KR20190067356A - Film forming apparatus - Google Patents

Film forming apparatus Download PDF

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Publication number
KR20190067356A
KR20190067356A KR1020170167221A KR20170167221A KR20190067356A KR 20190067356 A KR20190067356 A KR 20190067356A KR 1020170167221 A KR1020170167221 A KR 1020170167221A KR 20170167221 A KR20170167221 A KR 20170167221A KR 20190067356 A KR20190067356 A KR 20190067356A
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South Korea
Prior art keywords
wafer
heater
chamber
loading surface
rotating shaft
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KR1020170167221A
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Korean (ko)
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카주유키 토미자와
마사시 키쿠치
미치오 이시카와
나오키 타카하시
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삼성전자주식회사
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Priority to KR1020170167221A priority Critical patent/KR20190067356A/en
Priority to US15/847,392 priority patent/US20190177841A1/en
Publication of KR20190067356A publication Critical patent/KR20190067356A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/463—Cooling of the substrate
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
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    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract

Provided is a film forming apparatus which is able to deal with a superhigh-temperature film forming process. According to the present invention, the film forming apparatus, which forms a film in a wafer inside a chamber, comprises: a rotation stage which has a loading surface, on which the wafer is loaded, to rotate and drive in a circumferential direction; a heater installed on the rotation stage to heat the wafer loaded on the loading surface; and a power supply unit which supplies electric power to the heater. The rotation stage has a rotary shaft supported to be able to rotate by penetrating the chamber. The power supply unit has a wiring electrically connected to the heater to be extended towards the outside of the chamber through a penetrating hole penetrating the rotary shaft in an axial direction. The heater heats the wafer loaded on the loading surface of the rotation stage by temperatures of 600-2000°C. The rotary shaft is made of ceramics or glass having a heat resistance against high temperatures.

Description

막 형성 장치{FILM FORMING APPARATUS}[0001] FILM FORMING APPARATUS [0002]

본 발명은 막 형성 장치에 관한 것이다.The present invention relates to a film forming apparatus.

예를 들면, 반도체 웨이퍼(이하, 단지 웨이퍼라고 한다.)에 막을 형성하는 장치는 화학 기상 성장(CVD) 법이나 에피택셜 성장법 등을 이용하여, 감압 가능한 챔버(성막실) 내에 제공된 웨이퍼를 가열하면서 웨이퍼의 표면 상에 박막을 형성한다.For example, an apparatus for forming a film on a semiconductor wafer (hereinafter, simply referred to as a wafer) is a method for heating a wafer provided in a chamber capable of decompression (film deposition chamber) using a chemical vapor deposition (CVD) method, an epitaxial growth method, Thereby forming a thin film on the surface of the wafer.

또한, 막 형성 장치는 막형성 시에 챔버의 외측에 설치된 적외선 램프로 석영 등 적외선의 투과율의 좋은 유리로 된 윈도우를 통해 챔버 내의 웨이퍼에 적외선을 조사한다. 이것에 의해 웨이퍼를 간접적으로 가열한다.Further, the film forming apparatus irradiates infrared rays to a wafer in a chamber through a window made of glass having a high transmittance of infrared rays such as quartz with an infrared lamp installed outside the chamber at the time of film formation. This indirectly heats the wafer.

그렇지만, 이러한 간접적인 웨이퍼의 가열 방법에서는, 챔버 내에서 생성된 반응 생성물 등이 윈도우에 퇴적하는 것에 의해 적외선의 투과율이 변화되어, 웨이퍼의 가열 온도에 변동이 발생한다. 또한, 웨이퍼의 면 내에서의 온도 분포가 불균일하게 되는 것에 의해, 안정되고 균일한 막을 형성하는 것이 곤란해진다. 이 때문에, 웨이퍼를 간접적으로 가열하는 히터를 챔버 내에 배치하는 방식의 시도가 있다.However, in this indirect heating method of the wafer, the transmittance of infrared rays changes due to deposition of reaction products or the like generated in the chamber in the window, and the heating temperature of the wafer changes. Further, since the temperature distribution in the plane of the wafer becomes non-uniform, it becomes difficult to form a stable and uniform film. For this reason, there is an attempt to dispose a heater for heating the wafer indirectly in the chamber.

또한, CVD법에 의한 막 형성 장치에서는, 막 형성 속도나 형성된 박막의 특성이 가스의 흐름에 의존하는 경우가 많기 때문에, 박막의 두께나 그 물리적 특성 및 화확적 특성의 균일성을 향상시키기 위해서, 웨이퍼를 면내에서 회전시키면서 막을 형성한다. 이 때문에, 막형성 장치는 웨이퍼가 로딩되는 로딩 면을 가지고 원주방향으로 회전 구동되는 회전 스테이지, 회전 스테이지에 설치되어 로딩 면에 로딩된 웨이퍼를 가열하는 히터, 및 로딩 면에 로딩된 웨이퍼를 흡착하는 정전척을 갖는 서스셉터로 불리는 기구(웨이퍼 로딩 기구)를 포함한다(예를 들면, 특허 문헌 1을 참조).Further, in the film forming apparatus using the CVD method, the film formation rate and the characteristics of the formed film often depend on the gas flow. Therefore, in order to improve the thickness, physical properties, and uniformity of the chemical characteristics of the film, The wafer is rotated in the plane to form a film. To this end, the film-forming apparatus includes a rotating stage that is rotationally driven in a circumferential direction with a loading surface on which the wafer is loaded, a heater that is mounted on the rotating stage to heat the wafer loaded on the loading surface, (Wafer loading mechanism) referred to as a susceptor having an electrostatic chuck (see, for example, Patent Document 1).

