JP6860691B2 - ルテニウム被覆を有する電子ビーム放出器 - Google Patents

ルテニウム被覆を有する電子ビーム放出器 Download PDF

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Publication number
JP6860691B2
JP6860691B2 JP2019554476A JP2019554476A JP6860691B2 JP 6860691 B2 JP6860691 B2 JP 6860691B2 JP 2019554476 A JP2019554476 A JP 2019554476A JP 2019554476 A JP2019554476 A JP 2019554476A JP 6860691 B2 JP6860691 B2 JP 6860691B2
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Japan
Prior art keywords
protective cap
cap layer
emitter
silicon emitter
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Active
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JP2019554476A
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English (en)
Japanese (ja)
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JP2020515019A (ja
JP2020515019A5 (OSRAM
Inventor
ギルダルド デルガド
ギルダルド デルガド
エドガルド ガルシア
エドガルド ガルシア
ルディ ガルシア
ルディ ガルシア
フランシス ヒル
フランシス ヒル
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KLA Corp
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KLA Corp
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Publication of JP2020515019A5 publication Critical patent/JP2020515019A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30407—Microengineered point emitters
    • H01J2201/30415—Microengineered point emitters needle shaped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30434—Nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/3048—Semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Cold Cathode And The Manufacture (AREA)
JP2019554476A 2016-12-20 2017-12-18 ルテニウム被覆を有する電子ビーム放出器 Active JP6860691B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662436925P 2016-12-20 2016-12-20
US62/436,925 2016-12-20
US15/588,006 US10141155B2 (en) 2016-12-20 2017-05-05 Electron beam emitters with ruthenium coating
US15/588,006 2017-05-05
PCT/US2017/066969 WO2018118757A1 (en) 2016-12-20 2017-12-18 Electron beam emitters with ruthenium coating

Publications (3)

Publication Number Publication Date
JP2020515019A JP2020515019A (ja) 2020-05-21
JP2020515019A5 JP2020515019A5 (OSRAM) 2021-02-04
JP6860691B2 true JP6860691B2 (ja) 2021-04-21

Family

ID=62562596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019554476A Active JP6860691B2 (ja) 2016-12-20 2017-12-18 ルテニウム被覆を有する電子ビーム放出器

Country Status (7)

Country Link
US (1) US10141155B2 (OSRAM)
JP (1) JP6860691B2 (OSRAM)
KR (1) KR102301555B1 (OSRAM)
CN (1) CN110291609B (OSRAM)
IL (1) IL267375B (OSRAM)
TW (1) TWI731202B (OSRAM)
WO (1) WO2018118757A1 (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10607806B2 (en) 2017-10-10 2020-03-31 Kla-Tencor Corporation Silicon electron emitter designs
US10395884B2 (en) 2017-10-10 2019-08-27 Kla-Tencor Corporation Ruthenium encapsulated photocathode electron emitter
US10714294B2 (en) 2018-05-25 2020-07-14 Kla-Tencor Corporation Metal protective layer for electron emitters with a diffusion barrier
US10714295B2 (en) * 2018-09-18 2020-07-14 Kla-Tencor Corporation Metal encapsulated photocathode electron emitter
US11495428B2 (en) * 2019-02-17 2022-11-08 Kla Corporation Plasmonic photocathode emitters at ultraviolet and visible wavelengths
US11217416B2 (en) * 2019-09-27 2022-01-04 Kla Corporation Plasmonic photocathode emitters
US11719652B2 (en) * 2020-02-04 2023-08-08 Kla Corporation Semiconductor metrology and inspection based on an x-ray source with an electron emitter array
US11335529B2 (en) * 2020-06-19 2022-05-17 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Thermally enhanced compound field emitter
US11699564B2 (en) * 2020-10-23 2023-07-11 Nuflare Technology, Inc. Schottky thermal field emitter with integrated beam splitter

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5363021A (en) 1993-07-12 1994-11-08 Cornell Research Foundation, Inc. Massively parallel array cathode
DE69422234T2 (de) * 1993-07-16 2000-06-15 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung einer Feldemissionsanordnung
JP3239038B2 (ja) * 1995-04-03 2001-12-17 シャープ株式会社 電界放出型電子源の製造方法
MX9709805A (es) * 1995-06-09 1998-03-29 Toshiba Kk Conjunto de catodo de tipo impregnado, substrato de catodo para usarse en el conjunto, cañon electronico usando el conjunto, y tubo electronico usando el conjunto de catodo.
JP3627836B2 (ja) * 1997-06-20 2005-03-09 ソニー株式会社 冷陰極の製造方法
JP3084272B2 (ja) * 1998-12-22 2000-09-04 松下電工株式会社 電界放射型電子源
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
JP2003288834A (ja) * 2002-03-27 2003-10-10 National Institute Of Advanced Industrial & Technology 電界放出型冷陰極
US7279686B2 (en) 2003-07-08 2007-10-09 Biomed Solutions, Llc Integrated sub-nanometer-scale electron beam systems
US7074719B2 (en) * 2003-11-28 2006-07-11 International Business Machines Corporation ALD deposition of ruthenium
US7465210B2 (en) 2004-02-25 2008-12-16 The Regents Of The University Of California Method of fabricating carbide and nitride nano electron emitters
WO2007047337A2 (en) 2005-10-13 2007-04-26 The Regents Of The University Of California Improved probe system comprising an electric-field-aligned probe tip and method for fabricating the same
KR101159074B1 (ko) 2006-01-14 2012-06-25 삼성전자주식회사 도전성 탄소나노튜브 팁, 이를 구비한 스캐닝 프로브마이크로스코프의 탐침 및 상기 도전성 탄소나노튜브 팁의제조 방법
CN101105488B (zh) * 2006-07-14 2011-01-26 鸿富锦精密工业（深圳）有限公司 逸出功的测量方法
GB0722120D0 (en) * 2007-11-10 2007-12-19 Quantum Filament Technologies Improved field emission backplate
KR20140044310A (ko) 2011-02-25 2014-04-14 가부시키가이샤 파람 전자총 및 전자빔 장치
CN103367134B (zh) * 2013-08-08 2015-11-11 电子科技大学 一种基于金属钌修饰的多孔硅表面金属电极制备方法
KR101674972B1 (ko) * 2013-12-26 2016-11-10 한국과학기술원 나노 스케일 패터닝 방법 및 이로부터 제조된 전자기기용 집적소자
US9984846B2 (en) 2016-06-30 2018-05-29 Kla-Tencor Corporation High brightness boron-containing electron beam emitters for use in a vacuum environment

Also Published As

Publication number Publication date
JP2020515019A (ja) 2020-05-21
CN110291609A (zh) 2019-09-27
US10141155B2 (en) 2018-11-27
US20180174794A1 (en) 2018-06-21
TWI731202B (zh) 2021-06-21
IL267375A (en) 2019-08-29
KR102301555B1 (ko) 2021-09-10
KR20190090036A (ko) 2019-07-31
WO2018118757A1 (en) 2018-06-28
TW201830448A (zh) 2018-08-16
IL267375B (en) 2022-09-01
CN110291609B (zh) 2020-10-27

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