JP6814195B2 - 特にマイクロリソグラフィ投影露光装置用のミラー - Google Patents
特にマイクロリソグラフィ投影露光装置用のミラー Download PDFInfo
- Publication number
- JP6814195B2 JP6814195B2 JP2018501301A JP2018501301A JP6814195B2 JP 6814195 B2 JP6814195 B2 JP 6814195B2 JP 2018501301 A JP2018501301 A JP 2018501301A JP 2018501301 A JP2018501301 A JP 2018501301A JP 6814195 B2 JP6814195 B2 JP 6814195B2
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- Prior art keywords
- optical system
- mirror
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- protective layer
- projection exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000001393 microlithography Methods 0.000 title claims description 7
- 239000010410 layer Substances 0.000 claims description 146
- 239000000758 substrate Substances 0.000 claims description 68
- 239000011241 protective layer Substances 0.000 claims description 43
- 230000003287 optical effect Effects 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 24
- 230000005670 electromagnetic radiation Effects 0.000 claims description 18
- 238000010521 absorption reaction Methods 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 230000005855 radiation Effects 0.000 claims description 11
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- 238000005286 illumination Methods 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 238000005259 measurement Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- GNKTZDSRQHMHLZ-UHFFFAOYSA-N [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] Chemical compound [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] GNKTZDSRQHMHLZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015213253.6A DE102015213253A1 (de) | 2015-07-15 | 2015-07-15 | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
| DE102015213253.6 | 2015-07-15 | ||
| PCT/EP2016/066178 WO2017009185A1 (de) | 2015-07-15 | 2016-07-07 | Spiegel, insbesondere für eine mikrolithographische projektionsbelichtungsanlage |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018522281A JP2018522281A (ja) | 2018-08-09 |
| JP2018522281A5 JP2018522281A5 (enExample) | 2019-08-15 |
| JP6814195B2 true JP6814195B2 (ja) | 2021-01-13 |
Family
ID=56497732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018501301A Active JP6814195B2 (ja) | 2015-07-15 | 2016-07-07 | 特にマイクロリソグラフィ投影露光装置用のミラー |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10331048B2 (enExample) |
| EP (1) | EP3323022A1 (enExample) |
| JP (1) | JP6814195B2 (enExample) |
| DE (1) | DE102015213253A1 (enExample) |
| WO (1) | WO2017009185A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017200667A1 (de) | 2017-01-17 | 2018-07-19 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage oder ein Inspektionssystem |
| EP3454119B1 (en) | 2017-09-09 | 2023-12-27 | IMEC vzw | Euv absorbing alloys |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5086443A (en) * | 1990-08-03 | 1992-02-04 | The United States Of America As Represented By The United States Department Of Energy | Background-reducing x-ray multilayer mirror |
| EP1333323A3 (en) * | 2002-02-01 | 2004-10-06 | Nikon Corporation | Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same |
| JP2007329368A (ja) * | 2006-06-09 | 2007-12-20 | Canon Inc | 多層膜ミラー、評価方法、露光装置及びデバイス製造方法 |
| WO2008065821A1 (en) * | 2006-11-27 | 2008-06-05 | Nikon Corporation | Optical element, exposure unit utilizing the same and process for device production |
| EP2155932A2 (de) * | 2007-05-31 | 2010-02-24 | Carl Zeiss SMT AG | Verfahren zur herstellung eines optischen elementes mit hilfe von abformung, optisches element hergestellt nach diesem verfahren, kollektor und beleuchtungssystem |
| NL2003299A (en) * | 2008-08-28 | 2010-03-11 | Asml Netherlands Bv | Spectral purity filter and lithographic apparatus. |
| DE102009032779A1 (de) | 2009-07-10 | 2011-01-13 | Carl Zeiss Smt Ag | Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| EP2463693A3 (de) * | 2009-07-15 | 2013-02-20 | Carl Zeiss SMT GmbH | Mikrospiegelanordnung mit Beschichtung sowie Verfahren zu deren Herstellung |
| DE102009033511A1 (de) | 2009-07-15 | 2011-01-20 | Carl Zeiss Smt Ag | Mikrospiegelanordnung mit Anti-Reflexbeschichtung sowie Verfahren zu deren Herstellung |
| DE102009049640B4 (de) | 2009-10-15 | 2012-05-31 | Carl Zeiss Smt Gmbh | Projektionsobjektiv für eine mikrolithographische EUV-Projektionsbelichtungsanlage |
| EP2513686B1 (en) | 2009-12-15 | 2019-04-10 | Carl Zeiss SMT GmbH | Reflective optical element for euv lithography |
| DE102009054653A1 (de) | 2009-12-15 | 2011-06-16 | Carl Zeiss Smt Gmbh | Spiegel für den EUV-Wellenlängenbereich, Substrat für einen solchen Spiegel, Verwendung einer Quarzschicht für ein solches Substrat, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel oder einem solchen Substrat und Projetktionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| SG183528A1 (en) * | 2010-03-24 | 2012-10-30 | Asml Netherlands Bv | Lithographic apparatus and spectral purity filter |
| DE102011003357A1 (de) | 2011-01-31 | 2012-08-02 | Carl Zeiss Smt Gmbh | Spiegel für den EUV-Wellenlängenbereich, Herstellungsverfahren für einen solchen Spiegel, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| DE102011075579A1 (de) * | 2011-05-10 | 2012-11-15 | Carl Zeiss Smt Gmbh | Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Spiegel |
| DE102011084117A1 (de) * | 2011-10-07 | 2013-04-11 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für den EUV-Wellenlängenbereich, Verfahren zur Erzeugung und zur Korrektur eines solchen Elements, Projektionsobjektiv für die Mikrolithographie mit einem solchen Element und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| DE102011085358B3 (de) | 2011-10-28 | 2012-07-12 | Carl Zeiss Smt Gmbh | Optische Anordnung für die EUV-Lithographie und Verfahren zum Konfigurieren einer solchen optischen Anordnung |
| DE102012202675A1 (de) | 2012-02-22 | 2013-01-31 | Carl Zeiss Smt Gmbh | Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithografie mit einer derartigen abbildenden Optik |
| DE102013215541A1 (de) * | 2013-08-07 | 2015-02-12 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
| DE102014219755A1 (de) * | 2013-10-30 | 2015-04-30 | Carl Zeiss Smt Gmbh | Reflektives optisches Element |
| DE102014204660A1 (de) | 2014-03-13 | 2015-09-17 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
| DE102015213249A1 (de) | 2015-07-15 | 2017-01-19 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen eines Spiegels, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
-
2015
- 2015-07-15 DE DE102015213253.6A patent/DE102015213253A1/de active Pending
-
2016
- 2016-07-07 WO PCT/EP2016/066178 patent/WO2017009185A1/de not_active Ceased
- 2016-07-07 JP JP2018501301A patent/JP6814195B2/ja active Active
- 2016-07-07 EP EP16741264.2A patent/EP3323022A1/de active Pending
-
2018
- 2018-01-15 US US15/871,926 patent/US10331048B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10331048B2 (en) | 2019-06-25 |
| US20180217507A1 (en) | 2018-08-02 |
| EP3323022A1 (de) | 2018-05-23 |
| JP2018522281A (ja) | 2018-08-09 |
| WO2017009185A1 (de) | 2017-01-19 |
| DE102015213253A1 (de) | 2017-01-19 |
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