JP6968001B2 - Resin composition and semiconductor device for semiconductor encapsulation for transfer compression molding method - Google Patents

Description

The present invention relates to a resin composition for encapsulating a semiconductor for a transfer compression molding method and a semiconductor device.

With the increasing integration, higher functionality, and higher speed of electronic devices, electronic components are also becoming smaller and higher in density. Semiconductor devices have also become smaller and higher in density, the volume occupied by the semiconductor device package has increased, and the wall thickness of the coating covering the semiconductor device has become thinner. In particular, packages for fingerprint sensors and memories are required to have a coating thickness of 100 μm or less on the upper surface of the semiconductor element. In addition, as semiconductor devices become more multifunctional and have a larger capacity, the chip area and pins are increasing, and as the number of electrode pads increases, the pad pitch and pad size are reduced, so-called narrow pad pitch. It is progressing.

The sealing method of the semiconductor device, transfer molding, injection molding, compression molding, there is a casting, as a method to reduce the coating thickness of the semiconductor element upper surface, a resin mold incorporating compression molding mechanism transfer molding apparatus As a method, there is a TCM (transfer compression mold) method. In this method, when transfer molding is performed, a sufficient volume of the cavity is secured to promote filling of the mold resin from the pot to the cavity, and after the resin is filled, the cavity volume is compressed to the desired thickness, and finally. , Mold resin can be pushed back from the cavity to the pot side. As a result, the mold resin can flow into the narrow gap between the semiconductor chip and the bottom of the cavity only by transfer molding, and the coating thickness of the upper surface of the semiconductor element can be reduced (see, for example, Patent Document 1).

Further, in the wire bonding technology, the wire length drawn from the semiconductor element is lengthened, or the wire is thinned to cope with narrow pad pitch and the like.
When molded by the transfer compression molding method, the resin is filled into the cavity from the pot and then returned from the cavity to the pot. Therefore, when a resin composition for encapsulating a semiconductor for transfer molding is used, the resin is heated. Since the resin changes over time in the mold, the viscosity increases, the wire-bonded wiring may be damaged, and the reliability of the package may decrease.

On the other hand, a so-called compression molding method has come to be used as a resin sealing method for electronic elements such as semiconductor elements that can reduce damage to wire-bonded wiring (for example, Patent Documents 2 and 3). reference). In this compression molding method, an object to be sealed (for example, a substrate provided with an electronic element such as a semiconductor element) is held in a mold, and a powdery or granular resin composition is supplied so as to face the object to be sealed. Resin sealing is performed by compressing the material to be sealed and the powdery granular resin composition.

Japanese Unexamined Patent Publication No. 2016-167583 Japanese Unexamined Patent Publication No. 2008-279599 Japanese Unexamined Patent Publication No. 2011-153173

In the compression molding method described in Patent Documents 2 and 3 described above, the molten powdery resin composition flows in a direction substantially parallel to the main surface of the object to be sealed, so that the amount of flow can be reduced and the resin can be reduced. It is possible to reduce the damage of the object to be sealed due to the flow of the wire, especially the damage of the wire bonded wiring. However, in the case of a thin-walled seal on the semiconductor element, uneven sprinkling of the powdery and granular resin element may cause a flat material of the inorganic filler, which may cause chip transparency or poor appearance.

The present invention has been made in view of such circumstances, and when molded by the transfer compression molding method, it has excellent fluidity, less stain on the mold, can reduce deformation of the wire at the time of sealing, and is narrow. Deformation or narrow part of the wire sealed using the transfer compression mold method semiconductor encapsulation resin composition and the transfer compression mold method semiconductor encapsulation resin composition having good filling property into the portion. It is an object of the present invention to provide a semiconductor device having high reliability without any unfilled portion.

As a result of diligent studies to solve the above-mentioned problems, the present inventors have found that the following inventions can solve the problems.

