JP6837743B2 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- JP6837743B2 JP6837743B2 JP2015224403A JP2015224403A JP6837743B2 JP 6837743 B2 JP6837743 B2 JP 6837743B2 JP 2015224403 A JP2015224403 A JP 2015224403A JP 2015224403 A JP2015224403 A JP 2015224403A JP 6837743 B2 JP6837743 B2 JP 6837743B2
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- charge separation
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- electrode
- photoelectric conversion
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Classifications
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- H—ELECTRICITY
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
- H01M14/005—Photoelectrochemical storage cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/354—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-insulator-semiconductor [m-i-s] structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
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- H—ELECTRICITY
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Description
実施の形態1は図1〜図6を参照しながら説明する。図1に示す光電変換装置10Aは、光電変換装置10の一例である。この光電変換装置10Aは、入射切替部20Aや光電変換素子30などを有する。
実施の形態2は図7〜図9を参照しながら説明する。なお図示および説明を簡単にするため、特に明示しない限り、実施の形態1で用いた要素と同一の要素には同一の符号を付して説明を省略する。よって、主に実施の形態1と相違する点を説明する。
以上では本発明を実施するための形態について実施の形態1,2に従って説明したが、本発明は当該形態に何ら限定されるものではない。言い換えれば、本発明の要旨を逸脱しない範囲内において、種々なる形態で実施することもできる。例えば、次に示す各形態を実現してもよい。
上述した実施の形態1,2および他の実施の形態によれば、以下に示す各効果を得ることができる。
20(20A,20B) 入射切替部
21 増幅器
22 信号生成器
23 液晶シャッター
24 整流器
25 インバータ
26 モータ
27 不透明部材
30 光電変換素子
31 第1電極(出力端子)
32 電荷分離層(電荷分離部)
33 絶縁分極層(絶縁分極部)
34 第2電極(出力端子)
Claims (7)
- 光エネルギーを電気エネルギーに変換して出力する光電変換装置において、
出力端子となる第1電極と第2電極とを含む一対の電極と、
前記第1電極に接触して設けられ、光を受けて電荷分離する電荷分離部と、
前記電荷分離部と前記第2電極との間に介在されて設けられ、前記第1電極と前記電荷分離部とを絶縁して分極する絶縁分極部と、
前記第1電極と前記第2電極との間に生じる起電力に基づいて、光が前記電荷分離部に入射する入射状態と、光が前記電荷分離部に入射しない非入射状態とを交互に切り替える入射切替部とを有し、
前記入射切替部は、少なくとも前記電荷分離部を覆って経時的に光の透過と遮断を交互に変えられる液晶シャッターであり、
前記液晶シャッターは、前記出力端子から出力される交流電流又は交流電圧の印加により光を遮蔽する前記非入射状態に切り替わり、印加の停止により光を透過する前記入射状態に切り替わり、
前記入射切替部における前記入射状態から前記非入射状態への切り替えは、前記起電力の立ち上がり時間経過後に行われ、
前記入射切替部における前記非入射状態から前記入射状態への切り替えは、前記起電力の立ち下がり時間経過後に行われ、
前記電荷分離部による電荷分離と、前記絶縁分極部による蓄電および放電と、前記入射切替部による前記入射状態と前記非入射状態の切り替えとによって自己発振し、前記出力端子から交流電流または交流電圧を持続して出力することを特徴とする光電変換装置。 - 前記出力端子から出力される交流電流又は交流電圧が任意の周波数になるように前記出力端子から出力される交流電流又は交流電圧を所定時間後に前記液晶シャッターに出力する遅延手段を有することを特徴とする請求項1に記載の光電変換装置。
- 前記電荷分離部は、光を受けて電荷分離が行える有機化合物,無機化合物,金属錯体のうちで一以上を含むことを特徴とする請求項1または2に記載の光電変換装置。
- 前記電荷分離部は、電荷移動吸収帯をもつドナーおよびアクセプターのうちで一方または双方を含むことを特徴とする請求項1から3のいずれか一項に記載の光電変換装置。
- 前記電荷分離部は、ペロブスカイト型結晶構造の化合物を含むことを特徴とする請求項1から4のいずれか一項に記載の光電変換装置。
- 前記絶縁分極部は、陽イオンと陰イオンとを主成分として含むイオン液体であることを特徴とする請求項1から5のいずれか一項に記載の光電変換装置。
- 前記イオン液体は、プラスチッククリスタル相を示すことを特徴とする請求項6に記載の光電変換装置。
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JP2015224403A JP6837743B2 (ja) | 2015-11-17 | 2015-11-17 | 光電変換装置 |
EP16865933.2A EP3379551A4 (en) | 2015-11-17 | 2016-11-16 | PHOTOELECTRIC CONVERSION DEVICE |
PCT/JP2016/004890 WO2017085929A1 (ja) | 2015-11-17 | 2016-11-16 | 光電変換装置 |
US15/768,665 US20180315553A1 (en) | 2015-11-17 | 2016-11-16 | Photoelectric conversion apparatus |
CN201680066360.9A CN108352257A (zh) | 2015-11-17 | 2016-11-16 | 光电转换装置 |
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US4152597A (en) * | 1975-11-14 | 1979-05-01 | Arden Sher | Apparatus including effectively intrinsic semiconductor for converting radiant energy into electric energy |
US4728878A (en) * | 1986-05-08 | 1988-03-01 | John Anthony | Solar energy electric generating system |
JP2000228884A (ja) * | 1999-02-04 | 2000-08-15 | Tomotada Enami | 太陽光発電装置 |
JP4278080B2 (ja) * | 2000-09-27 | 2009-06-10 | 富士フイルム株式会社 | 高感度受光素子及びイメージセンサー |
WO2004064189A1 (ja) * | 2003-01-14 | 2004-07-29 | Japan Science And Technology Agency | 光検出可能な固体薄膜二次電池 |
JP4997610B2 (ja) * | 2006-12-28 | 2012-08-08 | 独立行政法人産業技術総合研究所 | プラスティッククリスタル |
CN102803833B (zh) * | 2009-06-30 | 2015-06-17 | 松下电器产业株式会社 | 照明设备 |
JP2013020990A (ja) * | 2009-11-02 | 2013-01-31 | Murata Mfg Co Ltd | 光電変換素子および光電変換装置 |
WO2011114708A1 (ja) * | 2010-03-15 | 2011-09-22 | 国立大学法人名古屋大学 | 有機光電変換素子および撮像素子 |
JP2011238472A (ja) * | 2010-05-11 | 2011-11-24 | Sony Corp | 光電変換装置 |
AU2011256052A1 (en) * | 2010-05-17 | 2012-12-13 | Nippon Kayaku Kabushiki Kaisha | Photoelectric conversion element using thermosetting sealing agent for photoelectric conversion element |
JP2013016358A (ja) * | 2011-07-04 | 2013-01-24 | Sony Corp | 光電変換素子モジュール |
KR20150143548A (ko) * | 2013-04-12 | 2015-12-23 | 가부시키가이샤 셀모 엔터테인먼트 재팬 | 광전 변환 소자, 축방전 기능을 갖는 광전 변환 소자 및 2차전지 |
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CN108352257A (zh) | 2018-07-31 |
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JP2017092402A (ja) | 2017-05-25 |
EP3379551A4 (en) | 2019-07-17 |
US20180315553A1 (en) | 2018-11-01 |
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