JP6840502B2 - Manufacturing methods for microstructures, electronic components, circuit modules and electronic devices - Google Patents

Description

The present invention relates to a method for manufacturing a microstructure, an electronic component, a circuit module, and an electronic device.

In recent years, a microstructure having a porous structure produced by anodizing a metal such as aluminum has attracted attention, and various applications using this microstructure have been proposed.

For example, Patent Document 1 describes a method of forming a through hole having a high aspect ratio in a microstructure having a porous structure. Further, Patent Document 2 describes a porous capacitor in which a microstructure having a porous structure is used as a dielectric and a through electrode is provided in a through hole formed in the dielectric.

Japanese Unexamined Patent Publication No. 2013-057102 Japanese Unexamined Patent Publication No. 2016-058618

In the invention described in Patent Document 1, a resist mask is formed on the opening side of the porous in the process of forming a through hole in the microstructure having a porous structure. As a result, the resist material may penetrate into the porous material, making it impossible to form a high-definition patterned resist.

Therefore, as a method of preventing the resist material from penetrating into the porous material, there is a method of using a film resist as the resist. However, since the film resist is relatively thick, it is difficult to process it with high precision and the cost is high.

Further, in the invention described in Patent Document 2, since the conductor layer laminated on the base oxide is a single layer in the manufacturing process of the capacitor, it is necessary to secure the mechanical strength capable of withstanding the expansion of the pore diameter of the through hole. Is difficult.

Further, in the invention described in Patent Document 2, it is disclosed that the shape of the through hole is a peninsula shape in which only one side is connected like a U shape, or an island-shaped columnar portion is formed in the through hole connected. It is still difficult to secure the mechanical strength that can withstand the formation of these shapes.

In view of the above circumstances, an object of the present invention is to provide a method for manufacturing a fine structure having a high-definition resist forming pattern and ensuring mechanical strength, electronic components, circuit modules, and electronic devices. The purpose is.

In order to achieve the above object, the method for producing a microstructure according to an embodiment of the present invention is to anodize a part of a base material made of a metal material and remove the unoxidized part of the base material. , A plurality of pores communicating with the first main surface, the second main surface opposite to the first main surface, and the first main surface, but not with the second main surface. A substrate oxide having the above is formed.
The first conductor layer is laminated on the first main surface.
A second conductor layer is laminated on the first conductor layer.
A resist layer is formed on a part of the second main surface.
By etching the base material oxide from the second main surface to the first main surface using the resist layer as a mask, through holes are formed in the base material oxide.

According to the above production method, the plurality of pores formed in the base oxide do not communicate with the second main surface. As a result, for example, even if a liquid resist material is applied to the second main surface, the resist material does not penetrate into the plurality of pores. Therefore, the resist material can be patterned with high definition, and the resist forming pattern can be made with high definition.

Further, according to the above manufacturing method, since the conductor layer laminated on the first main surface has a two-layer structure, the mechanical strength of the base oxide is ensured. Therefore, according to the present invention, it is possible to provide a method for producing a fine structure in which the resist forming pattern is high-definition and the mechanical strength is ensured.

The through hole may have a shape other than a circular shape when viewed from a direction orthogonal to the first and second main surfaces.
This makes it possible to manufacture a structure such as a coil having a shape other than a circular shape, which is difficult to form with a circular through hole, by utilizing the shape of the through hole.

The base material oxide between the pores may be projected into the range removed by etching within the range of 5 rows × 5 or more in the arrangement of the pores.
Thereby, for example, a peninsula-shaped through hole can be formed.

In the range where the base oxide between the pores and the pores is removed by etching, the base oxide may remain in a columnar shape without being removed by etching. Holes can be formed.

The first conductor layer may be a conductive adhesive tape.
As a result, the first conductor layer can be easily peeled off from the first main surface of the base material oxide, and the first and second conductor layers can be easily removed.

The thickness of the second conductor layer may be 10 times or more the distance between the centers of the pores adjacent to each other.

The thickness of the second conductor layer may be 1 μm or more.

