JP6898526B2 - 静電チャック用の給電装置及び基板管理方法 - Google Patents
静電チャック用の給電装置及び基板管理方法 Download PDFInfo
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/30—Monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (3)
- 真空チャンバ内で被処理基板を吸着保持する静電チャックに給電する静電チャック用の給電装置において、
静電チャックに設けられる電極に直流電圧を印加する直流電源部と、静電チャックの静電容量を通る交流電流を流す交流電源部とを備え、
静電チャックにて被処理基板を吸着保持するために直流電源部から電極にチャック電圧を印加する回路を第1回路、被処理基板を除電するための回路を第2回路として、第1回路と第2回路とを切り換える切換手段を更に備え、第2回路に、交流電源部と、交流電流または交流電圧を測定する測定器とが設けられることを特徴とする静電チャック用の給電装置。 - 請求項1記載の静電チャック用の給電装置であって、前記電極が一対の電極で構成されるものにおいて、
前記直流電源部の正負の出力が前記切換手段を介して各電極に夫々接続され、前記第2回路に2個の前記交流電源部が直列に設けられ、両交流電源部の間に抵抗が直列に設けられて抵抗に並列に前記測定器としての電圧計が接続されることを特徴とする請求項1記載の静電チャック用の給電装置。 - 請求項1または請求項2記載の静電チャック用の給電装置を用い、静電チャックに対する被処理基板の吸着、解除を管理する基板管理方法において、
切換手段により第2回路に切り換えた状態で静電チャック表面に被処理基板を設置し、交流電源部により静電チャックの静電容量を通る交流電流を流し、このときの交流電流または交流電圧を測定器で測定し、この測定値が所定範囲内のとき、電極に対する直流電圧の印加を許可する工程と、
切換手段により第1回路に切り換え、直流電源部から電極にチャック電圧を印加して静電チャック表面に設置された被処理基板を吸着保持し、吸着後に、交流電源部により静電チャックの静電容量を通る交流電流を流し、このときの交流電流または交流電圧を測定器で測定し、この測定値が所定範囲内にあるか否かを判定する工程と、
切換手段により第2回路に切り換え、被処理基板を除電すると共に、交流電源部により静電チャックの静電容量を通る交流電流を流し、このときの交流電流または交流電圧を測定器で測定し、この測定値が所定範囲内のとき、静電チャックからの被処理基板の離脱を許可する工程とを含むことを特徴とする基板管理方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2018123735 | 2018-06-28 | ||
JP2018123735 | 2018-06-28 | ||
PCT/JP2019/018354 WO2020003746A1 (ja) | 2018-06-28 | 2019-05-08 | 静電チャック用の給電装置及び基板管理方法 |
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JPWO2020003746A1 JPWO2020003746A1 (ja) | 2021-03-11 |
JP6898526B2 true JP6898526B2 (ja) | 2021-07-07 |
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JP2020527247A Active JP6898526B2 (ja) | 2018-06-28 | 2019-05-08 | 静電チャック用の給電装置及び基板管理方法 |
Country Status (5)
Country | Link |
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US (1) | US11257702B2 (ja) |
JP (1) | JP6898526B2 (ja) |
CN (1) | CN112335031B (ja) |
SG (1) | SG11202007783XA (ja) |
WO (1) | WO2020003746A1 (ja) |
Families Citing this family (1)
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US20220334160A1 (en) * | 2021-03-17 | 2022-10-20 | Advanced Energy Industries, Inc. | Capacitance sensing systems and methods |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2695436B2 (ja) * | 1988-06-24 | 1997-12-24 | 富士通株式会社 | 静電チャックの劣化検出回路 |
US5325261A (en) | 1991-05-17 | 1994-06-28 | Unisearch Limited | Electrostatic chuck with improved release |
JP2965176B2 (ja) * | 1991-07-26 | 1999-10-18 | 日本電信電話株式会社 | 静電チャックの過渡特性評価方法 |
JP3847363B2 (ja) * | 1996-02-02 | 2006-11-22 | 富士通株式会社 | 半導体ウェハ処理装置及び半導体ウェハ処理方法 |
JPH1167885A (ja) * | 1997-08-25 | 1999-03-09 | Nissin Electric Co Ltd | 基板保持装置 |
JP2002203837A (ja) * | 2000-12-28 | 2002-07-19 | Mitsubishi Electric Corp | プラズマ処理方法および装置並びに半導体装置の製造方法 |
KR101394337B1 (ko) * | 2006-08-30 | 2014-05-13 | 엘아이지에이디피 주식회사 | 정전척 |
KR20090088753A (ko) * | 2008-02-15 | 2009-08-20 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치 및 플라즈마 처리방법 |
US7558045B1 (en) * | 2008-03-20 | 2009-07-07 | Novellus Systems, Inc. | Electrostatic chuck assembly with capacitive sense feature, and related operating method |
RU2011118201A (ru) * | 2008-10-07 | 2012-11-20 | Улвак, Инк. (Jp) | Способ управления подложкой |
JP5367482B2 (ja) * | 2009-07-10 | 2013-12-11 | 株式会社日立ハイテクノロジーズ | 半導体検査装置及び半導体検査方法 |
CN102870205B (zh) * | 2010-03-26 | 2016-01-27 | 株式会社爱发科 | 基板保持装置 |
WO2011125292A1 (ja) | 2010-04-02 | 2011-10-13 | 株式会社アルバック | スパッタリング装置及びスパッタリング方法 |
CN106686557B (zh) | 2017-03-10 | 2019-05-03 | Oppo广东移动通信有限公司 | 广播处理方法、装置和终端设备 |
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2019
- 2019-05-08 SG SG11202007783XA patent/SG11202007783XA/en unknown
- 2019-05-08 JP JP2020527247A patent/JP6898526B2/ja active Active
- 2019-05-08 CN CN201980043302.8A patent/CN112335031B/zh active Active
- 2019-05-08 US US16/970,014 patent/US11257702B2/en active Active
- 2019-05-08 WO PCT/JP2019/018354 patent/WO2020003746A1/ja active Application Filing
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US20200411356A1 (en) | 2020-12-31 |
SG11202007783XA (en) | 2021-01-28 |
US11257702B2 (en) | 2022-02-22 |
CN112335031A (zh) | 2021-02-05 |
WO2020003746A1 (ja) | 2020-01-02 |
JPWO2020003746A1 (ja) | 2021-03-11 |
CN112335031B (zh) | 2024-05-03 |
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