That is, the disclosure of the present application relates to the following.
[1] A resin for encapsulating a semiconductor for a transfer compression molding method, which comprises (A) an epoxy resin, (B) a phenol resin curing agent, (C) a curing accelerator, and (D) a spherical inorganic filler. Composition.
[2] The average particle size of the (D) spherical inorganic filler is 3 to 25 μm, and the content of the (D) spherical inorganic filler is 70 to 90% by mass with respect to the total amount of the resin composition. The resin composition for encapsulating a semiconductor for the transfer compression molding method according to the above [1].
[3] The transfer according to the above [1] or [2], wherein the amount of the spherical inorganic filler having a maximum particle diameter of 32 μm or more contained in the total amount of the (D) spherical inorganic filler is less than 20% by mass. Resin composition for semiconductor encapsulation for compression molding method.
[4] Further, according to any one of the above [1] to [3], the release agent (E) contains one or more polyethylene-based release agents having an acid anhydride skeleton. Resin composition for semiconductor encapsulation for transfer compression molding method.
[5] The resin composition for encapsulating a conductor for a transfer compression mold molding method is characterized in that the melt viscosity at 175 ° C. is 10 Pa · s or less, and the thickening rate of the melt viscosity at 180 ° C. is 5% or less. The resin composition for encapsulating a semiconductor for the transfer compression molding method according to any one of the above [1] to [4].
[6] A semiconductor device comprising sealing a semiconductor element using the resin composition for encapsulating a semiconductor for the transfer compression molding method according to any one of the above [1] to [5].
[7] The semiconductor device according to the above [6], wherein the thickness of the encapsulant on the semiconductor element of the semiconductor device is 40 to 100 μm.

According to the present invention, when molded by the transfer compression mold method, the transfer compression mold has excellent fluidity, less stain on the mold, can reduce deformation of the wire at the time of sealing, and has good filling property in a narrow portion. High reliability with no wire deformation or unfilled portions in narrow portions sealed using the legal semiconductor encapsulation resin composition and the transfer compression mold method semiconductor encapsulation resin composition. A semiconductor device provided can be provided.

Hereinafter, the present invention will be described in detail.
[Resin composition for semiconductor encapsulation for transfer compression molding method]
The resin composition for semiconductor encapsulation for the transfer compression molding method of the present invention (hereinafter, also simply referred to as a resin composition for semiconductor encapsulation) is (A) epoxy resin, (B) phenol resin curing agent, and (C) curing acceleration. It is characterized by containing an agent and (D) a spherical inorganic filler.

[(A) Epoxy resin]
The epoxy resin of the component (A) used in the present invention is generally used as a sealing material for electronic components without being limited by the molecular structure, molecular weight, etc., as long as it has two or more epoxy groups in one molecule. What is used can be widely used. Of these, an epoxy resin having a biphenyl skeleton, that is, a biphenyl type epoxy resin is preferable.
The biphenyl skeleton in the present invention also includes a biphenyl ring in which at least one aromatic ring is hydrogenated.

Specific examples of the biphenyl type epoxy resin include, for example, 4,4'-bis (2,3-epoxypropoxy) biphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3', 5, Epoxy resin obtained by reacting 5'-tetramethylbiphenyl, epichlorohydrin with a biphenol compound such as 4,4'-biphenol or 4,4'-(3,3', 5,5'-tetramethyl) biphenol, etc. Can be mentioned. Among them, 4,4'-bis (2,3-epoxypropoxy) -3,3', 5,5'-tetramethylbiphenyl, 4,4'-dihydroxy-3,3', 5,5'-tetramethyl Biphenyl glycidyl ethers are preferred.

Examples of commercially available biphenyl type epoxy resins are, for example, YX-4000 (epoxy equivalent 185) manufactured by Mitsubishi Chemical Corporation, YX-4000H (epoxy equivalent 193) manufactured by Mitsubishi Chemical Corporation, and NC-3000 manufactured by Nippon Kayaku Co., Ltd. (Epoxy equivalent 273), NC-3000H (epoxy equivalent 288) (all of which are trade names) and the like can be mentioned.
By using the biphenyl type epoxy resin, the melt viscosity can be maintained in the optimum range even if a spherical inorganic filler having an average particle diameter of 3 to 25 μm is blended as the component (D) described later, and the resin has excellent fluidity. The composition can be obtained.
The epoxy resin of the component (A) may be used alone or in combination of two or more.

