JP6799393B2 - Wafer mounting mechanism with heater and film forming equipment - Google Patents

Description

The present invention relates to a wafer mounting mechanism with a heater and a film forming apparatus.

For example, in a film forming apparatus that performs a film forming process on a semiconductor wafer (hereinafter, simply referred to as a wafer), a thin film is formed on the surface of the wafer by using a chemical vapor deposition (CVD) method, an epitaxial growth method, or the like. .. The film forming apparatus is equipped with a heater in which a stage on which the wafer is placed and a heater for heating the wafer placed on the mounting surface of the stage are integrated in a decompressable chamber (decompression chamber). It is equipped with a wafer mounting mechanism (susceptor).

In the wafer mounting mechanism with a heater, a plurality of heater coils (heating resistors) are arranged concentrically or spirally in the radial direction of the stage on the back surface of the stage to uniformly heat the wafer. However, in the conventional wafer mounting mechanism with a heater, the temperature on the outer peripheral side of the wafer is lower than that on the inner peripheral side due to heat dissipation from the outer peripheral portion (side surface) of the stage, and the temperature distribution in the wafer plane is poor. There was a problem that it became uniform.

Therefore, it has been proposed to add a heater coil to the outer peripheral portion of the stage and heat the outer peripheral side of the stage with the added heater coil to make the temperature distribution in the surface of the wafer uniform (Patent Document 1). See.).

Japanese Unexamined Patent Publication No. 2008-060245

However, in the conventional wafer mounting mechanism with a heater, heat is dissipated through the electrode portions that supply electric power to a plurality of heater coils. Therefore, simply adding the heater coils to the outer peripheral portion of the stage is enough to add the heater coils to the above-mentioned wafer surface. It was difficult to solve the problem that the temperature distribution inside was non-uniform.

One aspect of the present invention has been proposed in view of such conventional circumstances, and is a wafer mounting mechanism with a heater capable of making the temperature distribution in the plane of the wafer more uniform, and with such a heater. One of the purposes is to provide a film forming apparatus equipped with a wafer mounting mechanism.

[1] The wafer mounting mechanism with a heater according to one aspect of the present invention heats a stage on which a wafer is mounted and a wafer provided on the stage and mounted on the mounting surface of the stage. A heater-equipped wafer mounting mechanism including a heater, wherein the stage has a top plate forming a previously described mounting surface, and the heater is a surface of the top plate opposite to the previously described mounting surface. A plurality of first heater coils arranged in the above, and a plurality of electrode portions electrically connected to the plurality of first heater coils and arranged side by side along the inner peripheral surface of the side skirt. The first heater coil has a second heater coil arranged on the outer peripheral side of the first heater coil, and the plurality of first heater coils are supplied with electric power through the plurality of electrode portions. The second heater coil generates heat so that the heat generation distribution in the plane of the above-mentioned mounting surface becomes uniform, and the second heater coil generates heat at a position where the plurality of electrode portions are arranged rather than between each of the plurality of electrode portions. By generating heat so that the amount is relatively high, the heat generation distribution in the circumferential direction differs depending on the arrangement of the plurality of electrode portions.

[ 2 ] In the wafer mounting mechanism with a heater according to the above [ 1 ], the second heater coil is a linear heat generating resistor arranged along the circumferential direction of the second heater coil, and is formed of the plurality of electrode portions. It is characterized by having a shape in which the cross-sectional area of the portion corresponding to each position where the plurality of electrode portions are arranged is smaller than that between the respective electrodes.

[ 3 ] In the wafer mounting mechanism with a heater according to the above [1] or [2] , the stage has a side skirt extending from the periphery of the top plate toward the side opposite to the previously described mounting surface. However, the second heater coil is characterized in that it is arranged on the inner peripheral surface of the side skirt.

[ 4 ] In the wafer mounting mechanism with a heater according to any one of the above [1] to [3] , the outer peripheral portion of the top plate has an opening at a position corresponding to each of the plurality of electrode portions. Alternatively, it is characterized by having a notch.
[5] In the wafer mounting mechanism with a heater according to the above [3], the side skirt is characterized by having an opening or a notch at a position corresponding to each of the plurality of electrode portions.

