JP7006686B2 - Semiconductor devices and methods for manufacturing semiconductor devices - Google Patents

Description

The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.

A power semiconductor module has a structure in which one or more power semiconductor chips are incorporated to form a part or the whole of a conversion connection, and the power semiconductor chip is electrically insulated from a laminated substrate or a metal substrate. It is a power semiconductor device with. Power semiconductor modules are used in motor drive control inverters such as elevators for industrial purposes. Furthermore, in recent years, it has come to be widely used in in-vehicle motor drive control inverters. In-vehicle inverters are required to be compact and lightweight in order to improve fuel efficiency, and to be placed near the drive motor in the engine room, so that long-term reliability in high-temperature operation is required.

The structure of a conventional power semiconductor module will be described by taking a general IGBT (Insulated Gate Bipolar Transistor) power semiconductor module structure as an example.

FIG. 9 is a cross-sectional view showing the configuration of a power semiconductor module having a conventional structure. As shown in FIG. 9, the power semiconductor module includes a power semiconductor chip 1, an insulating substrate 2, an electrode pattern 3, a conductive plate 9, a solder material 14, and a heat radiating plate 5 arranged on the back surface of the insulating substrate 2. A cooling body 7, a metal wire 10, an external terminal 11, a terminal case 12, and a sealing material 13.

The power semiconductor chip 1 is a semiconductor element such as an IGBT or a diode chip. An electrode pattern 3 and a conductive plate 9 are provided on both sides of the insulating substrate 2. The power semiconductor chip 1 is bonded onto the electrode pattern 3 with a solder material 14 which is a bonding material. A heat radiating plate 5 is bonded to the conductive plate 9 on the back surface with a solder material 14. The heat radiating plate 5 is joined to the cooling body 7 provided with the heat radiating fins via the heat radiating grease 6. A substrate provided with an electrode pattern 3 on at least one surface of the insulating substrate 2 is referred to as a laminated substrate. Further, on the upper surface of the power semiconductor chip 1, a metal wire 10 is connected to the electrode pattern 3 as wiring for electrical connection. A metal external terminal 11 for external connection is provided on the upper surface of the electrode pattern 3. Further, in order to protect the insulation of the power semiconductor chip 1, the terminal case 12 is filled with a sealing material 13 such as silicon gel having a low elastic modulus, and is packaged with a lid (not shown).

Here, the in-vehicle power semiconductor module is required to be smaller and lighter than the industrial power semiconductor module due to the limitation of the installation space. Further, since the output power density for driving the motor becomes high, the temperature of the semiconductor chip during operation becomes high, and the demand for long-term reliability during high temperature operation is also increasing. Therefore, there is a demand for a power semiconductor module structure having high temperature operation and long-term reliability.

In the power semiconductor module having the above configuration, a cooling body 7 provided with heat dissipation fins is attached, and the heat generated by the power semiconductor chip 1 accompanying energization is transferred to the heat dissipation fins to dissipate heat to the outside of the system. If the surface of the cooling body 7 and the surface of the heat radiating plate 5 are not in close contact with each other, the contact thermal resistance between the two increases and the heat radiating property deteriorates.

Therefore, in the conventional semiconductor device, in order to ensure high heat dissipation performance, the surface flatness and surface roughness of the heat sink 5 and the cooling body 7 are finished so as to be as small as possible, and further, the heat radiation grease 6 or the like is formed on the surface of the cooling body 7. The thermal resistance between the heat radiating plate 5 and the cooling body 7 is kept low by applying the thermal compound of.

Further, the power semiconductor chip 1 and the electrode pattern 3 and the conductive plate 9 and the heat radiating plate 5 are joined by using a solder material 14. For example, Pb (lead) -free solder is bonded under the power semiconductor chip 1 with flux-containing paste solder or plate solder.

As Pb-free solder used for semiconductor modules, there is a composite solder having a structure in which a metal mesh made of Cu (copper), which is used for temperature layer connection such as die bonding of semiconductor chips, is sandwiched between two solder foils and crimped. (See, for example, Patent Document 1.).

