JP6789354B1 - Surface treatment method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surface treatment method capable of suppressing desorption of a film deposited on a member surface from the member. SOLUTION: The surface 10F is roughened by blasting a member 10 having a metal surface 10F, and a porous oxide film is formed on the roughened surface 10F by anodizing, at least. Includes etching the oxide film with an etching solution. [Selection diagram] Fig. 1

Description

The present invention relates to a surface treatment method.

Various vacuum processing devices such as a sputtering device, an etching device, and an ashing device are composed of a large number of members having a metal surface. The members constituting the vacuum processing apparatus include a member for partitioning a processing space in which processing is performed on an object in the vacuum processing apparatus, and a member arranged in the processing space. Film formations are deposited on these members due to the adhesion of film formation species generated by the treatment in the treatment space. The film formed separated from the member becomes particles, which may contaminate the target by adhering to the target or the member. Therefore, for example, the surface of the adhesive plate provided in the sputtering apparatus is subjected to blasting and thermal spraying (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2012-224921

By the way, there is still room for study in the treatment of the surface of the member applied to the vacuum processing apparatus from the viewpoint of suppressing the detachment of the film formed on the surface.
An object of the present invention is to provide a surface treatment method capable of suppressing desorption of a film deposited on the surface of a member from the member.

The surface treatment method for solving the above problems is to roughen the surface by blasting a member having a metal surface and to form a porous oxide film on the roughened surface by etching. It includes forming and at least etching the oxide film with an etching solution.

According to the above configuration, the surface is roughened by the blasting treatment, and the oxide film formed on the roughened surface is etched to increase the surface roughness on the surface and clean the surface. It is possible. As a result, the film deposited on the surface is less likely to be separated from the surface.

In the above surface treatment method, forming the oxide film may include forming the oxide film having a thickness of 1 μm or more and 20 μm or less. According to this configuration, the media that has been blasted onto the surface and the stains caused by the media are more likely to be contained in the oxide film. This increases the certainty that both media and dirt will be removed from the surface by etching the oxide film.

In the above surface treatment method, at least etching the oxide film may include etching so that the etching amount is thicker than the thickness of the oxide film in the thickness direction of the oxide film.

According to the above configuration, since the oxide film formed on the surface is surely removed, the media incorporated in the oxide film and the stains caused by the media are surely removed from the surface as the oxide film grows. Is done. As a result, the surface is cleaned, and as a result, the detachment of the film formed on the surface is further suppressed.

In the above surface treatment method, the arithmetic mean roughness specified in JIS B 0601: 2013 on the surface roughened by the blast treatment by forming the oxide film and at least etching the oxide film. The surface may be formed with an arithmetic mean roughness Ra higher than Ra.

According to the above configuration, a surface having an arithmetic mean roughness Ra higher than that after the blast treatment is obtained, whereby the stress in the film formed on the surface is further relaxed. As a result, the film deposited on the surface is more prevented from being detached from the surface.

In the above surface treatment method, the surface may be formed of either aluminum or an aluminum alloy. According to this configuration, since the surface contains aluminum, the oxide film formed on the surface is an oxide of aluminum. Since the aluminum oxide has a pilling bedworth ratio of 1 or more and 2 or less, a denser film is formed on the surface as compared with an oxide having a pilling bedworth ratio smaller than 1 or larger than 2. It is formed. As a result, an oxide film having a shape that follows the shape of the surface is likely to be formed. Therefore, since the oxide film has a shape that resembles the uneven shape of the surface, even if the oxide film is etched, the surface roughness on the surface is smaller than the surface roughness after being roughened by the blast treatment. It is hard to become. As a result, a surface having a high surface roughness due to the blasting treatment can be obtained. As a result, the film deposited on the surface is more suppressed from being detached.

The process drawing for demonstrating the process of performing a blast treatment on the surface of a member in one Embodiment of a surface treatment method. The process drawing for demonstrating the process of forming an oxide film on the surface of a member in the same embodiment. The process drawing for demonstrating the process of etching the surface of a member in the same embodiment. The process drawing for demonstrating the process of cleaning the surface of a member in the same embodiment.

An embodiment of the surface treatment method will be described with reference to FIGS. 1 to 4. Hereinafter, the surface treatment method and examples will be described in order.