[(B) Phenolic resin curing agent]
The phenolic resin curing agent of the component (B) used in the present invention has two or more phenolic hydroxyl groups per molecule and can cure the epoxy resin of the component (A) above, and has electrons. Any material that is generally used as a sealing material for parts can be used without particular limitation.

Specific examples of the phenol resin curing agent of the component (B) include phenol novolac resin, phenolxylene resin, cresolnovolac resin, aralkyl type phenol resin, naphthalene type phenol resin, cyclopentadiene type phenol resin, and triphenol alkane type phenol. Examples thereof include resins and triphenylmethane-type phenolic resins. Of these, from the viewpoint of fluidity, phenol novolac resin, phenol xylene resin, and triphenylmethane type phenol resin are preferable. These may be used alone or in combination of two or more.

The phenolic resin curing agent as the component (B) preferably has an ICI viscosity of 0.05 to 5.0 Pa at 150 ° C. from the viewpoint of fluidity.

The compounding ratio of the epoxy resin of the component (A) and the phenol resin curing agent of the component (B) in the resin composition for encapsulating the semiconductor for the transfer compression molding method of the present invention is the epoxy group in the epoxy resin of the component (A). The number of phenolic hydroxyl groups in the phenolic resin curing agent of the component (B) is preferably 0.5 to 1.6, more preferably 0.6 to 1.4, with respect to one. NS. If the number of phenolic hydroxyl groups in the (B) phenol resin curing agent is 0.5 or more with respect to one epoxy group in the (A) epoxy resin, the glass transition temperature of the cured product is good, and 1.6. If it is as follows, the reactivity is good, the crosslink density is sufficient, and a cured product having high strength can be obtained.

Further, the total content of the epoxy resin of the component (A) and the phenol resin curing agent of the component (B) in the resin composition for encapsulating the semiconductor for the transfer compression molding method is preferably 3 to 15% by mass, more preferably. It is 5 to 12% by mass.

[(C) Curing accelerator]
The curing accelerator of the component (C) used in the present invention promotes the reaction between the epoxy resin of the component (A) and the phenol resin curing agent of the component (B), and may have such an action. It can be used without any particular restrictions.

Specific examples of the curing accelerator for the component (C) include 2-heptadecylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, and 4-methylimidazole. , 4-Ethylimidazole, 2-phenyl-4-hydroxymethylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2- Phenyl-4,5-dihydroxymethylimidazole, 2-undecylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl -4-Methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 2,4-diamino-6- [2' -Methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino- 6- [2'-ethyl-4'-methylimidazolyl- (1')]-ethyl-s-triazine, 2-phenylimidazole isocyanuric acid adduct, 2-methylimidazole isocyanuric acid adduct, 2-phenylimidazoline, etc. Imidazoles; 1,8-diazabicyclo [5,4,0] undecene-7 (DBU), 1,5-diazabicyclo [4,3,0] nonen, 5,6-dibutylamino-1,8-diazabicyclo [5] , 4,0] Diazabicyclo compounds such as Undecene-7 and salts thereof; triethylamine, triethylenediamine, benzyldimethylamine, α-methylbenzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol and the like. Tertiary amines; trimethylphosphine, triethylphosphine, tributylphosphine, diphenylphosphine, triphenylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, methyldiphenylphosphine, dibutylphenylphosphine, tricyclohexylphosphine, bis (Diphenylphosphino) methane, 1,2-bis (diphenylho) Sphino) Organic phosphine compounds such as ethane; tetra- or triphenylborone salts such as tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, triphenylphosphine triphenylborane and the like can be mentioned. Among them, imidazoles are preferable from the viewpoint of good fluidity and moldability. These may be used alone or in combination of two or more. Above all, a curing catalyst having potential is preferable from the viewpoint of wire flow.

When the transfer compression molding method is used, the resin moves from the inside of the pot to the cavity, and then by compression, when the resin once moved into the cavity moves into the pot again, a wire flow may occur if the viscosity increases rapidly. There is sex. From the viewpoint of the balance between fluidity and curability, the curing start temperature is preferably 90 to 160 ° C, more preferably 110 to 140 ° C. When the temperature is 90 ° C. or higher, rapid thickening can be suppressed, and when the temperature is 160 ° C. or lower, the mold is not contaminated and the moldability is improved.

