JP6871338B2 - Discrete parts - Google Patents

Description

This invention also relates to a discrete unit products.

Conventionally, a chip resistor as a discrete component has a configuration including an insulating substrate such as ceramic, a resistance film formed by screen-printing a material paste on the surface thereof, and an electrode connected to the resistance film. .. Then, in order to match the resistance value of the chip resistor with the target value, laser trimming is performed by irradiating the resistance film with a laser beam to engrave a trimming groove (see Patent Document 1).

Japanese Unexamined Patent Publication No. 2001-76912

Conventional chip resistors cannot handle a wide range of resistance values because the resistance value is adjusted to the target value by laser trimming.
Further, since chip resistors are becoming smaller year by year, even if a high resistance product is to be developed, it is difficult to increase the resistance due to the limitation of the arrangement area of the resistor film.
The present invention has been made based on this background, and an object of the present invention is to provide a discrete component whose resistance value can be appropriately adjusted.

In the discrete component according to the first aspect, a circuit forming surface is set on one surface which is a facing surface facing the mounting target at the time of mounting, and a plurality of trenches are formed in a parallel streak on the circuit forming surface. A resistance network having a silicon substrate, one end and the other end, and formed on the circuit forming surface of the substrate, wherein the resistance network includes a large number of unit resistors R. Each unit resistor R is a resistor film having a predetermined width and a length, and the resistor film which is laminated on the resistor film and short-circuited with the resistor film left a predetermined length in the length direction. A resistor film comprising a conductor film piece of equal width and remaining unshortened in the unit resistor R in each of the trenches in a direction across the trench along one side surface, bottom surface and the other side surface of the trench. Are arranged via an insulating film, whereby a plurality of resistance circuits each having resistance values set in an equivalence sequence are provided, and the plurality of resistance circuits are detachably connected to each of the plurality of resistance circuits. A plurality of fuses that electrically incorporate a resistance circuit or electrically separate an arbitrary resistance circuit, a protective layer formed on the circuit forming surface of the substrate and covering the resistance network, and the resistance. A first connection formed through the protective layer so as to be connected to the one end of the network, having a coating portion covering the protective layer, and formed only on the circuit forming surface of the substrate. It has an electrode and a covering portion formed through the protective layer so as to be connected to the other end of the resistance network and covering the protective layer, and is provided only on the circuit forming surface of the substrate. Each of the plurality of resistance circuits includes a resistor film line extending in a line shape, and the plurality of fuse films include an arrangement region along the inner side of the second connection electrode. And they are arranged so that the arrangement direction is linear .

FIG. 1A is a schematic perspective view showing an external configuration of a chip resistor 10 according to an embodiment of the first invention, and FIG. 1B is a side view showing a state in which the chip resistor 10 is mounted on a substrate. Is. FIG. 2 is a plan view of the chip resistor 10, and is a diagram showing the arrangement relationship of the first connection electrode 12, the second connection electrode 13, and the resistance network 14 and the configuration of the resistance network 14 in a plan view. FIG. 3A is an enlarged plan view of a part of the resistance network 14 shown in FIG. FIG. 3B is a cross-sectional view taken along the line BB of FIG. 3A. FIG. 3C is a cross-sectional view taken along the line CC of FIG. 3A. 4A, 4B and 4C are diagrams showing the electrical features of the resistor membrane line 20 and the conductor membrane 21 with circuit symbols and electrical circuit diagrams. 5A is a partially enlarged plan view of a region including the fuse film F drawn by enlarging a part of the plan view of the chip resistor shown in FIG. 2, and FIG. 5B is a cross-sectional structure along BB of FIG. 5A. It is a figure which shows. FIG. 6 shows the arrangement relationship of the connecting conductor film C and the fuse film F connecting a plurality of types of resistance units in the resistance network 14 shown in FIG. 2, and being connected to the connecting conductor film C and the fuse film F. It is a figure which graphically shows the connection relationship with a plurality of types of resistance units. FIG. 7 is an electric circuit diagram of the resistance network 14. FIG. 8 is a plan view of the chip resistor 30, which shows the arrangement relationship of the first connection electrode 12, the second connection electrode 13, and the resistance network 14, and the configuration of the resistance network 14 in a plan view. FIG. 9 shows the arrangement relationship of the connecting conductor film C and the fuse film F connecting the plurality of types of resistance units in the resistance network 14 shown in FIG. 8 and the connection relationship between the connecting conductor film C and the fuse film F. It is a figure which graphically shows the connection relationship with a plurality of types of resistance units. FIG. 10 is an electric circuit diagram of the resistance network 14. 11A and 11B are electric circuit diagrams showing a modification of the electric circuit shown in FIG. FIG. 12 is an electric circuit diagram of the resistance network 14 according to still another embodiment of the first invention. FIG. 13 is an electric circuit diagram showing a configuration example of a resistance network in a chip resistor displaying a specific resistance value. 14A and 14B are schematic plan views for explaining the main structure of the chip resistor 90 according to still another embodiment of the first invention. FIG. 15A is a schematic cross-sectional view showing the main structure of the chip resistor 100 according to still another embodiment of the first invention, and FIG. 15B is a schematic view taken along the arrow B of FIG. 15A. It is a partial plan view. FIG. 16 is a circuit diagram of a discrete component 1 according to an embodiment of the first invention. FIG. 17 is an illustrated diagram illustrating that the chip resistor is cut out from the wafer. FIG. 18A is a schematic perspective view showing an external configuration of the chip resistor 210 according to the embodiment of the second invention, and FIG. 18B is a side view showing a state in which the chip resistor 210 is mounted on a substrate. Is. FIG. 19 is a plan view of the chip resistor 210, showing the arrangement relationship of the first connection electrode 212, the second connection electrode 213, and the resistance network 214, and the configuration of the resistance network 214 in a plan view. FIG. 20A is an enlarged plan view of a part of the resistance network 214 shown in FIG. FIG. 20B is a cross-sectional view taken along the line BB of FIG. 20A. FIG. 20C is a cross-sectional view taken along the line CC of FIG. 20A. 21A, 21B and 21C are diagrams showing the electrical characteristics of the resistor film line 220 and the conductor film 221 with circuit symbols and electrical circuit diagrams. 22A is a partially enlarged plan view of a region including the fuse film F drawn by enlarging a part of the plan view of the chip resistor shown in FIG. 19, and FIG. 22B is a cross-sectional structure along BB of FIG. 22A. It is a figure which shows. FIG. 23 shows the arrangement relationship of the connecting conductor film C and the fuse film F connecting the plurality of types of resistance units in the resistance network 214 shown in FIG. 19, and being connected to the connecting conductor film C and the fuse film F. It is a figure which graphically shows the connection relationship with a plurality of types of resistance units. FIG. 24 is an electric circuit diagram of the resistance network 214. FIG. 25 is a plan view of the chip resistor 230, showing the arrangement relationship of the first connection electrode 212, the second connection electrode 213, and the resistance network 214, and the configuration of the resistance network 214 in a plan view. FIG. 26 shows the arrangement relationship of the connecting conductor film C and the fuse film F for connecting a plurality of types of resistance units in the resistance network 214 shown in FIG. 25, and the connection to the connecting conductor film C and the fuse film F. It is a figure which graphically shows the connection relationship with a plurality of types of resistance units. FIG. 27 is an electric circuit diagram of the resistance network 214. 28A and 28B are electric circuit diagrams showing a modification of the electric circuit shown in FIG. 27. FIG. 29 is an electric circuit diagram of the resistance network 214 according to still another embodiment of the second invention. FIG. 30 is an electric circuit diagram showing a configuration example of a resistance network in a chip resistor displaying a specific resistance value. 31A is a schematic cross-sectional view showing the main structure of the chip resistor 260 according to still another embodiment of the second invention, FIG. 31B is a schematic plan view of FIG. 31A, and FIG. 31C. Is a circuit diagram of the chip resistor 260 of FIG. 31A. FIG. 32 is a schematic vertical sectional view showing the structure of a main part of the chip resistor 270 according to still another embodiment of the second invention. FIG. 33 is a schematic vertical cross-sectional view showing the structure of a main part of the chip resistor 270 according to still another embodiment of the second invention. FIG. 34 is a plan view of the chip resistor 280 according to still another embodiment of the second invention. FIG. 35 is a cross-sectional view schematically showing a cross-sectional structure along AA of FIG. 34. FIG. 36 is a circuit diagram of a discrete component 21 according to an embodiment of the second invention. FIG. 37 is an illustrated diagram illustrating that the chip resistor is cut out from the wafer.

Hereinafter, embodiments of the first invention and the second invention will be described in detail with reference to the accompanying drawings.
[1] First Invention An embodiment of the first invention will be described in detail with reference to the accompanying drawings.
FIG. 1A is a schematic perspective view showing an external configuration of a chip resistor 10 according to an embodiment of the first invention, and FIG. 1B is a side view showing a state in which the chip resistor 10 is mounted on a substrate. Is.

With reference to FIG. 1A, the chip resistor 10 according to the embodiment of the first invention includes a first connection electrode 12 formed on the substrate 11, a second connection electrode 13, and a resistance network 14. ing. The substrate 11 has a rectangular parallelepiped shape that is substantially rectangular in a plan view, and as an example, the length L in the long side direction = 0.3 m.
It is a minute chip having a size of m, a width W = 0.15 mm in the short side direction, and a thickness T = 0.1 mm. The substrate 11 can be made of, for example, silicon, glass, ceramic, or the like.
In the following embodiment, the case where the substrate 11 is a silicon substrate will be described as an example.

As shown in FIG. 17, the chip resistor 10 has a large number of chip resistors 10 formed in a grid pattern on a wafer Wa (a semiconductor wafer such as a silicon wafer, or a conductor wafer or a non-conductive wafer). It is obtained by cutting the wafer Wa and separating it into individual chip resistors 10.
On the silicon substrate 11, the first connection electrode 12 is one short side 111 of the silicon substrate 11.
It is a rectangular electrode long in the direction of the short side 111 provided along the above. The second connection electrode 13 is a rectangular electrode provided along the other short side 112 on the silicon substrate 11 and long in the direction of the short side 112. The resistance network 14 is provided in a central region (circuit forming surface or element forming surface) sandwiched between the first connection electrode 12 and the second connection electrode 13 on the silicon substrate 11. One end side of the resistance network 14 is electrically connected to the first connection electrode 12, and the other end side of the resistance network 14 is electrically connected to the second connection electrode 13. The first connection electrode 12, the second connection electrode 13, and the resistance network 14 can be provided on the silicon substrate 11 by using a semiconductor manufacturing process, for example.

The first connection electrode 12 and the second connection electrode 13 function as external connection electrodes, respectively. In the state where the chip resistor 10 is mounted on the circuit board 15, as shown in FIG. 1B, as shown in FIG. 1B.
The first connection electrode 12 and the second connection electrode 13 are electrically and mechanically connected to the circuit (not shown) of the circuit board 15 by the solder 16. The first connection electrode 12 and the second connection electrode 13 that function as external connection electrodes are formed of gold (Au) or gold-plated on the surface in order to improve solder wettability and reliability. Is desirable.

