JP6875386B2 - Ｃｖｄ装置 - Google Patents

Ｃｖｄ装置 Download PDF

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Publication number
JP6875386B2
JP6875386B2 JP2018516838A JP2018516838A JP6875386B2 JP 6875386 B2 JP6875386 B2 JP 6875386B2 JP 2018516838 A JP2018516838 A JP 2018516838A JP 2018516838 A JP2018516838 A JP 2018516838A JP 6875386 B2 JP6875386 B2 JP 6875386B2
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JP
Japan
Prior art keywords
susceptor
preheating ring
ring
gap
preheating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018516838A
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English (en)
Japanese (ja)
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JP2018531323A5 (https=
JP2018531323A6 (ja
JP2018531323A (ja
Inventor
ワン・ガン
ショーン・ジョージ・トーマス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
Original Assignee
GlobalWafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GlobalWafers Co Ltd filed Critical GlobalWafers Co Ltd
Publication of JP2018531323A publication Critical patent/JP2018531323A/ja
Publication of JP2018531323A6 publication Critical patent/JP2018531323A6/ja
Publication of JP2018531323A5 publication Critical patent/JP2018531323A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2018516838A 2015-10-01 2016-09-29 Ｃｖｄ装置 Active JP6875386B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562235826P 2015-10-01 2015-10-01
US62/235,826 2015-10-01
PCT/US2016/054507 WO2017059114A1 (en) 2015-10-01 2016-09-29 Cvd apparatus

Publications (4)

Publication Number Publication Date
JP2018531323A JP2018531323A (ja) 2018-10-25
JP2018531323A6 JP2018531323A6 (ja) 2018-12-13
JP2018531323A5 JP2018531323A5 (https=) 2019-11-07
JP6875386B2 true JP6875386B2 (ja) 2021-05-26

Family

ID=57178489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018516838A Active JP6875386B2 (ja) 2015-10-01 2016-09-29 Ｃｖｄ装置

Country Status (6)

Country Link
US (1) US11598021B2 (https=)
EP (1) EP3356573B1 (https=)
JP (1) JP6875386B2 (https=)
CN (1) CN108603290B (https=)
TW (1) TWI694169B (https=)
WO (1) WO2017059114A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12252806B2 (en) * 2020-12-31 2025-03-18 Globalwafers Co., Ltd Systems and methods for a preheat ring in a semiconductor wafer reactor
US11495487B1 (en) * 2021-05-13 2022-11-08 Globalwafers Co., Ltd. Methods for conditioning a processing reactor
US11515196B1 (en) 2021-05-13 2022-11-29 Globalwafers Co., Ltd. Methods for etching a semiconductor structure and for conditioning a processing reactor
JP7773566B2 (ja) 2021-05-13 2025-11-19 グローバルウェーハズ カンパニー リミテッド 半導体構造体のエッチング方法及び処理リアクタの調整方法
CN113981531B (zh) * 2021-10-26 2022-10-04 江苏天芯微半导体设备有限公司 一种预热环及衬底处理设备
US20250259864A1 (en) * 2024-02-12 2025-08-14 Agnitron Technology, Inc. Rapid thermal cycling annealing apparatus

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06132231A (ja) * 1992-10-20 1994-05-13 Hitachi Ltd Ｃｖｄ装置
DE69331659T2 (de) 1993-01-13 2002-09-12 Applied Materials Inc Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung
JPH1060624A (ja) * 1996-08-20 1998-03-03 Matsushita Electric Ind Co Ltd スパッタリング装置
US6364957B1 (en) * 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6170433B1 (en) * 1998-07-23 2001-01-09 Applied Materials, Inc. Method and apparatus for processing a wafer
US6896738B2 (en) * 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
JP2003142408A (ja) 2001-10-31 2003-05-16 Shin Etsu Handotai Co Ltd 枚葉式熱処理装置および熱処理方法
JP3758579B2 (ja) 2002-01-23 2006-03-22 信越半導体株式会社 熱処理装置および熱処理方法
JP2004134625A (ja) 2002-10-11 2004-04-30 Toshiba Corp 半導体装置の製造方法と製造装置
FR2846786B1 (fr) * 2002-11-05 2005-06-17 Procede de recuit thermique rapide de tranches a couronne
US7311784B2 (en) * 2002-11-26 2007-12-25 Tokyo Electron Limited Plasma processing device
US9890455B2 (en) * 2010-10-29 2018-02-13 Applied Materials, Inc. Pre-heat ring designs to increase deposition uniformity and substrate throughput
DE102011007632B3 (de) * 2011-04-18 2012-02-16 Siltronic Ag Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe
US9117670B2 (en) * 2013-03-14 2015-08-25 Sunedison Semiconductor Limited (Uen201334164H) Inject insert liner assemblies for chemical vapor deposition systems and methods of using same
US10047457B2 (en) 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
US20150083046A1 (en) 2013-09-26 2015-03-26 Applied Materials, Inc. Carbon fiber ring susceptor
KR101539298B1 (ko) 2013-11-25 2015-07-29 주식회사 엘지실트론 에피택셜 웨이퍼 성장 장치
CN105981142B (zh) * 2013-12-06 2019-11-01 应用材料公司 用于使预热构件自定中心的装置

Also Published As

Publication number Publication date
CN108603290B (zh) 2021-09-10
TW201720954A (zh) 2017-06-16
WO2017059114A1 (en) 2017-04-06
CN108603290A (zh) 2018-09-28
EP3356573A1 (en) 2018-08-08
US11598021B2 (en) 2023-03-07
US20180282865A1 (en) 2018-10-04
TWI694169B (zh) 2020-05-21
EP3356573B1 (en) 2021-03-17
JP2018531323A (ja) 2018-10-25

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