[6] In the wafer mounting mechanism with a heater according to any one of [1] to [5], the plurality of first heater coils are concentric circles arranged side by side in the radial direction of the top plate. It is a shaped or spiral heat generating resistor, and is characterized by having a shape in which the interval gradually narrows or the cross-sectional area becomes smaller from the inner peripheral side to the outer peripheral side of the top plate.

[7] In the wafer mounting mechanism with a heater according to any one of [1] to [6], the heater is a wafer mounted on the mounting surface of the stage at 600 to 2000 ° C. It is characterized by heating.

[8] The film forming apparatus according to one aspect of the present invention is a film forming apparatus that performs a film forming process on a wafer, and is equipped with a heater according to any one of the above [1] to [7]. It is characterized by being provided with a wafer mounting mechanism.

As described above, according to one aspect of the present invention, a wafer mounting mechanism with a heater capable of making the temperature distribution in the plane of the wafer more uniform, and a film formation provided with such a wafer mounting mechanism with a heater. It is possible to provide the device.

It is sectional drawing which shows the schematic structure of the film forming apparatus provided with the wafer mounting mechanism with a heater which concerns on one Embodiment of this invention. It is a perspective view which shows the structure of the wafer mounting mechanism with a heater shown in FIG. It is sectional drawing of the rotating shaft by the line segment XX'shown in FIG. It is a perspective view which shows another structural example of the wafer mounting mechanism with a heater which concerns on one Embodiment of this invention. An oblique view showing another configuration example of the wafer mounting mechanism with a heater according to an embodiment of the present invention. As a first embodiment, it is a graph which shows the result of having measured the in-plane temperature distribution of the wafer in the wafer mounting mechanism with a heater. As a second embodiment, it is a graph which shows the result of having measured the outer peripheral temperature distribution of the wafer in the wafer mounting mechanism with a heater.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
In the drawings used in the following description, in order to make each component easier to see, the scale of the dimensions may be different depending on the component, and the number and dimensional ratio of each component are the same as the actual ones. Is not limited.

As an embodiment of the present invention, for example, the film forming apparatus 100 provided with the wafer mounting mechanism 1 with a heater shown in FIGS. 1 to 3 will be described. FIG. 1 is a cross-sectional view showing a schematic configuration of a film forming apparatus 100 provided with a wafer mounting mechanism 1 with a heater. FIG. 2 is a perspective view showing the configuration of the wafer mounting mechanism 1 with a heater. FIG. 3 is a cross-sectional view of the rotating shaft 12 by the line segment XX'shown in FIG.

The film forming apparatus 100 of the present embodiment performs a film forming process on a semiconductor wafer (hereinafter, simply referred to as a wafer) W by using, for example, a CVD method or an epitaxial growth method to form a thin film on the surface of the wafer W. To do.

Specifically, the film forming apparatus 100 includes the wafer mounting mechanism 1 with a heater of the present embodiment in a chamber (decompression chamber) 101 capable of depressurizing. The wafer mounting mechanism 1 with a heater is called a susceptor, and includes a rotary stage 2 on which the wafer W is mounted and a heater 3 that heats the wafer W mounted on the mounting surface 2a of the rotary stage 2. , The electrostatic chuck 4 that attracts the wafer W mounted on the mounting surface 2a of the rotary stage 2, the power supply unit 5 that supplies power to the heater 3 and the electrostatic chuck 4, and the rotary stage 2 are mounted. Power control that controls the power supplied from the power supply unit 5 to the heater 3 based on the temperature measurement unit 6 that measures the temperature of the wafer W placed on the surface 2a and the temperature measured by the temperature measurement unit 6. It is roughly provided with a part 7.

The rotary stage 2 has a disk-shaped top plate 8 forming the mounting surface 2a and a cylindrical side skirt 9 extending from the periphery of the top plate 8 toward the opposite side (downward) of the mounting surface 2a. And a disk-shaped bottom plate 10 that closes the side (lower surface) of the side skirt 9 opposite to the top plate 2.

For the top plate 8, the side skirt 9, and the bottom plate 10, for example, insulating members having excellent heat resistance and corrosion resistance such as alumina ceramics, aluminum nitride ceramics, carbon ceramics, and quartz are used. Specifically, in the present embodiment, graphite, which is a carbon-based ceramic, is used for the integrally formed top plate 8 and side skirt 9, and quartz is used for the bottom plate 10. Further, a disk-shaped heat insulating material 11 made of, for example, quartz is arranged on the upper surface of the bottom plate 10.