FIG. 2 is a plan view of the chip resistor 10, and shows the arrangement relationship of the first connection electrode 12, the second connection electrode 13, and the resistance network 14, and the configuration (layout pattern) of the resistance network 14 in a plan view. ing.
With reference to FIG. 2, the chip resistor 10 has a first connection electrode 12 having a substantially rectangular shape in a plan view arranged along one short side 111 on the upper surface of the silicon substrate and the other short side on the upper surface of the silicon substrate. A resistance network provided in a region of a rectangular shape in a plan view between a second connection electrode 13 having a substantially rectangular shape in a plan view arranged along a side 112 along a long side and a rectangular area in a plan view between the first connection electrode 12 and the second connection electrode 13. 14 and are included.

In the resistance network 14, a large number of unit resistors R having equal resistance values arranged in a matrix on the silicon substrate 11 (in the example of FIG. 2, 8 along the row direction (longitudinal direction of the silicon substrate)). The unit resistors R are arranged, 44 unit resistors R are arranged along the row direction (width direction of the silicon substrate), and the structure includes a total of 352 unit resistors R). .. Then, a predetermined number of 1 to 64 of these large number of unit resistors R are electrically connected to form a plurality of types of resistance circuits according to the number of connected unit resistors R. The formed plurality of types of resistance circuits are connected in a predetermined manner by a conductor film C (wiring film formed of a conductor).

Further, the resistance circuit may be electrically incorporated into the resistance network 14 or the resistance network 14 may be incorporated.
Can be blown to electrically separate from. The plurality of fuse films F are the second connection electrode 1.
Along the inner side of No. 3, fuse films F having a plurality of arrangement areas are provided, but are arranged so as to be linear. More specifically, the plurality of fuse films F and the connecting conductor films C are arranged so as to be adjacent to each other, and the arrangement directions thereof are linear.

FIG. 3A is an enlarged plan view of a part of the resistance network 14 shown in FIG. 2, and is a plan view of FIG. 3B.
3C and 3C are a longitudinal sectional view (cross-sectional view taken along line BB of FIG. 3A) and a longitudinal sectional view in the width direction drawn to explain the structure of the unit resistor R in the resistance network 14, respectively. It is a top view (cross-sectional view taken along the line CC of FIG. 3A).
The configuration of the unit resistor R will be described with reference to FIGS. 3A, 3B and 3C.

_{An insulating layer (SiO 2} ) 19 is formed on the upper surface of the silicon substrate 11 as a substrate, and a resistor film 20 is arranged on the insulating layer 19. The resistor film 20 is TiN, TiON or Ti.
Formed by SiON. The resistor film 20 has a first connection electrode 12 and a second connection electrode 13.
A plurality of resistor membranes (hereinafter referred to as "resistor membrane lines") extending in a straight line in parallel with each other, and the resistor membrane line 20 is cut at a predetermined position in the line direction. There is. An aluminum film as a conductor film piece 21 is laminated on the resistor film line 20.
Each conductor film piece 21 is laminated on the resistor film line 20 at regular intervals R in the line direction.

The electrical characteristics of the resistor film line 20 and the conductor film piece 21 having this configuration are indicated by circuit symbols.
It is as shown in FIGS. 4A to 4C. That is, as shown in FIG. 4A, the resistor film line 20 portions in the region of the predetermined interval R each form a unit resistor R having a constant resistance value r. In the region where the conductor film pieces 21 are laminated, the resistor film line 20 is short-circuited by the conductor film pieces 21. Therefore, a resistance circuit is formed in which the unit resistor R of the resistor r shown in FIG. 4B is connected in series.

Further, since the adjacent resistor film lines 20 are connected to each other by the resistor film line 20 and the conductor film piece 21, the resistance network shown in FIG. 3A constitutes the resistance circuit shown in FIG. 4C.
Here, an example of the manufacturing process of the resistance network 14 will be briefly described. (1) The surface of the silicon substrate 11 is thermally oxidized to form a _{silicon dioxide (SiO 2) layer as an insulating layer 19.}
(2) Then, by sputtering, TiN, TiON or TiS is placed on the insulating layer 19.
The iON resistor film 20 is formed on the entire surface. (3) Further, the aluminum (Al) conductor film 21 is laminated on the resistor film 20 by sputtering. (4) After that, the conductor film 21 and the resistor film 2 are subjected to, for example, dry etching using a photolithography process.
0s are selectively removed to obtain a configuration in which the resistor film line 20 having a constant width extending in the row direction and the conductor film 21 are arranged in the column direction at regular intervals in a plan view as shown in FIG. 3A. .. At this time, a region in which the resistor film line 20 and the conductor film 21 are partially cut is also formed. (5
) Subsequently, the conductor film 21 laminated on the resistor film line 20 is selectively removed. As a result, a structure in which the conductor film pieces 21 are laminated on the resistor film line 20 at regular intervals R is obtained. (6) After that, a SiN film 22 as a protective film is deposited, and a polyimide layer 23 as a protective layer is further laminated on the SiN film 22.

In this embodiment, the unit resistors R included in the resistance network 14 formed on the silicon substrate 11 are laminated on the resistor film line 20 and the resistor film line 20 at regular intervals in the line direction. A resistor film line 20 at a fixed interval R portion including the plurality of conductor film pieces 21 and the conductor film pieces 21 are not laminated constitutes one unit resistor R. The resistor film lines 20 constituting the unit resistor R are all the same in shape and size. Therefore, based on the characteristic that the resistors films of the same shape and the same size formed on the substrate have almost the same value, a large number of unit resistors R arranged in a matrix on the silicon substrate 11 have the same resistance value. have.

The conductor film piece 21 laminated on the resistor film line 20 forms a unit resistor R and also serves as a connecting conductor film for connecting a plurality of unit resistors R to form a resistance circuit. I'm playing.
5A is a partially enlarged plan view of a region including the fuse film F drawn by enlarging a part of the plan view of the chip resistor 10 shown in FIG. 2, and FIG. 5B is a cross section taken along the line BB of FIG. 5A. It is a figure which shows the structure.

As shown in FIGS. 5A and 5B, the fuse film F is also formed of the conductor film 21 laminated on the resistor film 20. That is, it is formed of aluminum (Al), which is the same metal material as the conductor film piece 21, on the same layer as the conductor film piece 21 laminated on the resistor film line 20 forming the unit resistor R. As described above, the conductor film piece 21 is also used as a connecting conductor film C for electrically connecting a plurality of unit resistors R in order to form a resistance circuit.

That is, in the same layer laminated on the resistor film 20, a conductor film for forming a unit resistor R, a connecting conductor film for forming a resistance circuit, and a connecting conductor film for forming a resistance network 14. , The fuse film, and the resistance network 14, the first connection electrode 12 and the second connection electrode 1.
The conductor film for connecting to 3 is formed by the same manufacturing process (eg sputtering and photolithography process) using the same metal material (eg aluminum). This simplifies the manufacturing process of the chip resistor 10 and also
Various conductor films can be formed at the same time using a common mask. Further, the alignment with the resistor film 20 is also improved.

FIG. 6 shows the arrangement relationship of the connecting conductor film C and the fuse film F connecting the plurality of types of resistance circuits in the resistance network 14 shown in FIG. 2, and the plurality connected to the connecting conductor film C and the fuse film F. It is a figure which shows the connection relation with the kind of resistance circuit graphically.
With reference to FIG. 6, the first connection electrode 12 has a reference resistance circuit R8 included in the resistance network 14.
One end of is connected. The reference resistance circuit R8 is composed of eight unit resistors R connected in series, and the other ends are connected to the fuse film F1.

One end and the other end of a resistance circuit R64 composed of a series connection of 64 unit resistors R are connected to the fuse film F1 and the connecting conductor film C2.
One end and the other end of a resistance circuit R32 composed of a series connection of 32 unit resistors R are connected to the connecting conductor film C2 and the fuse film F4.
One end and the other end of a resistance circuit body R32 composed of a series connection of 32 unit resistors R are connected to the fuse film F4 and the connection conductor film C5.

One end and the other end of a resistance circuit R16 formed by connecting 16 unit resistors R in series are connected to the connecting conductor film C5 and the fuse film F6.
One end and the other end of a resistance circuit R8 composed of eight unit resistors R connected in series are connected to the fuse film F7 and the connecting conductor film C9.
One end and the other end of a resistance circuit R4 composed of a series connection of four unit resistors R are connected to the connecting conductor film C9 and the fuse film F10.

One end and the other end of a resistance circuit R2 composed of a series connection of two unit resistors R are connected to the fuse film F11 and the connecting conductor film C12.
One end and the other end of a resistance circuit body R1 composed of one unit resistor R are connected to the connecting conductor film C12 and the fuse film F13.
One end and the other end of a resistance circuit R / 2 composed of two unit resistors R connected in parallel are connected to the fuse film F13 and the connecting conductor film C15.

One end and the other end of a resistance circuit R / 4 composed of four unit resistors R connected in parallel are connected to the connecting conductor film C15 and the fuse film F16.
One end and the other end of a resistance circuit R / 8 composed of eight unit resistors R connected in parallel are connected to the fuse film F16 and the connecting conductor film C18.
One end and the other end of a resistance circuit R / 16 composed of parallel connections of 16 unit resistors R are connected to the connecting conductor film C18 and the fuse film F19.

A resistor circuit R / 32 composed of 32 unit resistors R connected in parallel is connected to the fuse film F19 and the connecting conductor film C22.
The plurality of fuse films F and the connecting conductor film C are a fuse film F1, a connecting conductor film C2, a fuse film F3, a fuse film F4, a connecting conductor film C5, a fuse film F6, a fuse film F7, and a connecting conductor, respectively. Film C8, connecting conductor film C9, fuse film F10, fuse film F11
, Connection conductor film C12, fuse film F13, fuse film F14, connection conductor film C15, fuse film F16, fuse film F17, connection conductor film C18, fuse film F19, fuse film F20, connection conductor film C21, connection The conductor film C22 is arranged in a straight line and connected in series. When each fuse film F is blown, the electrical connection between the fuse film F and the connecting conductor film C adjacent to the fuse film F is cut off.

This configuration is shown in FIG. 7 in an electric circuit diagram. That is, in a state where all the fuse films F are not blown, the resistance network 14 has the first connection electrode 12 and the second connection electrode 1.
Reference resistance circuit R8 (resistance value 8r) consisting of eight unit resistors R connected in series between three.
)) Resistance circuit is configured. For example, if the resistance value r of one unit resistor R is r = 80Ω, a chip resistor 10 to which the first connection electrode 12 and the second connection electrode 13 are connected is configured by a resistance circuit of 8r = 640Ω. Has been done.

A fuse film F is connected in parallel to each of the plurality of types of resistance circuits other than the reference resistance circuit R8, and the plurality of types of resistance circuits are short-circuited by each fuse film F. That is, the reference resistance circuit R8 has 13 resistance circuits R64 to R / 3 of 12 types.
Although 2 are connected in series, each resistance circuit is short-circuited by a fuse film F connected in parallel. Therefore, from an electrical point of view, each resistance circuit should be incorporated into the resistance network 14. Not in.

The chip resistor 10 according to this embodiment selectively blows the fuse film F with, for example, laser light, according to the required resistance value. As a result, the resistance circuit in which the fuse film F connected in parallel is blown is incorporated into the resistance network 14. Therefore, the entire resistance value of the resistance network 14 can be set to a resistance network having a resistance value in which resistance circuits corresponding to the blown fuse film F are connected in series and incorporated.