그렇지만, 일반적으로 웨이퍼로 사용되는 실리콘(Si) 기판은 경량이기 때문에, 회전시의 충격이나 가스의 흐름 등에 의해 로딩 면 상에서 움직일 수 있다. 이러한 로딩 면에서의 웨이퍼의 위치 차이는 파티클이 발생하는 원인이 되거나 심할 때에는 웨이퍼의 반송 에러의 원인이 된다. 이 때문에, 스퍼터링 장치나 에칭 장치 등에서 사용되는 정전척을 이용하여 로딩 면에 로딩된 웨이퍼를 흡착하여, 막형성 시에 회전하는 웨이퍼를 안정되어 보관 유지할 수 있다.However, since the silicon (Si) substrate generally used as a wafer is lightweight, it can move on the loading surface due to an impact or gas flow during rotation. The difference in the position of the wafer on the loading surface may cause particles to be generated or cause a carrier error of the wafer in severe cases. Therefore, the wafer loaded on the loading surface can be adsorbed by using the electrostatic chuck used in the sputtering apparatus, the etching apparatus, and the like, and the rotating wafer can be stably stored at the time of film formation.

한편, 히터에 의한 복사로 웨이퍼를 간접적으로 가열하기 위해, 히터에 의한 가열 온도를 소망하는 가열 온도보다 높게 설정할 필요가 있다. 그렇지만, CVD법에 의한 막 형성 장치에서는, 가스의 열분해로 막을 형성하기 때문에, 웨이퍼 보다 고온이 되는 히터에 의해 많은 막(분해 생성물)이 부착하게 된다. 이 경우도, 파티클이 발생하는 원인이 되기 때문에, 세세한 가스 클리닝이 필요하여 생산성의 저하를 부르게 된다.On the other hand, in order to indirectly heat the wafer by radiation by the heater, it is necessary to set the heating temperature by the heater higher than a desired heating temperature. However, in the film forming apparatus using the CVD method, since a film is formed by thermal decomposition of gas, many films (decomposition products) are adhered by a heater which is higher in temperature than the wafer. In this case as well, since particles are generated, fine gas cleaning is required and the productivity is lowered.

게다가, 로딩 면에 로딩된 웨이퍼가 스테이지로부터의 복사로 가열되기 때문에, 히터, 스테이지, 웨이퍼의 순서로 가열 온도가 높아진다. 따라서, 막 형성 시에 필요한 온도까지 웨이퍼를 가열하기 위해서는 히터의 가열 온도를 더욱 높게 설정해 둘 필요가 있다.In addition, since the wafer loaded on the loading surface is heated by the radiation from the stage, the heating temperature increases in the order of the heater, the stage, and the wafer. Therefore, in order to heat the wafer to a temperature required for film formation, it is necessary to set the heating temperature of the heater to a higher value.

이러한 문제를 해결하기 위해서, 스테이지의 안쪽에 복수의 히터 코일들(발열 저항체)을 배치하여, 웨이퍼에 의해 가까운 위치에서 가열한다. 그렇지만, 일반적으로 CVD법에 의한 막 형성 프로세스에서는, 웨이퍼를 600℃ 이상으로 가열할 필요가 있다. 이 경우, 히터나 정전척 등과 전기적으로 접속되는 배선이 고온에 노출되게 되어 히터나 정전척을 정상적으로 동작시키는 것이 매우 곤란해진다.In order to solve this problem, a plurality of heater coils (heat generating resistors) are arranged on the inner side of the stage and heated at a position close to the wafer. However, in general, in the film forming process by the CVD method, it is necessary to heat the wafer to 600 DEG C or more. In this case, the wiring electrically connected to the heater or the electrostatic chuck is exposed to a high temperature, and it becomes very difficult to normally operate the heater or the electrostatic chuck.

[특허문헌 1] 特開２０１１－２３３９２９ 公報[Patent Document 1] JP-A-2011-233929

본 발명의 하나의 양태는 이러한 사정을 감안하여 제안된 것으로, 초고온의 막 형성 프로세스에 사용 가능한 막 형성 장치를 제공하는 것을 목적으로 한다.One aspect of the present invention has been proposed in view of such circumstances, and it is an object of the present invention to provide a film forming apparatus usable for a film forming process at an ultra-high temperature.