The amount of the curing accelerator of the component (C) is usually 3 to 10 parts by mass, preferably 4 with respect to 100 parts by mass of the total amount of the epoxy resin of the component (A) and the phenol resin curing agent of the component (B). It is selected in the range of ~ 9 parts by mass, more preferably 5 to 8 parts by mass. When the blending amount is 3 parts by mass or more, the curability is improved, and when the blending amount is 10 parts by mass or less, the fluidity and molding of the resin composition are improved with respect to 100 parts by mass of the total amount of the components (A) and (B). It is possible to suppress deterioration of sex and the like.

[(D) Spherical inorganic filler]
The spherical inorganic filler of the component (D) used in the present invention has an average particle size of preferably 3 to 25 μm, more preferably 3 to 15 μm, and even more preferably 3 to 12 μm. When the average particle size is 3 μm or more, the increase in viscosity can be suppressed and the wire flow can be suppressed, and when the average particle size is 25 μm or less, the filling property into a narrow portion is good. Further, the content of the spherical inorganic filler having a maximum particle diameter of 32 μm or more contained in the total amount of the spherical inorganic filler of the component (D) is preferably less than 20% by mass, more preferably less than 5% by mass. It is preferably less than 3% by mass, still more preferably less than 1% by mass. If it is less than 20% by mass, the filling property of the narrow portion is good. From such a viewpoint, it is more preferable that the component (D) does not contain a spherical inorganic filler having a maximum particle size of 32 μm or more.
Further, the spherical inorganic filler of the component (D) preferably has two maximum values when the frequency of the particle size is taken. By having two maximum values, two types of particles, large and small, exhibit a bearing effect, and the fluidity becomes even better.
In addition, in this specification, the "bearing effect" means that particles having a small particle size are inserted between particles having a large particle size, so that the particles having a large particle size can move more freely, and the resin composition as a whole can be used as a whole. It improves liquidity.

Examples of the spherical inorganic filler of the component (D) include silicas such as fused silica and crystalline silica, and spherical materials made of alumina, silicon nitride, aluminum nitride, boron nitride, titanium oxide, glass fiber and the like. .. Of these, silica and alumina are preferable from the viewpoints of fluidity, dimensional stability, and reduction of unfilled chips. Further, titanium oxide and barium titanate are preferable from the viewpoint of high dielectric properties for fingerprint sensors.

In the present specification, "spherical" means that the ratio (b / a) of the major axis (a) and the minor axis (b) of the particles is 0.8 to 1.0, and is a true sphere. It does not have to be.
Further, in the present specification, the “particle size” refers to a volume-based particle size obtained by particle size distribution measurement based on a laser diffraction / light scattering method, unless otherwise specified. In the present specification, the "average particle size" is a particle size corresponding to a cumulative frequency of 50% by volume from the fine particle side having a small particle size in a volume-based particle size distribution based on the laser diffraction / light scattering method, unless otherwise specified. (D50, also referred to as median diameter).

The particle size distribution of the spherical inorganic filler of the component (D) can be obtained by a laser diffraction / scattering method. For example, the laser diffraction / scattering type particle size distribution measuring device LA-920 (product name) manufactured by HORIBA, Ltd. Can be obtained by.

Further, by classifying the spherical inorganic filler of the component (D), it is possible to remove the mixed spherical inorganic filler having a large size in advance. When the average particle size of the spherical inorganic filler is 3 to 15 μm, for example, by classifying with a particle size of 32 μm, silica having a large size can be removed in advance. As a result, the filling property to the narrow portion is improved.

The blending amount of the spherical inorganic filler as the component (D) is preferably 70% by mass or more and 90% by mass or less, and more preferably 80% by mass or more and 90% by mass or less with respect to the total amount of the resin composition. When the content is 70% by mass or more, a sufficient effect of suppressing molding shrinkage can be obtained, an increase in the coefficient of linear expansion is suppressed, and dimensional accuracy, moisture resistance, mechanical strength, etc. of the molded product can be improved. Further, by setting the content to 90% by mass or less, an increase in melt viscosity can be suppressed, and fluidity and moldability can be improved.