In other words, the chip resistor 10 according to this embodiment selectively blows a fuse film provided corresponding to a plurality of types of resistance circuits, thereby causing a plurality of types of resistance circuits (for example, for example).
When F1, F4, and F13 are blown, the resistance circuits R64, R32, and R1 are connected in series) can be incorporated into the resistance network. Since the resistance value of each of the plurality of types of resistance circuits is determined, the resistance value of the resistance network 14 is digitally adjusted to obtain the chip resistor 10 having the required resistance value. Can be done.

Further, in a plurality of types of resistance circuits, one unit resistor R having the same resistance value is provided in series, and two.
Multiple types of series resistance circuits connected by increasing the number of unit resistors R in geometric progression, such as 4, 4, 16, 32, and 64, and unit resistors with equal resistance values. It is provided with a plurality of types of parallel resistance circuits in which the body R is connected in parallel with 2, 4, 8, 16, and 32 units, and the number of unit resistors R is increased in a geometric progression. .. Then, these are connected in series in a state of being short-circuited by the fuse film F. Therefore, by selectively blowing the fuse film F, the resistance value of the entire resistance network 14 can be set to an arbitrary resistance value in a wide range from a small resistance value to a large resistance value.

FIG. 8 is a plan view of the chip resistor 30 according to another embodiment of the first invention, and shows the arrangement relationship of the first connection electrode 12, the second connection electrode 13, and the resistance network 14 and the plane of the resistance network 14. The visual composition is shown.
The difference between the chip resistor 30 and the chip resistor 10 described above is the connection mode of the unit resistor R in the resistance network 14.

That is, in the resistance network 14 of the chip resistor 30, a large number of unit resistors R having equal resistance values arranged in a matrix on a silicon substrate (in the configuration of FIG. 8, the row direction (longitudinal length of the silicon substrate). Eight unit resistors R are arranged along the direction), 44 unit resistors R are arranged along the row direction (width direction of the silicon substrate), and a total of 352 unit resistors R are included. )have. Then, a predetermined number of 1 to 128 of these a large number of unit resistors R are electrically connected to form a plurality of types of resistance circuits. The formed plurality of types of resistance circuits are connected in parallel by a conductor film and a fuse film F as network connection means. The plurality of fuse films F are arranged along the inner side of the second connection electrode 13 so that the arrangement region is linear, and when the fuse film F is blown, the resistance circuit connected to the fuse film is formed. It is configured to be electrically separated from the resistance network 14.

The structures of a large number of unit resistors R constituting the resistance network 14, the connecting conductor film, and the fuse film F are the same as the structures of the corresponding portions in the chip resistor 10 described above. Therefore, the description here will be omitted.
FIG. 9 illustrates the connection modes of a plurality of types of resistance circuits in the resistance network shown in FIG. 8, the arrangement relationship of the fuse film F connecting them, and the connection relationship of the plurality of types of resistance circuits connected to the fuse film F. It is a figure which shows.

With reference to FIG. 9, the first connection electrode 12 has a reference resistance circuit R / included in the resistance network 14.
One end of 16 is connected. The reference resistance circuit R / 16 is composed of 16 unit resistors R connected in parallel, and the other end is connected to a connecting conductor film C to which the remaining resistance circuits are connected.
One end and the other end of a resistance circuit R128 composed of 128 unit resistors R connected in series are connected to the fuse film F1 and the connecting conductor film C.

One end and the other end of a resistance circuit R64 composed of a series connection of 64 unit resistors R are connected to the fuse film F5 and the connecting conductor film C.
One end and the other end of a resistance circuit R32 composed of a series connection of 32 unit resistors R are connected to the fuse film F6 and the connecting conductor film C.
One end and the other end of a resistance circuit R16 formed by connecting 16 unit resistors R in series are connected to the fuse film F7 and the connecting conductor film C.

One end and the other end of a resistance circuit R8 composed of eight unit resistors R connected in series are connected to the fuse film F8 and the connecting conductor film C.
One end and the other end of a resistance circuit R4 composed of a series connection of four unit resistors R are connected to the fuse film F9 and the connecting conductor film C.
One end and the other end of a resistance circuit R2 formed by connecting two unit resistors R in series are connected to the fuse film F10 and the connecting conductor film C.

One end and the other end of a resistance circuit R1 formed by connecting one unit resistor R in series are connected to the fuse film F11 and the connecting conductor film C.
One end and the other end of a resistance circuit R / 2, which is a parallel connection of two unit resistors R, are connected to the fuse film F12 and the connecting conductor film C.
One end and the other end of a resistance circuit R / 4 composed of four unit resistors R connected in parallel are connected to the fuse film F13 and the connecting conductor film C.

The fuse films F14, F15, and F16 are electrically connected, and these fuse films F1
4, F15, F16 and the connecting conductor C are connected to one end and the other end of a resistance circuit R / 8 composed of eight unit resistors R connected in parallel.
The fuse films F17, F18, F19, F20, and F21 are electrically connected, and the fuse films F17 to F21 and the connecting conductor film C are connected to a resistance circuit composed of 16 unit resistors R connected in parallel. One end and the other end of R / 16 are connected.

The fuse film F is provided with 21 fuse films F1 to F21, all of which are second.
It is connected to the connection electrode 13.
With this configuration, when any fuse film F to which one end of the resistance circuit is connected is blown, the resistance circuit to which one end is connected to the fuse film F is electrically disconnected from the resistance network 14. ..

The configuration of FIG. 9, that is, the configuration of the resistance network 14 provided in the chip resistor 30, is shown in an electric circuit diagram as shown in FIG. In a state where all the fuse films F are not blown, the resistance network 14 has a reference resistance circuit R / 16 between the first connection electrode 14 and the second connection electrode 13.
And 12 types of resistance circuits R / 16, R / 8, R / 4, R / 2, R1, R2, R4, R8,
It constitutes a series connection circuit with the parallel connection circuit of R16, R32, R64, and R128.

A fuse film F is connected in series to each of the 12 types of resistance circuits other than the reference resistance circuit R / 16. Therefore, in the chip resistor 30 having the resistance network 14, if the fuse film F is selectively blown by, for example, laser light according to the required resistance value, the resistance corresponding to the blown fuse film F is obtained. The circuit (resistor circuit in which the fuse film F is connected in series) is electrically separated from the resistance network 14, and the resistance value of the chip resistor 30 can be adjusted.

In other words, the chip resistor 30 according to this embodiment also electrically blows a plurality of types of resistance circuits from the resistance network by selectively blowing a fuse film provided corresponding to the plurality of types of resistance circuits. Can be separated into. Since the resistance value of each of the plurality of types of resistance circuits is determined, the resistance value of the resistance network 14 is digitally adjusted to obtain the chip resistor 30 having the required resistance value. Can be done.

Further, in a plurality of types of resistance circuits, one unit resistor R having the same resistance value is provided in series, and two.
Unit resistor R in geometric progression with 1, 4, 8, 16, 32, 64 and 128
Multiple types of series resistance circuits connected by increasing the number of resistors and unit resistors R with the same resistance value are in parallel, 2, 4, 8, 16 and so on. It is equipped with multiple types of parallel resistance circuits that are connected in an increased number. Therefore, by selectively blowing the fuse film F, the resistance value of the entire resistance network 14 can be finely and digitally set to an arbitrary resistance value.

In the electric circuit shown in FIG. 10, an overcurrent tends to flow in the reference resistance circuit R / 16 and the resistance circuit having a small resistance value among the resistance circuits connected in parallel, and the resistance is set when the resistance is set. The rated current that can be passed through the circuit must be designed to be large.
Therefore, in order to disperse the current, the connection structure of the resistance network may be changed so that the electric circuit shown in FIG. 10 has the electric circuit configuration shown in FIG. 11A. That is, the reference resistance circuit R
The resistance circuit that eliminates / 16 and is connected in parallel is changed to a circuit that includes a configuration 140 in which a plurality of sets of resistance unit bodies R1 having a resistance value r are connected in parallel, with the minimum resistance value being r.

FIG. 11B is an electric circuit diagram showing a specific resistance value, and is a circuit including a configuration 140 in which a plurality of sets of 80Ω unit resistors and fuse film F are connected in series in parallel. Thereby, the flowing current can be dispersed.
FIG. 12 is a diagram showing a circuit configuration of a resistance network 14 provided in a chip resistor according to still another embodiment of the first invention in an electric circuit diagram. The feature of the resistance network 14 shown in FIG. 12 is
The circuit configuration is such that a series connection of a plurality of types of resistance circuits and a parallel connection of a plurality of types of resistance circuits are connected in series.

Similar to the previous embodiment, the fuse film F is connected in parallel to each of the plurality of types of resistance circuits connected in series, and the plurality of types of resistance circuits connected in series are all fuse films. F is short-circuited. Therefore, when the fuse film F is blown, the resistance circuit short-circuited by the fuse film F is electrically incorporated into the resistance network 14.
On the other hand, a fuse film F is connected in series to each of a plurality of types of resistance circuits connected in parallel. Therefore, by blowing the fuse film F, the resistance circuit to which the fuse film F is connected in series can be electrically disconnected from the parallel connection of the resistance circuits.

With such a configuration, for example, a small resistor of 1 kΩ or less can be made on the parallel connection side, and a resistance circuit of 1 kΩ or more can be made on the series connection side. Therefore, a resistance circuit in a wide range from a small resistance of several Ω to a large resistance of several MΩ can be made by using the resistance network 14 configured with the same basic design.
If you want to set the resistance value more accurately, cut the fuse film of the resistance circuit on the series connection side close to the required resistance value in advance, and finely adjust the resistance value. This can be done by fusing, and the accuracy of fitting to the desired resistance value is improved.

FIG. 13 is an electric circuit diagram showing a specific configuration example of the resistance network 14 in a chip resistor having a resistance value of 10Ω to 1MΩ.
In the resistance network 14 shown in FIG. 13, a series connection of a plurality of types of resistance circuits short-circuited by the fuse film F and a parallel connection of a plurality of types of resistance circuits in which the fuse film F is connected in series are connected in series. It has a circuit configuration.

According to the resistance circuit of FIG. 13, an arbitrary resistance value of 10 to 1 kΩ can be set within an accuracy of 1% on the parallel connection side. Also, in the circuit on the series connection side, an arbitrary resistance value of 1k to 1MΩ can be used.
The accuracy can be set within 1%. When using a circuit on the series connection side, there is an advantage that the resistance value can be set more accurately by blowing the fuse film F of the resistance circuit close to the desired resistance value in advance and adjusting it to the desired resistance value. There is.

Although the fuse film F has been described only when the same layer as the connecting conductor film C is used, the connecting conductive film C portion is formed by laminating another conductor film on the fuse film F. The resistance value may be lowered. Further, the resistor film may be eliminated and only the connecting conductor film C may be used. Even in this case, if the conductor film is not laminated on the fuse film F, the fusing property of the fuse film F does not deteriorate.

14A and 14B are schematic plan views for explaining the main structure of the chip resistor 90 according to still another embodiment of the first invention.
For example, the above-mentioned chip resistor 10 (see FIGS. 1 and 2) and the chip resistor 30 (see FIG. 8).
In (see), the relationship between the resistor film line 20 and the conductor film piece 21 constituting the resistance circuit is shown in FIG. 14A in a plan view. That is, as shown in FIG. 14A, the resistor film line 20 portion in the region of the predetermined interval R forms the unit resistor R having a constant resistance value r.
A conductor film piece 21 is laminated on both sides of the unit resistor R, and the resistor film line 20 is short-circuited by the conductor film piece 21.

