JP6883145B2 - 磁性ターゲット材料を用いたスパッタリング源の磁力解放 - Google Patents
磁性ターゲット材料を用いたスパッタリング源の磁力解放 Download PDFInfo
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- JP6883145B2 JP6883145B2 JP2020504358A JP2020504358A JP6883145B2 JP 6883145 B2 JP6883145 B2 JP 6883145B2 JP 2020504358 A JP2020504358 A JP 2020504358A JP 2020504358 A JP2020504358 A JP 2020504358A JP 6883145 B2 JP6883145 B2 JP 6883145B2
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- 239000013077 target material Substances 0.000 title claims description 25
- 238000004544 sputter deposition Methods 0.000 title description 5
- 230000007246 mechanism Effects 0.000 claims description 46
- 239000003507 refrigerant Substances 0.000 claims description 37
- 230000006835 compression Effects 0.000 claims description 13
- 238000007906 compression Methods 0.000 claims description 13
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 230000000116 mitigating effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
- H01F7/0231—Magnetic circuits with PM for power or force generation
- H01F7/0252—PM holding devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Description
例示的な実施形態
Claims (6)
- 回転ターゲットカソードのための磁石バーアセンブリであって、前記磁石バーアセンブリは、
支持構造と、
前記支持構造に移動可能に取り付けられる磁石バー構造であって、前記磁石バー構造が、複数の磁石を含む、磁石バー構造と、
前記支持構造および前記磁石バー構造に動作可能に連結される位置決め機構であって、前記磁石バー構造を格納位置と展開位置との間で移動させるように構成され、また前記支持構造と前記磁石バー構造とに連結されたばねおよび膨張可能なブラダアセンブリを有する、位置決め機構と、を備え、
前記ばねおよび膨張可能なブラダアセンブリは、
前記支持構造と前記磁石バー構造とに連結された1組の圧縮ばねと、
前記支持構造と前記圧縮ばねを通って延在し、前記磁石バー構造に結合し、前記圧縮ばねに係合する、1組の作動ボルトと、
前記支持構造と前記磁石バー構造との間に連結され、膨張可能なブラダを有する可撓性冷媒管とを備え、
前記可撓性冷媒管が両方の端部で開放されている場合、前記圧縮ばねが付勢されて、前記作動ボルトおよび前記磁石バー構造を前記格納位置に引き込み、
前記可撓性冷媒管が両方の端部で閉塞されていて加圧される場合、磁石バー構造を前記支持構造から離して前記展開位置に押し出し、
前記磁石バー構造の前記格納位置は、前記磁石バーアセンブリがターゲットシリンダに挿入されるとき、または前記ターゲットシリンダから取り出されるときに、前記磁石と前記ターゲットシリンダの磁性ターゲット材料との間の磁力を実質的に低減させ、
前記磁石バー構造の前記展開位置は、前記磁石バーアセンブリが前記ターゲットシリンダ内にあるときに、前記磁石と前記磁性ターゲット材料との間の前記磁力を実質的に増加させて、前記磁石バー構造からの磁場が前記磁性ターゲット材料内を貫通することができるようにする、磁石バーアセンブリ。 - 前記支持構造に移動可能に接続される複数のローラをさらに備え、前記ローラは、前記磁石バー構造を前記ターゲットシリンダの内面から離して保持するように構成されている、請求項1に記載の磁石バーアセンブリ。
- 磁力歪み緩和アセンブリを更に備え、前記磁力歪み緩和アセンブリは、
前記支持構造の第1のエンドプレートに第1の端部で連結されるエンドブロック接続部と、
前記支持構造の第2のエンドプレートに前記第1の端部とは反対側の第2の端部で連結されるエンドキャップ接続部と、を備え、
前記第1と第2のエンドプレートは、前記支持構造の一対の対向するサイドプレート間で各々移動可能に結合され、
前記エンドブロック接続部および前記エンドキャップ接続部の歪み緩和は、前記対向するサイドプレート内の各スロットに沿って移動可能である、前記第1と第2のエンドプレートによって提供され、
前記歪み緩和アセンブリは、前記磁石バーアセンブリと前記磁性ターゲットシリンダとの間の磁力が、前記エンドブロック接続部および前記エンドキャップ接続部に伝達されることを防止する、請求項1に記載の磁石バーアセンブリ。 - 前記支持構造は、前記展開位置にあるときの前記磁石バー構造と前記ターゲットシリンダとの間の距離を正確に制限するように、実質的に剛性である、請求項1に記載の磁石バーアセンブリ。
- 前記可撓性冷媒管は、冷媒供給部および冷媒戻り部を前記ターゲットシリンダの一方の側にのみに配置することができる冷媒通路を備える、請求項1に記載の磁石バーアセンブリ。