[(E) Release agent]
By further containing the mold release agent of the component (E), the resin composition for semiconductor encapsulation of the present invention can suppress mold stains and the like, and can improve moldability. Specific examples of the component (E) include carnauba wax, montanic acid wax, polyethylene wax, polypropylene wax and the like. Among them, a polyethylene-based mold release agent having an acid anhydride skeleton structure is preferable, and it is preferable to contain at least one polyethylene-based mold release agent having an acid anhydride skeleton structure as the component (E). The polyethylene-based mold release agent having an acid anhydride skeleton structure has good dispersibility and wax floating, and can improve the moldability of the resin composition for semiconductor encapsulation.
Further, as described above, when the average particle size of the spherical inorganic filler of the component (D) is 3 to 25 μm, the mold stain and the like can be suppressed, the effect of improving the moldability is improved, and the average particle size is further increased to 3. The effect becomes remarkable when it is set to ~ 15 μm.

The blending amount of the release agent of the component (E) is preferably 0.05 to 2.0% by mass, more preferably 0.1 to 1.5% by mass, and further preferably 0. It is 1 to 0.5% by mass. When it is 0.05% by mass or more, the releasability is good, and when it is 2.0% by mass or less, there is no flow mark or the like and the appearance is also good.

Further, in addition to the above-mentioned components, the resin composition for semiconductor encapsulation of the present invention contains a coupling agent and a filler which are generally blended in this type of composition as long as the effects of the present invention are not impaired. Additives such as barium titanate), colorants (carbon black, cobalt blue, etc.), modifiers (silicone oil, silicone rubber, etc.), hydrotalcites, ion scavengers, low stress agents, etc., as needed. Can be blended. One of these additives may be used alone, or two or more thereof may be mixed and used.

As the coupling agent, an epoxysilane-based, aminosilane-based, ureidosilane-based, vinylsilane-based, alkylsilane-based, organic titanate-based, aluminum alcoholate-based, or other coupling agent is used. From the viewpoint of flame retardancy and curability, aminosilane-based coupling agents are particularly preferable, and for example, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropylmethyldimethoxysilane, 3-. Aminopropylmethyldiethoxysilane, phenylaminopropyltrimethoxysilane, etc. are used.

The blending amount of the additive is preferably about 0.01 to 3% by mass, more preferably about 0.05 to 1% by mass, respectively, in the resin composition for semiconductor encapsulation.

The content of the component (A), the component (B), the component (C), and the component (D) in the resin composition for encapsulating a semiconductor of the present invention is preferably 80% by mass or more, more preferably 90% by mass. Above, more preferably 95% by mass or more.

In the resin composition for semiconductor encapsulation of the present invention, the above-mentioned components (A) to (D), the component (E) to be blended as necessary, and various additives such as a coupling agent are premixed by a mixer or the like. After that, it can be prepared by kneading with a disperser, a kneader, a three-roll mill or the like, then cooling and solidifying, and pulverizing to an appropriate size.

The above crushing method is not particularly limited, and a general crusher can be used. For example, a cutting mill (cutter mill), a speed mill, a ball mill, a cyclone mill, a hammer mill, a vibration mill, a grinder mill and the like are preferably used, and a speed mill is more preferably used.

[Physical characteristics of resin composition for semiconductor encapsulation for transfer compression molding method]
The melt viscosity of the resin composition for encapsulating a semiconductor for the transfer compression molding method of the present invention at 175 ° C. is preferably 10 Pa · s or less, more preferably 8 Pa · s or less. Further, the thickening rate of the melt viscosity at 180 ° C. is preferably 5 times or less, more preferably 4 times or less.
The gel time of the semiconductor encapsulating resin composition is preferably 40 to 80 seconds, more preferably 45 to 70 seconds, and even more preferably 50 to 70 seconds.
Specifically, the measurement of each of the above physical property values can be performed by the method described in the examples.

[Semiconductor device]
The semiconductor device of the present invention includes a substrate and a semiconductor element fixed on the substrate to form a circuit by bonding wires, and the semiconductor element and the bonding wire are sealed by using the above-mentioned semiconductor encapsulating resin composition. It has stopped.