[Surface treatment method]
The surface treatment method will be described with reference to FIGS. 1 to 4.
The surface treatment method includes roughening the surface of the member, forming a porous oxide film, and etching the oxide film. In roughening the surface of a member, the surface is roughened by a blast treatment on a member having a metal surface. By forming a porous oxide film, a porous oxide film is formed on the roughened surface by anodizing. By etching the oxide film, at least the oxide film is etched with an etching solution.

According to such a surface treatment method, the surface is roughened by the blast treatment, and the oxide film formed on the roughened surface is etched to increase the surface roughness on the surface and clean the surface. It is possible to etch. As a result, the film deposited on the surface is less likely to be separated from the surface. As a result, particles are less likely to be generated in the vacuum processing apparatus to which the member is applied. Hereinafter, the surface treatment method will be described in more detail with reference to the drawings.

As shown in FIG. 1, in the surface treatment method, first, a member 10 having a metal surface 10F is prepared. In the member 10, at least the surface 10F may be made of metal, but the entire member 10 may be made of metal. The surface 10F may be formed from either aluminum or an aluminum alloy.

Since the surface 10F contains aluminum, the oxide film formed on the surface 10F is an oxide of aluminum. Since the aluminum oxide has a pilling bedworth ratio of 1 or more and 2 or less, a denser film is formed on the surface as compared with an oxide having a pilling bedworth ratio smaller than 1 or larger than 2. It is formed. As a result, an oxide film having a shape that follows the shape of the surface 10F is likely to be formed. Therefore, since the oxide film has a shape that follows the uneven shape of the surface 10F, even if the oxide film is etched, the surface roughness on the surface 10F is roughened by the blast treatment, and then the surface roughness on the surface 10F is roughened. It is harder to get smaller than that. As a result, a surface 10F having a high surface roughness due to the blast treatment can be obtained. As a result, the film deposited on the surface 10F is more suppressed from being detached. The pilling bedworth ratio of aluminum to aluminum oxide is 1.28.

The vacuum processing device to which the member 10 is applied is a device capable of depositing a film on the surface 10F of the member 10. The vacuum processing apparatus may be, for example, various film forming apparatus, etching apparatus, ashing apparatus and the like. The film forming apparatus may be, for example, a sputtering apparatus, a CVD apparatus, a vapor deposition apparatus, or the like.

The member 10 is used in the various vacuum processing devices described above. The member 10 may be a member arranged in the processing space partitioned by the vacuum processing apparatus, or may be a member for partitioning the processing space. The member arranged in the processing space may be, for example, a protective plate that prevents the film-forming species from scattering in the processing space, a tray that supports the processing target of the vacuum processing apparatus, or the like. The member that partitions the processing space may be, for example, a member that forms the inner wall of the vacuum chamber that partitions the processing space. That is, the member 10 may have a flat plate shape or a shape along a predetermined curved surface. Further, the member 10 may be formed from one plate member, or may be a combination of a plurality of plate members.

Next, the surface 10F is roughened by performing a blast treatment on the surface 10F. By the blasting treatment, the surface roughness on the surface 10F after roughening is made higher than the surface roughness on the surface 10F before roughening. The surface roughness of the member 10 on the surface 10F can be evaluated by the arithmetic mean roughness Ra defined in JIS B 0601: 2013.

In the blasting process, the media M ejected from the nozzle N of the blasting device is struck on the surface 10F of the member 10. As a result, the surface 10F after the blast treatment is roughened as compared with the surface 10F before the blast treatment. The material forming the media M may be, for example, a metal, a metal oxide, a metal carbide, a silicon oxide, a silicon carbide, or the like. The material forming the media M may be, for example, iron, alumina, zirconia, silicon oxide, silicon carbide, silica sand, or the like. The media M is a fine particle formed by each material. The media M may contain two or more types of fine particles formed of different materials.

The particle size of the media M can be 50 or more and 300 or less. The particle size of the media M is specified in JIS Z 0311: 2004. In the media M, the vapor pressure at 330 ° C. may be 1.33 × 10 ^-4 Pa or less. The vapor pressure curve of the media M is preferably lower than the vapor pressure curve of zinc. In the media M, the Vickers hardness defined in JIS Z 2244: 2009 may be 400 or more. This increases the certainty of obtaining the surface 10F having the desired arithmetic mean roughness Ra.