본 발명이 해결하고자 하는 과제는 이상에서 언급한 과제에 제한되지 않으며, 언급되지 않은 또 다른 과제들은 아래의 기재로부터 당업자에게 명확하게 이해될 수 있을 것이다.The problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

본 발명의 하나의 양태와 관련되는 막 형성 장치는 챔버 내의 웨이퍼에 막을 형성하는 막 형성 장치이다. 상기 막 형성 장치는 상기 웨이퍼가 로딩되는 로딩 면을 갖고 원주방향으로 회전 구동되는 회전 스테이지, 상기 회전 스테이지에 설치되어 상기 로딩 명에 로딩된 웨이퍼를 가열하는 히터, 및 상기 히터에 전력을 공급하는 전력 공급부를 포함한다. 상기 회전 스테이지는 상기 챔버를 관통한 상태로 회전 가능하도록 지지되는 회전 샤프트를 포함하고, 상기 전력 공급부는 상기 히터와 전기적으로 접속되고 상기 회전 샤프트를 축선 방향으로 관통하는 관통공을 통해 상기 챔버의 외측으로 연장된 배선을 갖고, 상기 히터는 상기 회전 스테이지의 로딩 명에 로딩된 웨이퍼를 600℃ 내지 2000℃의 온도로 가열하고, 상기 회전 샤프트는 상기 온도에 대해서 내열성 및 내부식성을 가지는 세라믹스 또는 유리로 형성되는 것을 특징으로 한다.A film forming apparatus according to one aspect of the present invention is a film forming apparatus for forming a film on a wafer in a chamber. The film forming apparatus includes a rotating stage having a loading surface on which the wafer is loaded and rotated in a circumferential direction, a heater installed on the rotating stage for heating a wafer loaded on the loading table, And a supply section. Wherein the rotating stage includes a rotating shaft supported so as to be rotatable through the chamber, and the power supply unit is connected to the outside of the chamber through a through hole that is electrically connected to the heater and axially passes through the rotating shaft And the heater heats the wafer loaded in the loading name of the rotating stage to a temperature of 600 ° C to 2000 ° C, and the rotating shaft is made of ceramics or glass having heat resistance and corrosion resistance against the temperature Is formed.

상기 세라믹스는 질화 규소를 포함하는 것을 특징으로 한다.The ceramics are characterized by containing silicon nitride.

상기 유리는 석영 유리를 포함하는 것을 특징으로 한다.The glass is characterized in that it comprises quartz glass.

상기 챔버의 외측에 설치되어, 전기 회전 샤프트를 냉각하는 냉각 기구를 갖는 것을 특징으로 한다.And a cooling mechanism provided outside the chamber for cooling the electric rotating shaft.

상기 회전 스테이지에 설치되어, 상기 로딩 명에 로딩된 웨이퍼를 흡착하는 정전척을 갖고, 상기 전력 공급부는 상기 정전척과 전기적으로 접속된 배선을 가지고, 상기 회전 샤프트를 축선방향으로 관통하는 관통공을 통해 상기 챔버의 외측으로 연장되는 상기 배선을 개재하여 상기 정전척에 전력을 공급하는 것을 특징으로 한다.And an electrostatic chuck provided on the rotary stage for sucking a wafer loaded in the loading name, wherein the electric power supply unit has a wiring electrically connected to the electrostatic chuck, the through hole penetrating the rotating shaft in the axial direction And electric power is supplied to the electrostatic chuck via the wiring extending to the outside of the chamber.

상기 회전 스테이지에 설치되어, 상기 회전 스테이지의 로딩 면에 로딩된 웨이퍼의 온도를 측정하는 온도 측정부를 갖고, 상기 온도 측정부는 상기 회전 샤프트를 축선방향으로 관통하는 관통공을 통해 상기 챔버의 외측으로 연장되는 배선과 전기적으로 접속된 열전대를 가지는 것을 특징으로 한다.And a temperature measuring unit installed on the rotating stage for measuring the temperature of the wafer loaded on the loading surface of the rotating stage, wherein the temperature measuring unit extends outwardly of the chamber through a through hole penetrating the rotating shaft in the axial direction And a thermocouple electrically connected to the wiring.

이상과 같이, 본 발명의 하나의 양태에 의하면, 초고온의 막 형성 프로세스에 사용 가능한 막 형성 장치의 제공 가능하다.As described above, according to one embodiment of the present invention, it is possible to provide a film forming apparatus usable for a film forming process at an ultra-high temperature.

도 1은 본 발명의 일 실시 형태와 관련되는 막 형성 장치의 개략 구성을 나타내는 단면도이다.
도 2는 도 1에 도시된 선분 X－X＇에 의한 회전 샤프트의 단면도이다.1 is a cross-sectional view showing a schematic configuration of a film forming apparatus according to an embodiment of the present invention.
2 is a cross-sectional view of the rotating shaft according to the line segment X-X 'shown in Fig.

이하, 본 발명의 실시의 형태에 대해, 도면을 참조해 상세하게 설명한다.DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

덧붙여 이하의 설명으로 이용하는 도면에 있어서는, 각 구성요소를 보기 쉽게하기 위해 구성요소에 의해 치수의 축척을 다르게 하여는 것이 있기 때문에, 각 구성요소의 수나 치수 비율 등이 실제와 같은 것으로 한정되지 않을 수 있다.Incidentally, in the drawings used in the following description, since the scale of the dimensions is made different by the constituent elements in order to make each constituent element easy to see, the number of the constituent elements, the ratio of the dimensions, have.