The resin composition for semiconductor encapsulation for the transfer compression molding method of the present invention is assumed to be molded by the transfer compression molding method, but as a known encapsulation method for encapsulating with the semiconductor encapsulation resin composition, compression is used. Sealing by molding, low-pressure transfer molding, injection molding, casting molding, etc. is also possible.

The semiconductor device of the present invention can be manufactured as follows by using the resin composition for encapsulating a semiconductor for the transfer compression molding method of the present invention.
First, the semiconductor encapsulating resin composition is transferred and molded by a transfer compression molding machine under the conditions that the temperature in the molding die is 150 to 190 ° C., the molding pressure is 4 to 12 MPa, and the injection time is 6 to 20 seconds. The semiconductor device of the present invention can be obtained by performing compression molding by lowering the upper mold in 1 to 10 seconds.

The type of semiconductor component sealed by the semiconductor encapsulating resin composition of the present invention is not particularly limited, but the coating thickness of the encapsulant on the upper surface of the element of the semiconductor device after resin encapsulation is not particularly limited. A fingerprint sensor application package having a size of 40 to 100 μm and a memory application package are preferable.

As described above, by molding using the resin composition for encapsulating the semiconductor for the transfer compression molding method of the present invention, there is no deformation of the wire or an unfilled portion in a narrow portion, and a semiconductor device having high reliability can be obtained. Obtainable.

Next, the present invention will be specifically described with reference to Examples, but the present invention is not limited to these examples. In addition, "part" means "mass part" unless otherwise specified.

(Example 1)
4.00 parts of epoxy resin (a-1) as a component (A), 1.80 parts of epoxy resin (a-2); 5.00 parts of phenolic curing agent (b-1) as a component (B); ) 0.70 parts of curing accelerator (c-1) as a component; 86.0 parts of molten spherical silica (d-1) as a component (D); 0. 10 parts, mold release agent (e-2) 0.10 parts, mold release agent (e-3) 0.04 parts; as additives 0.7 parts of low stress agent, coupling agent 0.30 parts, erasing 0.10 part of the foaming agent and 0.30 part of the colorant were mixed at room temperature (20 ° C.), and then heated and kneaded at 120 ° C. using a mixing biaxial roll to obtain a resin composition for semiconductor encapsulation.

(Examples 2 to 5, 7 to 9, Reference Example 1, and Comparative Examples 1 to 7)
A resin composition for semiconductor encapsulation was obtained in the same manner as in Example 1 except that the components were changed to the types and blending amounts shown in Tables 1 and 2. In Tables 1 and 2, blanks indicate no compounding.

The details of each component shown in Tables 1 and 2 used for preparing the resin composition for semiconductor encapsulation are as follows.

<Epoxy resin>
[(A) component]
-YX-4000H: Biphenyl type epoxy resin, epoxy equivalent 193, manufactured by Mitsubishi Chemical Corporation, product name-NC-3000: biphenyl type epoxy resin, epoxy equivalent 276, manufactured by Nippon Kayaku Co., Ltd., product name

<Phenol resin curing agent>
[(B) component]
-MEHC-7800SS: Phenolxylene resin, hydroxyl group equivalent 170, softening point 65 ° C, ICI viscosity 1.0Pa, manufactured by Meiwa Kasei Co., Ltd., trade name-BRG-558: phenol novolac resin, hydroxyl group equivalent 104, softening point 95 ° C. , ICI viscosity 11Pa, manufactured by Showa Polymer Co., Ltd., trade name

<Hardening accelerator>
[(C) component]
TIC-188: TEP-2P4MHZ, (reaction start temperature with bisphenol A type epoxy resin: 130 ° C.), manufactured by Nippon Soda Co., Ltd., trade name,
DICY7: dicyandiamide, (reaction start temperature with bisphenol A type epoxy resin: 160 ° C.), manufactured by Mitsubishi Chemical Corporation, trade name ・ 2E4MZ: 2-ethyl-4-methylimidazole, with (bisphenol A type epoxy resin) Reaction start temperature: 90 ° C), manufactured by Shikoku Kasei Co., Ltd., trade name

