JP6872542B2 - 可変包絡線信号の増幅段の製作方法 - Google Patents

可変包絡線信号の増幅段の製作方法 Download PDF

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JP6872542B2
JP6872542B2 JP2018522515A JP2018522515A JP6872542B2 JP 6872542 B2 JP6872542 B2 JP 6872542B2 JP 2018522515 A JP2018522515 A JP 2018522515A JP 2018522515 A JP2018522515 A JP 2018522515A JP 6872542 B2 JP6872542 B2 JP 6872542B2
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amplifier
power
average
pin
value
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JP2018536349A (ja
JP2018536349A5 (enExample
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ジョフロワ スベルカズ−プン，
ジョフロワ スベルカズ−プン，
リュック ラピエール，
リュック ラピエール，
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Centre National dEtudes Spatiales CNES
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/04—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers
    • H03F1/06—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers to raise the efficiency of amplifying modulated radio frequency waves; to raise the efficiency of amplifiers acting also as modulators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/22—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with tubes only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/54—Amplifiers using transit-time effect in tubes or semiconductor devices
    • H03F3/58—Amplifiers using transit-time effect in tubes or semiconductor devices using travelling-wave tubes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/102—A non-specified detector of a signal envelope being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/462—Indexing scheme relating to amplifiers the current being sensed
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/465—Power sensing
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/471—Indexing scheme relating to amplifiers the voltage being sensed
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
JP2018522515A 2015-11-04 2016-11-03 可変包絡線信号の増幅段の製作方法 Active JP6872542B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1560585A FR3043286B1 (fr) 2015-11-04 2015-11-04 Procede de fabrication d'un etage d'amplification d'un signal a enveloppe variable
FR1560585 2015-11-04
PCT/EP2016/076552 WO2017076969A1 (fr) 2015-11-04 2016-11-03 Procédé de fabrication d'un étage d'amplification d'un signal à enveloppe variable

Publications (3)

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JP2018536349A JP2018536349A (ja) 2018-12-06
JP2018536349A5 JP2018536349A5 (enExample) 2020-12-24
JP6872542B2 true JP6872542B2 (ja) 2021-05-19

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JP2018522515A Active JP6872542B2 (ja) 2015-11-04 2016-11-03 可変包絡線信号の増幅段の製作方法

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US (1) US10826444B2 (enExample)
EP (1) EP3371884B1 (enExample)
JP (1) JP6872542B2 (enExample)
FR (1) FR3043286B1 (enExample)
WO (1) WO2017076969A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10985951B2 (en) 2019-03-15 2021-04-20 The Research Foundation for the State University Integrating Volterra series model and deep neural networks to equalize nonlinear power amplifiers
US12381522B2 (en) 2021-03-09 2025-08-05 Skyworks Solutions, Inc. Average power tracking systems with fast transient settling
CN116743095B (zh) * 2023-03-10 2024-06-25 振弦(苏州)微电子有限公司 一种改善各功率管输出功率一致性的pa及设计方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1453773A (fr) 1965-11-16 1966-06-03 Heberlein & Co Ag Montage photoélectrique, notamment pour épurateurs électroniques de fils
US6141541A (en) * 1997-12-31 2000-10-31 Motorola, Inc. Method, device, phone and base station for providing envelope-following for variable envelope radio frequency signals
FI106412B (fi) * 1998-11-10 2001-01-31 Nokia Mobile Phones Ltd Lineaarinen tehovahvistinjärjestely ja menetelmä sen käyttämiseksi
JP2001094350A (ja) * 1999-08-31 2001-04-06 Samsung Electronics Co Ltd 携帯電話端末用電力増幅器
GB2427772B (en) * 2002-09-26 2007-04-11 Qualcomm Inc A transmitter
GB2438457B (en) * 2006-03-17 2011-09-14 Nujira Ltd Joint optimisation of supply and bias modulation
US8185066B2 (en) * 2009-10-23 2012-05-22 Sony Mobile Communications Ab Multimode power amplifier with predistortion
GB2500708B (en) * 2012-03-30 2016-04-13 Nujira Ltd Determination of envelope shaping and signal path predistortion of an ET amplification stage using device characterisation data
EP2840709A1 (en) * 2013-08-22 2015-02-25 Telefonaktiebolaget L M Ericsson (publ) Amplifier and method of amplification
US9520907B2 (en) * 2014-02-16 2016-12-13 Mediatek Inc. Methods and apparatus for envelope tracking system

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Publication number Publication date
EP3371884B1 (fr) 2024-08-28
EP3371884A1 (fr) 2018-09-12
FR3043286B1 (fr) 2018-08-10
JP2018536349A (ja) 2018-12-06
EP3371884C0 (fr) 2024-08-28
FR3043286A1 (fr) 2017-05-05
US20180316320A1 (en) 2018-11-01
US10826444B2 (en) 2020-11-03
WO2017076969A1 (fr) 2017-05-11

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