KR102231517B1 - 결정 격자 내의 공격자점을 트랩하는 방법 - Google Patents

결정 격자 내의 공격자점을 트랩하는 방법 Download PDF

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KR102231517B1
KR102231517B1 KR1020187003547A KR20187003547A KR102231517B1 KR 102231517 B1 KR102231517 B1 KR 102231517B1 KR 1020187003547 A KR1020187003547 A KR 1020187003547A KR 20187003547 A KR20187003547 A KR 20187003547A KR 102231517 B1 KR102231517 B1 KR 102231517B1
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target
crystal lattice
laser
attacker
point
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KR20180026530A (ko
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마틴 제임스 부스
패트릭 샐터
제이슨 스미스
유-첸 첸
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옥스포드 유니버시티 이노베이션 리미티드
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H10P14/6542—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laser Beam Processing (AREA)
KR1020187003547A 2015-07-03 2016-07-01 결정 격자 내의 공격자점을 트랩하는 방법 Active KR102231517B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1511677.5A GB2540537A (en) 2015-07-03 2015-07-03 Crystal defects
GB1511677.5 2015-07-03
PCT/GB2016/052004 WO2017006092A1 (en) 2015-07-03 2016-07-01 Method for trapping vacancies in a crystal lattice

Publications (2)

Publication Number Publication Date
KR20180026530A KR20180026530A (ko) 2018-03-12
KR102231517B1 true KR102231517B1 (ko) 2021-03-24

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KR1020187003547A Active KR102231517B1 (ko) 2015-07-03 2016-07-01 결정 격자 내의 공격자점을 트랩하는 방법

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Country Link
US (1) US10934635B2 (enExample)
EP (1) EP3317439A1 (enExample)
JP (1) JP6909776B2 (enExample)
KR (1) KR102231517B1 (enExample)
GB (1) GB2540537A (enExample)
WO (1) WO2017006092A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201712639D0 (en) * 2017-08-07 2017-09-20 Univ Oxford Innovation Ltd Method for laser machining inside materials
WO2019038754A1 (en) 2017-08-22 2019-02-28 Diamtech Ltd. SYSTEM AND METHOD FOR CREATING A PREDEFINED STRUCTURE FROM A DIAMOND MASS
WO2019055975A2 (en) * 2017-09-18 2019-03-21 The Trustees Of Princeton University MODIFIED SYNTHETIC DIAMOND MATERIALS HAVING SPIN IMPURITIES AND METHODS OF MAKING SAME
GB201808367D0 (en) * 2018-05-22 2018-07-11 Univ Oxford Innovation Ltd Laser writing of colour centres in crystals
EP3803746B1 (en) 2018-06-02 2024-07-31 Scarselli, Bruno Asset identification, registration, tracking and commercialization apparatuses and methods
CN109384222B (zh) * 2018-09-29 2020-08-07 河南省力量钻石股份有限公司 一种金刚石的提取方法
GB2577928A (en) 2018-10-11 2020-04-15 Univ Oxford Innovation Ltd Laser method and apparatus for analysing crystals
RU2720100C1 (ru) * 2019-03-26 2020-04-24 Акционерная Компания "АЛРОСА" (публичное акционерное общество) (АК "АЛРОСА" (ПАО)) Способ создания и детектирования оптически проницаемого изображения внутри алмаза и системы для детектирования (варианты)
DE102019205217A1 (de) * 2019-04-11 2020-10-15 Robert Bosch Gmbh Verfahren zum Aufbringen einer Filterschicht auf einen Kristallkörper
IL307512B2 (en) 2021-04-06 2025-01-01 Bruno Scarselli Property Verification System and Methods of Using It
FR3121926B1 (fr) * 2021-04-19 2024-02-09 Thales Sa Procede de fabrication d'un dispositif comprenant un cristal de diamant
GB2620414A (en) * 2022-07-06 2024-01-10 Univ Warwick A device
CN120395114A (zh) * 2025-07-03 2025-08-01 浙江大学杭州国际科创中心 一种基于飞秒激光直写的碳化硅自旋缺陷制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010149775A1 (en) 2009-06-26 2010-12-29 Element Six Limited Method for treating single crystal cvd diamond and product obtained

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Publication number Priority date Publication date Assignee Title
JPH0648892A (ja) * 1992-07-30 1994-02-22 Matsushita Electric Ind Co Ltd ダイヤモンドの格子欠陥制御方法
US7284396B2 (en) * 2005-03-01 2007-10-23 International Gemstone Registry Inc. Method and system for laser marking in the volume of gemstones such as diamonds
EP1990313A1 (en) * 2007-05-10 2008-11-12 INSERM (Institut National de la Santé et de la Recherche Médicale) Method to produce light-emitting nano-particles of diamond
US8138756B2 (en) * 2009-04-24 2012-03-20 Hewlett-Packard Development Company, L.P. Microfiber magnetometer
US8455332B2 (en) * 2009-05-01 2013-06-04 Bridgelux, Inc. Method and apparatus for manufacturing LED devices using laser scribing
US20140170333A1 (en) * 2011-01-21 2014-06-19 President & Fellows Of Harvard College Micro-and nano-fabrication of connected and disconnected metallic structures in three-dimensions using ultrafast laser pulses
GB201121642D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010149775A1 (en) 2009-06-26 2010-12-29 Element Six Limited Method for treating single crystal cvd diamond and product obtained
JP2012530674A (ja) 2009-06-26 2012-12-06 エレメント シックス リミテッド 単結晶ｃｖｄダイヤモンドの処理方法及び得られた製品
JP2014166956A (ja) 2009-06-26 2014-09-11 Element Six Ltd 単結晶ｃｖｄダイヤモンドの処理方法及び得られた製品

Also Published As

Publication number Publication date
WO2017006092A1 (en) 2017-01-12
KR20180026530A (ko) 2018-03-12
EP3317439A1 (en) 2018-05-09
US20180187333A1 (en) 2018-07-05
JP6909776B2 (ja) 2021-07-28
GB201511677D0 (en) 2015-08-19
JP2018520085A (ja) 2018-07-26
US10934635B2 (en) 2021-03-02
GB2540537A (en) 2017-01-25

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