Japanese Unexamined Patent Publication No. 2004-174522

Here, the thermal conductivity of the solder material 14 used for bonding under the power semiconductor chip 1 is 40 to 60 W / m · K. This value is lower than the thermal conductivity of copper of 390 W / m · K. Therefore, there is a problem that the heat generated by the power semiconductor chip 1 due to energization cannot be sufficiently transferred to the electrode pattern 3 and the generated heat cannot reach the heat radiation fins, so that the power semiconductor chip 1 cannot be sufficiently cooled. .. Further, since the thermal conductivity of the solder material 14 is low, there is a problem that the temperature of the solder material 14 itself rises, cracks occur in the solder material 14, the thermal resistance rises, and the heat dissipation performance further deteriorates.

INDUSTRIAL APPLICABILITY The present invention solves the above-mentioned problems caused by the prior art, and thus can efficiently dissipate the heat generated by the power semiconductor chip, and suppress the generation of cracks in the solder and the increase in thermal resistance of the semiconductor device and the semiconductor device. The purpose is to provide a manufacturing method.

In order to solve the above-mentioned problems and achieve the object of the present invention, the semiconductor device according to the present invention has the following features. The semiconductor device has an assembly structure in which a semiconductor element is mounted on a laminated substrate. The bonding layer that joins the semiconductor element and the electrode pattern on the laminated substrate contains metal fibers, and a solder material in which the metal fibers are filled with solder is used . The solder is a Sn- (40 to 70) Bi- (0.1 to 1) Ni, Co solder obtained by adding Ni and Co to a Sn—Bi type solder .

Further, in the semiconductor device according to the present invention, in the above-described invention, the solder material is used as the bonding layer for bonding the semiconductor element and the wiring for electrical connection between the semiconductor element and the electrode pattern on the laminated substrate. It is characterized by being used.

Further, in the semiconductor device according to the present invention, in the above-described invention, the assembled structure further has a heat radiating plate on which the laminated substrate is mounted, and the bonding layer for joining the laminated substrate and the heat radiating plate is the solder. It is characterized in that the material is used.

Further, in the above-described invention, in the semiconductor device according to the present invention, in the bonding layer, the metal fiber contained in the solder material is arranged in the central portion, and from the end portion of the bonding layer to the surface of the electrode pattern. It is characterized in that the metal fibers are not arranged for a predetermined distance in a parallel direction .

Further, the semiconductor device according to the present invention is characterized in that, in the above-described invention, the predetermined distance is 0.1 mm or more and 1 mm or less.

Further, in the above-described invention, in the semiconductor device according to the present invention, in the bonding layer, the metal fibers contained in the solder material are arranged on the semiconductor element, the laminated substrate and the heat radiation plate side, and the metal fibers are arranged. It is characterized in that solder of a predetermined thickness is arranged between them.

Further, the semiconductor device according to the present invention is characterized in that, in the above-mentioned invention, the predetermined thickness is 5 μm or more and 20 μm or less.

Further, the semiconductor device according to the present invention is characterized in that, in the above-described invention, the predetermined thickness is 5% to 20% of the thickness of the solder material.

Further, the semiconductor device according to the present invention is characterized in that, in the above-mentioned invention, the solder does not contain copper.

Further, the semiconductor device according to the present invention is characterized in that, in the above-mentioned invention, the metal fiber is Co-plated.

In order to solve the above-mentioned problems and achieve the object of the present invention, the method for manufacturing a semiconductor device according to the present invention has the following features. First, a step of joining an electrode pattern on a laminated substrate and a semiconductor element using a solder material containing metal fibers and having the metal fibers filled with solder, and mounting the semiconductor element on the laminated substrate. I do. A step of assembling the laminated substrate into a laminated assembly is performed. Next, a step of electrically connecting the semiconductor element and the electrode pattern on the laminated substrate is performed. Next, a step of combining the resin case with the laminated assembly is performed. The solder is a Sn- (40 to 70) Bi- (0.1 to 1) Ni, Co solder obtained by adding Ni and Co to a Sn—Bi type solder .

Further, in the method for manufacturing a semiconductor device according to the present invention, in the above-described invention, in the step of electrically connecting, the semiconductor element and the electrode pattern on the laminated substrate are electrically connected by using the solder material. It is characterized by connecting in a targeted manner.

Further, the method for manufacturing a semiconductor device according to the present invention is characterized in that, in the above-described invention, the laminated substrate is joined to the heat sink of the laminated assembly by using the solder material in the assembling step. ..