The media M used for the blast processing is often used repeatedly for the purpose of improving the utilization efficiency of the media M. That is, the blasting device used for the blasting process is often a circulation type blasting device that circulates the media M in the blasting device. Further, oily stains are often attached to the metal surface 10F to be blasted for the following reasons. That is, in order to suppress deterioration of the surface 10F, for example, rust, oil and fat are often applied to the surface 10F after the member 10 is formed. Alternatively, in order to facilitate the processing of the metal for forming the member 10, oil is often applied to the portion of the base material of the member 10 corresponding to the surface 10F.

Therefore, the oil and fat applied to the surface 10F adheres to the media M struck on the surface 10F, whereby the media M is contaminated with the oil and fat. Then, as the number of times the media M is struck on the member 10 increases, the amount of oil and fat adhering to the media M also increases.

If the fats and oils are applied to the surface 10F before roughening, the fats and oils adhering to the surface 10F can be removed by wiping off the fats and oils or washing the surface 10F with water or the like. However, unlike the fats and oils applied to the surface 10F before roughening, the fats and oils that are driven into the surface 10F together with the media M by the blasting treatment are difficult to remove from the surface 10F of the member 10 by wiping or cleaning.

As shown in FIG. 2, an oxide film 10OF is formed on the roughened surface 10F by anodizing. In anodizing, the cathode CD and the anode AD are immersed in the electrolytic solution EL filled in the first treatment tank T1, and the power supply P is connected to the cathode CD and the anode AD. In the present embodiment, by supporting the member 10 by the jig ADa included in the anode AD, a current is supplied to the member 10 in the electrolytic solution EL via the anode AD. In the anodization, it is not necessary to use an anode AD other than the member 10. In this case, the member 10 may be connected to the power supply P as an anode.

When the member 10 is made of aluminum or an aluminum alloy, for example, the oxide film 10OF is formed on the surface of the member 10 by immersing the member 10 in sulfuric acid of 10% by mass or more and 20% by mass or less. Is possible.

When the member 10 is made of titanium and, for example, an oxide film having a thickness of several hundred nm is formed on the member 10, the electrolytic solution EL listed below can be used. That is, the electrolytic solution EL is a solution in which at least one of borax, ammonium borate, ammonium phosphate, and ammonium succinate is dissolved in a mixed solution of methanol, ethylene glycol, glycerin, and propionic acid. You can. The electrolytic solution EL may be phosphoric acid of 10% by mass or more and 20% by mass or less. The electrolytic solution EL may be phosphoric acid to which dextrin is added. The electrolytic solution EL may be a mixed solution of sodium carbonate, boric acid, borax, and tartaric acid. Alternatively, the member 10 may be anodized using the first electrolytic solution and then anodized using the second electrolytic solution. In this case, the first electrolytic solution is a mixed solution of 15% by mass sulfuric acid, 10% by mass phosphoric acid, and 20% by mass acetic acid. The second electrolytic solution is a 10% by mass phosphoric acid solution using glacial acetic acid.

Further, when the member 10 is made of titanium and an oxide film having a thickness of several μm is formed on the member 10, the electrolytic solution EL may be a mixed solution of phosphoric acid and sulfuric acid. ..

When forming the oxide film 10OF, it is possible to form the oxide film 10OF having a thickness of 1 μm or more and 20 μm or less. As a result, the certainty that the media M driven into the surface 10F by the blast treatment and the stains caused by the media M are contained in the oxide film 10OF is increased. That is, the media M and dirt are more likely to be located closer to the surface of the oxide film 10OF than the boundary between the oxide film 10OF and the portion inside the oxide film 10OF. This increases the certainty that both the media M and the dirt are removed from the surface 10F by etching the oxide film 10OF.

When the oxide film 10OF is formed by anodizing, the oxide film 10OF grown on both the inside and the outside of the surface 10F of the member 10 before the anodization is formed. Therefore, for example, the media M driven into the surface 10F by the blast treatment is likely to be located in the oxide film 10OF or on the surface of the oxide film 10OF. Further, for example, the media M driven inward from the surface 10F by the blast treatment is also highly likely to be contained in the oxide film 10OF. Therefore, if the oxide film 10OF formed by anodization is removed from the member 10, it is possible to obtain the member 10 having the media M and the surface 10F from which the stains caused by the media M have been removed.