본 발명의 일 실시 형태로서, 예를 들면 도 1 및 도 2에 도시된 서스셉터(1)를 갖는 막 형성 장치(100)에 대해 설명한다. 덧붙여, 도 1은 서스셉터(1)를 갖는 막 형성 장치(100)의 개략 구성을 나타내는 단면도이다. 도 2는 도 1에 도시된 선분 X－X＇에 의한 회전 샤프트(12)의 단면도이다.As one embodiment of the present invention, a film forming apparatus 100 having, for example, the susceptor 1 shown in Figs. 1 and 2 will be described. 1 is a cross-sectional view showing a schematic structure of a film forming apparatus 100 having susceptors 1. 2 is a cross-sectional view of the rotating shaft 12 taken along a line X-X 'shown in Fig.

본 실시 형태의 막 형성 장치(100)는, 예를 들면 화학 기상 성장법(CVD) 또는 에피택셜 성장법 등을 이용하여, 반도체 웨이퍼(이하, 단지 웨이퍼라고 한다.)(W)에 막을 형성하여, 웨이퍼(W)의 표면에 박막을 형성한다.The film forming apparatus 100 of the present embodiment forms a film on a semiconductor wafer W (hereinafter simply referred to as a wafer) by, for example, a chemical vapor deposition (CVD) method or an epitaxial growth method , A thin film is formed on the surface of the wafer W.

구체적으로, 막 형성 장치(100)는 감압 가능한 챔버(101) 내에 서스셉터(웨이퍼 로딩 기구)(1)를 갖는다. 서스셉터(1)는 웨이퍼(W)가 로딩되는 회전 스테이지(2), 회전 스테이지(2)의 로딩 면(2a) 상에 로딩된 웨이퍼(W)를 가열하는 히터(3), 회전 스테이지(2)의 로딩 면(2a) 상에 로딩된 웨이퍼(W)를 흡착하는 정전척(4), 히터(3)및 정전척(4)에 전력을 공급하는 전력 공급부(5), 회전 스테이지(2)의 로딩 면(2a) 상에 로딩된 웨이퍼(W)의 온도를 측정하는 온도 측정부(6), 및 온도 측정부(6)가 측정한 온도에 근거하여 전력 공급부(5)로부터 히터(3)에 공급되는 전력을 제어하는 전력 제어부(7)를 포함한다.Specifically, the film forming apparatus 100 has a susceptor (wafer loading mechanism) 1 in a decompressible chamber 101. The susceptor 1 includes a rotary stage 2 on which the wafer W is loaded, a heater 3 for heating the wafer W loaded on the loading surface 2a of the rotary stage 2, A heater 3 and a power supply unit 5 for supplying electric power to the electrostatic chuck 4, a rotary stage 2, and an electrostatic chuck 4. The electrostatic chuck 4 picks up the wafer W loaded on the loading surface 2a of the rotary stage 2, A temperature measuring section 6 for measuring the temperature of the wafer W loaded on the loading surface 2a of the heater 3 and a controller 5 for controlling the heater 3 from the power supply section 5 based on the temperature measured by the temperature measuring section 6. [ And a power control unit 7 for controlling power supplied to the power supply unit.

회전 스테이지(2)는 로딩 면(2a)을 형성하는 원판 모양의 탑 플레이트(8), 탑 플레이트(8)의 주위로부터 로딩 면(2a)과 반대측(하부)으로 향하여 연장된 원통 모양의 사이드 스커트(9), 및 사이드 스커트(9)의 탑 플레이트(2)와 반대측(아래쪽 면)을 폐쇄하는 원판 모양의 보텀 플레이트(10)를 포함한다.The rotating stage 2 includes a disc-shaped top plate 8 forming a loading surface 2a, a cylindrical side skirt extending from the periphery of the top plate 8 toward the loading side 2a, And a disc-shaped bottom plate 10 closing the side (lower surface) opposite to the top plate 2 of the side skirt 9.

탑 플레이트(8), 사이드 스커트(9) 및 보텀 플레이트(10)는, 예를 들면, 알루미나 세라믹스, 질화 알루미늄 세라믹스, 카본계 세라믹스, 석영 등의 내열성 및 내부식성이 뛰어난 절연부재로 형성될 수 있다. 구체적으로, 본 실시 형태에서는, 일체로 형성된 탑 플레이트(8) 및 사이드 스커트(9)는 카본계 세라믹스인 그라파이트(graphite)로 형성되고, 보텀 플레이트(10)는 석영으로 형성된다. 또한, 보텀 플레이트(10)의 표면에는, 예를 들면 석영 등으로 형성된 원판 모양의 단열재(11)가 제공된다.The top plate 8, the side skirt 9 and the bottom plate 10 may be formed of an insulating member having excellent heat resistance and corrosion resistance, such as alumina ceramics, aluminum nitride ceramics, carbon-based ceramics, and quartz . Specifically, in the present embodiment, the integrally formed top plate 8 and the side skirt 9 are formed of graphite, which is carbon-based ceramics, and the bottom plate 10 is formed of quartz. On the surface of the bottom plate 10, there is provided a heat insulator 11 in the form of a disk formed of, for example, quartz.