According to the above-mentioned invention, the joint portion for joining the power semiconductor element and the electrode pattern is a copper fiber-containing solder material containing copper fibers and the copper fibers are filled with solder. As a result, the thermal conductivity is improved as compared with the paste solder and the plate solder containing flux, so that the heat generated by the power semiconductor chip can be efficiently dissipated. Further, since copper fibers are contained in the solder, even if cracks occur in the solder, the cracks bypass and propagate, so that the life of the solder is improved. Further, since the copper fiber is contained in the solder, it is possible to prevent the fillet from being generated, and the solder is less likely to protrude to the side. Further, since the copper fibers have contacts with each other and form a thermal path, it is possible to suppress an increase in thermal resistance even if cracks occur in the solder. Further, by impregnating the copper fiber member with solder to form a plate solder, the same handling as in the conventional case can be achieved, and the solder thickness can be controlled more uniformly than in the conventional case.

According to the semiconductor device and the method for manufacturing the semiconductor device according to the present invention, it is possible to efficiently dissipate the heat generated by the power semiconductor chip, and to suppress the generation of cracks in the solder and the increase in thermal resistance.

FIG. 1 is a cross-sectional view showing the configuration of a power semiconductor module according to an embodiment. FIG. 2 is a cross-sectional view showing details of a solder material for joining a power semiconductor chip and an electrode pattern (No. 1). FIG. 3 is a cross-sectional view showing details of a solder material for joining a power semiconductor chip and an electrode pattern (No. 2). FIG. 4 is a table showing the results of the power cycle test of the solder according to the embodiment. FIG. 5 is a graph showing the relationship between the solder thickness and the equivalent thermal conductivity. FIG. 6 is a graph showing the relationship between the copper occupancy and the equivalent thermal conductivity. FIG. 7 is a cross-sectional view showing an example of a copper fiber-containing solder material. FIG. 8 is a cross-sectional view of the joint portion of the example of the copper fiber-containing solder material. FIG. 9 is a cross-sectional view showing the configuration of a power semiconductor module having a conventional structure.

Hereinafter, preferred embodiments of the semiconductor device and the method for manufacturing the semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing the configuration of a power semiconductor module according to an embodiment.

(Embodiment)
As shown in FIG. 1, the power semiconductor module is provided on the power semiconductor chip 1, the insulating substrate 2, the electrode pattern 3, the joint portion 4, the heat sink 5, the lead frame wiring 8, and the back surface of the insulating substrate 2. A conductive plate 9 to be arranged is provided. Here, since it is the same as the power semiconductor module having the conventional structure, the description of the cooling body 7, the external terminal 11, the terminal case 12, the sealing material 13, and the like is omitted. In FIG. 1, the power semiconductor chip 1 and the electrode pattern 3 are connected by using the lead frame wiring 8, but the metal wire 10 may be used to connect the power semiconductor chip 1 and the electrode pattern 3 as in the conventional structure.

The power semiconductor chip 1 is a semiconductor element such as an IGBT or a diode chip. An electrode pattern made of a conductive plate such as copper (Cu) on the front surface (power semiconductor chip 1 side) and back surface (heat sink 5 side) of an insulating substrate 2 such as a ceramic substrate that ensures insulation. 3 etc. are provided. A substrate provided with an electrode pattern 3 on at least one surface of the insulating substrate 2 is used as a laminated substrate. The power semiconductor chip 1 is bonded to the electrode pattern 3 at the bonding portion 4. A heat sink 5 is joined to the conductive plate 9 on the back surface at the joint portion 4. The heat radiating plate 5 is joined to a cooling body (not shown) provided with radiating fins. The conductive plate such as copper on the front surface of the laminated substrate is called an electrode pattern, and the conductive plate such as copper on the back surface is called a conductive plate. Further, one end of the lead frame wiring 8 is joined at the joint portion 4 as wiring for electrical connection to the upper surface of the power semiconductor chip 1 (the surface opposite to the surface in contact with the joint portion 4). The other end of the lead frame wiring 8 is joined to the electrode pattern 3. In addition to the above-mentioned locations, the joint portion of the present invention is used in locations where solder materials are used in conventional semiconductor modules.

The joint portion 4 is formed of a metal fiber-containing solder material including a metal fiber member. The metal fiber-containing solder material contains a fibrous metal (hereinafter referred to as metal fiber), and the metal fibers have contacts with each other to form a heat path, and the metal fibers are filled with solder. The metal is preferably a metal having high thermal conductivity, for example, copper. Hereinafter, the fibrous copper is referred to as a copper fiber, and the joint portion 4 is referred to as a copper fiber-containing solder material 4. Hereinafter, copper fibers will be described. Here, the fibrous form means an elongated shape, that is, a shape having an extremely large length with respect to the diameter. In the embodiment, the diameter of one copper fiber is preferably 20 μm or less. The length of the copper fiber is preferably 50 μm or more, more preferably 1 mm or more. This is because the length makes more contact between the copper fibers and tends to form a three-dimensional structure. Further, the length is preferably 10 mm or less, which is about the length of the copper fiber member.