The side skirt 9 and the bottom plate 10 are not limited to those formed integrally, but may be formed separately. Further, the shape of the side skirt 9 is not limited to the above-mentioned cylindrical shape, and may have a tapered shape whose diameter is gradually increased downward.

The rotary stage 2 has a hollow cylindrical rotary shaft 12 in which a plurality of through holes 12a to 12c penetrating in the axial direction are formed. The rotary shaft 12 projects downward from the center of the lower surface of the bottom plate 10 and is rotatably supported via a rotary vacuum seal 13 arranged on the lower surface of the chamber 101 while penetrating the chamber 101. A magnetic fluid seal is used for the rotary vacuum seal 13. Further, the rotary shaft 12 is connected to the drive motor 15 via a vacuum flange 14 attached to the lower end portion thereof. An insulating material such as ceramics is used for the vacuum flange 14. As a result, the rotary stage 2 can rotate in the circumferential direction by the drive motor 15 rotationally driving the rotary shaft 12 during film formation.

The wafer W placed on the mounting surface 2a of the rotary stage 2 is heated by the heater 3 at a temperature of 600 to 2000 ° C. at the time of film formation. The rotating shaft 12 is excellent in heat resistance and corrosion resistance of, for example, ceramics and glass so as to be able to withstand such high temperatures and not to be corroded by reactive gases such as H ₂ , HCl and Cl _2. Insulation member is used.

Specifically, as the glass, for example, quartz (SiO ₂ ) glass, sapphire (Al ₂ O ₃ ) glass, or the like can be used. On the other hand, as ceramics, for example, oxide-based ceramics such as alumina (Al ₂ O ₃ ) and zirconia (ZrO ₂ ), aluminum nitride (AlN), silicon nitride (Si ₃ N ₄ ), and silicon carbide (SiC). , Boron nitride (BN), non-oxide ceramics such as carbon ceramics and the like can be used.

Among the rotating shafts 12, it is preferable to use one containing quartz or silicon nitride as a main agent. In this embodiment, silicon nitride is used for the rotating shaft 12.

Further, a cooling mechanism 16 for cooling the rotating shaft 12 is provided on the outside of the chamber 101. The cooling mechanism 16 uses a cooling fan that is arranged below the chamber 101 and blows air toward the rotating shaft 12 during film formation. The cooling mechanism 16 is not limited to the air-cooled cooling mechanism such as the cooling fan described above, and a water-cooled cooling mechanism may be used. It is also possible to use a cooling mechanism such as a piezo (Peltier) element.

The heater 3 includes a plurality of first heater coils 17 arranged on a surface (lower surface) opposite to the mounting surface 2a of the top plate 8, and a second heater arranged on the inner peripheral surface of the side skirt 9. It has a coil 18 and a plurality of electrode portions 19 arranged side by side along the inner peripheral surface of the side skirt 9.

The plurality of first heater coils 17 are concentric or spiral heat generating resistors, and are arranged side by side at predetermined intervals in the radial direction of the top plate 8. The second heater coil 18 is a linear heat generating resistor, and is arranged in a ring shape along the circumferential direction of the side skirt 9. For the heat generating resistor forming the first heater coil 17 and the second heater coil 18, for example, a carbon material in which a thin film of boron nitride (PBN) or pyrolytic graphite (PG) is formed on the surface by a CVD method. A conductive member having excellent heat resistance such as (C) is used. Further, as the heat generating resistor, a carbon material (C) having a low resistivity having a volume resistivity of 4.8 to 11 μΩm is used.

The plurality of electrode portions 19 are arranged side by side at predetermined intervals in the circumferential direction of the side skirt 9 in a state of being electrically connected to the plurality of first heater coils 17. Further, each electrode portion 19 is extended toward the rotating shaft 12.

In the heater 3, electric power is supplied to the plurality of first heater coils 17 and the second heater coils 18 via the plurality of electrode portions 19 at the time of film formation. As a result, the wafer W on which the mounting surface 2a is mounted is heated while generating heat of these heater coils 17 and 18.

The electrostatic chuck 4 is electrically connected to a pair of internal electrodes 20a and 20b embedded in a dielectric layer on the upper surface (mounting surface 2a) of the top plate 8 and a pair of internal electrodes 20a and 20b. It has a pair of electrode portions 21a and 21b that are stretched toward the rotating shaft 12 side.