Here, in the chip resistor 10 and the chip resistor 30 described above, the length of the resistor film line 20 portion forming the unit resistor R is, for example, 12 μm, and the resistor film line 2
The width of 0 is, for example, 1.5 μm, and the unit resistance (sheet resistance) is 10 Ω / □. Therefore, the resistance value r of the unit resistor R is r = 80Ω.
By the way, in the chip resistor 10 shown in FIGS. 1 and 2, for example, it is desired to increase the resistance value of the resistance network 14 without expanding the arrangement area of the resistance network 14 to increase the resistance of the chip resistor 10. There is a request such as.

Therefore, in the chip resistor 90 according to this embodiment, the layout of the resistance network 14 is changed, and the unit resistors constituting the resistance circuit included in the resistance network have the shape and shape shown in FIG. 14B in a plan view. I made it the size.
With reference to FIG. 14B, the resistor membrane line 20 includes a linear resistor membrane line 20 having a width of 1.5 μm and extending linearly. Then, in the resistor film line 20, the portion of the resistor film line 20 having a predetermined interval R'forms a unit resistor R'with a constant resistance value r'. The length of the unit resistor R'is set to, for example, 17 μm. In this way, the resistance value r'of the unit resistor R'can be made into a unit resistor of r'= 160Ω, which is almost twice as large as that of the unit resistor R shown in FIG. 14A.

Further, the length of the conductor film piece 21 laminated on the resistor film line 20 can be the same in both the one shown in FIG. 14A and the one shown in FIG. 14B. Therefore, the chip resistor 90 is formed by changing the layout pattern of each unit resistor R'that constitutes the resistance circuit included in the resistance network 14 so that the unit resistors R'can be connected in series. Is a high resistance.

FIG. 15A is a schematic cross-sectional view showing the main structure of the chip resistor 100 according to still another embodiment of the first invention, and FIG. 15B is a schematic view taken along the arrow B of FIG. 15A. It is a partial plan view.
First, referring to FIG. 15A, the chip resistor 100 has a silicon substrate 11 as a substrate, and an insulating layer (SiO ₂ ) 19 is formed on the upper surface of the silicon substrate 11. Insulation layer 19
The surface of is a circuit forming surface. In the chip resistor 100, the insulating layer 1 which is a circuit forming surface
Trench 10 dug from the surface of 9 toward the silicon substrate 11 to a predetermined depth.
1 is formed by dry etching or the like, and the inner wall surface and bottom surface of the trench 101 are covered with an insulating film 102 _{of SiO 2 by, for example, thermal oxidation.} The insulating film 102 is connected to and integrated with the insulating layer 19 formed on the upper surface of the silicon substrate 11.

A resistor film 103 is formed on the insulating layer 19 on the upper surface of the silicon substrate 11 and the insulating film 102 in the trench 101. The resistor film 103 is TiN, TiON or TiSiON.
Is formed by.
The resistor film 103 is provided on the insulating film 102 along the inner wall surface and the bottom surface of the trench 101 so as to cross each trench 101.

With reference to FIG. 15B, the trench 101 extends longitudinally in the plane direction of the silicon substrate 11, and a plurality of trenches 101 are formed in a straight line at equal intervals in parallel. The resistor film 103 formed on the insulating film 102 extends along the inner wall surface of the trench 101 so as to cross the upper surface of the insulating layer 19 and the trench 101 in order. Further, the resistor film 103 extends in a direction orthogonal to the length direction of the trench 101. The resistor film 103 is a plurality of resistor films extending in parallel (hereinafter referred to as “resistor film lines”), and includes a plurality of resistor film lines 103 extending in parallel.

An aluminum film as the conductor film piece 21 is laminated on the resistor film line 103 of the portion arranged on the insulating layer 19. In the portion of the resistor film 103 where the conductor film pieces 21 are laminated, the resistance of the resistor film 103 is short-circuited by the conductor film piece 21.
Therefore, in the chip resistor 100 shown in FIGS. 15A and 15B, the resistor film line 103 portion extending along the inner wall surface and the bottom surface of the trench 101 forms the unit resistor R ”. The length of the resistor film line 103 forming the above can be set to a predetermined length by adjusting the depth of the trench 101 (for example, the depth of the trench 101 is several tens of μm).
It can be ~ 100 μm. ). Therefore, the resistance value of the unit resistor R "can be increased. As a result, the chip resistor 100 becomes a chip resistor with high resistance as a whole.

In this embodiment, the conductive film 21 is provided in order to improve the resistance value accuracy, but when giving priority to increasing the resistance, the conductive film 21 may not be provided.
According to the first invention, in the chip resistor with high resistance described above, it is also possible to obtain a higher resistance chip resistor made by appropriately combining the configurations for increasing the resistance.
FIG. 16 is a diagram showing a circuit configuration of a discrete component 1 in which another circuit is incorporated in the above-mentioned chip resistor.

The discrete component 1 is, for example, a diode 55 and a resistance circuit 14 connected in series. The discrete component 1 is a chip-type discrete component including a diode 55. The first invention can be applied not only to the chip type as in this example but also as a discrete component having the resistance circuit 14 described above.
The first invention is not limited to the embodiments described above, and various design changes can be made within the scope of the matters described in the claims. For example, instead of a trench, a letterpress pattern is formed on the substrate, and a resistor film is formed along the surface thereof.
The length of the resistor film may be increased to increase the resistance.
[2] Second Invention The second invention has the following features.

A1. A substrate having a circuit forming surface, a first connection electrode and a second connection electrode formed on the substrate, formed on the substrate, one end side is connected to the first connection electrode, and the other end side is the second connection electrode. The resistance network includes a resistance network connected to a connection electrode, and the resistance network is formed on a first resistance circuit composed of a first resistor film formed on the substrate and the first resistance circuit. It includes a second resistance circuit composed of a second resistor film laminated and formed via an interlayer insulating film, and a connection circuit for connecting the first resistance circuit and the second resistance circuit in series. Further, it is characterized by including a fuse film that can be blown in order to electrically incorporate an arbitrary resistance circuit included in the resistance network into the resistance network or electrically separate it from the resistance network. , Chip resistor.

A2. The chip resistor according to "A1.", wherein the first resistor film and the second resistor film have a constant width and include a linear resistor film line. vessel.
A3. The chip resistor according to "A1." Or "A2.", wherein the first resistance circuit and the second resistance circuit are formed in the same layout pattern in a plan view.

A4. At least one of the first resistance circuit and the second resistance circuit includes a plurality of conductor film pieces laminated on the resistor film line at regular intervals in the line direction, and the conductor film pieces are laminated. The chip resistor according to "A2.", wherein the resistor film line portions of the non-stacked portions at regular intervals form one unit resistor.
A5. The first resistance circuit includes the plurality of conductor film pieces, and the fuse film is formed on the same layer as the laminated layer of the conductor film pieces with the same material as the conductor film pieces. The chip resistor according to "A4.".

A6. The chip resistor according to any one of "A1." To "A5.", wherein the resistance network includes a plurality of types of resistance circuits having different resistance values from each other.
A7. The fuse film is capable of being blown in order to selectively incorporate a plurality of types of resistance circuits included in the resistance network into the resistance network or to electrically separate them from the resistance network. The chip resistor according to "A6."

A8. The first resistance circuit has a plurality of unit resistors formed of the first resistor film, and has a plurality of unit resistors.
The second resistance circuit has a plurality of unit resistors formed of the second resistor film, and the first resistance circuit has a plurality of unit resistors.
The chip resistor according to "A1.", wherein each unit resistor included in the second resistance circuit is connected in series to each unit resistor included in the resistance circuit by the connection circuit. vessel.

A9. The first resistor film and the second resistor film are TiN, TiON or TiSiON.
The chip resistor according to any one of "A1." To "A8.", Which is characterized by being formed of.
A10. A substrate having an element forming surface, a first resistor film formed on the element forming surface, an interlayer insulating film covering the first resistor film, and a second resistor film formed on the interlayer insulating film. And a via for connecting the first resistor film and the second resistor film in series, and a pair of external surfaces arranged on the element forming surface and connected to the first resistor film or the second resistor film. A chip resistor characterized by including a connecting electrode.

A11. The first resistor film and the second resistor film have overlapping overlapping regions in a plan view overlooking the device forming surface, and in the overlapping regions, the vias cause both resistor films to be electrically connected to each other. The chip resistor according to "A10.", Which is connected to.
A12. The first resistor film and the second resistor film are TiN, TiON or TiS.
The chip resistor according to "A10." Or "A11.", Which is formed of iON.

A13. The chip resistor according to any one of "A10." To "A12.", wherein the first resistor film and the second resistor film are each patterned in a predetermined resistance circuit form. vessel.
A14. A substrate having a circuit forming surface, and a first connection electrode and a second connection electrode formed on the substrate.
The resistance network includes a connection electrode and a resistance network formed on the substrate, one end side of which is connected to the first connection electrode, and the other end side of which is connected to the second connection electrode. The resistance network is the substrate. A first resistance circuit formed on a circuit forming surface located between the first connection electrode and the second connection electrode, and a second resistance circuit formed under at least one of the first connection electrode and the second connection electrode. A chip resistor comprising a resistance circuit and a connection circuit for connecting the first resistance circuit and the second resistance circuit in series.

A15. A fuse film that can be blown to electrically incorporate any resistance circuit included in the resistance network into the resistance network or to electrically separate it from the resistance network is included. A14. ”.
A16. When the chip resistor is viewed in a plan view, the area of the region where the resistance network is formed and the area of the region where the first connection electrode and the second connection electrode or the pair of external connection electrodes are arranged. "A1." To "A15."
The chip resistor described in any of.

According to the invention described in "A1.", The resistance network includes a first resistance circuit and a second resistance circuit laminated and formed via an interlayer insulating film, and the chip resistor is miniaturized and has high resistance. Can be achieved.
In addition, the resistance of the resistance network is obtained by blowing an arbitrary fuse film of a plurality of fuse films and electrically incorporating an arbitrary resistance circuit into the resistance network or electrically separating it from the resistance network. The value can be adjusted, and the resistance value of the chip resistor can be matched to a plurality of types of required resistance values without changing the basic design. Thereby, it is possible to provide a chip resistor having the same basic design and having the resistance value as the required resistance value. Moreover, even when the required resistance value is high resistance, it can be suitably dealt with.

In the invention described in "A2.", The resistance of the first resistance circuit and the second resistance circuit can be increased by using the resistor film line.
According to the invention described in "A3.", The design of the first resistance circuit of the first layer and the design of the second resistance circuit of the second layer can be the same design. Therefore, it is possible to obtain a chip resistor having a high resistance, which is easy to design a circuit and easy to manufacture.

According to the invention described in "A4.", It is possible to obtain a high resistance chip resistor in which the resistance value can be set accurately and the resistance value can be easily adjusted.
According to the invention described in "A5.", It is easy to manufacture, and a plurality of types of metal films (conductor films) can be easily formed at one time by a relatively small number of processes.
According to the invention described in "A6.", It is possible to obtain a high resistance chip resistor whose resistance value can be easily adjusted.