Further, the contact point is a point where the copper fiber of the copper fiber-containing solder material 4 is in contact with another copper fiber. The copper fiber member is formed of a plurality of copper fibers. The copper fiber member may be in the form of a cloth in which copper fibers are woven like a woven fabric, or may be formed in the form of a mesh or a mesh. A plurality of these cloth-like or net-like copper fibers may be laminated. Further, a plurality of fibers may be randomly accumulated and laminated to form a sheet. Further, the laminated sheet shape may be pressed and the copper fibers may be pressure-bonded to each other. Further, it is preferable that these are formed into a sheet shape. The thickness of the sheet-shaped copper fiber member is preferably 50 μm to 200 μm. This is because a predetermined bonding strength can be obtained when the thickness is thicker than 50 μm. Further, when the thickness is 200 μm or more, the thermal resistance itself increases, voids are generated, the thermal conductivity decreases, and the thermal resistance increases. The copper fibers may be filled with a sintered material of silver (Ag) or Cu instead of filling with solder.

As described above, the copper fiber-containing solder material 4 of the embodiment contains copper fibers having contacts with each other and forming a heat path, and is different from the solder material containing spherical copper. The heat path is a path for transferring heat generated by a power semiconductor chip or the like. Solder materials containing spherical copper have fewer heat paths than copper fibers, have higher thermal resistance, and have the same bonding strength as the solder itself. Even if a plate-shaped or foil-shaped metal such as copper is simply placed in the solder, the bonding strength and thermal conductivity unlike those of the copper fiber member-containing solder cannot be obtained. This is because even if a copper plate or the like is placed in the solder, the thickness of the solder layer itself does not change in order to obtain a predetermined bonding strength. That is, the thermal resistance does not change. By impregnating the solder between the three-dimensional copper fibers, the thermal resistance can be lowered and the bonding strength can be further improved.

The copper fiber-containing solder material 4 is a solder formed by weaving copper fibers and sintering them to form a copper fiber member that is folded so that the fibers have contacts with each other, and the copper fiber member is impregnated with solder. It may be made of wood. By soaking the solder in advance, it can be handled as plate solder. Specifically, it is possible to form a copper fiber-containing solder in which a copper fiber member is impregnated with solder in advance, arrange the solder fiber-containing solder between the materials to be joined, and heat and join the solder. Further, when assembling the semiconductor module, the solder and the copper fiber member may be arranged between the materials to be joined and heated to be joined. Here, it is preferable that two or more layers of copper fibers are folded. Folding two or more layers means that there are two or more copper fibers having contacts with each other in the thickness direction (direction from the power semiconductor chip 1 to the heat sink 5). In the example of FIG. 1, the copper fiber is folded into three layers. Here, since the copper is fibrous and folded, the copper occupancy rate is higher than that of the one processed into a mesh shape. For example, in the copper fiber-containing solder material 4, copper is used with respect to the total amount of solder and copper fiber members. The copper occupancy of the fiber member is 22 to 30% by weight. The higher the copper occupancy of the copper fiber member, the better the thermal conductivity, but the smaller the amount of solder impregnated, the worse the bondability. Therefore, the copper occupancy of various forms of copper fiber members is preferably 5 to 50% by weight, more preferably 20 to 30% by weight.

By arranging the copper fiber member in the solder in this way, the thermal conductivity of the copper fiber-containing solder material 4 is improved, and the generated heat can be efficiently dissipated. Further, since copper fibers are contained in the solder, even if cracks occur in the solder, the cracks bypass and propagate, so that the bonding strength is improved. Moreover, since the copper fiber itself has strength, the bonding strength is high. As a result, the life of the solder is improved. Further, by using the above-mentioned sheet-shaped copper fiber member, the thickness of the copper fiber-containing solder material 4 can be made uniform. In the case of conventional soldering only, the power semiconductor chip 1 may be misaligned when placed on the soldering material, or the soldering material may flow during heat bonding, making the thickness of the soldering material 1014 uniform. It was difficult to do. However, by introducing the copper fiber member, the above-mentioned problems can be solved and the thickness of the copper fiber-containing solder material 4 can be made uniform.