The electronic component according to one embodiment of the present invention includes a microstructure, a first conductor layer, a second conductor layer, a third conductor layer, a first inner conductor, and a second inner conductor. Have.
The microstructure is formed by anodizing a metal and communicates with the first main surface, the second main surface opposite to the first main surface, and the first main surface, and the first main surface is communicated with the first main surface. It has a plurality of pores that do not communicate with the main surface of No. 2 and through holes that communicate with the first and second main surfaces.
The first conductor layer is laminated on the first main surface.
The second conductor layer is laminated on the second main surface.
The third conductor layer is laminated on the second conductor layer.
The first inner conductor is housed in a part of the through hole, is connected to the first conductor layer, and is separated from the second conductor layer.
The second inner conductor is housed in another part of the through hole, is connected to the second conductor layer, and is separated from the first conductor layer.

The circuit module according to the embodiment of the present invention mounts the above electronic components.

The electronic device according to the embodiment of the present invention is equipped with the above circuit module.

It is a schematic perspective view of the microstructure which concerns on one Embodiment of this invention. It is sectional drawing of the microstructure. It is a schematic perspective view of the microstructure. It is a schematic diagram which shows the manufacturing process of the microstructure. It is a schematic diagram which shows the manufacturing process of the microstructure. It is a schematic diagram which shows the manufacturing process of the microstructure. It is a schematic diagram which shows the manufacturing process of the electronic component which concerns on one Embodiment of this invention. It is a schematic diagram which shows the manufacturing process of the electronic component. It is a schematic diagram which shows the manufacturing process of the electronic component. It is a schematic diagram which shows the manufacturing process of the electronic component.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[Structure of microstructure]
FIG. 1 is a schematic perspective view of the microstructure 100 according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the microstructure 100. In the following figure, the X direction, the Y direction, and the Z direction are three directions orthogonal to each other.

As shown in FIGS. 1 and 2, the microstructure 100 has a porous structure and is composed of a main body 101, a first hole 101a, and a second hole 101d.

The numbers and sizes of the first and second holes 101a and 101d shown in FIGS. 1 and 2 are for convenience, and the actual ones are smaller and larger. Further, in FIG. 2, the second hole 101d is shown as a rectangular columnar through hole for convenience of explanation. Further, although the inner wall of the second hole 101d is not actually smooth, it is omitted in the drawings.

The main body 101 has a front surface 101b parallel to the X direction and a back surface 101c opposite to the front surface 101b. The main body 101 is made of a metal oxide, for example, Al (aluminum), Ta (tantalum), Nb (niobium), Ti (titanium), Zr (zirconium), Hf (hafnium), Zn (zinc), W (tungsten). Alternatively, it is composed of an oxide such as Sb (antimony). The main body 101 of this embodiment is typically made of Al ₂ O ₃ (aluminum oxide).

The dimension D2 (thickness) in the Z direction of the main body 101 and the dimension D3 in the X direction are not particularly limited, and the dimension D2 is, for example, about several hundred μm, and the dimension D3 is, for example, about several hundred μm to several thousand μm. ..

The first and second holes 101a and 101d are formed along a direction perpendicular to the front surface 101b and the back surface 101c (thickness direction of the main body 101). The first hole 101a communicates with the front surface 101b and does not communicate with the back surface 101c. On the other hand, the second hole 101d is formed so as to communicate with the front surface 101b and the back surface 101c.

The first hole 101a is a through hole forming a porous (pore) of the microstructure 100. As shown in FIG. 1, the first hole 101a according to the present embodiment has a six-law regular arrangement in the layer plane direction of the microstructure 100. The six-law regular array is an array in which the center of each first hole 101a is located at the apex of a regular hexagon. The hexagonal ordered arrangement of the first holes 101a is due to the self-organizing action (described later) of the metal oxides constituting the microstructure 100.

The shape (hole shape) of the first hole 101a is not particularly limited, and may be, for example, a substantially circular shape having an inner diameter of several tens of nm to several thousand nm. Further, the distance D1 (distance between centers D1) between the first holes 101a adjacent to each other is not particularly limited, and may be, for example, about several tens of nm to several thousand nm.

As shown in FIGS. 1 and 2, the second hole 101d is a through hole having an inner diameter larger than that of the first hole 101a. The shape of the second hole 101d is not particularly limited, and may be, for example, a circle or a substantially circular shape having an inner diameter of several tens of nm to several thousand nm. The distance between the second holes 101d adjacent to each other is not particularly limited, and may be, for example, about several tens of nm to several thousand nm.