According to the invention described in "A7.", Similar to the invention described in "A6.", It is possible to obtain a high resistance chip resistor whose resistance value can be easily adjusted.
According to the invention described in "A8.", It is possible to provide a chip resistor having a high resistance.
According to the invention described in "A9.", It is possible to provide a chip resistor capable of forming a resistor film satisfactorily.

According to the invention described in "A10.", It is possible to provide a chip resistor capable of achieving both miniaturization and high resistance.
According to the invention described in "A11.", The first resistor film and the second resistor film can be made into a chip resistor that can be easily connected in series by using a via.
According to the invention described in "A12.", It is possible to obtain a chip resistor capable of forming a resistor film satisfactorily.

According to the invention described in "A13.", The first resistor film and the second resistor film can be patterned suitable for each resistance circuit, and a chip resistor having a desired high resistance value can be obtained. Can be provided.
According to the invention described in "A14.", It is possible to provide a chip resistor having a high resistance by utilizing the lower part of the external electrode, which has not been the object of arrangement of the resistance circuit in the past.

According to the invention described in "A15.", It is possible to obtain a chip resistor capable of forming a resistor film satisfactorily.
According to the invention described in "A16.", It is possible to provide an extremely small chip resistor having a high resistance.
Embodiments of the second invention will be described in detail with reference to the accompanying drawings.

FIG. 18A is a schematic perspective view showing an external configuration of the chip resistor 210 according to the embodiment of the second invention, and FIG. 18B is a side view showing a state in which the chip resistor 210 is mounted on a substrate. Is.
With reference to FIG. 18A, the chip resistor 210 according to the embodiment of the second invention is the substrate 211.
The first connection electrode 212 formed above, the second connection electrode 213, and the resistance network 214 are provided. The substrate 211 has a rectangular parallelepiped shape that is substantially rectangular in a plan view. As an example, the substrate 211 has a length L = 0.3 mm in the long side direction, a width W = 0.15 mm in the short side direction, and a thickness T = 0.1 mm. It is a minute chip of. The substrate 211 can be made of, for example, silicon, glass, ceramic, or the like. In the following embodiment, the case where the substrate 211 is a silicon substrate will be described as an example.

As shown in FIG. 37, in the chip resistor 210, a large number of chip resistors 210 are formed in a grid pattern on a wafer Wa (a semiconductor wafer such as a silicon wafer, or a conductor wafer or a non-conductive wafer). It is obtained by cutting the wafer Wa and separating it into individual chip resistors 210.
On the silicon substrate 211, the first connection electrode 212 is a rectangular electrode provided along one short side 311 of the silicon substrate 211 and long in the short side 311 direction. Second connection electrode 213
Is a rectangular electrode provided along the other short side 312 on the silicon substrate 211 and long in the short side 312 direction. The resistance network 214 is provided in a central region (circuit forming surface or element forming surface) sandwiched between the first connection electrode 212 and the second connection electrode 213 on the silicon substrate 211. One end side of the resistance network 214 is electrically connected to the first connection electrode 212, and the other end side of the resistance network 214 is electrically connected to the second connection electrode 213. The first connection electrode 212, the second connection electrode 213, and the resistance network 214 can be provided, for example, on the silicon substrate 211 by using a semiconductor manufacturing process.

The first connection electrode 212 and the second connection electrode 213 function as external connection electrodes, respectively. In the state where the chip resistor 210 is mounted on the circuit board 215, as shown in FIG. 18B, the first connection electrode 212 and the second connection electrode 213 are respectively the circuit board 215.
(Not shown) and solder 216 are electrically and mechanically connected. The first connection electrode 212 and the second connection electrode 213 that function as external connection electrodes are formed of gold (Au) or gold-plated on the surface in order to improve solder wettability and reliability. Is desirable.

FIG. 19 is a plan view of the chip resistor 210, which is a first connection electrode 212 and a second connection electrode 2.
13 and the arrangement relationship of the resistance network 214 and the configuration (layout pattern) of the resistance network 214 in a plan view are shown.
With reference to FIG. 19, the chip resistor 210 includes a first connection electrode 212 having a substantially rectangular shape in a plan view arranged along one short side 311 of the upper surface of the silicon substrate and the other short side of the upper surface of the silicon substrate. A resistance network provided in a region of a rectangular shape in a plan view between a second connection electrode 213 having a substantially rectangular shape in a plan view arranged along a side 312 along a long side and a rectangular shape in a plan view between the first connection electrode 212 and the second connection electrode 213. Includes 214 and.

The resistance network 214 includes a large number of unit resistors R having equal resistance values arranged in a matrix on the silicon substrate 211 (in the example of FIG. 19, along the row direction (longitudinal direction of the silicon substrate) 8). The unit resistors R are arranged and 4 along the row direction (width direction of the silicon substrate).
It has a configuration in which four unit resistors R are arranged and includes a total of 352 unit resistors R). Then, a predetermined number of 1 to 64 of these large number of unit resistors R are electrically connected to form a plurality of types of resistance circuits according to the number of connected unit resistors R. The formed plurality of types of resistance circuits are connected in a predetermined manner by a conductor film C (wiring film formed of a conductor).

Further, the resistance circuit may be electrically incorporated into the resistance network 214, or the resistance network 2 may be incorporated.
A plurality of fuse films F that can be blown are provided so as to be electrically separated from 14. The plurality of fuse films F are arranged along the inner side of the second connection electrode 213 so that the arrangement region is linear. More specifically, the plurality of fuse films F and the connecting conductor films C are arranged so as to be adjacent to each other, and the arrangement directions thereof are linear.

FIG. 20A is an enlarged plan view of a part of the resistance network 214 shown in FIG.
20B and 20C are a longitudinal sectional view (cross-sectional view taken along the line BB of FIG. 20A) and a width direction drawn to explain the structure of the unit resistor R in the resistance network 214, respectively. It is a vertical cross-sectional view (cross-sectional view along the line CC of FIG. 20A).
The configuration of the unit resistor R will be described with reference to FIGS. 20A, 20B and 20C.

_{An insulating layer (SiO 2} ) 219 is formed on the upper surface of the silicon substrate 211 as a substrate, and a resistor film 220 is arranged on the insulating layer 219. The resistor film 220 includes TiN and TiON.
Or it is formed by TiSiON. The resistor film 220 is a plurality of resistor films (hereinafter referred to as “resistor film lines”) extending linearly in parallel between the first connection electrode 212 and the second connection electrode 213, and is a resistor. The body membrane line 220 may be cut at a predetermined position in the line direction. An aluminum film as a conductor film piece 221 is laminated on the resistor film line 220. Each conductor film piece 221 is laminated on the resistor film line 220 at regular intervals R in the line direction.

The electrical characteristics of the resistor film line 220 and the conductor film piece 221 having this configuration are shown by circuit symbols as shown in FIGS. 21A to 21C. That is, as shown in FIG. 21A, the resistor film line 220 portions in the region of the predetermined interval R each form a unit resistor R having a constant resistance value r. The region where the conductor film pieces 221 are laminated is the resistor film line 22 at the conductor film piece 221.
0 is short-circuited. Therefore, a resistance circuit is formed in which the unit resistor R of the resistor r shown in FIG. 21B is connected in series.

Further, the adjacent resistor film lines 220 are connected to each other with the resistor film line 220 and the conductor film piece 22.
Since they are connected by 1, the resistance network shown in FIG. 20A constitutes the resistance circuit shown in FIG. 21C.
Here, an example of the manufacturing process of the resistance network 214 will be briefly described. (1) The surface of the silicon substrate 211 is thermally oxidized to form a _{silicon dioxide (SiO 2) layer as an insulating layer 219.} (2) Then, a resistance film 220 of TiN, TiON or TiSiON is formed on the entire surface of the insulating layer 219 by sputtering. (3) Further, the conductor film 221 of aluminum (Al) is laminated on the resistor film 220 by sputtering. (4) After that, the conductor film 221 is used by a photolithography process, for example, by dry etching.
And the resistor film 220 is selectively removed, and as shown in FIG. 20A, the resistor film line 220 and the conductor film 221 having a constant width extending in the row direction are arranged in the column direction at regular intervals in a plan view. Get the configuration. At this time, a region in which the resistor film line 220 and the conductor film 221 are partially cut is also formed. (5) Subsequently, the conductor film 221 laminated on the resistor film line 220 is selectively removed. As a result, a structure is obtained in which the conductor film pieces 221 are laminated on the resistor film line 220 at regular intervals R. (6) After that, the SiN film 22 as a protective film
2 is deposited, and a polyimide layer 223, which is a protective layer, is further laminated on it.

In this embodiment, the unit resistors R included in the resistance network 214 formed on the silicon substrate 211 are laminated on the resistor film line 220 and the resistor film line 220 at regular intervals in the line direction. A resistor film line 220 at a fixed interval R portion including the plurality of conductor film pieces 221 and the conductor film pieces 221 are not laminated constitutes one unit resistor R. The resistor film lines 220 constituting the unit resistor R are all the same in shape and size. Therefore, based on the characteristic that the resistors films of the same shape and the same size formed on the substrate have almost the same value, a large number of unit resistors R arranged in a matrix on the silicon substrate 211 have the same resistance value. have.

The conductor film piece 221 laminated on the resistor film line 220 forms a unit resistor R and also serves as a connecting conductor film for connecting a plurality of unit resistors R to form a resistance circuit. I'm playing.
22A is a partially enlarged plan view of a region including the fuse film F drawn by enlarging a part of the plan view of the chip resistor 210 shown in FIG. 19, and FIG. 22B is a cross section taken along the line BB of FIG. 22A. It is a figure which shows the structure.

As shown in FIGS. 22A and 22B, the fuse film F is also formed of the conductor film 221 laminated on the resistor film 220. That is, it is formed of aluminum (Al), which is the same metal material as the conductor film piece 221, on the same layer as the conductor film piece 221 laminated on the resistor film line 220 forming the unit resistor R. As described above, the conductor film piece 221 is also used as a connecting conductor film C for electrically connecting a plurality of unit resistors R in order to form a resistance circuit.

That is, in the same layer laminated on the resistor film 220, the conductor film for forming the unit resistor R, the connecting conductor film for forming the resistance circuit, and the connecting conductor film for forming the resistance network 214. , The fuse film, and the conductor film for connecting the resistor network 214 to the first connection electrode 212 and the second connection electrode 213 are the same manufacturing process (eg sputtering and photo) using the same metal material (eg aluminum). Lithography process)
Is formed by. This simplifies the manufacturing process of the chip resistor 210, and various conductor films can be formed at the same time by using a common mask. Further, the alignment with the resistor film 220 is also improved.

FIG. 23 shows the arrangement relationship of the connecting conductor film C and the fuse film F connecting the plurality of types of resistance circuits in the resistance circuit network 214 shown in FIG. 19, and the plurality connected to the connecting conductor film C and the fuse film F. It is a figure which shows the connection relation with the kind of resistance circuit graphically.
With reference to FIG. 23, one end of the reference resistance circuit R8 included in the resistance network 214 is connected to the first connection electrode 212. The reference resistance circuit R8 is composed of eight unit resistors R connected in series, and the other ends are connected to the fuse film F1.