Further, as the oxide film 10OF grows on the surface 10F due to anodization, a force in the direction of separating the media M from the surface 10F acts on the media M driven into the surface 10F. That is, as the oxide film 10OF grows near the interface between the media M and the surface 10F, the media M pierced into the surface 10F grows along with the growth of the oxide film 10OF, and the oxide film 10OF and the base material of the member 10, that is, the main body portion. It is extruded from the interface of the media M, thereby eliminating the state in which the media M is stuck in the member.

As described above, as long as the oxide film 10OF is formed between the media M and the surface 10F, the media M is extruded, and the growth of the oxide film 10OF at the portion where the media M is extruded further progresses. Such an effect can be sufficiently obtained even if the thickness of the oxide film 10OF is several hundred nm.

Further, as described above, when the member 10 is made of aluminum or an aluminum alloy, the pilling bedworth ratio between aluminum and aluminum oxide is 1.28. Therefore, as a result of the formation of the dense oxide film 10OF, the oxide film 10OF grown in a direction substantially perpendicular to the surface 10F of the member 10 is likely to be formed. As a result, the shape of the surface of the oxide film 10OF follows the shape of the surface 10F after roughening.

As shown in FIG. 3, the etching solution ET is used to etch the surface 10F on which the oxide film 10OF is formed. In the present embodiment, the surface 10F of the member 10 is etched by the etching solution ET by immersing the member 10 in the etching solution ET filled in the second treatment tank T2.

At least when etching the oxide film 10OF, the etching amount may be thicker than the thickness of the oxide film 10OF in the thickness direction of the oxide film 10OF. As a result, the oxide film 10OF formed on the surface 10F is surely removed. Therefore, as the oxide film 10OF grows, the media M incorporated into the oxide film 10OF and the stains caused by the media M also appear on the surface 10F. Is surely removed from. As a result, the surface 10F is cleaned, and as a result, the detachment of the film film deposited on the surface 10F is further suppressed.

As described above, the fats and oils that have been driven into the surface 10F together with the media M by the blasting treatment can be removed from the surface 10F of the member 10 by wiping or cleaning, unlike the fats and oils that are applied to the surface 10F before roughening. difficult. In this respect, according to the etching of the surface 10F using the etching solution ET, the oxide film 10OF formed on the surface 10F of the member 10 is etched, so that the media M and the media M driven into the member 10 are together. The oil and fat driven into the member 10 is also removed.

The etching solution ET includes, for example, sodium hydroxide aqueous solution (NaOH), potassium hydroxide aqueous solution (KOH), sulfuric acid (H ₂ SO ₄ ), hydrochloric acid (HCl), hydrofluoric acid (HF), nitric acid (HNO ₃ ), and It may be metaphosphate (HPO ₃ ) or the like. The etching solution ET may contain only one of these solutions, or may contain two or more of these solutions.

When the member 10 is formed of an aluminum alloy, the solutions listed below can be used as the etching solution ET. The etching solution ET may be a sodium hydroxide aqueous solution, a potassium hydroxide aqueous solution, and sulfuric acid, or may be a mixed solution containing at least two of these. Further, the etching solution ET may be a sodium hydroxide potassium ferricyanide aqueous solution or a solution obtained by mixing zinc chloride with the sodium hydroxide aqueous solution. When the surface 10F of the member 10 is etched by electrolytic etching, a solution obtained by mixing sulfuric acid and phosphoric acid can be used as the etching solution ET.

When the member 10 is made of titanium, the solutions listed below can be used as the etching solution ET. The etching solution ET is a mixed solution of potassium hydroxide aqueous solution and hydrogen peroxide, a solution of ethanol mixed with ammonium hydrogen difluoride, hydrofluoric acid, a mixed solution of hydrofluoric acid and iron (III) nitrate aqueous solution, and It may be hydrochloric acid. When the surface 10F of the member 10 is etched by electrolytic etching, a mixed solution of ethylene glycol and an aqueous sodium chloride solution can be used as the etching solution ET.

Among these etching solutions ET, it is preferable to use a solution other than the solution containing hydrofluoric acid and the solution containing zinc. As a result, hydrofluoric acid is released into the vacuum processing apparatus to which the member 10 is applied, or zinc is released into the vacuum processing apparatus when the temperature in the vacuum processing apparatus reaches about 100 ° C. Can be suppressed.

