 (en) 2018-06-20 2021-03-30 Kla-Tencor Corporation Process and metrology control, process indicators and root cause analysis tools based on landscape information
WO2020106335A1 (en) 2018-11-21 2020-05-28 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11119417B2 (en) 2018-11-21 2021-09-14 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11249400B2 (en) 2018-12-14 2022-02-15 Kla Corporation Per-site residuals analysis for accurate metrology measurements
US11156846B2 (en) * 2019-04-19 2021-10-26 Kla Corporation High-brightness illumination source for optical metrology
WO2020263391A1 (en) * 2019-06-26 2020-12-30 Kla Corporation Systems and methods for feedforward process control in the manufacture of semiconductor devices
EP4049307A4 (en) * 2019-11-28 2023-12-27 KLA Corporation SYSTEMS AND METHODS FOR METROLOGY OPTIMIZATION BASED ON METROLOGY LANDSCAPES
US11454894B2 (en) 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US12222199B2 (en) 2020-11-05 2025-02-11 Kla Corporation Systems and methods for measurement of misregistration and amelioration thereof
US11861824B1 (en) * 2022-02-03 2024-01-02 Kla Corporation Reference image grouping in overlay metrology
CN120063470B (zh) * 2025-04-29 2025-08-12 上海大学 一种非对称多谐振光纤传感器及其制备方法
CN120183583B (zh) * 2025-05-16 2025-09-02 常州润来科技有限公司 一种稀土微合金化铜管铸坯微孔洞性能测试方法及系统

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6986280B2 (en) * 2002-01-22 2006-01-17 Fei Company Integrated measuring instrument
US8257546B2 (en) * 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
US7463364B2 (en) * 2003-07-31 2008-12-09 Ler Technologies, Inc. Electro-optic sensor
TWI254190B (en) * 2003-09-22 2006-05-01 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
US7397596B2 (en) * 2004-07-28 2008-07-08 Ler Technologies, Inc. Surface and subsurface detection sensor
CN102483582B (zh) * 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
TWI417942B (zh) * 2009-12-17 2013-12-01 Ind Tech Res Inst 二維陣列疊對圖樣組之設計方法、疊對誤差量測方法及其量測系統
US8666703B2 (en) * 2010-07-22 2014-03-04 Tokyo Electron Limited Method for automated determination of an optimally parameterized scatterometry model
NL2009294A (en) * 2011-08-30 2013-03-04 Asml Netherlands Bv Method and apparatus for determining an overlay error.
US10255385B2 (en) 2012-03-28 2019-04-09 Kla-Tencor Corporation Model optimization approach based on spectral sensitivity
GB2500670A (en) * 2012-03-29 2013-10-02 Ibm Method of fabrication of a micro-optics device with curved surface defects
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
TWI598972B (zh) 2012-11-09 2017-09-11 克萊譚克公司 減少散射量測疊對量測技術中演算法之不準確
US9909982B2 (en) * 2013-03-08 2018-03-06 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement
WO2015031337A1 (en) * 2013-08-27 2015-03-05 Kla-Tencor Corporation Removing process-variation-related inaccuracies from scatterometry measurements
NL2013417A (en) * 2013-10-02 2015-04-07 Asml Netherlands Bv Methods & apparatus for obtaining diagnostic information relating to an industrial process.
SG11201703585RA (en) 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
US9903711B2 (en) * 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Bringoltz Barak et al.，Accuracy in optical overlay metrology，Proceedings of SPIE，米国，Society of Photo-Optical Instrumentation Engineers，2016年02月24日，vol.9778，pp.97781H1-97781H19
Gutjahr Karsten et al.，Root cause analysis of overlay metrology excursions with scatterometry overlay technology，Proceedings of SPIE，米国，Society of Photo-Optical Instrumentation Engineers，2016年02月24日，vol.9778，pp.97781M1-97781M10

Also Published As

Publication number Publication date
WO2017146786A1 (en) 2017-08-31
KR102430129B1 (ko) 2022-08-05
CN108700463B (zh) 2021-03-23
JP2019512869A (ja) 2019-05-16
KR20180112064A (ko) 2018-10-11
CN108700463A (zh) 2018-10-23
EP3420327A4 (en) 2019-10-16
TWI713703B (zh) 2020-12-21
US20180023950A1 (en) 2018-01-25
TW201740098A (zh) 2017-11-16
WO2017146785A1 (en) 2017-08-31
IL260855B (en) 2021-09-30
US10203200B2 (en) 2019-02-12
EP3420327A1 (en) 2019-01-02

Similar Documents

Publication Publication Date Title
JP7011592B2 (ja) スキャトロメトリ計測におけるプロセス変動の根本原因の解析
JP7023337B2 (ja) 測定方法
TWI798248B (zh) 在計量量測中之機器學習
US9874527B2 (en) Removing process-variation-related inaccuracies from scatterometry measurements
US11054752B2 (en) Device metrology targets and methods
TWI731038B (zh) 光學計量之準確度提升
KR20200016991A (ko) 오버레이 계측에서 높은 정확도를 달성하기 위한 이미징 기술의 진폭 및 위상 비대칭 추정
EP3853665B1 (en) Estimation of asymmetric aberrations
US10365230B1 (en) Scatterometry overlay based on reflection peak locations

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191030

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20191030

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200910

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20201020

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210629

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210924

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220104

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220114

R150 Certificate of patent or registration of utility model

Ref document number: 7011592

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250