CN108700463B - 分析散射术计量中工艺变动的根本原因 - Google Patents

分析散射术计量中工艺变动的根本原因 Download PDF

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Publication number
CN108700463B
CN108700463B CN201680082361.2A CN201680082361A CN108700463B CN 108700463 B CN108700463 B CN 108700463B CN 201680082361 A CN201680082361 A CN 201680082361A CN 108700463 B CN108700463 B CN 108700463B
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metrology
wafer
root cause
variation
map
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Chinese (zh)
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CN108700463A (zh
Inventor
T·马西安诺
M·E·阿德尔
M·吉诺乌克
B·布林戈尔茨
D·克莱因
T·伊茨科维赫
V·拉马纳坦
J·坎普
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/40—Measuring the intensity of spectral lines by determining density of a photograph of the spectrum; Spectrography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J2003/283—Investigating the spectrum computer-interfaced

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201680082361.2A 2016-02-25 2016-11-01 分析散射术计量中工艺变动的根本原因 Active CN108700463B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662299693P 2016-02-25 2016-02-25
US62/299,693 2016-02-25
PCT/US2016/059954 WO2017146786A1 (en) 2016-02-25 2016-11-01 Analyzing root causes of process variation in scatterometry metrology

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CN108700463A CN108700463A (zh) 2018-10-23
CN108700463B true CN108700463B (zh) 2021-03-23

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US (1) US10203200B2 (https=)
EP (1) EP3420327A4 (https=)
JP (1) JP7011592B2 (https=)
KR (1) KR102430129B1 (https=)
CN (1) CN108700463B (https=)
IL (1) IL260855B (https=)
TW (1) TWI713703B (https=)
WO (2) WO2017146785A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018038892A1 (en) * 2016-08-26 2018-03-01 Applied Materials, Inc. Self-healing semiconductor wafer processing
JP6877541B2 (ja) 2016-11-14 2021-05-26 ケーエルエー コーポレイション 一体型メトロロジツールを有する機能性が強化されたリソグラフィシステム
EP3451061A1 (en) * 2017-09-04 2019-03-06 ASML Netherlands B.V. Method for monitoring a manufacturing process
IL277294B2 (en) * 2018-03-19 2024-05-01 Kla Corp Overlay measurement using multiple wavelengths
US11519869B2 (en) * 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US10962951B2 (en) 2018-06-20 2021-03-30 Kla-Tencor Corporation Process and metrology control, process indicators and root cause analysis tools based on landscape information
WO2020106335A1 (en) 2018-11-21 2020-05-28 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11119417B2 (en) 2018-11-21 2021-09-14 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11249400B2 (en) 2018-12-14 2022-02-15 Kla Corporation Per-site residuals analysis for accurate metrology measurements
US11156846B2 (en) * 2019-04-19 2021-10-26 Kla Corporation High-brightness illumination source for optical metrology
WO2020263391A1 (en) * 2019-06-26 2020-12-30 Kla Corporation Systems and methods for feedforward process control in the manufacture of semiconductor devices
EP4049307A4 (en) * 2019-11-28 2023-12-27 KLA Corporation SYSTEMS AND METHODS FOR METROLOGY OPTIMIZATION BASED ON METROLOGY LANDSCAPES
US11454894B2 (en) 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US12222199B2 (en) 2020-11-05 2025-02-11 Kla Corporation Systems and methods for measurement of misregistration and amelioration thereof
US11861824B1 (en) * 2022-02-03 2024-01-02 Kla Corporation Reference image grouping in overlay metrology
CN120063470B (zh) * 2025-04-29 2025-08-12 上海大学 一种非对称多谐振光纤传感器及其制备方法
CN120183583B (zh) * 2025-05-16 2025-09-02 常州润来科技有限公司 一种稀土微合金化铜管铸坯微孔洞性能测试方法及系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1601386A (zh) * 2003-09-22 2005-03-30 Asml荷兰有限公司 光刻设备、器件制造方法、及由此制造的器件
CN104204944A (zh) * 2012-03-29 2014-12-10 国际商业机器公司 具有弯曲表面缺陷的微光学器件的制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6986280B2 (en) * 2002-01-22 2006-01-17 Fei Company Integrated measuring instrument
US8257546B2 (en) * 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
US7463364B2 (en) * 2003-07-31 2008-12-09 Ler Technologies, Inc. Electro-optic sensor
US7397596B2 (en) * 2004-07-28 2008-07-08 Ler Technologies, Inc. Surface and subsurface detection sensor
CN102483582B (zh) * 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
TWI417942B (zh) * 2009-12-17 2013-12-01 Ind Tech Res Inst 二維陣列疊對圖樣組之設計方法、疊對誤差量測方法及其量測系統
US8666703B2 (en) * 2010-07-22 2014-03-04 Tokyo Electron Limited Method for automated determination of an optimally parameterized scatterometry model
NL2009294A (en) * 2011-08-30 2013-03-04 Asml Netherlands Bv Method and apparatus for determining an overlay error.
US10255385B2 (en) 2012-03-28 2019-04-09 Kla-Tencor Corporation Model optimization approach based on spectral sensitivity
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
TWI598972B (zh) 2012-11-09 2017-09-11 克萊譚克公司 減少散射量測疊對量測技術中演算法之不準確
US9909982B2 (en) * 2013-03-08 2018-03-06 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement
WO2015031337A1 (en) * 2013-08-27 2015-03-05 Kla-Tencor Corporation Removing process-variation-related inaccuracies from scatterometry measurements
NL2013417A (en) * 2013-10-02 2015-04-07 Asml Netherlands Bv Methods & apparatus for obtaining diagnostic information relating to an industrial process.
SG11201703585RA (en) 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
US9903711B2 (en) * 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1601386A (zh) * 2003-09-22 2005-03-30 Asml荷兰有限公司 光刻设备、器件制造方法、及由此制造的器件
CN104204944A (zh) * 2012-03-29 2014-12-10 国际商业机器公司 具有弯曲表面缺陷的微光学器件的制造方法

Also Published As

Publication number Publication date
WO2017146786A1 (en) 2017-08-31
KR102430129B1 (ko) 2022-08-05
JP2019512869A (ja) 2019-05-16
KR20180112064A (ko) 2018-10-11
CN108700463A (zh) 2018-10-23
EP3420327A4 (en) 2019-10-16
TWI713703B (zh) 2020-12-21
US20180023950A1 (en) 2018-01-25
TW201740098A (zh) 2017-11-16
WO2017146785A1 (en) 2017-08-31
IL260855B (en) 2021-09-30
US10203200B2 (en) 2019-02-12
EP3420327A1 (en) 2019-01-02
JP7011592B2 (ja) 2022-01-26

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