덧붙여, 사이드 스커트(9) 및 보텀 플레이트(10)는 일체로 형성된 것에 한정하지 않고, 별도로 형성될 수도 있다. 또한, 사이드 스커트(9)의 형상은 상술한 원통 모양에 한정하지 않고, 하부로 향해 점차 확대되는 직경을 갖는 테이퍼 형상을 가질 수 있다.Incidentally, the side skirt 9 and the bottom plate 10 are not limited to those formed integrally, but may be formed separately. The shape of the side skirt 9 is not limited to the above-mentioned cylindrical shape, but may have a tapered shape having a diameter gradually increasing toward the bottom.

회전 스테이지(2)는 축선 방향으로 관통하는 복수의 관통공들(12a, 12b, 12c)이 형성된 중공의 원통 모양의 회전 샤프트(12)를 가진다. 회전 샤프트(12)는 보텀 플레이트(10)의 아래쪽 면 중앙에서 하부로 돌출되고, 챔버(101)을 관통한 상태로 챔버(101)의 아래쪽 면에 배치된 회전 진공 씰(rotary vacuum seal)(13)을 개재하여 회전 가능하도록 지지된다. 회전 진공 씰 13에는 자성 유체 씰(magnetic fluid seal)이 이용된다. 또한, 회전 샤프트(12)는 그 하단부에 장착된 진공 플랜지(14)를 개재하여 구동 모터(15)에 접속된다. 진공 플랜지(14)는 세라믹스 등의 절연재로 형성된다. 이것에 의하여, 회전 스테이지(2)는 막 형성 시에 구동 모터(15)가 회전 샤프트(12)를 회전 구동하는 것에 의해 원주방향으로 회전 가능하다.The rotary stage 2 has a hollow cylindrical rotary shaft 12 formed with a plurality of through holes 12a, 12b and 12c penetrating in the axial direction. The rotary shaft 12 is provided with a rotary vacuum seal 13 which protrudes downward from the center of the lower surface of the bottom plate 10 and is disposed on the lower surface of the chamber 101 through the chamber 101 To be rotatable. A magnetic fluid seal is used for the rotary vacuum seal 13. The rotary shaft 12 is connected to the drive motor 15 via a vacuum flange 14 mounted at its lower end. The vacuum flange 14 is formed of an insulating material such as ceramics. Thus, the rotary stage 2 is rotatable in the circumferential direction by the drive motor 15 rotatingly driving the rotary shaft 12 at the time of film formation.

회전 스테이지(2)의 로딩 면(2a) 상에 로딩된 웨이퍼(W)는 막 형성 시에 히터(3)에 의해 600℃ 내지 2000℃의 온도로 가열된다. 회전 샤프트(12)는 이러한 고온에 견딜 수 있도록, 그리고 H2, HCl, Cl2 등의 반응성 가스에 부식 되지 않도록, 예를 들면 세라믹스 또는 유리 등의 내열성 및 내부식성이 뛰어난 절연부재로 형성된다. 　구체적으로, 유리는, 예를 들면, 석영(SiO2) 유리 또는 사파이어(Al2O3) 유리 등으로 형성될 수 있다. 한편, 세라믹스는, 예를 들면, 알루미나(Al2O3), 산화 지르코늄(ZrO2) 등의 산화물계 세라믹스, 및 질화 알루미늄(AlN), 질화 규소(Si3N4), 탄화 규소(SiC), 질화 붕소(BN), 카본 세라믹스 등의 비산화물계 세라믹스 등으로 형성될 수 있다.The wafer W loaded on the loading surface 2a of the rotary stage 2 is heated by the heater 3 to a temperature of 600 to 2000 占 폚 at the time of film formation. The rotating shaft 12 is formed of an insulating member excellent in heat resistance and corrosion resistance such as ceramics or glass so as to withstand such a high temperature and not to corrode with a reactive gas such as H2, HCl, Cl2 or the like. Specifically, the glass may be formed of, for example, quartz (SiO2) glass or sapphire (Al2O3) glass or the like. On the other hand, the ceramics can be obtained by using, for example, oxide ceramics such as alumina (Al2O3), zirconium oxide (ZrO2), and ceramics such as aluminum nitride (AlN), silicon nitride (Si3N4), silicon carbide (SiC), boron nitride And non-oxide ceramics such as carbon ceramics.

회전 샤프트(12)는 석영 또는 질화 규소로 주로 형성되는 것이 바람직하다. 덧붙여, 본 실시 형태에서, 회전 샤프트(12)에 질화 규소가 이용된다.The rotating shaft 12 is preferably formed mainly of quartz or silicon nitride. Incidentally, in the present embodiment, silicon nitride is used for the rotating shaft 12.