Further, the copper fiber-containing solder material 4 is used under the power semiconductor chip 1, that is, in the bonding layer between the power semiconductor chip 1 and the electrode pattern 3 in order to efficiently diffuse the heat generated by the power semiconductor chip 1. Is preferable. Further, the copper fiber-containing solder material 4 may be used as a bonding layer between the conductive plate 9 and the heat radiating plate 5, and as a bonding layer between the power semiconductor chip 1 and the lead frame wiring 8.

In the method for manufacturing a power semiconductor module, first, the power semiconductor chip 1 is mounted on the laminated substrate by joining the power semiconductor chip 1 to the laminated substrate by using the copper fiber-containing solder material 4. Here, the copper fiber-containing solder material 4 may be produced by impregnating the copper fiber member with solder before manufacturing the power semiconductor module. Further, when the power semiconductor chip 1 is bonded to the laminated substrate, the copper fiber member and the solder may be overlapped with each other, for example, the copper fiber member may be sandwiched between the solders to prepare the copper fiber-containing solder material 4.

Next, the power semiconductor chip 1 and the electrode pattern 3 provided on the insulating substrate 2 are electrically connected by the lead frame wiring 8. Next, using the copper fiber-containing solder material 4, these are joined to the heat sink 5, and a laminated assembly including the power semiconductor chip 1, the laminated substrate, and the heat sink 5 is assembled. The resin case is adhered to this laminated assembly with an adhesive such as silicon. The power semiconductor chip 1 and the electrode pattern 3 provided on the insulating substrate 2 may be electrically connected by a metal wire.

Next, the electrode pattern 3 and the metal external terminal 11 are connected with a metal wire, and the resin case is filled with a sealing material such as a hard resin such as epoxy. As a result, the power semiconductor module according to the embodiment shown in FIG. 1 is completed. If the sealing material is not a sealing material such as epoxy resin, a lid is attached to prevent the sealing material from leaking to the outside.

Next, the copper fiber-containing solder material 4 will be described. The copper fiber-containing solder material 4 is arranged on almost the entire back surface of the power semiconductor chip. 2 and 3 are cross-sectional views showing details of a solder material for joining a power semiconductor chip and an electrode pattern. As shown in FIG. 2, the copper fiber member 20 is arranged in the central portion inside the copper fiber-containing solder material 4. Further, the solder 23 containing no copper fiber may be arranged on the power semiconductor chip 1 or the electrode pattern 3 side. In this case, the thickness of each solder 23 is preferably 25 μm to 100 μm. This is because the bonding strength and the reduction of voids can be achieved at the same time by setting the range within this range. This is because the heat generated by the power semiconductor chip 1 is dissipated from the central portion where the copper fiber member 20 is arranged. Here, by separating the copper fiber member 20 from the end portion of the copper fiber-containing solder material 4 by a predetermined distance d, voids can be reduced and bondability can be improved. The copper fiber member 20 has a structure in which copper fibers are complicatedly bent and intersect with each other, and there is a deficiency. At the time of heat bonding, the solder is impregnated into the copper fiber member 20, but tends to become a void in the vicinity of the void. However, it is presumed that the voids are easily discharged by separating them by a predetermined distance d, and as a result, the voids are reduced. The distance d is preferably 0.1 mm or more and 1 mm or less regardless of the size of the power semiconductor chip 1. More preferably. It is 0.2 mm or more. This is because if it is shorter than 0.1 mm, voids are generated, the bondability with the electrode pattern 3 is deteriorated, and control becomes difficult.

Further, as shown in FIG. 3, the solder 23 may be sandwiched between the copper fiber members 20 inside the copper fiber-containing solder material 4. In this case, there is a layer of solder 23 having a predetermined thickness t between the layers of the copper fiber member. In this embodiment, the copper fiber member 20 is arranged on the power semiconductor chip 1 and the electrode pattern 3 side, so that the thermal conductivity is improved. For example, in the form of FIG. 3, the thermal conductivity is improved as compared with the form of FIG. 2 in which the solder 23 is present on the power semiconductor chip 1 or the electrode pattern 3 side. Further, with this structure, voids are less likely to occur in the vicinity of the copper fiber member 20. The thickness t of the central portion is preferably 5 μm or more and 20 μm or less. This is because if it is 20 μm or more, the thermal resistance increases, and if it is 5 μm or less, voids are likely to occur. The thickness t is preferably 5% to 20% in proportion to the thickness of the copper fiber-containing solder material 4.