One end and the other end of a resistance circuit R64 composed of a series connection of 64 unit resistors R are connected to the fuse film F1 and the connecting conductor film C2.
One end and the other end of a resistance circuit R32 composed of a series connection of 32 unit resistors R are connected to the connecting conductor film C2 and the fuse film F4.
One end and the other end of a resistance circuit body R32 composed of a series connection of 32 unit resistors R are connected to the fuse film F4 and the connection conductor film C5.

One end and the other end of a resistance circuit R16 formed by connecting 16 unit resistors R in series are connected to the connecting conductor film C5 and the fuse film F6.
One end and the other end of a resistance circuit R8 composed of eight unit resistors R connected in series are connected to the fuse film F7 and the connecting conductor film C9.
One end and the other end of a resistance circuit R4 composed of a series connection of four unit resistors R are connected to the connecting conductor film C9 and the fuse film F10.

One end and the other end of a resistance circuit R2 composed of a series connection of two unit resistors R are connected to the fuse film F11 and the connecting conductor film C12.
One end and the other end of a resistance circuit body R1 composed of one unit resistor R are connected to the connecting conductor film C12 and the fuse film F13.
One end and the other end of a resistance circuit R / 2 composed of two unit resistors R connected in parallel are connected to the fuse film F13 and the connecting conductor film C15.

One end and the other end of a resistance circuit R / 4 composed of four unit resistors R connected in parallel are connected to the connecting conductor film C15 and the fuse film F16.
One end and the other end of a resistance circuit R / 8 composed of eight unit resistors R connected in parallel are connected to the fuse film F16 and the connecting conductor film C18.
One end and the other end of a resistance circuit R / 16 composed of parallel connections of 16 unit resistors R are connected to the connecting conductor film C18 and the fuse film F19.

A resistor circuit R / 32 composed of 32 unit resistors R connected in parallel is connected to the fuse film F19 and the connecting conductor film C22.
The plurality of fuse films F and the connecting conductor film C are a fuse film F1, a connecting conductor film C2, a fuse film F3, a fuse film F4, a connecting conductor film C5, a fuse film F6, a fuse film F7, and a connecting conductor, respectively. Film C8, connecting conductor film C9, fuse film F10, fuse film F11
, Connection conductor film C12, fuse film F13, fuse film F14, connection conductor film C15, fuse film F16, fuse film F17, connection conductor film C18, fuse film F19, fuse film F20, connection conductor film C21, connection The conductor film C22 is arranged in a straight line and connected in series. When each fuse film F is blown, the electrical connection between the fuse film F and the connecting conductor film C adjacent to the fuse film F is cut off.

This configuration is shown in FIG. 24 in an electric circuit diagram. That is, all fuse films F
In the state where is not blown, the resistance network 214 is a reference resistance circuit R8 (resistance value 8r) composed of eight unit resistors R provided in series between the first connection electrode 212 and the second connection electrode 213. )) Resistance circuit is configured. For example, the resistance value r of one unit resistor R is r =
If it is 80Ω, a chip resistor 210 to which the first connection electrode 212 and the second connection electrode 213 are connected is configured by a resistance circuit of 8r = 640Ω.

A fuse film F is connected in parallel to each of the plurality of types of resistance circuits other than the reference resistance circuit R8, and the plurality of types of resistance circuits are short-circuited by each fuse film F. That is, the reference resistance circuit R8 has 13 resistance circuits R64 to R / 3 of 12 types.
Although 2 are connected in series, each resistance circuit is short-circuited by a fuse film F connected in parallel. Therefore, from an electrical point of view, each resistance circuit should not be incorporated in the resistance network 214. Not in.

The chip resistor 210 according to this embodiment has a fuse film F according to a required resistance value.
Is selectively blown by, for example, laser light. As a result, the resistance circuit in which the fuse film F connected in parallel is blown is incorporated into the resistance network 214. Therefore, the entire resistance value of the resistance network 214 can be set to a resistance network having a resistance value in which resistance circuits corresponding to the blown fuse film F are connected in series and incorporated.

In other words, the chip resistor 210 according to this embodiment selectively blows a fuse film provided corresponding to a plurality of types of resistance circuits, thereby causing a plurality of types of resistance circuits (for example, F1, F4, etc.). When F13 is blown, the resistor circuits R64, R32, and R1 are connected in series) can be incorporated into the resistor network. Since the resistance value of each of the plurality of types of resistance circuits is determined, the resistance value of the resistance network 214 is digitally adjusted to obtain the chip resistor 210 having the required resistance value. Can be done.

Further, in a plurality of types of resistance circuits, one unit resistor R having the same resistance value is provided in series, and two.
Multiple types of series resistance circuits connected by increasing the number of unit resistors R in geometric progression, such as 4, 4, 16, 32, and 64, and unit resistors with equal resistance values. It is provided with a plurality of types of parallel resistance circuits in which the body R is connected in parallel with 2, 4, 8, 16, and 32 units, and the number of unit resistors R is increased in a geometric progression. .. Then, these are connected in series in a state of being short-circuited by the fuse film F. Therefore, by selectively blowing the fuse film F, the resistance value of the entire resistance network 214 can be set to an arbitrary resistance value in a wide range from a small resistance value to a large resistance value.

FIG. 25 is a plan view of the chip resistor 230 according to another embodiment of the second invention, and shows the arrangement relationship of the first connection electrode 212, the second connection electrode 213, and the resistance network 214, and the plane of the resistance network 214. The visual composition is shown.
The difference between the chip resistor 230 and the chip resistor 210 described above is that the resistance network 2
14 is a connection mode of the unit resistor R in 14.

That is, in the resistance network 214 of the chip resistor 230, a large number of unit resistors R having equal resistance values arranged in a matrix on a silicon substrate (in the configuration of FIG. 25, the row direction (longitudinal length of the silicon substrate). Eight unit resistors R are arranged along the direction), 44 unit resistors R are arranged along the row direction (width direction of the silicon substrate), and a total of 352 unit resistors R are included. )have. Then, a predetermined number of 1 to 128 of these a large number of unit resistors R are electrically connected to form a plurality of types of resistance circuits. The formed plurality of types of resistance circuits are connected in parallel by a conductor film and a fuse film F as network connection means. The plurality of fuse films F are arranged along the inner side of the second connection electrode 213 so that the arrangement region is linear, and when the fuse film F is blown, the resistance circuit connected to the fuse film is formed. It is configured to be electrically separated from the resistance network 214.

The structure of a large number of unit resistors R constituting the resistance network 214, the structure of the connecting conductor film, and the structure of the fuse film F are the same as the structures of the corresponding portions in the chip resistor 210 described above. Therefore, the description here will be omitted.
FIG. 26 illustrates the connection modes of a plurality of types of resistance circuits in the resistance network shown in FIG. 25, the arrangement relationship of the fuse film F connecting them, and the connection relationship of the plurality of types of resistance circuits connected to the fuse film F. It is a figure which shows.

With reference to FIG. 26, one end of the reference resistance circuit R / 16 included in the resistance network 214 is connected to the first connection electrode 212. The reference resistance circuit R / 16 is composed of 16 unit resistors R connected in parallel, and the other end is connected to a connecting conductor film C to which the remaining resistance circuits are connected.
One end and the other end of a resistance circuit R128 composed of 128 unit resistors R connected in series are connected to the fuse film F1 and the connecting conductor film C.

One end and the other end of a resistance circuit R64 composed of a series connection of 64 unit resistors R are connected to the fuse film F5 and the connecting conductor film C.
One end and the other end of a resistance circuit R32 composed of a series connection of 32 unit resistors R are connected to the fuse film F6 and the connecting conductor film C.
One end and the other end of a resistance circuit R16 formed by connecting 16 unit resistors R in series are connected to the fuse film F7 and the connecting conductor film C.

One end and the other end of a resistance circuit R8 composed of eight unit resistors R connected in series are connected to the fuse film F8 and the connecting conductor film C.
One end and the other end of a resistance circuit R4 composed of a series connection of four unit resistors R are connected to the fuse film F9 and the connecting conductor film C.
One end and the other end of a resistance circuit R2 formed by connecting two unit resistors R in series are connected to the fuse film F10 and the connecting conductor film C.

One end and the other end of a resistance circuit R1 formed by connecting one unit resistor R in series are connected to the fuse film F11 and the connecting conductor film C.
One end and the other end of a resistance circuit R / 2, which is a parallel connection of two unit resistors R, are connected to the fuse film F12 and the connecting conductor film C.
One end and the other end of a resistance circuit R / 4 composed of four unit resistors R connected in parallel are connected to the fuse film F13 and the connecting conductor film C.

The fuse films F14, F15, and F16 are electrically connected, and these fuse films F1
4, F15, F16 and the connecting conductor C are connected to one end and the other end of a resistance circuit R / 8 composed of eight unit resistors R connected in parallel.
The fuse films F17, F18, F19, F20, and F21 are electrically connected, and the fuse films F17 to F21 and the connecting conductor film C are connected to a resistance circuit composed of 16 unit resistors R connected in parallel. One end and the other end of R / 16 are connected.

The fuse film F is provided with 21 fuse films F1 to F21, all of which are second.
It is connected to the connection electrode 213.
With this configuration, when any fuse film F to which one end of the resistance circuit is connected is blown, the resistance circuit to which one end is connected to the fuse film F is electrically disconnected from the resistance network 214. ..

The configuration of FIG. 26, that is, the configuration of the resistance network 214 provided in the chip resistor 230,
It is as shown in FIG. 27 in the electric circuit diagram. In a state where all the fuse films F are not blown, the resistance network 214 has a reference resistance circuit R / 16 and 12 types of resistance circuits R / 16 between the first connection electrode 214 and the second connection electrode 213. R / 8, R / 4, R / 2, R1, R2,
It constitutes a series connection circuit with a parallel connection circuit of R4, R8, R16, R32, R64, and R128.

A fuse film F is connected in series to each of the 12 types of resistance circuits other than the reference resistance circuit R / 16. Therefore, the chip resistor 230 having this resistance network 214
Then, if the fuse film F is selectively blown by, for example, laser light according to the required resistance value, a resistance circuit corresponding to the blown fuse film F (a resistance circuit in which the fuse film F is connected in series). ) Is electrically separated from the resistance network 214, and the resistance value of the chip resistor 230 can be adjusted.

In other words, the chip resistor 230 according to this embodiment also electrically blows a plurality of types of resistance circuits from the resistance network by selectively blowing a fuse film provided corresponding to the plurality of types of resistance circuits. Can be separated into. Since the resistance value of each of the plurality of types of resistance circuits is determined, the resistance value of the resistance network 214 is adjusted digitally, so to speak.
The chip resistor 30 has the required resistance value.

Further, in a plurality of types of resistance circuits, one unit resistor R having the same resistance value is provided in series, and two.
Unit resistor R in geometric progression with 1, 4, 8, 16, 32, 64 and 128
Multiple types of series resistance circuits connected by increasing the number of resistors and unit resistors R with the same resistance value are in parallel, 2, 4, 8, 16 and so on. It is equipped with multiple types of parallel resistance circuits that are connected in an increased number. Therefore, by selectively blowing the fuse film F, the resistance value of the entire resistance network 214 can be finely and digitally set to an arbitrary resistance value.