게다가, 챔버(101)의 외측에 회전 샤프트(12)를 냉각하는 냉각 기구(16)가 설치된다. 냉각 기구(16)는 챔버(101)의 하부에 배치되어, 막 형성 시에 회전 샤프트(12)를 향해 송풍하는 냉각 팬일 수 있다. 덧붙여, 냉각 기구(16)는 상술한 냉각 팬과 같은 공랭식의 냉각 기구에 한정하지 않고, 수냉식의 냉각 기구일 수 있다. 또한, 압전소자 또는 펠티어 소자 등의 냉각 기구일 수도 있다.In addition, a cooling mechanism 16 for cooling the rotating shaft 12 is provided outside the chamber 101. The cooling mechanism 16 may be a cooling fan arranged at a lower portion of the chamber 101 and blowing toward the rotating shaft 12 at the time of forming the film. In addition, the cooling mechanism 16 is not limited to the air-cooling type cooling mechanism such as the above-described cooling fan, but may be a water-cooling type cooling mechanism. It may also be a cooling mechanism such as a piezoelectric element or a Peltier element.

히터(3)는 탑 플레이트(8)의 아래쪽 면(내면)에 배치된 복수의 히터 코일들(17), 사이드 스커트(9)의 내주면을 따라 나란히 배치된 복수의 전극부들(19)을 포함할 수 있다.The heater 3 includes a plurality of heater coils 17 arranged on the lower surface (inner surface) of the top plate 8 and a plurality of electrode portions 19 arranged side by side along the inner circumferential surface of the side skirt 9 .

복수의 히터 코일들(17)은 동심원 모양 또는 나선 모양의 발열 저항체이며, 탑 플레이트(8)의 지름 방향으로 소정의 간격으로 나란히 배치된다. 히터 코일들(17)을 형성하는 발열 저항체는 탄소재료(C)(예를 들면, CVD법에 의해 형성된 질화 붕소(PBN) 또는 열분해 graphite(PG)의 박막)의 내열성이 뛰어난 도전 부재일 수 있다. 또한, 발열 저항체는 체적 저항율이 4.8μΩm 내지 11μΩm인 저저항율의 탄소재료(C)로 형성될 수 있다.The plurality of heater coils 17 are concentric or spiral heating resistors arranged side by side at predetermined intervals in the radial direction of the top plate 8. The heat generating resistor forming the heater coils 17 may be a conductive material having excellent heat resistance of the carbon material C (for example, boron nitride (PBN) formed by CVD or pyrolytic graphite (PG) thin film) . Further, the heat generating resistor may be formed of a low resistivity carbon material (C) having a volume resistivity of 4.8 Ω m to 11 Ω m.

복수의 전극부들(19)은 복수의 히터 코일들(17)에 전기적으로 접속된 상태로, 사이드 스커트(9)의 원주방향으로 소정의 간격으로 나란히 배치된다. 또한, 각 전극부(19)는 회전 샤프트(12) 측으로 연장된다.The plurality of electrode portions 19 are arranged side by side at predetermined intervals in the circumferential direction of the side skirt 9 while being electrically connected to the plurality of heater coils 17. [ Each of the electrode portions 19 extends toward the rotating shaft 12 side.

막 형성시, 복수의 전극부들(19)을 개재하여 복수의 히터 코일들(17)에 전력이 공급된다. 이것에 의해, 이러한 히터 코일들(17, 18)을 발열시켜, 로딩 면(2a) 상에 로딩된 웨이퍼(W)를 가열한다.Electric power is supplied to the plurality of heater coils 17 via the plurality of electrode portions 19 when the film is formed. Thus, the heater coils 17 and 18 are heated to heat the loaded wafer W on the loading surface 2a.

정전척(4)은 탑 플레이트(8)의 표면(로딩 면(2a))에 있는 유전체층에 매설된 한 쌍의 내부 전극들(20a, 20b), 및 한 쌍의 내부 전극들(20a, 20b)과 전기적으로 접속된 상태로 회전 샤프트(12) 측으로 연장된 한 쌍의 전극부들(21a, 21b)을 포함한다.The electrostatic chuck 4 includes a pair of internal electrodes 20a and 20b buried in a dielectric layer on the surface of the top plate 8 (loading surface 2a), and a pair of internal electrodes 20a and 20b. And a pair of electrode portions 21a and 21b extending toward the rotating shaft 12 in an electrically connected state.

막 형성 시, 한 쌍의 전극부들(21a, 21b)를 개재하여 한 쌍의 내부 전극들(20a, 20b)의 사이에 전압이 인가된다. 이것에 의해, 웨이퍼(W)의 표면에 역전압을 유도하여, 양자간에 작용하는 쿨롱력(Coulomb force), 죤슨·라벡크력(Johnsen－Rahbek force), 경사력(gradient force) 등에 의해 웨이퍼(W)를 흡착한다.During film formation, a voltage is applied between the pair of internal electrodes 20a and 20b via the pair of electrode portions 21a and 21b. Thereby, a reverse voltage is induced on the surface of the wafer W, and a wafer W (e.g., a wafer W) is generated by a Coulomb force, a Johnsen-Rahbek force, a gradient force, .