Further, in the solder of the copper fiber-containing solder material, by using the solder having a specific composition, the effects of bonding strength and thermal characteristics can be produced. For example, in the solder of the copper fiber-containing solder material 4, heat is transferred by the copper fibers, so a Cu-free solder that suppresses the diffusion of copper and the copper alloy of the copper fibers is preferable. For example, when copper in a copper fiber alloys with tin (Sn) and diffuses, the heat transfer portion decreases and the thermal conductivity decreases, so that diffusion of copper and copper alloy can be suppressed. Nickel (Ni) and cobalt (Co) Is preferably put in the solder. Note that Cu-free means that Cu is not contained except for impurities.

As a specific solder composition, Sn- (5 to 10) Sb- (0.1 to 1) Ni and Co solders in which Ni and Co are added to Sn—Sb (antimony) solder (Example 1). It is preferable to use. The unit here is weight% (wt%). For example, in Example 1, Sb is contained in the solder in an amount of 5 to 10% by weight. Further, since Ni and Co have the same effect, only Ni may be added or only Co may be added. Further, it is more preferable that Ni and Co are contained in the solder in an amount of 0.2 to 0.5% by weight.

It is also preferable to use Sn- (40 to 70) Bi- (0.1 to 1) Ni and Co solders (Example 2) in which Ni and Co are added to the Sn—Bi (bismuth) type solder. Since the solder having this composition is brittle, it cannot normally be used for joining the power semiconductor chip 1, but it has sufficient strength when used together with a copper fiber member as in the embodiment, and joins the power semiconductor chip 1. Can be used for. Further, Ni and Co are the same as those of Sn—Sb type solder.

It is also preferable to use Sn- (1 to 6) Ag- (0.1 to 1) Ni and Co solders (Example 3) in which Ni and Co are added to Sn-Ag (silver) -based solder. Further, Ni and Co are the same as those of Sn—Sb type solder.

Further, in the above, the diffusion of copper and the copper alloy of the copper fiber was suppressed by adding Ni and Co to the solder, but the same effect can be obtained by plating the copper fiber with Ni or Co. can.

FIG. 4 is a table showing the results of the power cycle test of the solder according to the embodiment. In addition to the solders of Examples 1 to 3 above, Sn—Sb—Cu—Ni-based solders were also tested as comparative examples. Further, in the case of Example 1, it was also tested that Ni and Co were contained in the solder in an amount of 0.4% by weight. In the power cycle test, the power was repeatedly turned on and off, and the number of times the thermal resistance increased by 20% or more from the initial stage was measured.

As shown in FIG. 4, in the case of Examples 1 to 3, the thermal resistance did not increase by 20% or more from the initial stage even when the power was turned on / off 100,000 times or more. In particular, when Ni and Co were contained in the solder in an amount of 0.4% by weight, the thermal resistance did not increase by 20% or more from the initial stage even after repeating 200,000 times or more. On the other hand, in the case of the comparative example, the thermal resistance increased by 20% or more from the initial stage after repeating 50,000 times or less. From this, it was found that the use of the solders of Examples 1 to 3 produces the effects of bonding strength and thermal characteristics.

Next, the effect of the present invention was confirmed by an actual example. First, the thickness of the solder to be formed by sandwiching the solder from above and below on the copper fiber member 20 is determined. FIG. 5 is a graph showing the relationship between the solder thickness and the equivalent thermal conductivity. The horizontal axis is the total thickness of the upper and lower solders, the unit is μm, the vertical axis is the equivalent thermal conductivity, and the unit is W / m · K. Here, the equivalent thermal conductivity is a thermal conductivity given by regarding a component made of a plurality of materials as one block. The distance d from the end of the copper fiber-containing solder material 4 to the end of the copper fiber member was set to 0.5 mm.

In FIG. 5, the thermal conductivity of solder is 40 W / m · K, the thermal conductivity of copper is 390 W / m · K, the copper occupancy of the copper fiber member is 22%, and the thickness of the copper fiber member is 100 μm. It is the calculation result of the case. As shown in FIG. 5, the relationship between the equivalent thermal conductivity y and the total thickness x of the upper and lower solders is
y = 113.04x ^-0.151
It is represented by. For example, when the thickness of the upper solder, the thickness of the copper fiber member, and the thickness of the lower solder are 10 μm, 100 μm, and 10 μm, respectively, the equivalent thermal conductivity is about 80 W / m · K, and the solder alone. It is about twice as much as 40 W / mK. Further, when it is set to 20 μm, 100 μm, and 20 μm, respectively, the equivalent thermal conductivity is about 72 W / m · K.