Here, the shape of the second hole 101d according to the present embodiment may be a shape other than a circular shape or a substantially circular shape, and as shown in FIG. 1, the shape seen from the Z direction is a peninsula shape or an annular shape. You may. As a result, by using the microstructure 100, it becomes possible to manufacture peninsula-shaped or annular coil parts, wiring circuit parts, and the like.

FIG. 3 is a schematic perspective view of the microstructure 100 and shows the shape of the second hole 101d. The second hole 101d according to the present embodiment is formed by etching a base oxide 302 having a plurality of holes H1 (first hole 101a) as described later (see FIG. 6). Therefore, the second hole 101d becomes a through hole in which a plurality of first holes 101a are connected. Therefore, as shown in FIG. 3, the inner wall surface 111d of the second hole 101d is a pleated curved surface derived from the shape of the plurality of first holes 101a.

[Manufacturing method of microstructure]
A method for manufacturing the microstructure 100 will be described. 4 to 6 are schematic views showing an example of a method for manufacturing the microstructure 100.

FIG. 4A shows the base material 301 which is the base of the main body 101. When the main body 101 is a metal oxide (for example, aluminum oxide), the base material 301 is the metal before oxidation (for example, aluminum). A pit may be provided on the surface of the base material 301. The pits are regularly arranged concave structures and serve as base points during the growth of metal oxides, which will be described later. The pits can be formed by any method, for example, by pressing a mold on the base material 301 or etching the surface of the base material 301.

Next, a voltage is applied in the electrolytic solution solution using the base material 301 as an anode. As a result, as shown in FIG. 4B, the metal surface of the base material 301 is oxidized (anodized) to form the base material oxide 302. At this time, the pores H1 are formed in the base oxide 302 by the self-assembling action of the base oxide 302. As shown in FIG. 4B, the holes H1 are formed along the thickness direction (Z direction) of the base material 301. The solution used for anodization can be, for example, oxalic acid (0.1 mol / L) adjusted to 15 ° C to 20 ° C.

Subsequently, as shown in FIG. 4C, the unoxidized base material 301 is removed. Removal of the base material 301 is performed, for example, by wet etching. Hereinafter, the surface of the base material oxide 302 communicating with the hole H1 is referred to as the first main surface 302a, and the surface not communicating with the hole H1 on the opposite side thereof is referred to as the second main surface 302b.

Subsequently, as shown in FIG. 5A, the first conductor layer 303 made of a conductive material is laminated on the first main surface 302a of the base material oxide 302. The first conductor layer 303 according to this embodiment is typically a sputtered film. The method of laminating the first conductor layer 303 is not limited to the sputtering method, and may be formed by any method such as a vacuum vapor deposition method.

When the first conductor layer 303 is laminated on the first main surface 302a to form a conductor or the like in the holes H2 formed in the step described later by electroplating or the like, the first conductor layer 303 functions as a seed layer. It becomes possible.

In the present embodiment, the first conductor layer 303 may be, for example, a conductive adhesive tape or the like. In this case, the adhesive tape preferably does not leave glue on the first main surface 302a.

Subsequently, as shown in FIG. 5B, the second conductor layer 304 made of a conductive material is laminated on the first conductor layer 303. As a result, the mechanical strength of the base oxide 302 is improved. The second conductor layer 304 is preferably thicker than the first conductor layer 303.

The thickness of the second conductor layer 304 according to the present embodiment is preferably 10 times or more the center-to-center distance (D1) of the holes H1 adjacent to each other, and specifically, for example, 1 μm or more.

The second conductor layer 304 is typically a plating film. When the plating film is laminated on the first conductor layer 303, it can be formed by any method such as an electroplating method, an electroless plating method, a hot dip plating method, or a vacuum vapor deposition method.

Subsequently, the resist layer R2 is formed on the second main surface 302b of the base oxide 302. The resist layer R2 can be formed by, for example, photolithography.

Specifically, the base oxide 302 is washed, and as shown in FIG. 5C, the resist material R1 (photoresist) is applied to the entire surface of the second main surface 302b. For cleaning the base oxide 302, for example, ethanol or a mixed solution of _{sulfuric acid (H 2} SO ₄ ) and hydrogen peroxide (H ₂ O _{2 ) (H 2} SO ₄ : H ₂ O ₂ = 4: 1) ) Etc. are adopted.