Arithmetic average roughness higher than the arithmetic average roughness Ra specified in JIS B 0601: 2013 on the surface 10F roughened by blasting by forming the oxide film 10OF and at least etching the oxide film 10OF. A surface 10F having a surface Ra may be formed. According to the above configuration, the surface 10F having an arithmetic mean roughness Ra higher than that after the blast treatment is obtained, whereby the stress in the film formed on the surface 10F is further relaxed. As a result, the film deposited on the surface 10F is more suppressed from being separated from the surface 10F.

As shown in FIG. 4, the member 10 after etching is cleaned with the cleaning liquid C. In the present embodiment, the surface 10F of the member 10 is cleaned by the cleaning liquid C by immersing the member 10 in the cleaning liquid C filled in the third treatment tank T3. The cleaning liquid C may be, for example, pure water or ultrapure water. The temperature of the cleaning liquid C may be, for example, 10 ° C. or higher, and the cleaning liquid C may be boiling. By using pure water or ultrapure water as the cleaning liquid C, when the member 10 is applied to the vacuum processing apparatus, substances that may be released into the vacuum processing apparatus remain on the surface 10F of the member 10. Is suppressed.

[Example]
Examples will be described with reference to Table 1.
[Comparative Example 1]
A disk made of A5052, which has a diameter of 45 mm and a thickness of 3 mm and is an aluminum alloy specified in JIS H 4000: 2014, was prepared. The 100th glass beads specified in JIS Z 0311: 2004 were prepared as media, and the surface of the disk was roughened by a dry blasting treatment. Next, the disk was immersed in ethanol filled in a beaker, and ultrasonic cleaning was performed for 5 minutes. The disc was washed with ethanol five times while exchanging ethanol each time such ultrasonic cleaning was performed. As a result, the disk of Comparative Example 1 was obtained.

[Comparative Example 2]
A disk made of A5052, which has a diameter of 45 mm and a thickness of 3 mm and is an aluminum alloy specified in IJSH 4000: 2014, was prepared. The 100th glass beads specified in JIS Z 0311: 2004 were prepared as media, and the surface of the disk was roughened by a dry blasting treatment. Next, the member was immersed in a 10% by mass sodium hydroxide aqueous solution at 25 ° C. for 2 minutes to etch the surface of the disk. In the thickness direction of the disc, the etching amount of the disc was about 1 μm. Then, after washing the surface of the disk with water, the disk was immersed in pure water. Finally, the surface of the disk was washed away with pure water to obtain the disk of Comparative Example 2.

[Comparative Example 3]
In Comparative Example 2, the time for immersing the disk in the aqueous sodium hydroxide solution was changed to 30 minutes, whereby the etching amount of the disk was changed to about 20 μm, but the comparison was performed by the same method as in Comparative Example 2. The disk of Example 3 was obtained.

[Example 1]
In Comparative Example 2, before etching the surface of the disk, an oxide film having a thickness of 1 μm was formed on the surface of the disk having a roughened surface using 15% by mass of sulfuric acid. Further, in Comparative Example 2, the time for immersing the disk in the aqueous sodium hydroxide solution was changed to 3 minutes, whereby the etching amount of the disk was changed to about 1.5 μm, which was the same as in Comparative Example 2. By the method, the disk of Example 1 was obtained.

[Example 2]
In Example 1, an oxide film having a thickness of 20 μm was formed, and the time for immersing the disk in the sodium hydroxide aqueous solution was changed to 32 minutes, whereby the etching amount of the disk was reduced to about 22 μm. The disk of Example 2 was obtained by the same method as in Example 1 except that it was changed.

[Evaluation methods]
[Arithmetic Mean Roughness Ra]
For the surface of each disk, the arithmetic mean roughness Ra was measured by a method according to JIS B 0601: 2013. The measurement results are as shown in Table 1 below.

[Maximum cross-sectional height Rt of roughness curve]
For the surface of each disk, the maximum cross-sectional height Rt of the roughness surface was measured by a method according to JIS B 0601: 2013. The measurement results are as shown in Table 1 below.