전력 공급부(5)는 히터(3)에 전력을 공급하는 히터용 전원(22), 정전척(4)에 전력을 공급하는 정전척용 전원(23)을 포함한다. 히터용 전원(22)은 회전 샤프트(12)의 관통공(12a)을 통해 챔버(101)의 외측으로 연장된 복수의 제1 배선들(24a)을 개재하여 히터(3)(구체적으로, 복수의 전극부들(19))에 전기적으로 접속된다. 정전척용 전원(23)은 회전 샤프트(12)의 관통공(12b)을 통해 챔버(101)의 외측으로 연장된 한 쌍의 제2 배선들(24b)을 개재하여 정전척(4)(구체적으로, 한 쌍의 전극부들(21a, 21b))에 전기적으로 접속된다.The power supply unit 5 includes a heater power supply 22 for supplying electric power to the heater 3 and a power supply 23 for an electrostatic chuck for supplying electric power to the electrostatic chuck 4. [ The heater power source 22 is connected to the heater 3 via a plurality of first wiring lines 24a extended to the outside of the chamber 101 through the through hole 12a of the rotary shaft 12 The electrode portions 19 of the first electrode layer 20). The electrostatic chuck power supply 23 is connected to the electrostatic chuck 4 through a pair of second wires 24b extending outwardly of the chamber 101 through the through hole 12b of the rotary shaft 12 And a pair of electrode portions 21a and 21b).

온도 측정부(6)는 회전 샤프트(12)의 관통공(12c)을 통해 챔버(101)의 외측으로 연장된 한 쌍의 제3 배선들(24c)과 전기적으로 접속된 열전대(25)를 포함한다. 열전대(25)는 회전 샤프트(12)의 관통공(12c)을 통해 탑 플레이트(8)에 접하는 위치까지 연장하여 설치된다. 온도 측정부(6)는 열전대(25)에 의해 로딩 면(2a) 상에 로딩된 웨이퍼(W)의 온도(미소 신호)를 측정하여, 그 측정 결과를 전력 제어부(7)로 제공한다.The temperature measuring unit 6 includes a thermocouple 25 electrically connected to a pair of third wires 24c extended to the outside of the chamber 101 through the through hole 12c of the rotating shaft 12 do. The thermocouple 25 extends through the through-hole 12c of the rotating shaft 12 to a position in contact with the top plate 8. The temperature measuring unit 6 measures the temperature (minute signal) of the wafer W loaded on the loading surface 2a by the thermocouple 25 and provides the measurement result to the power control unit 7. [

전력 제어부(7)는 온도 측정부(6)가 측정한 온도에 근거하여 웨이퍼(W)가 소망한 온도가 되도록, 히터용 전원(22)으로부터 히터(3)에 공급되는 전력을 제어한다.The power control unit 7 controls the power supplied from the heater power supply 22 to the heater 3 so that the wafer W reaches a desired temperature based on the temperature measured by the temperature measurement unit 6. [

이상과 같이, 본 실시 형태의 막 형성 장치(100)에서의 회전 샤프트(12)에 내열성 및 내부식성이 뛰어난 절연부재를 이용함으로써, 막 형성 시에 히터(3)에 의해 600℃ 내지 2000℃의 고온으로 가열되더라도 회전 샤프트(12)의 각 관통공(12a, 12b, 12c)을 통해 배치되는 각 배선(24a, 24b, 24c)을 열적으로 보호하는 것이 가능하다. 또한, 각 배선(24a, 24b, 24c)과 회전 샤프트(12)의 전기적인 절연도 가능하다. 게다가, 막 형성 시 사용되는 가스에 의한 각 배선(24a, 24b, 24c)의 부식을 방지하는 것이 가능하다.As described above, by using the insulating member having excellent heat resistance and corrosion resistance in the rotary shaft 12 in the film forming apparatus 100 of the present embodiment, It is possible to thermally protect the wirings 24a, 24b and 24c disposed through the through holes 12a, 12b and 12c of the rotary shaft 12 even when heated to a high temperature. It is also possible to electrically insulate the wirings 24a, 24b, 24c from the rotary shaft 12. In addition, it is possible to prevent corrosion of each of the wirings 24a, 24b, and 24c due to the gas used in film formation.

따라서, 본 실시 형태의 막 형성 장치(100)에서, 히터(3), 정전척(4) 및 열전대(25)에 전기적으로 접속되는 각 배선(24a, 24b, 24c)이 고온에 노출되는 일 없이, 히터(3), 정전척(4) 및 열전대(25)를 정상적으로 동작시키는 것이 가능하므로, 초고온의 막 형성 프로세스가 가능하다.Therefore, in the film forming apparatus 100 of the present embodiment, the wirings 24a, 24b, and 24c electrically connected to the heater 3, the electrostatic chuck 4, and the thermocouple 25 are not exposed to high temperatures The heater 3, the electrostatic chuck 4 and the thermocouple 25 can be normally operated, so that an ultra-high temperature film forming process is possible.