In the electric circuit shown in FIG. 27, an overcurrent tends to flow in the reference resistance circuit R / 16 and the resistance circuit having a small resistance value among the resistance circuits connected in parallel, and the resistance is set when the resistance is set. The rated current that can be passed through the circuit must be designed to be large.
Therefore, in order to disperse the current, the connection structure of the resistance network may be changed so that the electric circuit shown in FIG. 27 has the electric circuit configuration shown in FIG. 28A. That is, the reference resistance circuit R
The resistance circuit that eliminates / 16 and is connected in parallel is changed to a circuit that includes a configuration 340 in which a plurality of sets of resistance units R1 having a resistance value r are connected in parallel, with the minimum resistance value being r.

FIG. 28B is an electric circuit diagram showing a specific resistance value, and is a circuit including a configuration 340 in which a plurality of sets of 80Ω unit resistors and fuse film F are connected in series in parallel. Thereby, the flowing current can be dispersed.
FIG. 29 is a diagram showing a circuit configuration of a resistance network 214 provided in a chip resistor according to still another embodiment of the present invention in an electric circuit diagram. The feature of the resistance network 214 shown in FIG. 29 is that the series connection of a plurality of types of resistance circuits and the parallel connection of a plurality of types of resistance circuits are connected in series.

Similar to the previous embodiment, the fuse film F is connected in parallel to each of the plurality of types of resistance circuits connected in series, and the plurality of types of resistance circuits connected in series are all fuse films. F is short-circuited. Therefore, when the fuse film F is blown, the resistance circuit short-circuited by the fuse film F is electrically incorporated into the resistance network 214.
On the other hand, a fuse film F is connected in series to each of a plurality of types of resistance circuits connected in parallel. Therefore, by blowing the fuse film F, the resistance circuit to which the fuse film F is connected in series can be electrically disconnected from the parallel connection of the resistance circuits.

With such a configuration, for example, a small resistor of 1 kΩ or less can be made on the parallel connection side, and a resistance circuit of 1 kΩ or more can be made on the series connection side. Therefore, a wide range of resistance circuits from a small resistance of several Ω to a large resistance of several MΩ can be made by using the resistance network 214 configured with the same basic design.
If you want to set the resistance value more accurately, cut the fuse film of the resistance circuit on the series connection side close to the required resistance value in advance, and finely adjust the resistance value. This can be done by fusing, and the accuracy of fitting to the desired resistance value is improved.

FIG. 30 is an electric circuit diagram showing a specific configuration example of the resistance network 214 in a chip resistor having a resistance value of 10Ω to 1MΩ.
In the resistance network 214 shown in FIG. 30, a series connection of a plurality of types of resistance circuits short-circuited by the fuse film F and a parallel connection of a plurality of types of resistance circuits in which the fuse film F is connected in series are connected in series. It has a circuit configuration.

According to the resistance circuit of FIG. 30, any resistance value of 10 to 1 kΩ can be set within an accuracy of 1% on the parallel connection side. Also, in the circuit on the series connection side, an arbitrary resistance value of 1k to 1MΩ can be used.
The accuracy can be set within 1%. When using a circuit on the series connection side, there is an advantage that the resistance value can be set more accurately by blowing the fuse film F of the resistance circuit close to the desired resistance value in advance and adjusting it to the desired resistance value. There is.

Although the fuse film F has been described only when the same layer as the connecting conductor film C is used, the connecting conductive film C portion is formed by laminating another conductor film on the fuse film F. The resistance value may be lowered. Even in this case, if the conductor film is not laminated on the fuse film F, the fusing property of the fuse film F does not deteriorate.
FIG. 31A is a schematic cross-sectional view showing the main structure of the chip resistor 260 according to still another embodiment of the second invention. 31B is a schematic plan view of FIG. 31A. FIG. 31C shows
It is a circuit diagram of the chip resistor 260 of FIG. 31A.

The feature of this chip resistor 260 is that the resistance network 214 has a two-layer structure of a first resistance circuit 261 and a second resistance circuit 262.
That is, the chip resistor 260 has, for example, a silicon substrate 211, an insulating layer (SiO ₂ ) 219 is formed on the upper surface thereof, and a first resistor film 263 is arranged on the insulating layer 219. The first resistor film 263 is formed of TiN, TiON or TiSiON.
The first resistor film 263 has a predetermined width (for example, about 1.5 μm) and a length (for example, 8 to 15).
It has a layout configuration in which unit resistor films in the shape of long strips in a plan view (about μm) are arranged in the length direction at regular intervals. _{An insulating layer (SiO 2} ) so as to cover the first resistor film 263.
264 is formed. A second resistor film 265 is provided on the insulating layer 264 so as to alternate with the first resistor film 263. The second resistor film 265 is also TiN, T.
Formed by iON or TiSiON.

The second resistor film 265 has a layout in which unit resistor films having a width and length equal to those of the first resistor film 263 and having a long strip-like shape in a plan view are arranged at regular intervals in the length direction thereof. In the case of the chip resistors 260 shown in FIGS. 31A to 31C, the second resistor film 265 is laminated so as to be located above the position where the first resistor film 263 does not exist. When viewed in the length direction of the resistor film, the first resistor film 263 and the second resistor film 265 are arranged alternately. The first resistor film 263 and the second resistor film 265 are preferably arranged so as to intersect or run in parallel.

Then, both ends in the length direction of the first resistor film 263 and both ends in the length direction of the second resistor film 265 have end regions facing each other in the vertical direction, and the end regions are opposed to each other. It is electrically connected by a via 266 formed on the insulating layer 264. The via 266 is filled with, for example, aluminum.
The second resistor film 265 is covered with, for example, a SiN film 222 as a protective film, and a polyimide layer 223, which is a protective layer, is laminated on the second resistor film 265.

Therefore, for example, when the first resistor film 263 and the second resistor film 265 form a unit resistor R having a resistance value r, respectively, the chip resistor 260 shown in FIGS. 31A and 31B has such a configuration. The partial resistance circuit of is represented as the circuit diagram shown in FIG. 31C.
In this way, by making the resistance network 214 of the chip resistor 260 have a two-layer structure of the first resistance circuit 261 and the second resistance circuit 262, the resistance value of the chip resistor 260 can be set to the resistance network. The arrangement area of 214 can be increased up to about twice without increasing.

More specifically, by sequentially connecting the first resistor film 263 arranged in the lower layer and the second resistor film 265 arranged in the upper layer in series, the resistance value of the resistance network 214 can be reduced. Can be doubled.
In the chip resistor 260 shown in FIGS. 31A to 31C, it was explained that the resistance network 214 has a two-layer structure of the first resistance circuit 261 and the second resistance circuit 262. However, the resistance network 214 is not limited to the two-layer structure of the resistance circuit, and may have a multi-layer structure of three or more layers. As a result, the resistance value of the resistance network 214 can be dramatically increased as compared with the case of the single-layer resistance circuit.

The other configuration of the chip resistor 260, that is, having a fuse film and the like, is the same as the configuration of the chip resistor 210 according to the previous embodiment described with reference to FIGS. 19, 22, 23 and the like.
32 and 33 are schematic vertical cross-sectional views showing the structure of the main part of the chip resistor 270 according to still another embodiment of the second invention. 32 and 33 are FIGS. 20B, respectively.
It is a vertical cross-sectional view drawn in comparison with FIG. 20C, and shows a structural difference from the chip resistor 210 shown in FIG.

With reference to FIGS. 32 and 33, the feature of the chip resistor 270 is that the resistor film included in the resistance network 214 has a two-layer structure instead of a single-layer structure.
_{That is, the insulating layer (SiO 2} ) 2 is placed on the upper surface of, for example, the silicon substrate 211 as a substrate.
19 is formed, and the first resistor film 220 is arranged on the insulating layer 219. The first resistor film 220 is formed of TiN, TiON or TiSiON. First resistor membrane 220
Is a plurality of resistor films extending in a straight line in parallel (hereinafter referred to as "resistor film line"), and the first resistor film line 220 is cut at a predetermined position in the line direction. There is. An aluminum film as the first conductor film piece 221 is laminated on the first resistor film line 220. Each of the first conductor film pieces 221 is laminated on the first resistor film line 220 at regular intervals R in the line direction.

Then, the insulating layer 271 _{of SiO 2} as an interlayer insulating film is formed so as to cover the first resistor film line 220 and the first conductor film piece 221. A second resistor film 272 is arranged on the insulating layer 271. The second resistor film 272 is also TiN, TiON or TiS.
Formed by iON. The layout of the second resistor film 272 is exactly the same as the layout of the first resistor film 220, and the layout arrangement is such that the two overlap each other in a plan view. The second resistor film 272 is also referred to as a plurality of resistor films (hereinafter referred to as “resistor film lines”) extending linearly in parallel, and the second resistor film line 272 is the first resistor film line. Like 220, it may be cut at a predetermined position in the line direction. An aluminum film as a second conductor film piece 273 is laminated on the second resistor film line 272. Each second conductor film piece 273 is laminated on the second resistor film line 272 at regular intervals R in the line direction.

Then, a SiN film 222 as a protective film is deposited on the second resistor film line 272 and the second conductor film piece 273, and a polyimide layer 223 as a protective layer is further laminated on the SiN film 222.
Since the chip resistor 270 has such a structure, a plurality of types of resistance circuits included in the resistance network 214 include a first layer composed of a first resistor film line 220 and a first conductor film piece 221 and a second resistor. It includes a two-layer structure with a second layer composed of a body film line 272 and a second conductor film piece 273. The resistance circuit of the first layer and the resistance circuit of the second layer have exactly the same layout pattern. Therefore, a plurality of types of resistance circuits are stacked one above the other so as to form a pair. In the plurality of types of resistance circuits, the resistors of the first layer and the second layer are not connected in series for each unit resistor R, but the resistance circuit of the first layer and the second layer are connected for each resistance circuit. The layer resistance circuit is connected in series.

As a result, each of the plurality of types of resistance circuits included in the resistance network 214 has twice the resistance value as compared with the first embodiment (chip resistor 210) described with reference to FIGS. 19 to 24. It is a resistance circuit that has.
As a result, the chip resistor 270 is compared with the chip resistor 210 of the first embodiment.
It can be a chip resistor 270 having twice the resistance value. The chip resistor 270 is
It can be a chip resistor having high resistance and whose resistance value can be digitally adjusted to a desired resistance value.

In the chip resistor 270 described with reference to FIGS. 32 and 33, when the resistance value is further increased, the first conductor film piece 221 of the first layer or the second conductor film piece 273 of the second layer is used. It may be configured not to be provided.
That is, for example, in the first resistor film line 220 of the first layer, the first conductor film piece 221
If this is not provided, the first resistor film line may be extended to form a resistor film line 220 having a high resistance value. Therefore, the resistance value can be increased as compared with the one in which the unit resistors R are connected in series.

Similarly, the resistance value of the resistance circuit of the second layer can be increased by configuring the second conductor film piece 273 not to be provided with respect to the second resistor film line 272.
And, as a whole, it is possible to realize a high resistance of the chip resistor 270.
The chip resistor 270 according to the above-described embodiment is not limited to a resistor circuit having a two-layer structure of a first layer and a second layer. A chip resistor 2 is provided with a multi-layered resistor circuit with three or more layers.
It is also possible to increase the resistance of 70.