In the electrostatic chuck 4, a voltage is applied between the pair of internal electrodes 20a and 20b via the pair of electrode portions 21a and 21b during film formation. As a result, a reverse voltage is induced on the surface of the wafer W, and the wafer W is adsorbed by the Coulomb force, Johnson-Labeck force, gradient force, etc. acting between the two.

The power supply unit 5 has a heater power supply 22 that supplies power to the heater 3, and an electrostatic chuck power supply 23 that supplies power to the electrostatic chuck 4. The heater power supply 22 is electrically connected to the heater 3 (specifically, the plurality of electrode portions 19) through the plurality of first wirings 24a extending to the outside of the chamber 101 through the through holes 12a of the rotary shaft 12. Is connected. The electrostatic chuck power supply 23 is the electrostatic chuck 4 (specifically, a pair of electrode portions) via a pair of second wirings 24b extending to the outside of the chamber 101 through a through hole 12b of the rotating shaft 12. It is electrically connected to 21a, 21b).

The temperature measuring unit 6 has a thermocouple 25 electrically connected to a pair of third wires 24c extending outward from the chamber 101 through the through hole 12c of the rotating shaft 12. The thermocouple 25 is provided so as to extend through the through hole 12c of the rotary shaft 12 to a position where it comes into contact with the top plate 8. The temperature measuring unit 6 measures the temperature (micro signal) of the wafer W mounted on the mounting surface 2a by the thermocouple 25, and supplies the measurement result to the power control unit 7.

The electric power control unit 7 controls the electric power supplied from the heater power supply 22 to the heater 3 so that the wafer W has a desired temperature based on the temperature measured by the temperature measuring unit 6.

By the way, in the wafer mounting mechanism 1 with a heater of the present embodiment, the plurality of first heater coils 17 have a shape in which the interval gradually becomes narrower or the cross-sectional area becomes smaller from the inner peripheral side to the outer peripheral side of the top plate 8. have. As a result, the plurality of first heater coils 17 generate heat so that the heat generation distribution in the mounting surface 2a becomes uniform.

On the other hand, the second heater coil 18 has a shape in which the cross-sectional area (width or thickness) of the portion corresponding to each position where the plurality of electrode portions 19 are arranged is smaller than that between the plurality of electrode portions 19. ing. Specifically, in the present embodiment, the thickness of the second heater coil 18 is constant, and the width of the portion corresponding to each position where the plurality of electrode portions 19 are arranged is smaller than that between each of the plurality of electrode portions 19. It has become. As a result, the second heater coil 18 generates heat so that the amount of heat generated at the position where the plurality of electrode portions 19 are arranged is relatively higher than that between each of the plurality of electrode portions 19.

As described above, in the wafer mounting mechanism 1 with a heater of the present embodiment, the second heater coils 18 having different heat generation distributions in the circumferential direction of the side skirt 9 are arranged according to the arrangement of the plurality of electrode portions 19. It is composed.

In the case of this configuration, the second heater coil 18 generates heat so that the amount of heat generated at the position where the plurality of electrode portions 19 are arranged is relatively higher than that between the plurality of electrode portions 19, as described above. While compensating for the amount of heat radiated from the outer peripheral portion (side surface) of the rotating stage 2 and the amount of heat radiated through the plurality of electrode portions 19, the uniformity of heat generation distribution in the surface of the mounting surface 2a is improved. It is possible to increase.

Therefore, in the wafer mounting mechanism 1 with a heater of the present embodiment, the temperature on the outer peripheral side of the wafer W is prevented from lowering than that on the inner peripheral side, and the temperature is kept in the plane of the wafer W mounted on the mounting surface 2a. It is possible to make the temperature distribution more uniform.

Further, in the wafer mounting mechanism 1 with a heater of the present embodiment, in order to make the heat generation distribution in the mounting surface 2a uniform, in addition to the above configuration, the side skirt 9 has a plurality of openings or notches (this). In the embodiment, the opening) 26 is provided. The opening 26 is provided at a position corresponding to each of the plurality of electrode portions 19.

In the case of this configuration, in the side skirt 9, heat dissipation from each position where the plurality of openings 26 are provided can be suppressed to be relatively lower than between each of the plurality of openings 26. Thereby, together with the second heater coil 18 described above, it is possible to improve the uniformity of the heat generation distribution while adjusting the heat generation distribution in the surface of the mounting surface 2a.