[Amount of deposits]
After the measurement of the arithmetic mean roughness Ra and the measurement of the maximum cross-sectional height Rt of the roughness curve were completed, a titanium nitride film having a thickness of 500 μm was formed on the surface of each disk. Then, when a tape having a rectangular shape having a horizontal length of 1 cm and a vertical length of 2 cm is attached to the surface of the titanium nitride film and the tape is peeled off from the titanium nitride film, the tape becomes The amount of titanium nitride particles adhering to the adhesive surface was visually observed. The amount of titanium nitride particles was evaluated according to the following levels. The evaluation results are as shown in Table 1 below.

◎ Titanium nitride particles cannot be visually confirmed ○ Titanium nitride particles are hardly attached △ Titanium nitride particles are attached in a small amount × Titanium nitride particles are attached in a large amount

As shown in Table 1, the arithmetic mean roughness Ra on the surface of the disk is 3.35 μm in Comparative Example 1, 3.10 μm in Comparative Example 2, and 2.42 μm in Comparative Example 3. Admitted. The arithmetic mean roughness Ra on the surface of the disk was found to be 3.42 μm in Example 1 and 3.37 μm in Example 2.

According to Comparative Examples 1 to 3 and Examples 1 and 2, it was found that the arithmetic mean roughness Ra was the highest in the member of Comparative Example 1 which had not been etched. Further, according to Comparative Example 1 and Examples 1 and 2, by etching the surface after forming the oxide film, the arithmetic average roughness Ra higher than the arithmetic average roughness Ra in the roughened member can be obtained. It was recognized that it was possible to obtain the members that it had.

Further, according to Comparative Examples 1 and 2 and Example 1, it was confirmed that by etching the surface of the member after forming the oxide film, it was possible to suppress the arithmetic average roughness Ra from being reduced by the etching. It was. Further, also in Comparative Examples 1 and 3 and Example 2, it was confirmed that by etching the surface of the member after forming the oxide film, the arithmetic mean roughness Ra could be suppressed from being reduced by the etching. ..

It was found that the maximum cross-sectional height Rt of the roughness curve on the surface of the disk was 20.9 μm in Comparative Example 1, 19.4 μm in Comparative Example 2, and 15.8 μm in Comparative Example 3. .. It was found that the maximum cross-sectional height Rt of the roughness curve on the surface of the disk was 19.6 μm in Example 1 and 19.6 μm in Example 2.

According to Comparative Examples 1 to 3 and Examples 1 and 2, the maximum cross-sectional height Rt of the roughness curve is also etched by forming an oxide film as in the case of the arithmetic mean roughness Ra. It was found that the maximum cross-sectional height Rt of the roughness curve could be suppressed from being reduced by etching the surface of the member.

According to the measurement results of the arithmetic mean roughness Ra and the maximum cross-sectional height Rt of the roughness curve, the surface shape obtained after etching by etching the surface of the member after forming the oxide film can be obtained. It can be said that the shape follows the shape when it is roughened by the blasting process.

It was confirmed that the amount of the deposit was "x" in Comparative Example 1, "Δ" in Comparative Example 2, and "○" in Comparative Example 3. It was confirmed that the amount of the deposit was "◯" in Example 1 and "⊚" in Example 2. In this way, when the amount of etching on the surface of the member is about the same, when the surface of the member is etched after the oxide film is formed, compared with the case where the surface of the member is etched without forming the oxide film. Therefore, it was found that the film formed on the surface was difficult to be detached. It is considered that the desorption of the film is suppressed by forming the oxide film for the following two reasons.

A) The media that has been driven into the member by blasting and the dirt caused by the media are removed from the member together with the oxide film, so that the degree of cleanliness on the surface is increased.

B) This is because it is possible to prevent the surface roughness on the surface of the member from becoming smaller than the surface roughness on the surface roughened by blasting after etching.

As described above, according to one embodiment of the surface treatment method, the effects described below can be obtained.
(1) The surface 10F is roughened by the blast treatment, and the oxide film 10OF formed on the roughened surface 10F is etched to increase the surface roughness on the surface 10F and clean the surface 10F. It is possible to etch. As a result, the film deposited on the surface 10F is less likely to be separated from the surface.

(2) When the surface 10F contains aluminum, even if the oxide film 10OF is etched, the surface roughness on the surface 10F is unlikely to be smaller than the surface roughness on the surface 10F after being roughened by the blast treatment. As a result, a surface 10F having a high surface roughness due to the blast treatment can be obtained. As a result, the film film deposited on the surface 10F is more suppressed from being detached.

