JP6884005B2 - 発光素子、表示装置、電子機器、及び照明装置 - Google Patents

発光素子、表示装置、電子機器、及び照明装置 Download PDF

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JP6884005B2
JP6884005B2 JP2017030647A JP2017030647A JP6884005B2 JP 6884005 B2 JP6884005 B2 JP 6884005B2 JP 2017030647 A JP2017030647 A JP 2017030647A JP 2017030647 A JP2017030647 A JP 2017030647A JP 6884005 B2 JP6884005 B2 JP 6884005B2
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light emitting
emitting element
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light
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JP2017152695A (ja
JP2017152695A5 (https=
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俊毅 佐々木
俊毅 佐々木
李甫 堅石
李甫 堅石
諒平 山岡
諒平 山岡
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Semiconductor Energy Laboratory Co Ltd
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JP2017030647A 2016-02-23 2017-02-22 発光素子、表示装置、電子機器、及び照明装置 Active JP6884005B2 (ja)

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102660767B1 (ko) * 2015-02-06 2024-04-24 이데미쓰 고산 가부시키가이샤 유기 일렉트로루미네센스 소자 및 전자 기기
CN104966789A (zh) * 2015-06-30 2015-10-07 深圳市华星光电技术有限公司 一种电荷连接层及其制造方法、叠层oled器件
CN108346750B (zh) * 2017-08-08 2019-07-19 广东聚华印刷显示技术有限公司 电致发光器件及其发光层和应用
CN117715451A (zh) 2017-09-12 2024-03-15 株式会社半导体能源研究所 发光元件、发光装置、电子设备及照明装置
CN111373844A (zh) * 2017-11-28 2020-07-03 堺显示器制品株式会社 有机el发光元件及其制造方法
US10784172B2 (en) * 2017-12-29 2020-09-22 Texas Instruments Incorporated Testing solid state devices before completing manufacture
US11251430B2 (en) 2018-03-05 2022-02-15 The Research Foundation For The State University Of New York ϵ-VOPO4 cathode for lithium ion batteries
JP6776309B2 (ja) * 2018-03-30 2020-10-28 キヤノン株式会社 有機発光素子、表示装置、撮像装置および照明装置
WO2019229591A1 (ja) * 2018-05-31 2019-12-05 株式会社半導体エネルギー研究所 有機化合物、発光素子、発光装置、電子機器、および照明装置
CN109683736B (zh) * 2018-11-02 2024-08-13 北京奥特易电子科技有限责任公司 一种具有防夹和变色功能的车窗及包含该车窗的汽车
EP3730589B1 (en) * 2019-04-26 2022-01-05 Samsung Electronics Co., Ltd. Light emitting device and display device including the same
CN110429205B (zh) * 2019-07-31 2021-06-01 武汉华星光电半导体显示技术有限公司 一种显示面板及显示装置
EP4023431B1 (en) * 2019-08-30 2025-02-19 Keihin Ramtech Co., Ltd. Multilayer structure and method for producing multilayer structure
US11508928B2 (en) 2019-11-29 2022-11-22 Joled Inc. Self-luminous element and self-luminous display panel
KR20210090331A (ko) * 2020-01-09 2021-07-20 삼성디스플레이 주식회사 유기 발광 소자
CN111211246B (zh) * 2020-01-16 2023-01-10 合肥鑫晟光电科技有限公司 柔性衬底、显示面板及柔性衬底的制备方法
US12604603B2 (en) * 2020-04-22 2026-04-14 Sharp Kabushiki Kaisha Light-emitting element and display device
KR102798044B1 (ko) 2020-06-15 2025-04-22 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함한 전자 장치
CN112467058B (zh) * 2020-11-26 2023-03-07 深圳大学 一种三元激基复合物复合材料主体及其oled器件制备
JPWO2022137023A1 (https=) * 2020-12-25 2022-06-30
CN113241404B (zh) * 2021-03-29 2023-05-23 天津理工大学 基于二维氧化钼/硫化钼叠层结构的自选通器件及其制造方法
US20230087120A1 (en) * 2021-09-20 2023-03-23 Osram Opto Semiconductiors Gmbh Method for Producing a Structured Wavelength Conversion Layer and Optoelectronic Device with a Structured Wavelength Conversion Layer
CN114122094B (zh) * 2021-11-23 2025-09-30 京东方科技集团股份有限公司 双层oled显示单元、显示面板及电子设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG142163A1 (en) 2001-12-05 2008-05-28 Semiconductor Energy Lab Organic semiconductor element
JP3819792B2 (ja) 2002-03-15 2006-09-13 三洋電機株式会社 発光素子およびアクティブマトリクス型表示装置
EP2276088B1 (en) 2003-10-03 2018-02-14 Semiconductor Energy Laboratory Co, Ltd. Light emitting element, and light emitting device using the light emitting element
CN101640216B (zh) 2004-05-21 2011-09-28 株式会社半导体能源研究所 发光元件和发光设备
US7728517B2 (en) 2005-05-20 2010-06-01 Lg Display Co., Ltd. Intermediate electrodes for stacked OLEDs
JP5759669B2 (ja) 2008-12-01 2015-08-05 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、および照明装置
TWI522007B (zh) 2008-12-01 2016-02-11 半導體能源研究所股份有限公司 發光元件、發光裝置、照明裝置、及電子裝置
EP2365556B1 (en) 2010-03-08 2014-07-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US8957442B2 (en) 2011-02-11 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
JP2012186392A (ja) 2011-03-07 2012-09-27 Seiko Epson Corp 発光素子、発光装置、表示装置および電子機器
WO2015118426A2 (en) 2014-02-06 2015-08-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, lighting device, and electronic appliance
TWI713447B (zh) 2014-04-30 2020-12-21 日商半導體能源研究所股份有限公司 發光元件、發光裝置、照明裝置、及電子設備

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