Therefore, in the wafer mounting mechanism 1 with a heater of the present embodiment, by providing such a plurality of openings (or notches) 26 in the side skirt 9, the temperature distribution in the plane of the wafer W is further made uniform. It is possible.

The present invention is not necessarily limited to that of the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the wafer mounting mechanism 1 with a heater, as shown in FIG. 4, the above-mentioned opening 26 (or notch) may be omitted.

Further, in the wafer mounting mechanism 1 with a heater, as shown in FIG. 5, it is possible to omit the side skirt 9 constituting the rotary stage 2. In this case, the second heater coil 18 is arranged on the outer peripheral side of the first heater coil 17 arranged on the lower surface of the top plate 8.

Also in the case of this configuration, the second heater coil 18 generates heat so that the amount of heat generated at the position where the plurality of electrode portions 19 are arranged is relatively higher than that between the plurality of electrode portions 19, as described above. To improve the uniformity of heat generation distribution in the surface of the mounting surface 2a while supplementing the amount of heat radiated from the outer peripheral portion of the rotating stage 2 and the amount of heat radiated through the plurality of electrode portions 19. Is possible.

Hereinafter, the effects of the present invention will be made clearer by examples. The present invention is not limited to the following examples, and can be appropriately modified and implemented without changing the gist thereof.

(First Example)
In the first embodiment, as an example, a wafer mounting mechanism with a heater having the same configuration as the wafer mounting mechanism 1 with a heater, and as a comparative example, an opening from the configuration of the wafer mounting mechanism 1 with a heater. Wafer mounting mechanism with heater in which 26 is omitted and a second heater coil having a constant cross-sectional area (width and thickness) is arranged along the circumferential direction of the side skirt 9 instead of the second heater coil 18. And prepared.

Regarding the heater-equipped wafer mounting mechanism of these examples and the heater-equipped wafer mounting mechanism of the comparative example, the in-plane temperature distribution (in-plane temperature distribution) of the wafer mounted on the mounting surface while heating the stage by the heater. ) Was measured by simulation. The measurement results are shown in FIGS. 6 (a) and 6 (b). Note that FIG. 6A is a graph showing the results of measuring the in-plane temperature distribution of the wafer in the wafer mounting mechanism with a heater of the embodiment. FIG. 6B is a graph showing the results of measuring the in-plane temperature distribution of the wafer in the wafer mounting mechanism with a heater of the comparative example.

As shown in FIGS. 6A and 6B, the heater-equipped wafer mounting mechanism of the embodiment has a temperature difference between the inner peripheral side and the outer peripheral side of the wafer as compared with the heater-equipped wafer mounting mechanism of the comparative example. Is small, and it can be seen that the in-plane temperature distribution of the wafer is more uniform.

(Second Example)
In the second embodiment, the wafer mounting mechanism with a heater of the above embodiment and the wafer mounting mechanism with a heater of the comparative example were mounted on the mounting surface of the stage while heating the stage with the heater. The temperature distribution (outer circumference temperature distribution) at the outer periphery of the wafer was measured by simulation. The measurement results are shown in FIGS. 7 (a) and 7 (b). Note that FIG. 7A is a graph showing the results of measuring the outer peripheral temperature distribution of the wafer in the wafer mounting mechanism with a heater of the embodiment. FIG. 7B is a graph showing the results of measuring the outer peripheral temperature distribution of the wafer in the wafer mounting mechanism with a heater of the comparative example.

As shown in FIGS. 7A and 7B, the heater-equipped wafer mounting mechanism of the embodiment has a smaller temperature difference in the circumferential direction at the outer peripheral portion of the wafer than the heater-equipped wafer mounting mechanism of the comparative example. It can be seen that the temperature distribution on the outer circumference of the wafer is more uniform.

Further, as a reference example, regarding a wafer mounting mechanism in which the ratio of the maximum width to the minimum width of the second heater coil is 3: 1, the outer circumference of the wafer mounted on the mounting surface while heating the stage by the heater. The temperature distribution was measured by simulation. The measurement result is shown in FIG. 7 (c).

In the wafer mounting mechanism with a heater of the embodiment, the ratio of the maximum width to the minimum width of the second heater coil is 2: 1. Further, in the wafer mounting mechanism with a heater of the comparative example, the ratio of the maximum width to the minimum width of the second heater coil is 1: 1.