FIG. 6 is a graph showing the relationship between the copper occupancy and the equivalent thermal conductivity. The horizontal axis is the copper occupancy rate, the unit is weight%, the vertical axis is the equivalent thermal conductivity, and the unit is W / m · K. Here, the copper occupancy rate is the weight% of the copper contained in the copper fiber member, and the rest is the weight of the solder. In FIG. 6, the straight line of ● is equivalent to the copper occupancy rate x when the thickness of the upper solder, the thickness of the copper fiber member, and the thickness of the lower solder are 10 μm, 100 μm, and 10 μm, respectively. It is the relationship with the rate y, in this case
y = 3.25x + 6.6667
It is represented by. Further, the straight line of ◯ is the relationship between the copper occupancy rate x and the equivalent thermal conductivity y when the values are 50 μm, 100 μm, and 50 μm, respectively. In this case,
y = 1.95x + 20
It is represented by. From FIG. 6, it can be seen that in the case of the straight line of ●, when the copper occupancy is 22% by weight, the equivalent thermal conductivity is about 80 W / m · K.

Based on the above results, the results obtained by sandwiching a Sn—Sb-based solder having a thickness of 10 μm from above and below on a copper fiber member 20 having a thickness of 100 μm are shown. FIG. 7 is a cross-sectional view showing an embodiment of the copper fiber-containing solder material 4. As shown in FIG. 7, in the copper fiber-containing solder material 4, the copper fiber portion 22 is folded so that the copper fibers have contacts with each other, and the solder dipping portion 21 in which the solder has penetrated between the copper fiber members 20. It consists of.

FIG. 8 is a cross-sectional view of the joint portion of the example of the copper fiber-containing solder material. In FIG. 8, the right figure is an enlarged view of the center of the left figure. As shown in FIG. 8, it can be seen that the copper fiber members 20 have contacts with each other and the copper fiber members 20 are filled with solder 23. The thermal conductivity of the copper fiber-containing solder material thus produced is calculated to be 72.2 W / m · K. As a result of actual measurement by the laser flash method, the thermal conductivity is about 40 W / m · K only with the Sn—Sb type solder, but the thermal conductivity is up to 75.8 W / m · K with the copper fiber-containing solder material. I confirmed that it was improved. Here, in the laser flash method, the thermal diffusivity is obtained by uniformly pulse-heating the surface of a flat plate sample placed in an adiabatic vacuum and observing a one-dimensional thermal diffusivity phenomenon from the front surface to the back surface. The method.

As described above, according to the semiconductor device according to the embodiment, the joint portion for joining the power semiconductor element and the electrode pattern contains copper fibers, and the copper fibers are filled with solder. It is a solder material. As a result, the thermal conductivity is improved as compared with the paste solder and the plate solder containing flux, so that the heat generated by the power semiconductor chip can be efficiently dissipated. Further, since copper fibers are contained in the solder, even if cracks occur in the solder, the cracks bypass and propagate, so that the life of the solder is improved. Further, since the copper fiber is contained in the solder, it is possible to prevent the fillet from being generated, and the solder is less likely to protrude to the side. Further, since the copper fibers have contacts with each other and form a thermal path, it is possible to suppress an increase in thermal resistance even if cracks occur in the solder. Further, by impregnating the copper fiber member with solder to form a plate solder, the same handling as in the conventional case can be achieved, and the solder thickness can be controlled more uniformly than in the conventional case.

Further, in the copper fiber-containing solder material, the internal copper fiber is arranged in the central portion, the internal copper fiber is arranged away from the power semiconductor element and the electrode pattern, and the copper fiber is arranged at the end of the copper fiber-containing solder material. Is not placed. As a result, the heat generated by the power semiconductor chip can be dissipated from the central portion where the copper fibers are arranged, voids can be reduced, and bondability can be improved.

Further, the copper fiber-containing solder material is joined by sandwiching the solder with copper fibers, and the copper fibers are arranged on the power semiconductor chip or the electrode pattern side. This further improves thermal conductivity. In the case of the structure in which the solder is sandwiched between the copper fiber members, the thermal conductivity is improved by about 5% as compared with the above result in which the copper fiber member is sandwiched between the solders. The copper fiber member and the solder had the same thickness. In addition, voids are less likely to occur in the vicinity of the copper fiber.