FIG. 34 is a plan view of the chip resistor 280 according to still another embodiment of the present invention.
FIG. 35 is a cross-sectional view schematically showing a cross-sectional structure along AA of FIG. 34.
The feature of the chip resistor 280 is that the first connection electrode 212 and the second are used to increase the resistance value.
The resistance circuit 281 is formed under the connection electrode 213. Chip resistor 28
At 0, the first connection electrode 212 and the second connection electrode 21 as a pair of external connection electrodes
3 is essential. As for the arrangement area for providing the external connection electrodes 212 and 213, about half of the total area is used for the arrangement of the external electrodes when the chip resistor 280 is observed in a plan view.

Therefore, in this embodiment, in addition to the original arrangement region of the resistance network 214 between the first connection electrode 212 and the second connection electrode 213, the first connection electrode 212 and the second connection electrode 21
It has a structure in which a resistance circuit 281 is provided below 3.
With reference to FIG. 35, the resistance circuit 281 provided under the first connection electrode 212 has an insulating layer (SiO ₂ ) 21 on the silicon substrate 211, similarly to the resistance circuit included in the resistance network 214.
9 is formed and contains a resistor film 282 placed on it. Also in this embodiment, the resistor film 282 is formed of TiN, TiON or TiSiON. The resistor film 282 extends in a direction orthogonal to the paper surface, and a conductor film piece 283 is intermittently laminated on the resistor film 282. The conductor film piece 283 is an aluminum film.

An aluminum film 284 for connection is provided on the resistance circuit 281 in order to electrically connect the resistance circuit 281 to the first connection electrode 212. In the figure, the resistance of the resistance circuit 281 because the aluminum film 284 is connected only to a specific conductor film piece 283 intermittently provided on the resistor film 282 formed so as to extend in the direction perpendicular to the paper surface. The value can be the desired value.

The first connection electrode 212 is laminated on the aluminum film 284. First connection electrode 2
Reference numeral 12 denotes a palladium (Pd) layer 322 laminated on the Ni layer 321 and a palladium (Pd) layer 322 laminated on the Pd layer 322 in order to satisfactorily bond the anti-diffusion layer 321 formed of Ni with nickel and gold. It contains a gold (Au) pad layer 323.
The chip resistor 280 has a first connection electrode 212 and a second connection electrode 213, that is, a resistance circuit 281 provided under the external connection electrode. The chip resistor 280 is a substrate 2
A resistance circuit is provided on the entire surface of the element forming region on the upper surface of the eleven. Therefore, many resistance circuits can be provided, and high resistance can be achieved.

By providing a resistance circuit under at least one of the external connection electrodes 212 and 213, high resistance can be realized.
According to the second invention, in the chip resistor with high resistance described above, it is also possible to obtain a higher resistance chip resistor made by appropriately combining the configurations for increasing the resistance.
FIG. 36 is a diagram showing a circuit configuration of a discrete component 201 in which another circuit is incorporated in the above-mentioned chip resistor.

The discrete component 201 is, for example, a diode 255 and a resistance circuit 214 connected in series. The discrete component 201 is a chip-type discrete component including a diode 255. The present invention is not limited to the chip type as in this example, and the present invention can be applied as a discrete component having the resistance circuit 214 described above.
Examples of features extracted from this specification and drawings are shown below.

[Item 1] A substrate having a circuit forming surface on one surface, a first connection electrode and a second connecting electrode formed on the surface of the substrate on the circuit forming surface side, and a surface of the substrate on the circuit forming surface side. A resistance network formed on the top, one end side connected to the first connection electrode, and the other end side connected to the second connection electrode is included, and the circuit formation surface of the substrate is formed from the circuit formation surface. A trench dug down to a predetermined depth is formed, and the resistance network includes a resistance circuit having a resistor film provided along the inner wall surface of the trench so as to cross the trench, and the substrate. A chip resistor, characterized in that it is mounted on the mounting target in a state where the surface on the circuit forming surface side is arranged so as to face the mounting target.

According to the chip resistor according to Item 1, a trench is formed on the circuit forming surface of the substrate.
A resistor circuit having a resistor film extending along the inner wall surface of the trench is provided. Therefore, the length of the resistor film provided in the resistance circuit can be increased, and the resistance value can be increased. Further, since it is not necessary to expand the circuit forming surface in order to increase the resistance, both the miniaturization and the high resistance of the chip resistor can be achieved.

[Item 2] The resistance network includes a plurality of resistance circuits, and can be blown to electrically incorporate an arbitrary resistance circuit into the resistance network or electrically separate it from the resistance network. Item 2. The chip resistor according to Item 1, further comprising a fuse film.
According to the chip resistor according to Item 2, the fuse film can be blown to electrically incorporate an arbitrary resistance circuit into the resistance network or electrically separate it from the resistance network. Therefore,
The resistance value of the resistance network can be adjusted, and the resistance value of the chip resistor can be matched to a plurality of types of required resistance values without changing the basic design. Thereby, it is possible to provide a chip resistor having the same basic design and having the resistance value as the required resistance value. Moreover, even when the required resistance value is high resistance, it can be suitably dealt with.

Item 3. The chip resistor according to Item 1 or 2, wherein the resistor film has a constant width and includes a linear resistor film line.
According to the chip resistor according to Item 3, the resistance value of the resistance circuit can be increased by using the resistor film line.
[Item 4] The resistor film is formed so as to extend from the inner side surface of the trench to the circuit forming surface outside the trench, and is in contact with a portion of the resistor film formed on the circuit forming surface. Item 2. The chip resistor according to any one of Items 1 to 3, further comprising a formed wiring film.

According to the chip resistor according to Item 4, each resistor film extending into the trench can be used as a unit resistor. Further, the resistor film extending in the trench can be easily connected to the fuse film, the first connection electrode, or the second connection electrode.
[Item 5] The trench extends in a predetermined direction when the circuit forming surface is viewed in a plan view, and the resistor film is provided along the inner wall surface of the trench so as to cross the trench. Item 3. The chip resistor according to Item 3, wherein the chip resistor includes a plurality of resistor film lines arranged in parallel, which extend in a direction orthogonal to the length direction in which the trench extends.

According to the chip resistor according to Item 5, it is possible to obtain a chip resistor having a high resistance.
Item 6. The chip resistor according to any one of Items 1 to 5, wherein the resistor film is made of TiN, TiON or TiSiON.
According to the chip resistor according to Item 6, the chip resistor capable of forming a resistor film well can be used.

[Item 7] A substrate having a circuit forming surface on one surface, a first connection electrode and a second connecting electrode formed on the surface of the substrate on the circuit forming surface side, and a surface of the substrate on the circuit forming surface side. A resistance network formed on the top, one end side connected to the first connection electrode, and the other end side connected to the second connection electrode is included, and the resistance network is formed on the circuit forming surface of the substrate. The mounting target includes a resistance circuit having a line-shaped resistor film line extending linearly with a constant width, and the surface of the substrate on the circuit forming surface side is arranged so as to face the mounting target. A chip resistor characterized by being mounted on.

According to the chip resistor according to Item 7, the chip resistor can be used so that the resistance value can be set accurately and the resistance can be increased.
[Item 8] The resistance network includes a plurality of resistance circuits.
Item 7. The chip resistor according to Item 7, further comprising a fuse film that can be blown in order to electrically incorporate an arbitrary resistance circuit into the resistance network or electrically separate it from the resistance network. vessel.

According to the chip resistor according to Item 8, it is possible to obtain a high resistance chip resistor whose resistance value can be easily adjusted.
[Item 9] A unit in which a conductor film is provided on the resistor film line at regular intervals in the line direction, and the resistor film line at the fixed interval portion where the conductor film is not laminated is one unit. Item 7. The chip resistor according to Item 7 or 8, wherein the resistor constitutes a resistor.

According to the chip resistor according to Item 9, it is possible to obtain a chip resistor whose resistance value can be accurately set by connecting unit resistors in series.
Item 9. The chip resistor according to Item 9, wherein the conductor film laminated on the resistor film line and the fuse film include a metal film of the same material formed on the same layer. vessel.

According to the chip resistor according to Item 10, it is easy to manufacture, and a plurality of types of metal films (conductor films) can be easily formed at one time by a relatively small number of processes.
Item 7. The chip resistor according to any one of Items 8 to 10, wherein the resistance circuit includes a plurality of the unit resistors connected in series.
According to the chip resistor according to Item 11, it is possible to obtain a high resistance chip resistor whose resistance value can be easily adjusted.

Item 12. The chip resistor according to any one of Items 7 to 11, wherein the resistor film line is formed of TiN, TiON or TiSiON.
According to the chip resistor according to Item 12, it is possible to provide a chip resistor capable of forming a resistor film satisfactorily.
[Item 13] Item 1 further includes a protective layer made of polyimide that covers the surface of the resistance network.
The chip resistor according to any one of 12 to 12.

10, 30, 90, 100 Chip resistor 11 Substrate 12 First connection electrode (external connection electrode)
13 Second connection electrode (external connection electrode)
14 Resistor network 20,103 Resistor membrane (resistor membrane line)
21 Conductor film (wiring film)
101 Trench 102 Insulation film R, R', R "Unit resistor F Fuse film C Conductor film for connection

Claims (8)

At the time of mounting, a circuit forming surface is set on one surface which is a facing surface facing the mounting target, and a plurality of trenches are formed in a parallel streak on the circuit forming surface, and a silicon substrate.
A resistance network having one end and the other end and formed on the circuit forming surface of the substrate. The resistance network includes a large number of unit resistors R, and each unit resistor R is , A conductor film piece having a width equal to that of the resistor film which is laminated on the resistor film and short-circuited with the resistor film having a predetermined length in the length direction. Including and
In each of the trenches, the resistor film remaining without being short-circuited in the unit resistor R is arranged via the insulating film in the direction across the trench along one side surface, the bottom surface and the other side surface of the trench. ,
As a result, a plurality of resistance circuits having resistance values set in a geometric progression are provided.
A plurality of fuse films that are detachably connected to the plurality of resistance circuits and electrically capture an arbitrary resistance circuit or electrically separate an arbitrary resistance circuit.
A protective layer formed on the circuit forming surface of the substrate and covering the resistance network, and
A second layer formed through the protective layer so as to be connected to the one end portion of the resistance network, having a coating portion covering the protective layer, and formed only on the circuit forming surface of the substrate. 1 connection electrode and
It is formed through the protective layer so as to be connected to the other end of the resistance network, has a coating portion that covers the protective layer, and is formed only on the circuit forming surface of the substrate. Including the second connection electrode
Each of the plurality of resistance circuits includes a resistor film line extending in a line shape.
A discrete component in which the plurality of fuse films are arranged along the inner side of the second connection electrode so that the arrangement region and the arrangement direction are linear. The discrete component according to claim 1 , wherein each of the plurality of resistance circuits has resistance values set in a geometric progression having a common ratio of 2. The discrete component according to claim 1 or 2 , wherein each resistance circuit includes a series circuit in which a plurality of the unit resistors R are connected in series. The plurality of fuse films include a metal film, respectively.
The conductor film piece comprises a metal film made of the same material formed on the fuse layer identical to layer, discrete component according to any one of claims 1 to 3. The discrete component according to any one of claims 1 to 4 , wherein the plurality of resistance circuits include TiN, TiON, or TiSiON, respectively. The discrete component according to any one of claims 1 to 5 , wherein the protective layer is made of polyimide. The discrete component according to any one of claims 1 to 6 , further comprising another circuit incorporated in the resistance network. The discrete component according to any one of claims 1 to 6 , further comprising a diode connected in series to the resistance network.

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