(3) When the oxide film 10OF having a thickness of 1 μm or more and 20 μm or less is formed, the media M driven into the surface 10F by the blast treatment and the stains caused by the media M are present in the oxide film 10OF. Increased certainty of inclusion. This increases the certainty that both the media M and the dirt are removed from the surface 10F by etching the oxide film 10OF.

(4) Since the oxide film 10OF formed on the surface 10F is surely removed, as the oxide film 10OF grows, the media M incorporated into the oxide film 10OF and the stains caused by the media M also appear on the surface 10F. Is surely removed from. As a result, the surface 10F is cleaned, and as a result, the detachment of the film film deposited on the surface 10F is further suppressed.

(5) A surface 10F having an arithmetic mean roughness Ra higher than that after the blast treatment is obtained, whereby the stress in the film formed on the surface 10F is further relaxed. As a result, the film deposited on the surface 10F is more suppressed from being separated from the surface 10F.

The above-described embodiment can be modified and implemented as follows.
[surface]
The surface 10F may be formed of a metal other than aluminum or an aluminum alloy. Even in this case, the effect according to (1) described above can be obtained by roughening the surface 10F, forming an oxide film 10OF on the roughened surface 10F, and etching the oxide film 10OF. Is possible.

The arithmetic average roughness Ra on the surface 10F after etching may be smaller than the arithmetic average roughness Ra on the surface 10F after the blast treatment. Even in this case, the effect according to (1) described above can be obtained by roughening the surface 10F, forming an oxide film 10OF on the roughened surface 10F, and etching the oxide film 10OF. Is possible.

The etching amount of the member 10 may be less than or equal to the thickness of the oxide film 10OF. Even in this case, the media M contained in the oxide film 10OF while suppressing the surface roughness on the surface 10F from being reduced by etching at least a part of the oxide film 10OF formed on the member 10. In addition, it is possible to remove not a little dirt caused by the media M. Therefore, it is possible to obtain the effect according to (1) described above.

The thickness of the oxide film 10OF may be less than 1 μm or more than 20 μm. Even in this case, by forming the oxide film 10OF before etching the member 10, the media M and the media M contained in the oxide film 10OF are suppressed while suppressing the surface roughness on the surface 10F from becoming small. It is possible to remove the stains caused by the etching. Therefore, it is possible to obtain the effect according to (1) described above.

[Blasting]
-For the blasting treatment on the surface 10F, a wet blasting treatment may be used instead of the dry blasting treatment.

[etching]
-Instead of immersing the member 10 in the etching solution ET, the surface 10F may be etched by spraying the etching solution ET on the surface 10F of the member 10.

[Washing]
-Instead of immersing the member 10 in the cleaning liquid C, the surface 10F may be cleaned by spraying the cleaning liquid C on the surface 10F of the member 10.

10 ... Member, 10F ... Surface, 10OF ... Oxide film, AD ... Anode, ADa ... Jig, C ... Cleaning liquid, CD ... Cathode, EL ... Electrolyte liquid, ET ... Etching liquid, M ... Media, N ... Nozzle, P ... Power supply, T1 ... 1st treatment tank, T2 ... 2nd treatment tank, T3 ... 3rd treatment tank.

Claims (3)

Roughening the surface by blasting a member that has a metal surface and is applied to a vacuum processing apparatus.
To form a porous oxide film by anodizing on the roughened surface,
Viewed contains a etching, the at least the oxide film by etchant,
Roughening the surface involves using a circulating blasting device that circulates the media within the blasting device.
Etching at least the oxide film includes etching so that the etching amount is thicker than the thickness of the oxide film in the thickness direction of the oxide film.
Arithmetic mean higher than the arithmetic mean roughness Ra specified in JIS B 0601: 2013 on the surface roughened by the blast treatment by forming the oxide film and at least etching the oxide film. A surface treatment method for forming the surface having roughness Ra . Wherein forming the oxide film, looking contains to form the oxide film having a thickness of 20μm or more 1 [mu] m,
The surface treatment method according to claim 1, wherein at least etching the oxide film includes etching a thickness of 110% or more and 150% or less with respect to the thickness of the oxide film in the thickness direction of the oxide film. .. The surface treatment method according to claim 1 or 2 , wherein the surface is formed of either aluminum or an aluminum alloy.