- 前記磁石バー構造と前記圧縮ばねとの間の展開距離は、前記作動ボルトを前記磁石バー構造に螺合させ、前記磁石バー構造から螺合解除することにより調整可能であり、前記磁石バー構造の長さに沿った調整を行い、前記ターゲットシリンダの表面の磁場を均一に調整することが可能になる、請求項1に記載の磁石バーアセンブリ。
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JP2021078478A JP7233466B2 (ja) | 2017-08-16 | 2021-05-06 | 磁性ターゲット材料を用いたスパッタリング源の磁力解放 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/678,962 US10727034B2 (en) | 2017-08-16 | 2017-08-16 | Magnetic force release for sputtering sources with magnetic target materials |
US15/678,962 | 2017-08-16 | ||
PCT/US2018/042318 WO2019036136A1 (en) | 2017-08-16 | 2018-07-16 | MAGNETIC FORCE RELEASE FOR SPRAY SOURCES WITH MAGNETIC TARGET MATERIALS |
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JP2021078478A Active JP7233466B2 (ja) | 2017-08-16 | 2021-05-06 | 磁性ターゲット材料を用いたスパッタリング源の磁力解放 |
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US (1) | US10727034B2 (ja) |
EP (2) | EP4092715B1 (ja) |
JP (2) | JP6883145B2 (ja) |
KR (1) | KR102179775B1 (ja) |
CN (2) | CN111316397B (ja) |
TW (2) | TWI763444B (ja) |
WO (1) | WO2019036136A1 (ja) |
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KR102105868B1 (ko) * | 2018-10-24 | 2020-04-29 | 가부시키가이샤 알박 | 캐소드 장치 및 스퍼터링 장치 |
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JPH0610774B2 (ja) | 1987-12-17 | 1994-02-09 | 株式会社クボタ | 自動走行作業車の撮像式操向制御装置 |
JPH0822367B2 (ja) | 1992-11-27 | 1996-03-06 | 富士通株式会社 | ガス浄化装置 |
JPH1161403A (ja) * | 1997-08-20 | 1999-03-05 | Mitsubishi Electric Corp | スパッタリング装置及びスパッタリング方法 |
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- 2018-07-16 CN CN201880053183.XA patent/CN111316397B/zh active Active
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- 2018-07-16 EP EP18846977.9A patent/EP3669394B1/en active Active
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Publication number | Publication date |
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CN113621923A (zh) | 2021-11-09 |
TWI726232B (zh) | 2021-05-01 |
US10727034B2 (en) | 2020-07-28 |
EP3669394A4 (en) | 2021-05-26 |
WO2019036136A1 (en) | 2019-02-21 |
US20190057848A1 (en) | 2019-02-21 |
KR20200032734A (ko) | 2020-03-26 |
EP3669394A1 (en) | 2020-06-24 |
EP3669394B1 (en) | 2022-08-24 |
EP4092715A1 (en) | 2022-11-23 |
JP2020531681A (ja) | 2020-11-05 |
JP2021120488A (ja) | 2021-08-19 |
CN113621923B (zh) | 2024-03-19 |
KR102179775B1 (ko) | 2020-11-18 |
TW202129043A (zh) | 2021-08-01 |
EP4092715B1 (en) | 2024-02-21 |
CN111316397A (zh) | 2020-06-19 |
TWI763444B (zh) | 2022-05-01 |
CN111316397B (zh) | 2021-05-25 |
TW201910543A (zh) | 2019-03-16 |
JP7233466B2 (ja) | 2023-03-06 |
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