<Spherical inorganic filler>
[(D) component]
FC920G-SQ: Fused spherical silica, manufactured by Admatex Co., Ltd., trade name, average particle diameter 5 μm, 20 μm cut, content of particle diameter 32 μm or more is 0.1% by mass or less ・ AM10-025R: Fused spherical alumina, Made by Nippon Steel & Sumitomo Metal Materials Co., Ltd., trade name, average particle diameter 10 μm, 25 μm cut, content of particle diameter 32 μm or more is 0.1% by mass or less ・ FB-875FC: molten spherical silica, manufactured by Denka Co., Ltd. , Trade name, average particle diameter 23 μm, 55 μm cut, content of particle diameter 32 μm or more is 20% by mass
The content of FB-875FC having a particle diameter of 32 μm or more is a value measured by a laser diffraction / scattering type particle size distribution measuring device LA-920 (product name) manufactured by HORIBA, Ltd.

<Crushed inorganic filler>
F205: crushed silica, manufactured by Nitto Boseki Materials Co., Ltd., trade name, average particle size 5.5 μm, content of particle size 32 μm or more is 4.5% by mass.

<Release agent>
[(E) component]
・ Carnauba: Natural carnauba wax, manufactured by Toyo Petrolite Co., Ltd. ・ Diacarna 30M: Polyethylene mold release agent having an acid anhydride skeleton structure, manufactured by Mitsubishi Chemical Corporation ・ HW1105A: Polyethylene type having an acid anhydride skeleton structure Release agent, manufactured by Mitsui Kagaku Co., Ltd. ・ TPNC-133: Montaic acid ester wax, manufactured by Clariant Japan Co., Ltd. ・ HW-4252E: Oxide of low molecular weight polyethylene / propylene copolymer (containing acid anhydride skeleton structure) No polyethylene mold release agent), manufactured by Mitsui Kagaku Co., Ltd.

<Additives>
[Low stress agent]
-Knit resin Kumaron V-120: Kumaron-Inden copolymer resin, manufactured by Nikko Kagaku Co., Ltd. [Silane coupling agent]
-Z-6883: Phenylaminopropyltrimethoxysilane, manufactured by Toray Dow Corning Co., Ltd. [Antifoaming agent]
-SF-8421: Epoxy / polyether-modified silicone oil, manufactured by Toray Dow Corning Silicone Co., Ltd. [Coloring agent]
・ MA-100RMJ: Carbon black, manufactured by Mitsubishi Chemical Corporation

For the inorganic filler used in the examples and comparative examples, the median diameter was determined by the laser diffraction / scattering method using the laser diffraction / scattering type particle size distribution measuring device LA-920 (product name) manufactured by HORIBA, Ltd. It was measured and used as the average particle size.

Various characteristics of the semiconductor encapsulating resin compositions obtained in the above Examples and Comparative Examples were evaluated by the methods shown below.
[Molding method]
-Transfer molding method: mold temperature 175 ° C., injection pressure 9.8 MPa, curing time 120 seconds-Transfer compression mold (TCM) method: mold temperature 175 ° C., injection pressure 6 MPa, injection time 20 seconds After transfer molding Compression molding / compression molding with molding pressure of 6 MPa and curing time of 120 seconds: Molding pressure of 6 MPa and curing time of 120 seconds at a mold temperature of 175 ° C.

<Resin composition for semiconductor encapsulation>
(1) Spiral Flow A resin composition for encapsulating a semiconductor was transferred and molded under the conditions of a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 120 seconds, and the flow distance (cm) of the resin composition was measured. In addition, 150 cm or more is considered as a pass.

(2) Gel time On a hot plate at 175 ° C., the time (seconds) from gelation of the semiconductor encapsulating resin composition to curing was measured.

(3) Melt viscosity (minimum melt viscosity, thickening rate)
The melt viscosity (Pa · s) was measured at temperatures of 175 ° C. and 180 ° C. using a rheometer HAAKE MARSIII (manufactured by Thermo Fisher Scientific Co., Ltd.). The thickening rate of the melt viscosity was calculated from the minimum melt viscosity (Pa · s) at 180 ° C. and the viscosity (Pa · s) 30 seconds after the start of measurement by the following formula.
Increase rate of melt viscosity (double) = [(viscosity after 30 seconds-minimum melt viscosity) / minimum melt viscosity]

(4) Narrow Space Fillability The resin composition for encapsulating a semiconductor is transfer-molded into a mold having a slit depth of 40 μm under the conditions of a mold temperature of 175 ° C., an injection pressure of 4 MPa, and a curing time of 120 seconds, and the resin composition flows. The distance (mm) was measured.

