JP6909776B2 - 結晶格子内の空孔を捕捉する方法 - Google Patents

結晶格子内の空孔を捕捉する方法 Download PDF

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JP6909776B2
JP6909776B2 JP2018500316A JP2018500316A JP6909776B2 JP 6909776 B2 JP6909776 B2 JP 6909776B2 JP 2018500316 A JP2018500316 A JP 2018500316A JP 2018500316 A JP2018500316 A JP 2018500316A JP 6909776 B2 JP6909776 B2 JP 6909776B2
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target
crystal lattice
lattice
laser
modifying
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JP2018520085A (ja
JP2018520085A5 (enExample
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マーティン ジェイムズ ブース，
マーティン ジェイムズ ブース，
パトリック ソルター，
パトリック ソルター，
ジェイソン スミス，
ジェイソン スミス，
ユーチェン チェン，
ユーチェン チェン，
Original Assignee
オックスフォード ユニヴァーシティ イノヴェーション リミテッド
オックスフォード ユニヴァーシティ イノヴェーション リミテッド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laser Beam Processing (AREA)
JP2018500316A 2015-07-03 2016-07-01 結晶格子内の空孔を捕捉する方法 Active JP6909776B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1511677.5 2015-07-03
GB1511677.5A GB2540537A (en) 2015-07-03 2015-07-03 Crystal defects
PCT/GB2016/052004 WO2017006092A1 (en) 2015-07-03 2016-07-01 Method for trapping vacancies in a crystal lattice

Publications (3)

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JP2018520085A JP2018520085A (ja) 2018-07-26
JP2018520085A5 JP2018520085A5 (enExample) 2019-03-14
JP6909776B2 true JP6909776B2 (ja) 2021-07-28

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JP2018500316A Active JP6909776B2 (ja) 2015-07-03 2016-07-01 結晶格子内の空孔を捕捉する方法

Country Status (6)

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US (1) US10934635B2 (enExample)
EP (1) EP3317439A1 (enExample)
JP (1) JP6909776B2 (enExample)
KR (1) KR102231517B1 (enExample)
GB (1) GB2540537A (enExample)
WO (1) WO2017006092A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201712639D0 (en) * 2017-08-07 2017-09-20 Univ Oxford Innovation Ltd Method for laser machining inside materials
US11559858B2 (en) 2017-08-22 2023-01-24 Diamtech Ltd. System and method for creation of a predetermined structure from a diamond bulk
US12391553B2 (en) 2017-09-18 2025-08-19 The Trustees Of Princeton University Synthetic engineered diamond materials with spin impurities and methods of making the same
GB201808367D0 (en) * 2018-05-22 2018-07-11 Univ Oxford Innovation Ltd Laser writing of colour centres in crystals
EP3803746B1 (en) 2018-06-02 2024-07-31 Scarselli, Bruno Asset identification, registration, tracking and commercialization apparatuses and methods
CN109384222B (zh) * 2018-09-29 2020-08-07 河南省力量钻石股份有限公司 一种金刚石的提取方法
GB2577928A (en) * 2018-10-11 2020-04-15 Univ Oxford Innovation Ltd Laser method and apparatus for analysing crystals
RU2720100C1 (ru) * 2019-03-26 2020-04-24 Акционерная Компания "АЛРОСА" (публичное акционерное общество) (АК "АЛРОСА" (ПАО)) Способ создания и детектирования оптически проницаемого изображения внутри алмаза и системы для детектирования (варианты)
DE102019205217A1 (de) * 2019-04-11 2020-10-15 Robert Bosch Gmbh Verfahren zum Aufbringen einer Filterschicht auf einen Kristallkörper
IL307512B2 (en) 2021-04-06 2025-01-01 Bruno Scarselli Property Verification System and Methods of Using It
FR3121926B1 (fr) * 2021-04-19 2024-02-09 Thales Sa Procede de fabrication d'un dispositif comprenant un cristal de diamant
GB2620414A (en) * 2022-07-06 2024-01-10 Univ Warwick A device
CN120395114A (zh) * 2025-07-03 2025-08-01 浙江大学杭州国际科创中心 一种基于飞秒激光直写的碳化硅自旋缺陷制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648892A (ja) * 1992-07-30 1994-02-22 Matsushita Electric Ind Co Ltd ダイヤモンドの格子欠陥制御方法
US7284396B2 (en) * 2005-03-01 2007-10-23 International Gemstone Registry Inc. Method and system for laser marking in the volume of gemstones such as diamonds
EP1990313A1 (en) * 2007-05-10 2008-11-12 INSERM (Institut National de la Santé et de la Recherche Médicale) Method to produce light-emitting nano-particles of diamond
US8138756B2 (en) * 2009-04-24 2012-03-20 Hewlett-Packard Development Company, L.P. Microfiber magnetometer
US8455332B2 (en) * 2009-05-01 2013-06-04 Bridgelux, Inc. Method and apparatus for manufacturing LED devices using laser scribing
WO2010149777A1 (en) * 2009-06-26 2010-12-29 Element Six Limited Method for making fancy orange coloured single crystal cvd diamond and product obtained
WO2012100167A2 (en) * 2011-01-21 2012-07-26 President & Fellows Of Harvard College Micro-and nano-fabrication of connected and disconnected metallic structures in three-dimensions using ultrafast laser pulses
GB201121642D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material

Also Published As

Publication number Publication date
KR20180026530A (ko) 2018-03-12
JP2018520085A (ja) 2018-07-26
GB201511677D0 (en) 2015-08-19
WO2017006092A1 (en) 2017-01-12
EP3317439A1 (en) 2018-05-09
US10934635B2 (en) 2021-03-02
GB2540537A (en) 2017-01-25
US20180187333A1 (en) 2018-07-05
KR102231517B1 (ko) 2021-03-24

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