1: 서스셉터(웨이퍼 로딩 기구) 2: 스테이지
2a: 로딩면 3: 히터
4: 전 지퍼 5: 전력 공급부
6: 온도 측정부 7: 전력 제어부
8: 탑 플레이트 9: 사이드 플레이트
10: 보텀 플레이트 11: 단열재
12: 회전 샤프트 12a-12c: 관통공
13: 회전 진공 씰 14: 진공 플랜지
15: 구동 모터 16: 냉각 팬
17: 히터 코일 19: 전극부
20a, 20b: 내부 전극 21a, 21b: 전극부
22: 히터용 전원 23: 정전척용 전원
24a: 제1 배선 24b: 제2 배선
24c: 제3 배선 25: 열전대
26: 개구부 100: 막 형성 장치
101: 챔버 W: 웨이퍼1: susceptor (wafer loading mechanism) 2: stage
2a: loading surface 3: heater
4: front zipper 5: power supply
6: Temperature measurement unit 7: Power control unit
8: Top plate 9: Side plate
10: bottom plate 11: insulation
12: rotating shaft 12a-12c: through hole
13: rotary vacuum seal 14: vacuum flange
15: drive motor 16: cooling fan
17: heater coil 19: electrode part
20a, 20b: internal electrodes 21a, 21b: electrode portions
22: heater power supply 23: electrostatic chuck power supply
24a: first wiring 24b: second wiring
24c: third wiring 25: thermocouple
26: opening part 100: film forming device
101: chamber W: wafer

Claims (6)

챔버 내의 웨이퍼에 막을 형성하는 막 형성 장치에 있어서,
상기 웨이퍼가 로딩되는 로딩 면을 갖고, 원주방향으로 회전 구동되는 회전 스테이지;
상기 회전 스테이지에 설치되어, 상기 로딩 면에 로딩된 웨이퍼를 가열하는 히터; 및
상기 히터에 전력을 공급하는 전력 공급부를 포함하고,
상기 회전 스테이지는 상기 챔버를 관통한 상태로 회전 가능하도록 지지되는 회전 샤프트를 포함하고,
상기 전력 공급부는 상기 히터와 전기적으로 접속되고, 상기 회전 샤프트를 축선 방향으로 관통하는 관통공을 통해 상기 챔버의 외측으로 연장된 배선을 갖고,
상기 히터는 상기 회전 스테이지의 로딩 면에 로딩된 웨이퍼를 600℃ 내지 2000℃의 온도로 가열하고,
상기 회전 샤프트는 상기 온도에 대해서 내열성 및 내부식성을 가지는 세라믹스 또는 유리로 형성되는 막 형성 장치.A film forming apparatus for forming a film on a wafer in a chamber,
A rotary stage having a loading surface on which the wafer is loaded, the rotary stage being rotationally driven in a circumferential direction;
A heater installed on the rotating stage for heating a wafer loaded on the loading surface; And
And a power supply unit for supplying power to the heater,
Wherein the rotating stage includes a rotating shaft rotatably supported through the chamber,
Wherein the power supply unit has a wiring which is electrically connected to the heater and extends to the outside of the chamber through a through hole penetrating the rotating shaft in an axial direction,
The heater heats the wafer loaded on the loading surface of the rotating stage to a temperature of 600 ° C to 2000 ° C,
Wherein the rotating shaft is formed of ceramics or glass having heat resistance and corrosion resistance against the temperature. 제 1 항에 있어서,
상기 세라믹스는 질화 규소를 포함하는 막 형성 장치.The method according to claim 1,
Wherein the ceramics comprises silicon nitride. 제 1 항에 있어서,
상기 유리는 석영 유리를 포함하는 막 형성 장치.The method according to claim 1,
Wherein the glass comprises quartz glass. 제 1 항에 있어서,
상기 챔버의 외측에 설치되어, 상기 회전 샤프트를 냉각하는 냉각 기구를 갖는 막 형성 장치.The method according to claim 1,
And a cooling mechanism installed outside the chamber for cooling the rotating shaft. 제 1 항에 있어서,
상기 회전 스테이지에 설치되어, 상기 로딩 면에 로딩된 웨이퍼를 흡착하는 정전척을 더 포함하고,
상기 전력 공급부는 상기 정전척과 전기적으로 접속된 배선을 가지고, 상기 회전 샤프트를 축선 방향으로 관통하는 관통공을 통해 상기 챔버의 외측으로 연장되는 상기 배선을 개재하여 상기 정전척 전력을 공급하는 막 형성 장치.The method according to claim 1,
Further comprising an electrostatic chuck provided on the rotating stage and adapted to attract a wafer loaded on the loading surface,
Wherein the electric power supply unit has a wiring electrically connected to the electrostatic chuck and includes a film forming device for supplying the electrostatic chuck power through the wiring extending to the outside of the chamber through a through hole penetrating the rotating shaft in an axial direction, . 제 1 항에 있어서,
상기 회전 스테이지에 설치되어, 상기 회전 스테이지의 로딩 면에 로딩된 웨이퍼의 온도를 측정하는 온도 측정부를 더 포함하고,
상기 온도 측정부는 상기 회전 샤프트를 축선 방향으로 관통하는 관통공을 통해 상기 챔버의 외측으로 연장되는 배선과 전기적으로 접속된 열전대를 가지는 막 형성 장치.The method according to claim 1,
Further comprising a temperature measuring unit installed on the rotating stage for measuring a temperature of the wafer loaded on the loading surface of the rotating stage,
Wherein the temperature measuring unit has a thermocouple electrically connected to a wiring extending to the outside of the chamber through a through hole penetrating the rotating shaft axially.
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