As shown in FIG. 7 (c), in the wafer mounting mechanism with a heater of the reference example, the temperature difference in the circumferential direction at the outer peripheral portion of the wafer is large, with respect to the graphs shown in FIGS. 7 (a) and 7 (b). It can be seen that the positions of the high temperature part and the low temperature part are reversed.

From this, it can be seen that the outer peripheral temperature distribution of the wafer can be adjusted by changing the ratio (ratio of cross-sectional area) between the maximum width and the minimum width of the second heater coil. Then, it was clarified that it is possible to sufficiently improve the uniformity in the in-plane temperature distribution and the outer peripheral temperature distribution of the wafer by performing such adjustment.

1 ... Wafer mounting mechanism with heater 2 ... Stage 2a ... Mounting surface 3 ... Heater 4 ... Electrostatic chuck 5 ... Power supply unit 6 ... Temperature measurement unit 7 ... Power control unit 8 ... Top plate 9 ... Side plate 10 ... Bottom Plate 11 ... Insulation material 12 ... Rotating shaft 12a to 12c ... Through hole 13 ... Rotary vacuum seal 14 ... Vacuum flange 15 ... Drive motor 16 ... Cooling fan 17 ... First heater coil 18 ... Second heater coil 19 ... Electrode 20a, 20b ... Internal electrodes 21a, 21b ... Electrodes 22 ... Heater power supply 23 ... Electrostatic chuck power supply 24a ... First wiring 24b ... Second wiring 24c ... Third wiring 25 ... Thermoelectric pair 26 ... Opening 100 ... film forming apparatus 101 ... chamber W ... wafer

Claims (8)

The stage on which the wafer is placed and
A wafer mounting mechanism with a heater, which is provided on the stage and includes a heater for heating the wafer mounted on the mounting surface of the stage.
The stage has a top plate that forms the previously described mounting surface.
The heater is electrically connected to a plurality of first heater coils arranged on a surface of the top plate opposite to the previously described mounting surface, and the plurality of first heater coils, and the top. It has a plurality of electrode portions arranged side by side along the outer circumference of the plate, and a second heater coil arranged on the outer peripheral side of the first heater coil.
The plurality of first heater coils generate heat so that the heat generation distribution in the plane of the above-mentioned mounting surface becomes uniform by supplying electric power through the plurality of electrode portions.
The second heater coil generates heat so that the amount of heat generated at the position where the plurality of electrode portions are arranged is relatively higher than that between the plurality of electrode portions, thereby causing the plurality of electrode portions to generate heat . A wafer mounting mechanism with a heater, characterized in that the heat generation distribution in the circumferential direction differs depending on the arrangement. The second heater coil is a linear heat generating resistor arranged along the circumferential direction thereof, and corresponds to each position where the plurality of electrode portions are arranged rather than between each of the plurality of electrode portions. The wafer mounting mechanism with a heater according to claim 1 , wherein the wafer has a shape in which the cross-sectional area of the portion is reduced. The stage has side skirts that extend from the perimeter of the top plate toward the side opposite to the previously described surface.
The wafer mounting mechanism with a heater according to claim 1 or 2 , wherein the second heater coil is arranged on an inner peripheral surface of the side skirt. The wafer with a heater according to any one of claims 1 to 3 , wherein the outer peripheral portion of the top plate has an opening or a notch at a position corresponding to each of the plurality of electrode portions. Placement mechanism. Before SL side skirts, the heater with the wafer mounting mechanism of claim 3, characterized in that it comprises an opening or notch at a position corresponding to between the said plurality of electrode portions. The plurality of first heater coils are concentric or spiral heat-generating resistors arranged side by side in the radial direction of the top plate, and the intervals are gradually increased from the inner peripheral side to the outer peripheral side of the top plate. The wafer mounting mechanism with a heater according to any one of claims 1 to 5, wherein the wafer has a shape that becomes narrower or has a smaller cross-sectional area. The heater-equipped wafer mounting mechanism according to any one of claims 1 to 6, wherein the heater heats a wafer mounted on the mounting surface of the stage at 600 to 2000 ° C. A film forming apparatus that performs film forming processing on a wafer.
A film forming apparatus comprising the wafer mounting mechanism with a heater according to any one of claims 1 to 7.

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