Next, the base oxide 302 coated with the resist material R1 is prebaked, and the resist material R1 is irradiated with ultraviolet rays through the photomask. As a result, the resist material R1 is patterned. Subsequently, the pattern patterned on the resist material R1 is developed with a developing solution or the like, rinsed, and post-baked so that the resist layer R2 is partially formed on the second main surface 302b as shown in FIG. 6A. It is formed.

Here, since the second main surface 302b does not communicate with the hole H1, even if the resist material R1 is applied to the second main surface 302b, the resist material R1 does not invade the hole H1. As a result, the etching step described later can be performed without being interfered with the resist material R1 that has penetrated into the hole H1.

Further, when the resist material R1 is liquid, for example, the resist material R1 can be patterned with higher definition than when a film resist is used, for example. Therefore, a high-definition patterned resist layer R2 can be formed on the second main surface 302b. Specifically, the pattern size of the resist layer R2 can be, for example, about several μm.

Subsequently, as shown in FIG. 6B, the base oxide 302 is removed from the second main surface 302b to the first main surface 302a using the resist layer R2 as a mask. This can be done by wet etching (wet etching). Wet etching can be performed, for example, by immersing the substrate oxide 302 in a phosphoric acid solution (30 wt%) adjusted to 30 ° C. for 3 hours. Hereinafter, the through hole communicating with the first main surface 302a and the second main surface 302b formed by this removing step will be referred to as a hole H2.

Here, in the present embodiment, in the step of etching the base oxide 302, the base oxide 302 between the holes H1 and the holes H1 is etched in the range of 5 rows × 5 or more in the arrangement of the holes H1. It may be projected into the range removed by. This makes it possible to form a hole H2 whose shape when viewed from the Z direction is, for example, a peninsula (see FIG. 1).

Alternatively, the base material oxide 302 between the holes H1 and the holes H1 may remain in the range where the base material oxide 302 has been removed by etching without removing the base material oxide 302 in a columnar shape. As a result, it is possible to form a hole H2 whose shape when viewed from the Z direction is, for example, an annular shape (see FIG. 1).

As shown in FIG. 6, the pores H2 are formed by wet etching the base oxide 302 on which the pores H1 are formed in advance. This improves the anisotropy of wet etching. That is, even if the base oxide 302 is etched by wet etching, the pores H1 suppress the pore diameter from expanding in the X direction from the second main surface 302b toward the first main surface 302a, and the holes have a high aspect ratio. It becomes possible to form H2.

Further, the inner wall surface of the holes H2 according to the present embodiment has a shape in which the joint boundary portion remains in a pleated shape by joining the plurality of holes H1 by wet etching (see FIG. 3).

Subsequently, as shown in FIG. 6C, the resist layer R2 is removed, and the first and second conductor layers 303 and 304 are removed. The first and second conductor layers 303 and 304 can be removed by, for example, a wet etching method, a dry etching method, an ion milling method, a CMP (Chemical Mechanical Polishing) method, or the like.

When the first conductor layer 303 is an adhesive tape having conductivity, the first conductor layer 303 can be easily peeled off from the first main surface 302a of the base material oxide 302. Thereby, the first and second conductor layers 303 and 304 can be easily removed.

As described above, the microstructure 100 can be manufactured. The method for producing the microstructure 100 is not limited to the above, and the microstructure 100 can also be produced by a different method.

The base oxide 302 corresponds to the main body 101, the hole H1 corresponds to the first hole 101a, and the hole H2 corresponds to the second hole 101d. Further, the first main surface 302a corresponds to the front surface 101b, and the second main surface 302b corresponds to the back surface 101c. In FIG. 6B, the hole H2 is shown as a rectangular columnar through hole for convenience of explanation. Further, although the inner wall of the hole H2 is not actually smooth, it is omitted in the drawings.

[Action of the above manufacturing method]
In the method for producing the microstructure 100 according to the present embodiment, as shown in FIG. 5, after the first conductor layer 303 is laminated on the first main surface 302a of the base material oxide 302, the first conductor layer 303 is further laminated. The second conductor layer 304 is laminated on the surface. That is, the conductor layer laminated on the first main surface 302a has a two-layer structure instead of a single layer, and the mechanical strength of the base oxide 302 is enhanced.

As a result, for example, the holes H2 of the structure shown in FIG. 6B are filled with a conductor or the like, and the base oxide 302 is selectively removed to form a structure such as pillars according to the shape of the holes H2. When obtained, the structure tends to be self-supporting on the first conductor layer 303.