(5) Moldability (continuous moldability)
Using the resin composition for semiconductor encapsulation, the FBGA package (50 mm × 50 mm × 0.5 mm, coating thickness of the encapsulant on the upper surface of the semiconductor element 70 μm or 200 μm) is subjected to the conditions according to the molding methods shown in Tables 1 and 2. 200 shots of continuous molding were performed in. The evaluation was based on the following criteria.
⊚: Continuous molding up to 200 shots was possible ○: Continuous molding up to 150 shots was possible, but continuous molding up to 200 shots was not possible ×: Continuous molding up to 150 shots was not possible there were

(6) Moldability (confirmation of package appearance)
Using the resin composition for semiconductor encapsulation, the FBGA package (50 mm × 50 mm × 0.5 mm, coating thickness of the encapsulant on the upper surface of the semiconductor element 70 μm or 200 μm) is subjected to the conditions according to the molding methods shown in Tables 1 and 2. 200 shots of continuous molding were performed in. The evaluation was based on the following criteria.
⊚: No appearance abnormality was observed. ○: Appearance abnormality such as flow mark was observed, but appearance abnormality such as surface void was not observed. ×: Appearance abnormality such as flow mark and surface void was remarkable.

(7) Wire flowability Using the resin composition for encapsulating a semiconductor, the FBGA package (50 mm × 50 mm × 0.54 mm, chip thickness 0.44 mm, on the chip, under the conditions according to the molding methods shown in Tables 1 and 2). After molding (the coating thickness of the encapsulant is 100 μm, the wire diameter is 0.25 μm, and the wire length is 4.5 mm), the deformation of the wire is observed with an X-ray inspection device (SMX-1000, manufactured by Shimadzu Corporation). The wire flow rate of the maximum deformation part was measured. A wire flow rate of less than 10% is regarded as acceptable.

<Semiconductor package>
(8) Reflow resistance The FBGA package produced in (5) above is subjected to moisture absorption treatment at 30 ° C., relative humidity of 60%, and 192 hours, and then IR reflow treatment (maximum ultimate temperature 260 ° C.) is performed to package the package. The presence or absence of internal cracks (peeling) was observed with an ultrasonic flaw detector (SAT), and the occurrence rate (number of defects (pieces) / total number (pieces)) was examined (n = 20).

From the above, the resin composition for semiconductor encapsulation for the transfer compression molding method of the present invention can have an appropriate range of fluidity and gel time, and therefore has no problem in wire flow and narrow portion filling property and is highly reliable. It turned out to be a thing.

Claims (5)

It contains (A) epoxy resin, (B) phenolic resin curing agent, (C) curing accelerator, and (D) spherical inorganic filler .
The amount of the spherical inorganic filler having a maximum particle diameter of 32 μm or more contained in the total amount of the (D) spherical inorganic filler is less than 20% by mass.
For the transfer compression molding method, wherein the melt viscosity at 175 ° C. is 10 Pa · s or less, the thickening rate of the melt viscosity at 180 ° C. is 5 times or less, and the gel time at 175 ° C. is 40 to 80 seconds. Resin composition for semiconductor encapsulation. The average particle size of the (D) spherical inorganic filler is 3 to 25 μm, and the content of the (D) spherical inorganic filler is 70 to 90% by mass with respect to the total amount of the resin composition. The resin composition for encapsulating a semiconductor for the transfer compression molding method according to claim 1. (E) The transfer compression molding method semiconductor encapsulation according to claim 1 or 2 , wherein the release agent contains at least one polyethylene-based release agent having an acid anhydride skeleton. Resin composition. A semiconductor device comprising sealing a semiconductor element using the resin composition for encapsulating a semiconductor for a transfer compression molding method according to any one of claims 1 to 3. The semiconductor device according to claim 4 , wherein the thickness of the encapsulant on the semiconductor element of the semiconductor device is 40 to 100 μm.