The composition of the solder contained in the copper fiber-containing solder material is Sn- (5 to 10) Sb- (0.1 to 1) Ni, Co, Sn- (40 to 70) Sb- (0.1 to 1). ) Ni, Co, or Sn- (1 to 6) Sb- (0.1 to 1) Ni, Co. With Ni and Co, the diffusion of copper and copper alloys of copper fibers can be suppressed, and the decrease in thermal conductivity can be suppressed. Further, by using these solders, the effects of bonding strength and thermal characteristics can be produced.

Further, the copper fiber may be Ni-plated or Co-plated. With Ni and Co, the diffusion of copper and copper alloys of copper fibers can be suppressed, and the decrease in thermal conductivity can be suppressed.

As described above, the semiconductor device and the method for manufacturing the semiconductor device according to the present invention are useful for power conversion devices such as inverters, power supply devices for various industrial machines, and power semiconductor devices used for igniters of automobiles. be.

1 Power semiconductor chip 2 Insulated substrate 3 Electrode pattern 4 Joint (copper fiber-containing solder material)
5 Heat sink 6 Thermal paste 7 Cooler 8 Lead frame wiring 9 Conductive plate 10 Metal wire 11 External terminal 12 Terminal case 13 Encapsulation material 14 Solder material 20 Copper fiber member 21 Solder immersion part 22 Copper fiber part 23 Solder

Claims (13)

In a semiconductor device having an assembly structure in which a semiconductor element is mounted on a laminated substrate,
The bonding layer that joins the semiconductor element and the electrode pattern on the laminated substrate contains metal fibers, and a solder material in which the metal fibers are filled with solder is used.
The solder is a semiconductor device characterized by being a Sn- (40 to 70) Bi- (0.1 to 1) Ni, Co solder obtained by adding Ni and Co to a Sn—Bi type solder . The semiconductor according to claim 1, wherein the solder material is used as the bonding layer for joining the semiconductor element and the wiring for electrical connection between the semiconductor element and the electrode pattern on the laminated substrate. Device. The assembled structure further comprises a heat sink on which the laminated substrate is mounted.
The semiconductor device according to claim 1 or 2, wherein the solder material is used as the bonding layer for joining the laminated substrate and the heat sink. In the bonding layer, the metal fibers contained in the solder material are arranged in the central portion.
The semiconductor device according to any one of claims 1 to 3, wherein the metal fiber is not arranged from the end of the bonding layer in a direction parallel to the surface of the electrode pattern for a predetermined distance. .. The semiconductor device according to claim 4, wherein the predetermined distance is 0.1 mm or more and 1 mm or less. In the bonding layer, the metal fibers contained in the solder material are arranged on the semiconductor element, the laminated substrate, and the heat radiating plate side, and solder having a predetermined thickness is arranged between the metal fibers. The semiconductor device according to any one of claims 1 to 3, wherein the semiconductor device is characterized. The semiconductor device according to claim 6, wherein the predetermined thickness is 5 μm or more and 20 μm or less. The semiconductor device according to claim 6, wherein the predetermined thickness is 5% to 20% of the thickness of the solder material. The semiconductor device according to any one of claims 1 to 8, wherein the solder does not contain copper. The semiconductor device according to any one of claims 1 to 8, wherein the metal fiber is Co-plated. A step of joining an electrode pattern on a laminated substrate and a semiconductor element using a solder material containing metal fibers and having the metal fibers filled with solder, and mounting the semiconductor element on the laminated substrate.
The process of assembling the laminated substrate into a laminated assembly and
A step of electrically connecting the semiconductor element and the electrode pattern on the laminated substrate,
The process of combining the resin case with the laminated assembly and
Including
The method for manufacturing a semiconductor device, wherein the solder is a Sn- (40 to 70) Bi- (0.1 to 1) Ni, Co solder obtained by adding Ni and Co to a Sn—Bi-based solder. .. The semiconductor device according to claim 11, wherein in the step of electrically connecting, the semiconductor element and the electrode pattern on the laminated substrate are electrically connected by using the solder material. Production method. The method for manufacturing a semiconductor device according to claim 11 or 12, wherein in the assembling step, the laminated substrate is joined to a heat sink of the laminated assembly by using the solder material.

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