That is, to make the conductor layer laminated on the first main surface 302a a two-layer structure, the structure shown in FIG. 6B can be used as a mold to obtain a structure corresponding to the shape of the hole H2. It will be advantageous. For the selective removal of the base oxide 302 described above, for example, a wet etching method, a dry etching method, an ion milling method, a CMP (Chemical Mechanical Polishing) method, or the like may be adopted.

[Application of the above manufacturing method]
The method for producing the microstructure 100 can be applied to various uses. For example, the above manufacturing method can be applied to a manufacturing method of electronic parts such as capacitors. Hereinafter, a manufacturing method in the case of manufacturing the electronic component 200 by applying the above manufacturing method will be described.

(Manufacturing method of electronic parts)
7 to 10 are schematic views showing an example of a method for manufacturing the electronic component 200.

First, as shown in FIG. 7A, a structure in which the first and second conductor layers 303 and 304 are laminated on the microstructure 100 by the same method as described in the method for manufacturing the microstructure 100. To make.

Subsequently, the base material oxide 302 is electroplated using the first conductor layer 303 as a seed layer. As a result, as shown in FIG. 7B, an internal conductor M1 having a predetermined length is formed in the hole H2. As shown in the figure, the inner conductor M1 is not exposed on the second main surface 302b. Further, since the hole H1 does not communicate with the second main surface 302b, the plating solution does not penetrate into the hole H1 and the inner conductor M1 is not formed.

Subsequently, the resist material R3 is applied to the second main surface 302b as shown in FIG. 7 (c) by the same method as that described in the method for manufacturing the microstructure 100, and then shown in FIG. 8 (a). As described above, the resist layer R4 is partially formed on the second main surface 302b. As shown in FIG. 8A, the resist layer R4 penetrates into the hole H2 and covers the tip of the inner conductor M1.

Subsequently, as shown in FIG. 8B, the base oxide 302 is removed from the second main surface 302b to the first main surface 302a using the resist layer R4 as a mask. This can be done by wet etching (wet etching). Hereinafter, the through hole communicating with the first main surface 302a and the second main surface 302b formed by this removing step is referred to as a hole H3.

As shown in the figure, the pores H3 are formed by processing the base oxide 302 on which the pores H1 are formed in advance. Therefore, as described in the method for producing the microstructure 100, the pores H3 have an aspect ratio. It becomes a high through hole. Further, in FIG. 8B, the hole H3 is shown as a rectangular columnar through hole for convenience of explanation. Further, although the inner wall of the hole H3 is not actually smooth, it is omitted in the drawings.

Subsequently, the resist layer R4 was removed as shown in FIG. 8 (c), and the third conductor layer 305 made of a conductive material was laminated on the second main surface 302b as shown in FIG. 9 (a). As shown in (b), the fourth conductor layer 306 made of a conductive material is laminated on the third conductor layer 305. The third and fourth conductor layers 305 and 306 can be formed by any method such as a sputtering method, a vacuum vapor deposition method, or a plating method.

The thickness of the fourth conductor layer 306 is preferably 10 times or more the center-to-center distance (D1) of the holes H1 adjacent to each other, and specifically, for example, 1 μm or more.

Subsequently, as shown in FIG. 9C, the first and second conductor layers 303 and 304 are removed. The first and second conductor layers 303 and 304 can be removed by, for example, a wet etching method, a dry etching method, an ion milling method, a CMP (Chemical Mechanical Polishing) method, or the like.

Subsequently, the base material oxide 302 is electroplated using the third conductor layer 305 as a seed layer. As a result, as shown in FIG. 10A, an inner conductor M2 having a predetermined length is formed in the hole H3. As shown in the figure, the inner conductor M2 is not exposed on the first main surface 302a.

Subsequently, as shown in FIG. 10B, the fifth conductor layer 307 is laminated on the first main surface 302a. The fifth conductor layer 307 can be formed by any method such as a sputtering method or a vacuum vapor deposition method.

As described above, the electronic component 200 can be manufactured. The manufacturing method of the electronic component 200 is not limited to the above, and can be manufactured by a different method.

The base oxide 302 corresponds to the dielectric of the electronic component 200, and the internal conductors M1 and M2 correspond to the internal electrodes of the electronic component 200. Further, the conductor layers 305 to 307 correspond to the external electrodes of the electronic component 200. The electronic component 200 has a two-layer structure in which the conductor layer laminated on the second main surface 302b has a two-layer structure, so that the mechanical strength is improved.

(Application of electronic components)
The electronic component 200 according to this embodiment can be mounted on a mounting object such as a circuit board to form a circuit module. Further, the circuit module on which the electronic component 200 is mounted can form an electronic device together with other electronic components.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and can be applied to various uses without departing from the gist of the present invention.

The method for manufacturing the microstructure 100 of the above embodiment is not only applicable to a method for manufacturing electronic components such as capacitors and coils, but also applied to a method for manufacturing a pattern substrate made of, for example, aluminum oxide which is an insulator. It is possible.

Alternatively, the method for producing the microstructure 100 of the above embodiment can also be applied to a method for producing a mold for forming a high aspect ratio structure.

Further, the shape of the plurality of second holes 101d is not limited to the shape described in the above embodiment, and may be, for example, a flat spiral shape. As a result, the microstructure 100 can be used as a structure for forming a coil.

Specifically, first, the space D1 between the first holes 101a adjacent to each other is set to a narrow pitch of, for example, about 100 nm, and the inside of the microstructure 100 is filled with a conductor to obtain a flat coil shape. The orbiting conductor also has a narrow pitch.

Then, insulating layers are formed on the upper and lower surfaces except for both ends of the coil conductor, and after each lead-out conductor is formed from both ends of the coil conductor, an external electrode is formed. This makes it possible to manufacture coil parts having a high aspect ratio and a narrow pitch.

100 ... Microstructure 101 ... Main body 101a ... First hole 101b ... Front surface 101c ... Back surface 101d ... Second hole 200 ... Electronic component 303 ... First Conductor layer 304 ... 2nd conductor layer 305 ... 3rd conductor layer 306 ... 4th conductor layer 307 ... 5th conductor layer R1, R3 ... Resist material R2, R4 ... Resist layer

Claims (10)

A part of the base material made of metal material is anodized and
By removing the non-oxidized portion of the base material, the first main surface, the second main surface opposite to the first main surface, and the first main surface are communicated with each other. Forming a substrate oxide having a plurality of pores not communicating with the second main surface,
A first conductor layer is laminated on the first main surface,
A second conductor layer is laminated on the first conductor layer,
A resist layer is formed on a part of the second main surface,
By etching the base material oxide from the second main surface to the first main surface using the resist layer as a mask, through holes are formed in the base material oxide.
A method for producing a microstructure in which the opening area of the through hole on the first main surface is larger than the opening area of the pore on the first main surface. The method for producing a microstructure according to claim 1.
A method for manufacturing a microstructure in which the through hole has a shape other than a circular shape when viewed from a direction orthogonal to the first and second main surfaces. The method for producing a microstructure according to claim 1 or 2.
A method for producing a microstructure in which the base material oxide between the pores is projected into a range removed by etching within a range of 5 rows × 5 or more in the arrangement of the pores. The method for producing a microstructure according to claim 1 or 2.
A method for producing a microstructure in which the base material oxide remains in a columnar shape without being removed by etching within the range in which the base material oxide between the pores is removed by etching. The method for producing a microstructure according to any one of claims 1 to 4.
A method for manufacturing a microstructure in which the first conductor layer is a conductive adhesive tape. The method for producing a microstructure according to any one of claims 1 to 5.
A method for producing a microstructure in which the thickness of the second conductor layer is 10 times or more the distance between the centers of the pores adjacent to each other. The method for producing a microstructure according to any one of claims 1 to 6.
A method for producing a microstructure in which the thickness of the second conductor layer is 1 μm or more. Formed by anodizing a metal, it communicates with the first main surface, the second main surface opposite to the first main surface, the first main surface, and communicates with the second main surface. a plurality of pores that are not, the a through hole communicating with the first and second main faces, have a, open area in the first main surface of the through hole, the said pores A microstructure larger than the perforated area on the first main surface,
The first conductor layer laminated on the first main surface and
With the second conductor layer laminated on the second main surface,
With the third conductor layer laminated on the second conductor layer,
A first internal conductor housed in a part of the through hole, connected to the first conductor layer, and separated from the second conductor layer.
A second inner conductor housed in another part of the through hole, connected to the second conductor layer, and separated from the first conductor layer.
Electronic components equipped with. A circuit module equipped with the electronic component according to claim 8. An electronic device equipped with the circuit module according to claim 9.

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